KR100650996B1 - A nitride semiconductor light emitting diode comprising a surface portion having a fine protrusion formed thereon and a method of manufacturing the same - Google Patents

Abstract

The present invention relates to a nitride-based light emitting diode (GaN-based semiconductor light emitting diode), in detail by forming a fine protrusion on the upper surface of the nitride semiconductor layer in contact with the outside without forming an ohmic electrode, the nitride semiconductor layer The present invention relates to a nitride semiconductor light emitting diode which increases light extraction efficiency by changing an incident angle of light exiting from the outside to the outside.

In forming fine protrusions on the upper surface of the nitride semiconductor layer in which the ohmic electrode was not formed, fine protrusions obtained by etching the polycrystalline oxide film were used as an etching pattern, whereby minute protrusions could be uniformly formed on the surface portion. Therefore, the reliability of the device is improved due to improved light extraction efficiency and stable performance, and thus there is an advantage in mass production in carrying out the present invention.

Nitride Semiconductor Light Emitting Diode, Surface Etching, Light Extraction Efficiency, Polycrystalline Oxide                  

Description

GaN-based semiconductor Light Emitting Diode using the Surface Part formatted the Nano Pattern and manufacturing of the same}

FIG. 1 exemplarily illustrates an exit angle of light for explaining light extraction efficiency improvement of a nitride semiconductor light emitting diode having a fine pattern formed on a surface of the nitride semiconductor layer.

FIG. 2 is a surface photograph of a nitride semiconductor light emitting diode obtained by etching the surface of the nitride semiconductor layer using a dry etching by-product of the related art as an etching pattern.

Figure 3 shows the manufacturing method of the present invention sequentially.

4 exemplarily shows a plan view and a cross-sectional view of the present invention.

5 is a surface photograph of the polycrystalline oxide film after etching the polycrystalline oxide film.

6 is a photograph of a surface portion included in the nitride semiconductor light emitting diode of the present invention.

7 is a photograph showing the state of light emission when a forward current flows through the nitride semiconductor light emitting diode of the present invention.

8 is a graph showing the optical properties of the present invention.

9 is a graph showing the electrical properties of the present invention.

The present invention relates to a nitride-based light emitting diode (GaN-based semiconductor light emitting diode), in detail by forming a fine protrusion on the upper surface of the nitride semiconductor layer in contact with the outside without forming an ohmic electrode, the nitride semiconductor layer The present invention relates to a nitride semiconductor light emitting diode which increases light extraction efficiency by changing an incident angle of light exiting from the outside to the outside.

A nitride light emitting diode is a kind of light emitting diode in which a current is converted into light when a forward current of a predetermined magnitude is applied to generate light. A light emitting diode is a light emitting diode that emits blue and ultraviolet light following a light emitting diode emitting red or green color using a pin-junction structure of compound semiconductors such as indium phosphorus (InP), gallium arsenide (GaAs), and gallium phosphorus (GaP). Has been widely used in display devices, light source devices, and environmental application devices. Recently, color conversion light emitting diodes that emit white light using three chips of red, green, and blue or phosphors have been developed. The range of application is also widening.

The light emitted from the conventional nitride semiconductor light emitting diode is mostly emitted to the outside through the light-transmitting p-type ohmic electrode of the light generated from the nitride semiconductor layer. The amount of light emitted to the air from the upper surface of the nitride semiconductor layer is extremely small. This is because the refractive index of the nitride semiconductor is 2.5, which is larger than the refractive index of air, so that the critical angle of the light exiting from the nitride semiconductor layer to the outside becomes small, so that the amount of light trapped in the nitride semiconductor layer due to total reflection is large.

FIG. 1 (a) illustrates an incident angle of light emitted from the nitride semiconductor layer to the outside, and FIG. 1 (b) illustrates photon emitted from the nitride semiconductor layer having a pattern. An incident angle is shown as an example. In the structure as shown in Fig. 1 (a), since the critical angle between the nitride semiconductor layer and the air is small as described above, total reflection occurs and is often trapped in the semiconductor layer, and thus the light extraction efficiency of the nitride semiconductor layer is weak. 5-10%, very low. As described above, since light is hardly emitted from the nitride semiconductor layer to the air in the conventional nitride semiconductor light emitting diode, the light transmittance of the p-type ohmic electrode formed on the p-type nitride semiconductor layer has a light emission characteristic of the nitride semiconductor light emitting diode. Left and right.

However, if the incident angle between the nitride semiconductor layer and the air is changed, the light trapped in the nitride semiconductor layer will be reduced, and thus the light extraction efficiency of the nitride semiconductor light emitting diode can be expected to be improved. As shown in FIG. 1B, the pattern on the upper surface of the nitride semiconductor layer on which the ohmic electrode is not formed is a method for increasing the light extraction efficiency on the upper surface of the nitride semiconductor layer on which the ohmic electrode is not formed. Can be formed. If a pattern is formed on the upper surface of the nitride semiconductor layer on which the ohmic electrode is not formed, the probability that the incident angle between the nitride semiconductor and the air can be changed by the pattern increases, thereby reducing the number of total reflections and the light of the nitride semiconductor. You can reduce the amount of loss trapped inside.

Conventional techniques for nitride semiconductor light emitting diodes in which a pattern is formed on the upper surface of a nitride semiconductor layer in which an ohmic electrode is not formed, as shown in FIG. 1 (b), are described in Korean Patent No. 10-0452749, III-nitride having a high density fine surface lattice. Semiconductor light emitting device '. In the conventional art, in order to form an n-type ohmic electrode on an n-type nitride semiconductor layer, an ohmic electrode is not formed using an etching residue that may occur during etching to expose the n-type nitride semiconductor layer as a mask pattern. A method of forming a surface grating on the surface of the nitride semiconductor layer, that is, the outer peripheral portion of the chip, which is in contact with the outside without contemplation is proposed.

The conventional technology causes a lot of etching debris to occur during the dry etching, so that the etching debris is used as a mask pattern of the nitride semiconductor layer. However, the etching debris has a disadvantage that it is difficult to form densely on the nitride semiconductor layer of the outer portion of the chip. After etching the outer portion of the chip using the etching debris of Figure 2 as a mask pattern, it is a photograph of the outer portion of the chip. As shown in FIG. 2, the distance between the gratings formed on the outer portion of the chip is about ± 1 μm, and the gratings are not densely formed. Therefore, it was difficult to achieve the purpose of increasing the light emitted from the nitride semiconductor layer to the air by changing the incident angle between the air and the nitride semiconductor through the surface grating. In addition, since the degree of etch debris is not constant in every process, the reliability of the device is inferior.

The present invention is to solve the problems of the prior art as described above, the ohmic electrode is not formed in order to increase the light emitted into the air from the upper surface of the nitride semiconductor layer in contact with the outside without forming the ohmic electrode. An object of the present invention is to propose a nitride semiconductor light emitting diode having fine protrusions formed on an upper surface of a nitride semiconductor layer.

In addition, the present invention is because the fine projection formed on the upper surface of the nitride semiconductor layer is not formed ohmic electrode in order to change the incident angle of the light uniformly with respect to the light emitted from the nitride semiconductor layer to the air, dense fine projection And a nitride semiconductor light emitting diode including an upper surface of a nitride semiconductor layer formed uniformly.

In addition, the present invention uses a fine roughness formed by etching the surface of the polycrystalline oxide film on the nitride semiconductor layer in order to form fine protrusions on the nitride semiconductor layer in contact with the outside without forming the ohmic electrode as an etching pattern Another object of the present invention is to propose a method of manufacturing a nitride semiconductor light emitting diode which etches a nitride semiconductor layer in contact with the outside without forming the ohmic electrode.

The present invention is to achieve the above object, by uniformly forming a fine projection on the upper surface of the nitride semiconductor layer in contact with the outside without forming an ohmic electrode, the amount of light emitted from the nitride semiconductor layer to the outside The present invention relates to a nitride semiconductor light emitting diode having increased light extraction efficiency.

The present invention provides a. Growing a plurality of nitride semiconductor layers on the base substrate; b. Forming a polycrystalline oxide film on an upper surface of the nitride semiconductor layer; c. Etching to form fine irregularities in the polycrystalline oxide film formed on the surface portion of the polycrystalline oxide film formed on the nitride semiconductor layer, on which the ohmic electrode is not formed; d. Dry etching the nitride semiconductor layer including the surface portion using fine irregularities formed in the polycrystalline oxide layer as an etching pattern; And e. Forming an ohmic electrode on the nitride semiconductor layer; We propose a method of manufacturing a nitride semiconductor light emitting diode comprising a. The nitride semiconductor layer preferably includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer. In addition, the polycrystalline oxide film is ITO (Indium Tin Oxide), SnO ₃ (Tin Oxide), In ₂ O ₃ (Indium Oxide), ZnO (Zinc Oxide), AZO (Al-doped Zinc Oxide), TiO ₂ (Titanium Oxide), Ta ₂ O ₅ (Tantalum Oxide), ZrO ₂ (Zirconium Oxide), HfO ₂ (Hafnium Oxide), Al ₂ O ₃ (Aluminum Oxide) is preferred.

In addition, the etching of the polycrystalline oxide film in step c is preferably performed until irregular irregularities having a lower cross-sectional radius larger than the upper cross-sectional radius is formed, and the etching of the polycrystalline oxide film is preferably performed by wet etching.

In addition, the dry etching of the nitride semiconductor layer in step d is preferably performed to form fine protrusions on the surface portion. The dry etching of the nitride semiconductor layer may further include an etching for exposing the surface portion and the n-type nitride semiconductor layer.

The ohmic electrode may be a p-type ohmic electrode formed on a p-type nitride semiconductor layer and an n-type ohmic electrode formed on the n-type nitride semiconductor layer after exposing the n-type nitride semiconductor layer by etching. It is preferable to include.

In addition, the present invention provides a nitride semiconductor light emitting diode comprising a base substrate, a buffer layer, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and an ohmic electrode formed on the p-type and n-type nitride semiconductor layers. ,

The surface portion of the upper surface of the nitride semiconductor layer in which the ohmic electrode is not formed includes a nitride semiconductor light emitting diode comprising fine protrusions obtained by performing dry etching using an etch pattern of fine irregularities formed by etching a polycrystalline oxide film. Suggest. In addition, a nitride semiconductor light emitting diode manufactured by the method of manufacturing the nitride semiconductor light emitting diode is proposed.

Hereinafter, preferred embodiments of the present invention will be described based on the drawings.

A method of manufacturing a nitride semiconductor light emitting diode having a fine pattern proposed in the present invention is as shown in FIGS. 3A to 3E.

In order to manufacture a nitride semiconductor light emitting diode, as shown in FIG. 3A, nitride semiconductor layers 11, 12, 13, and 14 are grown on the base substrate 10. The nitride semiconductor layers 11, 12, 13, and 14 grow an In _x (Ga _y Al _1-y ) N nitride semiconductor layer using metal organic chemical vapor deposition (MOCVD). The composition ratio of the nitride semiconductor is 1 ≧ x ≧ 0, 1 ≧ y ≧ 0, and x + y> 0. The nitride-based semiconductor layer may include metal organic chemical vapor deposition, liquid phase epitaxy, hydrogen vapor phase epitaxy, molecular beam epitaxy, It is also possible to grow with metal organic vapor phase epitaxy (MOVPE). The growing nitride semiconductor layer may be grown in a single layer or in multiple layers depending on the type of device to be manufactured and impurities may be added to any one or a plurality of elements of Si, Mg, and Zn groups to have a conductive property. Si is added to make the n-type nitride semiconductor layer 12. Doping concentration depends on the type of device to be manufactured and can be doped about 10 ¹⁵ / cm 3 to 10 ²¹ / cm 3. Therefore, depending on the doping concentration, the nitride semiconductor is divided into a high resistor or a conductive material, and in the case of a high resistor, the specific resistance is preferably 100Ωcm or more and 0.1Ωcm or less in the case of conductivity.

The nitride semiconductor layer includes In _x (Ga _y Al _1-y ) including a buffer layer 11, an n-type nitride semiconductor layer 12, an active layer 13, and a p-type nitride semiconductor layer 14 on the base substrate 10. ) N nitride semiconductor layer, and each layer can be formed of AlGaN, INGaN, AlGaInN or the like. In particular, an active layer _{(13) In x (Ga y} Al 1-y) N in the barrier layer and the _{In x (Ga y Al 1-} y) may have a single quantum well structure or a multiple quantum well structure comprising a well layer of N In addition, by adjusting the composition ratio of In, Ga, and Al, it is possible to freely fabricate from the long wavelength having the InN (˜1.8 eV) band gap to the short wavelength light emitting diode having the AlN (˜6.4 eV) band gap.

Thereafter, as shown in FIG. 3B, the polycrystalline oxide film 20 is formed on the upper surface 14 of the nitride semiconductor layer. The polycrystalline oxide film 20 is preferably formed entirely on the upper surface 14 of the nitride semiconductor layer. The polycrystalline oxide film may be formed of indium tin oxide (ITO), tin oxide (SnO ₃ ), indium oxide (In ₂ O ₃ ), zinc oxide (ZnO), al-doped zinc oxide (AZO), titanium oxide (TiO ₂ ), ta It is preferably one of ₂ O ₅ (Tantalum Oxide), ZrO ₂ (Zirconium Oxide), HfO ₂ (Hafnium Oxide), and Al ₂ O ₃ (Aluminum Oxide).

The polycrystalline oxide film 20 has a polycrystalline property that is a collection of grain boundaries. The grain boundary refers to a form in which a plurality of grains are arranged on the basis of a unit called grains to form a bond. When the grain boundary is etched, the grain boundary is etched along the bond of the grain boundary, so that the etching progresses in the direction of disengaging the grain boundary, the grain boundary is separated as the etching progresses, and the surface of the grain boundary is also removed. This gradually becomes sharper. Therefore, the polycrystalline oxide film 20 can control the shape of the grain boundary through etching, thereby making it possible to easily generate fine irregularities.

Thereafter, as shown in FIG. 3C, the polycrystalline oxide film 20 formed on the surface portion, that is, the upper surface of the nitride semiconductor layer on which the ohmic electrode is not formed, is etched to form fine irregularities in the polycrystalline oxide film 20.

The fine concavo-convex formed on the surface of the polycrystalline oxide film 20 preferably has a lower cross section radius than the upper cross section radius. As described above, the polycrystalline oxide film is a combination of grain boundaries, and when the polycrystalline oxide film is etched, the bonds of the grain boundaries constituting the polycrystalline oxide film are broken along the etching direction from the side which is in contact with the etching. Therefore, when the mushroom-shaped grain boundary is etched from the vertex of the top of the apex, and the portion that is seen as the mushroom part is exposed and etched, as described above, the shape of the grain boundary is the shape of the cone or the truncated cone. Similarly formed.

In this manner, without using a specific etching pattern on the upper surface of the polycrystalline oxide film, fine irregularities are formed by etching using the characteristics of the polycrystalline oxide film. In addition, when etching the polycrystalline oxide film, since weak bonding of grain boundaries is broken, it is preferable that minute irregularities formed on the upper surface of the polycrystalline oxide film are irregularly generated.

In addition, the etching of the polycrystalline oxide film is preferably performed by wet etching in order to form more finely and finely the fine irregularities formed in the polycrystalline oxide film, and to form the above-described shape.

FIG. 5 is a surface photograph of ITO after etching indium tin oxide (ITO), which is one of the polycrystalline oxide films 20, to form fine unevenness. As shown in Fig. 5, on the surface of the ITO having the fine concavo-convex formed on the upper surface, fine concavo-convex was formed densely and finely, and each shape was generated close to the conical shape. It is apparent that the shape of the fine concavo-convex formed on the surface of ITO shown in FIG. 5 is a feature that is shown not only in ITO but also in the above-described polycrystalline material.

3D, the surface portion is dry-etched using the fine concavo-convex 20 formed on the upper surface of the polycrystalline oxide film as an etching pattern in order to change the incident angle of light exiting from the surface portion to the outside.

The reason why the surface portion is etched by dry etching is to form fine and dense irregularities to be formed on the nitride semiconductor layer. When the wet etching is performed, due to the isotropic nature of the wet etching, it is possible to etch the nitride semiconductor, which does not have to be etched, and has a disadvantage in that a gap between the unevenness is widened and it is difficult to form a dense pattern. Therefore, as in the present invention, it is preferable to use dry etching to form a fine and dense pattern.

During dry etching for forming fine protrusions on the surface portion, it is preferable to perform etching on the upper surface of the nitride semiconductor layer which does not form the surface portion, that is, the ohmic electrode. On the other hand, after forming the fine projections on the surface portion, in order to perform the process of forming the n-type ohmic electrode 17, the nitride semiconductor layer (14, 13) for exposing the n-type nitride semiconductor layer 12 Perform etching. To simplify the process, the etching of the nitride semiconductor layer for exposing the n-type nitride semiconductor layer 12 may be performed together with the surface portion.

FIG. 6 is a surface photograph of a nitride semiconductor layer subjected to dry etching using fine unevenness formed in the polycrystalline oxide film as an etching pattern. As shown in Figure 6, it can be confirmed that the projections of the surface portion is formed fine and dense.

After the surface portion is etched as described above, as shown in FIG. 3E, the p-type ohmic electrode 15 is disposed on the p-type nitride semiconductor layer 14, and the p-type ohmic electrode 15 is formed on the p-type ohmic electrode 15. The type electrode pad 16 is formed. In addition, the n-type nitride semiconductor layer 12 is exposed to form an n-type ohmic electrode 17 on the n-type nitride semiconductor layer 12.

As described above, in order to form a surface grating on the upper surface of the nitride semiconductor that does not form the ohmic electrode, an etching by-product is used as an etching pattern. However, in the present invention, in manufacturing a nitride semiconductor light emitting diode including a surface portion on which fine protrusions are formed, in order to form the fine protrusions on the surface portion, fine irregularities are formed on the polycrystalline oxide film to use the fine irregularities of the polycrystalline oxide film as an etching pattern. It was.

Table 1 shows the differences between the two prior arts and the manufacturing method of the present invention.

Etching pattern Efficiency of the method Luminous intensity increase rate with or without surface protrusion (%) Etch Byproducts 1. Difficult to control uneven shape 2. Unevenly formed densely 3. Easy to process 20-25 Nano Masks of Polycrystalline Oxides 1.Easy to control uneven shape 2.Densely formed unevenness 3.Easy to use 32-40

As shown in Table 1, when the etching by-products are used as an etching pattern, the frequency of occurrence of the etching by-products cannot be predicted, cannot be specified in advance, and is not formed densely, so that the shape of the irregularities is difficult to control and the irregularities are not dense. I couldn't. Therefore, the increase rate of the brightness of the nitride semiconductor light emitting diode manufactured by the method of using the etching by-product as the etching pattern was low at 20-25%.

Compared to the prior art, since the present invention uses the fine concavo-convex of the polycrystalline oxide film, which is easy to control, such as the shape size and height of the etching pattern, as the etching pattern on the surface part, the method is easy and the advantage of the concave-convex shape There is this. In addition, since the unevenness of the polycrystalline oxide film is formed finely and densely by using the property of being polycrystalline and wet etching of the polycrystalline oxide film, when the fine unevenness of the polycrystalline oxide film is used as an etching pattern, fine protrusions of the fine and dense surface portion are formed. Can be formed. Accordingly, as a result of experiments, the increase rate of light intensity of the nitride semiconductor light emitting diode according to the present invention showed a high value as 32 to 40%.

4 is a plan view and a cross-sectional view of a nitride semiconductor light emitting diode including a surface portion having irregularities formed thereon and manufactured of the nitride semiconductor light emitting diode.

As shown in FIG. 4B, the nitride semiconductor light emitting diode includes a buffer layer 11, an n-type nitride semiconductor layer 12, an active layer 13, and a p-type nitride semiconductor layer on the base substrate 10. A p-type ohmic electrode 15 having a light transmissivity is disposed on the p-type nitride semiconductor layer 14, and an upper surface of the p-type ohmic electrode 15 is disposed on the p-type nitride semiconductor layer 14. A portion of the p-type electrode pad 16 is located. In addition, an n-type ohmic electrode 17 is formed on the exposed n-type nitride semiconductor layer 12.

Light generated in the nitride semiconductor layer is mainly emitted to the outside through the light-transmitting p-type ohmic electrode 15. Since the nitride semiconductor has a refractive index of 2.5, which is considerably larger than that of air having a refractive index of 1, the critical angle of the light exiting from the nitride semiconductor to the air is small, so that a total amount of light is trapped in the nitride semiconductor and cannot be emitted to the outside. . However, as shown in FIG. 1 (b), when the fine protrusion is formed on the upper surface 12 of the nitride semiconductor to change the incident angle of light exiting from the nitride semiconductor into the air, the amount of light emitted outside the critical angle may increase. You can expect that.

Thus, in the present invention, as shown in Figure 4, by forming a fine protrusion on the upper surface 12 of the nitride semiconductor layer is not formed ohmic electrode to increase the amount of light emitted from the upper surface of the nitride semiconductor layer A semiconductor light emitting diode is proposed.

The nitride semiconductor light emitting diode includes a surface portion. The surface portion is positioned on the upper surface of the nitride semiconductor layer and is a portion where no ohmic electrode is formed. As shown in FIG. 4A, the surface portion may be an n-type nitride semiconductor layer 12. However, it does not mean only the n-type nitride semiconductor layer, but as described above, it means a portion where the p-type or n-type ohmic electrode is not formed on the upper surface of the nitride semiconductor layer.

In the nitride semiconductor light emitting diode including the surface portion having the minute protrusions, the amount of light emitted to the outside through the surface portion is increased than the amount of light emitted to the outside from the upper surface of the nitride semiconductor layer in the conventional nitride semiconductor light emitting diode. do. FIG. 7 (a) is a photograph showing the emission of light when a forward current is applied to a conventional nitride semiconductor light emitting diode including a surface portion without forming a fine protrusion, and FIG. 7 (b) is a micrograph proposed by the present invention. When a forward current is applied to the nitride semiconductor light emitting diode including the surface portion where the protrusion is formed, it is a photograph showing a state of light emission from the nitride semiconductor light emitting diode.

As shown in FIG. 7 (a), it can be seen that the conventional nitride semiconductor light emitting diode emits light only at the p-type ohmic electrode at the forward current.

However, as shown in FIG. 7 (b), it can be seen that the nitride semiconductor light emitting diode including the surface portion on which the fine protrusions are formed has light emitted from the p-type ohmic electrode and the surface portion at a forward current. It is also confirmed that the light intensity emitted from the p-type ohmic electrode and the surface portion is similar. Therefore, unlike the conventional light emitting surface of the nitride semiconductor light emitting diode, the nitride semiconductor light emitting diode of the present invention is different from the surface of the nitride semiconductor light emitting diode to form a fine projection to increase the amount of light emitted from the surface.

8 is a graph comparing optical characteristics of a conventional nitride semiconductor light emitting diode including a surface portion without forming a fine protrusion and a nitride semiconductor light emitting diode having a fine protrusion. As shown in FIG. 8, the nitride semiconductor light emitting diode having the fine protrusions may have higher optical characteristics than the conventional nitride semiconductor light emitting diode, and the larger the current, the larger the difference.

9 is a graph comparing the electrical characteristics of a conventional nitride semiconductor light emitting diode and a nitride semiconductor light emitting diode having fine protrusions. As shown in FIG. 9, the electrical characteristics of the nitride semiconductor light emitting diode having the pattern formed on the surface thereof were not significantly different from those of the conventional nitride semiconductor light emitting diode. Therefore, a nitride semiconductor light emitting diode having improved light extraction efficiency can be manufactured without reducing electrical characteristics.

In the nitride semiconductor light emitting diode, the critical angle of the light exiting from the nitride semiconductor to the air is small, so as to reduce the amount of light lost due to total reflection of the light from the upper surface of the nitride semiconductor layer where the ohmic electrode is not formed. Fine protrusions were formed on the surface of the nitride semiconductor layer on which the ohmic electrode was not formed to change the incident angle of the light exiting from the nitride semiconductor layer into the air, thereby improving light extraction efficiency of the nitride semiconductor light emitting diode.

In addition, in forming the fine protrusions on the surface portion, by using the fine concavo-convex obtained by etching the polycrystalline oxide film as an etching pattern, fine protrusions could be uniformly formed on the surface portion. Therefore, the reliability of the device is improved due to improved light extraction efficiency and stable performance.

The present invention has an advantage of improving light extraction efficiency of a nitride semiconductor light emitting diode by forming fine protrusions on a surface portion of a nitride semiconductor layer which does not form an ohmic electrode so that light is emitted to the outside.

In addition, according to the present invention, in the etching process for forming protrusions on the surface portion, a polycrystalline oxide film is formed on the nitride semiconductor layer, and then the polycrystalline oxide film formed on the surface portion is etched to produce fine fines on the surface of the polycrystalline oxide film. There is an advantage in that the irregularities are formed, and the protrusions on the surface portion are uniformly formed by using the fine irregularities in the etching pattern. The protrusion of the surface portion is formed uniformly, there is an advantage that the reliability of the light emitting diode is stabilized. In addition, since uniform protrusions can be formed on the surface portion, there is an advantage in mass production.

Claims (10)

a. Growing a plurality of nitride semiconductor layers on the base substrate; b. Forming a polycrystalline oxide film on an upper surface of the nitride semiconductor layer; c. Etching to form fine irregularities in the polycrystalline oxide film formed on the surface portion of the polycrystalline oxide film formed on the nitride semiconductor layer, on which the ohmic electrode is not formed; d. Dry etching the nitride semiconductor layer including the surface portion using fine irregularities formed in the polycrystalline oxide layer as an etching pattern; And e. Forming an ohmic electrode on the nitride semiconductor layer; Method of manufacturing a nitride semiconductor light emitting diode comprising a. The method of claim 1, The nitride semiconductor layer is a method of manufacturing a nitride semiconductor light emitting diode comprising an n- type nitride semiconductor layer, an active layer, a p- type nitride semiconductor layer. The method of claim 1, Polycrystalline oxide films include ITO (Indium Tin Oxide), SnO ₃ (Tin Oxide), In ₂ O ₃ (Indium Oxide), ZnO (Zinc Oxide), AZO (Al-doped Zinc Oxide), TiO ₂ (Titanium Oxide), Ta ₂ Method of manufacturing a nitride semiconductor light emitting diode, characterized in that any one of O ₅ (Tantalum Oxide), ZrO ₂ (Zirconium Oxide), HfO ₂ (Hafnium Oxide), Al ₂ O ₃ (Aluminum Oxide). The method of claim 1, The etching of the polycrystalline oxide film in step c is carried out until the irregular irregularities having a lower cross-sectional radius larger than the upper cross-sectional radius is formed irregularly. The method of claim 1, The etching of the polycrystalline oxide film is a method of manufacturing a nitride semiconductor light emitting diode, characterized in that performed by wet etching. The method of claim 1, Dry etching of the nitride semiconductor layer in the step d is performed to form a fine protrusion on the surface portion manufacturing method of a nitride semiconductor light emitting diode. The method of claim 6, The dry etching of the nitride semiconductor layer further comprises etching to expose the surface portion and the n-type nitride semiconductor layer. The method of claim 1, The ohmic electrode includes a p-type ohmic electrode formed on the p-type nitride semiconductor layer and an n-type ohmic electrode formed on the n-type nitride semiconductor layer after the etching to expose the n-type nitride semiconductor layer. A method of manufacturing a nitride semiconductor light emitting diode, characterized in that. A nitride semiconductor light emitting diode comprising a base substrate, a buffer layer, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer, and an ohmic electrode formed on the p-type and n-type nitride semiconductor layers, And a surface portion of the upper surface of the nitride semiconductor layer, on which the ohmic electrode is not formed, includes fine protrusions obtained by performing dry etching using the fine unevenness formed by etching the polycrystalline oxide film as an etching pattern. The method according to any one of claims 1 to 10, A nitride semiconductor light emitting diode manufactured by the method of manufacturing the nitride semiconductor light emitting diode.

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