WO2022052085A1 - Led chip having modified layer and production method therefor - Google Patents

Led chip having modified layer and production method therefor Download PDF

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Publication number
WO2022052085A1
WO2022052085A1 PCT/CN2020/114973 CN2020114973W WO2022052085A1 WO 2022052085 A1 WO2022052085 A1 WO 2022052085A1 CN 2020114973 W CN2020114973 W CN 2020114973W WO 2022052085 A1 WO2022052085 A1 WO 2022052085A1
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Prior art keywords
layer
led chip
insulating
transparent conductive
modified
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PCT/CN2020/114973
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French (fr)
Chinese (zh)
Inventor
黄瑄
刘英策
邬新根
刘伟
周弘毅
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厦门乾照光电股份有限公司
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Priority to PCT/CN2020/114973 priority Critical patent/WO2022052085A1/en
Publication of WO2022052085A1 publication Critical patent/WO2022052085A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Definitions

  • the present invention relates to the technical field of optoelectronics, and more particularly, to an LED chip with a modified layer and a manufacturing method thereof.
  • the LED chip is the core component of the LED, which is used to convert electrical energy into light energy by releasing energy through the recombination of electrons and holes under the control of voltage.
  • the bonding stability between the transparent conductive layer and the insulating layer in contact with the existing LED chip is poor.
  • the interface between the transparent conductive layer and the insulating layer is less stable due to the bonding stability. If it is poor, it will become a weak area of the LED chip, which will further reduce the structural stability of the LED chip.
  • the present invention provides an LED chip with a modified layer and a manufacturing method thereof.
  • the technical solutions are as follows:
  • An LED chip with a modified layer comprising:
  • a transparent conductive layer, a modified layer and an insulating protective layer are sequentially arranged on the side of the epitaxial layer structure away from the substrate, and the modified layer is located between the transparent conductive layer and the insulating protective layer.
  • the epitaxial layer structure includes:
  • the N-type semiconductor layer, the active layer and the P-type semiconductor layer are arranged in sequence in the first direction, the epitaxial layer structure further includes a first groove structure for exposing the N-type semiconductor layer in a predetermined area, the first direction is perpendicular to the substrate and is directed from the substrate to the epitaxial layer structure;
  • the transparent conductive layer and the modified layer are sequentially disposed on the side of the P-type semiconductor layer away from the substrate.
  • the LED chip further includes:
  • a second groove structure penetrating the modified layer is used to expose the transparent conductive layer.
  • the LED chip further includes:
  • a fourth groove structure penetrating the insulating protection layer is used to expose the N-type semiconductor layer.
  • the LED chip further includes:
  • the LED chip further includes:
  • a metal contact layer disposed on the transparent conductive layer.
  • the LED chip further includes:
  • the LED chip further includes:
  • the P electrode is in contact with the P-type semiconductor layer through the fifth groove structure and the sixth groove structure, and the P electrode also covers the exposed area of the transparent conductive layer;
  • the LED chip further includes:
  • a metal contact layer disposed between the P-type semiconductor layer and the P-electrode.
  • the modified layer is an insulating modified layer or a conductive modified layer
  • the insulating modified layer at least contains MgF, MgO, BeO, TiO x , CrO 2 , ZrO 2 , HfO 2 , Ni 2 O 3 , SiO 2 , Al 2 O 3 , B 2 O 3 , In 2 O 3 , GeO 2.
  • One or more of SnO 2 and SiN x are mixed;
  • the conductive modification layer at least contains Al-doped ZnO or Sn-doped ln 2 O 3 .
  • the insulating modified layer is a multi-layer structure
  • the insulating modified layer includes: a basic insulating layer on one side adjacent to the substrate, and other film layers disposed on the side of the basic insulating layer away from the substrate;
  • the other film layers are insulating layers or non-insulating layers or stacked film layers;
  • the stacked film layer is a stacked film layer of multiple insulating layers, or a stacked film layer of multiple non-insulating layers, or a stacked film layer of a non-insulating layer and an insulating layer.
  • the materials of the basic insulating layer and the insulating layer are MgF, MgO, BeO, TiO x , CrO 2 , ZrO 2 , HfO 2 , Ni 2 O 3 , SiO 2 , Al One of 2 O 3 , B 2 O 3 , In 2 O 3 , GeO 2 , SnO 2 and SiN x ;
  • the material of the non-insulating layer is a material with a forbidden band width of 0, or a material with a forbidden band width of less than 4.0V;
  • the non-insulating layer is a high reflection layer, and the material of the high reflection layer is one or more of Ag, Al, Ti, Pt, Au, Cu and Mo.
  • the modified layer and the transparent conductive layer have a whole film structure.
  • the LED chip further includes:
  • the eighth groove structure penetrates through the insulating protection layer for exposing the N-type semiconductor layer.
  • the LED chip further includes:
  • a metal contact layer disposed on the modified layer.
  • the modified layer is a conductive modified layer
  • the conductive modification layer at least contains Al-doped ZnO or Sn-doped ln 2 O 3 .
  • the lattice parameter of the modified layer is between the lattice parameter of the transparent conductive layer and the lattice parameter of the insulating protective layer.
  • the thermal expansion coefficient of the modified layer is between the thermal expansion coefficient of the transparent conductive layer and the thermal expansion coefficient of the insulating protective layer.
  • a manufacturing method of an LED chip with a modified layer comprising:
  • An epitaxial layer structure is grown on the substrate, the epitaxial layer structure includes an N-type semiconductor layer, an active layer and a P-type semiconductor layer sequentially grown in a first direction, and the epitaxial layer structure further includes a first groove a structure for exposing the N-type semiconductor layer in a predetermined area, the first direction is perpendicular to the substrate, and is directed from the substrate to the direction of the epitaxial layer structure;
  • a transparent conductive layer, a modified layer and an insulating protective layer are sequentially formed on the side of the P-type semiconductor layer away from the substrate, and the modified layer is located between the transparent conductive layer and the insulating protective layer.
  • the modified layer and the transparent conductive layer use the same photolithography process.
  • the LED chip with a modified layer provided by the present invention not only improves the adhesion of the chip structure, but also can be used as a hard mask for the transparent conductive layer to improve the defects of irregular edges in the etching of the transparent conductive layer material. Improve chip electrostatic breakdown reliability.
  • the material of the modified layer is selected from the material whose lattice size is between the transparent conductive layer and the insulating protective layer, and has good light transmittance, mainly oxide materials, such as SiO 2 , TiO 2 , ZrO 2 , ZnO .
  • FIG. 1 is a schematic structural diagram of an LED chip with a modified layer provided by an embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
  • FIG. 7 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
  • FIG. 8 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
  • FIG. 9 is a schematic flowchart of a method for manufacturing an LED chip with a modified layer provided by an embodiment of the present invention.
  • 10-17 are schematic structural diagrams corresponding to the manufacturing method shown in FIG. 9 .
  • FIG. 1 is a schematic structural diagram of an LED chip with a modified layer provided by an embodiment of the present invention.
  • the LED chip includes:
  • the transparent conductive layer 15, the modified layer 16 and the insulating protective layer 17 are sequentially arranged on the side of the epitaxial layer structure away from the substrate 11, and the modified layer 16 is located on the transparent conductive layer 15 and the insulating protective layer. between layers 17.
  • the epitaxial layer structure includes an N-type semiconductor layer 12 , an active layer 13 and a P-type semiconductor layer 14 arranged in sequence in the first direction, and the epitaxial layer structure further includes a first groove
  • the structure is used to expose the N-type semiconductor layer 12 in a predetermined area, and the first direction is perpendicular to the substrate 11 and is directed from the substrate 11 to the direction of the epitaxial layer structure.
  • the transparent conductive layer 15 and the modified layer 16 are sequentially disposed on the side of the P-type semiconductor layer 12 away from the substrate 11 .
  • the modified layer 16 is used to alleviate the lattice mismatch problem between the transparent conductive layer 15 and the insulating protective layer 17
  • the directly grown modified layer 16 does not destroy the dangling bond state on the surface of the transparent conductive layer 15, so the adhesion between the transparent conductive layer 15 and the modified layer 16 is extremely strong; on the other hand, the modified layer 16
  • the lattice mismatch with the insulating protective layer 17 is small, and the adhesion between the two is good; and by setting the modified layer 16, the adhesion of the transparent conductive layer 15 and the insulating protective layer 17 in contact with it can be greatly improved, thereby improving the Structural stability of LED chips.
  • the modified layer 16 not only improves the structural stability of the LED chip structure, but also serves as a hard mask for the transparent conductive layer 15, thereby improving the defect problem of irregular edges in the etching of the transparent conductive layer 15, thereby improving the efficiency of the transparent conductive layer 15. LED chip electrostatic breakdown reliability.
  • FIG. 1 only illustrates a part of the LED chip structure.
  • FIG. 2 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
  • the LED chip also includes:
  • the second groove structure penetrating the modified layer 16 is used to expose the transparent conductive layer 15 .
  • the metal contact layer 18 disposed on the transparent conductive layer 15 through the second groove structure.
  • a metal contact layer can also be provided on the N-type semiconductor layer 12 through the first groove structure, so as to improve the performance of the LED chip.
  • FIG. 3 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
  • the LED chip also includes:
  • the third groove structure 19 penetrates through the insulating protection layer 17 for exposing the transparent conductive layer 15 .
  • the third groove structure 19 may be used to expose the metal contact layer 18 .
  • the LED chip also includes:
  • the fourth groove structure 20 penetrates through the insulating protection layer 17 for exposing the N-type semiconductor layer 12 .
  • the insulating protective layer 17 is etched to form the third groove structure 19 and the fourth groove structure 20, which are used to expose the transparent conductive layer 15 and the
  • the N-type semiconductor layer 12 is the basis for the subsequent fabrication of the electrode structure.
  • FIG. 4 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
  • the LED chip also includes:
  • the P electrode 21 in contact with the transparent conductive layer 15 through the third groove structure 19;
  • the P electrode 21 is connected to the metal contact layer 18 through the third groove structure 19 ;
  • the N electrode 22 is in contact with the N-type semiconductor layer 12 through the fourth groove structure 20 .
  • the materials of the P electrode 21 and the N electrode 22 may be the same or different, which are not limited herein.
  • FIG. 5 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
  • the LED chip also includes:
  • the opening area of the fifth groove structure 23 is larger than the opening area of the sixth groove 24 for exposing part of the transparent Conductive layer 15 .
  • the center of the fifth groove structure 23 coincides with the center of the sixth groove structure 24 .
  • the opening area of the fifth groove structure 23 and the opening area of the sixth groove 24 are not limited.
  • FIG. 6 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
  • the LED chip also includes:
  • the P electrode 21 also covers the exposed area of the transparent conductive layer 15;
  • the N electrode 22 is in contact with the N-type semiconductor layer 12 through the first groove structure.
  • the materials of the P electrode 21 and the N electrode 22 may be the same or different, which are not limited herein.
  • FIG. 7 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
  • An opening area is provided on the insulating protection layer 17 for exposing the P electrode 21 and the N electrode 22 .
  • the thickness of the insulating protective layer of the LED chip shown in FIG. 7 is thinner.
  • the modified layer 16 is an insulating modified layer or a conductive modified layer
  • the insulating modified layer at least contains MgF, MgO, BeO, TiO x , CrO 2 , ZrO 2 , HfO 2 , Ni 2 O 3 , SiO 2 , Al 2 O 3 , B 2 O 3 , In 2 O 3 , GeO 2.
  • One or more of SnO 2 and SiN x are mixed;
  • the conductive modification layer at least contains Al-doped ZnO or Sn-doped ln 2 O 3 .
  • the modified layer 16 is an insulating modified layer or a conductive modified layer of a separate film.
  • the insulation modification layer is a multi-layer structure
  • the insulating modified layer includes: a basic insulating layer adjacent to the side of the substrate 11, and other film layers disposed on the side of the basic insulating layer away from the substrate 11;
  • the other film layers are insulating layers or non-insulating layers or stacked film layers;
  • the stacked film layer is a stacked film layer of multiple insulating layers, or a stacked film layer of multiple non-insulating layers, or a stacked film layer of a non-insulating layer and an insulating layer.
  • the insulation modification layer is a multi-layer structure
  • the first film layer on the side adjacent to the substrate 11 must be an insulating material layer.
  • the materials of the basic insulating layer and the insulating layer are MgF, MgO, BeO, TiO x , CrO 2 , ZrO 2 , HfO 2 , Ni 2 O 3 , SiO 2 , Al 2 O 3 , B 2 O 3 One of , In 2 O 3 , GeO 2 , SnO 2 and SiN x ;
  • the material of the non-insulating layer is a material with a forbidden band width of 0, or a material with a forbidden band width of less than 4.0V; it is sufficient to excite electrons from the valence band to the conduction band at room temperature.
  • the non-insulating layer is a high reflection layer, and the material of the high reflection layer is one or more of Ag, Al, Ti, Pt, Au, Cu and Mo.
  • the stacked film layer is a DBR stacked structure of TiO x and SiO 2 .
  • the first film layer on the side adjacent to the substrate 11 must be an insulating material layer, and the other layers can use film layers of different materials, and then play a different role.
  • the light extraction rate of the LED chip can be improved.
  • Using high dielectric materials, such as HfO 2 can improve the stability of the insulating layer and avoid the interference of the electric field.
  • high temperature resistant materials such as ZrO 2
  • ZrO 2 can improve the high temperature resistance capability of the LED chip.
  • FIG. 8 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
  • the modified layer 16 and the transparent conductive layer 15 are a whole film structure.
  • the seventh groove structure only needs to expose the metal contact layer 18 ;
  • the eighth groove structure penetrates through the insulating protection layer 17 for exposing the N-type semiconductor layer 12 .
  • the P electrode 21 in contact with the modified layer 16 through the seventh groove structure
  • the P electrode 21 is in contact with the metal contact layer 18 ;
  • the N electrode 22 in contact with the N-type semiconductor layer 12 through the eighth groove structure.
  • the modified layer 16 when the modified layer 16 is a whole film layer, the modified layer 16 must be a conductive modified layer;
  • the conductive modification layer at least contains Al-doped ZnO or Sn-doped ln 2 O 3 .
  • the modified layer 16 improves the chip interface stability by 10%.
  • the lattice parameter of the modified layer 16 is between the lattice parameter of the transparent conductive layer 15 and the lattice parameter of the insulating protective layer 17 .
  • the thermal expansion coefficient of the modified layer 16 is between the thermal expansion coefficient of the transparent conductive layer 15 and the thermal expansion coefficient of the insulating protective layer 17 .
  • the modified layer 16 which is mainly an oxide material, including but not limited to SiO 2 or TiO 2 or ZrO 2 or ZnO.
  • metal contact layer 18 needs to be provided with a current expansion bar may be determined according to actual requirements, which is not limited in the embodiment of the present invention.
  • FIG. 9 is a method provided by an embodiment of the present invention. A schematic flowchart of a method for manufacturing an LED chip with a modified layer.
  • the manufacturing method includes:
  • the substrate 11 includes but is not limited to a GaAs substrate.
  • the epitaxial layer structure includes an N-type semiconductor layer 12 , an active layer 13 and a P-type semiconductor layer 14 sequentially grown in the first direction , the epitaxial layer structure further includes a first groove structure 25 for exposing the N-type semiconductor layer 12 in a predetermined area, the first direction is perpendicular to the substrate 11, and is formed by the lining Bottom 11 points in the direction of the epitaxial layer structure.
  • the N-type semiconductor layer 12 is an N-type gallium nitride layer
  • the P-type semiconductor layer 14 is a P-type gallium nitride layer.
  • a predetermined region of the epitaxial layer structure is etched until the N-type semiconductor layer 12 is exposed.
  • a transparent conductive layer 15 and a modified layer 16 are sequentially formed on the side of the P-type semiconductor layer 14 away from the substrate.
  • an insulating protective layer 17 is formed on the side of the epitaxial layer structure away from the substrate 11 , and the modified layer 16 is located between the transparent conductive layer 15 and the insulating protective layer 17 between.
  • the modified layer 16 is used to alleviate the lattice mismatch problem between the transparent conductive layer 15 and the insulating protective layer 17
  • the directly grown modified layer 16 does not destroy the dangling bond state on the surface of the transparent conductive layer 15, so the adhesion between the transparent conductive layer 15 and the modified layer 16 is extremely strong; on the other hand, the modified layer 16
  • the lattice mismatch with the insulating protective layer 17 is small, and the adhesion between the two is good; and by setting the modified layer 16, the adhesion of the transparent conductive layer 15 and the insulating protective layer 17 in contact with it can be greatly improved, thereby improving the Structural stability of LED chips.
  • the modified layer 16 not only improves the structural stability of the LED chip structure, but also serves as a hard mask for the transparent conductive layer 15, thereby improving the defect problem of irregular edges in the etching of the transparent conductive layer 15, thereby improving the LED chip electrostatic breakdown reliability.
  • step S103 in the manufacturing method is specifically:
  • the transparent conductive layer 15 is first grown on the side of the epitaxial layer structure away from the substrate 11 .
  • the modified layer 16 is grown on the side of the transparent conductive layer 15 away from the substrate 11.
  • the modified layer 16 and the transparent conductive layer 15 are subjected to photolithography by using the same photolithography process to expose the region where the first groove structure 25 is located.
  • photolithography is performed on the modified layer 16 to form a second groove structure 27 for exposing the transparent conductive layer 15 .
  • the manufacturing method further includes:
  • a metal contact layer 18 is formed on the transparent conductive layer 15 by the second groove structure 27 .
  • an insulating protection layer 17 is formed on the side of the epitaxial layer structure away from the substrate 11 .
  • the manufacturing method further includes:
  • the insulating protection layer 17 is etched to form a third groove structure 19 and a fourth groove structure 20 for exposing the metal contact layer 18 and the N-type semiconductor layer 12 .
  • the manufacturing method further includes:
  • a contact P electrode 21 is formed on the metal contact layer 18 through the third groove structure 19 ; a contact is formed on the N-type semiconductor layer 12 through the fourth groove structure 20 the N electrode 22.
  • step S103 in the manufacturing method may also be specifically:
  • the transparent conductive layer 15 is first grown on the side of the epitaxial layer structure away from the substrate 11 .
  • the modified layer 16 is grown on the side of the transparent conductive layer 15 away from the substrate 11 .
  • the modified layer 16 and the transparent conductive layer 15 are subjected to photolithography by using the same photolithography process to expose the region where the first groove structure 25 is located.
  • photolithography is performed on the modified layer 16 and the transparent conductive layer 15 again to form a sixth groove structure 24 for exposing the P-type semiconductor layer 14 .
  • the center of the fifth groove structure 23 coincides with the center of the sixth groove structure 24 .
  • the manufacturing method further includes:
  • a contacting P electrode 21 is formed on the P-type semiconductor layer 14 through the fifth groove structure 23 and the sixth groove structure 24 , and the P electrode 21 also covers the transparent The area where the conductive layer 15 is exposed.
  • a contact N electrode 22 is formed on the N-type semiconductor layer 12 through the first groove structure 25 .
  • an insulating protection layer 17 is formed on the side of the epitaxial layer structure away from the substrate 11 .
  • the manufacturing method further includes:
  • the insulating protection layer 17 is etched to form an opening area for exposing the P electrode 21 and the N electrode 22 .
  • step S103 in the manufacturing method may also be specifically:
  • the transparent conductive layer 15 is first grown on the side of the epitaxial layer structure away from the substrate 11 .
  • the modified layer 16 is grown on the side of the transparent conductive layer 15 away from the substrate 11 .
  • the modified layer 16 and the transparent conductive layer 15 are subjected to photolithography by using the same photolithography process to expose the region where the first groove structure 25 is located.
  • a metal contact layer 18 is provided on the modified layer 16 .
  • the insulating protection layer 17 is etched to form a seventh groove structure and an eighth groove structure for exposing the metal contact layer 18 and the N-type semiconductor layer 12 .
  • a contacting P electrode 21 is formed on the metal contact layer 18 through the seventh groove structure; an N contacting N-type semiconductor layer 12 is formed through the eighth groove structure electrode 22.
  • the P electrode 21 is in contact with the modified layer 16 .

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Abstract

The present invention provides an LED chip having a modified layer and a production method therefor, capable of improving the adhesion of a chip structure and being used as a hard mask of a transparent conductive layer to improve the defect of irregular etching edges of the material of the transparent conductive layer, thereby improving the reliability of the chip against electrostatic breakdown. In addition, the material of the modified layer has a lattice size between that of the material of the transparent conductive layer and the material of an insulating protective layer, has good light transmittance, and is mainly selected from oxide materials such as SiO2, TiO2, ZrO2, and ZnO.

Description

一种具有改性层的LED芯片及其制作方法A kind of LED chip with modified layer and its production method 技术领域technical field
本发明涉及光电子技术领域，更具体地说，涉及一种具有改性层的LED芯片及其制作方法。The present invention relates to the technical field of optoelectronics, and more particularly, to an LED chip with a modified layer and a manufacturing method thereof.
背景技术Background technique
随着LED技术的发展，LED的应用越来越普遍，已逐渐成为照明、显示等领域必不可少的发光元件。具体的，LED芯片是LED的核心组件，用于在电压的控制下，通过电子和空穴的复合释放能量，将电能转换为光能。With the development of LED technology, the application of LED is more and more common, and it has gradually become an indispensable light-emitting element in lighting, display and other fields. Specifically, the LED chip is the core component of the LED, which is used to convert electrical energy into light energy by releasing energy through the recombination of electrons and holes under the control of voltage.
但是，现有LED芯片中透明导电层和与其接触的绝缘层之间的粘结稳定性较差，在长时间的使用过程中，透明导电层和绝缘层之间的界面，由于粘结稳定较差，会变成LED芯片的薄弱区域，进而会降低LED芯片的结构稳定性较低。However, the bonding stability between the transparent conductive layer and the insulating layer in contact with the existing LED chip is poor. During long-term use, the interface between the transparent conductive layer and the insulating layer is less stable due to the bonding stability. If it is poor, it will become a weak area of the LED chip, which will further reduce the structural stability of the LED chip.
发明内容SUMMARY OF THE INVENTION
有鉴于此，为解决上述问题，本发明提供一种具有改性层的LED芯片及其制作方法，技术方案如下：In view of this, in order to solve the above problems, the present invention provides an LED chip with a modified layer and a manufacturing method thereof. The technical solutions are as follows:
一种具有改性层的LED芯片，所述LED芯片包括：An LED chip with a modified layer, the LED chip comprising:
衬底；substrate;
设置在所述衬底上的外延层结构；an epitaxial layer structure disposed on the substrate;
依次设置在所述外延层结构背离所述衬底一侧的透明导电层、改性层和绝缘保护层，所述改性层位于所述透明导电层和所述绝缘保护层之间。A transparent conductive layer, a modified layer and an insulating protective layer are sequentially arranged on the side of the epitaxial layer structure away from the substrate, and the modified layer is located between the transparent conductive layer and the insulating protective layer.
可选的，在上述LED芯片中，所述外延层结构包括：Optionally, in the above LED chip, the epitaxial layer structure includes:
在第一方向上依次设置的N型半导体层、有源层和P型半导体层，所述外延层结构还包括第一凹槽结构，用于在预设区域暴露出所述N型半导 体层，所述第一方向为垂直于所述衬底，且由所述衬底指向所述外延层结构的方向；The N-type semiconductor layer, the active layer and the P-type semiconductor layer are arranged in sequence in the first direction, the epitaxial layer structure further includes a first groove structure for exposing the N-type semiconductor layer in a predetermined area, the first direction is perpendicular to the substrate and is directed from the substrate to the epitaxial layer structure;
所述透明导电层和所述改性层依次设置在所述P型半导体层背离所述衬底的一侧。The transparent conductive layer and the modified layer are sequentially disposed on the side of the P-type semiconductor layer away from the substrate.
可选的，在上述LED芯片中，所述LED芯片还包括：Optionally, in the above LED chip, the LED chip further includes:
贯穿所述改性层的第二凹槽结构，用于暴露出所述透明导电层。A second groove structure penetrating the modified layer is used to expose the transparent conductive layer.
可选的，在上述LED芯片中，所述LED芯片还包括：Optionally, in the above LED chip, the LED chip further includes:
贯穿所述绝缘保护层的第三凹槽结构，用于暴露出所述透明导电层；a third groove structure penetrating the insulating protective layer for exposing the transparent conductive layer;
贯穿所述绝缘保护层的第四凹槽结构，用于暴露出所述N型半导体层。A fourth groove structure penetrating the insulating protection layer is used to expose the N-type semiconductor layer.
可选的，在上述LED芯片中，所述LED芯片还包括：Optionally, in the above LED chip, the LED chip further includes:
通过所述第三凹槽结构与所述透明导电层接触的P电极；A P electrode in contact with the transparent conductive layer through the third groove structure;
通过所述第四凹槽结构与所述N型半导体层接触的N电极。An N electrode in contact with the N-type semiconductor layer through the fourth groove structure.
可选的，在上述LED芯片中，所述LED芯片还包括：Optionally, in the above LED chip, the LED chip further includes:
设置在所述透明导电层上的金属接触层。A metal contact layer disposed on the transparent conductive layer.
可选的，在上述LED芯片中，所述LED芯片还包括：Optionally, in the above LED chip, the LED chip further includes:
贯穿所述改性层的第五凹槽结构，以及贯穿所述透明导电层的第六凹槽结构。A fifth groove structure penetrating the modified layer, and a sixth groove structure penetrating the transparent conductive layer.
可选的，在上述LED芯片中，所述LED芯片还包括：Optionally, in the above LED chip, the LED chip further includes:
通过所述第五凹槽结构和所述第六凹槽结构与所述P型半导体层接触的P电极，所述P电极还覆盖所述透明导电层暴露出的区域；The P electrode is in contact with the P-type semiconductor layer through the fifth groove structure and the sixth groove structure, and the P electrode also covers the exposed area of the transparent conductive layer;
通过所述第一凹槽结构与所述N型半导体层接触的N电极。An N electrode in contact with the N-type semiconductor layer through the first groove structure.
可选的，在上述LED芯片中，所述LED芯片还包括：Optionally, in the above LED chip, the LED chip further includes:
设置在所述P型半导体层和所述P电极之间的金属接触层。A metal contact layer disposed between the P-type semiconductor layer and the P-electrode.
可选的，在上述LED芯片中，所述改性层为绝缘改性层或导电改性层；Optionally, in the above-mentioned LED chip, the modified layer is an insulating modified layer or a conductive modified layer;
所述绝缘改性层至少包含MgF、MgO、BeO、TiO x、CrO 2、ZrO 2、HfO 2、Ni 2O 3、SiO 2、Al 2O 3、B 2O 3、In 2O 3、GeO 2、SnO 2和SiN x中的一种或多种混合； The insulating modified layer at least contains MgF, MgO, BeO, TiO x , CrO 2 , ZrO 2 , HfO 2 , Ni 2 O 3 , SiO 2 , Al 2 O 3 , B 2 O 3 , In 2 O 3 , GeO 2. One or more of SnO 2 and SiN x are mixed;
所述导电改性层至少包含掺杂Al的ZnO或掺杂Sn的ln 2O 3。 The conductive modification layer at least contains Al-doped ZnO or Sn-doped ln 2 O 3 .
可选的，在上述LED芯片中，所述绝缘改性层为多层结构；Optionally, in the above LED chip, the insulating modified layer is a multi-layer structure;
所述绝缘改性层包括：相邻所述衬底一侧的基础绝缘层，以及设置在所述基础绝缘层背离所述衬底一侧的其它膜层；The insulating modified layer includes: a basic insulating layer on one side adjacent to the substrate, and other film layers disposed on the side of the basic insulating layer away from the substrate;
其中，所述其它膜层为绝缘层或非绝缘层或堆叠膜层；Wherein, the other film layers are insulating layers or non-insulating layers or stacked film layers;
所述堆叠膜层为多层绝缘层的堆叠膜层，或多层非绝缘层的堆叠膜层，或非绝缘层和绝缘层的堆叠膜层。The stacked film layer is a stacked film layer of multiple insulating layers, or a stacked film layer of multiple non-insulating layers, or a stacked film layer of a non-insulating layer and an insulating layer.
可选的，在上述LED芯片中，所述基础绝缘层和所述绝缘层的材料为MgF、MgO、BeO、TiO x、CrO 2、ZrO 2、HfO 2、Ni 2O 3、SiO 2、Al 2O 3、B 2O 3、In 2O 3、GeO 2、SnO 2和SiN x中的一种； Optionally, in the above LED chip, the materials of the basic insulating layer and the insulating layer are MgF, MgO, BeO, TiO x , CrO 2 , ZrO 2 , HfO 2 , Ni 2 O 3 , SiO 2 , Al One of 2 O 3 , B 2 O 3 , In 2 O 3 , GeO 2 , SnO 2 and SiN x ;
所述非绝缘层的材料为禁带宽度为0的材料，或禁带宽度小于4.0V的材料；The material of the non-insulating layer is a material with a forbidden band width of 0, or a material with a forbidden band width of less than 4.0V;
所述非绝缘层为高反射层，所述高反射层的材料为Ag、Al、Ti、Pt、Au、Cu和Mo中的一种或多种。The non-insulating layer is a high reflection layer, and the material of the high reflection layer is one or more of Ag, Al, Ti, Pt, Au, Cu and Mo.
可选的，在上述LED芯片中，所述改性层和所述透明导电层为一整面膜层结构。Optionally, in the above-mentioned LED chip, the modified layer and the transparent conductive layer have a whole film structure.
可选的，在上述LED芯片中，所述LED芯片还包括：Optionally, in the above LED chip, the LED chip further includes:
贯穿所述绝缘保护层的第七凹槽结构，用于暴露出所述改性层；a seventh groove structure penetrating the insulating protective layer for exposing the modified layer;
贯穿所述绝缘保护层的第八凹槽结构，用于暴露出所述N型半导体层。The eighth groove structure penetrates through the insulating protection layer for exposing the N-type semiconductor layer.
可选的，在上述LED芯片中，所述LED芯片还包括：Optionally, in the above LED chip, the LED chip further includes:
设置在所述改性层上的金属接触层。A metal contact layer disposed on the modified layer.
可选的，在上述LED芯片中，所述改性层为导电改性层；Optionally, in the above LED chip, the modified layer is a conductive modified layer;
所述导电改性层至少包含掺杂Al的ZnO或掺杂Sn的ln 2O 3。 The conductive modification layer at least contains Al-doped ZnO or Sn-doped ln 2 O 3 .
可选的，在上述LED芯片中，所述改性层的晶格参数介于所述透明导电层的晶格参数和所述绝缘保护层的晶格参数之间。Optionally, in the above LED chip, the lattice parameter of the modified layer is between the lattice parameter of the transparent conductive layer and the lattice parameter of the insulating protective layer.
可选的，在上述LED芯片中，所述改性层的热膨胀系数介于所述透明导电层的热膨胀系数和所述绝缘保护层的热膨胀系数之间。Optionally, in the above LED chip, the thermal expansion coefficient of the modified layer is between the thermal expansion coefficient of the transparent conductive layer and the thermal expansion coefficient of the insulating protective layer.
一种具有改性层的LED芯片的制作方法，所述制作方法包括：A manufacturing method of an LED chip with a modified layer, the manufacturing method comprising:
提供一衬底；providing a substrate;
在所述衬底上生长外延层结构，所述外延层结构包括在第一方向上依次生长的N型半导体层、有源层和P型半导体层，所述外延层结构还包括第一凹槽结构，用于在预设区域暴露出所述N型半导体层，所述第一方向为垂直于所述衬底，且由所述衬底指向所述外延层结构的方向；An epitaxial layer structure is grown on the substrate, the epitaxial layer structure includes an N-type semiconductor layer, an active layer and a P-type semiconductor layer sequentially grown in a first direction, and the epitaxial layer structure further includes a first groove a structure for exposing the N-type semiconductor layer in a predetermined area, the first direction is perpendicular to the substrate, and is directed from the substrate to the direction of the epitaxial layer structure;
在所述P型半导体层背离所述衬底的一侧依次形成透明导电层、改性层和绝缘保护层，所述改性层位于所述透明导电层和所述绝缘保护层之间。A transparent conductive layer, a modified layer and an insulating protective layer are sequentially formed on the side of the P-type semiconductor layer away from the substrate, and the modified layer is located between the transparent conductive layer and the insulating protective layer.
可选的，在上述制作方法中，所述改性层和所述透明导电层采用同一道光刻工序。Optionally, in the above manufacturing method, the modified layer and the transparent conductive layer use the same photolithography process.
相较于现有技术，本发明实现的有益效果为：Compared with the prior art, the beneficial effects realized by the present invention are:
本发明提供的一种具有改性层的LED芯片，不仅提高了芯片结构的粘附性，而且同时能作为透明导电层的硬掩膜，改善透明导电层材料蚀刻边缘不规则的缺陷，如此可提高芯片静电击穿可靠性。The LED chip with a modified layer provided by the present invention not only improves the adhesion of the chip structure, but also can be used as a hard mask for the transparent conductive layer to improve the defects of irregular edges in the etching of the transparent conductive layer material. Improve chip electrostatic breakdown reliability.
并且，该改性层的材料选用晶格大小介于透明导电层和绝缘保护层的材料之间，透光性较好，主要是氧化物材料，例如，SiO 2、TiO 2、ZrO 2、ZnO。 In addition, the material of the modified layer is selected from the material whose lattice size is between the transparent conductive layer and the insulating protective layer, and has good light transmittance, mainly oxide materials, such as SiO 2 , TiO 2 , ZrO 2 , ZnO .
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only It is an embodiment of the present invention. For those of ordinary skill in the art, other drawings can also be obtained according to the provided drawings without creative work.
图1为本发明实施例提供的一种具有改性层的LED芯片的结构示意图；1 is a schematic structural diagram of an LED chip with a modified layer provided by an embodiment of the present invention;
图2为本发明实施例提供的另一种具有改性层的LED芯片的结构示意图；2 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention;
图3为本发明实施例提供的又一种具有改性层的LED芯片的结构示意图；3 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention;
图4为本发明实施例提供的又一种具有改性层的LED芯片的结构示意图；4 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention;
图5为本发明实施例提供的又一种具有改性层的LED芯片的结构示意图；5 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention;
图6为本发明实施例提供的又一种具有改性层的LED芯片的结构示意图；6 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention;
图7为本发明实施例提供的又一种具有改性层的LED芯片的结构示意图；7 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention;
图8为本发明实施例提供的又一种具有改性层的LED芯片的结构示意图；8 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention;
图9为本发明实施例提供的一种具有改性层的LED芯片的制作方法的流程示意图；9 is a schematic flowchart of a method for manufacturing an LED chip with a modified layer provided by an embodiment of the present invention;
图10-图17为图9所示制作方法相对应的结构示意图。10-17 are schematic structural diagrams corresponding to the manufacturing method shown in FIG. 9 .
具体实施方式detailed description
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图和具体实施方式对本发明作进一步详细的说明。In order to make the above objects, features and advantages of the present invention more clearly understood, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.
参考图1，图1为本发明实施例提供的一种具有改性层的LED芯片的结构示意图。Referring to FIG. 1 , FIG. 1 is a schematic structural diagram of an LED chip with a modified layer provided by an embodiment of the present invention.
所述LED芯片包括：The LED chip includes:
衬底11。 Substrate 11 .
设置在所述衬底11上的外延层结构；an epitaxial layer structure disposed on the substrate 11;
依次设置在所述外延层结构背离所述衬底11一侧的透明导电层15、改性层16和绝缘保护层17，所述改性层16位于所述透明导电层15和所述绝缘保护层17之间。The transparent conductive layer 15, the modified layer 16 and the insulating protective layer 17 are sequentially arranged on the side of the epitaxial layer structure away from the substrate 11, and the modified layer 16 is located on the transparent conductive layer 15 and the insulating protective layer. between layers 17.
其中，如图1所示，所述外延层结构包括在第一方向上依次设置的N型半导体层12、有源层13和P型半导体层14，所述外延层结构还包括第一凹槽结构，用于在预设区域暴露出所述N型半导体层12，所述第一方向为垂直于所述衬底11，且由所述衬底11指向所述外延层结构的方向。Wherein, as shown in FIG. 1 , the epitaxial layer structure includes an N-type semiconductor layer 12 , an active layer 13 and a P-type semiconductor layer 14 arranged in sequence in the first direction, and the epitaxial layer structure further includes a first groove The structure is used to expose the N-type semiconductor layer 12 in a predetermined area, and the first direction is perpendicular to the substrate 11 and is directed from the substrate 11 to the direction of the epitaxial layer structure.
所述透明导电层15和所述改性层16依次设置在所述P型半导体层12背离所述衬底11的一侧。The transparent conductive layer 15 and the modified layer 16 are sequentially disposed on the side of the P-type semiconductor layer 12 away from the substrate 11 .
在该实施例中，通过在透明导电层15和绝缘保护层17之间设置改性层16，该改性层16用于缓解透明导电层15和绝缘保护层17之间的晶格失配问题；一方面，直接生长的改性层16没有破坏透明导电层15表面的悬挂键状态，所以透明导电层15和改性层16之间的粘附性极强；另一方面，改性层16和绝缘保护层17的晶格失配较小，二者的粘附性良好；进而通过设置改性层16，可以大大提高透明导电层15与其接触的绝缘保护层17的粘附性，进而提高LED芯片的结构稳定性。In this embodiment, by disposing the modified layer 16 between the transparent conductive layer 15 and the insulating protective layer 17 , the modified layer 16 is used to alleviate the lattice mismatch problem between the transparent conductive layer 15 and the insulating protective layer 17 On the one hand, the directly grown modified layer 16 does not destroy the dangling bond state on the surface of the transparent conductive layer 15, so the adhesion between the transparent conductive layer 15 and the modified layer 16 is extremely strong; on the other hand, the modified layer 16 The lattice mismatch with the insulating protective layer 17 is small, and the adhesion between the two is good; and by setting the modified layer 16, the adhesion of the transparent conductive layer 15 and the insulating protective layer 17 in contact with it can be greatly improved, thereby improving the Structural stability of LED chips.
并且，该改性层16不仅提高了LED芯片结构的结构稳定性，而且同时还能作为透明导电层15的硬掩膜，进而改善透明导电层15材料蚀刻边缘不规则的缺陷问题，进而可以提高LED芯片静电击穿可靠性。Moreover, the modified layer 16 not only improves the structural stability of the LED chip structure, but also serves as a hard mask for the transparent conductive layer 15, thereby improving the defect problem of irregular edges in the etching of the transparent conductive layer 15, thereby improving the efficiency of the transparent conductive layer 15. LED chip electrostatic breakdown reliability.
需要说明的是，如图1所示的LED芯片结构仅仅只图示了部分LED芯片结构。It should be noted that the LED chip structure shown in FIG. 1 only illustrates a part of the LED chip structure.
进一步的，基于本发明上述实施例，参考图2，图2为本发明实施例提供的另一种具有改性层的LED芯片的结构示意图。Further, based on the above-mentioned embodiment of the present invention, referring to FIG. 2 , FIG. 2 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
所述LED芯片还包括：The LED chip also includes:
贯穿所述改性层16的第二凹槽结构，用于暴露出所述透明导电层15。The second groove structure penetrating the modified layer 16 is used to expose the transparent conductive layer 15 .
通过所述第二凹槽结构设置在所述透明导电层15上的金属接触层18。The metal contact layer 18 disposed on the transparent conductive layer 15 through the second groove structure.
在该实施例中，还可以通过所述第一凹槽结构，在所述N型半导体层12上也同样设置金属接触层，用于提高LED芯片的性能。In this embodiment, a metal contact layer can also be provided on the N-type semiconductor layer 12 through the first groove structure, so as to improve the performance of the LED chip.
进一步的，基于本发明上述实施例，参考图3，图3为本发明实施例提供的又一种具有改性层的LED芯片的结构示意图。Further, based on the above-mentioned embodiment of the present invention, referring to FIG. 3 , FIG. 3 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
所述LED芯片还包括：The LED chip also includes:
贯穿所述绝缘保护层17的第三凹槽结构19，用于暴露出所述透明导电层15。The third groove structure 19 penetrates through the insulating protection layer 17 for exposing the transparent conductive layer 15 .
如图3所示，当所述LED芯片设置有金属接触层18时，则所述第三凹槽结构19用于暴露出所述金属接触层18即可。As shown in FIG. 3 , when the LED chip is provided with the metal contact layer 18 , the third groove structure 19 may be used to expose the metal contact layer 18 .
所述LED芯片还包括：The LED chip also includes:
贯穿所述绝缘保护层17的第四凹槽结构20，用于暴露出所述N型半导体层12。The fourth groove structure 20 penetrates through the insulating protection layer 17 for exposing the N-type semiconductor layer 12 .
在该实施例中，通过对所述绝缘保护层17进行蚀刻，以形成所述第三凹槽结构19和所述第四凹槽结构20，分别用于暴露出所述透明导电层15和所述N型半导体层12，为后续制作电极结构做基础。In this embodiment, the insulating protective layer 17 is etched to form the third groove structure 19 and the fourth groove structure 20, which are used to expose the transparent conductive layer 15 and the The N-type semiconductor layer 12 is the basis for the subsequent fabrication of the electrode structure.
进一步的，基于本发明上述实施例，参考图4，图4为本发明实施例提供的又一种具有改性层的LED芯片的结构示意图。Further, based on the above-mentioned embodiment of the present invention, referring to FIG. 4 , FIG. 4 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
所述LED芯片还包括：The LED chip also includes:
通过所述第三凹槽结构19与所述透明导电层15接触的P电极21；The P electrode 21 in contact with the transparent conductive layer 15 through the third groove structure 19;
如图4所示，当所述LED芯片设置有金属接触层18时，则通过所述第三凹槽结构19，P电极21与金属接触层18进行接触连接；As shown in FIG. 4 , when the LED chip is provided with the metal contact layer 18 , the P electrode 21 is connected to the metal contact layer 18 through the third groove structure 19 ;
通过所述第四凹槽结构20与所述N型半导体层12接触的N电极22。The N electrode 22 is in contact with the N-type semiconductor layer 12 through the fourth groove structure 20 .
在该实施例中，所述P电极21和所述N电极22的材料可以相同，也可以不相同，在此并不作限定。In this embodiment, the materials of the P electrode 21 and the N electrode 22 may be the same or different, which are not limited herein.
进一步的，在本发明另一实施例中，参考图5，图5为本发明实施例提供的又一种具有改性层的LED芯片的结构示意图。Further, in another embodiment of the present invention, referring to FIG. 5 , FIG. 5 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
所述LED芯片还包括：The LED chip also includes:
贯穿所述改性层16的第五凹槽结构23，以及贯穿所述透明导电层15的第六凹槽结构24；a fifth groove structure 23 penetrating the modified layer 16, and a sixth groove structure 24 penetrating the transparent conductive layer 15;
需要说明的是，当所述改性层16为绝缘改性层时，所述第五凹槽结构23的开口区域大于所述第六凹槽24的开口区域，用于暴露出部分所述透明导电层15。It should be noted that when the modified layer 16 is an insulating modified layer, the opening area of the fifth groove structure 23 is larger than the opening area of the sixth groove 24 for exposing part of the transparent Conductive layer 15 .
在该实施例中，所述第五凹槽结构23的中心和所述第六凹槽结构24的中心重合。In this embodiment, the center of the fifth groove structure 23 coincides with the center of the sixth groove structure 24 .
当所述改性层16为导电改性层时，则第五凹槽结构23的开口区域和所述第六凹槽24的开口区域不进行限定。When the modified layer 16 is a conductive modified layer, the opening area of the fifth groove structure 23 and the opening area of the sixth groove 24 are not limited.
进一步的，基于本发明上述实施例，参考图6，图6为本发明实施例提供的又一种具有改性层的LED芯片的结构示意图。Further, based on the above embodiment of the present invention, referring to FIG. 6 , FIG. 6 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
所述LED芯片还包括：The LED chip also includes:
通过所述第五凹槽结构23和所述第六凹槽结构24与所述P型半导体层14接触的P电极21，所述P电极21还覆盖所述透明导电层15暴露出的区域；Through the fifth groove structure 23 and the sixth groove structure 24 and the P electrode 21 in contact with the P-type semiconductor layer 14, the P electrode 21 also covers the exposed area of the transparent conductive layer 15;
通过所述第一凹槽结构与所述N型半导体层12接触的N电极22。The N electrode 22 is in contact with the N-type semiconductor layer 12 through the first groove structure.
在该实施例中，所述P电极21和所述N电极22的材料可以相同，也可以 不相同，在此并不作限定。In this embodiment, the materials of the P electrode 21 and the N electrode 22 may be the same or different, which are not limited herein.
进一步的，基于本发明上述实施例，参考图7，图7为本发明实施例提供的又一种具有改性层的LED芯片的结构示意图。Further, based on the above-mentioned embodiment of the present invention, referring to FIG. 7 , FIG. 7 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
所述绝缘保护层17上设置有开口区域，用于暴露出所述P电极21和所述N电极22。An opening area is provided on the insulating protection layer 17 for exposing the P electrode 21 and the N electrode 22 .
在该实施例中，相比较图4所示的LED芯片，图7中所示LED芯片的绝缘保护层的厚度较薄。In this embodiment, compared with the LED chip shown in FIG. 4 , the thickness of the insulating protective layer of the LED chip shown in FIG. 7 is thinner.
进一步的，基于本发明上述实施例，所述改性层16为绝缘改性层或导电改性层；Further, based on the above embodiments of the present invention, the modified layer 16 is an insulating modified layer or a conductive modified layer;
所述绝缘改性层至少包含MgF、MgO、BeO、TiO x、CrO 2、ZrO 2、HfO 2、Ni 2O 3、SiO 2、Al 2O 3、B 2O 3、In 2O 3、GeO 2、SnO 2和SiN x中的一种或多种混合； The insulating modified layer at least contains MgF, MgO, BeO, TiO x , CrO 2 , ZrO 2 , HfO 2 , Ni 2 O 3 , SiO 2 , Al 2 O 3 , B 2 O 3 , In 2 O 3 , GeO 2. One or more of SnO 2 and SiN x are mixed;
所述导电改性层至少包含掺杂Al的ZnO或掺杂Sn的ln 2O 3。 The conductive modification layer at least contains Al-doped ZnO or Sn-doped ln 2 O 3 .
在该实施例中，所述改性层16为单独膜层的绝缘改性层或导电改性层。In this embodiment, the modified layer 16 is an insulating modified layer or a conductive modified layer of a separate film.
上述材料仅仅以举例的形式进行说明，还可以为其它绝缘性材料或导电性材料。The above-mentioned materials are only described in the form of examples, and other insulating materials or conductive materials may also be used.
进一步的，基于本发明上述实施例，所述绝缘改性层为多层结构；Further, based on the above embodiments of the present invention, the insulation modification layer is a multi-layer structure;
所述绝缘改性层包括：相邻所述衬底11一侧的基础绝缘层，以及设置在所述基础绝缘层背离所述衬底11一侧的其它膜层；The insulating modified layer includes: a basic insulating layer adjacent to the side of the substrate 11, and other film layers disposed on the side of the basic insulating layer away from the substrate 11;
其中，所述其它膜层为绝缘层或非绝缘层或堆叠膜层；Wherein, the other film layers are insulating layers or non-insulating layers or stacked film layers;
所述堆叠膜层为多层绝缘层的堆叠膜层，或多层非绝缘层的堆叠膜层，或非绝缘层和绝缘层的堆叠膜层。The stacked film layer is a stacked film layer of multiple insulating layers, or a stacked film layer of multiple non-insulating layers, or a stacked film layer of a non-insulating layer and an insulating layer.
在该实施例中，需要说明的是，当所述绝缘改性层为多层结构时，相邻所述衬底11一侧的第一层膜层必须为绝缘材料层。In this embodiment, it should be noted that when the insulation modification layer is a multi-layer structure, the first film layer on the side adjacent to the substrate 11 must be an insulating material layer.
其中，所述基础绝缘层和所述绝缘层的材料为MgF、MgO、BeO、TiO x、CrO 2、ZrO 2、HfO 2、Ni 2O 3、SiO 2、Al 2O 3、B 2O 3、In 2O 3、GeO 2、SnO 2和SiN x中的一种； Wherein, the materials of the basic insulating layer and the insulating layer are MgF, MgO, BeO, TiO x , CrO 2 , ZrO 2 , HfO 2 , Ni 2 O 3 , SiO 2 , Al 2 O 3 , B 2 O 3 One of , In 2 O 3 , GeO 2 , SnO 2 and SiN x ;
所述非绝缘层的材料为禁带宽度为0的材料，或禁带宽度小于4.0V的材料；在室温下足以把电子从价带激发到导带。The material of the non-insulating layer is a material with a forbidden band width of 0, or a material with a forbidden band width of less than 4.0V; it is sufficient to excite electrons from the valence band to the conduction band at room temperature.
所述非绝缘层为高反射层，所述高反射层的材料为Ag、Al、Ti、Pt、Au、Cu和Mo中的一种或多种。The non-insulating layer is a high reflection layer, and the material of the high reflection layer is one or more of Ag, Al, Ti, Pt, Au, Cu and Mo.
所述堆叠膜层为TiO x和SiO 2的DBR叠层结构。 The stacked film layer is a DBR stacked structure of TiO x and SiO 2 .
通过上述描述可知，当所述绝缘改性层为多层结构时，相邻所述衬底11一侧的第一层膜层必须为绝缘材料层，其它层可以采用不同材料的膜层，进而起到不同的作用。It can be seen from the above description that when the insulating modified layer has a multi-layer structure, the first film layer on the side adjacent to the substrate 11 must be an insulating material layer, and the other layers can use film layers of different materials, and then play a different role.
例如，采用高反射材料层，可以提高LED芯片的出光率。For example, by using a layer of highly reflective material, the light extraction rate of the LED chip can be improved.
采用高介电材料，如HfO 2，可以提高绝缘层的稳定性，避免电场的干扰。 Using high dielectric materials, such as HfO 2 , can improve the stability of the insulating layer and avoid the interference of the electric field.
采用化学性质更稳定的材料，如SiN x，可以提高LED芯片的耐化学腐蚀能力。 Using more chemically stable materials, such as SiN x , can improve the chemical resistance of LED chips.
采用力学性能优越的材料，如Al 2O 3，可以改善LED芯片的抗压应力的能力。 Using materials with superior mechanical properties, such as Al 2 O 3 , can improve the ability of the LED chip to withstand compressive stress.
采用耐高温的材料，如ZrO 2，可以提高LED芯片的耐高温的能力。 Using high temperature resistant materials, such as ZrO 2 , can improve the high temperature resistance capability of the LED chip.
进一步的，基于本发明上述实施例，参考图8，图8为本发明实施例提供的又一种具有改性层的LED芯片的结构示意图。Further, based on the above embodiment of the present invention, referring to FIG. 8 , FIG. 8 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.
所述改性层16和所述透明导电层15为一整面膜层结构。The modified layer 16 and the transparent conductive layer 15 are a whole film structure.
贯穿所述绝缘保护层17的第七凹槽结构，用于暴露出所述改性层16；a seventh groove structure penetrating the insulating protection layer 17 for exposing the modified layer 16;
如图8所示，当所述LED芯片包括金属接触层18时，则所述第七凹槽结构只需暴露出所述金属接触层18即可；As shown in FIG. 8 , when the LED chip includes the metal contact layer 18 , the seventh groove structure only needs to expose the metal contact layer 18 ;
贯穿所述绝缘保护层17的第八凹槽结构，用于暴露出所述N型半导体层12。The eighth groove structure penetrates through the insulating protection layer 17 for exposing the N-type semiconductor layer 12 .
通过所述第七凹槽结构与所述改性层16接触的P电极21；The P electrode 21 in contact with the modified layer 16 through the seventh groove structure;
如图8所示，当所述LED芯片包括金属接触层18时，则P电极21与金属接触层18接触连接；As shown in FIG. 8 , when the LED chip includes the metal contact layer 18 , the P electrode 21 is in contact with the metal contact layer 18 ;
通过所述第八凹槽结构与所述N型半导体层12接触的N电极22。The N electrode 22 in contact with the N-type semiconductor layer 12 through the eighth groove structure.
在该实施例中，当所述改性层16为一整面膜层时，所述改性层16必须为导电改性层；In this embodiment, when the modified layer 16 is a whole film layer, the modified layer 16 must be a conductive modified layer;
所述导电改性层至少包含掺杂Al的ZnO或掺杂Sn的ln 2O 3。 The conductive modification layer at least contains Al-doped ZnO or Sn-doped ln 2 O 3 .
该改性层16对芯片界面稳定性提升了10％。The modified layer 16 improves the chip interface stability by 10%.
进一步的，基于本发明上述实施例，所述改性层16的晶格参数介于所述透明导电层15的晶格参数和所述绝缘保护层17的晶格参数之间。Further, based on the above embodiments of the present invention, the lattice parameter of the modified layer 16 is between the lattice parameter of the transparent conductive layer 15 and the lattice parameter of the insulating protective layer 17 .
所述改性层16的热膨胀系数介于所述透明导电层15的热膨胀系数和所述绝缘保护层17的热膨胀系数之间。The thermal expansion coefficient of the modified layer 16 is between the thermal expansion coefficient of the transparent conductive layer 15 and the thermal expansion coefficient of the insulating protective layer 17 .
并且，选择透光性较好的材料作为改性层16，主要是氧化物材料，包括但不限定于SiO 2或TiO 2或ZrO 2或ZnO等。 In addition, a material with better light transmittance is selected as the modified layer 16, which is mainly an oxide material, including but not limited to SiO 2 or TiO 2 or ZrO 2 or ZnO.
需要说明的是，所述金属接触层18可以根据实际需求而定是否需要设置电流扩展条，在本发明实施例中并不作限定。It should be noted that, whether the metal contact layer 18 needs to be provided with a current expansion bar may be determined according to actual requirements, which is not limited in the embodiment of the present invention.
进一步的，基于本发明上述全部实施例，在本发明另一实施例中还提供了一种具有改性层的LED芯片的制作方法，参考图9，图9为本发明实施例提供的一种具有改性层的LED芯片的制作方法的流程示意图。Further, based on all the above embodiments of the present invention, another embodiment of the present invention also provides a method for manufacturing an LED chip with a modified layer. Referring to FIG. 9 , FIG. 9 is a method provided by an embodiment of the present invention. A schematic flowchart of a method for manufacturing an LED chip with a modified layer.
所述制作方法包括：The manufacturing method includes:
S101：如图10所示，提供一衬底11。S101: As shown in FIG. 10, a substrate 11 is provided.
在该步骤中，所述衬底11包括但不限定于GaAs衬底。In this step, the substrate 11 includes but is not limited to a GaAs substrate.
S102：如图11所示，在所述衬底11上生长外延层结构，所述外延层结构包括在第一方向上依次生长的N型半导体层12、有源层13和P型半导体层14，所述外延层结构还包括第一凹槽结构25，用于在预设区域暴露出所述N型半导体层12，所述第一方向为垂直于所述衬底11，且由所述衬底11指向所述外延层结构的方向。S102 : as shown in FIG. 11 , grow an epitaxial layer structure on the substrate 11 , and the epitaxial layer structure includes an N-type semiconductor layer 12 , an active layer 13 and a P-type semiconductor layer 14 sequentially grown in the first direction , the epitaxial layer structure further includes a first groove structure 25 for exposing the N-type semiconductor layer 12 in a predetermined area, the first direction is perpendicular to the substrate 11, and is formed by the lining Bottom 11 points in the direction of the epitaxial layer structure.
在该步骤中，所述N型半导体层12为N型氮化镓层、所述P型半导体层14为P型氮化镓层。In this step, the N-type semiconductor layer 12 is an N-type gallium nitride layer, and the P-type semiconductor layer 14 is a P-type gallium nitride layer.
如图10所示，当在所述衬底11上生长完成所述外延层结构后，对所述外延层结构的预设区域进行蚀刻，直至暴露出所述N型半导体层12。As shown in FIG. 10 , after the epitaxial layer structure is grown on the substrate 11 , a predetermined region of the epitaxial layer structure is etched until the N-type semiconductor layer 12 is exposed.
S103：如图12所示，在所述P型半导体层14背离所述衬底的一侧依次形成透明导电层15和改性层16。S103: As shown in FIG. 12, a transparent conductive layer 15 and a modified layer 16 are sequentially formed on the side of the P-type semiconductor layer 14 away from the substrate.
S104：如图1所示，在所述外延层结构背离所述衬底11的一侧形成绝缘保护层17，所述改性层16位于所述透明导电层15和所述绝缘保护层17之间。S104 : As shown in FIG. 1 , an insulating protective layer 17 is formed on the side of the epitaxial layer structure away from the substrate 11 , and the modified layer 16 is located between the transparent conductive layer 15 and the insulating protective layer 17 between.
在该实施例中，通过在透明导电层15和绝缘保护层17之间设置改性层16，该改性层16用于缓解透明导电层15和绝缘保护层17之间的晶格失配问题；一方面，直接生长的改性层16没有破坏透明导电层15表面的悬挂键状态，所以透明导电层15和改性层16之间的粘附性极强；另一方面，改性层16和绝缘保护层17的晶格失配较小，二者的粘附性良好；进而通过设置改性层16，可以大大提高透明导电层15与其接触的绝缘保护层17的粘附性，进而提高LED芯片的结构稳定性。In this embodiment, by disposing the modified layer 16 between the transparent conductive layer 15 and the insulating protective layer 17 , the modified layer 16 is used to alleviate the lattice mismatch problem between the transparent conductive layer 15 and the insulating protective layer 17 On the one hand, the directly grown modified layer 16 does not destroy the dangling bond state on the surface of the transparent conductive layer 15, so the adhesion between the transparent conductive layer 15 and the modified layer 16 is extremely strong; on the other hand, the modified layer 16 The lattice mismatch with the insulating protective layer 17 is small, and the adhesion between the two is good; and by setting the modified layer 16, the adhesion of the transparent conductive layer 15 and the insulating protective layer 17 in contact with it can be greatly improved, thereby improving the Structural stability of LED chips.
并且，该改性层16不仅提高了LED芯片结构的结构稳定性，而且同时还能作为透明导电层15的硬掩膜，进而改善透明导电层15材料蚀刻边缘不规则的缺陷问题，进而可以提高LED芯片静电击穿可靠性。In addition, the modified layer 16 not only improves the structural stability of the LED chip structure, but also serves as a hard mask for the transparent conductive layer 15, thereby improving the defect problem of irregular edges in the etching of the transparent conductive layer 15, thereby improving the LED chip electrostatic breakdown reliability.
进一步的，基于本发明上述实施例，所述制作方法中步骤S103具体为：Further, based on the above embodiments of the present invention, step S103 in the manufacturing method is specifically:
如图13所示，先在所述外延层结构背离所述衬底11的一侧生长所述透明导电层15。As shown in FIG. 13 , the transparent conductive layer 15 is first grown on the side of the epitaxial layer structure away from the substrate 11 .
如图14所示，之后，在所述透明导电层15背离所述衬底11的一侧生长 所述改性层16。As shown in Fig. 14, after that, the modified layer 16 is grown on the side of the transparent conductive layer 15 away from the substrate 11.
如图12所示，随之，采用同一道光刻工序，对所述改性层16和所述透明导电层15进行光刻，以暴露出第一凹槽结构25所在的区域。As shown in FIG. 12 , subsequently, the modified layer 16 and the transparent conductive layer 15 are subjected to photolithography by using the same photolithography process to expose the region where the first groove structure 25 is located.
如图15所示，最后，再对所述改性层16进行光刻，形成第二凹槽结构27，用于暴露出所述透明导电层15。As shown in FIG. 15 , finally, photolithography is performed on the modified layer 16 to form a second groove structure 27 for exposing the transparent conductive layer 15 .
进一步的，基于本发明上述实施例，所述制作方法还包括：Further, based on the foregoing embodiments of the present invention, the manufacturing method further includes:
如图2所示，通过在所述第二凹槽结构27在所述透明导电层15上形成金属接触层18。As shown in FIG. 2 , a metal contact layer 18 is formed on the transparent conductive layer 15 by the second groove structure 27 .
之后，如图16所示，在所述外延层结构背离所述衬底11的一侧形成绝缘保护层17。After that, as shown in FIG. 16 , an insulating protection layer 17 is formed on the side of the epitaxial layer structure away from the substrate 11 .
进一步的，基于本发明上述实施例，所述制作方法还包括：Further, based on the foregoing embodiments of the present invention, the manufacturing method further includes:
如图3所示，对所述绝缘保护层17进行蚀刻处理，形成第三凹槽结构19和第四凹槽结构20，用于暴露出所述金属接触层18和所述N型半导体层12。As shown in FIG. 3 , the insulating protection layer 17 is etched to form a third groove structure 19 and a fourth groove structure 20 for exposing the metal contact layer 18 and the N-type semiconductor layer 12 .
进一步的，基于本发明上述实施例，所述制作方法还包括：Further, based on the foregoing embodiments of the present invention, the manufacturing method further includes:
如图4所示，通过所述第三凹槽结构19在所述金属接触层18上形成接触的P电极21；通过所述第四凹槽结构20在所述N型半导体层12上形成接触的N电极22。As shown in FIG. 4 , a contact P electrode 21 is formed on the metal contact layer 18 through the third groove structure 19 ; a contact is formed on the N-type semiconductor layer 12 through the fourth groove structure 20 the N electrode 22.
进一步的，在本发明另一个实施例中，所述制作方法中步骤S103还可以具体为：Further, in another embodiment of the present invention, step S103 in the manufacturing method may also be specifically:
如图13所示，先在所述外延层结构背离所述衬底11的一侧生长所述透明导电层15。As shown in FIG. 13 , the transparent conductive layer 15 is first grown on the side of the epitaxial layer structure away from the substrate 11 .
如图14所示，之后，在所述透明导电层15背离所述衬底11的一侧生长所述改性层16。As shown in FIG. 14 , after that, the modified layer 16 is grown on the side of the transparent conductive layer 15 away from the substrate 11 .
如图12所示，随之，采用同一道光刻工序，对所述改性层16和所述透明导电层15进行光刻，以暴露出第一凹槽结构25所在的区域。As shown in FIG. 12 , subsequently, the modified layer 16 and the transparent conductive layer 15 are subjected to photolithography by using the same photolithography process to expose the region where the first groove structure 25 is located.
如图17所示，并且，采用同一道光刻工序，对所述改性层16和所述透明导电层15再次进行光刻，形成第六凹槽结构24，用于暴露出所述P型半导体层14。As shown in FIG. 17 , and using the same photolithography process, photolithography is performed on the modified layer 16 and the transparent conductive layer 15 again to form a sixth groove structure 24 for exposing the P-type semiconductor layer 14 .
如图5所示，最后，再次对所述改性层16进行光刻，以扩大第六凹槽结构24的开口区域，形成贯穿所述改性层16的第五凹槽结构23。As shown in FIG. 5 , finally, photolithography is performed on the modified layer 16 again to expand the opening area of the sixth groove structure 24 to form a fifth groove structure 23 penetrating the modified layer 16 .
在该实施例中，所述第五凹槽结构23的中心和所述第六凹槽结构24的中心重合。In this embodiment, the center of the fifth groove structure 23 coincides with the center of the sixth groove structure 24 .
进一步的，基于本发明上述实施例，所述制作方法还包括：Further, based on the foregoing embodiments of the present invention, the manufacturing method further includes:
如图6所示，通过所述第五凹槽结构23和所述第六凹槽结构24在所述P型半导体层14上形成接触的P电极21，所述P电极21还覆盖所述透明导电层15暴露出的区域。As shown in FIG. 6 , a contacting P electrode 21 is formed on the P-type semiconductor layer 14 through the fifth groove structure 23 and the sixth groove structure 24 , and the P electrode 21 also covers the transparent The area where the conductive layer 15 is exposed.
通过所述第一凹槽结构25在所述N型半导体层12上形成接触的N电极22。A contact N electrode 22 is formed on the N-type semiconductor layer 12 through the first groove structure 25 .
之后，如图7所示，在所述外延层结构背离所述衬底11的一侧形成绝缘保护层17。After that, as shown in FIG. 7 , an insulating protection layer 17 is formed on the side of the epitaxial layer structure away from the substrate 11 .
进一步的，基于本发明上述实施例，所述制作方法还包括：Further, based on the foregoing embodiments of the present invention, the manufacturing method further includes:
如图7所示，对所述绝缘保护层17进行蚀刻处理形成开口区域，用于暴露出所述P电极21和所述N电极22。As shown in FIG. 7 , the insulating protection layer 17 is etched to form an opening area for exposing the P electrode 21 and the N electrode 22 .
进一步的，在本发明另一个实施例中，所述制作方法中步骤S103还可以具体为：Further, in another embodiment of the present invention, step S103 in the manufacturing method may also be specifically:
如图13所示，先在所述外延层结构背离所述衬底11的一侧生长所述透明导电层15。As shown in FIG. 13 , the transparent conductive layer 15 is first grown on the side of the epitaxial layer structure away from the substrate 11 .
如图14所示，之后，在所述透明导电层15背离所述衬底11的一侧生长所述改性层16。As shown in FIG. 14 , after that, the modified layer 16 is grown on the side of the transparent conductive layer 15 away from the substrate 11 .
如图12所示，随之，采用同一道光刻工序，对所述改性层16和所述透明导电层15进行光刻，以暴露出第一凹槽结构25所在的区域。As shown in FIG. 12 , subsequently, the modified layer 16 and the transparent conductive layer 15 are subjected to photolithography by using the same photolithography process to expose the region where the first groove structure 25 is located.
如图8所示，当需要设置金属接触层时，则在所述改性层16上设置金属接触层18。As shown in FIG. 8 , when a metal contact layer needs to be provided, a metal contact layer 18 is provided on the modified layer 16 .
如图8所示，对所述绝缘保护层17进行蚀刻处理，形成第七凹槽结构和第八凹槽结构，用于暴露出所述金属接触层18和所述N型半导体层12。As shown in FIG. 8 , the insulating protection layer 17 is etched to form a seventh groove structure and an eighth groove structure for exposing the metal contact layer 18 and the N-type semiconductor layer 12 .
如图8所示，通过所述第七凹槽结构在所述金属接触层18上形成接触的P电极21；通过所述第八凹槽结构在所述N型半导体层12上形成接触的N电极22。As shown in FIG. 8 , a contacting P electrode 21 is formed on the metal contact layer 18 through the seventh groove structure; an N contacting N-type semiconductor layer 12 is formed through the eighth groove structure electrode 22.
需要说明的是，当不需要设置金属接触层18时，则P电极21与改性层16接触。It should be noted that when the metal contact layer 18 does not need to be provided, the P electrode 21 is in contact with the modified layer 16 .
以上对本发明所提供的一种具有改性层的LED芯片及其制作方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。A LED chip with a modified layer and a manufacturing method thereof provided by the present invention have been described above in detail. In this paper, specific examples are used to illustrate the principles and implementations of the present invention. The descriptions of the above examples are only used for Help to understand the method of the present invention and its core idea; at the same time, for those skilled in the art, according to the idea of the present invention, there will be changes in the specific implementation and application scope. In summary, the content of this specification It should not be construed as a limitation of the present invention.
需要说明的是，本说明书中的各个实施例均采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似的部分互相参见即可。对于实施例公开的装置而言，由于其与实施例公开的方法相对应，所以描述的比较简单，相关之处参见方法部分说明即可。It should be noted that the various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. For the same and similar parts of the various embodiments, refer to each other Can. As for the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant part can be referred to the description of the method.
还需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备所固有的要素，或者是还包括为这些过程、方法、物品或者设备所固有的要素。在没有更多限制的 情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。It should also be noted that in this document, relational terms such as first and second are used only to distinguish one entity or operation from another, and do not necessarily require or imply those entities or operations There is no such actual relationship or order between them. Furthermore, the terms "comprising", "comprising" or any other variation thereof are intended to encompass a non-exclusive inclusion such that a process, method, article, or device of a list of elements is included, inherent to, or is also included for, those processes. , method, article or device inherent elements. Without further limitation, an element qualified by the phrase "comprising a..." does not preclude the presence of additional identical elements in a process, method, article or apparatus that includes the element.
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above description of the disclosed embodiments enables any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (20)

  1. 一种具有改性层的LED芯片，其特征在于，所述LED芯片包括：An LED chip with a modified layer, characterized in that the LED chip comprises:
    衬底；substrate;
    设置在所述衬底上的外延层结构；an epitaxial layer structure disposed on the substrate;
    依次设置在所述外延层结构背离所述衬底一侧的透明导电层、改性层和绝缘保护层，所述改性层位于所述透明导电层和所述绝缘保护层之间。A transparent conductive layer, a modified layer and an insulating protective layer are sequentially arranged on the side of the epitaxial layer structure away from the substrate, and the modified layer is located between the transparent conductive layer and the insulating protective layer.
  2. 根据权利要求1所述的LED芯片，其特征在于，所述外延层结构包括：The LED chip according to claim 1, wherein the epitaxial layer structure comprises:
    在第一方向上依次设置的N型半导体层、有源层和P型半导体层，所述外延层结构还包括第一凹槽结构，用于在预设区域暴露出所述N型半导体层，所述第一方向为垂直于所述衬底，且由所述衬底指向所述外延层结构的方向；The N-type semiconductor layer, the active layer and the P-type semiconductor layer are arranged in sequence in the first direction, the epitaxial layer structure further includes a first groove structure for exposing the N-type semiconductor layer in a predetermined area, the first direction is perpendicular to the substrate and is directed from the substrate to the epitaxial layer structure;
    所述透明导电层和所述改性层依次设置在所述P型半导体层背离所述衬底的一侧。The transparent conductive layer and the modified layer are sequentially disposed on the side of the P-type semiconductor layer away from the substrate.
  3. 根据权利要求2所述的LED芯片，其特征在于，所述LED芯片还包括：The LED chip according to claim 2, wherein the LED chip further comprises:
    贯穿所述改性层的第二凹槽结构，用于暴露出所述透明导电层。A second groove structure penetrating the modified layer is used to expose the transparent conductive layer.
  4. 根据权利要求3所述的LED芯片，其特征在于，所述LED芯片还包括：The LED chip according to claim 3, wherein the LED chip further comprises:
    贯穿所述绝缘保护层的第三凹槽结构，用于暴露出所述透明导电层；a third groove structure penetrating the insulating protective layer for exposing the transparent conductive layer;
    贯穿所述绝缘保护层的第四凹槽结构，用于暴露出所述N型半导体层。A fourth groove structure penetrating the insulating protection layer is used to expose the N-type semiconductor layer.
  5. 根据权利要求4所述的LED芯片，其特征在于，所述LED芯片还包括：The LED chip according to claim 4, wherein the LED chip further comprises:
    通过所述第三凹槽结构与所述透明导电层接触的P电极；A P electrode in contact with the transparent conductive layer through the third groove structure;
    通过所述第四凹槽结构与所述N型半导体层接触的N电极。An N electrode in contact with the N-type semiconductor layer through the fourth groove structure.
  6. 根据权利要求5所述的LED芯片，其特征在于，所述LED芯片还包括：The LED chip according to claim 5, wherein the LED chip further comprises:
    设置在所述透明导电层上的金属接触层。A metal contact layer disposed on the transparent conductive layer.
  7. 根据权利要求2所述的LED芯片，其特征在于，所述LED芯片还包括：The LED chip according to claim 2, wherein the LED chip further comprises:
    贯穿所述改性层的第五凹槽结构，以及贯穿所述透明导电层的第六凹槽结构。A fifth groove structure penetrating the modified layer, and a sixth groove structure penetrating the transparent conductive layer.
  8. 根据权利要求7所述的LED芯片，其特征在于，所述LED芯片还包括：The LED chip according to claim 7, wherein the LED chip further comprises:
    通过所述第五凹槽结构和所述第六凹槽结构与所述P型半导体层接触的P电极，所述P电极还覆盖所述透明导电层暴露出的区域；The P electrode is in contact with the P-type semiconductor layer through the fifth groove structure and the sixth groove structure, and the P electrode also covers the exposed area of the transparent conductive layer;
    通过所述第一凹槽结构与所述N型半导体层接触的N电极。An N electrode in contact with the N-type semiconductor layer through the first groove structure.
  9. 根据权利要求8所述的LED芯片，其特征在于，所述LED芯片还包括：The LED chip according to claim 8, wherein the LED chip further comprises:
    设置在所述P型半导体层和所述P电极之间的金属接触层。A metal contact layer disposed between the P-type semiconductor layer and the P-electrode.
  10. 根据权利要求1-9任一项所述LED芯片，其特征在于，所述改性层为绝缘改性层或导电改性层；The LED chip according to any one of claims 1-9, wherein the modified layer is an insulating modified layer or a conductive modified layer;
    所述绝缘改性层至少包含MgF、MgO、BeO、TiO x、CrO 2、ZrO 2、HfO 2、Ni 2O 3、SiO 2、Al 2O 3、B 2O 3、In 2O 3、GeO 2、SnO 2和SiN x中的一种或多种混合； The insulating modified layer at least contains MgF, MgO, BeO, TiO x , CrO 2 , ZrO 2 , HfO 2 , Ni 2 O 3 , SiO 2 , Al 2 O 3 , B 2 O 3 , In 2 O 3 , GeO 2. One or more of SnO 2 and SiN x are mixed;
    所述导电改性层至少包含掺杂Al的ZnO或掺杂Sn的ln 2O 3。 The conductive modification layer at least contains Al-doped ZnO or Sn-doped ln 2 O 3 .
  11. 根据权利要求10所述的LED芯片，其特征在于，所述绝缘改性层为多层结构；The LED chip according to claim 10, wherein the insulating modified layer is a multi-layer structure;
    所述绝缘改性层包括：相邻所述衬底一侧的基础绝缘层，以及设置在所述基础绝缘层背离所述衬底一侧的其它膜层；The insulating modified layer includes: a basic insulating layer on one side adjacent to the substrate, and other film layers disposed on the side of the basic insulating layer away from the substrate;
    其中，所述其它膜层为绝缘层或非绝缘层或堆叠膜层；Wherein, the other film layers are insulating layers or non-insulating layers or stacked film layers;
    所述堆叠膜层为多层绝缘层的堆叠膜层，或多层非绝缘层的堆叠膜层，或非绝缘层和绝缘层的堆叠膜层。The stacked film layer is a stacked film layer of multiple insulating layers, or a stacked film layer of multiple non-insulating layers, or a stacked film layer of a non-insulating layer and an insulating layer.
  12. 根据权利要求11所述的LED芯片，其特征在于，所述基础绝缘层和所述绝缘层的材料为MgF、MgO、BeO、TiO x、CrO 2、ZrO 2、HfO 2、Ni 2O 3、SiO 2、Al 2O 3、B 2O 3、In 2O 3、GeO 2、SnO 2和SiN x中的一种； The LED chip according to claim 11, wherein the basic insulating layer and the insulating layer are made of MgF, MgO, BeO, TiO x , CrO 2 , ZrO 2 , HfO 2 , Ni 2 O 3 , One of SiO 2 , Al 2 O 3 , B 2 O 3 , In 2 O 3 , GeO 2 , SnO 2 and SiN x ;
    所述非绝缘层的材料为禁带宽度为0的材料，或禁带宽度小于4.0V的材料；The material of the non-insulating layer is a material with a forbidden band width of 0, or a material with a forbidden band width of less than 4.0V;
    所述非绝缘层为高反射层，所述高反射层的材料为Ag、Al、Ti、Pt、Au、Cu和Mo中的一种或多种。The non-insulating layer is a high reflection layer, and the material of the high reflection layer is one or more of Ag, Al, Ti, Pt, Au, Cu and Mo.
  13. 根据权利要求2所述的LED芯片，其特征在于，所述改性层和所述透明导电层为一整面膜层结构。The LED chip according to claim 2, characterized in that, the modified layer and the transparent conductive layer are a whole film structure.
  14. 根据权利要求13所述的LED芯片，其特征在于，所述LED芯片还包括：The LED chip according to claim 13, wherein the LED chip further comprises:
    贯穿所述绝缘保护层的第七凹槽结构，用于暴露出所述改性层；a seventh groove structure penetrating the insulating protective layer for exposing the modified layer;
    贯穿所述绝缘保护层的第八凹槽结构，用于暴露出所述N型半导体层。The eighth groove structure penetrates through the insulating protection layer for exposing the N-type semiconductor layer.
  15. 根据权利要求14所述的LED芯片，其特征在于，所述LED芯片还包括：The LED chip according to claim 14, wherein the LED chip further comprises:
    设置在所述改性层上的金属接触层。A metal contact layer disposed on the modified layer.
  16. 根据权利要求13-15任一项所述LED芯片，其特征在于，所述改性层为导电改性层；The LED chip according to any one of claims 13-15, wherein the modified layer is a conductive modified layer;
    所述导电改性层至少包含掺杂Al的ZnO或掺杂Sn的ln 2O 3。 The conductive modification layer at least contains Al-doped ZnO or Sn-doped ln 2 O 3 .
  17. 根据权利要求1所述的LED芯片，其特征在于，所述改性层的晶格参数介于所述透明导电层的晶格参数和所述绝缘保护层的晶格参数之间。The LED chip according to claim 1, wherein the lattice parameter of the modified layer is between the lattice parameter of the transparent conductive layer and the lattice parameter of the insulating protective layer.
  18. 根据权利要求1所述的LED芯片，其特征在于，所述改性层的热膨胀系数介于所述透明导电层的热膨胀系数和所述绝缘保护层的热膨胀系数之间。The LED chip according to claim 1, wherein the thermal expansion coefficient of the modified layer is between the thermal expansion coefficient of the transparent conductive layer and the thermal expansion coefficient of the insulating protective layer.
  19. 一种具有改性层的LED芯片的制作方法，其特征在于，所述制作方法包括：A method for manufacturing an LED chip with a modified layer, wherein the manufacturing method comprises:
    提供一衬底；providing a substrate;
    在所述衬底上生长外延层结构，所述外延层结构包括在第一方向上依次生长的N型半导体层、有源层和P型半导体层，所述外延层结构还包括第一凹槽结构，用于在预设区域暴露出所述N型半导体层，所述第一方向为垂直于所述衬底，且由所述衬底指向所述外延层结构的方向；An epitaxial layer structure is grown on the substrate, the epitaxial layer structure includes an N-type semiconductor layer, an active layer and a P-type semiconductor layer sequentially grown in a first direction, and the epitaxial layer structure further includes a first groove a structure for exposing the N-type semiconductor layer in a predetermined area, the first direction is perpendicular to the substrate, and is directed from the substrate to the direction of the epitaxial layer structure;
    在所述P型半导体层背离所述衬底的一侧依次形成透明导电层、改性层和绝缘保护层，所述改性层位于所述透明导电层和所述绝缘保护层之间。A transparent conductive layer, a modified layer and an insulating protective layer are sequentially formed on the side of the P-type semiconductor layer away from the substrate, and the modified layer is located between the transparent conductive layer and the insulating protective layer.
  20. 根据权利要求19所述的制作方法，其特征在于，所述改性层和所述透明导电层采用同一道光刻工序。The manufacturing method according to claim 19, wherein the modified layer and the transparent conductive layer use the same photolithography process.
PCT/CN2020/114973 2020-09-14 2020-09-14 Led chip having modified layer and production method therefor WO2022052085A1 (en)

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JP2016012611A (en) * 2014-06-27 2016-01-21 サンケン電気株式会社 Semiconductor light emitting device
CN105938862A (en) * 2016-05-24 2016-09-14 华灿光电(苏州）有限公司 GaN-based light-emitting diode chip and preparation method thereof
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JP2016012611A (en) * 2014-06-27 2016-01-21 サンケン電気株式会社 Semiconductor light emitting device
CN105938862A (en) * 2016-05-24 2016-09-14 华灿光电(苏州）有限公司 GaN-based light-emitting diode chip and preparation method thereof
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