CN1945862A - Semiconductor LED structure with high extracting efficiency and its preparing method - Google Patents
Semiconductor LED structure with high extracting efficiency and its preparing method Download PDFInfo
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- CN1945862A CN1945862A CNA2006101140809A CN200610114080A CN1945862A CN 1945862 A CN1945862 A CN 1945862A CN A2006101140809 A CNA2006101140809 A CN A2006101140809A CN 200610114080 A CN200610114080 A CN 200610114080A CN 1945862 A CN1945862 A CN 1945862A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title description 15
- 238000000576 coating method Methods 0.000 claims abstract description 101
- 239000011248 coating agent Substances 0.000 claims abstract description 100
- 230000003287 optical effect Effects 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000002360 preparation method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 238000004070 electrodeposition Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000003776 cleavage reaction Methods 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 230000007017 scission Effects 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 8
- 229910020776 SixNy Inorganic materials 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 12
- 230000003667 anti-reflective effect Effects 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000026267 regulation of growth Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Abstract
This invention puts forward that a compound reflection reducing coating composed of an ITO transparent conduction film and a SixNy medium film is grown on a LED epitaxial plate, in which, the optical thickness of the ITO transparent conduction film is the integral times of the half LED emission wavelength, the optical thickness of the SixNy medium film is the odd times of the quarter LED emission wave length, the refractive rate of the SixNy is the evolution of that of the top semiconductor material of the LED epitaxial plate, which can lower the interface reflection rate to the lowest to realize the best reflection reduction and increase foreign quanta effect.
Description
One. technical field
The invention belongs to optoelectronic device manufacturing technology field, relate to structure and the preparation method of a kind of raising semiconductor light-emitting-diode (LED) extraction efficiency, be suitable for the semiconductor LED of multi-wavelength's (ruddiness, blue light, green glow etc.).
Two. background technology
Semiconductor light-emitting-diode is a kind of energy-saving and environmental protection and long-life luminescent device. The LED energy consumption is 10% of incandescent lamp, 50% of fluorescent lamp. LED adopts solid encapsulation, sound construction, and the life-span reaches 100,000 hours, is 10 times of fluorescent lamp, 100 times of incandescent lamp. Aspect environmental protection, with LED replace incandescent or fluorescent lamp, need not to use glass evacuated encapsulation, without the pollution of poison gas and mercury. And of many uses, can be applied to the every articles for use in the daily life, such as the indicator lamp of various household electrical appliances or light source etc. In recent years more because the development trend of multicolour and high brightness is applied in the fields such as landscape light in city, road and traffic indication, indoor and outdoor decorative lighting, full-color large screen display, automobile lamp.
In order to obtain the light emitting diode of high brightness, key is to improve the external quantum efficiency of device. Yet the N-shaped electrode of chip is the face electrode, than large many of top electrode, so when forward bias, the carrier that injects can not be even as very fast expansion metal, but in semi-conducting material, expand radially, if current expansion is bad, the electric current of injection mainly concentrates on the electrode below, so so that a large amount of photons that active area sends below electrode by the stopping of electrode, can not outgoing and be lost in LED inside. In addition, the semi-conducting material of preparation light emitting diode and the refractive index difference of air are large, cause the little and boundary reflection rate height of shooting angle of light. Be n when light incides refractive index1And n2In the time of on the interface of two kinds of materials, incidence angle θ1With refraction angle θ2Observe Si Nieer rule, i.e. n1sinθ
1＝n
2sinθ
2 The refractive index of the semi-conducting material of light emitting diode is very high, for example desirable n1＝3.6，n
2Be air, the critical angle that this crystal and air have a common boundary is θ1＝sin
-1(1/n
1) 16.2 ° of ≈, incidence angle forms total reflection during greater than critical angle. With regard to regard to the recombination luminescence of every uniform emission in the 4 π solid angles, the light in the critical angle only accounts for Light in the critical angle also can some can be reflected back by the surface to inside. For example, when the light vertical incidence, then reflectivity is (n1-1)
2/(n
1+1)
2≈ 0.32. If the light that is reflected back can not from other surperficial outgoing, will be absorbed in LED inside. A large amount of light losses is inner at LED, only has the light of seldom measuring can shine the outside, causes the external quantum efficiency of LED low, and external quantum efficiency is low just to mean that also extraction efficiency is low, and the light intensity value of LED is low.
Three. summary of the invention
The objective of the invention is to propose at LED epitaxial wafer growth ITO nesa coating and SixN
yThe compound anti-reflection membrane structure that deielectric-coating forms when realizing good current expansion, can drop to the boundary reflection rate the minimum best anti-reflection effect that realizes, thereby improve external quantum efficiency greatly.
Although the indium tin oxide of individual layer (ITO) nesa coating can be realized the current expansion effect, be difficult to realize best antireflective effect. The condition of desirable single layer anti reflective coating is, the optical thickness of rete is quarter-wave odd-multiple, and its refractive index is the square root of incident medium and substrate refractive index product. The refractive index of ITO nesa coating is about 1.7, if incident medium is air, the refractive index of air is 1, hence one can see that, only have when base material be 2.89, and the optical thickness of ITO nesa coating can reach best antireflective effect when being the odd-multiple of four minutes wavelength. But the refractive index of the semi-conducting material on the surface of red light-emitting diode is approximately about 3.5, therefore for when realizing good current expansion effect, reach best antireflective effect, we have designed in thin GaP layer preparation by ITO nesa coating and SixN
yThe formed compound anti-reflection film of deielectric-coating improves the extraction efficiency of light emitting diode. The optical thickness of design ITO nesa coating is the integral multiple of 1/2nd LED emission wavelengths, SixN
yThe optical thickness of deielectric-coating is the odd-multiple of 1/4th LED emission wavelengths, SixN
yThe refractive index of deielectric-coating is the evolution of the refractive index of LED epitaxial wafer the superiors semi-conducting material. When a kind of optical thickness of rete is the integral multiple of 1/2nd wavelength, this rete will become absentee layer, that is to say, reflectivity for centre wavelength is had no effect, can not be as the lower time of situation of best anti-reflection film at the ITO film, we are designed to its optical thickness the integral multiple of 1/2nd wavelength, make its reflectivity for the emission wavelength of the light emitting diode of the upper ITO film of growth not play any impact, then use plasma enhanced chemical vapor deposition (PECVD) equipment regrowth one deck Si on ITOxN
yDeielectric-coating (amorphous film), the refractive index that makes it are the square root of semi-conducting material refractive index below the ITO nesa coating, and optical thickness is quarter-wave odd-multiple. Obtain needed Si with PECVD equipment by the growth regulation parameterxN
yThe refractive index of deielectric-coating. After technological parameter was determined, the speed of growth remained unchanged substantially, can control Si by the control growth timexN
yThe physical thickness of deielectric-coating. This method technique is simple, implements easily.
The epitaxial wafer basic structure of LED is the N-type semiconductor 7 of growing successively on substrate 8, MQW active area 6, P-type semiconductor 5, GaP layer 4. ITO nesa coating and the Si of our designxN
yThe compound anti-reflection film that deielectric-coating forms is grown on the semiconductor surface of the epitaxial wafer the superiors. The optical thickness of design ITO nesa coating 3 is the integral multiple of 1/2nd LED emission wavelengths, SixN
yThe optical thickness of deielectric-coating 2 is the odd-multiple of 1/4th LED emission wavelengths, SixN
yThe refractive index of deielectric-coating 2 is evolutions of the refractive index of LED epitaxial wafer the superiors semi-conducting material.
The invention provides a kind of semiconductor LED structure of high extracting efficiency, comprise the LED epitaxial wafer, it is characterized in that on the superiors' semiconductor material surface of LED epitaxial wafer growing optics thickness successively is that ITO nesa coating 3 and the optical thickness of 1/2 wavelength integral multiple is the Si of 1/4 wavelength odd-multiplexN
yDeielectric-coating 2, and SixN
yThe refractive index of deielectric-coating 2 is the evolution of the refractive index of LED epitaxial wafer the superiors semi-conducting material, and the bottom of P electrode 1 directly contacts with ITO nesa coating 3, the sidewall of P electrode 1 and SixN
yDeielectric-coating 2 directly contacts.
Characteristics of the present invention are the following technical process of its employing:
1) preparation LED epitaxial wafer;
2) growing optics thickness is the ITO nesa coating 3 of 1/2nd LED emission wavelength integral multiples on the superiors' semiconductor material surface of LED epitaxial wafer, can be good at realizing the current expansion effect;
3) on ITO nesa coating 3, use plasma enhanced chemical vapor deposition method (PECVD) preparation SixN
yDeielectric-coating 2 uses silane and nitrogen to prepare SixN
yDeielectric-coating 2, its optical thickness are the odd-multiple of 1/4th LED emission wavelengths, and refractive index is the evolution of the refractive index of LED epitaxial wafer the superiors semi-conducting material, SixN
yDeielectric-coating 2 forms the compound anti-reflection film with 3 actings in conjunction of ITO nesa coating, can realize best antireflective effect;
4) preparation of P electrode 1: at SixN
yDeielectric-coating 2 surperficial whirl coatings, photoetching, development erode the Si of electrode positionxN
yDeielectric-coating 2, evaporated metal electrode in the above then, ultrasonic peeling off, the metal that only stays electrode position forms P electrode 1, so that the bottom of P electrode 1 directly contacts the sidewall of P electrode 1 and Si with ITO nesa coating 3xN
yDeielectric-coating 2 directly contacts;
5) then with substrate 8 attenuates of LED epitaxial wafer, steam metal at substrate 8 and form N electrode 9;
6) cleavage.
This ITO nesa coating 3 and SixN
yThe compound anti-reflection membrane structure that deielectric-coating 2 forms is not only applicable to red-light LED, and is applicable to the LED of the GaN base of blue light and green glow, can reach best antireflective effect in the current expansion effect that GaN base LED plays. For GaN base LED because preparation GaN substrate is very difficult, so usually adopt at sapphire as substrate, and then on Sapphire Substrate growing GaN cushion successively, N-type GaN material, Multiple-quantum active area, P type GaN material. Because Sapphire Substrate electric conductivity and poor thermal conductivity, N-type electrode and P type electrode all are that preparation is at upper surface. When the ITO nesa coating was used for the current extending of GaN base LED, optical thickness was the integral multiple of 1/2nd LED emission wavelength equally. Then Si grows on ITOxN
yDeielectric-coating 2, optical thickness are the odd-multiple of 1/4th LED emission wavelength, SixN
yThe refractive index of deielectric-coating 2 then is the square root of the P-type semiconductor Refractive Index of Material of GaN base LED. The LED of GaN base blue light, green glow compares with red-light LED, although the preparation process of preparation LED epitaxial wafer materials and devices is different, at LED epitaxial wafer growth ITO nesa coating 3 and SixN
yThe design principle of the compound anti-reflection membrane structure that deielectric-coating 2 forms is consistent. The optical thickness of design ITO nesa coating 3 is the integral multiple of 1/2nd LED emission wavelengths, SixN
yThe optical thickness of deielectric-coating 2 is the odd-multiple of 1/4th LED emission wavelengths, SixN
yThe refractive index of deielectric-coating 2 is evolutions of the refractive index of LED epitaxial wafer the superiors semi-conducting material. Can adopt following process to prepare GaN base LED device: the GaN base LED epitaxial wafer is the ITO nesa coating of the integral multiple of 1/2nd LED emission wavelengths with the ITO vapo(u)rization system at the semi-conducting material evaporation optical thickness of the superiors of LED epitaxial wafer first, then usually with photoresist or SiO2Be mask, adopt successively etching P type GaN semi-conducting material of ICP etching method, the Multiple-quantum active area is until then N-type GaN material prepares respectively N electrode and P electrode, regrowth Si respectively on N-type GaN material and P type GaN materialxN
yDeielectric-coating 2, optical thickness are the odd-multiple of 1/4th LED emission wavelength, SixN
yThe refractive index of deielectric-coating 2 then is the evolution of the refractive index of GaN base LED epitaxial wafer the superiors semi-conducting material. Then adopt the method for photoetching corrosion, come out in the position of N electrode and P electrode. The bottom of P electrode directly contacts with the ITO nesa coating, the sidewall of P electrode and SixN
yDeielectric-coating 2 directly contacts. The N electrode does not contact with the LED sidewall, and the bottom of N electrode directly contacts with N-type GaN semi-conducting material.
ITO nesa coating 3 and SixN
yDeielectric-coating 2 has very high transmitance in visible light and near infrared range, the semi-conducting material of photoelectron luminescent device and the difference of air refraction are the roots that causes producing the boundary reflection rate, therefore in order to reduce the boundary reflection rate, reach best antireflective effect, this compound anti-reflection film also is applicable to other photoelectron luminescent device, be used for reducing surface reflectivity, improve light output. The design principle of this compound anti-reflection film also is identical, and the optical thickness of ITO nesa coating 3 is the integral multiple of 1/2nd LED emission wavelengths, SixN
yThe optical thickness of deielectric-coating 2 is the odd-multiple of 1/4th LED emission wavelengths, SixN
yThe refractive index of deielectric-coating 2 is evolutions of the refractive index of photoelectron light-emitting device epitaxial wafer the superiors semi-conducting material.
Structural design and the process of foregoing invention have the following advantages:
1) adopting optical thickness is that the ITO nesa coating 3 of the integral multiple of 1/2nd LED emission wavelengths can be good at realizing the current expansion effect;
2) Si that adoptsxN
yThe evolution of the refractive index of the refractive index LED epitaxial wafer the superiors semi-conducting material of deielectric-coating 2, optical thickness is the odd-multiple of 1/4th LED emission wavelengths, can be combined to form the compound anti-reflection film with ITO nesa coating 3 and reach best antireflective effect;
3) use PECVD to prepare SixN
yDeielectric-coating 2 can be by the growth regulation technological parameter flexibly with SixN
yThe refractive index of deielectric-coating 2 is adjusted to needed numerical value, implements easily;
4) adopt ITO nesa coating 3 and SixN
yMedium 2 film formed composite membranes can be good at realizing current expansion and reach best antireflective effect, surface reflectivity can be reduced to 0 in theory, improve the light extraction efficiency of LED, at device growth ITO nesa coating 3 and SixN
yBehind the compound anti-reflection film that deielectric-coating 2 forms, light intensity can improve more than 130%.
Four. description of drawings
Fig. 1 is with ITO nesa coating and SixN
yThe profile 1-P electrode of the LED of the compound anti-reflection film that deielectric-coating consists of, 2-SixN
yDeielectric-coating, 3-ITO nesa coating, 4-GaP layer, 5-P type semiconductor, 6-MQW active area, 7-N type semiconductor, 8-substrate, 9-N electrode;
Five. the specific embodiment
Comparative Examples:
1) preparation red-light LED epitaxial wafer, the N-type semiconductor 7 of namely on substrate 8, growing successively, MQW active area 6, P-type semiconductor 5, GaP layer 4;
2) preparation of P electrode 1: will put in the metal electrode sputtering system chamber with the sample of 50nm GaP layer 4 with acetone and absolute ethyl alcohol and washed with de-ionized water, sputter AuZnAu, then do with photoresist protection, with metal erosion liquid the partial corrosion beyond the P electrode 1 is fallen, the metal that only stays electrode position forms P electrode 1;
3) then with substrate 8 attenuates, evaporated metal AuGeNi forms N electrode 9 on substrate 8;
4) cleavage.
Use light intensity test equipment that 8 tube cores that only have 50nmGaP are tested. Under the 20mA constant current, average voltage is 2.22V, and light intensity mean value is 49mcd.
Embodiment:
1) preparation red-light LED epitaxial wafer, the N-type semiconductor 7 of namely on substrate 8, growing successively, MQW active area 6, P-type semiconductor 5, GaP layer 4, the superiors' semi-conducting material of this LED epitaxial wafer is GaP layer 4;
2) will put into ITO electron beam evaporation platform with the sample that acetone and absolute ethyl alcohol and washed with de-ionized water are crossed, growing optics thickness is the ITO nesa coating 3 of 1/2 wavelength on GaP layer 4, growth temperature is 190 ℃, and oxygen flow is 3sccm, and evaporation rate is 0.2nm/s; (in the preparation process of reality, according to the situation of own equipment, can adjust flexibly these growthing process parameters such as growth temperature, oxygen flow, prepare needed ITO nesa coating 3);
3) use PECVD equipment at ITO nesa coating 3 Si that growsxN
yDeielectric-coating 2: depositing temperature is 300 ℃, and 13.56MHz high frequency pumping source power is 20W, passes into purity and be 5% silane and high pure nitrogen, and their flow is respectively 30sccm, 900sccm, the Si of growthxN
yDeielectric-coating 2 optical thicknesses are 1/4th LED emission wavelengths, and refractive index is the evolution of GaP layer 4 refractive index, and the refractive index that namely 85nm is thick is 1.82 SixN
yDeielectric-coating 2; (using PECVD to prepare in the process of deielectric-coating, can adjust flexibly temperature, gas flow, these growthing process parameters such as high frequency pumping source power are prepared needed SixN
yDeielectric-coating 2);
4) preparation of P electrode 1: at SixN
yWhirl coating, photoetching, development on the deielectric-coating 2 erode the Si of electrode positionxN
yDeielectric-coating 2, evaporated metal electrode Cr/Au in the above then, ultrasonic peeling off, the metal that only stays electrode position forms P electrode 1, so that the bottom of P electrode 1 directly contacts the sidewall of P electrode 1 and Si with ITO nesa coating 3xN
yDeielectric-coating 2 directly contacts;
5) then with substrate 8 attenuates, steam metal A uGeNi at substrate 8 and form N electrode 9;
6) cleavage.
Using light intensity test equipment is that ITO nesa coating and the optical thickness of 1/2 wavelength is the Si of 1/4th LED emission wavelengths to growing optics thickness on the 50nmGaP layer 4xN
y8 tube cores of deielectric-coating are tested. Under the 20mA constant current, average voltage is 1.94V, and light intensity is 118.6mcd., compares with the LED that only has 50nmGaP, and light intensity has improved 142%, lower voltage 12.6%. This illustrates this kind design and processes process when improving the output of LED light, and the electrical characteristics of device do not degenerate.
Those skilled in the art know, the material of preparation blue light, green light LED epitaxial wafer and red-light LED epitaxial wafer different. Preparation ITO nesa coating 3 and Si on indigo plant, the green light LED devicexN
yThe design principle of the compound anti-reflection film that deielectric-coating 2 forms is consistent, all is the superiors' semi-conducting material growth ITO nesa coating and Si at structure LED epitaxial waferxN
yDeielectric-coating 2, and ITO nesa coating and the Si of preparation on blue light, green light LEDxN
yThe process of deielectric-coating 2 is consistent.
Claims (2)
1, a kind of semiconductor LED structure of high extracting efficiency, comprise the LED epitaxial wafer, it is characterized in that on the superiors' semiconductor material surface of LED epitaxial wafer growing optics thickness successively is that ITO nesa coating (3) and the optical thickness of 1/2 wavelength integral multiple is the Si of 1/4 wavelength odd-multiplexN
yDeielectric-coating (2), and SixN
yThe refractive index of deielectric-coating (2) is the evolution of the refractive index of LED epitaxial wafer the superiors semi-conducting material, and the bottom of P electrode (1) directly contacts with ITO nesa coating (3), sidewall and the Si of P electrode (1)xN
yDeielectric-coating (2) directly contacts.
2, the preparation method of the semiconductor LED structure of high extracting efficiency according to claim 1 is characterized in that, may further comprise the steps:
1) preparation LED epitaxial wafer;
2) growing optics thickness is the thick ITO transparency conducting layer (3) of 1/2 wavelength on the superiors' semiconductor material surface of LED epitaxial wafer;
3) on ITO transparency conducting layer (3), use the standby Si of plasma enhanced chemical vapor deposition legal systemxN
yDeielectric-coating (2) uses silane and nitrogen to prepare SixN
yDeielectric-coating (2), its optical thickness are 1/4th LED emission wavelengths, and refractive index is the evolution of refractive index on the superiors' semiconductor material surface of LED epitaxial wafer;
4) preparation of P electrode (1): at SixN
yThe surperficial whirl coating of deielectric-coating (2), photoetching, development erode the Si of electrode positionxN
yDeielectric-coating (2), then evaporated metal electrode in the above, ultrasonic peeling off, the metal that only stays electrode position forms P electrode (1), so that the bottom of P electrode (1) directly contacts sidewall and the Si of P electrode (1) with ITO nesa coating (3)xN
yDeielectric-coating (2) directly contacts;
5) then with substrate (8) attenuate of LED epitaxial wafer, steam metal at substrate (8) and form N electrode (9);
6) cleavage.
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|---|---|---|---|
| CNB2006101140809A CN100375304C (en) | 2006-10-27 | 2006-10-27 | Semiconductor LED structure with high extracting efficiency and its preparing method |
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Cited By (4)
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| CN102280552A (en) * | 2010-06-14 | 2011-12-14 | 鸿富锦精密工业（深圳）有限公司 | Light emitting diode crystal grain and manufacture method thereof |
| CN102280551A (en) * | 2010-06-08 | 2011-12-14 | 鸿富锦精密工业（深圳）有限公司 | Light emitting diode and manufacturing method thereof |
| CN106025012A (en) * | 2016-07-26 | 2016-10-12 | 湘能华磊光电股份有限公司 | Preparation method of LED chip and LED chip prepared by adopting method |
| CN114497325A (en) * | 2022-01-14 | 2022-05-13 | 武汉大学 | Quantum dot embedded full-color Micro-LED display chip and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6720585B1 (en) * | 2001-01-16 | 2004-04-13 | Optical Communication Products, Inc. | Low thermal impedance DBR for optoelectronic devices |
| JP2003107241A (en) * | 2001-09-28 | 2003-04-09 | Nagoya Industrial Science Research Inst | Multi-layered reflecting film |
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2006
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102280551A (en) * | 2010-06-08 | 2011-12-14 | 鸿富锦精密工业（深圳）有限公司 | Light emitting diode and manufacturing method thereof |
| CN102280551B (en) * | 2010-06-08 | 2015-08-05 | 鸿富锦精密工业（深圳）有限公司 | Light-emitting diode and manufacture method thereof |
| CN102280552A (en) * | 2010-06-14 | 2011-12-14 | 鸿富锦精密工业（深圳）有限公司 | Light emitting diode crystal grain and manufacture method thereof |
| CN102280552B (en) * | 2010-06-14 | 2015-06-03 | 鸿富锦精密工业（深圳）有限公司 | Light emitting diode crystal grain and manufacture method thereof |
| CN106025012A (en) * | 2016-07-26 | 2016-10-12 | 湘能华磊光电股份有限公司 | Preparation method of LED chip and LED chip prepared by adopting method |
| CN114497325A (en) * | 2022-01-14 | 2022-05-13 | 武汉大学 | Quantum dot embedded full-color Micro-LED display chip and preparation method thereof |
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