CN202749409U - Gallium nitride light emitting diode capable of enhancing electrode adhesive force - Google Patents
Gallium nitride light emitting diode capable of enhancing electrode adhesive force Download PDFInfo
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- CN202749409U CN202749409U CN 201220398109 CN201220398109U CN202749409U CN 202749409 U CN202749409 U CN 202749409U CN 201220398109 CN201220398109 CN 201220398109 CN 201220398109 U CN201220398109 U CN 201220398109U CN 202749409 U CN202749409 U CN 202749409U
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Abstract
The utility model discloses a gallium nitride light emitting diode capable of enhancing electrode adhesive force, which comprises a substrate, and a N-GaN (Gallium Nitride) layer, a light emitting layer and a P-GaN layer which are sequentially arranged on the substrate, wherein a current blocking layer is formed on the P-GaN layer, and the current blocking layer is provided with a first opening exposing the P-GaN layer; a current diffusion layer is formed on the P-GaN layer and part of the current blocking layer, and a second opening exposing part of the current blocking layer and the P-GaN layer is formed on the current diffusion layer; an electrode P is formed on the first opening and the second opening; and an electrode N is arranged on the exposed part of N-GaN layer. The light emitting diode has the advantages that the current blocking layer can be prevented from being in contact with the P-GaN layer, and the contact of the current diffusion layer with the material of the electrode P is largely reduced; and the characteristics of excellent adhesion between the current blocking layer and the P-GaN layer as well as between the material of the electrode P and the P-GaN layer are fully utilized, so that the ratio of products of which the electrodes fall is reduced, and the qualified rate of the products is improved.
Description
Technical field
The utility model relates to a kind of light-emitting diode, more specifically, relates to a kind of gallium nitride based light emitting diode of intensifier electrode adhesive force.
Background technology
Light-emitting diode (English is Light Emitting Diode, be called for short LED) is a kind of of semiconductor diode, and it can be luminous energy with electric energy conversion, sends Huang, versicolor visible light and the infrared and ultraviolet invisible light such as green, blue.Compare with small filament lamp bubble and neon lamp, it has operating voltage and electric current is low, reliability is high, the life-span is long and the advantage such as conveniently adjusted luminosity.Wherein, III-V compounds of group take gallium nitride (GaN) as representative is owing to having band gap length, the characteristics such as luminous efficiency is high, the electronics saturation drift velocity is high, stable chemical nature, in field of optoelectronic devices such as high brightness blue light-emitting diode, blue lasers huge application potential is arranged, caused people's extensive concern.
GaN base LED is a kind of electroluminescent device, thereby need to make electrode on the luminescent material surface, comes driving LED luminous from the electrode injection electric current.The shared size of electrode has a great impact the photoelectric properties of LED, and electrode area is larger on the one hand, and it is easier that electric current injects, and CURRENT DISTRIBUTION can be accomplished more even, and operating voltage also can decrease; Electrode generally all is light absorbent on the other hand, and the larger shading light face of its area is also just larger, and this just causes the electric light transformation efficiency to descend.In order to solve this contradiction, industry has proposed to make at LED the method for current barrier layer (the English Current Blocking Layer of being), namely the position of certain depth making insulating material stops this regional electric current to pass through under the distance electrode, reduce the electrode shading under the electrode, thereby improved the electric light transformation efficiency of LED.The material of described current barrier layer is selected silicon dioxide (SiO2) or silicon nitride (Si3N4) usually.In addition, because the conductivity of the gallium nitride that the P type mixes is smaller, light-emitting diode also is provided with current-diffusion layer (the English Current Spreading Layer of being) usually, and described current-diffusion layer is positioned at P type gallium nitride layer top, helps to improve conductivity.The material of described current-diffusion layer is selected tin indium oxide (ITO) usually.
As shown in Figure 1, existing a kind of light-emitting diode comprises: substrate 100; Be positioned at successively N-GaN layer 101, luminescent layer 102, P-GaN layer 103 and current-diffusion layer 104 on the described substrate 100; Be formed at the current barrier layer 105 of described current-diffusion layer 104 tops; Be coated on the P electrode 106 on the described current barrier layer 105, and be positioned at the N electrode 107 on the barish N-GaN layer 101.Described current-diffusion layer 104 is covered in the whole surface of P-GaN layer 103.
As shown in Figure 2, existing another kind of light-emitting diode comprises: substrate 200; Be positioned at successively N-GaN layer 201, luminescent layer 202, P-GaN layer 203 on the described substrate 200; Be formed at the current barrier layer 205 on the described P-GaN layer 203; Be formed at the current-diffusion layer 204 on described P-GaN layer 203 and the current barrier layer 205; Be positioned at the P electrode 206 on the described current-diffusion layer 204, described P electrode 206 is corresponding with the position of current barrier layer 205; And be positioned at N electrode 207 on the barish N-GaN layer 201.
From the above, in the existing Light-Emitting Diode, a kind of is as shown in Figure 1, and current barrier layer is between described P electrode and current-diffusion layer, and namely current-diffusion layer directly contacts with the P-GaN layer; Another kind is as shown in Figure 2, forms first current barrier layer, and then forms current-diffusion layer and P electrode, and namely the P electrode directly contacts with current-diffusion layer.Known, the adhesiveness of current-diffusion layer and P-GaN layer and P electrode material is relatively poor, because these characteristics cause being prone to the rete break-off between current-diffusion layer and P-GaN layer or the P electrode material, has affected the yield of product.
Summary of the invention
The purpose of this utility model namely is to improve the above-mentioned limitation of prior art, and a kind of gallium nitride based light emitting diode of intensifier electrode adhesive force is provided.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of gallium nitride based light emitting diode of intensifier electrode adhesive force comprises: substrate; Be positioned at successively N-GaN layer, luminescent layer, P-GaN layer on the described substrate; Be formed at the current barrier layer on the described P-GaN layer, described current barrier layer has the first opening that exposes described P-GaN layer; Be formed at the current-diffusion layer that reaches on the described P-GaN layer on the part current barrier layer, described current-diffusion layer exposes the second opening that reaches described P-GaN layer on the part current barrier layer; Be formed at the P electrode on the first opening and the second opening; And be positioned at N electrode on the barish N-GaN layer.
Preferably, in described light-emitting diode, described the second aperture efficiency the first aperture area is large;
Preferably, in described light-emitting diode, described current-diffusion layer extends to the subregion on described current barrier layer surface;
Preferably, in described light-emitting diode, described current barrier layer only covers the subregion on described P-GaN layer surface;
Preferably, in described light-emitting diode, described substrate is sapphire or carborundum or gallium nitride or zinc oxide or magnesium oxide.
Preferably, in described light-emitting diode, described current barrier layer is silicon dioxide or silicon nitride or aluminium oxide;
Preferably, in described light-emitting diode, described current-diffusion layer is tin indium oxide, zinc oxide or nickel oxide;
Preferably, in described light-emitting diode, described P electrode and N electrode are chromium platinum alloy, nickel billon, titanium-aluminium alloy or titanium alloy.
The utility model is by forming the first opening that exposes the P-GaN layer in current barrier layer, and expose the second opening of part current barrier layer and described P-GaN layer by in current-diffusion layer, forming, thereby can be so that follow-up P electrode be filled on current barrier layer the first opening and the second opening.Can avoid like this current-diffusion layer to contact with the P-GaN layer, greatly reduced contacting of current-diffusion layer and P electrode material, take full advantage of the good characteristic of tack between current barrier layer and P-GaN layer and P electrode material and the P-GaN layer, and then the ratio of minimizing power down utmost point product, the yield of improving product.
Description of drawings
Accompanying drawing is used to provide further understanding of the present utility model, and consists of the part of specification, is used from explanation the utility model with embodiment one of the present utility model, does not consist of restriction of the present utility model.In addition, the accompanying drawing data are to describe summary, are not to draw in proportion.
Fig. 1 is the generalized section of existing a kind of light-emitting diode.
Fig. 2 is the generalized section of existing another kind of light-emitting diode.
Fig. 3 is the generalized section of the gallium nitride based light emitting diode of a kind of intensifier electrode adhesive force of implementing of the utility model.
Parts symbol description among the figure:
100,200,300: substrate; 101,201,301:N-GaN layer; 102,202,302: luminescent layer; 103,203,303:P-GaN layer; 104,204,304: current-diffusion layer; 105,205,305: current barrier layer; 106,206,306:P electrode; 107,207,307:N electrode.
Embodiment
Describe execution mode of the present utility model in detail below with reference to drawings and Examples, how the application technology means solve technical problem to the utility model whereby, and the implementation procedure of reaching technique effect can fully understand and implements according to this.
As shown in Figure 3, the light-emitting diode of the present embodiment is gallium nitrate based blue light diode, described light-emitting diode comprises: substrate 300, described substrate 300 is Sapphire Substrate in the present embodiment, yet will be appreciated that, the material of described substrate 300 can also be carborundum (SiC), gallium nitride (GaN), zinc oxide (ZnO), magnesium oxide (MgO) or silicon chip (Si); Be positioned at successively N-GaN layer 301, luminescent layer 302, P-GaN layer 303 on the substrate 300; Described luminescent layer 302 comprises the multiple quantum well light emitting layer, and the material of described multiple quantum well light emitting layer is indium gallium nitride (InGaN); Be formed in the current barrier layer 305 on the described P-GaN layer 303, described current barrier layer 305 has the first opening that exposes described P-GaN layer 303; Be formed at the current-diffusion layer 304 that reaches on the described P-GaN layer 303 on the part current barrier layer 305, described current-diffusion layer 304 exposes the second opening that reaches described P-GaN layer 303 on the part current barrier layer 305; Be formed at the P electrode 306 on the first opening and the second opening; And be positioned at N electrode 307 on the barish N-GaN layer 301.
Wherein, described N-GaN layer 301 is electrically connected with power cathode by N electrode 307, described P-GaN layer 303 is electrically connected with positive source by P electrode 306, P electrode 306 and N electrode 307 preferably form in a step process simultaneously, and its material is chromium platinum alloy (Cr/Pt/Au), nickel billon (Ni/Au), titanium alloy (Ti/Au) or titanium-aluminium alloy (Ti/Al).
In the present embodiment, the second aperture efficiency the first aperture area is large; Described current-diffusion layer 304 extends to the subregion on described current barrier layer 305 surfaces; Described current barrier layer 305 only covers the subregion on described P-GaN layer 303 surface.The material of described current barrier layer 305 is silicon dioxide (SiO2) or silicon nitride (Si3N4) or aluminium oxide (Al2O3), and the material of described current-diffusion layer 304 is tin indium oxide (ITO), zinc oxide (ZnO) or nickel oxide (NiO).
By in current barrier layer 305, forming the first opening that exposes P-GaN layer 303, and by in current-diffusion layer 304, forming the second opening expose part current barrier layer 305 and described P-GaN layer 303, thereby can be so that follow-up P electrode 306 be filled on current barrier layer the first opening and the second opening.Can avoid like this current-diffusion layer to contact with the P-GaN layer, greatly reduced contacting of current-diffusion layer and P electrode material, take full advantage of the good characteristic of tack between current barrier layer and P-GaN layer and P electrode material and the P-GaN layer, and then the ratio of minimizing power down utmost point product, the yield of improving product.
Clearly, explanation of the present utility model should not be construed as and is limited only within above-described embodiment, but comprises the whole execution modes that utilize the utility model design.
Claims (9)
1. the gallium nitride based light emitting diode of intensifier electrode adhesive force comprises substrate;
Be positioned at successively N-GaN layer, luminescent layer, P-GaN layer on the described substrate;
Be formed at the current barrier layer on the described P-GaN layer, described current barrier layer has the first opening that exposes described P-GaN layer;
Be formed at the current-diffusion layer that reaches on the described P-GaN layer on the part current barrier layer, described current-diffusion layer exposes the second opening that reaches described P-GaN layer on the part current barrier layer.
2. the gallium nitride based light emitting diode of intensifier electrode adhesive force according to claim 1 is characterized in that: also comprise the P electrode that is formed on the first opening and the second opening; And be positioned at N electrode on the barish N-GaN layer.
3. the gallium nitride based light emitting diode of intensifier electrode adhesive force according to claim 1, it is characterized in that: described the second aperture efficiency the first aperture area is large.
4. the gallium nitride based light emitting diode of intensifier electrode adhesive force according to claim 1, it is characterized in that: described current-diffusion layer extends to the subregion on described current barrier layer surface.
5. the gallium nitride based light emitting diode of intensifier electrode adhesive force according to claim 1, it is characterized in that: described current barrier layer only covers the subregion on described P-GaN layer surface.
6. the gallium nitride based light emitting diode of intensifier electrode adhesive force according to claim 1, it is characterized in that: described substrate is sapphire or carborundum or gallium nitride or zinc oxide or magnesium oxide or silicon chip.
7. the gallium nitride based light emitting diode of intensifier electrode adhesive force according to claim 1, described current barrier layer is silicon dioxide or silicon nitride or aluminium oxide.
8. the gallium nitride based light emitting diode of intensifier electrode adhesive force according to claim 1, described current-diffusion layer is tin indium oxide, zinc oxide or nickel oxide.
9. the gallium nitride based light emitting diode of intensifier electrode adhesive force according to claim 1, described P electrode and N electrode are chromium platinum alloy, nickel billon, titanium-aluminium alloy or titanium alloy.
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| CN 201220398109 CN202749409U (en) | 2012-08-13 | 2012-08-13 | Gallium nitride light emitting diode capable of enhancing electrode adhesive force |
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| CN 201220398109 CN202749409U (en) | 2012-08-13 | 2012-08-13 | Gallium nitride light emitting diode capable of enhancing electrode adhesive force |
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Cited By (6)
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| CN105720155A (en) * | 2016-02-03 | 2016-06-29 | 华灿光电(苏州）有限公司 | Light emitting diode (LED) and manufacturing method therefor |
| CN105895764A (en) * | 2015-02-17 | 2016-08-24 | 新世纪光电股份有限公司 | Light-Emitting Diode Chip |
| CN106531853A (en) * | 2016-12-01 | 2017-03-22 | 东莞市佳乾新材料科技有限公司 | High-performance LED chip and manufacturing method thereof |
| CN106784176A (en) * | 2016-11-30 | 2017-05-31 | 东莞市佳乾新材料科技有限公司 | A kind of luminous efficiency LED chip high and preparation method thereof |
| CN109326686A (en) * | 2018-09-12 | 2019-02-12 | 聚灿光电科技（宿迁）有限公司 | A kind of production method of upside-down mounting LED chip |
| CN110085718A (en) * | 2014-07-01 | 2019-08-02 | 首尔伟傲世有限公司 | Light emitting device |
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2012
- 2012-08-13 CN CN 201220398109 patent/CN202749409U/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110085718A (en) * | 2014-07-01 | 2019-08-02 | 首尔伟傲世有限公司 | Light emitting device |
| CN105895764A (en) * | 2015-02-17 | 2016-08-24 | 新世纪光电股份有限公司 | Light-Emitting Diode Chip |
| CN105720155A (en) * | 2016-02-03 | 2016-06-29 | 华灿光电(苏州）有限公司 | Light emitting diode (LED) and manufacturing method therefor |
| CN105720155B (en) * | 2016-02-03 | 2018-07-31 | 华灿光电(苏州）有限公司 | A kind of Light-emitting diode LED and preparation method thereof |
| CN106784176A (en) * | 2016-11-30 | 2017-05-31 | 东莞市佳乾新材料科技有限公司 | A kind of luminous efficiency LED chip high and preparation method thereof |
| CN106784176B (en) * | 2016-11-30 | 2019-01-29 | 广州市奥彩光电科技有限公司 | A kind of LED chip and preparation method thereof that luminous efficiency is high |
| CN106531853A (en) * | 2016-12-01 | 2017-03-22 | 东莞市佳乾新材料科技有限公司 | High-performance LED chip and manufacturing method thereof |
| CN106531853B (en) * | 2016-12-01 | 2019-03-08 | 潘素娇 | A kind of high performance lED chip and preparation method thereof |
| CN109326686A (en) * | 2018-09-12 | 2019-02-12 | 聚灿光电科技（宿迁）有限公司 | A kind of production method of upside-down mounting LED chip |
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Granted publication date: 20130220 |