CN205984989U - Gallium nitride emitting diode structure with amplifier - Google Patents
Gallium nitride emitting diode structure with amplifier Download PDFInfo
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- CN205984989U CN205984989U CN201620528439.6U CN201620528439U CN205984989U CN 205984989 U CN205984989 U CN 205984989U CN 201620528439 U CN201620528439 U CN 201620528439U CN 205984989 U CN205984989 U CN 205984989U
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- gallium nitride
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- emitting diode
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- diode structure
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Abstract
The utility model provides a gallium nitride emitting diode structure with amplifier. Emitting diode includes: substrate, non - doping gaN buffer layer, N type gaN conducting layer, multi -quantum well active area, P type gallium nitride conducting layer, electric current extension layer, P electrode, high resistant gallium nitride channel layer, alGaN barrier layer, source electrode, gate electrode, the utility model relates to an integrated amplifier circuit's nitride -based LED structure, parasitic capacitance, the inductance of having avoided discrete device circuit connection to exist, the electrode design that will control the LED break -make can effectively improve the holistic response frequency of luminescent device at chip, improves the visible light communication speed based on nitride -based LED.
Description
Technical field
This utility model is related to LED technology field and in particular to a kind of gallium nitride light-emitting two with amplifier
Pole pipe structure.
Background technology
Light emitting diode（Referred to as " LED "）It is a kind of semiconducting solid luminescent device, it utilizes within semi-conducting material
There is radiation recombination in conduction band electron and valence band hole, be directly to light so that form of photons releases energy.Different by design
Semi-conducting material energy gap, light emitting diode can launch the light from infrared to ultraviolet different-waveband.
Gallium nitride based light emitting diode with its have the advantages that efficiently, energy-conservation, the long-life and switching speed fast in the world
In the range of obtain broad development.Gallium nitride based light emitting diode sends blue light, and excitated fluorescent powder obtains gold-tinted, with original blue light
It is mixed to get white light.Switched by quick, it is possible to achieve communication function, therefore have illumination concurrently based on the white light LEDs of gallium nitride
Dual-use function with communication.The white light LEDs constant-current drive circuit that illumination communication at present shares is integrated in one with signal amplification circuit
Rise, interact, limit the traffic rate of white light LEDs.
Utility model content
This utility model is directed to gallium nitride based LED constant-current drive circuit and the signal amplification circuit phase that existing illumination communication shares
Mutually affect, the low problem of traffic rate, propose a kind of gallium nitride based LED structure of integrated amplifier.
The purpose of this utility model is realized at least through one of following technical scheme.
A kind of gallium nitride light-emitting diode structure with amplifier, its under at least include successively substrate, gallium nitride delay
Rush the part of layer, N-type GaN conductive layer, multi-quantum well active region, p-type gallium nitride conductive layer, current extending, P electrode；Nitrogen
Change gallium cushion（Insulating barrier）Another part be up sequentially provided with high resistant gallium nitride channel layer, AlGaN potential barrier；AlGaN gesture
Barrier layer is provided with source Ohmic electrode and gate electrode；Described diode structure comprises transistor current amplification circuit；Current amplifier electricity
It route described nitride buffer layer, AlGaN potential barrier, source Ohmic electrode and gate electrode composition；
In a kind of described gallium nitride light-emitting diode structure with amplifier, described current amplification circuit is GaN/
AlGaN hetero-junctions HEMT forms.The N electrode that current amplification circuit is located in conventional LED structure
Region；The two-dimensional electron gas of GaN/AlGaN hetero-junctions are connected with the N-type conductive layer of light emitting diode.
Further optimally, described GaN cushion is GaN nucleating layer and unintentional doped gan layer, wherein GaN nucleating layer
Thickness is 10-100 nm, and unintentional doped gan layer thickness is 100-4000 nm；
Further optimally, the doping concentration 2 × 10 of described N-type GaN conductive layer18cm-3-2×1019cm-3.
Further optimally, described multi-quantum well active region is periodically overlapping InGaN barrier layer and GaN potential well layer；
Further optimally, in described p-type gallium nitride conductive layer magnesium doping content 2 × 1018cm-3-2×1020cm-3.
What preparation was described has a kind of method of the gallium nitride light-emitting diode structure with amplifier, walks including following
Suddenly：
(1) according to a conventional method in metal organic chemical vapor deposition（MOCVD）Growing gallium nitride LED extension in reative cell
Piece, under at least include substrate, undoped GaN cushion, N-type GaN conductive layer, multi-quantum well active region, p-type gallium nitride successively
Conductive layer, silicon oxide mask layer；
(2) final to (1) gained sample is taken out, deposit silicon dioxide；
(3) final to (2) gained sample is passed through photoetching technique, remove part of silica, retain the dioxy of masks area
SiClx；
(4) (3) gained sample is put in inductively coupled plasma etching equipment to the position removing part of silica
Carry out GaN etching, be etched to undoped GaN cushion；
(5) (4) gained sample is put into metal organic chemical vapor deposition（MOCVD）Reaction is indoor,（4）Etching portion
Position grows the gallium nitride layer of unintentional doping；
(6) exist（5）AlGaN potential barrier is grown on the gallium nitride layer of unintentional doping of gained sample；
(7) (6) gained sample is taken out reative cell, depositing Ti Au, light is engraved in preparation source electrode ohm in AlGaN potential barrier
Contact, and it is etched away silicon oxide mask layer；
(8) exist（7）Preparation p-type current extending and P electrode Ohmic contact on the p-type gallium nitride conductive layer of gained sample；
(9) exist（8）Grid Schottky contacts are prepared on the AlGaN potential barrier on gained sample.
Compared with prior art, this utility model has the advantage that and technique effect：
This utility model is directed to existing gallium nitride based LED operating current greatly, the low problem of separation control circuit response frequency,
A kind of gallium nitride based LED construction of integrated amplifier proposed, it is to avoid discrete device circuit connects the parasitic capacitance existing, electricity
Sense, will control the electrode design of LED break-make in chip internal, can shorten the photoelectric respone time of luminescent device, improve luminous
The overall response frequency of device, improves the visible light communication speed based on gallium nitride based LED.
Brief description
Fig. 1 is conventional gallium nitride based LED construction generalized section.
Fig. 2 is gallium nitride based LED construction generalized section of the present utility model.
Fig. 3 is gallium nitride based LED preparation flow figure of the present utility model.
Fig. 4 is the time resolution luminosity curve of this utility model and conventional separators part.
In figure：1st, substrate；2nd, undoped GaN cushion；3rd, N-type GaN conductive layer；4th, multi-quantum well active region；5th, p-type nitrogen
Change gallium conductive layer；6th, current extending；7th, P electrode；8th, high resistant gallium nitride channel layer；9th, AlGaN potential barrier；10th, source electrode；
11st, gate electrode；12nd, N electrode；13rd, silicon oxide mask layer.
Specific embodiment
With reference to the accompanying drawings and examples this utility model is described further, but enforcement of the present utility model and protection
Not limited to this.
A kind of gallium nitride light-emitting diode structure with amplifier, as shown in Fig. 2 described light emitting diode is from bottom to top
It is followed successively by 1, substrate；2nd, undoped GaN cushion；3rd, N-type GaN conductive layer；4th, multi-quantum well active region；5th, p-type gallium nitride is led
Electric layer；6th, current extending；7th, P electrode；8th, high resistant gallium nitride layer；9th, AlGaN potential barrier；10th, source electrode；11st, gate electrode；
12nd, N electrode；13rd, silicon oxide mask layer.
As a kind of example, a kind of preparation process of the gallium nitride light-emitting diode structure with amplifier is as follows：
(1). Sapphire Substrate is put in Metallo-Organic Chemical Vapor chemical deposition equipment, conventionally grows nitrogen
Change gallio LED；
(2). will（1）Described sample takes out reative cell, deposits silicon dioxide, and thickness is 100nm, as (a) institute in Fig. 3
Show；
(3). will（2）Described sample adopts photoetching technique, removes part of silica, retains the dioxy of masks area
In SiClx, such as Fig. 3 shown in (b)；
(4). will（3）Described sample is put in inductively coupled plasma etching equipment, carries out gallium nitride etching, such as Fig. 3
In shown in (c)；
(5). will（4）Put in metal organic chemical vapor deposition equipment after described sample clean, growing high resistant successively
Gallium nitride layer（The gallium nitride of unintentional doping）, AlGaN potential barrier, in such as Fig. 3 shown in (d)；
(6). will（5）Described sample takes out from equipment, after cleaning, depositing Ti Au multilamellar, and after photoetching, preparation source electricity
Pole, degenerates 30 seconds for 800 degrees Celsius afterwards, and preparation source Ohmic contact, in such as Fig. 3 shown in (e)；
(7). will（6）After described sample clean, depositing indium tin oxide, thickness 150nm, as p-type current extending；
(8). will（7）After described sample clean, deposit CrAu, thickness is 100nm and 100nm respectively, as P ohm
In contact, such as Fig. 3 shown in (f)；
(9). will（8）After described sample clean, deposit NiAu, thickness is 20nm and 300 nm respectively, as grid electricity
Pole, as shown in Figure 2.
As example, such as Fig. 4, is the time resolution luminosity curve of this utility model and conventional separators part.In the diagram,
Dotted line is result of the present utility model, and solid line is the result of conventional separators part, and vertical coordinate is relative light intensity, when abscissa is
Between, unit is nanosecond.The gallium nitride based LED construction of integrated amplifier, it is to avoid discrete device circuit connects the parasitism existing
Electric capacity, inductance, will control the electrode design of LED break-make in chip internal, can shorten the photoelectric respone time of luminescent device, change
The overall response frequency of kind luminescent device, improves the visible light communication speed based on gallium nitride based LED.
Diode structure produced above comprises HEMT current amplification circuit.Described high electron mobility
Rate transistor current amplification circuit includes undoped gallium nitride insulating barrier, aluminum gallium nitride barrier layer, source Ohmic electrode and gate electrode group
Become.
Optimal enforcement ground further, described GaN cushion is GaN nucleating layer and unintentional doped gan layer, and wherein GaN becomes
Stratum nucleare thickness is 10-100 nm, and unintentional doped gan layer thickness is 100-4000 nm；The silicon doping of described N-type GaN conductive layer
Concentration 2 × 1018cm-3-2×1019cm-3；Described multi-quantum well active region is periodic InGaN barrier layer and GaN potential well layer；P
The doping content 2 × 10 of magnesium in type conductive layer18cm-3-2×1020cm-3.
Claims (6)
1. a kind of gallium nitride light-emitting diode structure with amplifier it is characterised in that under at least include substrate, nitrogen successively
A part for change gallium cushion, N-type GaN conductive layer, multi-quantum well active region, p-type gallium nitride conductive layer, current extending, P electricity
Pole；Another part of nitride buffer layer is up sequentially provided with high resistant gallium nitride channel layer, AlGaN potential barrier；AlGaN potential barrier
It is provided with source Ohmic electrode and gate electrode；Described diode structure comprises transistor current amplification circuit；Current amplification circuit by
Described nitride buffer layer, AlGaN potential barrier, source Ohmic electrode and gate electrode composition.
2. a kind of gallium nitride light-emitting diode structure with amplifier according to claim 1 is it is characterised in that electric current
Amplifying circuit is that GaN/AlGaN hetero-junctions HEMT forms.
3. a kind of gallium nitride light-emitting diode structure with amplifier according to claim 1 is it is characterised in that described
The N electrode region that current amplification circuit is located in conventional LED structure.
4. a kind of gallium nitride light-emitting diode structure with amplifier according to claim 2 is it is characterised in that GaN/
The two-dimensional electron gas of AlGaN hetero-junctions are connected with the N-type conductive layer of light emitting diode.
5. a kind of gallium nitride light-emitting diode structure with amplifier according to claim 1 is it is characterised in that described
GaN cushion is GaN nucleating layer and unintentional doped gan layer, and wherein GaN nucleating layer thickness is 10-100 nm, unintentional doping
GaN layer thickness is 100-4000 nm.
6. a kind of gallium nitride light-emitting diode structure with amplifier according to claim 1 is it is characterised in that described
Multi-quantum well active region is periodically overlapping InGaN barrier layer and GaN potential well layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620528439.6U CN205984989U (en) | 2016-06-03 | 2016-06-03 | Gallium nitride emitting diode structure with amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620528439.6U CN205984989U (en) | 2016-06-03 | 2016-06-03 | Gallium nitride emitting diode structure with amplifier |
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| CN205984989U true CN205984989U (en) | 2017-02-22 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914218A (en) * | 2016-06-03 | 2016-08-31 | 华南理工大学 | GaN-based light emitting diode structure of integrated amplification circuit and preparation method thereof |
| CN107188112A (en) * | 2017-04-14 | 2017-09-22 | 南京邮电大学 | A kind of variable light distribution device based on silica-based nitride and preparation method thereof |
-
2016
- 2016-06-03 CN CN201620528439.6U patent/CN205984989U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914218A (en) * | 2016-06-03 | 2016-08-31 | 华南理工大学 | GaN-based light emitting diode structure of integrated amplification circuit and preparation method thereof |
| CN105914218B (en) * | 2016-06-03 | 2019-01-29 | 华南理工大学 | Gallium nitride based light emitting diode structure of integrated amplifier and preparation method thereof |
| CN107188112A (en) * | 2017-04-14 | 2017-09-22 | 南京邮电大学 | A kind of variable light distribution device based on silica-based nitride and preparation method thereof |
| CN107188112B (en) * | 2017-04-14 | 2019-10-01 | 南京邮电大学 | A kind of variable light distribution device and preparation method thereof based on silica-based nitride |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170222 Termination date: 20200603 |
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| CF01 | Termination of patent right due to non-payment of annual fee |