CN109888013A - The enhanced GaN base HEMT device and preparation method thereof of magnesium doping preparation - Google Patents
The enhanced GaN base HEMT device and preparation method thereof of magnesium doping preparation Download PDFInfo
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- CN109888013A CN109888013A CN201910215307.6A CN201910215307A CN109888013A CN 109888013 A CN109888013 A CN 109888013A CN 201910215307 A CN201910215307 A CN 201910215307A CN 109888013 A CN109888013 A CN 109888013A
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Abstract
The invention discloses the enhanced GaN base HEMT devices and preparation method thereof of magnesium doping preparation.It the described method comprises the following steps: (1) making gate electrode contact window by lithography above AlxGa1-xN barrier layer；(2) surface deposited metal magnesium of the electron beam evaporation/thermal evaporation/magnetron sputtering method after photoetching is used；(3) unexposed photoresist is removed using stripping technology；(4) diffusing, doping of thermal annealing is carried out using epitaxial wafer of the thermal anneal process to deposition magnesium；(5) the surface metal magnesium after annealing is removed by preparing dilute hydrochloric acid, obtains enhanced GaN base HEMT device.The present invention utilizes magnesium metal thermal diffusion technology, realizes the p-type doping of AlxGa1-xN barrier layer below gate electrode, prepares enhanced GaN base HEMT device.The preparation method has the advantages that simple process, low in cost, for realizing that high-performance GaN base HEMT device is of great significance.
Description
Technical field
The invention belongs to technical field of semiconductor device, and in particular to a kind of enhanced GaN base HEMT of magnesium doping preparation
Device and preparation method thereof.
Background technique
Power electronic devices is the core element of power electronic system.With the fast development of power electronic technique, tradition
Silicon materials and second generation semiconductor material limitation it is increasingly prominent, the power electronic devices based on the material can not expire
Sufficient electric system high frequency, low-loss and in terms of urgent need.Using GaN material as the third generation of representative
Semiconductor material with wide forbidden band because having the characteristics that big forbidden bandwidth, high critical breakdown strength and extremely strong capability of resistance to radiation,
Brilliant advantage is shown in terms of power electronic devices.
High electron mobility transistor (HEMT) based on AlGaN/GaN hetero-junctions, due to two-dimensional electron gas in hetero-junctions
(2DEG) surface density is about 1013㎝-2, mobility is higher than 1500 ㎝, 2 V-1∙s-1, so that GaN device has low on-resistance and height
Working frequency is able to satisfy next-generation power electronic system more high-power to power device, higher frequency, smaller volume and more severe
The requirement of hot operation.In recent years, the development of GaN material promotes its research and application in the opto-electronic device.
Conventional AlGaN/GaN HEMT device, even if any grid voltage is not added, is deposited in channels due to material polarization characteristic
In the 2DEG of high concentration, so that device is in normally open, as depletion device.In order to realize turn-off function, it is necessary to apply
Negative grid voltage just can be with.And in device for power switching, angularly require that switch is normally off from safety and energy conservation,
Therefore extensive work is dedicated to realizing enhanced GaN base HEMT device.Realize that enhancement device starting point is exactly to pass through change grid
Channel region below extremely, so that conduction band is located at fermi level or more when grid voltage is zero, such device is in normal status, applies
Positive bias is on device.Currently, people have successfully prepared enhanced AlGaN/GaN using following methods
HEMT device:
1, the enhanced GaN base HEMT of 2DEG concentration realization for reducing AlGaN/GaN heterojunction boundary is designed and sheared by energy band
Device.It common are side under the gate, pass through one layer of P-GaN/P type AlGaN of MOCVD or MBE growth above AlGaN potential barrier
Doped layer exhausts the 2DEG below grid.This method disadvantage be it is at high cost, the time is long, and process conditions are complicated, can not
It realizes compatible with depletion type GaN base HEMT device.Enhanced GaN base HEMT device can not be prepared on same one piece material
Part also develops depletion type GaN base HEMT device.Therefore, the development that this method is unable to satisfy GaN Digital Logical Circuits needs
It wants.
2, the 2DEG reduced by the way that the AlGaN potential barrier thickness in grid region is thinned under its polarity effect reduction grid is dense
Degree, to realize enhanced kind of operation.The problem of this method maximum is that very high etching precision is needed to control barrier layer
Etch thicknesses, surface damage caused by addition etching will also result in the electric leakage of device, reduce the performance of device.
3, F ion is injected to AlGaN potential barrier below grid, since F ion has very strong elecrtonegativity to exhaust grid
2DEG below pole realizes enhanced GaN base HEMT device.The problem of this method maximum is that F ion injection can destroy
AlGaN/GaN heterojunction boundary characteristic, causes the performance degradation of GaN base HEMT device.
In short, existing enhanced GaN base HEMT device technical solution all has larger problem, need to invent new technology
Method.
Summary of the invention
In order to overcome the shortcomings of in the prior art and disadvantage, is adulterated the purpose of the present invention is to provide a kind of magnesium and realize enhancing
Type GaN base HEMT device and preparation method thereof.
The present invention is able to solve existing by metal-organic chemical vapor deposition equipment (MOCVD) or molecular beam epitaxy
(MBE) the problems such as p-type doped layer is at high cost, the time is long, process conditions are complicated under the grid grown, realizes GaN base HEMT device
Normally-off operation.
The purpose of the present invention is realized at least through one of following technical solution.
Magnesium provided by the invention adulterates the method for preparing enhanced GaN base HEMT device, is by photoetching gate electrode window
One layer of magnesium metal is deposited on mouth, makes magnesium metal in Al using thermal anneal processxGa1-xDiffusion downwards and activation shape above N barrier layer
At p-type AlGaN doped layer, to exhaust the 2DEG below gate electrode.
A kind of magnesium doping provided by the invention prepares enhanced GaN base HEMT device, including silicon substrate, GaN epitaxial layer,
AlxGa1-xN barrier layer, p-type AlGaN doped layer, gate electrode, source electrode and drain electrode；The GaN epitaxial layer is in silicon substrate
On, the AlxGa1-xN barrier layer is in GaN epitaxial layer；The p-type AlGaN doped layer is magnesium metal in AlxGa1-xN barrier layer
Upper surface downwards diffuse to form；The AlxGa1-xX in N barrier layer indicates Al constituent content, the value range of the x
For 0.01-0.5；The gate electrode is contacted with the upper surface of p-type AlGaN doped layer；The source electrode and drain electrode respectively with
AlxGa1-xTwo side contacts of N barrier layer upper surface.
It is provided by the invention it is a kind of prepare the doping of above-mentioned magnesium and prepare enhanced GaN base HEMT device (there is magnesium doping P-
AlGaN structure), comprising the following steps:
(1) use photoetching technique in the Al of silicon substrate GaN epitaxy piecexGa1-xGate electrode contact hole is prepared in photoetching on N barrier layer
Mouthful, obtain the device of the contact window containing gate electrode；
(2) in step (1) gate electrode contact window surface, one layer of magnesium metal is deposited, the device containing magnesium metal is obtained；
(3) stripping technology is used to carry out lift-off processing to unexposed photoresist on the device containing magnesium metal described in step (2),
Device after obtaining lift-off processing；
(4) thermal anneal process is carried out to the device after step (3) described lift-off processing, makes magnesium metal diffusing, doping to AlxGa1-xN
Barrier layer forms p-type AlGaN doped layer, the device after obtaining thermal annealing；
(5) after thermal anneal process, dilute hydrochloric acid solution is prepared, then with dilute hydrochloric acid solution to the metal of p-type AlGaN doping layer surface
Magnesium is removed processing, obtains removal treated device；
(6) Al in step (5) removal treated the devicexGa1-xOn N barrier layer successively at photoetching, vapor deposition and annealing
Reason, preparation source electrode, drain electrode and gate electrode obtain the magnesium doping and prepare enhanced GaN base HEMT device (with magnesium doping
P-AlGaN structure).
Further, step (1) silicon substrate is silicon substrate；The GaN epitaxy piece is GaN/AlGaN epitaxial layer.
Further, step (1) AlxGa1-xIn N barrier layer, x indicates Al constituent content, the value range of the x
For 0.01-0.5.
Further, the mode of deposition described in step (2) includes electron beam evaporation, thermal evaporation and magnetron sputtering.
Further, magnesium metal described in step (2) with a thickness of 10-200nm.
Further, the temperature of the diffusing, doping processing of thermal annealing described in step (4) is 400-1050 degrees Celsius；
Further, the time of the diffusing, doping processing of thermal annealing described in step (4) is 5-300 minutes.
Further, thermal annealing described in step (4) diffusing, doping processing need in vacuum atmosphere, the vacuum atmosphere
Vacuum degree is 0-10-2Pa。
Further, the concentration range of dilute hydrochloric acid solution described in step (5) is 0.01mol/L-0.5mol/L.
The present invention provides a kind of doping of the magnesium as made from above-mentioned preparation method and prepares enhanced GaN base HEMT device.
Preparation method principle provided by the invention is as follows.
The preparation method of the enhanced GaN base HEMT device of magnesium doping provided by the invention, passes through electron beam evaporation first
Area of grid deposits one layer of magnesium metal, and thermal annealing makes Al under vacuum atmospherexGa1-xThe magnesium metal of N potential barrier layer surface high temperature with
And to Al under the action of concentration gradientxGa1-xThe diffusion of N barrier layer, and magnesium atom displaces Al at high temperaturexGa1-xAl in N is former
Son or Ga atom form one layer of p-type AlGaN doped layer to be activated, in diffusion zone.The doped layer is able to ascend conduction band
The purpose for exhausting 2DEG below gate electrode is played, to form enhanced GaN base HEMT device.
Compared with prior art, the invention has the advantages that and the utility model has the advantages that
The present invention rectangular is under the gate electrode exhausted under gate electrode using the principle of magnesium metal thermal diffusion at p-type AlGaN doped layer
The 2DEG of side, this method is at low cost, and the time is short, reduces and prepares device cost, optimized device performance.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that magnesium of the invention adulterates enhanced GaN base HEMT device；
Wherein, 1 it is silicon substrate, 2 be GaN epitaxial layer, 3 is AlxGa1-xN barrier layer, 4 be p-type AlGaN doped layer, 5 be electric leakage
Pole, 6 be gate electrode, 7 be source electrode.
Fig. 2 is that magnesium made from the embodiment of the present invention 1 adulterates enhanced GaN base HEMT device transfer characteristic curve figure.
Fig. 3 is that the enhanced GaN base HEMT device output characteristic curve figure of magnesium doping is made in the embodiment of the present invention 1.
Specific embodiment
Specific implementation of the invention is described further below in conjunction with attached drawing and example, but implementation and protection of the invention
It is without being limited thereto.If it is existing to be that those skilled in the art can refer to it is noted that there is the not special process of detailed description below
Technology realize or understand.
Embodiment 1
(1) in the Al of silicon substrate GaN epitaxy piecexGa1-xGate electrode contact window is prepared in photoetching on N barrier layer, is obtained containing grid electricity
The device of pole contact window；The AlxGa1-xIn N barrier layer, the x value is 0.01；
(2) in step (1) gate electrode contact window surface, one layer of magnesium metal, gold are deposited using the method for electron beam evaporation
Belong to magnesium with a thickness of 10nm；Obtain the device containing magnesium metal；
(3) lift-off processing is carried out to photoresist unexposed on the device containing magnesium metal described in step (2), after obtaining lift-off processing
Device；
(4) thermal anneal process is carried out to the device after step (3) described lift-off processing using thermal anneal process, spreads magnesium metal
It is doped to AlxGa1-xN barrier layer forms p-type AlGaN doped layer, the device after obtaining thermal annealing；Thermal annealing atmosphere is vacuum, very
Empty vacuum degree is 0-10-2Pa；The temperature of thermal annealing is 400 degrees Celsius, and the time of thermal annealing is 5 minutes；
(5) after thermal anneal process, compound concentration is the dilute hydrochloric acid solution of 0.01mol/L, then with dilute hydrochloric acid solution to p-type
The magnesium metal of AlGaN doping layer surface is removed processing, obtains removing treated device；
(6) Al in step (5) removal treated the devicexGa1-xLight is successively carried out on N barrier layer (x 0.01)
It carves, be deposited and make annealing treatment, preparation source electrode, drain electrode and gate electrode obtain the magnesium doping and prepare enhanced GaN base HEMT
Device.
Fig. 1 is the structural schematic diagram that magnesium doping of the invention prepares enhanced GaN base HEMT device, made from embodiment 1
Magnesium doping prepares enhanced GaN base HEMT device, as shown in Figure 1, including silicon substrate, GaN epitaxial layer, AlxGa1-xN barrier layer, P
Type AlGaN doped layer, gate electrode, source electrode and drain electrode；The GaN epitaxial layer on a silicon substrate, the AlxGa1-xN gesture
Barrier layer is in GaN epitaxial layer；The p-type AlGaN doped layer is magnesium metal in AlxGa1-xIt spreads downwards the upper surface of N barrier layer
It is formed；The AlxGa1-xX in N barrier layer indicates Al constituent content, and the value range of the x is 0.01；The gate electrode
It is contacted with the upper surface of p-type AlGaN doped layer；The source electrode and drain electrode respectively with AlxGa1-xN barrier layer upper surface
Two side contacts.
Fig. 2 is the transfer curve test result of the enhanced GaN base HEMT device prepared after magnesium made from embodiment 1 adulterates
Figure, is 1.1 V by the threshold voltage that curve can obtain the device, and mutual conductance is three arrows in 6 mS(Fig. 2 from top to bottom, wherein
What the arrow of the top indicated is mutual conductance, and what middle arrow indicated is source-drain current, and what lowermost arrow obliquely downward indicated is threshold
Threshold voltage).
Fig. 3 is the curve of output test result of the enhanced GaN base HEMT device prepared after magnesium made from embodiment 1 adulterates
Figure can obtain device when grid voltage is 4 V by curve, and it is 18 mA that source and drain, which exports electric current,.
By Fig. 2 and Fig. 3 it is found that the embodiment of the present invention 1 is good by the enhanced GaN base HEMT device performance of magnesium doping preparation
Good, threshold voltage is higher than what conventional method was prepared, source and drain outputting current steadily.
Embodiment 2
(1) in the Al of silicon substrate GaN epitaxy piecexGa1-xGate electrode contact window is prepared in photoetching on N barrier layer, is obtained containing grid electricity
The device of pole contact window；The AlxGa1-xIn N barrier layer, the x value is 0.25；
(2) in step (1) gate electrode contact window surface, one layer of magnesium metal, gold are deposited using the method for electron beam evaporation
Belong to magnesium with a thickness of 100nm；Obtain the device containing magnesium metal；
(3) lift-off processing is carried out to photoresist unexposed on the device containing magnesium metal described in step (2), after obtaining lift-off processing
Device；
(4) thermal anneal process is carried out to the device after step (3) described lift-off processing using thermal anneal process, spreads magnesium metal
It is doped to AlxGa1-xN barrier layer forms p-type AlGaN doped layer, the device after obtaining thermal annealing；Thermal annealing atmosphere is vacuum, very
Empty vacuum degree is 0-10-2Pa；The temperature of thermal annealing is 700 degrees Celsius, and the time of thermal annealing is 150 minutes；
(5) after thermal anneal process, compound concentration is the dilute hydrochloric acid solution of 0.25mol/L, then with dilute hydrochloric acid solution to p-type
The magnesium metal of AlGaN doping layer surface is removed processing, obtains removing treated device；
(6) Al in step (5) removal treated the devicexGa1-xLight is successively carried out on N barrier layer (x 0.01)
It carves, be deposited and make annealing treatment, preparation source electrode, drain electrode and gate electrode obtain the magnesium doping and prepare enhanced GaN base HEMT
Device.
Fig. 1 is the structural schematic diagram that magnesium doping of the invention prepares enhanced GaN base HEMT device, made from embodiment 2
Magnesium doping prepares enhanced GaN base HEMT device, shown referring to Fig.1, including silicon substrate, GaN epitaxial layer, AlxGa1-xN potential barrier
Layer, p-type AlGaN doped layer, gate electrode, source electrode and drain electrode；The GaN epitaxial layer on a silicon substrate, the AlxGa1- xN barrier layer is in GaN epitaxial layer；The p-type AlGaN doped layer is magnesium metal in AlxGa1-xThe upper surface of N barrier layer is expanded downwards
Dissipate formation；The AlxGa1-xX in N barrier layer indicates Al constituent content, and the value range of the x is 0.25；The grid electricity
Pole is contacted with the upper surface of p-type AlGaN doped layer；The source electrode and drain electrode respectively with AlxGa1-xN barrier layer upper surface
Two side contacts.
The magnesium that embodiment 2 is prepared adulterate enhanced GaN base HEMT device transfer and output characteristics result and implement
Example 1 is similar, can refer to Fig. 2 and Fig. 3.
Embodiment 3
(1) in the Al of silicon substrate GaN epitaxy piecexGa1-xGate electrode contact window is prepared in photoetching on N barrier layer, is obtained containing grid electricity
The device of pole contact window；The AlxGa1-xIn N barrier layer, the x value is 0.5；
(2) in step (1) gate electrode contact window surface, one layer of magnesium metal, gold are deposited using the method for electron beam evaporation
Belong to magnesium with a thickness of 200nm；Obtain the device containing magnesium metal；
(3) lift-off processing is carried out to photoresist unexposed on the device containing magnesium metal described in step (2), after obtaining lift-off processing
Device；
(4) thermal anneal process is carried out to the device after step (3) described lift-off processing using thermal anneal process, spreads magnesium metal
It is doped to AlxGa1-xN barrier layer forms p-type AlGaN doped layer, the device after obtaining thermal annealing；Thermal annealing atmosphere is vacuum, very
Empty vacuum degree is 0-10-2Pa；The temperature of thermal annealing is 1050 degrees Celsius, and the time of thermal annealing is 300 minutes；
(5) after thermal anneal process, compound concentration is the dilute hydrochloric acid solution of 0.5mol/L, then with dilute hydrochloric acid solution to p-type AlGaN
The magnesium metal of doping layer surface is removed processing, obtains removing treated device；
(6) Al in step (5) removal treated the devicexGa1-xLight is successively carried out on N barrier layer (x 0.01)
It carves, be deposited and make annealing treatment, preparation source electrode, drain electrode and gate electrode obtain the magnesium doping and prepare enhanced GaN base HEMT
Device.
Fig. 1 is the structural schematic diagram that magnesium doping of the invention prepares enhanced GaN base HEMT device, made from embodiment 3
Magnesium doping prepares enhanced GaN base HEMT device, shown referring to Fig.1, including silicon substrate, GaN epitaxial layer, AlxGa1-xN potential barrier
Layer, p-type AlGaN doped layer, gate electrode, source electrode and drain electrode；The GaN epitaxial layer on a silicon substrate, the AlxGa1- xN barrier layer is in GaN epitaxial layer；The p-type AlGaN doped layer is magnesium metal in AlxGa1-xThe upper surface of N barrier layer is expanded downwards
Dissipate formation；The AlxGa1-xX in N barrier layer indicates Al constituent content, and the value range of the x is 0. 5；The grid electricity
Pole is contacted with the upper surface of p-type AlGaN doped layer；The source electrode and drain electrode respectively with AlxGa1-xN barrier layer upper surface
Two side contacts.
The magnesium that embodiment 3 is prepared adulterate enhanced GaN base HEMT device transfer and output characteristics result and implement
Example 1 is similar, can refer to Fig. 2 and Fig. 3.
Preparation method provided by the invention uses thermal anneal process, passes through AlxGa1-xN barrier layer upper gate area deposition
Magnesium metal under high temperature action to AlxGa1-xDiffusion and activation consume to form p-type AlGaN doped layer below N barrier layer
2DEG to the greatest extent below gate electrode.It is enhanced to prepare the method reduce p-type AlGaN doped layer is grown by epi dopant
The cost of GaN base HEMT device, device preparation time is short, has to the further research and development of industrial production and Related product important
Reference value.
Magnesium provided by the invention adulterates the enhanced HEMT device of enhanced GaN base HEMT device and traditional p-type doping preparation
Part compares, and does not need the control of very high etching precision, and step is less, and the equipment used is less thus cost is relatively low, the time compared with
It is short, thus there are potential advantages outstanding and bright prospects.
Above embodiments are only preferrred embodiment of the present invention, for explaining only the invention, are not intended to limit the present invention, this
Field technical staff should belong to guarantor of the invention without departing from change made under spirit of the invention, replacement, modification etc.
Protect range.
Claims (10)
1. a kind of doping of magnesium prepares enhanced GaN base HEMT device, which is characterized in that including silicon substrate, GaN epitaxial layer,
AlxGa1-xN barrier layer, p-type AlGaN doped layer, gate electrode, source electrode and drain electrode；The GaN epitaxial layer is in silicon substrate
On, the AlxGa1-xN barrier layer is in GaN epitaxial layer；The p-type AlGaN doped layer is magnesium metal in AlxGa1-xN barrier layer
Upper surface downwards diffuse to form；The AlxGa1-xX in N barrier layer indicates Al constituent content, the value range of the x
For 0.01-0.5；The gate electrode is contacted with the upper surface of p-type AlGaN doped layer；The source electrode and drain electrode respectively with
AlxGa1-xTwo side contacts of N barrier layer upper surface.
2. it is a kind of prepare magnesium described in claim 1 doping prepare enhanced GaN base HEMT device, which is characterized in that including following
Step:
(1) in the Al of silicon substrate GaN epitaxy piecexGa1-xGate electrode contact window is prepared in photoetching on N barrier layer, is obtained containing gate electrode
The device of contact window；
(2) in step (1) gate electrode contact window surface, deposited metal magnesium obtains the device containing magnesium metal；
(3) lift-off processing is carried out to photoresist unexposed on the device containing magnesium metal described in step (2), after obtaining lift-off processing
Device；
(4) thermal anneal process is carried out to the device after step (3) described lift-off processing, makes magnesium metal diffusing, doping to AlxGa1-xN
Barrier layer forms p-type AlGaN doped layer, the device after obtaining thermal annealing；
(5) after thermal anneal process, dilute hydrochloric acid solution is prepared, then with dilute hydrochloric acid solution to the metal of p-type AlGaN doping layer surface
Magnesium is removed processing, obtains removal treated device；
(6) Al in step (5) removal treated the devicexGa1-xPhotoetching is successively carried out on N barrier layer, is deposited and is moved back
Fire processing, preparation source electrode, drain electrode and gate electrode obtain the magnesium doping and prepare enhanced GaN base HEMT device.
3. preparation method according to claim 2, which is characterized in that step (1) silicon substrate is silicon substrate；The GaN
Epitaxial wafer is GaN/AlGaN epitaxial layer.
4. preparation method according to claim 2, which is characterized in that the mode of deposition described in step (2) includes electronics
Beam evaporation, thermal evaporation and magnetron sputtering.
5. preparation method according to claim 2, which is characterized in that magnesium metal described in step (2) with a thickness of 10-
200nm。
6. preparation method according to claim 2, which is characterized in that at the diffusing, doping of thermal annealing described in step (4)
The temperature of reason is 400-1050 degrees Celsius.
7. preparation method according to claim 2, which is characterized in that at the diffusing, doping of thermal annealing described in step (4)
The time of reason is 5-300 minutes.
8. preparation method according to claim 2, which is characterized in that at the diffusing, doping of thermal annealing described in step (4)
Reason is handled under vacuum atmosphere.
9. preparation method according to claim 8, which is characterized in that the vacuum degree of the vacuum atmosphere is 0-10-2Pa。
10. preparation method according to claim 2, which is characterized in that the concentration model of dilute hydrochloric acid solution described in step (5)
It encloses for 0.01mol/L-0.5mol/L.
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| CN110828557A (en) * | 2019-09-30 | 2020-02-21 | 西安交通大学 | P-GaN ohmic contact electrode and preparation method and application thereof |
| CN111681958A (en) * | 2020-05-29 | 2020-09-18 | 华南理工大学 | Method for preparing normally-off HEMT device by novel heterostructure magnesium diffusion |
| CN113823673A (en) * | 2021-08-26 | 2021-12-21 | 华南理工大学 | Enhanced GaN HEMT device based on superlattice structure and preparation method thereof |
| CN114744071A (en) * | 2022-03-29 | 2022-07-12 | 华南理工大学 | Ultraviolet detector and preparation method and application thereof |
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