CN104332532A - Method for manufacturing high-luminous-efficiency light-emitting diode - Google Patents
Method for manufacturing high-luminous-efficiency light-emitting diode Download PDFInfo
- Publication number
- CN104332532A CN104332532A CN201310306402.XA CN201310306402A CN104332532A CN 104332532 A CN104332532 A CN 104332532A CN 201310306402 A CN201310306402 A CN 201310306402A CN 104332532 A CN104332532 A CN 104332532A
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- Prior art keywords
- ito
- thin film
- layer
- ito thin
- gan
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 238000000137 annealing Methods 0.000 claims abstract description 23
- 230000001795 light effect Effects 0.000 claims description 8
- 238000000407 epitaxy Methods 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 10
- 230000031700 light absorption Effects 0.000 abstract description 6
- 238000002834 transmittance Methods 0.000 abstract 1
- 238000005566 electron beam evaporation Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000001706 oxygenating effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The object of the present invention is to provideA method for manufacturing a light emitting diode with high luminous efficiency. ITO is adopted as the transparent conductive film of the LED. In order to reduce the light absorption of the ITO to the LED quantum well, the thickness of the ITO thin film is reduced to 1200The following. The ITO film is prepared by two steps: firstly, a first layer of ITO is evaporated with a thickness of 500Annealing at high temperature in an annealing furnace to form good ohmic contact with the P-GaN; second, continue to evaporate a second layer of ITO with a thickness of 700A
Description
Technical field
The present invention relates to field of photoelectric devices, be specifically related to a kind of manufacture method of high light effect LED.
Background technology
Light-emitting diode (LED) is a kind of junction type electroluminescence semiconductor device that can convert the electrical signal to light signal.Compared to other conventional light source, high performance lED has that photoelectric conversion efficiency is high, life-span length, low-loss, the significant advantage such as pollution-free, therefore reducing general illumination electricity consumption by high light efficiency LED as the lighting source of environmental protection is energy savings, the very important selection reducing carbon emission amount.
Usually adopt tin indium oxide (ITO) as P face transparency electrode in the technical process preparing LED chip.The square resistance of ITO is lower, has good current expansion effect.ITO anneals afterwards and P-GaN can form good ohmic contact, 45mil high-power LED chip operating voltage can be reduced to below 3.5v (@350mA).In addition higher, the refractive index (n=1.9) of the transmitance of ITO conductive film own is between GaN (n=2.5) and air (n=1), can by the wide extracting section of GaN material inside out.
ITO transparent conductive film adopts the method for electron beam evaporation to prepare the monocycle usually
thickness, before annealing, transmitance is about 90%, and sheet resistance is 30 ~ 40 Ω/.Usual ito thin film will be annealed through high temperature (500 degree), could form good ohmic contact with P-GaN.But high annealing makes ITO crystallization degree increase, and peripheral electron is more stable, the sheet resistance of film is also higher.In addition, usually adopt the boiler tube under nitrogen atmosphere to anneal to ITO, oxygen residual in chamber can make the further oxygenating of ITO, and ITO sheet resistance also can be made to increase.Though therefore after annealing, ITO transparent rate increases about 5%, sheet resistance rises to 40 ~ 60 Ω/.
The light absorption obtaining high light efficiency LED chip if want, require that the transmitance of ITO transparent conductive film is higher, sheet resistance is less, send LED quantum well is less, and therefore the brightness of LED chip can improve further, operating voltage decline further.If reduce the thickness of ito thin film, because ito thin film reduces the light absorption of LED quantum well, the brightness of LED chip can increase, but the reduction due to ITO thickness can make sheet resistance significantly increase, anneal in addition and ITO sheet resistance is increased, the voltage of final LED chip also can increase, and light efficiency does not significantly improve.
Summary of the invention
The object of the invention is to, a kind of manufacture method of high light effect LED is provided.Adopt ITO as LED transparent conductive film.For reduce ITO to the light absorption of LED quantum well, improve LED luminance, the thickness of ito thin film is reduced to
below.Because the minimizing of ito thin film thickness and annealing process make ITO sheet resistance increase, LED electrical finally can be made to press to be increased, and for alleviating this impact, the present invention proposes to be divided into by ito thin film two steps to prepare: the first step, first evaporation ground floor ITO, thickness
below, high annealing in annealing furnace, forms good ohmic contact with P-GaN, second step, ground floor ITO after annealing continues evaporation second layer ITO, thickness
left and right, this rete is unannealed, prevents the LED sheet resistance increase because annealing crystallization and oxygenating cause, operating voltage increase.
Compared with adopt the inventive method to prepare ito thin film prepared by ito thin film and common process, transmitance does not obviously reduce, but owing to reducing the light absorption of quantum well, the optical power ratio common process increase by more than 5% of prepared LED high-power chip.Compared with adopt the inventive method to prepare ito thin film prepared by ito thin film and common process, sheet resistance is not significantly increased, and ohmic contact is good, and the operating voltage of prepared LED high-power chip is not increased significantly than common process.Therefore, the light efficiency of final LED high-power chip improves more than 3%.
Accompanying drawing explanation
For further illustrating concrete technology contents of the present invention, be described in detail as follows below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is the structural representation of common process LED.
Fig. 2 is present invention process LED structure schematic diagram.
Fig. 3 is common process and present invention process l-V curve comparison figure.Wherein common process ITO thickness is
through 500 degree of high annealings.Present invention process ITO gross thickness
before
through 500 degree of high annealings, after
without annealing.Adopt the operating voltage of the LED45mil high-power chip of present invention process under 350mA operating current than common process LED only high 0.06V.
Fig. 4 is common process and present invention process P-I curve comparison figure.Wherein common process ITO thickness is
through 500 degree of high annealings.Present invention process ITO gross thickness
before
through 500 degree of high annealings, after
without annealing.Adopt the optical power ratio common process LED of LED45mil high-power chip under 350mA operating current of present invention process high by 6%.
Embodiment
Refer to shown in Fig. 2 (LED structure schematic diagram of the present invention), the invention provides a kind of manufacture method of high light effect LED, comprise the steps:
Step 1: the method adopting metal organic chemical vapor deposition (MOCVD), Sapphire Substrate 1 grows 1 μm of low temperature GaN buffer 2,1 μm successively to undope GaN layer 3,3 μm of N-GaN layers 4,150nm multiple quantum well light emitting layer 5 and 300nmP-GaN layer 6, form GaN epitaxy sheet;
Step 2: GaN epitaxy sheet is carried out litho pattern preparation, select AZ4620 photoresist as mask, ICP etching is carried out to the side of GaN epitaxy sheet, remove the P-GaN of side, quantum well and part N-GaN, form table top 41, the etching depth 700nm ~ 1500nm of this table top 41.Use Cl
2, BCl
3, Ar
2as etching gas, wherein Cl
2flow is 30-100sccm, BCl
3flow is 10-20sccm, Ar
2flow is 15-25sccm, and etching power is 400-700W, and radio-frequency power is 100-200W; Etch period is 10-15min.
Step 3: the method evaporation ground floor ito thin film 7 making deposited by electron beam evaporation at the upper surface of GaN epitaxy sheet, thickness
chamber temp 210 degree, oxygen flow 8sccm.From electron beam evaporation platform, take out substrate, substrate is put into annealing furnace and anneals.Annealing atmosphere is nitrogen, temperature 500 degree, 20 minutes time.Ground floor ito thin film 7 forms good ohmic contact by high annealing and P-GaN, reduces touch voltage;
Step 4: the substrate after annealing is put into electron beam evaporation platform evaporation second layer ito thin film 8, thickness again
chamber temp 210 degree, oxygen flow 8sccm.Second layer ito thin film 8 is without the need to annealing, and the LED sheet resistance that the crystallization avoiding high annealing to bring and oxygenating cause increases, finally LED operating voltage increased;
Step 5: select AZ6130 photoresist and little chloroazotic acid (3HCl:HNO
3) photoetching corrosion goes out ITO pattern, removes the ito thin film 7 and 8 on P-GaN6 and Multiple Quantum Well 5 sidewall, remove the ito thin film 7 and 8 on table top 41, P type table top forms ito transparent electrode.
Step 6: select negative photoresist L-300 photoetching P, N electrode on P-GaN layer 6, ITO layer 8 and N-GaN layer 41, adopts electron-beam vapor deposition method evaporation metal CrPtAu
p electrode 9 and N electrode 10 is formed after peeling off.The thickness of P, N electrode metal is thicker, routing test when being convenient to packaged chip;
Step 7: by the reducing thin of sapphire substrate of slice, thin piece to 150um, draws and is cleaved into independent chip, carry out V-I characteristic test and the P-I characteristic test of device.
Claims (4)
1. a manufacture method for high light effect LED, comprises the steps:
Step 1: the method adopting metal organic chemical vapor deposition (MOCVD), on semiconductor substrate 1 growing low temperature GaN resilient coating 2, the GaN layer that undopes 3, N-GaN layer 4, multiple quantum well light emitting layer 5 and P-GaN layer 6 successively, forms GaN epitaxy sheet;
Step 2: etched the side of GaN epitaxy sheet, forms table top 41;
Step 3: at the upper surface evaporation ground floor ito thin film 7 of GaN epitaxy sheet, in the lehr ground floor ito thin film 7 is annealed;
Step 4: evaporation second layer ito thin film 8 on ground floor ito thin film 7 after annealing, does not anneal;
Step 5: photoetching and etching process are carried out to ground floor ito thin film 7 and second layer ito thin film 8, P type table top forms ito transparent electrode;
Step 6: make P electrode on second layer ito thin film 8, table top 41 makes N electrode, completes device preparation.
2. the manufacture method of a kind of high light effect LED according to claim 1, wherein said Semiconductor substrate 1 is sapphire, silicon, carborundum or metal.
3. the manufacture method of a kind of high light effect LED according to claim 1, wherein the thickness of ground floor ito thin film 7 is
the thickness of second layer ito thin film 8 is
.
4. the manufacture method of a kind of high light effect LED according to claim 1, wherein the etching depth of table top 41 arrives in N-GaN layer 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310306402.XA CN104332532A (en) | 2013-07-22 | 2013-07-22 | Method for manufacturing high-luminous-efficiency light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310306402.XA CN104332532A (en) | 2013-07-22 | 2013-07-22 | Method for manufacturing high-luminous-efficiency light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104332532A true CN104332532A (en) | 2015-02-04 |
Family
ID=52407224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310306402.XA Pending CN104332532A (en) | 2013-07-22 | 2013-07-22 | Method for manufacturing high-luminous-efficiency light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104332532A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140368A (en) * | 2015-08-05 | 2015-12-09 | 湘能华磊光电股份有限公司 | High-performance light-emitting diode (LED) chip and fabrication method thereof |
| CN106206895A (en) * | 2016-08-24 | 2016-12-07 | 西安中为光电科技有限公司 | A kind of LED with double current spreading layer and preparation method thereof |
| CN106531615A (en) * | 2015-09-14 | 2017-03-22 | 映瑞光电科技(上海)有限公司 | Preparation method for improving luminous efficiency of LED (Light Emitting Diode) chip |
| CN108336194A (en) * | 2018-01-11 | 2018-07-27 | 太原理工大学 | A kind of preparation method of LED electrode |
| RU2690036C1 (en) * | 2018-07-25 | 2019-05-30 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Method for production of nitride light-emitting diode |
| CN111525012A (en) * | 2020-04-29 | 2020-08-11 | 厦门三安光电有限公司 | Light emitting diode and manufacturing method thereof |
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2013
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140368A (en) * | 2015-08-05 | 2015-12-09 | 湘能华磊光电股份有限公司 | High-performance light-emitting diode (LED) chip and fabrication method thereof |
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Application publication date: 20150204 |