CN111681958A - Method for preparing normally-off HEMT device by novel heterostructure magnesium diffusion - Google Patents

Method for preparing normally-off HEMT device by novel heterostructure magnesium diffusion Download PDF

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CN111681958A
CN111681958A CN202010480063.7A CN202010480063A CN111681958A CN 111681958 A CN111681958 A CN 111681958A CN 202010480063 A CN202010480063 A CN 202010480063A CN 111681958 A CN111681958 A CN 111681958A
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normally
magnesium
hemt device
aln
heterostructure
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李国强
万利军
孙佩椰
阙显沣
姚书南
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South China University of Technology SCUT
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South China University of Technology SCUT
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT

Abstract

The invention discloses a method for preparing a normally-off HEMT device by novel heterostructure magnesium diffusion. The method comprises the following steps: growing an AlN material on the Si-based GaN epitaxial wafer by an atomic layer deposition technology, photoetching to prepare a grid window, depositing magnesium metal in a grid region by adopting a thermal evaporation and stripping process, thermally annealing to realize p-type doping of the AlN material, performing magnesium oxidation on the surface under an air atmosphere to realize a magnesium oxide passivation layer, and preparing a source electrode, a drain electrode and a grid electrode to obtain the normally-off HEMT device. The magnesium diffusion AlN/GaN heterostructure in the method is novel, AlN is used as a barrier layer, the concentration of two-dimensional electron gas is improved, the saturation current of a device is improved, and the p-type doping of AlN material is realized, so that the problem of difficult doping of a compound semiconductor with high Al component is solved. The method is a novel method for realizing the normally-off HEMT device by doping the heterostructure, and has important significance for realizing the high-performance normally-off HEMT device.

Description

Method for preparing normally-off HEMT device by novel heterostructure magnesium diffusion
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a method for preparing a normally-off HEMT device by novel heterostructure magnesium diffusion.
Background
With the continuous application and development of power radio frequency devices, normally-off HEMT devices become hot research spots in the field.
At present, the heterostructure of a mainstream normally-off device is mainly AlGaN/GaN, meanwhile, p-type thermal doping of AlGaN materials in the heterostructure is studied a few times, only a few AlGaN materials are subjected to p-type thermal diffusion doping at present, but the p-type thermal diffusion doping has a large influence on saturation current, so that the saturation output current is low, and the overall working performance of the device is further influenced.
CN109888013A discloses an enhanced GaN-based HEMT device prepared by magnesium doping and a preparation method thereof, but in the thermal diffusion method, only the common AlGaN/GaN heterostructure is doped, but the AlN material with higher Al content is hardly doped, and the requirement of the normally-off HEMT device for realizing large saturation output current cannot be well satisfied.
Disclosure of Invention
In order to overcome the defects and shortcomings in the prior art, the invention aims to provide a method for preparing a normally-off HEMT device by novel heterostructure magnesium diffusion. The method comprises the steps of growing an AlN barrier layer on a Si-based GaN epitaxial wafer through an Atomic Layer Deposition (ALD) technology to form an AlN/GaN heterostructure, preparing a grid window through a photoetching process, depositing a layer of metal magnesium in a grid region through a thermal evaporation and stripping process, carrying out thermal annealing in a vacuum atmosphere to thermally diffuse the magnesium to realize p-type doping of an AlN material in the grid region, carrying out surface magnesium oxidation in an air atmosphere to realize a magnesium oxide passivation layer structure, and finally realizing the normally-off HEMT device characteristic and the large saturation output current characteristic.
The purpose of the invention is realized by at least one of the following technical solutions.
The preparation method provided by the invention realizes the performance of the normally-off HEMT device and solves the p-type doping problem of the AlN material.
The invention provides a method for preparing a normally-off HEMT device by novel heterostructure magnesium diffusion, which comprises the following steps: on the substrate of the Si-based GaN epitaxial wafer, in-situ growth AlN material is adopted as a barrier layer in the heterostructure, p-AlN is realized through magnesium diffusion, the effect of exhausting two-dimensional electron gas below the p-AlN is achieved, and the normally-off HEMT device is obtained.
Further, the method of growing AlN material in-situ includes Atomic Layer Deposition (ALD).
Further, the heterostructure is AlN/GaN.
Further, the AlN material has a thickness of 1-15 nm.
Further, the magnesium is diffused by thermal annealing.
Further, the temperature of the thermal annealing is 200-1000 ℃.
Further, the time of the thermal annealing is 0.5-10 min.
Further, the thermal annealing is performed under a vacuum atmosphere having a pressure of less than 0.1 Pa.
The invention provides a method for preparing a normally-off HEMT device by novel heterostructure magnesium diffusion, which comprises the following steps:
(1) growing an AlN material serving as a barrier layer on the Si-based GaN epitaxial wafer substrate by adopting an atomic lamination method to obtain an AlN/GaN heterojunction material;
(2) defining the structural shape of a magnesium grid bar on the AlN/GaN heterojunction material in the step (1) by adopting a photoetching method;
(3) depositing metal magnesium by adopting an electron beam evaporation method, and leaving magnesium grid bars through a stripping process to obtain a device containing the magnesium grid bars;
(4) in a vacuum rapid annealing furnace, performing thermal annealing treatment on the device containing the magnesium grid bars in the step (3) in a vacuum atmosphere, and performing surface magnesium oxidation treatment in an air atmosphere to obtain a magnesium oxide passivation layer structure;
(5) and preparing a source electrode, a drain electrode and a gate electrode by adopting a photoetching process, an electron beam evaporation and stripping process and a thermal annealing method to obtain the normally-off HEMT device.
Further, the thickness of the magnesium grid bars in the step (3) is 1-100 nm.
The principle of the invention is as follows:
the method provided by the invention is a novel heterostructure doping preparation method, AlN is grown by an atomic layer deposition technology to be used as a barrier layer to form an AlN/GaN heterostructure, because of the strong polarization effect of AlN, dense two-dimensional electron gas can be generated in a heterogeneous channel, so that the current density of a device is improved, then, P-type doping of AlN is formed by gate magnesium diffusion, the two-dimensional electron gas below AlN is exhausted, the normally-closed characteristic of the device is realized, and finally, the residual magnesium metal on the surface is oxidized to form an MgO passivation layer gate medium, so that the phenomenon of gate leakage is favorably inhibited.
The invention realizes magnesium doping by adopting a novel AlN/GaN heterostructure, realizes p-type doping of the novel AlN/GaN heterostructure for the first time, and has important significance for the development of novel heterostructure HEMT devices.
Compared with the prior art, the invention has the following advantages and beneficial effects:
in the preparation method, the magnesium diffusion AlN/GaN heterostructure is novel, AlN is used as a barrier layer, the concentration of two-dimensional electron gas is improved, the saturation output current of the device is further improved, the preparation method has important significance for realizing a high-performance normally-off HEMT device, secondly, the problem of difficult p doping of a high Al component can be solved by effective p-type doping of AlN material, and important reference is provided for p-type doping of other high Al component compound semiconductors.
Drawings
FIG. 1 is a process flow diagram of a method of making an embodiment of the invention;
FIG. 2 is a graph of the transfer characteristics of the device after the doping of Mg in the new heterostructure of example 1 of the present invention;
fig. 3 is a graph of the output characteristics of the device measured after the novel heterostructure of example 1 of the present invention is doped with magnesium.
Detailed Description
The following description of the embodiments of the present invention is provided in connection with the accompanying drawings and examples, but the invention is not limited thereto. It is noted that the processes described below, if not specifically described in detail, are all realizable or understandable by those skilled in the art with reference to the prior art.
Example 1
The method for preparing the normally-off HEMT device by the novel heterostructure magnesium diffusion of the embodiment is as follows (the process flow can refer to fig. 1):
(1) growing a layer of 7nm AlN material on a GaN epitaxial wafer 2 substrate of a silicon substrate 1 by adopting an atomic layer deposition technology to serve as a barrier layer 3, wherein a two-dimensional electron gas 4 is formed by the novel heterostructure;
(2) defining the structural shape of the magnesium grid bar on the GaN/AlN heterojunction material by using a photoetching method and a photoresist 5;
(3) depositing 50nm of metal magnesium 6 by adopting an electron beam evaporation method, and leaving magnesium grid bars by a stripping process;
(4) and carrying out thermal annealing by adopting a vacuum rapid annealing furnace, wherein the thermal annealing temperature is 600 ℃, the annealing time is 5min, the annealing atmosphere is a vacuum atmosphere lower than 0.1Pa, so as to obtain a p-type doped AlN material 7, and carrying out surface magnesium oxidation treatment in an air atmosphere so as to obtain an MgO passivation layer 8.
(5) And preparing a source electrode (ohmic contact electrode), a drain electrode (ohmic contact electrode) and a gate electrode (Schottky contact electrode) by adopting a photoetching process, an electron beam evaporation and stripping process and a thermal annealing method to obtain the normally-off GaN HEMT device.
Fig. 2 is a transfer characteristic curve of a normally-off type GaN HEMT device prepared in example, from which the curve of fig. 2 can be derived: the threshold voltage of the device is 1.5V.
Fig. 3 is an output characteristic curve of a device manufactured after the novel heterostructure is doped with magnesium in the embodiment of the invention, and can be obtained from fig. 3: the maximum saturated output current of the device is 1.4A/mm when Vg = 6V.
Example 2
The method for realizing the normally-off HEMT device by annealing and doping in the embodiment comprises the following steps:
(1) growing a layer of 1nm AlN material on a GaN epitaxial wafer 2 substrate of a Si-based substrate 1 by adopting an atomic layer deposition technology to serve as a barrier layer 3, wherein a two-dimensional electron gas 4 is formed by the novel heterostructure;
(2) defining the structural shape of the magnesium grid bar on the GaN/AlN heterojunction material by using a photoetching method and a photoresist 5;
(3) depositing 1nm of metal magnesium 6 by adopting an electron beam evaporation method, and leaving magnesium grid bars by a stripping process;
(4) and carrying out thermal annealing by adopting a vacuum rapid annealing furnace, wherein the thermal annealing temperature is 1000 ℃, the annealing time is 10min, the annealing atmosphere is a vacuum atmosphere lower than 0.1Pa, so as to obtain a p-type doped AlN material 7, and carrying out surface magnesium oxidation treatment in an air atmosphere so as to obtain an MgO passivation layer 8.
(5) And preparing a source electrode (ohmic contact electrode), a drain electrode (ohmic contact electrode) and a gate electrode (Schottky contact electrode) by adopting a photoetching process, an electron beam evaporation and stripping process and a thermal annealing method to obtain the normally-off GaN HEMT device.
The process flow diagram of the method for preparing the normally-off HEMT device by the novel heterostructure magnesium diffusion in the embodiment 2 is similar to that in the embodiment 1, and can refer to fig. 1; the transfer characteristic curve of the device is similar to that of the device in embodiment 1, and reference can be made to fig. 2, the threshold voltage of the device is 1.6V, and the threshold voltage stability is good; similar to example 1, the device output characteristic curve can be referred to fig. 3, and the maximum saturation output current of the device is 1.5A/mm, which shows that the Mg diffusion maximum saturation output current of the novel heterostructure is excellent.
Example 3
The method for realizing the normally-off HEMT device by annealing and doping in the embodiment comprises the following steps:
(1) growing a layer of 15nm AlN material serving as a barrier layer 3 on a GaN epitaxial wafer 2 substrate of a Si-based substrate 1 by adopting an atomic layer deposition technology, wherein a two-dimensional electron gas 4 is formed by the novel heterostructure;
(2) defining the structural shape of the magnesium grid bar on the GaN/AlN heterojunction material by using a photoetching method and a photoresist 5;
(3) depositing 100nm of metal magnesium 6 by adopting an electron beam evaporation method, and leaving magnesium grid bars by a stripping process;
(4) and carrying out thermal annealing by adopting a vacuum rapid annealing furnace, wherein the thermal annealing temperature is 200 ℃, the annealing time is 0.5min, the annealing atmosphere is a vacuum atmosphere lower than 0.1Pa, so as to obtain a p-type doped AlN material 7, and carrying out surface magnesium oxidation treatment in an air atmosphere so as to obtain an MgO passivation layer 8.
(5) And preparing a source electrode (ohmic contact electrode), a drain electrode (ohmic contact electrode) and a gate electrode (Schottky contact electrode) by adopting a photoetching process, an electron beam evaporation and stripping process and a thermal annealing method to obtain the normally-off GaN HEMT device.
A process flow diagram of the method for preparing the normally-off HEMT device by the novel heterostructure magnesium diffusion in the embodiment 3 is similar to that in the embodiment 1, and can refer to fig. 1, a device transfer characteristic curve is similar to that in the embodiment 1, and can refer to fig. 2, and the device has a threshold voltage of 1.4V and good threshold voltage stability; similar to example 1, the device output characteristic curve can be referred to fig. 3, and the maximum saturation output current of the device is 1.3A/mm, which shows that the Mg diffusion maximum saturation output current of the novel heterostructure is excellent.
The above examples are only preferred embodiments of the present invention, which are intended to be illustrative and not limiting, and those skilled in the art should understand that they can make various changes, substitutions and alterations without departing from the spirit and scope of the invention.

Claims (10)

1. A method for preparing a normally-off HEMT device by novel heterostructure magnesium diffusion is characterized by comprising the following steps: on the substrate of the Si-based GaN epitaxial wafer, in-situ growth AlN material is adopted as a barrier layer in the heterostructure, p-AlN is realized through magnesium diffusion, and two-dimensional electron gas below the p-AlN is exhausted to obtain the normally-off HEMT device.
2. The method of fabricating a normally-off HEMT device according to claim 1, wherein said in-situ growth of AlN material comprises atomic layer deposition.
3. The method of fabricating a normally-off HEMT device according to claim 1, wherein said heterostructure is AlN/GaN.
4. The method for preparing a normally-off HEMT device according to claim 1, wherein said AlN material is 1-15nm thick.
5. The method of fabricating a normally-off HEMT device according to claim 1, wherein said magnesium diffusion is by thermal annealing.
6. The method for preparing a normally-off HEMT device by magnesium diffusion of a novel heterostructure as claimed in claim 5, wherein the thermal annealing temperature is 200-1000 ℃.
7. The method for preparing a normally-off HEMT device according to claim 5, wherein the thermal annealing time is 0.5-10 min.
8. The method of fabricating a normally-off HEMT device according to claim 5, wherein said thermal annealing is performed in a vacuum atmosphere having a pressure less than 0.1 Pa.
9. The method of fabricating a normally-off HEMT device according to claim 1, comprising the steps of:
(1) growing an AlN material serving as a barrier layer on the Si-based GaN epitaxial wafer substrate by adopting an atomic lamination method to obtain an AlN/GaN heterojunction material;
(2) defining the structural shape of a magnesium grid bar on the AlN/GaN heterojunction material in the step (1) by adopting a photoetching method;
(3) depositing metal magnesium by adopting an electron beam evaporation method, and leaving magnesium grid bars through a stripping process to obtain a device containing the magnesium grid bars;
(4) carrying out thermal annealing treatment on the device containing the magnesium grid bars in the step (3) in a vacuum atmosphere, and carrying out surface magnesium oxidation treatment in an air atmosphere to obtain a magnesium oxide passivation layer structure;
(5) and preparing a source electrode, a drain electrode and a gate electrode by adopting a photoetching process, an electron beam evaporation and stripping process and a thermal annealing method to obtain the normally-off HEMT device.
10. The method for preparing a normally-off HEMT device according to claim 9, wherein said magnesium grid bars of step (3) have a thickness of 1-100 nm.
CN202010480063.7A 2020-05-29 2020-05-29 Method for preparing normally-off HEMT device by novel heterostructure magnesium diffusion Pending CN111681958A (en)

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Application publication date: 20200918