CN109950324A - III group-III nitride diode component of p-type anode and preparation method thereof - Google Patents
III group-III nitride diode component of p-type anode and preparation method thereof Download PDFInfo
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Abstract
The invention discloses the III group-III nitride diode components and production method of a kind of p-type anode.The device includes: the first hetero-junctions, including the first semiconductor and the second semiconductor being formed on the first semiconductor, and is formed with two-dimensional electron gas in first heterojunction structure；Second hetero-junctions, including second semiconductor and the third semiconductor for being formed in regional area on second semiconductor surface, the third semiconductor is p-type doping, and doping concentration can exhaust the two-dimensional electron gas in first hetero-junctions；The anode and cathode connecting with first hetero-junctions, the anode and cathode are electrically connected with the two-dimensional electron gas, and the anode forms Ohmic contact or Schottky contacts with third semiconductor simultaneously.Device architecture of the invention is simple, has many advantages, such as low turn-on voltage, high voltage and high-frequency, while manufacture craft is simple, and repeatability is high, low in cost, is easy to be mass produced.
Description
Technical field
The present invention relates to a kind of diode components, and in particular to a kind of III group-III nitride diode component of p-type anode and
Its production method belongs to power semiconductor technologies field.
Background technique
III group-III nitride (such as GaN) has many advantages, such as big forbidden bandwidth, high electron mobility, high breakdown field strength, Neng Gouman
Generation power electronic system is more high-power to power device for foot, the work of higher frequency, smaller volume and higher temperature is wanted
It asks.High electron mobility transistor (High Electron Mobility based on AlGaN/GaN hetero-junctions
Transistor --- HEMT) be successfully applied to frequency microwave field, power electronic devices field research also
It makes some progress.Diode component is played an important role in semiconductor power field of electronic devices.It is traditional at present
Many problems are also faced with using III group-III nitride diode of Schottky metal contact, as cut-in voltage is big, breakdown potential is forced down and
Reverse leakage is big etc..
The AlGaN/GaN diode component that Jae-Gil Lee etc. is prepared by the way of etching AlGaN potential barrier is opened
Voltage 0.37V, much smaller than the diode cut-in voltage of Conventional Schottky structure, but reverse leakage current is larger
(IEEEElectron Device Letters,vol.34,no.2,Feb2013)。
Silvia Lenci etc. uses knot terminal technology, the schottky diode device of preparation, and reverse current is had
The reduction of effect, but forward conduction current density still very it is low (IEEEElectron Device Letters, vol.34,
no.8,Aug2013)。
All fine jades etc. propose it is a kind of using Ohmic contact as anode and cathode, using the two dimension of AlGaN/GaN hetero-junctions
Electron gas will be close to anode A lGaN barrier layer etching certain depth, prepare MIM element and connect as conducting channel
Touching, the metal are connected with anode, to realize that forward voltage is opened and backward voltage turn-off function (CN 103872145A).It should
Lower threshold voltage and conducting current density may be implemented in device.But since etching AlGaN potential barrier technical difficulty is larger,
Etching injury is higher, and there are certain difficulty for the preparation of the device and technology stability.
Thus, industry urgently develop it is a kind of easy to implement, it is reproducible, and the GaN bis- of device performance can be effectively ensured
Pole pipe device.
Summary of the invention
The main purpose of the present invention is to provide the III group-III nitride diode component and preparation method of a kind of p-type anode, with gram
Take the deficiencies in the prior art.
For realization aforementioned invention purpose, the technical solution adopted by the present invention includes:
The embodiment of the invention provides a kind of III group-III nitride diode components of p-type anode, comprising:
First hetero-junctions, including the first semiconductor and the second semiconductor for being formed on the first semiconductor, described the second half
Conductor has the band gap for being wider than the first semiconductor, and is formed with two-dimensional electron gas in first heterojunction structure；
Second hetero-junctions, including second semiconductor and the third for being formed in the second semiconductor surface regional area
Semiconductor, the third semiconductor can exhaust the two-dimensional electron gas in first hetero-junctions；And
Anode and cathode, wherein the anode includes the first anode and second plate being electrically connected to each other, first sun
Pole and cathode are electrically connected with the two-dimensional electron gas in first hetero-junctions, and the second plate and third semiconductor form ohm
Contact or Schottky contacts.
In some embodiments, first semiconductor, the second semiconductor material can be selected from III group-III nitride.
Further, the material of the third semiconductor is p-type semiconductor.
Further, the first anode and cathode and the second semiconductor form Ohmic contact.
Further, it for the diode component, is opened when the voltage applied on the second plate is greater than one
When voltage, the diode component is in the open state, and the cut-in voltage is enough to make the two-dimensional electron gas in the first hetero-junctions
Again induct and be electrically connected the first anode with cathode；And when the voltage applied on the second plate is less than the unlatching electricity
When pressure, the diode component is in close state.
The embodiment of the invention also provides a kind of method of III group-III nitride diode component for making the p-type anode,
Include:
The first semiconductor, the second semiconductor and third semiconductor are set gradually on substrate,
Anode and cathode is made, the anode includes the first anode and second plate being electrically connected to each other, and makes the first sun
Pole and cathode are electrically connected with the two-dimensional electron gas in first hetero-junctions, and second plate and third semiconductor is made to form ohm
Contact or Schottky contacts；And
Remove the third semiconductor being distributed between anode and cathode.
The embodiment of the invention also provides a kind of method of III group-III nitride diode component for making the p-type anode,
Include:
The first semiconductor, the second semiconductor are set gradually on substrate；
Formation third semiconductor on second semiconductor is grown in using selective area epitaxial mode；
Anode and cathode is made, the anode includes the first anode and second plate being electrically connected to each other, and makes the first sun
Pole and cathode are electrically connected with the two-dimensional electron gas in first hetero-junctions, and second plate and third semiconductor is made to form ohm
Contact or Schottky contacts simultaneously cover third semiconductor completely.
In aforementioned production method of the invention, it can at least be injected by epitaxial p-type impurity doping techniques or n-type impurity
The p-type of technology realization third semiconductor.
In aforementioned production method of the invention, at least can using Metallo-Organic Chemical Vapor deposition, molecular beam epitaxy,
Any mode in atomic layer deposition, physical vapour deposition (PVD) and magnetron sputtering grows to form the first semiconductor, the second semiconductor
With third semiconductor.
Compared with prior art, III group-III nitride diode device structure of p-type anode provided by the invention is simple, has
The advantages that low turn-on voltage, high voltage and high-frequency, while manufacture craft is simple, repeatability is high, and it is low in cost, it is easy to extensive
Production.
Detailed description of the invention
Fig. 1 is a kind of partial structurtes signal of III group-III nitride diode of p-type anode in an exemplary embodiments of the invention
Figure；
Fig. 2 is a kind of fabrication processing of III group-III nitride diode of p-type anode in a specific embodiment of the invention
Figure；
Fig. 3 is the manufacture craft stream of III group-III nitride diode of another p-type anode in a specific embodiment of the invention
Cheng Tu；
Description of symbols: substrate 1, the first semiconductor 2, the second semiconductor 3, the second semiconductor 4, anode 5, cathode 6, sun
Pole 7, two-dimensional electron gas 8, grid 9.
Specific embodiment
In view of deficiency in the prior art, inventor is studied for a long period of time and is largely practiced, and is able to propose of the invention
Technical solution.Explanation will be further explained to the technical solution, its implementation process and principle etc. as follows.But it should manage
Solution, within the scope of the present invention, above-mentioned each technical characteristic of the invention and specifically described in below (e.g. embodiment) each technology
It can be combined with each other between feature, to form a new or preferred technical solution.As space is limited, no longer tire out one by one herein
It states.
A kind of III group-III nitride diode component of p-type anode that the one aspect of the embodiment of the present invention provides includes:
First hetero-junctions, including the first semiconductor and the second semiconductor for being formed on the first semiconductor, described the second half
Conductor has the band gap for being wider than the first semiconductor, and is formed with two-dimensional electron gas in first heterojunction structure；
Second hetero-junctions, including second semiconductor and the third for being formed in the second semiconductor surface regional area
Semiconductor, the third semiconductor can exhaust the two-dimensional electron gas in first hetero-junctions；And
Anode and cathode, wherein the anode includes the first anode and second plate being electrically connected to each other, first sun
Pole and cathode are electrically connected with the two-dimensional electron gas in first hetero-junctions, and the second plate and third semiconductor form ohm
Contact or Schottky contacts.
Further, the first anode and cathode and the second semiconductor form Ohmic contact.
In some embodiments, the first anode can be wholely set with second plate.
In some embodiments, third semiconductor is covered completely by second plate.
It further says, the third semiconductor can will be located at third semiconductor lower zone in first hetero-junctions
The two-dimensional electron gas in domain exhausts, and disconnects the two-dimensional electron gas conducting channel in first hetero-junctions, and it is logical can not to form electric current
Road.
Further, the material of first semiconductor and the second semiconductor is selected from III group-III nitride.
For example, the material of first semiconductor preferably includes GaN, but not limited to this.
For example, the material of second semiconductor preferably includes AlxGa(1-x)N or InAlN, 0 x≤1 <, but not limited to this.
The third semiconductor is p-type semiconductor, and material includes the wide bandgap semiconductor of p-type.
For example, the wide bandgap semiconductor of the p-type includes III group-III nitride of p-type；Preferably, III race's nitrogen of the p-type
Compound includes p-GaN or p-InGaN, but not limited to this.
For example, the wide bandgap semiconductor of the p-type includes p-NiO, but not limited to this.
In some embodiments, the third semiconductor can be realized by way of secondary selective area epitaxial, Huo Zhetong
The mode etched after an extension is crossed to realize.
In some embodiments, the p-type of the third semiconductor can pass through epitaxial p-type impurity doping techniques or p-type
Impurity injection technique realizes, preferred element is Mg, Zn etc., but not limited to this.
Further, for the diode component of the embodiment of the present invention, when the electricity applied on the second plate
When pressure is greater than a cut-in voltage, the diode component is in the open state, and the cut-in voltage is enough to make in the first hetero-junctions
Two-dimensional electron gas induct again and be electrically connected the first anode with cathode；And when the voltage applied on the second plate is small
When the cut-in voltage, the diode component is in close state.
In some embodiments, the third semiconductor of p-type exhausts the two-dimensional electron gas in corresponding first hetero-junctions, when
When adding certain forward voltage on second plate, two-dimensional electron gas is inducted, and forward voltage at this time is cut-in voltage；If cathode connects
Ground, when the no applied voltage on second plate or the voltage of application are lower than cut-in voltage, the diode component, which is in, is closed
State；When the voltage applied in second plate is greater than no-voltage and is higher than the cut-in voltage, the diode component is in
On state.
It further says, when adding zero-bias on second plate or not being biased, is located at third semiconductor
Accumulation without two-dimensional electron gas in the region of first hetero-junctions of underface；And works as institute's making alive on second plate and be greater than unlatching
When voltage, two-dimensional electron gas is formed in the channel of the first hetero-junctions immediately below third semiconductor.
III group-III nitride diode component of p-type anode provided by the invention has low turn-on voltage, high voltage and high frequency
The advantages that rate.
A kind of III group-III nitride diode device for making the p-type anode that the other side of the embodiment of the present invention provides
The method of part includes:
The first semiconductor, the second semiconductor and third semiconductor are set gradually on substrate,
Anode and cathode is made, the anode includes the first anode and second plate being electrically connected to each other, and makes the first sun
Pole and cathode are electrically connected with the two-dimensional electron gas in first hetero-junctions, and second plate and third semiconductor is made to form ohm
Contact or Schottky contacts, and
Remove the third semiconductor being distributed between anode and cathode；
Alternatively,
The first semiconductor, the second semiconductor are set gradually on substrate,
Formation third semiconductor on second semiconductor is grown in using selective area epitaxial mode,
Anode and cathode is made, the anode includes the first anode and second plate being electrically connected to each other, and makes the first sun
Pole and cathode are electrically connected with the two-dimensional electron gas in first hetero-junctions, and second plate and third semiconductor is made to form ohm
Contact or Schottky contacts simultaneously cover third semiconductor completely.
In aforementioned production method of the invention, it can at least be injected by epitaxial p-type impurity doping techniques or n-type impurity
The p-type of technology realization third semiconductor.
In aforementioned production method of the invention, at least can using Metallo-Organic Chemical Vapor deposition, molecular beam epitaxy,
Any mode in atomic layer deposition, physical vapour deposition (PVD) and magnetron sputtering grows to form the first semiconductor, the second semiconductor
With third semiconductor.
Further, the substrate includes gallium nitride, silicon carbide, silicon or Sapphire Substrate, but not limited to this.
In some embodiments, the production method may include:
Successively growth regulation semiconductor, the second semiconductor and third semiconductor on substrate, the p-type of the third semiconductor
It can be realized by modes such as extension, injection activation；
Anode and cathode is made, connect anode, cathode with the first hetero-junctions, and make in anode and cathode and the first hetero-junctions
Two-dimensional electron gas electrical connection, the anode connect with third semiconductor and formed Ohmic contact or Schottky contacts.
In some embodiments, the production method may include: will be between anode and cathode using etching technics
Third semiconductor (such as p-GaN) etches away, and the two-dimensional electron gas in the first semiconductor layer (such as GaN) of corresponding region is felt again
It is raw, complete the production of device.
In some embodiments, the production method may include: successively growth regulation semiconductor and on substrate
Two semiconductors, the selective area epitaxial growth third semiconductor on the second semiconductor；Later, anode and cathode is made, anode and yin are made
Pole is electrically connected with two-dimensional electron gas in the first hetero-junctions, and anode and third semiconductor form Ohmic contact or Schottky contacts.
III group-III nitride diode component manufacture craft of p-type anode provided by the invention is simple, and repeatability is high, at low cost
It is honest and clean, it is easy to be mass produced.
Explanation is further explained to technical solution of the present invention with reference to the accompanying drawings and embodiments.
Please referring to is the diode structure realized in a typical embodiments of the invention using p-type anode technology shown in Fig. 1
Schematic diagram (by taking AlGaN/GaN device as an example).Such device can by AlGaN/GaN hetero-junctions (comprising as the first half
The GaN layer of conductor 2 and AlGaN layer as the second semiconductor 3) on grown in a manner of selective area epitaxial as third semiconductor
P-GaN layer 4, or on p-GaN/AlGaN/GaN double heterojunction, realized by way of etching.P-GaN can use extension
Doping way is realized or the mode of implanted with p-type impurity activation is realized.
It should be noted that p-GaN may be the material of other p-types, the p-NiO grown such as ALD (atomic layer deposition)
Deng.
Referring to Fig. 2, a kind of typical production side of III group-III nitride diode of the p-type anode that the present embodiment is related to
Method includes:
(1) AlGaN/GaN epitaxial layer and p-GaN are epitaxially grown on the substrate, wherein GaN with a thickness of 1 μm -8 μm,
AlGaN with a thickness of 14nm-30nm, wherein the molar content of Al element is 15%-30%, p-GaN with a thickness of 50-110nm,
Mg doping concentration is 1019Magnitude；
(2) mesa-isolated is carried out, ion implanting or plasma can be used as exposure mask using photoresist or deielectric-coating
Body etching；
(3) anode and cathode region is performed etching as exposure mask using photoresist, carves p-type doping layer, is put into later
Electron beam deposition platform deposit ohmic contact metal Ti/Al/Ni/Au (20nm/130/nm/50nm/150nm) simultaneously remove clear
It washes, 890 DEG C of 30s is carried out to sample later and anneal to form Ohmic contact, respectively anode and cathode；
(4) it is removed also with electron beam deposition Ni/Au (50/150nm), as exposure mask in nitrogen using photoresist
The lower 400 DEG C of 10min annealing of gas atmosphere forms Ohmic contact with p-type third semiconductor, completes the production of anode.
(5) p-GaN between anode and cathode is etched away using etching technics, the two-dimensional electron gas in the GaN of corresponding region
Again induct, complete the production of device.
Referring to Fig. 3, another production method of III group-III nitride diode of the p-type anode that the present embodiment is related to
Include:
(1) be epitaxially grown on the substrate AlGaN/GaN epitaxial layer, wherein GaN with a thickness of 1 μm -8 μm, the thickness of AlGaN
For 14nm-30nm, wherein the molar content of Al element is 15%-30%；Using secondary selective area epitaxial outside the surface AlGaN/GaN
Prolong p-GaN, with a thickness of 50-110nm, Mg doping concentration is 1019Magnitude
(2) mesa-isolated is carried out, ion implanting or plasma can be used as exposure mask using photoresist or deielectric-coating
Body etching；
(3) anode and cathode region is performed etching as exposure mask using photoresist, carves p-type doping layer, is put into later
Electron beam deposition platform deposit ohmic contact metal Ti/Al/Ni/Au (20nm/130/nm/50nm/150nm) simultaneously remove clear
It washes, 890 DEG C of 30s is carried out to sample later and anneal to form Ohmic contact, respectively anode and cathode；
(4) it is lithographically formed anode region 7, recycles electron beam deposition Ni/Au (50/150nm) to be removed, in nitrogen atmosphere
Lower 400 DEG C of 10min annealing forms Ohmic contact with p-GaN, completes the production of device.
The working principle of the III group-III nitride diode (being also regarded as polarization superjunction diode) of aforementioned p-type anode is such as
Under: cut-in voltage Vth is positive value, and as anode voltage Va < Vth, anode is exhausted with the two-dimensional electron gas under p-GaN, at device
In closed state.When 7 biasing of anode reaches Va > Vth, anode is inducted with the two-dimensional electron gas under p-GaN, while hetero-junctions
The two-dimensional electron gas at interface is inducted again, anode 5 and cathode 6 is connected, device is in the open state.
III group-III nitride diode structure of p-type anode provided by the invention is simple, and wherein p-type third semiconductor can lead to
The realization of the technology modes such as injection, extension is crossed, simple process is controllable, it is easy to be mass produced, and utilize p-GaN anode,
Current density can also be improved by conductivity modulation effect, reduce conducting resistance.
It should be noted that " anode region " that refers in this specification, " cathode zone " refer to anode, immediately below cathode
Region.It should be appreciated that the technical concepts and features of above-described embodiment only to illustrate the invention, its object is to allow be familiar with this skill
The personage of art cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.All bases
Equivalent change or modification made by spirit of the invention, should be covered by the protection scope of the present invention.
Claims (11)
1. a kind of III group-III nitride diode component of p-type anode, characterized by comprising:
First hetero-junctions, including the first semiconductor and the second semiconductor being formed on the first semiconductor, second semiconductor
Two-dimensional electron gas is formed with the band gap for being wider than the first semiconductor, and in first heterojunction structure；
Second hetero-junctions is partly led including second semiconductor and the third for being formed in the second semiconductor surface regional area
Body, the third semiconductor can exhaust the two-dimensional electron gas in first hetero-junctions；And
Anode and cathode, wherein the anode includes the first anode and second plate being electrically connected to each other, the first anode and
Cathode is electrically connected with the two-dimensional electron gas in first hetero-junctions, and the second plate and third semiconductor form Ohmic contact
Or Schottky contacts.
2. III group-III nitride diode component of p-type anode according to claim 1, it is characterised in that: described the first half
Conductor, the second semiconductor material be selected from III group-III nitride；Preferably, the material of first semiconductor includes GaN；It is preferred that
, the material of second semiconductor includes AlxGa(1-x)N, AlInGaN or InxAl(1-x)N, 0 x≤1 <；And/or described
Three semiconductors are p-type semiconductor；Preferably, the material of the third semiconductor includes p-type wide bandgap semiconductor；It is furthermore preferred that
The p-type wide bandgap semiconductor includes III group-III nitride of p-type；It is furthermore preferred that III group-III nitride of p-type includes p-type GaN, p-type
InGaN or p-type InN；It is furthermore preferred that the p-type wide bandgap semiconductor includes p-NiO.
3. III group-III nitride diode component of p-type anode according to claim 1, it is characterised in that: first sun
Pole and cathode and the second semiconductor form Ohmic contact.
4. III group-III nitride diode component of p-type anode according to claim 1 or 3, it is characterised in that: described first
Anode is wholely set with second plate.
5. III group-III nitride diode component of p-type anode according to claim 1, it is characterised in that: when described
When the voltage applied on two anodes is greater than a cut-in voltage, the diode component is in the open state, the cut-in voltage foot
So that the two-dimensional electron gas in the first hetero-junctions inducts again and is electrically connected the first anode with cathode；And when in second sun
When the extremely upper voltage applied is less than the cut-in voltage, the diode component is in close state；Preferably, the cathode connects
Ground.
6. the production method of III group-III nitride diode component of p-type anode described in any one of claim 1-5, feature exist
In including:
The first semiconductor, the second semiconductor and third semiconductor are set gradually on substrate,
Make anode and cathode, the anode includes the first anode and second plate being electrically connected to each other, and make the first anode and
Cathode is electrically connected with the two-dimensional electron gas in first hetero-junctions, and second plate and third semiconductor is made to form Ohmic contact
Or Schottky contacts；And
Remove the third semiconductor being distributed between anode and cathode.
7. production method according to claim 6, characterized by comprising: at least deposited with Metallo-Organic Chemical Vapor,
Any mode in molecular beam epitaxy, atomic layer deposition, physical vapour deposition (PVD) and magnetron sputtering grow to be formed the first semiconductor,
Second semiconductor and third semiconductor；Preferably, the substrate includes gallium nitride, silicon carbide, silicon or Sapphire Substrate.
8. production method according to claim 6, characterized by comprising: at least through epitaxial p-type impurity doping techniques
Or n-type impurity injection technique realizes the p-type of third semiconductor；Preferably, wherein the p-type impurity element used includes Mg or Zn.
9. the production method of III group-III nitride diode component of p-type anode described in any one of claim 1-5, feature exist
In including:
The first semiconductor, the second semiconductor are set gradually on substrate；
Formation third semiconductor on second semiconductor is grown in using selective area epitaxial mode；
Make anode and cathode, the anode includes the first anode and second plate being electrically connected to each other, and make the first anode and
Cathode is electrically connected with the two-dimensional electron gas in first hetero-junctions, and second plate and third semiconductor is made to form Ohmic contact
Or Schottky contacts and third semiconductor is covered completely.
10. manufacturing method according to claim 9, characterized by comprising: at least deposited with Metallo-Organic Chemical Vapor,
Any mode in molecular beam epitaxy, atomic layer deposition, physical vapour deposition (PVD) and magnetron sputtering grow to be formed the first semiconductor,
Second semiconductor and third semiconductor；Preferably, the substrate includes gallium nitride, silicon carbide, silicon or Sapphire Substrate.
11. manufacturing method according to claim 9, characterized by comprising: at least through epitaxial p-type impurity doping techniques
Or n-type impurity injection technique realizes the p-type of third semiconductor；Preferably, wherein the p-type impurity element used includes Mg or Zn.
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| CN112420850A (en) * | 2019-08-23 | 2021-02-26 | 苏州捷芯威半导体有限公司 | Semiconductor device and preparation method thereof |
| CN113638003A (en) * | 2021-08-05 | 2021-11-12 | 河北工业大学 | Nitride-based device for artificial photosynthesis and preparation method thereof |
| CN113659013A (en) * | 2021-06-29 | 2021-11-16 | 西安电子科技大学 | Schottky diode with p-type oxide dielectric composite mixed anode and manufacturing method thereof |
| WO2022032558A1 (en) * | 2020-08-13 | 2022-02-17 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor device structures and methods of manufacturing the same |
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| CN112420850A (en) * | 2019-08-23 | 2021-02-26 | 苏州捷芯威半导体有限公司 | Semiconductor device and preparation method thereof |
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| CN113638003A (en) * | 2021-08-05 | 2021-11-12 | 河北工业大学 | Nitride-based device for artificial photosynthesis and preparation method thereof |
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