CN212725351U - LED chip with modified layer - Google Patents

Abstract

The utility model provides a LED chip with modified layer has not only improved the adhesion of chip structure, can regard as the hard mask of transparent conducting layer simultaneously moreover, improves the irregular defect in transparent conducting layer material etching edge, so can improve chip electrostatic breakdown reliability. The material of the modified layer is selected from the transparent conductive layer and the transparent conductive layerThe insulating protective layer is made of a material having high light transmittance, mainly an oxide material, e.g., SiO₂、TiO₂、ZrO₂、ZnO。

Description

LED chip with modified layer

Technical Field

The utility model relates to a photoelectron technical field, more specifically say, relate to a LED chip with modified layer.

Background

With the development of LED technology, the application of LEDs is becoming more and more common, and the LEDs become essential light-emitting elements in the fields of illumination, display and the like. Specifically, the LED chip is a core component of the LED, and is used for converting electric energy into light energy by energy release through recombination of electrons and holes under the control of voltage.

However, the bonding stability between the transparent conductive layer and the insulating layer in contact with the transparent conductive layer in the existing LED chip is poor, and in a long-time use process, the interface between the transparent conductive layer and the insulating layer becomes a weak area of the LED chip due to poor bonding stability, and thus the structural stability of the LED chip is reduced.

SUMMERY OF THE UTILITY MODEL

In view of this, in order to solve the above problems, the present invention provides an LED chip with a modified layer and a method for manufacturing the same, wherein the technical scheme is as follows:

an LED chip having a modification layer, the LED chip comprising:

a substrate;

an epitaxial layer structure disposed on the substrate;

the epitaxial layer structure comprises a transparent conducting layer, a modification layer and an insulating protection layer, wherein the transparent conducting layer, the modification layer and the insulating protection layer are sequentially arranged on one side, deviating from the substrate, of the epitaxial layer structure, and the modification layer is located between the transparent conducting layer and the insulating protection layer.

Optionally, in the LED chip, the epitaxial layer structure includes:

the epitaxial layer structure comprises an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially arranged in a first direction, and further comprises a first groove structure which is used for exposing the N-type semiconductor layer in a preset area, wherein the first direction is perpendicular to the substrate and points to the epitaxial layer structure from the substrate;

the transparent conducting layer and the modified layer are sequentially arranged on one side, away from the substrate, of the P-type semiconductor layer.

Optionally, in the above LED chip, the LED chip further includes:

and the second groove structure penetrates through the modified layer and is used for exposing the transparent conducting layer.

Optionally, in the above LED chip, the LED chip further includes:

the third groove structure penetrates through the insulating protection layer and is used for exposing the transparent conducting layer;

and the fourth groove structure penetrates through the insulating protection layer and is used for exposing the N-type semiconductor layer.

Optionally, in the above LED chip, the LED chip further includes:

a P electrode in contact with the transparent conductive layer through the third groove structure;

and the N electrode is in contact with the N-type semiconductor layer through the fourth groove structure.

Optionally, in the above LED chip, the LED chip further includes:

a metal contact layer disposed on the transparent conductive layer.

Optionally, in the above LED chip, the LED chip further includes:

a fifth groove structure penetrating through the modification layer, and a sixth groove structure penetrating through the transparent conductive layer.

Optionally, in the above LED chip, the LED chip further includes:

the P electrode is in contact with the P-type semiconductor layer through the fifth groove structure and the sixth groove structure and also covers an exposed area of the transparent conductive layer;

and the N electrode is in contact with the N-type semiconductor layer through the first groove structure.

Optionally, in the above LED chip, the LED chip further includes:

a metal contact layer disposed between the P-type semiconductor layer and the P-electrode.

Optionally, in the LED chip, the modification layer is an insulating modification layer or a conductive modification layer;

the insulation modification layer at least comprises MgF, MgO, BeO and TiO_x、CrO₂、ZrO₂、HfO₂、Ni₂O₃、SiO₂、Al₂O₃、B₂O₃、In₂O₃、GeO₂、SnO₂And SiN_xOne or more of the following;

the conductive modified layer at least comprises Al-doped ZnO or Sn-doped ln₂O₃。

Optionally, in the LED chip, the insulating modification layer is a multilayer structure;

the insulation modification layer includes: the base insulating layer is adjacent to one side of the substrate, and the other film layers are arranged on the side, away from the substrate, of the base insulating layer;

wherein the other film layers are insulating layers or non-insulating layers or stacked film layers;

the stacked film layer is a stacked film layer of a plurality of insulating layers, or a stacked film layer of a plurality of non-insulating layers, or a stacked film layer of a non-insulating layer and an insulating layer.

Optionally, in the LED chip, the base insulating layer and the insulating layer are made of MgF, MgO, BeO, or TiO_x、CrO₂、ZrO₂、HfO₂、Ni₂O₃、SiO₂、Al₂O₃、B₂O₃、In₂O₃、GeO₂、SnO₂And SiN_xOne of (1);

the non-insulating layer is made of a material with the forbidden band width of 0 or a material with the forbidden band width of less than 4.0V;

the non-insulating layer is a high-reflection layer, and the material of the high-reflection layer is one or more of Ag, Al, Ti, Pt, Au, Cu and Mo.

Optionally, in the LED chip, the modification layer and the transparent conductive layer are a whole surface film layer structure.

Optionally, in the above LED chip, the LED chip further includes:

a seventh groove structure penetrating through the insulating protection layer and used for exposing the modification layer;

and the eighth groove structure penetrates through the insulating protective layer and is used for exposing the N-type semiconductor layer.

Optionally, in the above LED chip, the LED chip further includes:

a metal contact layer disposed on the modified layer.

Optionally, in the LED chip, the modification layer is a conductive modification layer;

the conductive modified layer at least comprises Al-doped ZnO or Sn-doped ln₂O₃。

Optionally, in the LED chip, a lattice parameter of the modification layer is between a lattice parameter of the transparent conductive layer and a lattice parameter of the insulating protection layer.

Optionally, in the LED chip, a thermal expansion coefficient of the modification layer is between a thermal expansion coefficient of the transparent conductive layer and a thermal expansion coefficient of the insulating protection layer.

A method of fabricating an LED chip having a modified layer, the method comprising:

providing a substrate;

growing an epitaxial layer structure on the substrate, wherein the epitaxial layer structure comprises an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially grown in a first direction, the epitaxial layer structure further comprises a first groove structure which is used for exposing the N-type semiconductor layer in a preset area, and the first direction is perpendicular to the substrate and is towards the epitaxial layer structure from the substrate;

and sequentially forming a transparent conducting layer, a modification layer and an insulating protection layer on one side of the P-type semiconductor layer, which is far away from the substrate, wherein the modification layer is positioned between the transparent conducting layer and the insulating protection layer.

Optionally, in the manufacturing method, the modifying layer and the transparent conductive layer adopt the same photolithography process.

Compared with the prior art, the utility model discloses the beneficial effect who realizes does:

the utility model provides a pair of LED chip with modified layer has not only improved the adhesion of chip structure, can regard as the hard mask of transparent conducting layer simultaneously moreover, improves the irregular defect in transparent conducting layer material etching edge, so can improve chip electrostatic breakdown reliability.

The material of the modified layer is selected from materials with crystal lattice size between that of the transparent conductive layer and that of the insulating protective layer, and has good light transmission property, and is mainly oxide material, such as SiO₂、TiO₂、ZrO₂、ZnO。

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.

Fig. 1 is a schematic structural diagram of an LED chip having a modified layer according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of another LED chip with a modified layer according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of another LED chip with a modified layer according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of another LED chip with a modified layer according to an embodiment of the present invention;

fig. 5 is a schematic structural diagram of another LED chip with a modified layer according to an embodiment of the present invention;

fig. 6 is a schematic structural diagram of another LED chip with a modified layer according to an embodiment of the present invention;

fig. 7 is a schematic structural diagram of another LED chip with a modified layer according to an embodiment of the present invention;

fig. 8 is a schematic structural diagram of another LED chip with a modified layer according to an embodiment of the present invention;

fig. 9 is a schematic flowchart of a method for manufacturing an LED chip having a modified layer according to an embodiment of the present invention;

fig. 10-17 are schematic structural diagrams corresponding to the manufacturing method shown in fig. 9.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description.

Referring to fig. 1, fig. 1 is a schematic structural diagram of an LED chip having a modified layer according to an embodiment of the present invention.

The LED chip includes:

a substrate 11.

An epitaxial layer structure disposed on the substrate 11;

the epitaxial layer structure comprises a transparent conducting layer 15, a modification layer 16 and an insulating protection layer 17 which are sequentially arranged on one side of the epitaxial layer structure, which is far away from the substrate 11, wherein the modification layer 16 is positioned between the transparent conducting layer 15 and the insulating protection layer 17.

As shown in fig. 1, the epitaxial layer structure includes an N-type semiconductor layer 12, an active layer 13, and a P-type semiconductor layer 14 sequentially arranged in a first direction, and the epitaxial layer structure further includes a first groove structure for exposing the N-type semiconductor layer 12 in a preset region, where the first direction is perpendicular to the substrate 11 and is directed from the substrate 11 to the epitaxial layer structure.

The transparent conducting layer 15 and the modified layer 16 are sequentially arranged on one side of the P-type semiconductor layer 12, which is far away from the substrate 11.

In this embodiment, by providing the modification layer 16 between the transparent conductive layer 15 and the insulating protection layer 17, the modification layer 16 serves to alleviate the lattice mismatch problem between the transparent conductive layer 15 and the insulating protection layer 17; on one hand, the directly grown modified layer 16 does not destroy the state of the dangling bond on the surface of the transparent conductive layer 15, so that the adhesion between the transparent conductive layer 15 and the modified layer 16 is extremely strong; on the other hand, the lattice mismatch between the modified layer 16 and the insulating protective layer 17 is small, and the adhesion between the two is good; furthermore, by providing the modified layer 16, the adhesion between the transparent conductive layer 15 and the insulating protective layer 17 in contact therewith can be greatly improved, and the structural stability of the LED chip can be further improved.

Moreover, the modified layer 16 not only improves the structural stability of the LED chip structure, but also can be used as a hard mask of the transparent conductive layer 15, so as to improve the defect of irregular etching edge of the material of the transparent conductive layer 15, thereby improving the reliability of the electrostatic breakdown of the LED chip.

It should be noted that the LED chip structure shown in fig. 1 only illustrates a part of the LED chip structure.

Further, based on the above embodiments of the present invention, referring to fig. 2, fig. 2 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.

The LED chip further includes:

and a second groove structure penetrating through the modified layer 16 for exposing the transparent conductive layer 15.

A metal contact layer 18 disposed on the transparent conductive layer 15 through the second groove structure.

In this embodiment, a metal contact layer may also be disposed on the N-type semiconductor layer 12 through the first groove structure, so as to improve the performance of the LED chip.

Further, based on the above embodiments of the present invention, referring to fig. 3, fig. 3 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.

The LED chip further includes:

and a third groove structure 19 penetrating the insulating protection layer 17 for exposing the transparent conductive layer 15.

As shown in fig. 3, when the LED chip is provided with the metal contact layer 18, the third groove structure 19 is used to expose the metal contact layer 18.

The LED chip further includes:

and a fourth groove structure 20 penetrating through the insulating protection layer 17 for exposing the N-type semiconductor layer 12.

In this embodiment, the insulating protection layer 17 is etched to form the third groove structure 19 and the fourth groove structure 20, which are respectively used for exposing the transparent conductive layer 15 and the N-type semiconductor layer 12, so as to be a basis for the subsequent fabrication of an electrode structure.

Further, based on the above embodiments of the present invention, referring to fig. 4, fig. 4 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.

The LED chip further includes:

a P electrode 21 in contact with the transparent conductive layer 15 through the third groove structure 19;

as shown in fig. 4, when the LED chip is provided with the metal contact layer 18, the P-electrode 21 is in contact connection with the metal contact layer 18 through the third groove structure 19;

and an N-electrode 22 contacting the N-type semiconductor layer 12 through the fourth groove structure 20.

In this embodiment, the materials of the P electrode 21 and the N electrode 22 may be the same or different, and are not limited herein.

Further, in another embodiment of the present invention, referring to fig. 5, fig. 5 is a schematic structural diagram of another LED chip with a modified layer according to an embodiment of the present invention.

The LED chip further includes:

a fifth groove structure 23 penetrating the modification layer 16, and a sixth groove structure 24 penetrating the transparent conductive layer 15;

it should be noted that, when the modified layer 16 is an insulating modified layer, an opening area of the fifth groove structure 23 is larger than an opening area of the sixth groove 24, so as to expose a portion of the transparent conductive layer 15.

In this embodiment, the center of the fifth groove structure 23 and the center of the sixth groove structure 24 coincide.

When the modified layer 16 is a conductive modified layer, the opening region of the fifth groove structure 23 and the opening region of the sixth groove 24 are not limited.

Further, based on the above embodiments of the present invention, referring to fig. 6, fig. 6 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.

The LED chip further includes:

the P electrode 21 is in contact with the P-type semiconductor layer 14 through the fifth groove structure 23 and the sixth groove structure 24, and the P electrode 21 also covers an exposed area of the transparent conductive layer 15;

and an N-electrode 22 contacting the N-type semiconductor layer 12 through the first groove structure.

In this embodiment, the materials of the P electrode 21 and the N electrode 22 may be the same or different, and are not limited herein.

Further, based on the above embodiments of the present invention, referring to fig. 7, fig. 7 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.

An opening region is disposed on the insulating protection layer 17 for exposing the P electrode 21 and the N electrode 22.

In this embodiment, the thickness of the insulating protective layer of the LED chip shown in fig. 7 is thinner as compared with the LED chip shown in fig. 4.

Further, according to the above embodiments of the present invention, the modified layer 16 is an insulating modified layer or a conductive modified layer;

the insulation modification layer at least comprises MgF, MgO, BeO and TiO_x、CrO₂、ZrO₂、HfO₂、Ni₂O₃、SiO₂、Al₂O₃、B₂O₃、In₂O₃、GeO₂、SnO₂And SiN_xOne or more of the following;

the conductive modified layer at least comprises Al-doped ZnO or Sn-doped ln₂O₃。

In this embodiment, the modified layer 16 is an insulating modified layer or a conductive modified layer of a separate film layer.

The above materials are merely described by way of example, and other insulating materials or conductive materials may be used.

Further, according to the above embodiments of the present invention, the insulation modification layer has a multi-layer structure;

the insulation modification layer includes: a base insulating layer adjacent to one side of the substrate 11, and other film layers arranged on one side of the base insulating layer, which is far away from the substrate 11;

wherein the other film layers are insulating layers or non-insulating layers or stacked film layers;

the stacked film layer is a stacked film layer of a plurality of insulating layers, or a stacked film layer of a plurality of non-insulating layers, or a stacked film layer of a non-insulating layer and an insulating layer.

In this embodiment, it should be noted that when the insulation modification layer is a multilayer structure, the first film layer adjacent to one side of the substrate 11 must be an insulating material layer.

Wherein the base insulating layer and the insulating layer are made of MgF, MgO, BeO and TiO_x、CrO₂、ZrO₂、HfO₂、Ni₂O₃、SiO₂、Al₂O₃、B₂O₃、In₂O₃、GeO₂、SnO₂And SiN_xOne of (1);

the non-insulating layer is made of a material with the forbidden band width of 0 or a material with the forbidden band width of less than 4.0V; sufficient to excite an electron from the valence band to the conduction band at room temperature.

The non-insulating layer is a high-reflection layer, and the material of the high-reflection layer is one or more of Ag, Al, Ti, Pt, Au, Cu and Mo.

The stacked film layer is TiO_xAnd SiO₂The DBR stack of (1).

As can be seen from the above description, when the insulation modification layer has a multi-layer structure, the first layer of film adjacent to one side of the substrate 11 must be an insulation material layer, and other layers may be films of different materials, so as to perform different functions.

For example, the light extraction rate of the LED chip can be improved by using a highly reflective material layer.

Using high-dielectric materials, e.g. HfO₂The stability of the insulating layer can be improved, and the interference of an electric field can be avoided.

Using chemically more stable materials, e.g. SiN_xThe chemical corrosion resistance of the LED chip can be improved.

Using materials with excellent mechanical properties, e.g. Al₂O₃The ability of the LED chip to resist compressive stress can be improved.

Using materials resistant to high temperatures, e.g. ZrO₂The high temperature resistance of the LED chip can be improved.

Further, based on the above embodiments of the present invention, referring to fig. 8, fig. 8 is a schematic structural diagram of another LED chip with a modified layer provided by an embodiment of the present invention.

The modified layer 16 and the transparent conductive layer 15 are of a whole-surface film structure.

A seventh groove structure penetrating the insulating protection layer 17 for exposing the modified layer 16;

as shown in fig. 8, when the LED chip includes the metal contact layer 18, the seventh groove structure only needs to expose the metal contact layer 18;

and the eighth groove structure penetrates through the insulating protective layer 17 and is used for exposing the N-type semiconductor layer 12.

A P electrode 21 in contact with the modified layer 16 through the seventh groove structure;

as shown in fig. 8, when the LED chip includes the metal contact layer 18, the P-electrode 21 is in contact connection with the metal contact layer 18;

and an N-electrode 22 contacting the N-type semiconductor layer 12 through the eighth groove structure.

In this embodiment, when the modified layer 16 is a full-surface film layer, the modified layer 16 must be a conductive modified layer;

the conductive modified layer at least comprises Al-doped ZnO or Sn-doped ln₂O₃。

The modified layer 16 improves the stability of the chip interface by 10%.

Further, according to the above embodiment of the present invention, the lattice parameter of the modified layer 16 is between the lattice parameter of the transparent conductive layer 15 and the lattice parameter of the insulating protection layer 17.

The thermal expansion coefficient of the modified layer 16 is between that of the transparent conductive layer 15 and that of the insulating protective layer 17.

Furthermore, the modified layer 16 is made of a material having a high light transmittance, mainly an oxide material, including but not limited to SiO₂Or TiO₂Or ZrO₂Or ZnO, etc.

It should be noted that, the metal contact layer 18 may be provided with a current spreading bar according to actual requirements, and is not limited in the embodiment of the present invention.

Further, based on all the above embodiments of the present invention, in another embodiment of the present invention, a method for manufacturing a LED chip with a modified layer is further provided, referring to fig. 9, fig. 9 is a schematic flow diagram of a method for manufacturing a LED chip with a modified layer provided by an embodiment of the present invention.

The manufacturing method comprises the following steps:

s101: as shown in fig. 10, a substrate 11 is provided.

In this step, the substrate 11 includes, but is not limited to, a GaAs substrate.

S102: as shown in fig. 11, an epitaxial layer structure is grown on the substrate 11, the epitaxial layer structure includes an N-type semiconductor layer 12, an active layer 13, and a P-type semiconductor layer 14 that are sequentially grown in a first direction, the epitaxial layer structure further includes a first groove structure 25 for exposing the N-type semiconductor layer 12 in a preset region, and the first direction is a direction perpendicular to the substrate 11 and pointing to the epitaxial layer structure from the substrate 11.

In this step, the N-type semiconductor layer 12 is an N-type gallium nitride layer, and the P-type semiconductor layer 14 is a P-type gallium nitride layer.

As shown in fig. 10, after the epitaxial layer structure is grown on the substrate 11, a predetermined region of the epitaxial layer structure is etched until the N-type semiconductor layer 12 is exposed.

S103: as shown in fig. 12, a transparent conductive layer 15 and a modified layer 16 are sequentially formed on the side of the P-type semiconductor layer 14 facing away from the substrate.

S104: as shown in fig. 1, an insulating protective layer 17 is formed on a side of the epitaxial layer structure facing away from the substrate 11, and the modification layer 16 is located between the transparent conductive layer 15 and the insulating protective layer 17.

In this embodiment, by providing the modification layer 16 between the transparent conductive layer 15 and the insulating protection layer 17, the modification layer 16 serves to alleviate the lattice mismatch problem between the transparent conductive layer 15 and the insulating protection layer 17; on one hand, the directly grown modified layer 16 does not destroy the state of the dangling bond on the surface of the transparent conductive layer 15, so that the adhesion between the transparent conductive layer 15 and the modified layer 16 is extremely strong; on the other hand, the lattice mismatch between the modified layer 16 and the insulating protective layer 17 is small, and the adhesion between the two is good; furthermore, by providing the modified layer 16, the adhesion between the transparent conductive layer 15 and the insulating protective layer 17 in contact therewith can be greatly improved, and the structural stability of the LED chip can be further improved.

Moreover, the modified layer 16 not only improves the structural stability of the LED chip structure, but also can be used as a hard mask of the transparent conductive layer 15, so as to improve the defect of irregular etching edge of the material of the transparent conductive layer 15, thereby improving the reliability of the electrostatic breakdown of the LED chip.

Further, based on the above embodiment of the present invention, step S103 in the manufacturing method specifically includes:

as shown in fig. 13, the transparent conductive layer 15 is grown on the side of the epitaxial layer structure facing away from the substrate 11.

As shown in fig. 14, the modifying layer 16 is then grown on the side of the transparent conductive layer 15 facing away from the substrate 11.

As shown in fig. 12, the modification layer 16 and the transparent conductive layer 15 are then subjected to photolithography by the same photolithography process to expose the region where the first groove structure 25 is located.

As shown in fig. 15, finally, the modified layer 16 is further subjected to photolithography to form a second groove structure 27 for exposing the transparent conductive layer 15.

Further, based on the above embodiment of the present invention, the manufacturing method further includes:

as shown in fig. 2, a metal contact layer 18 is formed on the transparent conductive layer 15 by forming the second groove structure 27.

Thereafter, as shown in fig. 16, an insulating protective layer 17 is formed on the side of the epitaxial layer structure facing away from the substrate 11.

Further, based on the above embodiment of the present invention, the manufacturing method further includes:

as shown in fig. 3, the insulating protection layer 17 is etched to form a third groove structure 19 and a fourth groove structure 20 for exposing the metal contact layer 18 and the N-type semiconductor layer 12.

Further, based on the above embodiment of the present invention, the manufacturing method further includes:

as shown in fig. 4, a P electrode 21 is formed on the metal contact layer 18 through the third groove structure 19; a contacting N-electrode 22 is formed on the N-type semiconductor layer 12 through the fourth groove structure 20.

Further, in another embodiment of the present invention, step S103 in the manufacturing method may further specifically be:

as shown in fig. 13, the transparent conductive layer 15 is grown on the side of the epitaxial layer structure facing away from the substrate 11.

As shown in fig. 14, the modifying layer 16 is then grown on the side of the transparent conductive layer 15 facing away from the substrate 11.

As shown in fig. 12, the modification layer 16 and the transparent conductive layer 15 are then subjected to photolithography by the same photolithography process to expose the region where the first groove structure 25 is located.

As shown in fig. 17, the modification layer 16 and the transparent conductive layer 15 are again subjected to photolithography by the same photolithography process to form a sixth groove structure 24 for exposing the P-type semiconductor layer 14.

Finally, as shown in fig. 5, the modified layer 16 is again subjected to photolithography to enlarge the opening area of the sixth groove structure 24, so as to form a fifth groove structure 23 penetrating through the modified layer 16.

In this embodiment, the center of the fifth groove structure 23 and the center of the sixth groove structure 24 coincide.

Further, based on the above embodiment of the present invention, the manufacturing method further includes:

as shown in fig. 6, a P-electrode 21 is formed on the P-type semiconductor layer 14 through the fifth groove structure 23 and the sixth groove structure 24, and the P-electrode 21 also covers an exposed region of the transparent conductive layer 15.

A contacting N-electrode 22 is formed on the N-type semiconductor layer 12 through the first groove structure 25.

Thereafter, as shown in fig. 7, an insulating protective layer 17 is formed on the side of the epitaxial layer structure facing away from the substrate 11.

Further, based on the above embodiment of the present invention, the manufacturing method further includes:

as shown in fig. 7, the insulating protection layer 17 is etched to form an opening region for exposing the P electrode 21 and the N electrode 22.

Further, in another embodiment of the present invention, step S103 in the manufacturing method may further specifically be:

as shown in fig. 13, the transparent conductive layer 15 is grown on the side of the epitaxial layer structure facing away from the substrate 11.

As shown in fig. 14, the modifying layer 16 is then grown on the side of the transparent conductive layer 15 facing away from the substrate 11.

As shown in fig. 12, the modification layer 16 and the transparent conductive layer 15 are then subjected to photolithography by the same photolithography process to expose the region where the first groove structure 25 is located.

As shown in fig. 8, when a metal contact layer is required, a metal contact layer 18 is disposed on the modified layer 16.

As shown in fig. 8, the insulating protection layer 17 is etched to form a seventh groove structure and an eighth groove structure for exposing the metal contact layer 18 and the N-type semiconductor layer 12.

As shown in fig. 8, a P electrode 21 is formed on the metal contact layer 18 through the seventh groove structure; and forming a contacted N electrode 22 on the N-type semiconductor layer 12 through the eighth groove structure.

When the metal contact layer 18 is not required to be provided, the P electrode 21 is in contact with the modified layer 16.

The LED chip with a modified layer and the method for manufacturing the same provided by the present invention are described in detail above, and the principle and the implementation of the present invention are explained by applying specific examples herein, and the description of the above examples is only used to help understanding the method and the core idea of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the specific implementation and application scope, to sum up, the content of the present specification should not be understood as the limitation of the present invention.

It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.

It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (17)

1. An LED chip having a modification layer, the LED chip comprising:

a substrate;

an epitaxial layer structure disposed on the substrate;

the epitaxial layer structure comprises a transparent conducting layer, a modification layer and an insulating protection layer, wherein the transparent conducting layer, the modification layer and the insulating protection layer are sequentially arranged on one side, deviating from the substrate, of the epitaxial layer structure, and the modification layer is located between the transparent conducting layer and the insulating protection layer.

2. The LED chip of claim 1, wherein said epitaxial layer structure comprises:

the epitaxial layer structure comprises an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially arranged in a first direction, and further comprises a first groove structure which is used for exposing the N-type semiconductor layer in a preset area, wherein the first direction is perpendicular to the substrate and points to the epitaxial layer structure from the substrate;

the transparent conducting layer and the modified layer are sequentially arranged on one side, away from the substrate, of the P-type semiconductor layer.

3. The LED chip of claim 2, wherein said LED chip further comprises:

and the second groove structure penetrates through the modified layer and is used for exposing the transparent conducting layer.

4. The LED chip of claim 3, wherein said LED chip further comprises:

the third groove structure penetrates through the insulating protection layer and is used for exposing the transparent conducting layer;

and the fourth groove structure penetrates through the insulating protection layer and is used for exposing the N-type semiconductor layer.

5. The LED chip of claim 4, wherein said LED chip further comprises:

a metal contact layer disposed on the transparent conductive layer.

6. The LED chip of claim 2, wherein said LED chip further comprises:

a fifth groove structure penetrating through the modification layer, and a sixth groove structure penetrating through the transparent conductive layer.

7. The LED chip of claim 6, wherein said LED chip further comprises:

the P electrode is in contact with the P-type semiconductor layer through the fifth groove structure and the sixth groove structure and also covers an exposed area of the transparent conductive layer;

and the N electrode is in contact with the N-type semiconductor layer through the first groove structure.

8. The LED chip of claim 7, wherein said LED chip further comprises:

a metal contact layer disposed between the P-type semiconductor layer and the P-electrode.

9. The LED chip of any of claims 1-8, wherein said modification layer is an insulating modification layer or a conductive modification layer;

the insulation modification layer at least comprises MgF, MgO, BeO and TiO_x、CrO₂、ZrO₂、HfO₂、Ni₂O₃、SiO₂、Al₂O₃、B₂O₃、In₂O₃、GeO₂、SnO₂And SiN_xOne of (1);

the conductive modified layer at least comprises Al-doped ZnO or Sn-doped ln₂O₃。

10. The LED chip of claim 9, wherein said insulation modification layer is a multilayer structure;

the insulation modification layer includes: the base insulating layer is adjacent to one side of the substrate, and the other film layers are arranged on the side, away from the substrate, of the base insulating layer;

wherein the other film layers are insulating layers or non-insulating layers or stacked film layers;

the stacked film layer is a stacked film layer of a plurality of insulating layers, or a stacked film layer of a plurality of non-insulating layers, or a stacked film layer of a non-insulating layer and an insulating layer.

11. The LED chip of claim 10, wherein said base insulating layer and said insulating layer are of MgF, MgO, BeO, TiO_x、CrO₂、ZrO₂、HfO₂、Ni₂O₃、SiO₂、Al₂O₃、B₂O₃、In₂O₃、GeO₂、SnO₂And SiN_xOne of (1);

the non-insulating layer is made of a material with the forbidden band width of 0 or a material with the forbidden band width of less than 4.0V;

the non-insulating layer is a high-reflection layer, and the material of the high-reflection layer is one of Ag, Al, Ti, Pt, Au, Cu and Mo.

12. The LED chip of claim 2, wherein said modifying layer and said transparent conductive layer are a full-face film structure.

13. The LED chip of claim 12, wherein said LED chip further comprises:

a seventh groove structure penetrating through the insulating protection layer and used for exposing the modification layer;

and the eighth groove structure penetrates through the insulating protective layer and is used for exposing the N-type semiconductor layer.

14. The LED chip of claim 13, wherein said LED chip further comprises:

a metal contact layer disposed on the modified layer.

15. The LED chip of any of claims 12-14, wherein said modifying layer is a conductive modifying layer;

the conductive modified layer at least comprises Al-doped ZnO or Sn-doped ln₂O₃。

16. The LED chip of claim 1, wherein said modifying layer has a lattice parameter between the lattice parameter of said transparent conductive layer and the lattice parameter of said insulating protective layer.

17. The LED chip of claim 1, wherein the coefficient of thermal expansion of the modifying layer is between the coefficient of thermal expansion of the transparent conductive layer and the coefficient of thermal expansion of the insulating protective layer.

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