CN105720155B - A kind of Light-emitting diode LED and preparation method thereof - Google Patents
A kind of Light-emitting diode LED and preparation method thereof Download PDFInfo
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- CN105720155B CN105720155B CN201610073410.8A CN201610073410A CN105720155B CN 105720155 B CN105720155 B CN 105720155B CN 201610073410 A CN201610073410 A CN 201610073410A CN 105720155 B CN105720155 B CN 105720155B
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- 238000002360 preparation method Methods 0.000 title abstract description 4
- 230000004888 barrier function Effects 0.000 claims abstract description 68
- 238000002161 passivation Methods 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000001259 photo etching Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000002776 aggregation Effects 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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Abstract
The invention discloses a kind of light emitting diodes and preparation method thereof, belong to technical field of semiconductors.The light emitting diode includes substrate, N-type layer, luminescent layer, P-type layer, the groove for extending to N-type layer is offered in P-type layer, the first current barrier layer is laminated in P-type layer, first transparency conducting layer, and passivation layer, the first through hole for extending to P-type layer is equipped in passivation layer, and extend to the second through-hole of the first transparency conducting layer, p-type pad is arranged in first through hole, P-type electrode line is arranged in the second through-hole, the second current barrier layer is laminated in N-type layer, second transparency conducting layer, N-type pad and N-type electrode line, the third through-hole for extending to N-type layer is equipped in second current barrier layer and the second transparency conducting layer along the extending direction of N-type electrode line, N-type pad and N-type electrode line form Ohmic contact by third through-hole and N-type layer.The present invention improves the light emission luminance of LED, and the voltage of LED reduces.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of Light-emitting diode LED and preparation method thereof.
Background technology
As the rise of third generation semiconductor technology and continuous maturation, semiconductor lighting are small with energy consumption, pollution-free, highlighted
The advantages such as degree, long-life, become focus of people's attention, have also driven flourishing for entire industry upper, middle and lower reaches industry.Its
In, the manufacture of semiconductor light-emitting-diode (Light Emitting Diode, abbreviation LED) is one of core technology, is constantly carried
The light emission luminance of high LED is the target pursued from beginning to end.
Existing LED includes substrate and stacks gradually N-type layer on substrate, luminescent layer, P-type layer, current blocking
Layer, transparency conducting layer, passivation layer, the groove that N-type layer is extended to from P-type layer is offered in P-type layer, and P-type layer is equipped with and wears successively
Overcurrent barrier layer, transparency conducting layer, passivation layer P-type electrode, N-type layer be equipped with across passivation layer N-type electrode.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems：
In order to which N-type electrode to be arranged in N-type layer, the area that the groove of N-type layer is extended to from P-type layer is larger so that setting
The area of luminescent layer between P-type layer and N-type layer is smaller, leads to that the light emission luminance of LED is low, voltage is high.
Invention content
In order to solve the problems, such as that prior art light emission luminance is low, an embodiment of the present invention provides a kind of light emitting diode and its
Production method.The technical solution is as follows：
On the one hand, an embodiment of the present invention provides a kind of light emitting diode, the light emitting diode includes substrate, Yi Jiyi
The secondary N-type layer being layered on the substrate, luminescent layer, P-type layer, offer in the P-type layer extended to from the P-type layer it is described
The groove of N-type layer is sequentially laminated with the first current barrier layer, the first transparency conducting layer in the P-type layer and extends to described
Passivation layer in groove, the passivation layer is interior to be equipped with the first through hole for extending to the P-type layer and extends to described first thoroughly
Second through-hole of bright conductive layer, p-type pad are arranged in the first through hole, and P-type electrode line is arranged in second through-hole,
It is laminated with the second current barrier layer, the second transparency conducting layer and N-type pad and N-type electrode line in the N-type layer, described
It is equipped with described in several extend to along the extending direction of the N-type electrode line in two current barrier layers and second transparency conducting layer
The third through-hole of N-type layer, the N-type pad and the N-type electrode line form ohm by the third through-hole and the N-type layer
Contact.
Optionally, second current barrier layer includes several units detached by the third through-hole, the unit
Shape is one or more in circle, annular, triangle, pentalpha.
Preferably, spacing of the unit between the length and the unit of the extending direction of the N-type electrode line it
Than being 1/4~3/4.
Optionally, second current barrier layer and described second is laminated between the N-type pad and the N-type layer thoroughly
Bright conductive layer.
On the other hand, an embodiment of the present invention provides a kind of production method of light emitting diode, the production method includes：
N-type layer, luminescent layer, P-type layer are sequentially formed on substrate；
The groove that the N-type layer is extended to from the P-type layer is opened up in the P-type layer；
The first current barrier layer is formed in the P-type layer, and the second current barrier layer is formed in the N-type layer, it is described
Multiple third through-holes for extending to the N-type layer are equipped in second current barrier layer；
The first transparency conducting layer is formed in the P-type layer and on first current barrier layer, in second electricity
The second transparency conducting layer is formed on flow barrier；
The passivation layer extended in the groove is formed on first transparency conducting layer, is equipped with and is prolonged in the passivation layer
It reaches the first through hole of the P-type layer and extends to the second through-hole of first transparency conducting layer；
P-type pad is set in the first through hole, P-type electrode line is set in second through-hole, in the third
N-type pad is set in through-hole, N-type electrode line is set in the third through-hole and on second transparency conducting layer.
Optionally, second current barrier layer includes several units detached by the third through-hole, the unit
Shape is one or more in circle, annular, triangle, pentalpha.
Preferably, spacing of the unit between the length and the unit of the extending direction of the N-type electrode line it
Than being 1/4~3/4.
Optionally, second current barrier layer and described second is laminated between the N-type pad and the N-type layer thoroughly
Bright conductive layer.
Optionally, the formation on first transparency conducting layer extends to the passivation layer in the groove, described blunt
Change to be equipped in layer and extend to the first through hole of the P-type layer and extend to the second through-hole of first transparency conducting layer, wraps
It includes：
One layer of passivation layer is laid on first transparency conducting layer and second transparency conducting layer；
The photoresist of setting figure is formed on the passivation layer using photoetching process；
The passivation layer is performed etching using the photoresist of the setting figure, is formed and is extended in the passivation layer
The first through hole of the P-type layer and the second through-hole for extending to first transparency conducting layer.
Preferably, described that p-type pad is set in the first through hole, P-type electrode line is set in second through-hole,
N-type pad is set in the third through-hole, in the third through-hole and N-type electrode is set on second transparency conducting layer
Line, including：
Electrode is formed in the first through hole, in the second through-hole, in third through-hole and on the photoresist；
The photoresist is removed, the p-type pad, the P-type electrode line, the N-type pad and the N-type are obtained
Electrode wires.
The advantageous effect that technical solution provided in an embodiment of the present invention is brought is：
By the way that the second current barrier layer, the second transparency conducting layer and N-type pad and N-type electrode are laminated in N-type layer
In line, the second current barrier layer and the second transparency conducting layer several N-type layers that extend to are equipped with along the extending direction of N-type electrode line
Third through-hole, N-type pad and N-type electrode line form Ohmic contact, the electric current of N-type pad access by third through-hole and N-type layer
Entered respectively by the N-type electrode line in each through-hole, the aggregation of electric current subregion is conducive to the diffusion of electric current, improves LED's
Light emission luminance, while parallel circuit is formed between the electric current of each region, reduce the voltage of LED.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of structural schematic diagram for light emitting diode that the embodiment of the present invention one provides；
Fig. 2 is the structural schematic diagram for the electrode that the embodiment of the present invention one provides；
Fig. 3 is the structural schematic diagram for the N-type electrode line that the embodiment of the present invention one provides；
Fig. 4 is a kind of flow chart of the production method of light emitting diode provided by Embodiment 2 of the present invention；
Fig. 5 a- Fig. 5 f are the structural schematic diagrams in the manufacturing process of light emitting diode provided by Embodiment 2 of the present invention.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
An embodiment of the present invention provides a kind of light emitting diodes, are suitable for single of formal dress, the series-parallel LED chip of formal dress,
Referring to Fig. 1, which includes substrate 1 and the N-type layer being sequentially laminated on substrate 12, luminescent layer 3, P-type layer 4, P
The groove 10 that N-type layer 2 is extended to from P-type layer 4 is offered on type layer 4, be sequentially laminated in P-type layer 4 first current barrier layer 5a,
First transparency conducting layer 6a and passivation layer 7 in groove 10 is extended to, is equipped in passivation layer 7 and extends to the first of P-type layer 4
Through-hole (not shown) and the second through-hole 20b for extending to the first transparency conducting layer 6a, p-type pad 8aa are set (see Fig. 2)
It sets in first through hole, P-type electrode line 8ab is arranged in the second through-hole 20b, and the second current barrier layer is laminated in N-type layer 2
5b, the second transparency conducting layer 6b and N-type pad 8ba and N-type electrode line 8bb, referring to Fig. 3, the second current barrier layer 5b and
In two transparency conducting layer 6b several third through-holes for extending to N-type layer 4, N-type weldering are equipped with along the extending direction of N-type electrode line 8bb
Disk 8ba and N-type electrode line 8bb forms Ohmic contact by third through-hole and N-type layer 4.
Referring to Fig. 2, Ohmic contact between p-type pad 8aa and P-type electrode line 8ab, P-type electrode line 8ab is along perpendicular to luminous
The direction of growth of diode extends；Ohmic contact between N-type pad 8ba and N-type electrode line 8bb, N-type electrode line 8bb is along vertical
Extend in the direction of growth of light emitting diode.It is readily apparent that, Fig. 1 is the sectional view in the directions A-A in Fig. 2, and Fig. 3 is the side B-B in Fig. 2
To sectional view.
In the present embodiment, substrate 1 can be Sapphire Substrate, and N-type layer 2 can be N-type GaN layer, and luminescent layer 3 can be
The InGaN layer and GaN layer being alternatively formed, P-type layer 4 can be p-type GaN layer.
Optionally, the second current barrier layer 5b and the second transparency conducting layer are laminated between N-type pad 8ba and N-type layer 4
6b。
Optionally, include several unit 5ba detached by third through-hole referring to Fig. 3, the second current barrier layer 5b, unit
Shape can be one or more in circle, annular, triangle, pentalpha.
Preferably, the ratio between the spacing of unit between the length and unit of the extending direction of N-type electrode line 8bb can be 1/
4~3/4, such as 1/2.It is demonstrated experimentally that spacing the ratio between of the unit between the length and unit of the extending direction of N-type electrode line 8bb
Brightness and voltage performance are optimal when being 1/2.
Optionally, the material of the second current barrier layer 5b and the first current barrier layer 5a can be all made of SiO2, SiON or
Person SiN, to reach preferable insulation effect, and using versatile material in the industry, at low cost.
Optionally, the material of the second transparency conducting layer 6b and the first transparency conducting layer 6a can be all made of tin indium oxide
(Indium Tin Oxides, abbreviation ITO) or NiAu.Using versatile material in the industry, at low cost.
Optionally, the material of passivation layer 7 can be all made of SiO2Or SiON.
Optionally, p-type pad 8aa, P-type electrode line 8ab, N-type pad 8ba, N-type electrode line 8bb material can adopt
Use Ni/Al/Cr/Ni/Au.
The embodiment of the present invention is welded by the way that the second current barrier layer, the second transparency conducting layer and N-type are laminated in N-type layer
In disk and N-type electrode line, the second current barrier layer and the second transparency conducting layer several prolong is equipped with along the extending direction of N-type electrode line
It reaches the third through-hole of N-type layer, N-type pad and N-type electrode line and Ohmic contact, N-type pad is formed by third through-hole and N-type layer
The electric current of access is entered by the N-type electrode line in each through-hole respectively, and the aggregation of electric current subregion is conducive to the diffusion of electric current,
The light emission luminance of LED is improved, while forming parallel circuit between the electric current of each region, reduces the voltage of LED.
Embodiment two
An embodiment of the present invention provides a kind of production methods of light emitting diode, are suitable for making the hair of the offer of embodiment one
Optical diode, referring to Fig. 4, this method includes：
Step 201：N-type layer, luminescent layer, P-type layer are sequentially formed on substrate.
Fig. 5 a are the structural schematic diagram of the light emitting diode after step 201 executes.Wherein, 1 is substrate, and 2 be N-type layer, 3
It is P-type layer for luminescent layer, 4.
Specifically, substrate can be Sapphire Substrate, and N-type layer can be N-type GaN layer, and luminescent layer can be alternating growth
InGaN layer and GaN layer, P-type layer can be p-type GaN layer.
Optionally, which may include：
Using metallo-organic compound chemical gaseous phase deposition (Metal-organic Chemical Vapor
Deposition, abbreviation MOCVD) technology sequentially forms N-type layer, luminescent layer and P-type layer on substrate.
Preferably, before step 201, this method can also include：
At least one layer of buffer layer is formed on substrate；
N-type layer, luminescent layer and P-type layer are sequentially formed on the buffer layer.
It is to be appreciated that being initially formed buffer layer between substrate and N-type layer, be conducive to N-type layer, luminescent layer and P-type layer
Growth improves crystal quality.
Step 202：The groove that N-type layer is extended to from P-type layer is opened up in P-type layer.
Fig. 5 b are the structural schematic diagram of the light emitting diode after step 202 executes.Wherein, 1 is substrate, and 2 be N-type layer, 3
It is P-type layer for luminescent layer, 4,10 be groove.
Optionally, which may include：
A layer photoresist is formed in P-type layer；
Part photoresist is dissolved using photoetching process；
Under the protection of photoresist, using inductively coupled plasma (Inductively Coupled Plasma, abbreviation
ICP) etching technics opens up the groove that N-type layer is extended to from P-type layer in P-type layer；
Stripping photoresist is simultaneously cleaned.
Preferably, before step 202, this method can also include：
Clean light emitting diode.
Step 203：The first current barrier layer is formed in P-type layer, forms the second current barrier layer in N-type layer, second
Multiple third through-holes for extending to N-type layer are equipped in current barrier layer.
Fig. 5 c are the structural schematic diagram of the light emitting diode after step 203 executes.Wherein, 1 is substrate, and 2 be N-type layer, 3
It is P-type layer for luminescent layer, 4,10 be groove, and 5a is the first current barrier layer, and 5b is the second current barrier layer.
Optionally, the material of the second current barrier layer and the first current barrier layer can be all made of SiO2, SiON or
SiN。
Optionally, the second current barrier layer includes several units detached by third through-hole, and the shape of unit can be circle
It is one or more in shape, annular, triangle, pentalpha.
Preferably, the ratio between the spacing of unit between the length and unit of the extending direction of N-type electrode line 8bb can be 1/
4~3/4.
Optionally, which may include：
Using plasma enhances chemical vapour deposition technique (Plasma Enhanced Chemical Vapor
Deposition, abbreviation PECVD) in P-type layer and N-type layer form current barrier layer；
A layer photoresist is formed in current barrier layer；
Part photoresist is dissolved using photoetching process；
Under the protection of photoresist, using wet etch techniques corrosion current barrier layer, obtain the first current barrier layer and
The second current barrier layer；
Stripping photoresist is simultaneously cleaned.
Step 204：The first transparency conducting layer is formed in P-type layer and on the first current barrier layer, is hindered in the second electric current
The second transparency conducting layer is formed in barrier.
Fig. 5 d are the structural schematic diagram of the light emitting diode after step 204 executes.Wherein, 1 is substrate, and 2 be N-type layer, 3
It is P-type layer for luminescent layer, 4,10 be groove, and 5a is the first current barrier layer, and 5b is the second current barrier layer, and 6a is first transparent
Conductive layer, 6b are the second transparency conducting layer.
Optionally, the material of the second transparency conducting layer and the first transparency conducting layer can be all made of ITO or NiAu.
Optionally, which may include：
Using magnetron sputtering technique or electron beam evaporation technique in P-type layer, on the first current barrier layer, the second electric current
Transparency conducting layer is deposited on barrier layer and in N-type layer；
A layer photoresist is formed over transparent conductive layer；
Part photoresist is dissolved using photoetching process；
Under the protection of photoresist, using wet etch techniques corrode transparency conducting layer, obtain the first transparency conducting layer and
Second transparency conducting layer；
Stripping photoresist is simultaneously cleaned.
Preferably, after step 204, this method can also include：
Using rapid thermal annealing (rapid thermal annealing, abbreviation RAT) technology or oxygen in the lehr
High annealing is carried out in atmosphere, makes to form good Ohmic contact between the first transparency conducting layer and P-type layer.
Preferably, after step 204, this method can also include：
Clean light emitting diode.
Step 205：The passivation layer extended in groove is formed on the first transparency conducting layer, is equipped with and is extended in passivation layer
The first through hole of P-type layer and the second through-hole for extending to the first transparency conducting layer.
Fig. 5 e are the structural schematic diagram of the light emitting diode after step 205 executes.Wherein, 1 is substrate, and 2 be N-type layer, 3
It is P-type layer for luminescent layer, 4,10 be groove, and 5a is the first current barrier layer, and 5b is the second current barrier layer, and 6a is first transparent
Conductive layer, 6b are the second transparency conducting layer, and 7 be passivation layer, and 20b is the second through-hole.
Optionally, the material of passivation layer can be all made of SiO2Or SiON.
Optionally, which may include：
One layer of passivation layer is deposited on the first transparency conducting layer and the second transparency conducting layer using PECVD；
Form the photoresist of setting figure on the passivation layer using photoetching process；
Passivation layer is performed etching using the photoresist of setting figure, is formed in passivation layer and extends to the first of P-type layer
Through-hole and the second through-hole for extending to the first transparency conducting layer.
Step 206：P-type pad is set in first through hole, P-type electrode line is set in the second through-hole, in third through-hole
N-type electrode line is arranged in interior setting N-type pad in third through-hole and on the second transparency conducting layer.
Fig. 5 f are the structural schematic diagram of the light emitting diode after step 206 executes.Wherein, 1 is substrate, and 2 be N-type layer, 3
It is P-type layer for luminescent layer, 4,10 be the second groove, and 5a is the first current barrier layer, and 5b is the second current barrier layer, 6a first
Transparency conducting layer, 6b are the second transparency conducting layer, and 7 be passivation layer, and 20b is the second through-hole, and 8ab is P-type electrode line, and 8ba is N-type
Pad, 8bb are N-type electrode line.
Optionally, p-type pad, P-type electrode line, N-type pad, N-type electrode line material can be all made of Ni/Al/Cr/
Ni/Au。
Optionally, which may include：
Electrode is formed in first through hole, in the second through-hole, in third through-hole and on photoresist；
Stripping photoresist obtains p-type pad, P-type electrode line, N-type pad and N-type electrode line.
Optionally, after step 206, this method can also include：
High annealing is carried out using furnace anneal technology, makes P-type electrode line and the first transparency conducting layer, p-type pad and p-type
Good Ohmic contact between layer, N-type electrode line and N-type pad and N-type layer.
It is experimentally confirmed that when the material of the second current barrier layer of selection and the first current barrier layer uses SiO2, it is second transparent
The material of conductive layer and the first transparency conducting layer deposits transparency conducting layer using ITO, using magnetron sputtering technique, using RAT skills
Art carries out high annealing, the material of passivation layer uses SiO2When, single LED chip light emitting of manufactured 10mil × 30mil is equal
It is even, and all aspects of the parameters such as chip voltage, electric leakage, antistatic property, backward voltage, cut-in voltage show it is excellent, shine
Intensity improves 5%, and voltage reduces 0.03V, and the comprehensive yield of production reaches 93.56% in the piece obtained from side figure.
When select the material of the second current barrier layer and the first current barrier layer using SiN, the second transparency conducting layer and the
The material of one transparency conducting layer deposits transparency conducting layer, the middle oxygen in annealing furnace using NiAu, using electron beam evaporation technique
When carrying out the material of high annealing, passivation layer in atmosphere using SiON, single LED chip light emitting of manufactured 25mil × 25mil
Uniformly, and all aspects of the parameters such as chip voltage, electric leakage, antistatic property, backward voltage, cut-in voltage show excellent, hair
Luminous intensity improves 4.6%, and voltage reduces 0.05V, and the comprehensive yield of production reaches 91.6% in the piece obtained from side figure
The embodiment of the present invention is welded by the way that the second current barrier layer, the second transparency conducting layer and N-type are laminated in N-type layer
In disk and N-type electrode line, the second current barrier layer and the second transparency conducting layer several prolong is equipped with along the extending direction of N-type electrode line
It reaches the third through-hole of N-type layer, N-type pad and N-type electrode line and Ohmic contact, N-type pad is formed by third through-hole and N-type layer
The electric current of access is entered by the N-type electrode line in each through-hole respectively, and the aggregation of electric current subregion is conducive to the diffusion of electric current,
The light emission luminance of LED is improved, while forming parallel circuit between the electric current of each region, reduces the voltage of LED.In addition,
Successively using photoetching process forms the electrode of required shape, passivation layer is compared, the present embodiment is first formed using photoetching process required
The passivation layer of shape, then by removing the photoresist used in the passivation layer for etching required shape, form the electrode of required shape, section
One of photoetching process has been saved, the production cycle is shortened, reduction grows into cost.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of light emitting diode, the light emitting diode include substrate and stack gradually N-type layer over the substrate,
Luminescent layer, P-type layer, offer the groove that the N-type layer is extended to from the P-type layer in the P-type layer, in the P-type layer according to
It is secondary to be laminated with the first current barrier layer, the first transparency conducting layer and extend to passivation layer in the groove, the passivation layer
Interior be equipped with extends to the first through hole of the P-type layer and extends to the second through-hole of first transparency conducting layer, and p-type is welded
Disk is arranged in the first through hole, and P-type electrode line is arranged in second through-hole, which is characterized in that the N-type layer upper layer
Be laminated with the second current barrier layer, the second transparency conducting layer and N-type pad and N-type electrode line, second current barrier layer and
It is logical equipped with several thirds for extending to the N-type layer along the extending direction of the N-type electrode line in second transparency conducting layer
Hole, the N-type pad and the N-type electrode line form Ohmic contact by the third through-hole and the N-type layer,
Second current barrier layer includes several units detached by the third through-hole, and the unit is along the N-type electrode
The ratio between spacing between the length of the extending direction of line and the unit is 1/4~3/4.
2. light emitting diode according to claim 1, which is characterized in that the shape of the unit is round, annular, triangle
It is one or more in shape, pentalpha.
3. according to claim 1-2 any one of them light emitting diodes, which is characterized in that the N-type pad and the N-type layer
Between be laminated with second current barrier layer and second transparency conducting layer.
4. a kind of production method of light emitting diode, which is characterized in that the production method includes：
N-type layer, luminescent layer, P-type layer are sequentially formed on substrate；
The groove that the N-type layer is extended to from the P-type layer is opened up in the P-type layer；
The first current barrier layer is formed in the P-type layer, forms the second current barrier layer in the N-type layer, described second
Multiple third through-holes for extending to the N-type layer are equipped in current barrier layer；
The first transparency conducting layer is formed in the P-type layer and on first current barrier layer, is hindered in second electric current
The second transparency conducting layer is formed in barrier；
The passivation layer extended in the groove is formed on first transparency conducting layer, is equipped with and is extended in the passivation layer
The first through hole of the P-type layer and the second through-hole for extending to first transparency conducting layer；
P-type pad is set in the first through hole, P-type electrode line is set in second through-hole, in the third through-hole
N-type electrode line is arranged in interior setting N-type pad in the third through-hole and on second transparency conducting layer,
Second current barrier layer includes several units detached by the third through-hole, and the unit is along the N-type electrode
The ratio between spacing between the length of the extending direction of line and the unit is 1/4~3/4.
5. production method according to claim 4, which is characterized in that the shape of the unit is round, annular, triangle
It is one or more in shape, pentalpha.
6. according to claim 4-5 any one of them production methods, which is characterized in that the N-type pad and the N-type layer it
Between be laminated with second current barrier layer and second transparency conducting layer.
7. according to claim 4-5 any one of them production methods, which is characterized in that described in first transparency conducting layer
Upper formation extends to passivation layer in the groove, be equipped in the passivation layer first through hole for extending to the P-type layer and
The second through-hole of first transparency conducting layer is extended to, including：
One layer of passivation layer is laid on first transparency conducting layer and second transparency conducting layer；
The photoresist of setting figure is formed on the passivation layer using photoetching process；
The passivation layer is performed etching using the photoresist of the setting figure, is formed in the passivation layer described in extending to
The first through hole of P-type layer and the second through-hole for extending to first transparency conducting layer.
8. production method according to claim 7, which is characterized in that it is described that p-type pad is set in the first through hole,
In second through-hole be arranged P-type electrode line, in the third through-hole be arranged N-type pad, in the third through-hole and
N-type electrode line is set on second transparency conducting layer, including：
Electrode is formed in the first through hole, in the second through-hole, in third through-hole and on the photoresist；
The photoresist is removed, the p-type pad, the P-type electrode line, the N-type pad and the N-type electrode are obtained
Line.
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| CN107507896A (en) * | 2017-09-25 | 2017-12-22 | 广东工业大学 | A kind of ultraviolet LED light source inverted structure |
| CN108110107A (en) * | 2017-12-18 | 2018-06-01 | 湘能华磊光电股份有限公司 | A kind of production method of LED chip |
| CN108321269A (en) * | 2018-04-08 | 2018-07-24 | 聚灿光电科技（宿迁）有限公司 | LED chip and its manufacturing method |
| CN110534623B (en) * | 2019-09-03 | 2021-06-11 | 厦门乾照光电股份有限公司 | LED chip and manufacturing method thereof |
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