KR20100044403A - Nitride semiconductor light emitting device and method of manufacturing the same - Google Patents
Nitride semiconductor light emitting device and method of manufacturing the same Download PDFInfo
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- KR20100044403A KR20100044403A KR1020080103525A KR20080103525A KR20100044403A KR 20100044403 A KR20100044403 A KR 20100044403A KR 1020080103525 A KR1020080103525 A KR 1020080103525A KR 20080103525 A KR20080103525 A KR 20080103525A KR 20100044403 A KR20100044403 A KR 20100044403A
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- nitride semiconductor
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- emitting device
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Abstract
Description
The present invention relates to a nitride semiconductor light emitting device and a method of manufacturing the same, and more particularly, to a nitride semiconductor light emitting device having a pattern formed on the side surface of the substrate.
Recently, III-V nitride semiconductors such as GaN have been spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their excellent physical and chemical properties. have. LEDs or LDs using III-V nitride semiconductor materials are widely used in light emitting devices for obtaining light in the blue or green wavelength band, and these light emitting devices are applied as light sources of various products such as home appliances, electronic displays, and lighting devices. Here, the group III-V nitride semiconductor is usually made of a GaN-based material having a composition formula of In X Al Y Ga 1-XY N (0≤X, 0≤Y, X + Y≤1).
In general, the light efficiency of a nitride semiconductor light emitting device is determined by an internal quantum efficiedncy and an external light extraction efficiency (also called "external quantum efficiency"). In particular, the external light extraction efficiency is determined by optical factors of the light emitting device, that is, the refractive index of each structure and / or the flatness of the interface.
In view of the light extraction efficiency, the nitride semiconductor light emitting device has a fundamental limitation. That is, since the semiconductor layer constituting the semiconductor light emitting device has a larger refractive index than the external atmosphere or the substrate, the critical angle that determines the range of incident angles of light emission becomes small, and as a result, a large part of the light generated from the active layer is totally internally reflected. It is propagated in a substantially undesired direction or lost in the total reflection process, the light extraction efficiency is low.
In order to improve the problem of the external light extraction efficiency of the light emitting device, conventionally patterning the upper surface of the sapphire substrate or non-mirror surface of the top layer (eg p-type nitride semiconductor layer) of the semiconductor to improve the light extraction efficiency There was a back.
However, in the art, new methods for maximizing the effect of improving the external light extraction efficiency of nitride semiconductor light emitting devices are continuously required.
Accordingly, the present invention has been made to solve the above problems, an object of the present invention, by forming a pattern on the side of the substrate to maximize the light extraction efficiency of the light generated inside the device to improve the light emission characteristics of the product The present invention provides a nitride semiconductor light emitting device and a method of manufacturing the same.
According to an embodiment of the present invention, a nitride semiconductor light emitting device includes: a substrate having a pattern formed on a side surface thereof; An n-type nitride semiconductor layer formed on the substrate; An active layer formed on a portion of the n-type nitride semiconductor layer; A p-type nitride semiconductor layer formed on the active layer; A p-type electrode formed on the p-type nitride semiconductor layer; And an n-type electrode formed on the n-type nitride semiconductor layer.
Here, the pattern may be formed by an etching method or a laser irradiation method.
The patterns may be arranged in parallel in the horizontal or vertical direction.
In addition, the pattern may be of a regular or irregular structure.
In addition, the pattern may be formed on some or all side surfaces of the substrate.
In addition, the substrate may have a polygonal or circular planar shape.
In addition, a pattern may be formed on an upper surface of the substrate.
In addition, a pattern may be formed on an upper surface of the p-type nitride semiconductor layer.
In addition, the method of manufacturing a nitride semiconductor light emitting device according to an embodiment of the present invention for achieving the above object comprises the steps of: preparing a substrate; Forming a trench having a pattern formed on a side surface of the substrate to separate an upper portion of the substrate into an element size; Sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the substrate separated by the trench; And completely separating the substrate into device units by a scribing process.
Here, the trench having a pattern formed on the side surface may be formed by an etching method or a laser irradiation method.
The method may further include mesa etching the p-type nitride semiconductor layer and a part of the active layer to expose a portion of the n-type nitride semiconductor layer before the substrate is completely separated by the scribing process. And forming a p-type electrode and an n-type electrode on the p-type nitride semiconductor layer and the exposed n-type nitride semiconductor layer, respectively.
The method may further include forming a pattern on an upper surface of the substrate after forming a trench having a pattern formed on a side thereof to separate an upper portion of the substrate into an element size.
The method may further include forming a pattern on an upper surface of the p-type nitride semiconductor layer after the forming of the p-type nitride semiconductor layer.
In addition, another method of manufacturing a nitride semiconductor light emitting device according to an embodiment of the present invention for achieving the above object, preparing a substrate; Forming a trench having a pattern formed on a side surface of the substrate to separate an upper portion of the substrate into an element size; Forming a sacrificial layer in the trench; Sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the substrate separated by the trench; Removing the sacrificial layer; The scribing process may include the step of completely separating the substrate in device units.
Here, the sacrificial layer may be made of a silicon oxide film.
As described above, according to the nitride semiconductor light emitting device and the manufacturing method thereof according to the present invention, by forming a pattern that can improve the light extraction efficiency on the side surface of the substrate occupying most of the area of the device side, The light generated at and directed toward the side of the substrate may not be emitted to the side as it strikes the pattern, but its path may be changed to be emitted to the top of the device.
Therefore, the present invention has the effect of maximizing the external light extraction efficiency of the nitride semiconductor light emitting device to improve the light emitting characteristics.
The matters relating to the operational effects including the technical constitution for the above object of the nitride semiconductor light emitting device and the manufacturing method according to the present invention will be clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.
Structure of nitride semiconductor light emitting device
A nitride semiconductor light emitting device according to an embodiment of the present invention will be described in detail with reference to FIG. 1.
1 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device according to an embodiment of the present invention.
As shown in FIG. 1, a nitride semiconductor light emitting device according to an embodiment of the present invention includes a buffer layer (not shown), an n-type
The
The buffer layer is a layer for improving lattice matching with the
The n-type
In addition, the
A portion of the p-type
The p-
In addition, before the p-
In particular, in the nitride semiconductor light emitting device according to the embodiment of the present invention, a
The
In addition, the
At this time, in the embodiment of the present invention, the structure of the pattern (110a) is shown to be formed in a prism shape, the structure of the pattern (110a) is not limited to the prism shape, but within the technical scope of the present invention, for example For example, it may be modified in various ways, including hemispherical shape.
In addition, the
In addition, the
Here, in the finally fabricated nitride semiconductor light emitting device, it is common that the thickness of the
Therefore, according to the exemplary embodiment of the present invention, light generated in the
In addition, in the embodiment of the present invention, the p-type nitride semiconductor layer constituting the upper surface of the
Method of manufacturing nitride semiconductor light emitting device
A method of manufacturing a nitride semiconductor light emitting device according to an embodiment of the present invention will be described in detail with reference to FIGS. 2 to 8.
2 to 8 are cross-sectional views sequentially showing the method of manufacturing the nitride semiconductor light emitting device according to the embodiment of the present invention.
First, as shown in FIG. 2, a
Next, as shown in FIG. 3, a
The
As the
In addition, the
In addition, the depth of the
Although not shown in the drawings, the
Next, as shown in FIG. 4, a
Thereafter, as shown in FIG. 5, a buffer layer (not shown), an n-type
In addition, after the p-type
Next, as shown in FIG. 6, the
Then, as shown in FIG. 7, a portion of the p-type
Next, as shown in FIG. 8, a scribing process of completely separating the
Preferred embodiments of the present invention described above are disclosed for the purpose of illustration, and various substitutions, modifications, and changes within the scope without departing from the spirit of the present invention for those skilled in the art to which the present invention pertains. It will be possible, but such substitutions, changes and the like should be regarded as belonging to the following claims.
1 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device according to an embodiment of the present invention.
2 to 8 are cross-sectional views sequentially showing the method for manufacturing the nitride semiconductor light emitting device according to the embodiment of the present invention.
<Description of Symbols for Main Parts of Drawings>
100: substrate 110: trench
110a: Pattern 120: n-type nitride semiconductor layer
130: active layer 140: p-type nitride semiconductor layer
150: p-type electrode 160: n-type electrode
Claims (15)
Priority Applications (1)
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KR1020080103525A KR20100044403A (en) | 2008-10-22 | 2008-10-22 | Nitride semiconductor light emitting device and method of manufacturing the same |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012165739A1 (en) * | 2011-06-01 | 2012-12-06 | Seoul Opto Device Co., Ltd. | Semiconductor light-emitting device, method of fabricating the same, and package comprising the same |
KR20160019679A (en) * | 2014-08-12 | 2016-02-22 | 엘지이노텍 주식회사 | Light emitting device and lighting system |
KR20170064775A (en) * | 2015-12-02 | 2017-06-12 | 삼성전자주식회사 | Light emitting device and display device including the same |
WO2020044980A1 (en) * | 2018-08-27 | 2020-03-05 | ソニーセミコンダクタソリューションズ株式会社 | Light emitting element and method for producing light emitting element |
-
2008
- 2008-10-22 KR KR1020080103525A patent/KR20100044403A/en not_active Application Discontinuation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012165739A1 (en) * | 2011-06-01 | 2012-12-06 | Seoul Opto Device Co., Ltd. | Semiconductor light-emitting device, method of fabricating the same, and package comprising the same |
KR20160019679A (en) * | 2014-08-12 | 2016-02-22 | 엘지이노텍 주식회사 | Light emitting device and lighting system |
KR20170064775A (en) * | 2015-12-02 | 2017-06-12 | 삼성전자주식회사 | Light emitting device and display device including the same |
WO2020044980A1 (en) * | 2018-08-27 | 2020-03-05 | ソニーセミコンダクタソリューションズ株式会社 | Light emitting element and method for producing light emitting element |
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