CN104576845A - Producing method for graphical sapphire substrate - Google Patents
Producing method for graphical sapphire substrate Download PDFInfo
- Publication number
- CN104576845A CN104576845A CN201410774549.6A CN201410774549A CN104576845A CN 104576845 A CN104576845 A CN 104576845A CN 201410774549 A CN201410774549 A CN 201410774549A CN 104576845 A CN104576845 A CN 104576845A
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- substrate
- patterned
- manufacture method
- insulating film
- sapphire substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
Abstract
The invention discloses a producing method for a graphical sapphire substrate. A flat substrate is provided; a mask layer is formed on the surface; a graphical mask layer is produced on the surface of the mask layer by utilizing a photolithography; a graph is formed on the surface of the substrate by adopting a wet process corrosion or dry process etching technology by utilizing the graphical mask layer; the mask layer is removed; an insulating medium film is formed on the surface of the graphical substrate; the insulating medium film in the clearance of the graphical substrate is protected by utilizing the photolithography; the insulating medium film out of the photolithography protection is removed by adopting the wet process corrosion or dry process etching technology. According to the invention, epitaxy cannot grow on the surface of the insulating medium film; the epitaxial growth in the vertical direction is avoided; lateral epitaxial growth is increased; the dislocation density in a glowing area is reduced; the insulating medium film with certain film thickness is adopted to fill the clearance of the graphical substrate; the depth of the clearance is reduced; epitaxial growth cycle is reduced.
Description
Technical field
The present invention relates to semiconductor optoelectronic chip manufacturing field, particularly relate to a kind of substrate graph technology improving epitaxial lateral overgrowth effect.
Background technology
Semiconductor light-emitting-diode (LED) is New Solid cold light source, the plurality of advantages such as its efficiency is high, the life-span is long, volume is little, voltage is low, it is made to be widely used in daily life, traffic-control device, headlight, outdoor display, cell phone back light source, the employing LED that the indicator light of electrical equipment, some illuminating street lamp are all extensively a large amount of.Especially in energy-conserving and environment-protective, LED compares ordinary incandescent lamp and fluorescent lamp has obvious advantage, and therefore following replacement conventional light source becomes primary illumination light source becomes common recognition.
Current LED epitaxial loayer adopts in metal-organic chemical vapor deposition equipment technology (MOCVD) heteroepitaxy mostly to be prepared, due to the lattice mismatch between substrate and extension and thermal mismatching inconsistent, the epitaxial crystal of growth can be caused so second-rate, in order to improve crystal mass, researcher adopts buffer layer technique to improve epitaxial crystal quality, and Be very effective, but still there is higher dislocation density in epitaxial loayer.High dislocation density causes the leakage current of device to strengthen, decrease in efficiency and service life reduction, in order to improve the crystal mass of epitaxial loayer further, researcher adopts epitaxial lateral overgrowth technology (ELOG), utilizing the blocking-up of dislocation and turning to makes threading dislocation stop, can not continue upwards to expand to luminous zone, improve epitaxial crystal quality, improve device performance, that current use is maximum is surface graphics substrate technology (PSS), this can not only make extension in growth course, utilize epitaxial lateral overgrowth to reduce dislocation density, improve crystal mass, but also PSS figure can be utilized to be reflected back from the light of luminous zone directive substrate by not coplanar, improve the escape probability of light, improve the light extraction efficiency of chip.
Although epitaxial lateral overgrowth can improve crystal mass, but still have some problems, as shown in Fig. 1 (a), for epitaxial lateral overgrowth, because the threading dislocation of the outer Yanzhong of vertical direction is consistent with crystal growth direction, so dislocation line can extend to luminous zone along crystal growth direction, affect device performance, and the dislocation of epitaxial lateral overgrowth can be fallen in interface termination, therefore epitaxial lateral overgrowth will be utilized to reduce defect concentration, just need the epitaxial growth avoiding vertical direction, increase the epitaxial growth of side surface direction, epitaxial crystal quality can be improved like this, reduce defect concentration, improve chip light emitting intensity and reliability.
Except above except these, there is certain depth in the gap of patterned substrate, if the degree of depth is too low, then there is not larger lifting to the escape probability of light, and the degree of depth is too high, then spends the more time to go to fill up these gaps in the necessary for growth of extension, can epitaxial growth cycle be increased like this.
In order to solve the problem, be necessary to design a kind of patterned substrate, avoid the epitaxial growth of vertical direction in epitaxial lateral overgrowth process on the one hand, increase laterally overgrown, on the other hand under the prerequisite not damaging light escape probability, reduce epitaxial growth cycle.
Summary of the invention
For prior art above shortcomings, the object of this invention is to provide a kind of patterned substrate, avoid the epitaxial growth of vertical direction in epitaxial lateral overgrowth process on the one hand, increase laterally overgrown, reduce epitaxial growth cycle.
For achieving the above object, the invention provides a kind of manufacture method of patterned Sapphire Substrate, comprise the steps:
A., one flat substrate is provided, forms mask layer on its surface;
B. photoetching technique is utilized to make patterned mask layer on its surface;
C. utilize patterned mask layer, adopt wet etching or dry etch process are formed graphical at substrate surface and remove mask layer;
D. dielectric insulating film is formed at patterned substrate surface;
E. the dielectric insulating film between photoetching technique protection patterned substrate gap is utilized;
F. employing wet etching or dry etch process remove the dielectric insulating film beyond photoetching protection.
Further, described dielectric insulating film is silicon dioxide, silicon nitride, nitrogen-oxygen-silicon.
Further, described dielectric insulating film manufacture method is chemical vapour deposition (CVD), evaporation or sputtering.
Further, described substrate is Sapphire Substrate, silicon substrate, aluminium nitride substrate, silicon carbide substrates, zinc oxide substrate.
Further, described dielectric insulating film shape is one in rectangle, square, circle or polygon or combination.
Further, the shape between described dielectric insulating film shape and patterned substrate gap is consistent.
Further, described dielectric film thickness is 1nm-1 μm.
Further, described dielectric film thickness is 200nm.
Beneficial effect of the present invention:
1. this substrate manufacture method adopts dielectric insulating film surface can not growing epitaxial, avoids the epitaxial growth of vertical direction, adds laterally overgrown, reduce luminous zone dislocation density.
2. adopt the dielectric insulating film of certain thickness to be filled with patterned substrate gap, gap depth is shoaled, decreases epitaxial growth cycle.
3. adopt the dielectric insulating film lower than refractive index of substrate, can make light, at epitaxial loayer and dielectric membrane interface, full transmitting occur, increase the probability of light from chip front side outgoing.
Accompanying drawing explanation
Fig. 1 (a)-1(g) be the cross-sectional view of the manufacture process in a kind of patterned substrate structure of the present invention and preparation method thereof embodiment one.
Fig. 2 (a)-2(m) be the cross-sectional view of the manufacture process in a kind of patterned substrate structure of the present invention and preparation method thereof embodiment two.
Embodiment one: 1-substrate; 2-ground floor photoresist; 3-silicon dioxide; 4-second layer photoresist;
Embodiment two: 1-substrate; 2-ground floor silicon dioxide; 3-ground floor photoresist; 4-second layer silicon dioxide; 5-second layer photoresist.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.
Secondly, the present invention utilizes schematic diagram to be described in detail, when describing the embodiment of the present invention in detail; for ease of explanation; represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, it should not limit the scope of protection of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
A manufacture method for patterned Sapphire Substrate, is characterized in that, comprises the steps:
A., one flat substrate 1 is provided, forms mask layer on its surface;
B. photoetching technique is utilized to make patterned mask layer on its surface;
C. utilize patterned mask layer, adopt wet etching or dry etch process are formed graphical on substrate 1 surface and remove mask layer;
D. dielectric insulating film is formed on patterned substrate 1 surface;
E. the dielectric insulating film between photoetching technique protection patterned substrate 1 gap is utilized;
F. employing wet etching or dry etch process remove the dielectric insulating film beyond photoetching protection.
Described dielectric insulating film is silicon dioxide, silicon nitride, nitrogen-oxygen-silicon.
Described dielectric insulating film manufacture method is chemical vapour deposition (CVD), evaporation or sputtering.
Described substrate 1 is Sapphire Substrate, silicon substrate, aluminium nitride substrate, silicon carbide substrates, zinc oxide substrate.
Described dielectric insulating film shape is one in rectangle, square, circle or polygon or combination.
Shape between described dielectric insulating film shape and patterned substrate gap is consistent.
Described dielectric film thickness is 1nm-1 μm.
Described dielectric film thickness is 200nm.
embodiment one
Shown in the present embodiment composition graphs 1, the patterned substrate that the present embodiment adopts dry method to obtain.
1, a smooth Sapphire Substrate 1 is provided, at the ground floor photoresist 2 on its 2.5 μm, surface, as shown in Fig. 1 (a);
2, utilize lithography exposure ground floor photoresist 2, form the figure as shown in Fig. 1 (b) on its surface;
3, adopt ICP technique, utilize boron trichloride gas to go out figure in substrate 1 surface etch, remove remaining ground floor photoresist 2, form figure as Suo Shi Fig. 1 (c);
4, using plasma strengthens the silicon dioxide 3 of chemical vapour deposition (CVD) at patterned substrate 1 surface deposition 200nm, as shown in Fig. 1 (d);
5, utilize lithography exposure second layer photoresist 4, form figure as Suo Shi Fig. 1 (f) on its surface;
6, corrode silicon dioxide 3 forms figure shown in Fig. 1 (g).
embodiment two
Shown in the present embodiment composition graphs 2, the patterned substrate that the present embodiment adopts wet method to obtain.
1, provide a smooth Sapphire Substrate 1, the ground floor silicon dioxide 2 on its surface by plasma enhanced chemical vapor deposition 100nm, as shown in Fig. 2 (a);
2, utilize lithography exposure photoresist, form figure as Suo Shi Fig. 2 (c), detailed process is shown in shown in Fig. 2 (b) He 2 (c);
3, corrode ground floor silicon dioxide 2, obtain the figure as shown in Fig. 2 (e), detailed process refers to shown in Fig. 2 (d) He 2 (e);
4,270 DEG C are adopted, phosphoric acid: soak the some time in the mix acid liquor of sulfuric acid=1:3, obtains figure as Suo Shi Fig. 2 (g), then removes surperficial ground floor silicon dioxide 2, retain ground floor photoresist 3, detailed process refers to Fig. 2 (f) and 2 (g);
5, adopt 270 DEG C, phosphoric acid: soak the some time in the mix acid liquor of sulfuric acid=1:3, obtain figure as Suo Shi Fig. 2 (h);
6, at the second layer silicon dioxide 4 of its surface deposition 200nm, as shown in Fig. 2 (i);
7, lithography exposure is utilized to corrode second layer silicon dioxide 4, retain second layer photoresist 5, obtain figure as Suo Shi Fig. 2 (m), detailed process refers to Fig. 2 (j), 2 (k), 2 (l) and 2 (m).
Claims (8)
1. a manufacture method for patterned Sapphire Substrate, is characterized in that, comprises the steps:
A., one flat substrate is provided, forms mask layer on its surface;
B. photoetching technique is utilized to make patterned mask layer on its surface;
C. utilize patterned mask layer, adopt wet etching or dry etch process are formed graphical at substrate surface and remove mask layer;
D. dielectric insulating film is formed at patterned substrate surface;
E. the dielectric insulating film between photoetching technique protection patterned substrate gap is utilized;
F. employing wet etching or dry etch process remove the dielectric insulating film beyond photoetching protection.
2. the manufacture method of a kind of patterned Sapphire Substrate according to claim 1, is characterized in that: described dielectric insulating film is silicon dioxide, silicon nitride, nitrogen-oxygen-silicon.
3. the manufacture method of a kind of patterned Sapphire Substrate according to claim 1, is characterized in that: described dielectric insulating film manufacture method is chemical vapour deposition (CVD), evaporation or sputtering.
4. the manufacture method of a kind of patterned Sapphire Substrate according to claim 1, is characterized in that: described substrate is Sapphire Substrate, silicon substrate, aluminium nitride substrate, silicon carbide substrates, zinc oxide substrate.
5. the manufacture method of a kind of patterned Sapphire Substrate according to claim 1, is characterized in that: described dielectric insulating film shape is one in rectangle, square, circle or polygon or combination.
6. the manufacture method of a kind of patterned Sapphire Substrate according to claim 1, is characterized in that: the shape between described dielectric insulating film shape and patterned substrate gap is consistent.
7. the manufacture method of a kind of patterned Sapphire Substrate according to claim 1, is characterized in that: described dielectric film thickness is 1nm-1 μm.
8. the manufacture method of a kind of patterned Sapphire Substrate according to claim 7, is characterized in that: described dielectric film thickness is 200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410774549.6A CN104576845A (en) | 2014-12-16 | 2014-12-16 | Producing method for graphical sapphire substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410774549.6A CN104576845A (en) | 2014-12-16 | 2014-12-16 | Producing method for graphical sapphire substrate |
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| CN104576845A true CN104576845A (en) | 2015-04-29 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355739A (en) * | 2015-10-23 | 2016-02-24 | 安徽三安光电有限公司 | Patterned substrate, preparation method and light-emitting diode |
| CN106887495A (en) * | 2017-03-22 | 2017-06-23 | 湘能华磊光电股份有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
| CN108492157A (en) * | 2017-12-18 | 2018-09-04 | 上海云拿智能科技有限公司 | Self-service system and self-service method |
| CN108987541A (en) * | 2018-07-12 | 2018-12-11 | 山东元旭光电股份有限公司 | A kind of production method of tri compound graph substrate |
| CN113066908A (en) * | 2021-03-15 | 2021-07-02 | 广东中图半导体科技股份有限公司 | Graph complementary composite substrate, preparation method and LED epitaxial wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101562223A (en) * | 2008-04-16 | 2009-10-21 | 台湾积体电路制造股份有限公司 | Semiconductor device |
| KR20130066308A (en) * | 2011-12-12 | 2013-06-20 | 엘지이노텍 주식회사 | Light emitting device |
| CN203800068U (en) * | 2014-04-10 | 2014-08-27 | 杭州士兰明芯科技有限公司 | Patterned substrate and flip LED chip |
-
2014
- 2014-12-16 CN CN201410774549.6A patent/CN104576845A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101562223A (en) * | 2008-04-16 | 2009-10-21 | 台湾积体电路制造股份有限公司 | Semiconductor device |
| KR20130066308A (en) * | 2011-12-12 | 2013-06-20 | 엘지이노텍 주식회사 | Light emitting device |
| CN203800068U (en) * | 2014-04-10 | 2014-08-27 | 杭州士兰明芯科技有限公司 | Patterned substrate and flip LED chip |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355739A (en) * | 2015-10-23 | 2016-02-24 | 安徽三安光电有限公司 | Patterned substrate, preparation method and light-emitting diode |
| CN106887495A (en) * | 2017-03-22 | 2017-06-23 | 湘能华磊光电股份有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
| CN106887495B (en) * | 2017-03-22 | 2019-05-10 | 湘能华磊光电股份有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
| CN108492157A (en) * | 2017-12-18 | 2018-09-04 | 上海云拿智能科技有限公司 | Self-service system and self-service method |
| CN108492157B (en) * | 2017-12-18 | 2023-04-18 | 上海云拿智能科技有限公司 | Unmanned vending system and unmanned vending method |
| CN108987541A (en) * | 2018-07-12 | 2018-12-11 | 山东元旭光电股份有限公司 | A kind of production method of tri compound graph substrate |
| CN113066908A (en) * | 2021-03-15 | 2021-07-02 | 广东中图半导体科技股份有限公司 | Graph complementary composite substrate, preparation method and LED epitaxial wafer |
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Application publication date: 20150429 |