CN105914218B - Gallium nitride based light emitting diode structure of integrated amplifier and preparation method thereof - Google Patents
Gallium nitride based light emitting diode structure of integrated amplifier and preparation method thereof Download PDFInfo
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- CN105914218B CN105914218B CN201610385080.6A CN201610385080A CN105914218B CN 105914218 B CN105914218 B CN 105914218B CN 201610385080 A CN201610385080 A CN 201610385080A CN 105914218 B CN105914218 B CN 105914218B
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 97
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 20
- 238000005036 potential barrier Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 230000003321 amplification Effects 0.000 claims description 10
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000007796 conventional method Methods 0.000 claims description 2
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 2
- 238000004891 communication Methods 0.000 abstract description 7
- 238000010276 construction Methods 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 4
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 241000790917 Dioxys <bee> Species 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Abstract
The present invention provides the gallium nitride based light emitting diode structure and preparation method thereof with integrated amplifier.Light emitting diode includes: substrate, undoped GaN buffer layer, N-type GaN conductive layer, multi-quantum well active region, p-type gallium nitride conductive layer, current extending, P electrode, high resistant gallium nitride channel layer, AlGaN potential barrier, source electrode, gate electrode；The present invention relates to the gallium nitride based LED constructions with integrated amplifier, avoid parasitic capacitance existing for discrete device circuit connection, inductance, the electrode design portion in the chip of LED on-off will be controlled, it can be effectively improved the response frequency of luminescent device entirety, improve the visible light communication rate based on gallium nitride based LED.
Description
Technical field
The present invention relates to LED technology fields, and in particular to a kind of gallium nitride base light emitting two of integrated amplifier
Pole pipe structure and preparation method thereof.
Background technique
Light emitting diode (referred to as " LED ") is a kind of semiconducting solid luminescent device, it is using inside semiconductor material
Radiation recombination occurs for conduction band electron and valence band hole, is so that form of photons releases energy and directly shines.It is different by design
Semiconductor material forbidden bandwidth, light emitting diode can emit the light of the different-waveband from infrared to ultraviolet.
Gallium nitride based light emitting diode has many advantages, such as that efficient, energy conservation, long-life and switching speed are fast in the world with it
Broad development is obtained in range.Gallium nitride based light emitting diode issues blue light, and excitated fluorescent powder obtains yellow light, with original blue light
It is mixed to get white light.By quickly switching, communication function may be implemented, therefore the white light LEDs based on gallium nitride have illumination concurrently
With the dual function of communication.Illumination communication at present shared white light LEDs constant-current drive circuit and signal amplification circuit are integrated in one
It rises, interacts, limit the traffic rate of white light LEDs.
Summary of the invention
The present invention gallium nitride based LED constant-current drive circuit and signal amplification circuit mutual shadow shared for existing illumination communication
It rings, the low problem of traffic rate proposes a kind of gallium nitride based LED structure and preparation method thereof of integrated amplifier.
The purpose of the present invention is realized at least through one of following technical solution.
The gallium nitride based light emitting diode structure of integrated amplifier, it is at least successively slow including substrate, gallium nitride under
Rush a part, N-type GaN conductive layer, the multi-quantum well active region, p-type gallium nitride conductive layer, current extending, P electrode of layer；Nitrogen
The another part for changing gallium buffer layer (insulating layer) is up successively arranged high resistant gallium nitride channel layer, AlGaN potential barrier；AlGaN gesture
Barrier layer is equipped with source Ohmic electrode and gate electrode；The diode structure includes transistor current amplification circuit；Current amplifier electricity
Route the nitride buffer layer, AlGaN potential barrier, source Ohmic electrode and gate electrode composition；
In the gallium nitride based light emitting diode structure of the integrated amplifier, the current amplification circuit is GaN/
AlGaN hetero-junctions high electron mobility transistor composition.Current amplification circuit is located at the N electrode in conventional LED structure
Region；The two-dimensional electron gas of GaN/AlGaN hetero-junctions and the N-type conductive layer of light emitting diode connect.
Ground is advanced optimized, the GaN buffer layer is GaN nucleating layer and unintentional doped gan layer, wherein GaN nucleating layer
With a thickness of 10-100 nm, unintentional doped gan layer is with a thickness of 100-4000 nm；
Advanced optimize ground, the doping concentration 2 × 10 of the N-type GaN conductive layer18cm-3-2×1019cm-3。
Ground is advanced optimized, the multi-quantum well active region is periodically overlapping InGaN barrier layer and GaN potential well layer；
Ground is advanced optimized, the doping concentration 2 × 10 of magnesium in the p-type gallium nitride conductive layer18cm-3-2×1020cm-3。
The method of the preparation gallium nitride based light emitting diode structure with integrated amplifier, including walk as follows
It is rapid:
(1) growing gallium nitride LED extension in (MOCVD) reaction chamber is deposited in Metallo-Organic Chemical Vapor according to a conventional method
Piece at least successively includes substrate, undoped GaN buffer layer, N-type GaN conductive layer, multi-quantum well active region, p-type gallium nitride under
Conductive layer, silicon oxide mask layer；
(2) (1) final gained sample is taken out, deposits silica；
(3) (2) final gained sample by photoetching technique, is removed part of silica, retains the dioxy of masks area
SiClx；
(4) sample obtained by (3) is put into inductively coupled plasma etching equipment to the position of removal part of silica
GaN etching is carried out, undoped GaN buffer layer is etched to；
(5) sample obtained by (4) is put into Metallo-Organic Chemical Vapor deposition (MOCVD) reaction chamber, in the etching portion of (4)
Position grows the gallium nitride layer of unintentional doping；
(6) AlGaN potential barrier is grown on the gallium nitride layer of the unintentional doping of the sample obtained by (5)；
(7) sample obtained by (6) is taken out into reaction chamber, depositing Ti Au, photoetching prepares source electrode ohm in AlGaN potential barrier
Contact, and it is etched away silicon oxide mask layer；
(8) p-type current extending and P electrode Ohmic contact are prepared on the p-type gallium nitride conductive layer of the sample obtained by (7)；
(9) grid Schottky contacts are prepared in the AlGaN potential barrier on the sample obtained by (8).
Compared with prior art, the invention has the advantages that and technical effect:
The present invention is big for existing gallium nitride based LED operating current, the low problem of separation control circuit response frequency, proposes
A kind of gallium nitride based LED construction of integrated amplifier, avoids parasitic capacitance existing for discrete device circuit connection, inductance,
The electrode design portion in the chip of LED on-off will be controlled, the photoelectric respone time of luminescent device can be shortened, improve luminescent device
Whole response frequency improves the visible light communication rate based on gallium nitride based LED.
Detailed description of the invention
Fig. 1 is conventional gallium nitride based LED construction diagrammatic cross-section.
Fig. 2 is gallium nitride based LED construction diagrammatic cross-section of the invention.
Fig. 3 is gallium nitride based LED preparation flow figure of the invention.
Fig. 4 is the time resolution luminosity curve of the present invention and conventional separators part.
In figure: 1, substrate；2, undoped GaN buffer layer；3, N-type GaN conductive layer；4, multi-quantum well active region；5, p-type nitrogen
Change gallium conductive layer；6, current extending；7, P electrode；8, high resistant gallium nitride channel layer；9, AlGaN potential barrier；10, source electrode；
11, gate electrode；12, N electrode；13, silicon oxide mask layer.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and examples, but implementation and protection of the invention is not limited to
This.
A kind of gallium nitride based light emitting diode structure of integrated amplifier, as shown in Fig. 2, the light emitting diode is under
1, substrate is followed successively by and；2, undoped GaN buffer layer；3, N-type GaN conductive layer；4, multi-quantum well active region；5, p-type nitrogenizes
Gallium conductive layer；6, current extending；7, P electrode；8, high resistant gallium nitride layer；9, AlGaN potential barrier；10, source electrode；11, grid electricity
Pole；12, N electrode；13, silicon oxide mask layer.
As a kind of example, the preparation step of the gallium nitride based light emitting diode structure of integrated amplifier is as follows:
(1) Sapphire Substrate is put into Metallo-Organic Chemical Vapor chemical deposition equipment by, conventionally grows nitrogen
Change gallium base LED epitaxial wafer；
(2) sample described in (1) is taken out reaction chamber by, deposits silica, with a thickness of 100nm, (a) institute in Fig. 3
Show；
(3) sample described in (2) is used photoetching technique by, is removed part of silica, is retained the dioxy of masks area
SiClx, in Fig. 3 shown in (b)；
(4) sample described in (3) is put into inductively coupled plasma etching equipment by, carries out gallium nitride etching, such as Fig. 3
In shown in (c)；
(5) will be put into equipment of metal organic chemical vapor deposition after sample clean described in (4), successively growing high resistant
Gallium nitride layer (gallium nitride of unintentional doping), AlGaN potential barrier, in Fig. 3 shown in (d)；
(6) takes out sample described in (5) from the device, after cleaning, depositing Ti Au multilayer, and after photoetching, preparation source electricity
Pole degenerates 30 seconds for 800 degrees Celsius, prepares source Ohmic contact, later in Fig. 3 shown in (e)；
(7) is by after sample clean described in (6), depositing indium tin oxide, thickness 150nm, as p-type current extending；
(8) deposits CrAu, thickness is 100nm and 100nm respectively, as P ohm for after sample clean described in (7)
Contact, in Fig. 3 shown in (f)；
(9) after sample clean described in (8), will deposit NiAu, and thickness is 20nm and 300 nm respectively, as grid electricity
Pole, as shown in Figure 2.
As example, such as Fig. 4, for the time resolution luminosity curve of the present invention and conventional separators part.In Fig. 4, dotted line
To be of the invention as a result, solid line is conventional separators part as a result, ordinate is relative light intensity, abscissa is the time, and unit is
Nanosecond.The gallium nitride based LED construction of integrated amplifier avoids parasitic capacitance existing for discrete device circuit connection, inductance,
The electrode design portion in the chip of LED on-off will be controlled, the photoelectric respone time of luminescent device can be shortened, improve luminescent device
Whole response frequency improves the visible light communication rate based on gallium nitride based LED.
Diode structure produced above includes high electron mobility transistor current amplification circuit.The high electron mobility
Rate transistor current amplification circuit includes undoped gallium nitride insulating layer, aluminum gallium nitride barrier layer, source Ohmic electrode and gate electrode group
At.
Advanced optimize implementation ground, the GaN buffer layer is GaN nucleating layer and unintentional doped gan layer, wherein GaN at
Stratum nucleare is with a thickness of 10-100 nm, and unintentional doped gan layer is with a thickness of 100-4000 nm；The silicon of the N-type GaN conductive layer adulterates
Concentration 2 × 1018cm-3-2×1019cm-3；The multi-quantum well active region is periodic InGaN barrier layer and GaN potential well layer；P
The doping concentration 2 × 10 of magnesium in type conductive layer18cm-3-2×1020cm-3。
Claims (8)
1. the gallium nitride based light emitting diode structure of integrated amplifier, it is characterised in that at least successively include substrate, GaN under
A part of buffer layer, N-type GaN conductive layer, multi-quantum well active region, p-type gallium nitride conductive layer, current extending, P electrode；
Another part of GaN buffer layer is up successively arranged high resistant gallium nitride channel layer, AlGaN potential barrier；AlGaN potential barrier is equipped with
Source Ohmic electrode and gate electrode；The diode structure includes transistor current amplification circuit；Current amplification circuit is by the GaN
Buffer layer, AlGaN potential barrier, source Ohmic electrode and gate electrode composition；The multi-quantum well active region is periodically overlapping
InGaN barrier layer and GaN potential well layer.
2. the gallium nitride based light emitting diode structure of integrated amplifier according to claim 1, it is characterised in that electric current
Amplifying circuit is GaN/AlGaN hetero-junctions high electron mobility transistor composition.
3. the gallium nitride based light emitting diode structure of integrated amplifier according to claim 1, it is characterised in that described
Current amplification circuit is located at the N electrode region in conventional LED structure.
4. the gallium nitride based light emitting diode structure of integrated amplifier according to claim 2, it is characterised in that GaN/
The two-dimensional electron gas of AlGaN hetero-junctions and the N-type conductive layer of light emitting diode connect.
5. the gallium nitride based light emitting diode structure of integrated amplifier according to claim 1, it is characterised in that described
GaN buffer layer is GaN nucleating layer and unintentional doped gan layer, and wherein GaN nucleating layer is with a thickness of 10-100 nm, unintentional doping
GaN layer is with a thickness of 100-4000 nm.
6. the gallium nitride based light emitting diode structure of integrated amplifier according to claim 1, it is characterised in that the N
The doping concentration 2 × 10 of type GaN conductive layer18cm-3-2×1019cm-3。
7. according to the gallium nitride based light emitting diode structure of integrated amplifier described in claim 1, it is characterised in that the p-type
The doping concentration 2 × 10 of magnesium in gallium nitride conductive layer18cm-3-2×1020cm-3。
8. preparing the side of the described in any item gallium nitride based light emitting diode structures with integrated amplifier of claim 1 ~ 7
Method, it is characterised in that include the following steps:
(1) growing gallium nitride LED epitaxial wafer in (MOCVD) reaction chamber is deposited in Metallo-Organic Chemical Vapor according to a conventional method, from
Under at least successively include that substrate, undoped GaN buffer layer, N-type GaN conductive layer, multi-quantum well active region, p-type gallium nitride are conductive
Layer, silicon oxide mask layer；
(2) (1) final gained sample is taken out, deposits silica；
(3) (2) final gained sample by photoetching technique, is removed part of silica, retains the silica of masks area；
(4) sample obtained by (3) is put into inductively coupled plasma etching equipment and the position of removal part of silica is carried out
GaN etching, is etched to undoped GaN buffer layer；
(5) sample obtained by (4) is put into Metallo-Organic Chemical Vapor deposition (MOCVD) reaction chamber, the etching position in (4) is raw
The gallium nitride layer of long unintentional doping；
(6) AlGaN potential barrier is grown on the gallium nitride layer of the unintentional doping of the sample obtained by (5)；
(7) sample obtained by (6) is taken out into reaction chamber, depositing Ti Au, photoetching prepares source electrode ohm in AlGaN potential barrier and connects
Touching, and it is etched away silicon oxide mask layer；
(8) p-type current extending and P electrode Ohmic contact are prepared on the p-type gallium nitride conductive layer of the sample obtained by (7)；
(9) grid Schottky contacts are prepared in the AlGaN potential barrier on the sample obtained by (8).
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| CN106252373B (en) * | 2016-09-09 | 2019-12-03 | 复旦大学 | A kind of GaN base integrated device and preparation method thereof |
| CN106549031B (en) * | 2016-11-25 | 2019-12-03 | 复旦大学 | A kind of monolithic integrated device and preparation method thereof based on body GaN material |
| CN108847419A (en) * | 2018-07-10 | 2018-11-20 | 南方科技大学 | A kind of single-slice integrated semiconductor array device and preparation method thereof |
| CN110289281A (en) * | 2019-07-26 | 2019-09-27 | 山东大学 | A kind of upside-down mounting GaN base HEMT-LED integrated device and preparation method thereof |
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| CN101393958A (en) * | 2007-09-18 | 2009-03-25 | 丰田合成株式会社 | Group III nitride-based compound semiconductor light-emitting device |
| CN101562182A (en) * | 2008-04-02 | 2009-10-21 | 香港科技大学 | Integrated hemt and a combination, method as well as a system of a horizontal field effect rectifier |
| CN205984989U (en) * | 2016-06-03 | 2017-02-22 | 华南理工大学 | Gallium nitride emitting diode structure with amplifier |
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Patent Citations (4)
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|---|---|---|---|---|
| CN101064275A (en) * | 2006-04-28 | 2007-10-31 | 中国科学院半导体研究所 | Method for realizing RTD and HEMT single chip integration using dry etching technology |
| CN101393958A (en) * | 2007-09-18 | 2009-03-25 | 丰田合成株式会社 | Group III nitride-based compound semiconductor light-emitting device |
| CN101562182A (en) * | 2008-04-02 | 2009-10-21 | 香港科技大学 | Integrated hemt and a combination, method as well as a system of a horizontal field effect rectifier |
| CN205984989U (en) * | 2016-06-03 | 2017-02-22 | 华南理工大学 | Gallium nitride emitting diode structure with amplifier |
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