CN101226980A - LED device for inhibiting side direction emitting light using photon crystallographic structure - Google Patents
LED device for inhibiting side direction emitting light using photon crystallographic structure Download PDFInfo
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- CN101226980A CN101226980A CNA2008100261171A CN200810026117A CN101226980A CN 101226980 A CN101226980 A CN 101226980A CN A2008100261171 A CNA2008100261171 A CN A2008100261171A CN 200810026117 A CN200810026117 A CN 200810026117A CN 101226980 A CN101226980 A CN 101226980A
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- 230000002401 inhibitory effect Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000004038 photonic crystal Substances 0.000 claims abstract description 18
- 238000003475 lamination Methods 0.000 claims description 36
- 239000013078 crystal Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 18
- 238000007598 dipping method Methods 0.000 claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 5
- 238000000609 electron-beam lithography Methods 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 229910005540 GaP Inorganic materials 0.000 claims description 3
- URRHWTYOQNLUKY-UHFFFAOYSA-N [AlH3].[P] Chemical compound [AlH3].[P] URRHWTYOQNLUKY-UHFFFAOYSA-N 0.000 claims description 3
- -1 aluminium arsenic Chemical compound 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000002648 laminated material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- HCOLPNRPCMFHOH-UHFFFAOYSA-N Prodigiosin Natural products CCCCCC1C=C(C=C/2N=C(C=C2OC)c3ccc[nH]3)N=C1C HCOLPNRPCMFHOH-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- TWFGRJUTAULJPZ-USZBIXTISA-N prodigiosin Chemical compound N1=C(C)C(CCCCC)=C\C1=C/C1=NC(C=2[N]C=CC=2)=C[C]1OC TWFGRJUTAULJPZ-USZBIXTISA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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Abstract
The invention discloses a lighting diode device which inhibits the light to send from the side direction using a photonic crystal structure, which comprises a substrate and a semiconductor extension laminated layer which is cascaded on the substrate, wherein the semiconductor extension laminated layer comprises a N type layer, a luminous layer and a P type layer, the P type layer is equipped with a P type electrode, a part of the semiconductor extension laminated layer is etched into the N type layer, a part of uncased N type layer is equipped with the N type layer, the edge of a lighting diode clip is equipped with a two dimensional photonic crystal structure which passes through the semiconductor extension laminated layer, and the photonic crystal comprises a dielectric cylinder which is periodically changed through an electric medium constant. The invention is capable of inhibiting the lighting diode to send the light from the side direction, thereby effectively improving the extraction efficiency of the right surface. Further, the invention provides a method for preparing the lighting diode device which inhibits the light to send from the side direction using a photonic crystal structure.
Description
Technical field
The present invention relates to light emitting semiconductor device and manufacture method thereof, relate in particular to a kind of LED device and manufacture method thereof of utilizing photon crystal structure to suppress the side direction bright dipping.
Background technology
The III-V group iii v compound semiconductor material is at light-emitting diode, semiconductor laser, detector, and the electronic device aspect has a wide range of applications.Light-emitting diode chip for backlight unit is by at extension plate base growth N type layer, single quantum well/multiple quantum well luminescent layer, P type layer and obtaining, grown buffer layer and current extending etc. selectively in addition.Between the different layers and the electric medium constant between device and the external agency different, make light-emitting diode chip for backlight unit form change of refractive in direction perpendicular to layer structure.The light that sends from the chip light emitting layer, in shining the device process external, with the change of refractive between the experience layer structure, the light of a part can be reflected, particularly when optically denser medium entered optically thinner medium, total reflection can take place greater than the light of critical angle in the angle of emergence at the interface, and consequently some light is reflected, and, the bright dipping of chip front side is reduced through repeatedly going out from the side after the reflection.In order to collect the light that comes out from side direction, in the design of chip-packaging structure, adopt the reflector bowl and the methods such as high reflection layer of evaporation above the cup bowl, but for white light emitting diode, the side direction emergent light that the reflector bowl reflects can cause photochromic inhomogeneous, yellow circle phenomenon occurs.
For improving the efficient of positive bright dipping, adopt the close material of electric medium constant to reduce refringence between layer and the layer, alligatoring exiting surface surface or making two-dimensional photon crystal structure increase chip size to increase the means such as chance that light is gone out from the front to destroy the total reflection interface.Though above-mentioned method can improve positive bright dipping to a certain extent, according to the luminous mechanism of light-emitting diode, it is spontaneous radiation, and it is only isotropic that luminescent layer sends, and the side direction bright dipping is inevitable under the normal condition.
Photonic crystal is the periodically variable structure of a kind of electric medium constant, its main characteristics is to have complete photonic band gap, in the time of in photon energy is in complete photonic band gap, photon will be reflected, therefore, utilize photon crystal structure, can make the extraordinary interface of reflectivity, even the total reflection interface of full angle.At present, applied 2 D photon crystal in the light-emitting diode mainly is the air column or the medium post of fabrication cycle on exiting surface, to improve the efficient of surperficial bright dipping.Yet the photon band gap of this kind photon crystal structure is only to the photon generation effect of side direction outgoing, and the photon of surperficial outgoing is not played direct effect, in fact just is equivalent to the surface coarsening effect of rule.How directly utilizing the band gap effect of 2 D photon crystal in LED device, and don't increase the complexity of technology, is an important topic that improves the light-emitting diode light extraction efficiency.
Summary of the invention
The present invention proposes a kind of LED device of utilizing two-dimensional photon crystal structure to suppress the side direction bright dipping, this structure can improve the front light extraction efficiency effectively.In addition, the present invention also provides a kind of manufacture method of utilizing photon crystal structure to suppress the LED device of side direction bright dipping.
To achieve these goals, the present invention adopts following technical scheme:
A kind of LED device of utilizing photon crystal structure to suppress the side direction bright dipping, it comprises substrate and is laminated in semiconductor epitaxial layers on the substrate, this semiconductor epitaxial lamination comprises N type layer, luminescent layer and P type layer, P type layer is provided with P type electrode, the part semiconductor extension lamination is etched to N type layer, the part N type layer that exposes is provided with N type electrode, wherein, be provided with through the two-dimensional photon crystal structure of semiconductor epitaxial lamination at the edge of light-emitting diode chip for backlight unit, this photonic crystal is to be periodically variable medium post by electric medium constant to constitute.
Wherein, the medium of filling in the above-mentioned medium post can be dielectric substance or the air different with the refractive index of semiconductor epitaxial laminated material.
The optical wavelength of the size of medium post and the cycle of formed lattice thereof and luminescent layer radiation is in the same order of magnitude, is specially 50nm～900nm; Radiation frequency by the relative luminescent layer of the formed photonic crystal of medium post is the two-dimensional photon band gap; Lattice by the formed photonic crystal of medium post is rectangular lattice, triangular crystal lattice, hexagonal lattice or superlattice structure.
The medium post also runs through part or all of substrate.
The light-emitting zone of this light-emitting diode chip for backlight unit is circle or square structure, N type electrode in the form of a ring or sector structure, the rounded or square structure of P type electrode.
Substrate is sapphire, silicon, zinc oxide, aluminium nitride or gallium nitride material, and the semiconductor epitaxial lamination is by indium-gallium-aluminum-nitrogen (In
xGa
yAl
1-x-yN, 0＜=x＜=1,0＜=y＜=1) the material formation.
Substrate is GaAs or gallium phosphide material, and the semiconductor epitaxial lamination is by indium gallium aluminium phosphorus (In
xGa
yA
1-x-yP, 0＜=x＜=1,0＜=y＜=1) or gallium aluminium arsenic (Al
xGa
1-xAs, 0＜=x＜=1) the material formation.
Also be provided with a resilient coating between semiconductor epitaxial lamination and the substrate, also be provided with transparency electrode between P type layer and the P type electrode.
In addition, the present invention also provides a kind of manufacture method of utilizing photon crystal structure to suppress the LED device of side direction bright dipping, and its step comprises:
A, on substrate the deposited semiconductor extension lamination, this semiconductor epitaxial lamination comprises N type layer, luminescent layer and P type layer from lower to upper;
B, by dry etch process, the part semiconductor extension lamination is etched into N type layer;
C, on the N type layer that exposes evaporation N type electrode, evaporation transparency electrode and P type electrode on P type layer;
D, by the method for electron beam lithography and dry etching, etch through the two-dimensional photon crystal structure of semiconductor epitaxial lamination at the edge of light-emitting diode chip for backlight unit, this photonic crystal is to be periodically variable medium post by electric medium constant to constitute.
In steps d, make the photonic crystal mask plate earlier, by photoetching and dry etch process the mask plate decorative pattern is forwarded on the semiconductor epitaxial lamination again.
By the method for electron beam lithography and dry etching, the edge of light-emitting diode chip for backlight unit is continued to be etched to substrate interior or until the substrate bottom, forms the medium post that runs through part or all of substrate.
The present invention utilizes photon crystal structure to suppress the LED device and the manufacture method thereof of side direction bright dipping, around the luminous zone, make electric medium constant and be periodically variable medium post, formed a 2 D photon crystal band gap, make the bright dipping of luminescent layer side direction be reflected back toward device inside, through repeatedly reflect, absorb, process such as emission again, photon shoots out from the front of luminescent device the most at last, thereby has increased surperficial amount of light, has improved the light extraction efficiency of luminescent device.The technology of this LED device is made simple, uses the white light-emitting diodes of LED device encapsulation, can effectively reduce photochromic non-uniform phenomenons such as yellow circle.
The present invention can also be applied on utmost point light-emitting diode (OLED), the polymer LED luminescent devices such as (PLED).
Description of drawings:
Fig. 1 is the structure centre generalized section of the light emitting semiconductor device of the embodiment of the invention 1;
Fig. 2 is the structure front schematic view of the light emitting semiconductor device of the embodiment of the invention 1;
Fig. 3 is the structure front schematic view of the light emitting semiconductor device of the embodiment of the invention 2;
Fig. 4 is the structure centre generalized section of the light emitting semiconductor device of the embodiment of the invention 3.
Fig. 5 is the structure centre generalized section of the light emitting semiconductor device of the embodiment of the invention 4.
Among the above-mentioned figure, 1 is substrate, and 2 is resilient coating, and 3 is N type layer, and 4 is luminescent layer, and 5 is P type layer, and 6 is the medium post, and 7 is exiting surface, and 8 is P type electrode, and 9 is N type electrode, and 10 is bottom electrode, and 11 is transparency electrode, and 12 is top electrode
Embodiment
With reference to Fig. 1 and Fig. 2, a kind of LED device of utilizing photon crystal structure to suppress the side direction bright dipping, it comprises substrate 1 and is laminated in semiconductor epitaxial layers on the substrate 1, this semiconductor epitaxial lamination comprises N type layer 3, luminescent layer 4 and P type layer 5, P type layer 5 is provided with P type electrode 8, the part semiconductor extension lamination is etched to N type layer 3, the part N type layer 3 that exposes is provided with N type electrode 9, wherein, be provided with through the two-dimensional photon crystal structure of semiconductor epitaxial lamination at the edge of light-emitting diode chip for backlight unit, this photonic crystal is to be periodically variable medium post 6 by electric medium constant to constitute.
Wherein, the medium of filling in the above-mentioned medium post 6 can be the dielectric substance different with the refractive index of semiconductor epitaxial laminated material, certainly also air.And row's number of medium post 6 can be according to the reflectivity decision of technological operation and expection, and row's number is many more, and its reflecting effect is good more.
The optical wavelength of the size of medium post 6 and luminescent layer 4 radiation is in the same order of magnitude.Be specially 50nm～900nm.For the material structure that the medium post is formed has good reflecting effect, the frequency of relative luminescent layer 4 radiation of medium post 6 formed lattices is required to be the two-dimensional photon band gap, make institute's prodigiosin be in the photon in the two-dimensional photon band gap, can not shoot out from the side of luminescent layer 4, thereby light through being arranged after the offside reflection, exiting surface 7 is penetrated, improved the light emission rate of LED device greatly, therefore, utilize photonic crystal, can make the extraordinary interface of reflectivity properties, or even the interface of full angle total reflection.
The shape of medium post 6 and formed lattice shape thereof can be chosen to be rectangular lattice, triangular crystal lattice, hexagonal lattice or superlattice as required.
For solve semiconductor epitaxial lamination be full of cracks or with the unmatched problem of substrate 1 lattice, also be provided with a resilient coating 2 between semiconductor epitaxial lamination and the substrate 1, simultaneously, can be diffused into P type layer 5 equably in order to solve the injection of semi-conductor electricity stream, also be provided with layer of transparent electrode 11 between P type layer 5 and the P type electrode 8.
Light-emitting diode chip for backlight unit can also adopt circular luminous zone structure, and adopts the N type electrode and the circular P type electrode of corresponding ring-type.
In addition, the present invention also provides the manufacture method of the LED device of a kind of side total reflection, and it may further comprise the steps:
A, elder generation clean up substrate 1, utilize mocvd method, deposit resilient coating 2 and semiconductor epitaxial laminated construction on substrate 1 successively, this semiconductor epitaxial lamination comprises N type layer 3 from lower to upper at least successively, single quantum/multiple quantum well light emitting layer 4 and P type layer 5.
After b, semiconductor epitaxial stack deposition are finished,,,, form N type electrode zone up to exposing N type layer 3 at semiconductor epitaxial lamination top etching P type layer 5 by dry etch process.
C, form N type electrode 9, form transparent electrode layer 11 and P type electrodes 8 at P type layer 5 at N type electrode zone evaporation.
D, according to must lattice and size thereof, utilize the method for electron beam lithography and dry etching, at the two-dimensional photon crystal structure of the edge of light-emitting diode chip for backlight unit making through the semiconductor epitaxial lamination, this photonic crystal is to be periodically variable medium post 6 by electric medium constant to constitute.
In the step of above-mentioned making medium post, also photon crystal structure can be made into mask plate earlier, by photoetching and dry etch process the mask plate decorative pattern is forwarded on the semiconductor epitaxial lamination again.
C, d two step process can be according to actual conditions change orders.
The degree of depth of above-mentioned medium post 6 etchings is at several microns, as 3～6 microns, vertically extends through substrate 1 upper surface from the top of semiconductor epitaxial lamination always.
As shown in Figure 3, present embodiment is similar to embodiment 1, its difference is: for the further total reflection effect of side and the periodical media post of easier making sealing of improving, light-emitting diode chip for backlight unit adopts circular luminous zone structure, and adopts the N type electrode and the circular P type electrode of corresponding ring-type.
As shown in Figure 4, present embodiment is similar with embodiment 2 to embodiment 1, and its difference is: in order further to improve the effect of side total reflection, the etching of medium post 6 deeply extends through substrate 1 inside from P type layer 5, or runs through entire substrate 1.
This embodiment has comprised the luminous zone structure of light-emitting diode chip for backlight unit employing square, circle and other arbitrary graphics among embodiment 1 and the embodiment 2.
As shown in Figure 5, present embodiment is different with embodiment 2 with embodiment 1, and its difference is: substrate 1 is conductive substrates, and as materials such as Si, SiC, GaAs, GaP or metals, the extension lamination material comprises materials such as GaN base, GaAs base.The P of light-emitting diode, N electrode are made into up-down structure, form top electrode 12 and bottom electrode 10 respectively, and make the two-dimensional photon crystal structure through the semiconductor epitaxial lamination at the edge of light-emitting diode chip for backlight unit.This embodiment has comprised that the front that embodiment 1 and embodiment 2 adopt is the luminous diode device structure of positive square, circle and other arbitrary graphics.Comprise that equally medium post 6 parts that constitute photon crystal structure are deep into substrate 1 inside, or run through the situation of entire substrate 1.
Claims (10)
1. LED device of utilizing photon crystal structure to suppress the side direction bright dipping, it comprises substrate (1) and is laminated in semiconductor epitaxial layers on the substrate (1), this semiconductor epitaxial lamination comprises N type layer (3), luminescent layer (4) and P type layer (5), P type layer (5) is provided with P type electrode (8), the part semiconductor extension lamination is etched to N type layer (3), the part N type layer (3) that exposes is provided with N type electrode (9), it is characterized in that: be provided with through the two-dimensional photon crystal structure of semiconductor epitaxial lamination at the edge of light-emitting diode chip for backlight unit, this photonic crystal is to be periodically variable medium post (6) by electric medium constant to constitute.
2. LED device as claimed in claim 1 is characterized in that: the optical wavelength of the size of medium post (6) and the cycle of formed lattice thereof and luminescent layer (4) radiation is in the same order of magnitude, is 50nm～900nm; Radiation frequency by the relative luminescent layer of the formed photonic crystal of medium post (6) (4) is the two-dimensional photon band gap; Lattice by the formed photonic crystal of medium post (6) is rectangular lattice, triangular crystal lattice, hexagonal lattice or superlattice structure.
3. LED device as claimed in claim 1 is characterized in that: medium post (6) also runs through part or all of substrate (1).
4. LED device as claimed in claim 1 is characterized in that: the light-emitting zone of this light-emitting diode chip for backlight unit is circle or square structure, N type electrode (9) in the form of a ring or sector structure, the rounded or square structure of P type electrode (8).
5. as each described LED device of claim 1 to 4, it is characterized in that: substrate (1) is sapphire, silicon, zinc oxide, aluminium nitride or gallium nitride material, and the semiconductor epitaxial lamination is by indium-gallium-aluminum-nitrogen (In
xGa
yAl
1-x-yN, 0＜=x＜=1,0＜=y＜=1) the material formation.
6. as each described LED device of claim 1 to 4, it is characterized in that: substrate (1) is GaAs or gallium phosphide material, and the semiconductor epitaxial lamination is by indium gallium aluminium phosphorus (In
xGa
yAl
1-x-yP, 0＜=x＜=1,0＜=y＜=1) or gallium aluminium arsenic (Al
xGa
1-xAs, 0＜=x＜=1) the material formation.
7. as each described LED device of claim 1 to 4, it is characterized in that: also be provided with a resilient coating (2) between semiconductor epitaxial lamination and the substrate (1), also be provided with transparency electrode between P type layer (5) and the P type electrode (8).
8. manufacture method of utilizing photon crystal structure to suppress the LED device of side direction bright dipping, its step comprises:
A, go up the deposited semiconductor extension lamination at substrate (1), this semiconductor epitaxial lamination comprises N type layer (3), luminescent layer (4) and P type layer (5) from lower to upper;
B, by dry etch process, the part semiconductor extension lamination is etched into N type layer;
C, on the N type layer that exposes evaporation N type electrode (9), go up evaporation transparency electrode (7) and P type electrode (8) at P type layer (5);
D, by the method for electron beam lithography and dry etching, etch through the two-dimensional photon crystal structure of semiconductor epitaxial lamination at the edge of light-emitting diode chip for backlight unit, this photonic crystal is to be periodically variable medium post (6) by electric medium constant to constitute.
9. LED device as claimed in claim 8 is characterized in that: in steps d, make the photonic crystal mask plate earlier, by photoetching and dry etch process the mask plate decorative pattern is forwarded on the semiconductor epitaxial lamination.
10. LED device as claimed in claim 8 or 9, it is characterized in that: by the method for electron beam lithography and dry etching, the edge of light-emitting diode chip for backlight unit is continued to be etched to substrate interior or until the substrate bottom, forms the medium post (6) that runs through part or all of substrate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100261171A CN101226980A (en) | 2008-01-29 | 2008-01-29 | LED device for inhibiting side direction emitting light using photon crystallographic structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100261171A CN101226980A (en) | 2008-01-29 | 2008-01-29 | LED device for inhibiting side direction emitting light using photon crystallographic structure |
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| Publication Number | Publication Date |
|---|---|
| CN101226980A true CN101226980A (en) | 2008-07-23 |
Family
ID=39858840
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|---|---|---|---|
| CNA2008100261171A Pending CN101226980A (en) | 2008-01-29 | 2008-01-29 | LED device for inhibiting side direction emitting light using photon crystallographic structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222743A (en) * | 2010-04-16 | 2011-10-19 | 亚威朗(美国) | Light-emitting devices with vertical light-extraction mechanism and method for fabricating the same |
| CN102361053A (en) * | 2011-11-01 | 2012-02-22 | 东南大学 | Light-emitting diode with photonic crystal structure |
| CN102456787A (en) * | 2010-10-20 | 2012-05-16 | 同方光电科技有限公司 | GaN-based light emitting diode |
-
2008
- 2008-01-29 CN CNA2008100261171A patent/CN101226980A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222743A (en) * | 2010-04-16 | 2011-10-19 | 亚威朗(美国) | Light-emitting devices with vertical light-extraction mechanism and method for fabricating the same |
| CN102456787A (en) * | 2010-10-20 | 2012-05-16 | 同方光电科技有限公司 | GaN-based light emitting diode |
| CN102361053A (en) * | 2011-11-01 | 2012-02-22 | 东南大学 | Light-emitting diode with photonic crystal structure |
| CN102361053B (en) * | 2011-11-01 | 2013-05-01 | 东南大学 | Light-emitting diode with photonic crystal structure |
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