KR20100044403A - Nitride semiconductor light emitting device and method of manufacturing the same - Google Patents

Nitride semiconductor light emitting device and method of manufacturing the same Download PDF

Info

Publication number
KR20100044403A
KR20100044403A KR1020080103525A KR20080103525A KR20100044403A KR 20100044403 A KR20100044403 A KR 20100044403A KR 1020080103525 A KR1020080103525 A KR 1020080103525A KR 20080103525 A KR20080103525 A KR 20080103525A KR 20100044403 A KR20100044403 A KR 20100044403A
Authority
KR
South Korea
Prior art keywords
nitride semiconductor
substrate
light emitting
emitting device
semiconductor layer
Prior art date
Application number
KR1020080103525A
Other languages
Korean (ko)
Inventor
강중서
심현욱
Original Assignee
삼성엘이디 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성엘이디 주식회사 filed Critical 삼성엘이디 주식회사
Priority to KR1020080103525A priority Critical patent/KR20100044403A/en
Publication of KR20100044403A publication Critical patent/KR20100044403A/en

Links

Images

Abstract

PURPOSE: A nitride semiconductor light emitting device and a method of manufacturing the same are provided to maximize light extraction efficiency of light emitted from inside a device by forming a pattern on the side of a substrate. CONSTITUTION: A substrate comprises a pattern on the side. An n-type nitride semiconductor layer(120) is formed on the substrate(100). An active layer(130) is formed on a part of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer(140) is formed on the active layer. A P-contact(150) is formed on the p-type nitride semiconductor layer. The N type electrode(160) is formed on the n-type nitride semiconductor layer.

Description

Nitride semiconductor light emitting device and method of manufacturing the same

The present invention relates to a nitride semiconductor light emitting device and a method of manufacturing the same, and more particularly, to a nitride semiconductor light emitting device having a pattern formed on the side surface of the substrate.

Recently, III-V nitride semiconductors such as GaN have been spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their excellent physical and chemical properties. have. LEDs or LDs using III-V nitride semiconductor materials are widely used in light emitting devices for obtaining light in the blue or green wavelength band, and these light emitting devices are applied as light sources of various products such as home appliances, electronic displays, and lighting devices. Here, the group III-V nitride semiconductor is usually made of a GaN-based material having a composition formula of In X Al Y Ga 1-XY N (0≤X, 0≤Y, X + Y≤1).

In general, the light efficiency of a nitride semiconductor light emitting device is determined by an internal quantum efficiedncy and an external light extraction efficiency (also called "external quantum efficiency"). In particular, the external light extraction efficiency is determined by optical factors of the light emitting device, that is, the refractive index of each structure and / or the flatness of the interface.

In view of the light extraction efficiency, the nitride semiconductor light emitting device has a fundamental limitation. That is, since the semiconductor layer constituting the semiconductor light emitting device has a larger refractive index than the external atmosphere or the substrate, the critical angle that determines the range of incident angles of light emission becomes small, and as a result, a large part of the light generated from the active layer is totally internally reflected. It is propagated in a substantially undesired direction or lost in the total reflection process, the light extraction efficiency is low.

In order to improve the problem of the external light extraction efficiency of the light emitting device, conventionally patterning the upper surface of the sapphire substrate or non-mirror surface of the top layer (eg p-type nitride semiconductor layer) of the semiconductor to improve the light extraction efficiency There was a back.

However, in the art, new methods for maximizing the effect of improving the external light extraction efficiency of nitride semiconductor light emitting devices are continuously required.

Accordingly, the present invention has been made to solve the above problems, an object of the present invention, by forming a pattern on the side of the substrate to maximize the light extraction efficiency of the light generated inside the device to improve the light emission characteristics of the product The present invention provides a nitride semiconductor light emitting device and a method of manufacturing the same.

According to an embodiment of the present invention, a nitride semiconductor light emitting device includes: a substrate having a pattern formed on a side surface thereof; An n-type nitride semiconductor layer formed on the substrate; An active layer formed on a portion of the n-type nitride semiconductor layer; A p-type nitride semiconductor layer formed on the active layer; A p-type electrode formed on the p-type nitride semiconductor layer; And an n-type electrode formed on the n-type nitride semiconductor layer.

Here, the pattern may be formed by an etching method or a laser irradiation method.

The patterns may be arranged in parallel in the horizontal or vertical direction.

In addition, the pattern may be of a regular or irregular structure.

In addition, the pattern may be formed on some or all side surfaces of the substrate.

In addition, the substrate may have a polygonal or circular planar shape.

In addition, a pattern may be formed on an upper surface of the substrate.

In addition, a pattern may be formed on an upper surface of the p-type nitride semiconductor layer.

In addition, the method of manufacturing a nitride semiconductor light emitting device according to an embodiment of the present invention for achieving the above object comprises the steps of: preparing a substrate; Forming a trench having a pattern formed on a side surface of the substrate to separate an upper portion of the substrate into an element size; Sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the substrate separated by the trench; And completely separating the substrate into device units by a scribing process.

Here, the trench having a pattern formed on the side surface may be formed by an etching method or a laser irradiation method.

The method may further include mesa etching the p-type nitride semiconductor layer and a part of the active layer to expose a portion of the n-type nitride semiconductor layer before the substrate is completely separated by the scribing process. And forming a p-type electrode and an n-type electrode on the p-type nitride semiconductor layer and the exposed n-type nitride semiconductor layer, respectively.

The method may further include forming a pattern on an upper surface of the substrate after forming a trench having a pattern formed on a side thereof to separate an upper portion of the substrate into an element size.

The method may further include forming a pattern on an upper surface of the p-type nitride semiconductor layer after the forming of the p-type nitride semiconductor layer.

In addition, another method of manufacturing a nitride semiconductor light emitting device according to an embodiment of the present invention for achieving the above object, preparing a substrate; Forming a trench having a pattern formed on a side surface of the substrate to separate an upper portion of the substrate into an element size; Forming a sacrificial layer in the trench; Sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the substrate separated by the trench; Removing the sacrificial layer; The scribing process may include the step of completely separating the substrate in device units.

Here, the sacrificial layer may be made of a silicon oxide film.

As described above, according to the nitride semiconductor light emitting device and the manufacturing method thereof according to the present invention, by forming a pattern that can improve the light extraction efficiency on the side surface of the substrate occupying most of the area of the device side, The light generated at and directed toward the side of the substrate may not be emitted to the side as it strikes the pattern, but its path may be changed to be emitted to the top of the device.

Therefore, the present invention has the effect of maximizing the external light extraction efficiency of the nitride semiconductor light emitting device to improve the light emitting characteristics.

The matters relating to the operational effects including the technical constitution for the above object of the nitride semiconductor light emitting device and the manufacturing method according to the present invention will be clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.

Structure of nitride semiconductor light emitting device

A nitride semiconductor light emitting device according to an embodiment of the present invention will be described in detail with reference to FIG. 1.

1 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device according to an embodiment of the present invention.

As shown in FIG. 1, a nitride semiconductor light emitting device according to an embodiment of the present invention includes a buffer layer (not shown), an n-type nitride semiconductor layer 120, an active layer 130, and a p-type nitride on a substrate 100. The semiconductor layers 140 are sequentially stacked.

The substrate 100 is preferably made of a transparent material such as sapphire, and in addition to sapphire, zinc oxide (ZnO), gallium nitride (GaN), silicon carbide (SiC) or aluminum nitride (AlN) or the like.

The buffer layer is a layer for improving lattice matching with the substrate 100 before growing the n-type nitride semiconductor layer 120 on the substrate 100, and may be formed of GaN or the like, which is a process condition and a device. It can be omitted depending on the characteristics.

The n-type nitride semiconductor layer 120, the active layer 130, and the p-type nitride semiconductor layer 140 may have an In X Al Y Ga 1-XY N composition formula (where 0 ≦ X, 0 ≦ Y, and X + Y ≦ It can be made of a semiconductor material having 1). More specifically, the n-type nitride semiconductor layer 120 may be formed of a GaN layer or a GaN / AlGaN layer doped with n-type conductive impurities, for example, Si, Ge, Sn is used, and preferably Si is mainly used. In addition, the p-type nitride semiconductor layer 140 may be formed of a GaN layer or a GaN / AlGaN layer doped with a p-type conductivity, such as, for example, Mg, Zn, Be, etc. Is used, and preferably Mg is mainly used.

In addition, the active layer 130 may be formed of an InGaN / GaN layer having a multi-quantum well structure.

A portion of the p-type nitride semiconductor layer 140 and the active layer 130 are removed by mesa etching to expose a portion of the n-type nitride semiconductor layer 120.

The p-type electrode 150 is formed on the p-type nitride semiconductor layer 140 not removed by the mesa etching. An n-type electrode 160 is formed on the n-type nitride semiconductor layer 120 exposed by the mesa etching, that is, the n-type nitride semiconductor layer 120 on which the active layer 130 is not formed. The p-type electrode and the n-type electrode 150.160 may be formed of Au, Cr / Au, or the like so as to simultaneously perform a reflection role and an electrode role.

In addition, before the p-type electrode 150 is formed on the top surface of the p-type nitride semiconductor layer 140, a transparent electrode (not shown) may be formed to form an ohmic contact while increasing the current injection area. . The transparent electrode is mainly made of indium tin oxide (ITO).

In particular, in the nitride semiconductor light emitting device according to the embodiment of the present invention, a pattern 110a having a predetermined shape is formed on the side surface of the substrate 100 to improve the external light extraction efficiency of the light emitting device.

The pattern 110a may be formed by a dry etching method or a wet etching method, or may be formed by a laser irradiation method or the like.

In addition, the pattern 110a is a concave-convex structure for improving external light extraction efficiency, and may have a regular or irregular concave-convex structure.

At this time, in the embodiment of the present invention, the structure of the pattern (110a) is shown to be formed in a prism shape, the structure of the pattern (110a) is not limited to the prism shape, but within the technical scope of the present invention, for example For example, it may be modified in various ways, including hemispherical shape.

In addition, the pattern 110a may be arranged in parallel in the horizontal direction as shown in the drawing, or may be arranged in parallel in the vertical direction.

In addition, the pattern 110a may be formed on some or all of the side surfaces of the substrate 100. For example, the substrate 100 may have a polygonal shape, such as a triangle or a square, or a circular planar shape. When the substrate 100 has a triangular planar shape, the substrate 100 may be divided into three shapes. Since the pattern 110a may be formed on a side surface, the pattern 110a may be formed on only one surface of the three sides of the substrate 100, or may be formed on one or more surfaces.

Here, in the finally fabricated nitride semiconductor light emitting device, it is common that the thickness of the substrate 100 occupies 90% or more of the total thickness of the light emitting device. In the exemplary embodiment of the present invention in which the pattern 110a is formed on the side surface of the substrate 100, an area in which the pattern 110a is formed is compared with the case in which the pattern is formed on the upper surface of the substrate 100 or the top layer surface of the light emitting device. There is an advantage that can greatly increase.

Therefore, according to the exemplary embodiment of the present invention, light generated in the active layer 130 and directed toward the side surface of the substrate 100 is formed on the side surface of the substrate 100 that occupies most of the area of the side surface of the device. While hitting 110a), it is not emitted to the side as it is, the path can be changed to be emitted to the top of the light emitting device, there is an effect that can significantly improve the light extraction efficiency of the device to improve the light emitting characteristics.

In addition, in the embodiment of the present invention, the p-type nitride semiconductor layer constituting the upper surface of the substrate 100 or the uppermost layer of the light emitting device as well as forming the pattern 110a on the side of the substrate 100 as described above. By further forming a pattern (not shown) on the upper surface of 140, the light extraction efficiency of the light emitting device can be further improved.

Method of manufacturing nitride semiconductor light emitting device

A method of manufacturing a nitride semiconductor light emitting device according to an embodiment of the present invention will be described in detail with reference to FIGS. 2 to 8.

2 to 8 are cross-sectional views sequentially showing the method of manufacturing the nitride semiconductor light emitting device according to the embodiment of the present invention.

First, as shown in FIG. 2, a substrate 100 for growing a nitride semiconductor material is prepared. The substrate 100 is preferably made of sapphire, and may be made of ZnO, GaN, SiC or AlN in addition to sapphire.

Next, as shown in FIG. 3, a trench 110 having a pattern 110a formed on a side surface of the substrate 100 is formed to separate an upper portion of the substrate 100 into an element size. That is, when the trench 110 is formed, the pattern 110a is formed on the side surface of the substrate 100 that is separated into element sizes.

The trench 110 may be formed by an etching method, a laser irradiation method, or the like so that the pattern 110a is formed on the side surface as described above. Examples of the etching method include dry etching such as sputtering or wet etching using a wet liquid. In this case, the pattern 110a formed on the side surface of the trench 110, that is, the side surface of the substrate 100, is for increasing the external light extraction efficiency of the device, and is regularly or irregularly by adjusting the etching conditions. It may be formed into a concave-convex structure.

As the pattern 110a, the prism-shaped pattern 110a as shown in the figure may be formed to be arranged in parallel in the horizontal direction, or may be formed to be arranged in parallel in the vertical direction. In this case, the shape of the pattern 110a may be variously modified including a hemispherical shape in addition to the one prism shape.

In addition, the pattern 110a may be formed on some or all side surfaces of the substrate 100 separated by the device size. For example, as the trench 110 is formed, the substrate 100 separated into element sizes may have a polygonal shape such as a triangle or a square, or a planar shape such as a circle. The substrate 100 may have a triangular planar shape. In this case, since the substrate 100 may be formed of three side surfaces, the pattern 110a may be formed on only one surface of the three sides of the substrate 100 or may be formed on one or more surfaces. .

In addition, the depth of the trench 110 in which the pattern 110a is formed is preferably formed to have several nanometers to several hundred micrometers in consideration of substrate thicknesses of various types of light emitting devices.

Although not shown in the drawings, the pattern 110a may be formed on the side surface of the substrate 100, and then a pattern (not shown) may be additionally formed on the upper surface of the substrate 100 to improve light extraction efficiency. have.

Next, as shown in FIG. 4, a sacrificial layer 200 is formed in the trench 110 between the substrates 100 separated into the device sizes. The sacrificial layer 200 is for preventing abnormal growth on the side surface of the substrate 100 during the subsequent growth of the nitride semiconductor layer. The sacrificial layer 200 is preferably made of a wet etching material such as a silicon oxide film. Formation of the sacrificial layer 200 may be omitted.

Thereafter, as shown in FIG. 5, a buffer layer (not shown), an n-type nitride semiconductor layer 120, an active layer 130, and a p-type are formed on the substrate 100 on which the sacrificial layer 200 is not formed. The nitride semiconductor layer 140 is sequentially formed. Here, the formation of the buffer layer may be omitted.

In addition, after the p-type nitride semiconductor layer 140 is formed, a pattern (not shown) may be further formed on the upper surface of the p-type nitride semiconductor layer 140 to improve light extraction efficiency.

Next, as shown in FIG. 6, the sacrificial layer 200 is removed. The sacrificial layer 200 may be selectively removed through wet etching using hydrofluoric acid (HF).

Then, as shown in FIG. 7, a portion of the p-type nitride semiconductor layer 140 and the active layer 130 are mesa-etched to expose a portion of the n-type nitride semiconductor layer 120. Then, the p-type electrode 150 is formed on the p-type nitride semiconductor layer 140 which is not etched by the mesa etching process, and the n-type nitride semiconductor layer 120 is exposed by the mesa etching process. The type electrode 160 is formed.

Next, as shown in FIG. 8, a scribing process of completely separating the substrate 100 by device units is performed. Accordingly, the nitride semiconductor light emitting device having the pattern 110a formed on the side surface of the substrate 100, which occupies most of the entire area of the light emitting device, can be provided. Therefore, according to the embodiment of the present invention, there is an effect that can greatly increase the external light extraction efficiency of the light emitting device.

Preferred embodiments of the present invention described above are disclosed for the purpose of illustration, and various substitutions, modifications, and changes within the scope without departing from the spirit of the present invention for those skilled in the art to which the present invention pertains. It will be possible, but such substitutions, changes and the like should be regarded as belonging to the following claims.

1 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device according to an embodiment of the present invention.

2 to 8 are cross-sectional views sequentially showing the method for manufacturing the nitride semiconductor light emitting device according to the embodiment of the present invention.

<Description of Symbols for Main Parts of Drawings>

100: substrate 110: trench

110a: Pattern 120: n-type nitride semiconductor layer

130: active layer 140: p-type nitride semiconductor layer

150: p-type electrode 160: n-type electrode

Claims (15)

A substrate having a pattern formed on a side surface thereof; An n-type nitride semiconductor layer formed on the substrate; An active layer formed on a portion of the n-type nitride semiconductor layer; A p-type nitride semiconductor layer formed on the active layer; A p-type electrode formed on the p-type nitride semiconductor layer; And An n-type electrode formed on the n-type nitride semiconductor layer; Nitride semiconductor light emitting device comprising a. The method of claim 1, The pattern is a nitride semiconductor light emitting device formed by an etching method or a laser irradiation method. The method of claim 1, The pattern is nitride semiconductor light emitting device arranged in parallel in the horizontal or vertical direction. The method of claim 1, The pattern is a nitride semiconductor light emitting device consisting of a regular or irregular irregular structure. The method of claim 1, The pattern is nitride semiconductor light emitting device formed on the side or part of the entire surface of the substrate. The method of claim 1, The substrate is a nitride semiconductor light emitting device having a polygonal or circular planar shape. The method of claim 1, A nitride semiconductor light emitting device in which a pattern is formed on an upper surface of the substrate. The method of claim 1, A nitride semiconductor light emitting device in which a pattern is formed on an upper surface of the p-type nitride semiconductor layer. Preparing a substrate; Forming a trench having a pattern formed on a side surface of the substrate to separate an upper portion of the substrate into an element size; Sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the substrate separated by the trench; And Completely separating the substrate by a scribing process in unit units; Method of manufacturing a nitride semiconductor light emitting device comprising a. 10. The method of claim 9, The trench having a pattern formed on the side surface is formed by an etching method or a laser irradiation method. 10. The method of claim 9, Before the step of completely separating the substrate by device in the scribing process, Mesa-etching a portion of the p-type nitride semiconductor layer and the active layer to expose a portion of the n-type nitride semiconductor layer; And Forming a p-type electrode and an n-type electrode on the p-type nitride semiconductor layer and the exposed n-type nitride semiconductor layer, respectively; Method of manufacturing a nitride semiconductor light emitting device further comprising. 10. The method of claim 9, After the step of forming a patterned trench on the side of the substrate to separate the upper portion of the substrate into element sizes, Forming a pattern on the upper surface of the substrate; Method of manufacturing a nitride semiconductor light emitting device further comprising. 10. The method of claim 9, After forming the p-type nitride semiconductor layer, Forming a pattern on the upper surface of the p-type nitride semiconductor layer; manufacturing method of a nitride semiconductor light emitting device further comprising. Preparing a substrate; Forming a trench having a pattern formed on a side surface of the substrate to separate an upper portion of the substrate into an element size; Forming a sacrificial layer in the trench; Sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the substrate separated by the trench; Removing the sacrificial layer; Completely separating the substrate by a scribing process in unit units; Method of manufacturing a nitride semiconductor light emitting device comprising a. The method of claim 14, The sacrificial layer is a silicon semiconductor film manufacturing method of the nitride semiconductor light emitting device.
KR1020080103525A 2008-10-22 2008-10-22 Nitride semiconductor light emitting device and method of manufacturing the same KR20100044403A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020080103525A KR20100044403A (en) 2008-10-22 2008-10-22 Nitride semiconductor light emitting device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080103525A KR20100044403A (en) 2008-10-22 2008-10-22 Nitride semiconductor light emitting device and method of manufacturing the same

Publications (1)

Publication Number Publication Date
KR20100044403A true KR20100044403A (en) 2010-04-30

Family

ID=42219103

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080103525A KR20100044403A (en) 2008-10-22 2008-10-22 Nitride semiconductor light emitting device and method of manufacturing the same

Country Status (1)

Country Link
KR (1) KR20100044403A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012165739A1 (en) * 2011-06-01 2012-12-06 Seoul Opto Device Co., Ltd. Semiconductor light-emitting device, method of fabricating the same, and package comprising the same
KR20160019679A (en) * 2014-08-12 2016-02-22 엘지이노텍 주식회사 Light emitting device and lighting system
KR20170064775A (en) * 2015-12-02 2017-06-12 삼성전자주식회사 Light emitting device and display device including the same
WO2020044980A1 (en) * 2018-08-27 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 Light emitting element and method for producing light emitting element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012165739A1 (en) * 2011-06-01 2012-12-06 Seoul Opto Device Co., Ltd. Semiconductor light-emitting device, method of fabricating the same, and package comprising the same
KR20160019679A (en) * 2014-08-12 2016-02-22 엘지이노텍 주식회사 Light emitting device and lighting system
KR20170064775A (en) * 2015-12-02 2017-06-12 삼성전자주식회사 Light emitting device and display device including the same
WO2020044980A1 (en) * 2018-08-27 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 Light emitting element and method for producing light emitting element

Similar Documents

Publication Publication Date Title
KR100624449B1 (en) Semiconductor emitting device with approved and manufacturing method for the same
KR101103882B1 (en) Semiconductor light emitting device and fabrication method thereof
KR101125395B1 (en) Light emitting device and fabrication method thereof
US20060267027A1 (en) Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency
KR20100050430A (en) Light emitting device with fine pattern
CN102244172A (en) Semiconductor light emitting device and method for fabricating the same
US9728670B2 (en) Light-emitting diode and manufacturing method therefor
EP2219237A2 (en) Semiconductor light emitting device and method of manufacturing the same
US20100187558A1 (en) Semiconductor light emitting device and method of fabricating the same
CN102468384B (en) Etching growth layers of light emitting devices to reduce leakage current
KR100735488B1 (en) Method for forming the gan type led device
KR20120059200A (en) Light emitting diode and method for fabricating the same
KR20160028980A (en) Vertical ultraviolet light emitting device and method thereof
KR20100044403A (en) Nitride semiconductor light emitting device and method of manufacturing the same
KR100794121B1 (en) Light emitting diode
KR20100049274A (en) Nitride semiconductor light emitting device and method of manufacturing the same
KR101518858B1 (en) Semiconductor light emitting device and manufacturing method of the same
CN110838538B (en) Light-emitting diode element and preparation method thereof
KR100650996B1 (en) A nitride semiconductor light emitting diode comprising a surface portion having a fine protrusion formed thereon and a method of manufacturing the same
KR100691123B1 (en) Method for fabricating light emitting diode of vertical electrode type
KR101360882B1 (en) Nitride semiconductor device and method of manufacturing the same
CN113795931B (en) Light emitting diode and manufacturing method thereof
KR101646360B1 (en) Light emitting device and method of fabricating the same
TWI786276B (en) Manufacturing method of light-emitting device
KR102260691B1 (en) Light-emitting diodes and method of manufacturing the same

Legal Events

Date Code Title Description
N231 Notification of change of applicant
N231 Notification of change of applicant
WITN Withdrawal due to no request for examination