CN101226980A - A light-emitting diode device that uses photonic crystal structure to suppress side light emission - Google Patents
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 238000000609 electron-beam lithography Methods 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 229910005540 GaP Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims 11
- 238000007598 dipping method Methods 0.000 claims 2
- 230000008020 evaporation Effects 0.000 claims 2
- 229910017083 AlN Inorganic materials 0.000 claims 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- URRHWTYOQNLUKY-UHFFFAOYSA-N [AlH3].[P] Chemical compound [AlH3].[P] URRHWTYOQNLUKY-UHFFFAOYSA-N 0.000 claims 1
- -1 aluminium arsenic Chemical compound 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 238000001259 photo etching Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 3
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
本发明公开了一种利用光子晶体结构抑制侧向出光的发光二极管器件,其包括衬底及层叠于衬底之上的半导体外延层,该半导体外延叠层包含N型层、发光层和P型层,P型层上设置有P型电极,部分半导体外延叠层被刻蚀至N型层,露出的部分N型层上设置有N型电极,其中,在发光二极管芯片的边缘设有贯穿于半导体外延叠层的二维光子晶体结构,该光子晶体是由电介质常数呈周期性变化的介质柱构成。本发明可以抑制发光二极管侧向的出光,有效地提高正面的出光效率。另外,本发明还提供了利用光子晶体结构抑制侧向出光的发光二极管器件的制造方法。
The invention discloses a light-emitting diode device that uses a photonic crystal structure to suppress lateral light output, which includes a substrate and a semiconductor epitaxial layer stacked on the substrate, and the semiconductor epitaxial stack includes an N-type layer, a light-emitting layer and a P-type layer. layer, the P-type layer is provided with a P-type electrode, part of the semiconductor epitaxial stack is etched to the N-type layer, and the exposed part of the N-type layer is provided with an N-type electrode, wherein the edge of the light-emitting diode chip is provided with a penetrating A two-dimensional photonic crystal structure of semiconductor epitaxial stacks, the photonic crystal is composed of dielectric columns whose dielectric constants change periodically. The invention can suppress the light output from the side of the light emitting diode, and effectively improve the light output efficiency of the front side. In addition, the invention also provides a manufacturing method of a light-emitting diode device using a photonic crystal structure to suppress side light emission.
Description
技术领域technical field
本发明涉及半导体发光器件及其制造方法,尤其涉及一种利用光子晶体结构抑制侧向出光的发光二极管器件及其制造方法。The invention relates to a semiconductor light-emitting device and a manufacturing method thereof, in particular to a light-emitting diode device that uses a photonic crystal structure to suppress side light emission and a manufacturing method thereof.
背景技术Background technique
III-V族化合物半导体材料在发光二极管、半导体激光器、探测器,及电子器件方面有着广泛的应用。发光二极管芯片是通过在外延片基板生长N型层,单量子井/多量子井发光层,P型层而获得,另外还可以有选择地生长缓冲层和电流扩展层等。不同层之间以及器件与外部介质之间的电介质常数的不同,使得发光二极管芯片在垂直于层结构的方向形成了折射率的变化。从芯片发光层发出的光,在出射到器件外部的过程中,将经历层结构之间的折射率的变化,一部分的光线会被反射回来,特别是从光密介质进入光疏介质时,出射角大于临界角的光线在界面处会发生全反射,其结果是有一部分光被反射回来,并经过多次反射后从侧面出去,这样使芯片正面的出光减少。为了收集从侧向出来的光,在芯片封装结构的设计中采用反光杯碗及杯碗上面蒸镀的高反射层等方法,但对于白光发光二极管,反光杯碗反射回来的侧向出射光会引起光色的不均匀,出现黄圈现象。III-V compound semiconductor materials are widely used in light-emitting diodes, semiconductor lasers, detectors, and electronic devices. The light-emitting diode chip is obtained by growing an N-type layer, a single quantum well/multi-quantum well light-emitting layer, and a P-type layer on an epitaxial wafer substrate. In addition, a buffer layer and a current spreading layer can also be selectively grown. The difference in dielectric constant between different layers and between the device and the external medium makes the light-emitting diode chip form a change in refractive index in a direction perpendicular to the layer structure. The light emitted from the light-emitting layer of the chip will undergo a change in the refractive index between the layer structures during the process of exiting the device, and a part of the light will be reflected back, especially when entering the optically thinner medium from the optically denser medium. The light with an angle greater than the critical angle will be totally reflected at the interface, and as a result, a part of the light will be reflected back and go out from the side after multiple reflections, which reduces the light output from the front of the chip. In order to collect the light coming out from the side, methods such as reflective cups and bowls and highly reflective layers evaporated on the cups and bowls are used in the design of the chip packaging structure. Cause uneven light color, appear yellow circle phenomenon.
为提高正面出光的效率,采用电介质常数相近的材料以减少层与层之间折射率差,粗化出光面表面或制作二维光子晶体结构以破坏全反射界面,增大芯片尺寸以增加光线从正面出去的机会等手段。虽然上述的方法能一定程度上提高了正面出光,但根据发光二极管的发光机制,它是自发辐射,发光层发出的光是各向同性的,正常情况下侧向出光是不可避免的。In order to improve the efficiency of front light output, materials with similar dielectric constants are used to reduce the refractive index difference between layers, the surface of the light output surface is roughened or a two-dimensional photonic crystal structure is made to destroy the total reflection interface, and the size of the chip is increased to increase the light from the surface. Opportunities to go out frontally and other means. Although the above method can improve the front light emission to a certain extent, according to the light emitting mechanism of the light emitting diode, it is spontaneous emission, and the light emitted by the light emitting layer is isotropic, and the side light emission is inevitable under normal circumstances.
光子晶体是一种电介质常数周期性变化的结构,其主要的特点是具有完全光子带隙,当光子能量处在完全光子带隙内时,光子将被反射,因此,利用光子晶体结构,可以制作反射率非常好的界面,甚至全角度的全反射界面。目前,发光二极管中所应用的二维光子晶体,主要是在出光面上制作周期的空气柱或介质柱,以提高表面出光的效率。然而,此种光子晶体结构的光子带隙只对侧向出射的光子产生作用,对表面出射的光子并没有起到直接的作用,实际上只是相当于规则的表面粗化作用。如何在发光二极管器件中直接利用二维光子晶体的带隙作用,而又不增加工艺的复杂性,是提高发光二极管出光效率的一个重要课题。Photonic crystal is a structure whose dielectric constant changes periodically. Its main feature is that it has a complete photonic band gap. When the photon energy is within the complete photonic band gap, photons will be reflected. Therefore, using the photonic crystal structure, it is possible to make The interface with very good reflectivity, even a fully reflective interface with all angles. At present, the two-dimensional photonic crystals used in light-emitting diodes are mainly made of periodic air columns or dielectric columns on the light-emitting surface to improve the light-emitting efficiency of the surface. However, the photonic bandgap of this photonic crystal structure only has an effect on the photons emitted from the side, and has no direct effect on the photons emitted from the surface. In fact, it is equivalent to a regular surface roughening effect. How to directly use the bandgap effect of two-dimensional photonic crystals in light-emitting diode devices without increasing the complexity of the process is an important issue to improve the light-emitting efficiency of light-emitting diodes.
发明内容Contents of the invention
本发明提出了一种利用二维光子晶体结构抑制侧向出光的发光二极管器件,该结构能够有效地提高正面出光效率。另外,本发明还提供了一种利用光子晶体结构抑制侧向出光的发光二极管器件的制造方法。The invention proposes a light-emitting diode device that uses a two-dimensional photonic crystal structure to suppress side light output, and the structure can effectively improve front light output efficiency. In addition, the invention also provides a method for manufacturing a light emitting diode device that uses a photonic crystal structure to suppress side light emission.
为了实现上述目的,本发明采用如下技术方案:In order to achieve the above object, the present invention adopts the following technical solutions:
一种利用光子晶体结构抑制侧向出光的发光二极管器件,其包括衬底及层叠于衬底之上的半导体外延层,该半导体外延叠层包含N型层、发光层和P型层,P型层上设置有P型电极,部分半导体外延叠层被刻蚀至N型层,露出的部分N型层上设置有N型电极,其中,在发光二极管芯片的边缘设有贯穿于半导体外延叠层的二维光子晶体结构,该光子晶体是由电介质常数呈周期性变化的介质柱构成。A light-emitting diode device that uses a photonic crystal structure to suppress lateral light emission, which includes a substrate and a semiconductor epitaxial layer stacked on the substrate. The semiconductor epitaxial stack includes an N-type layer, a light-emitting layer, and a P-type layer. The P-type A P-type electrode is set on the layer, and part of the semiconductor epitaxial stack is etched to the N-type layer, and an N-type electrode is set on the exposed part of the N-type layer. The two-dimensional photonic crystal structure, the photonic crystal is composed of dielectric pillars whose dielectric constant changes periodically.
其中,上述介质柱中填充的介质可为与半导体外延叠层材料的折射率不同的电介质材料或空气。Wherein, the medium filled in the above-mentioned dielectric column may be a dielectric material or air having a refractive index different from that of the semiconductor epitaxial stack material.
介质柱的尺寸及其所形成的晶格的周期与发光层辐射的光波波长处于同一数量级,具体为50nm~900nm;由介质柱所形成的光子晶体相对发光层的辐射频率为二维光子带隙;由介质柱所形成的光子晶体的晶格为长方晶格、三角晶格、六角晶格或超晶格结构。The size of the dielectric pillars and the period of the lattice formed by them are in the same order of magnitude as the wavelength of light radiated by the light-emitting layer, specifically 50nm to 900nm; the radiation frequency of the photonic crystal formed by the dielectric pillars relative to the light-emitting layer is a two-dimensional photonic bandgap ; The lattice of the photonic crystal formed by the dielectric pillar is a rectangular lattice, a triangular lattice, a hexagonal lattice or a superlattice structure.
介质柱还贯穿部分或全部衬底。The dielectric pillars also penetrate part or all of the substrate.
该发光二极管芯片的发光区域为圆形或方形结构,N型电极呈环状或扇型结构,P型电极呈圆形或方形结构。The light-emitting area of the light-emitting diode chip has a circular or square structure, the N-type electrode has a ring-shaped or fan-shaped structure, and the P-type electrode has a circular or square structure.
衬底为蓝宝石、硅、氧化锌、氮化铝或氮化镓材料,半导体外延叠层由铟镓铝氮(InxGayAl1-x-yN,0<=x<=1,0<=y<=1)材料构成。The substrate is sapphire, silicon, zinc oxide, aluminum nitride or gallium nitride, and the semiconductor epitaxial stack is made of indium gallium aluminum nitrogen (In x Ga y Al 1-xy N, 0<=x<=1, 0<= y<=1) Material composition.
衬底为砷化镓或磷化镓材料,半导体外延叠层由铟镓铝磷(InxGayA1-x-yP,0<=x<=1,0<=y<=1)或铝镓砷(AlxGa1-xAs,0<=x<=1)材料构成。The substrate is gallium arsenide or gallium phosphide material, and the semiconductor epitaxial stack is made of indium gallium aluminum phosphide (In x Ga y A 1-xy P, 0<=x<=1, 0<=y<=1) or aluminum Made of gallium arsenide (Al x Ga 1-x As, 0<=x<=1) material.
半导体外延叠层与衬底之间还设置有一缓冲层,P型层与P型电极之间还设有透明电极。A buffer layer is also arranged between the semiconductor epitaxy stack and the substrate, and a transparent electrode is also arranged between the P-type layer and the P-type electrode.
另外,本发明还提供了一种利用光子晶体结构抑制侧向出光的发光二极管器件的制造方法,其步骤包括:In addition, the present invention also provides a method for manufacturing a light-emitting diode device that uses a photonic crystal structure to suppress side light emission, the steps of which include:
a、在衬底上沉积半导体外延叠层,该半导体外延叠层由下往上包括N型层、发光层和P型层;a. Depositing a semiconductor epitaxial stack on the substrate, the semiconductor epitaxial stack includes an N-type layer, a light-emitting layer and a P-type layer from bottom to top;
b、通过干法刻蚀工艺,将部分半导体外延叠层刻蚀到N型层;b. Etching part of the semiconductor epitaxial stack to the N-type layer through a dry etching process;
c、在露出的N型层上蒸镀N型电极,在P型层上蒸镀透明电极和P型电极;c. Evaporating an N-type electrode on the exposed N-type layer, and evaporating a transparent electrode and a P-type electrode on the P-type layer;
d、通过电子束光刻和干法刻蚀的方法,在发光二极管芯片的边缘刻蚀出贯穿于半导体外延叠层的二维光子晶体结构,该光子晶体是由电介质常数呈周期性变化的介质柱构成。d. By means of electron beam lithography and dry etching, a two-dimensional photonic crystal structure that runs through the semiconductor epitaxial stack is etched on the edge of the light-emitting diode chip. The photonic crystal is a medium whose dielectric constant changes periodically column composition.
在步骤d中,先制作光子晶体掩模板,再通过光刻和干法刻蚀工艺把掩模板花纹转到半导体外延叠层上。In step d, a photonic crystal mask is made first, and then the pattern of the mask is transferred to the semiconductor epitaxial stack by photolithography and dry etching.
通过电子束光刻和干法刻蚀的方法,将发光二极管芯片的边缘继续刻蚀至衬底内部或直至衬底底部,形成贯穿部分或全部衬底的介质柱。By means of electron beam lithography and dry etching, the edge of the light-emitting diode chip is etched to the inside of the substrate or to the bottom of the substrate to form a dielectric column penetrating part or all of the substrate.
本发明利用光子晶体结构抑制侧向出光的发光二极管器件及其制造方法,在发光区的周围制作了电介质常数呈周期性变化的介质柱,形成了一个二维光子晶体带隙,使得发光层侧向的出光被反射回器件内部,经过多次反射、吸收、再发射等过程,光子最终将从发光器件的正面射出来,从而增加了表面的出光量,提高了发光器件的出光效率。该发光二极管器件的工艺制作简单,应用发光二极管器件封装的白光二极管,能有效减少黄圈等光色不均匀现象。The invention utilizes the photonic crystal structure to suppress the light-emitting diode device and the manufacturing method thereof, and makes a dielectric column whose dielectric constant changes periodically around the light-emitting area, forming a two-dimensional photonic crystal band gap, so that the side of the light-emitting layer The directional light is reflected back into the device, and after multiple reflections, absorption, and re-emission processes, the photons will finally be emitted from the front of the light-emitting device, thereby increasing the amount of light emitted from the surface and improving the light-emitting efficiency of the light-emitting device. The technology of the light emitting diode device is simple to manufacture, and the application of the white light diode packaged by the light emitting diode device can effectively reduce the phenomenon of uneven light color such as yellow circles.
本发明还可以应用到有极发光二极管(OLED)、聚合物发光二极管(PLED)等发光器件上。The present invention can also be applied to light-emitting devices such as organic light-emitting diodes (OLEDs) and polymer light-emitting diodes (PLEDs).
附图说明:Description of drawings:
图1是本发明实施例1的半导体发光器件的结构中心剖面示意图;1 is a schematic cross-sectional view of the structure center of a semiconductor light emitting device according to
图2是本发明实施例1的半导体发光器件的结构正面示意图;2 is a schematic front view of the structure of the semiconductor light emitting device according to
图3是本发明实施例2的半导体发光器件的结构正面示意图;3 is a schematic front view of the structure of a semiconductor light emitting device according to
图4是本发明实施例3的半导体发光器件的结构中心剖面示意图。4 is a schematic cross-sectional view of the structure center of the semiconductor light emitting device according to
图5是本发明实施例4的半导体发光器件的结构中心剖面示意图。Fig. 5 is a schematic cross-sectional view of the structure center of the semiconductor light emitting device according to
上述图中,1为衬底,2为缓冲层,3为N型层,4为发光层,5为P型层,6为介质柱,7为出光面,8为P型电极,9为N型电极,10为下电极,11为透明电极,12为上电极In the above figure, 1 is the substrate, 2 is the buffer layer, 3 is the N-type layer, 4 is the light-emitting layer, 5 is the P-type layer, 6 is the dielectric column, 7 is the light-emitting surface, 8 is the P-type electrode, and 9 is the N-type electrode. Type electrode, 10 is the lower electrode, 11 is the transparent electrode, 12 is the upper electrode
具体实施方式Detailed ways
实施例1Example 1
参照图1及图2,一种利用光子晶体结构抑制侧向出光的发光二极管器件,其包括衬底1及层叠于衬底1之上的半导体外延层,该半导体外延叠层包含N型层3、发光层4和P型层5,P型层5上设置有P型电极8,部分半导体外延叠层被刻蚀至N型层3,露出的部分N型层3上设置有N型电极9,其中,在发光二极管芯片的边缘设有贯穿于半导体外延叠层的二维光子晶体结构,该光子晶体是由电介质常数呈周期性变化的介质柱6构成。Referring to FIG. 1 and FIG. 2, a light-emitting diode device that utilizes a photonic crystal structure to suppress lateral light emission includes a
其中,上述介质柱6中填充的介质可为与半导体外延叠层材料的折射率不同的电介质材料,当然也可是空气。而介质柱6的排数可根据工艺操作和预期的反射率决定,排数越多,其反射效果越好。Wherein, the medium filled in the above-mentioned
介质柱6的尺寸与发光层4辐射的光波波长处于同一数量级。具体为50nm~900nm。为了使介质柱形成的材料结构具有良好的反射效果,介质柱6所形成的晶格相对发光层4辐射的频率需为二维光子带隙,使得所具能量处在二维光子带隙内的光子,不能从发光层4的侧面射出来,从而使光线经过侧面反射后有出光面7射出,大大提高了发光二极管器件的出光率,因此,利用光子晶体,可以制作反射性质非常好的界面,甚至是全角度全反射的界面。The size of the
介质柱6的形状及其所形成的晶格形状可以根据需要,选定为长方晶格、三角晶格、六角晶格或超晶格。The shape of the
为了解决半导体外延叠层龟裂、或与衬底1晶格不匹配的问题,半导体外延叠层与衬底1之间还设置有一缓冲层2,同时,为了解决半导体电流注入可以均匀地扩散到P型层5,P型层5与P型电极8之间还设有一层透明电极11。In order to solve the problem of cracks in the semiconductor epitaxial stack or lattice mismatch with the
衬底1由Si、蓝宝石或GaN基衬底材料形成,半导体外延叠层由铟镓铝氮(InxGayAl1-x-yN,0<=x<=1,0<=y<=1)材料形成。当然,除此之外,衬底1可以由砷化镓或磷化镓(GaP)基衬底材料形成,半导体外延叠层由铟镓铝磷(InxGayAl1-x-yP,0<=x<=1,0<=y<=1)或铝镓砷(AlxGa1-xAs,0<=x<=1)材料构成。透明电极可以采用镍金合金氧化物(Oxidzed-Ni/Au)、氧化铟锡(ITO)、氧化锌铝(AZO)、氧化锌,以及它们的组合物(如Ni/AZO,NiO/AZO,Ni/ZnO,NiO/Zn0等)。The
发光二极管芯片还可以采用圆形的发光区结构,并采用相应环状的N型电极和圆形的P型电极。The light-emitting diode chip can also adopt a circular light-emitting region structure, and adopt a corresponding ring-shaped N-type electrode and a circular P-type electrode.
另外,本发明还提供了一种侧面全反射的发光二极管器件的制造方法,其包括以下步骤:In addition, the present invention also provides a method for manufacturing a light-emitting diode device with total side reflection, which includes the following steps:
a、先把衬底1清洗干净,利用金属有机化学气相沉积方法,在衬底1上依次沉积缓冲层2及半导体外延叠层结构,该半导体外延叠层由下往上至少依次包括N型层3,单量子/多量子阱发光层4和P型层5。a. Clean the
b、半导体外延叠层沉积完成之后,通过干法刻蚀工艺,在半导体外延叠层上部分刻蚀P型层5,直到露出N型层3,形成N型电极区域。b. After the deposition of the semiconductor epitaxial stack is completed, the P-
c、在N型电极区域蒸镀形成N型电极9,在P型层5形成透明电极层11及P型电极8。c. An N-type electrode 9 is formed by vapor deposition in the N-type electrode region, and a
d、根据所须的晶格及其尺寸,利用电子束光刻及干法刻蚀的方法,在发光二极管芯片的边缘制作贯穿于半导体外延叠层的二维光子晶体结构,该光子晶体是由电介质常数呈周期性变化的介质柱6构成。d. According to the required crystal lattice and its size, use electron beam lithography and dry etching methods to make a two-dimensional photonic crystal structure that runs through the semiconductor epitaxial stack at the edge of the light-emitting diode chip. The photonic crystal is composed of It is composed of
在上述制作介质柱的步骤中,还可将光子晶体结构先制作成掩模板,再通过光刻及干法刻蚀工艺把掩模板花纹转到半导体外延叠层上。In the above step of making the dielectric pillar, the photonic crystal structure can also be made into a mask, and then the pattern of the mask can be transferred to the semiconductor epitaxial stack by photolithography and dry etching.
c、d两步工艺可以根据实际情况改变顺序。c, d two-step process can change the order according to the actual situation.
上述介质柱6刻蚀的深度在几微米,如3~6微米,从半导体外延叠层的最顶部一直垂直贯穿到衬底1上表面。The
实施例2Example 2
如图3所示,本实施例与实施例1相似,其区别在于:为了进一步提高侧面的全反射效果以及更容易制作封闭的周期介质柱,发光二极管芯片采用圆形的发光区结构,并采用相应环状的N型电极和圆形的P型电极。As shown in Figure 3, this embodiment is similar to
实施例3Example 3
如图4所示,本实施例与实施例1和实施例2相似,其区别在于:为了进一步提高侧面全反射的效果,介质柱6的刻蚀从P型层5深入贯穿到衬底1内部,或贯穿整个衬底1。As shown in Figure 4, this embodiment is similar to
此实施例包括了实施例1和实施例2中发光二极管芯片采用方型、圆形及其他任意图形的发光区结构。This embodiment includes the structure of the light-emitting area of the light-emitting diode chip in
实施例4Example 4
如图5所示,本实施例与实施例1和实施例2不同,其区别在于:衬底1为导电衬底,如Si、SiC、GaAs、GaP或金属等材料,外延叠层材料包括GaN基、GaAs基等材料。发光二极管的P、N电极制作成上下结构,分别形成上电极12及下电极10,并在发光二极管芯片的边缘制作贯穿于半导体外延叠层的二维光子晶体结构。此实施例包括了实施例1和实施例2采用的正面是正方型、圆形及其他任意图形的发光二极管器件结构。同样包括构成光子晶体结构的介质柱6部分深入到衬底1内部,或贯穿整个衬底1的情况。As shown in Figure 5, this embodiment is different from
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Cited By (3)
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CN102222743A (en) * | 2010-04-16 | 2011-10-19 | 亚威朗(美国) | Light-emitting devices with vertical light-extraction mechanism and method for fabricating the same |
CN102361053A (en) * | 2011-11-01 | 2012-02-22 | 东南大学 | Light-emitting diode with photonic crystal structure |
CN102456787A (en) * | 2010-10-20 | 2012-05-16 | 同方光电科技有限公司 | GaN-based light emitting diode |
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2008
- 2008-01-29 CN CNA2008100261171A patent/CN101226980A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102222743A (en) * | 2010-04-16 | 2011-10-19 | 亚威朗(美国) | Light-emitting devices with vertical light-extraction mechanism and method for fabricating the same |
CN102456787A (en) * | 2010-10-20 | 2012-05-16 | 同方光电科技有限公司 | GaN-based light emitting diode |
CN102361053A (en) * | 2011-11-01 | 2012-02-22 | 东南大学 | Light-emitting diode with photonic crystal structure |
CN102361053B (en) * | 2011-11-01 | 2013-05-01 | 东南大学 | Light-emitting diode with photonic crystal structure |
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