CN106025012A - Preparation method of LED chip and LED chip prepared by adopting method - Google Patents
Preparation method of LED chip and LED chip prepared by adopting method Download PDFInfo
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- CN106025012A CN106025012A CN201610595189.2A CN201610595189A CN106025012A CN 106025012 A CN106025012 A CN 106025012A CN 201610595189 A CN201610595189 A CN 201610595189A CN 106025012 A CN106025012 A CN 106025012A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Abstract
The invention provides a preparation method of an LED chip and an LED chip prepared by adopting the method. The LED chip comprises an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a current blocking layer and an ITO (Indium Tin Oxide) transparent conducting layer covered on the current blocking layer, and is characterized in that the N-type semiconductor layer, the light emitting layer, the P-type semiconductor layer, the current blocking layer and the ITO transparent conducting layer sequentially grow on a substrate, an N electrode is prepared on the N-type semiconductor layer, a P electrode is prepared on the ITO transparent conducting layer, an SiO2 protection layer is deposited at the upper surface of the chip at the outer side of the N electrode, and an SiON anti-reflection film and an SiO2 protection layer are sequentially deposited at the upper surface of the chip at the outer side of the P electrode. According to the invention, the SiON anti-reflection film is deposited at the surface of the ITO transparent conducting layer, and the SiON anti-reflection film is etched by using a phosphoric acid solution, thereby preventing the ITO transparent conducting film from being damaged or polluted in the manufacturing process of the chip, improving the quality of the ITO transparent conducting layer, enabling the chip voltage to be reduced while improving the brightness of the LED chip, and enabling an LED to be more energy-saving and more environment-friendly.
Description
Technical field
The present invention relates to LED chip and manufacture field, especially, relate to the preparation method of a kind of LED chip and use the party
LED chip prepared by method.
Background technology
In LED chip manufacturing process, the making of ITO (Indium Tin Oxide tin indium oxide) thin film is critically important one
Link, it is therefore an objective to utilize the electric conductivity of ito thin film to carry out current expansion, and owing to ito film has the good transparency, protect
Demonstrate,prove the light extraction efficiency of LED chip.
At present, LED chip is made from evaporation transparent conductive layer to deposition SiO2Protective layer includes during this successively
Step: 1, evaporation transparent conductive layer；2, ITO photoetching；3, ITO etching portions of patterned；4, go after ITO pattern
Glue；5, ICP photoetching；6, ICP etching exposes N district；7, remove photoresist after ICP etching；8, deposition SiO2Protective layer.On
Stating in step, transparent conductive layer can be repeated multiple times by developer solution with remove glue in photoetching, etching and stripping process
Etch, such that the Quality Down of transparent conductive layer, affects light extraction efficiency, reduces chip brightness；And ITO
The photoresist of layer at transparent layer can not absolutely be removed totally, the impurity of residual also can affect transparent conductive layer with
The contact of metal electrode, causes chip voltage to raise.
Chinese patent application 201410596788.7 discloses the Al of a kind of LED chip2O3The growth of/SiON anti-reflection film structure
Method: the LED chip after completing ITO etching puts into growth Al2O3In the MOCVD cavity of thin film, then will
MOCVD cavity is warmed up to 400-680 DEG C, is passed through cavity Al source and O source, grows Al2O3Thin film serves as electrode anti-reflection film；
Use negative photoresist to Al2O3Thin film carries out PAD photoetching, forms PAD figure on a photoresist；Use ICP equipment
To Al2O3Thin film carries out dry etching, removes the Al2O3 thin film in PAD graphics field；The anti-reflection film etched away steams
Metallized electrode, forms P, N electrode structure, then removes photoresist, and the chip after removing photoresist is put in tube furnace and moved back
Fire processes；The LED product preparing electrode is put in plasma reinforced chemical vapour deposition PECVD device cavity, logical
Enter N2Preheating, then passes to the mixed gas of the silane, nitrous oxide and the ammonia that diluted, grows SiON anti-reflection film；
Using wet-etching technology to etch away the SiON on P, N electrode surface, so far anti-reflection film growth is complete.This patent application is
At the superficial growth Al of chip after completing ITO etching2O3/ SiON anti-reflection film structure, the step before its ITO etching is also
Can sustain damage and pollute, thus affect the quality of ito film layer, affect the luminosity of LED.
Thus, how to break through prior art and improve the brightness of LED further and remain the skill that those skilled in the art are urgently to be resolved hurrily
Art problem.
Summary of the invention
Present invention aim at the LED chip preparation method of a kind of LED chip being provided and using the method to prepare, to solve
Certainly in existing LED chip processing procedure, transparent conductive layer is easily damaged and pollutes and affect the problem of LED luminance, the present invention
The preparation method of the LED chip provided be evaporation transparent conductive layer followed by ITO surface deposit one layer
SiON anti-reflection film so that ITO is protected by SiON anti-reflection film in chip processing procedure, and use before P electrode is set
Phosphoric acid solution etching SiON anti-reflection film, improves the quality of transparent conductive layer, can effectively promote LED chip
Light extraction efficiency.
For achieving the above object, the invention provides the preparation method of a kind of LED chip, comprise the steps:
Step A, on substrate, successively form epitaxial layer and the ITO comprising n type semiconductor layer, luminescent layer and p type semiconductor layer
Transparency conducting layer；
Step B, on transparent conductive layer deposit one layer of SiON anti-reflection film；
Step C, form the step on n type semiconductor layer by photoetching and etching；Make the luminescent layer in the portion of topping bar, P
Type semiconductor layer, transparent conductive layer and SiON anti-reflection film all retain, and luminescent layer, the p-type on stepped down part is partly led
Body layer, transparent conductive layer and SiON anti-reflection film are all etched removal；
Step D, in whole of the whole upper surface of the LED formation of the stepped down part including SiON anti-reflection film and n type semiconductor layer
One layer of SiO2Protective layer；
Step E, by photoetching and etching SiO2Protective layer and SiON anti-reflection film and formed above transparent conductive layer and use
In arranging the groove P of P electrode, and by photoetching and etching SiO2Protective layer is formed above described stepped down part and is used for arranging
The groove N of N electrode；Wherein, when forming groove P, first use BOE solution etches SiO2Protective layer, uses phosphorus afterwards
Acid solution etching SiON anti-reflection film；
Step F, at described groove P make P electrode and described groove N at making N electrode.
In the present invention, step A also comprised the steps: before forming transparent conductive layer
Step a, on LED epitaxial layer whole deposition current barrier layer；
Step b, utilize photoetching and etch away portion of electrical current barrier layer, retaining the current blocking Rotating fields of desirable pattern.
In the present invention, in described step B, using plasma strengthens chemical vapor deposition SiON anti-reflection film
Thickness range be 100～1500 angstroms.
In the present invention, described step C uses BOE solution etches SiON anti-reflection film.
In the present invention, using BOE solution in described step C is 30～120 seconds to the etching period of SiON anti-reflection film.
In the present invention, in the phosphoric acid solution used in described step E, phosphoric acid is 1～9:1 with the volume ratio of water, corrosion temperature
Being 80 DEG C～200 DEG C, etching time is 30～200 seconds.
It addition, the present invention also provides for LED chip prepared by a kind of said method, described LED chip is at thickness direction successively
Including substrate, epitaxial layer and electrode, and described epitaxial layer includes n type semiconductor layer, luminescent layer and p type semiconductor layer, N
Type semiconductor layer is the stepped ramp type structure including the portion of topping bar and stepped down part, and luminescent layer and p type semiconductor layer are successively set on
Above described portion of topping bar, described p type semiconductor layer being additionally provided with transparent conductive layer, described electrode includes being arranged on down
N electrode in stage portion and the P electrode being arranged on transparent conductive layer, the chip upper surface outside described N electrode
Deposition has SiO2Protective layer, the chip upper surface outside P electrode has been sequentially depositing SiON anti-reflection film and SiO2 protective layer.
In the present invention, the thickness of described SiON anti-reflection film is 100～1500 angstroms.
In the present invention, described p type semiconductor layer is provided with current barrier layer, and described transparent conductive layer is covered in described
Above current barrier layer.
Compared to prior art, the method have the advantages that
1, the present invention complete on LED epitaxial layer deposit transparent conductive layer followed by ITO surface deposit one layer
SiON anti-reflection film so that transparent conductive layer receives SiON after photoetching, etching and photoetching and increases in stripping process
The protection of permeable membrane, it is to avoid transparent conductive layer damaged and pollution, improves the quality of transparent conductive layer, makes
While LED chip luminance raising, voltage decreases；
2, the present invention uses phosphoric acid solution etching SiON anti-reflection film when forming the groove P of P electrode, reduces LED chip
The time contacted with BOE solution, reduce further or avoid in LED chip preparation process to transparent conductive layer wound
Evil；Penetrate transparent conductive layer it addition, this reduces BOE solution and corrode electric current under transparent conductive layer
The risk on barrier layer, further ensures the light extraction efficiency of LED chip.
In addition to objects, features and advantages described above, the present invention also has other objects, features and advantages.
Below with reference to figure, the present invention is further detailed explanation.
Accompanying drawing explanation
The accompanying drawing of the part constituting the application is used for providing a further understanding of the present invention, the illustrative examples of the present invention
And explanation is used for explaining the present invention, it is not intended that inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the sectional structure schematic diagram of a kind of LED chip of the present invention；
Wherein, 1, substrate, 2, n type semiconductor layer, 21, portion of topping bar, 22, stepped down part, 3, luminescent layer, 4,
P type semiconductor layer, 5, transparent conductive layer, 6, SiON anti-reflection film, 7, SiO2Protective layer, 8, N electrode, 9, P
Electrode, 10, current barrier layer.
Detailed description of the invention
Below in conjunction with accompanying drawing, embodiments of the invention are described in detail, but the present invention can according to claim limit and
The multitude of different ways covered is implemented.
Seeing Fig. 1, a kind of LED chip of the present invention, this LED chip includes substrate 1, epitaxial layer successively at thickness direction
And electrode, and epitaxial layer includes that n type semiconductor layer 2, luminescent layer 3 and p type semiconductor layer 4, n type semiconductor layer 2 are
It is successively set on institute including the stepped ramp type structure of the portion of topping bar 21 and stepped down part 22, luminescent layer 3 and p type semiconductor layer 4
Stating above the portion of topping bar 21, p type semiconductor layer 4 is additionally provided with transparent conductive layer 5, electrode includes being arranged on gets out of a predicament or an embarrassing situation
N electrode 8 in portion 22 and the P electrode 9 being arranged on transparent conductive layer 5, the chip upper surface outside N electrode
Deposition has SiO2Protective layer 7, the chip upper surface outside P electrode has been sequentially depositing SiON anti-reflection film 6 and SiO2 protective layer
7。
In a kind of specific embodiment, the thickness of SiON anti-reflection film 6 is 100～1500 angstroms.
In a kind of specific embodiment, p type semiconductor layer 4 is provided with current barrier layer 10, transparent conductive layer 5
It is covered in above current barrier layer.
The preparation method of the above-mentioned LED chip of the embodiment of the present invention, comprises the steps:
Step A, the most successively growth n type semiconductor layer 2, luminescent layer 3 and p type semiconductor layer 4 and form LED
Epitaxial layer；And on epitaxial layer, it is deposited with transparent conductive layer 5；Specifically, can use metal organic chemical vapor deposition,
Molecular beam epitaxy or hydride gas-phase epitaxy technology growth light emitting epitaxial layer, preferably use Organometallic Chemistry gas in the present invention
Phase deposition technique grown epitaxial layer.
Step B, on transparent conductive layer 5 deposit one layer of SiON anti-reflection film 6；The present invention preferably uses wait from
Daughter strengthens chemical vapour deposition technique and deposits SiON anti-reflection film on the surface of transparent conductive layer.
Step C, form the step on n type semiconductor layer 2 by photoetching and etching；Make the luminescence in the portion of topping bar 21
Layer 3, p type semiconductor layer 4, transparent conductive layer 5 and SiON anti-reflection film 6 all retain, and on stepped down part 22
Luminescent layer 3, p type semiconductor layer 4, transparent conductive layer 5 and SiON anti-reflection film 6 are all etched removal.Concrete bag
Include: make with photoresist SiON anti-reflection film to be carried out ITO photoetching, photoresist layer is formed ITO figure layer；With ITO figure layer
For mask BOE solution, SiON anti-reflection film is etched 30～120 seconds, remove SiON anti-reflection film；With ITO figure layer for covering
Mould carries out ITO etching to transparent conductive layer, the photoresist after rear removal ITO photoetching；P type semiconductor layer makes
Carry out MESA photoetching with photoresist, photoresist layer is formed MESA figure layer, utilizes ICP with MESA figure layer for mask
Etching is sequentially etched p type semiconductor layer 4, luminescent layer 3 and n type semiconductor layer 2 from top to bottom, makes n type semiconductor layer
2 formation have the portion of topping bar 21 and the step-like structure of stepped down part 22, expose n type semiconductor layer；Rear removal MESA
Photoresist after photoetching.
Step D, whole at the whole upper surface of LED of the stepped down part 22 including SiON anti-reflection film 6 and n type semiconductor layer
Face forms one layer of SiO2Protective layer 7；
Step E, by photoetching and etching SiO2Protective layer 7 and SiON anti-reflection film 6 and above transparent conductive layer 5
Form the groove P for arranging P electrode 9, and by photoetching and etching SiO2Protective layer 7 is square on stepped down part 22
Become the groove N for arranging N electrode 8；Wherein, when forming groove P, first use BOE solution etches SiO2Protection
Layer 7, rear use phosphoric acid solution etching SiON anti-reflection film 6.In the present invention, make with photoresist to SiO2Protective layer is carried out
PAD photoetching, forms PAD figure layer on photoresist layer；PAD figure layer is performed etching, first uses BOE solution to PAD
The SiO of figure layer region2Protective layer corrodes, after with phosphoric acid solution, the SiON anti-reflection film of PAD figure layer region is carried out again
Corrosion, removes the SiO protective layer of PAD figure layer region respectively2With SiON anti-reflection film, to form groove P and groove N；
In this step, in the phosphoric acid solution of use, phosphoric acid is 1～9:1 with the volume ratio of water, and corrosion temperature is 80 DEG C～200 DEG C,
Etching time is 30～200 seconds.
Step F, at groove P make P electrode 9 and groove N at making N electrode 8.
In a kind of specific embodiment, step A also comprised the steps: before forming transparent conductive layer 5
Step a, on LED epitaxial layer whole deposition current barrier layer 10；
Step b, utilize photoetching and etch away portion of electrical current barrier layer, retaining the current blocking Rotating fields of desirable pattern.
In a kind of specific embodiment, in step B, using plasma strengthens chemical vapor deposition SiON
The thickness range of anti-reflection film 6 is 100～1500 angstroms.
In a kind of specific embodiment, step C uses BOE solution etches SiON anti-reflection film 6.
In a kind of specific embodiment, step E use BOE solution to SiO2The etching time of protective layer is 30～120
Second.
With the epitaxial wafer enclosed, (epitaxial wafer is present to ensure that epitaxial wafer photoelectric parameter with stove with circle with stove to choose six in the present invention
Concordance, it is ensured that the accuracy of this experiment conclusion.Wherein three existing methods of employing of six sheet epitaxy sheets make, the most not
Relate to arranging SiON anti-reflection film and using phosphoric acid solution etching SiON anti-reflection film, other three method systems using the present invention
Make) it is prepared as chip, it is normal that appearance test shows to test chip outward appearance, and puts survey electrical parameter such as table 1:
Table 1
Parameter from above-mentioned table 1: the LED chip structure that the inventive method prepares, due at evaporation transparent
Deposited one layer of SiON anti-reflection film after conductive layer, and before P electrode is set, uses phosphoric acid solution etching SiON anti-reflection film,
Make transparent conductive layer not be corroded in the whole manufacturing process of chip and be stained, improve the matter of transparent conductive layer
Amount.Chip comparison with voltage VF1 that the chip that employing the inventive method prepares and existing method prepare reduces 0.042V, bright
Degree LOP1 improves 1.8mw, and it is 0.91% that brightness improves ratio.Achieve lifting LED luminance and reduce the mesh of voltage simultaneously
's.
In the present invention, choose the complete existing method of employing surveyed near statistical average respectively prepare chip and use side of the present invention
The chip that method prepares is packaged, blue light encapsulation of data such as table 2:
Table 2
Data from above-mentioned table 2: the LED that the LED chip using the inventive method to prepare encapsulates is existing with employing
The LED comparison with voltage of LED chip encapsulation prepared by method reduces 0.042V, and luminous power improves 1.9mw, improves ratio
Example is 0.78%, and luminous efficiency improves 1.1%.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for those skilled in the art
For Yuan, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, any amendment of being made,
Equivalent, improvement etc., should be included within the scope of the present invention.
Claims (9)
1. the preparation method of a LED chip, it is characterised in that comprise the steps:
Step A, comprise n type semiconductor layer (2), luminescent layer (3) and p-type partly lead upper successively formation of substrate (1)
The epitaxial layer of body layer (4) and transparent conductive layer (5)；
Step B, transparent conductive layer (5) one layer of SiON anti-reflection film (6) of upper deposition；
Step C, form the step on n type semiconductor layer (2) by photoetching and etching；Make in the portion of topping bar (21)
Luminescent layer (3), p type semiconductor layer (4), transparent conductive layer (5) and SiON anti-reflection film (6) all retain,
And luminescent layer (3), p type semiconductor layer (4), transparent conductive layer (5) and the SiON on stepped down part (22)
Anti-reflection film (6) is all etched removal；
Step D, on the LED of the stepped down part (22) including SiON anti-reflection film (6) and n type semiconductor layer is whole
Whole of surface forms one layer of SiO2Protective layer (7)；
Step E, by photoetching and etching SiO2Protective layer (7) and SiON anti-reflection film (6) and at transparent conductive layer
(5) top is formed and is used for arranging the groove P of P electrode (9), and by photoetching and etching SiO2Protective layer (7) is in institute
State stepped down part (22) top and form the groove N being used for arranging N electrode (8)；Wherein, when forming groove P, first
Use BOE solution etches SiO2Protective layer (7), rear use phosphoric acid solution etching SiON anti-reflection film (6)；
Step F, at described groove P make P electrode and described groove N at making N electrode.
The preparation method of LED chip the most according to claim 1, it is characterised in that forming ITO in step A
Also comprise the steps: before transparency conducting layer (5)
Step a, on LED epitaxial layer whole deposition current barrier layer (10)；
Step b, utilize photoetching and etch away portion of electrical current barrier layer, retaining the current blocking Rotating fields of desirable pattern.
The preparation method of LED chip the most according to claim 1, it is characterised in that employing etc. in described step B
It is 100～1500 angstroms that gas ions strengthens the thickness range of chemical vapor deposition SiON anti-reflection film (6).
The preparation method of LED chip the most according to claim 1, it is characterised in that use in described step C
BOE solution etches SiON anti-reflection film (6).
The preparation method of LED chip the most according to claim 4, it is characterised in that use in described step C
BOE solution is 30～120 seconds to the etching period of SiON anti-reflection film (6).
The preparation method of LED chip the most according to claim 1, it is characterised in that use in described step E
In phosphoric acid solution, phosphoric acid is 1～9:1 with the volume ratio of water, and corrosion temperature is 80 DEG C～200 DEG C, and etching time is 30～200 seconds.
7. the LED chip prepared according to method described in any one of claim 1～6, it is characterised in that described LED chip
Include substrate (1), epitaxial layer and electrode successively at thickness direction, and described epitaxial layer includes n type semiconductor layer (2), sends out
Photosphere (3) and p type semiconductor layer (4), n type semiconductor layer (2) is for including the portion of topping bar (21) and stepped down part (22)
Stepped ramp type structure, luminescent layer (3) and p type semiconductor layer (4) be successively set on described in top bar portion (21) top,
Being additionally provided with transparent conductive layer (5) on described p type semiconductor layer (4), described electrode includes being arranged on stepped down part (22)
On N electrode (8) and the P electrode (9) that is arranged on transparent conductive layer (5), the core outside described N electrode
Sheet upper surface deposition has SiO2Protective layer (7), the chip upper surface outside P electrode has been sequentially depositing SiON anti-reflection film (6)
With SiO2 protective layer (7).
A kind of high brightness LED chip, it is characterised in that described SiON anti-reflection film (6)
Thickness be 100～1500 angstroms.
A kind of high brightness LED chip, it is characterised in that described p type semiconductor layer (4)
Being provided with current barrier layer (10), described transparent conductive layer (5) is covered in above described current barrier layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610595189.2A CN106025012A (en) | 2016-07-26 | 2016-07-26 | Preparation method of LED chip and LED chip prepared by adopting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610595189.2A CN106025012A (en) | 2016-07-26 | 2016-07-26 | Preparation method of LED chip and LED chip prepared by adopting method |
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| CN106025012A true CN106025012A (en) | 2016-10-12 |
Family
ID=57114114
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|---|---|---|---|
| CN201610595189.2A Pending CN106025012A (en) | 2016-07-26 | 2016-07-26 | Preparation method of LED chip and LED chip prepared by adopting method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281529A (en) * | 2018-04-04 | 2018-07-13 | 佛山市国星半导体技术有限公司 | A kind of LED chip and preparation method thereof with anti-strike electrode |
| CN108336200A (en) * | 2018-03-27 | 2018-07-27 | 湘能华磊光电股份有限公司 | LED chip structure and preparation method thereof |
| CN110504341A (en) * | 2019-08-14 | 2019-11-26 | 安徽芯瑞达科技股份有限公司 | A kind of LED chip with high stability current barrier layer |
| CN112750922A (en) * | 2019-10-31 | 2021-05-04 | 山东浪潮华光光电子股份有限公司 | Light-emitting diode with variable patterns and preparation method thereof |
| CN112750927A (en) * | 2019-10-31 | 2021-05-04 | 山东浪潮华光光电子股份有限公司 | Light-emitting diode with specific pattern and preparation method thereof |
| WO2022052085A1 (en) * | 2020-09-14 | 2022-03-17 | 厦门乾照光电股份有限公司 | Led chip having modified layer and production method therefor |
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| CN203288594U (en) * | 2013-05-30 | 2013-11-13 | 华南理工大学 | High-voltage LED chip having microstructure reflection reducing coating |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336200A (en) * | 2018-03-27 | 2018-07-27 | 湘能华磊光电股份有限公司 | LED chip structure and preparation method thereof |
| CN108281529A (en) * | 2018-04-04 | 2018-07-13 | 佛山市国星半导体技术有限公司 | A kind of LED chip and preparation method thereof with anti-strike electrode |
| CN110504341A (en) * | 2019-08-14 | 2019-11-26 | 安徽芯瑞达科技股份有限公司 | A kind of LED chip with high stability current barrier layer |
| CN112750922A (en) * | 2019-10-31 | 2021-05-04 | 山东浪潮华光光电子股份有限公司 | Light-emitting diode with variable patterns and preparation method thereof |
| CN112750927A (en) * | 2019-10-31 | 2021-05-04 | 山东浪潮华光光电子股份有限公司 | Light-emitting diode with specific pattern and preparation method thereof |
| CN112750922B (en) * | 2019-10-31 | 2021-12-07 | 山东浪潮华光光电子股份有限公司 | Light-emitting diode with variable patterns and preparation method thereof |
| WO2022052085A1 (en) * | 2020-09-14 | 2022-03-17 | 厦门乾照光电股份有限公司 | Led chip having modified layer and production method therefor |
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