CN201910440U

CN201910440U - GaN-substrate light-emitting diode with epitaxial structure

Info

Publication number: CN201910440U
Application number: CN2010206979041U
Authority: CN
Inventors: 王立彬; 李志翔
Original assignee: TONGFANG OPTO-ELECTRONIC Co Ltd
Current assignee: Tongfang Co Ltd
Priority date: 2010-12-27
Filing date: 2010-12-27
Publication date: 2011-07-27
Anticipated expiration: 2020-12-27

Abstract

The utility model relates to a GaN-substrate light-emitting diode with an epitaxial structure, relating to the technical field of photoelectricity. The light-emitting diode comprises a sapphire substrate and an N-GaN layer, a multi-quantum well layer, a P-GaN layer and an ITO film which are arranged on the sapphire substrate in sequence, wherein the ITO film and the N-GaN layer are respectively provided with a metal electrode Cr/Pt/Au layer. The light-emitting diode is structurally characterized in that a ring of substrate plane is exposed on the edge of the upper surface of the sapphire substrate. Compared with the prior art, the light-emitting diode is combined with the epitaxial technology, and in the epitaxial process, a cutting channel part do not generate GaN materials in an epitaxial manner, so that the sapphire substrate is exposed, patterns of the patterned substrate are fully utilized, and simultaneously, the poor refractive index of the substrate and a packaging medium is utilized, so that the light-emitting efficiency is improved.

Description

A kind of GaN sill light-emitting diode of epitaxial structure

Technical field

The utility model relates to field of photoelectric technology, particularly the GaN sill light-emitting diode of epitaxial structure.

Background technology

The GaN sill is the most frequently used method for preparing the LED chip, and the various light sources of GaN LED preparation have energy-saving and environmental protection, cold light source, color rendering index height, response speed is fast, volume is little and outstanding advantage such as long working life.LED has moved towards fields such as backlight, illumination from traffic lights, show label, Landscape Lighting, the semiconductor solid light source demonstrates huge application potential as the green solid light source of a new generation's illumination revolution.

In the prior art, the GaN epitaxial substrate is mainly based on sapphire, SiC, and wherein Sapphire Substrate is that most of producers adopt.For improving LED efficient, each producer all takes patterned substrate.Patterned substrate has become the mainstream technology of GaN extension at present.Be to have put down in writing in " a kind of method of utilizing patterned substrate to improve GaN base LED luminous efficiency " of CN101345274 as the Chinese patent publication number, patterned substrate can be a dry etching, it also can be wet etching, figure can be arbitrary graphics such as square, hemisphere, bar shaped, and figure can be projection or pit.The various LED structures of growth on this patterned substrate, this structure comprises N-GaN, and quantum well, P-GaN make the LED device according to various technical schemes then.Though the patterned substrate technology is widely used in GaN LED, present led chip manufacturing technology is owing to be that Sapphire Substrate is covered fully all, and the characteristics with patterned substrate do not use fully, and light extraction efficiency has much room for improvement.

Summary of the invention

In order to overcome above-mentioned the deficiencies in the prior art, the purpose of this utility model provides a kind of GaN sill light-emitting diode of epitaxial structure.It is in conjunction with epitaxy technology, in epitaxial process, make the Cutting Road part no longer extension go out the GaN material, thereby Sapphire Substrate is come out, make full use of the figure of patterned substrate, utilize the refringence of substrate and encapsulation medium simultaneously, the raising light extraction efficiency.

In order to reach the foregoing invention purpose, the technical solution of the utility model realizes as follows:

A kind of GaN sill light-emitting diode of epitaxial structure, N-GaN layer, multiple quantum well layer, P-GaN layer and ito thin film that it comprises Sapphire Substrate and places the Sapphire Substrate top successively are equipped with metal electrode Cr/Pt/Au layer respectively on ito thin film and the N-GaN layer.Its design feature is that the upper surface edge of described Sapphire Substrate exposes a circle substrate plane.

In above-mentioned light-emitting diode, described substrate plane is patterned substrate or flat substrate.

The utility model can lose deeply owing to adopted said structure, and realizes the effect of deep erosion, and the chip of corresponding different size can improve light efficiency 3%～15%; Simultaneously, the stress in the minimizing epitaxial process.The utility model can make full use of the figure of patterned substrate, utilizes the refringence of substrate and encapsulation medium simultaneously, improves light extraction efficiency.

The utility model is described in further detail below in conjunction with the drawings and specific embodiments.

Description of drawings

Fig. 1 to Figure 13 is the step schematic diagram of preparation the utility model GaN sill light-emitting diode;

Figure 13 also is the utility model GaN sill light-emitting diode structure schematic diagram.

Embodiment

Referring to Figure 13, the light-emitting diode of the utility model GaN sill, it comprises Sapphire Substrate 1 and places the N-GaN layer 5 of Sapphire Substrate 1 top, multiple quantum well layer 6, P-GaN layer 7 and ito thin film 8 successively, is equipped with metal electrode Cr/Pt/Au layer 15 on ito thin film 8 and the N-GaN layer 5 respectively.The upper surface edge of Sapphire Substrate 1 exposes the substrate plane 16 of a circle patterned substrate or flat substrate.

The preparation method of the light-emitting diode of the utility model GaN sill is:

1) referring to Fig. 1, deposition one deck SiO on Sapphire Substrate 1 ₂Film 2.Sapphire Substrate 1 can be flat substrate, also can be patterned substrate, and patterned substrate can be various figures and arrangement mode. this layer SiO ₂ Film 2 can be SiOx, SiNx or other media.

2) referring to Fig. 2, at SiO ₂The both sides resist coating of film 2 end faces and the formation masking layer 1 that develops.

3), erode the SiO that exposes referring to Fig. 3 ₂, expose the end face 4 of Sapphire Substrate 1 mid portion, remove photoresist.

4) referring to Fig. 4, put into metal organic vapor phase epitaxy MOCVD equipment, extension goes out the LED structure on end face 4, wherein is followed successively by N-GaN layer 5, multiple quantum well layer 6 and P-GaN layer 7 from bottom to up, and anneals in 550 ℃～750 ℃ annealing furnace.

5) referring to Fig. 5, BOE erodes SiO with hydrofluoric acid containing ₂, the evaporation of deposited by electron beam evaporation E-beam method forms ito thin film 8.

6) referring to Fig. 6, at the ito thin film 8 end face resist coatings and the formation masking layer 29 that develops.

7) referring to Fig. 7, wet etching goes out the ITO figure, exposes the surface 10 of P-GaN layer 7.

8) referring to Fig. 8, etch the table top 11 of N-GaN layer 5 one side with ICP equipment, etching gas can contain Cl2, BCl3, removes photoresist.

9), recoat photoresist and develop formation masking layer 3 12 referring to Fig. 9;

10) referring to Figure 10, wet etching ito thin film 8 is removed photoresist, and at N ₂Anneal 500 ℃～650 ℃ of annealing temperatures in the atmosphere.

11), deposit the E-BEAM method at superficial growth SiO with plasma enhanced chemical vapor deposition PECVD method or photoresist referring to Figure 11 ₂ Film 13 is at SiO ₂The resist coating development forms masking layer 4 14 on the film 13.

12), erode the SiO that exposes with hydrofluoric acid containing BOE referring to Figure 12 ₂ Film 13.

13) referring to Figure 13, remove photoresist, electron beam evaporation method substep evaporated metal electrode Cr/Pt/Au layer 15, and separate metal electrode Cr/Pt/Au layer 15; At N ₂Annealed 10 minutes for 300 ℃ in the atmosphere, form light-emitting diode.

The LED manufacture craft of more than enumerating is a kind of production program of this epitaxial structure, and extension scheme of the present utility model can be finished the making of LED in conjunction with other LED manufacture crafts, and formed technical scheme also belongs to protection range of the present utility model.

Claims

1. the GaN sill light-emitting diode of an epitaxial structure, N-GaN layer (5), multiple quantum well layer (6), P-GaN layer (7) and ito thin film (8) that it comprises Sapphire Substrate (1) and places Sapphire Substrate (1) top successively, be equipped with metal electrode Cr/Pt/Au layer (15) respectively on ito thin film (8) and the N-GaN layer (5), it is characterized in that the upper surface edge of described Sapphire Substrate (1) exposes a circle substrate plane (16).

2. the light-emitting diode of GaN sill according to claim 1 is characterized in that, described substrate plane (16) is patterned substrate or flat substrate.