KR20160019679A - Light emitting device and lighting system - Google Patents

Abstract

An embodiment relates to a light emitting device, a manufacturing method of the light emitting device, a light emitting device package, and a lighting system. According to an embodiment, the light emitting device can comprise: a substrate; a first nitride semiconductor layer arranged on the substrate; an amorphous layer arranged on the substrate; a first conductive semiconductor layer on the first nitride semiconductor layer; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The embodiment provides a high quality nitride semiconductor layer.

Description

[0001] LIGHT EMITTING DEVICE AND LIGHTING SYSTEM [0002]

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

A light emitting device can be produced by combining p-n junction diodes having the characteristic that electric energy is converted into light energy by elements of Group III and Group V on the periodic table. LEDs can be implemented in various colors by controlling the composition ratio of compound semiconductors.

When a forward voltage is applied to a light emitting device, the electrons in the n-layer and the holes in the p-layer are coupled to emit energy corresponding to the energy gap between the conduction band and the valance band. It emits mainly in the form of heat or light, and emits in the form of light.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, and the like using nitride semiconductors have been commercialized and widely used.

1 is a cross-sectional photograph of a nitride semiconductor layer formed on a substrate according to a conventional technique. Specifically, FIG. 1 is an image obtained by forming the nitride semiconductor thin film layer E on the Si substrate S by CVD and observing the side surface of the substrate.

According to the conventional method of manufacturing a light emitting device, the epitaxial structure of the light emitting device is grown with the high-quality nitride semiconductor thin film layer (E) after the low-crystalline-quality nitride semiconductor thin film layer is grown on the different substrate (S) The light emitting element epitaxial structure includes an electron injection layer, a light emitting layer, and a hole injection layer.

Meanwhile, according to the related art, the nitride semiconductor thin film formed on the different substrate S is usually formed by chemical vapor deposition (CVD). These methods are accomplished by supplying the sources necessary for thin film formation from the top of the substrate to the substrate surface.

Therefore, the thin film is effectively formed on the top of the substrate and is not usually formed on the side.

The high-quality nitride semiconductor thin film is formed in an atmosphere in which ammonia as a nitrogen source and a reactive gas such as hydrogen as a carrier gas and an organic metal compound as a source of Ga are present at a high temperature of about 1000 ° C or higher.

At this time, the side surface of the exposed substrate S reacts with a reactive source and gas at a high temperature, resulting in side collapse and corrosion (C).

Such side collapse and corrosion prevent the thin film and the substrate from being destroyed or the nitride semiconductor light emitting device of high quality near the side can not be manufactured.

For example, the ZnO substrate reacts with ammonia and hydrogen to corrode, and the Si substrate reacts with Ga at high temperatures and corrodes.

For example, as shown in FIG. 1, the nitride semiconductor thin film layer E is not formed on the side surface of the substrate S, and severe corrosion C is generated on the side surface.

Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of effectively preventing side collapse and chemical corrosion occurring on the side surface of a substrate to provide a high quality nitride semiconductor layer.

The light emitting device according to the embodiment includes a substrate 105; A first nitride semiconductor layer 107 disposed on the upper surface of the substrate 105; An amorphous layer (108) disposed on the substrate (105); A first conductive semiconductor layer 112 on the first nitride semiconductor layer 107; An active layer 114 on the first conductive semiconductor layer 112; And a second conductive semiconductor layer 116 on the active layer 114.

Or a light emitting device according to an embodiment includes a substrate 105; A plurality of spaced apart insulating layers 109a on the upper surface of the substrate 105; A second nitride semiconductor layer 109b disposed on the substrate 105 and the insulating layer 109a; An amorphous layer 108 disposed on a side of the substrate 105; A first conductive semiconductor layer 112 on the second nitride semiconductor layer 109b; An active layer 114 on the first conductive semiconductor layer 112; And a second conductive semiconductor layer 116 on the active layer 114.

Or an illumination system according to an embodiment may include a light emitting unit having a light emitting element.

According to the light emitting device, the method of manufacturing the light emitting device, the light emitting device package, and the illumination system according to the embodiment, when the nitride semiconductor thin film is formed on a thermally or chemically reactive heterogeneous substrate, side collapse and chemical corrosion It is possible to provide a nitride semiconductor layer of high quality and to improve the productivity of the nitride semiconductor light emitting device using the nitride semiconductor layer.

1 is a cross-sectional view of a nitride semiconductor layer formed on a substrate according to a conventional technique.
2 is a cross-sectional view of a light emitting device according to the first embodiment;
3 is a cross-sectional view of a light emitting device according to a second embodiment.
4 is a cross-sectional view of a light emitting device according to a third embodiment;
5 is a sectional view of a light emitting device according to a fourth embodiment;
6 to 10 are process drawings of a light emitting device according to an embodiment.
11 is a cross-sectional view of a light emitting device package according to an embodiment.
12 is a perspective view of a lighting apparatus according to an embodiment;

In the description of the embodiments, each layer (film), region, pattern or structure is referred to as being "on" or "under" the substrate, each layer (film) Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

(Example)

2 is a cross-sectional view of the light emitting device 100 according to the first embodiment.

The light emitting device 100 according to the embodiment includes a substrate 105, a first nitride semiconductor layer 107 on the substrate 105, an amorphous layer 108 disposed on the substrate 105, A first conductive semiconductor layer 112 on the first nitride semiconductor layer 107; an active layer 114 on the first conductive semiconductor layer 112; and a second conductive semiconductor layer 112 on the active layer 114. [ Semiconductor layer 116 may be included.

The first conductive semiconductor layer 112, the active layer 114, and the second conductive semiconductor layer 116 may form the light emitting structure 110.

The first embodiment shown in FIG. 2 is an example of a vertical type light emitting device, and the substrate 105 may include a conductive substrate.

In the first embodiment, the first electrode layer 106 disposed on the bottom surface of the conductive substrate, the transparent electrode layer 122 disposed on the second conductive type semiconductor layer 116, and the transparent electrode layer 122 disposed on the transparent electrode layer 122 And a second electrode 124.

The embodiment can be applied to a vertical type light emitting device as well as a horizontal type light emitting device.

For example, as shown in FIG. 3, the substrate 105 in the second embodiment may include an insulating substrate, and the second embodiment may include a first electrode 117 A light transmitting electrode layer 122 disposed on the second conductive semiconductor layer 116 and a second electrode 124 disposed on the light transmitting electrode layer 122. [

The embodiments of the present invention provide a light emitting device capable of effectively preventing side collapse and chemical corrosion occurring on the side surface of a substrate when forming a nitride semiconductor thin film on a different substrate, thereby providing a nitride semiconductor layer of high quality.

For this, the light emitting device according to the embodiment may include a first nitride semiconductor layer 107 on the substrate 105 and an amorphous layer 108 disposed on the substrate 105.

The substrate 105 may be made of a single crystal material suitable for forming an oxide such as Si, ZnO, or a nitride semiconductor.

The amorphous layer 108 may include a first amorphous layer 108a disposed on a side surface of the substrate 105. [ For example, the first amorphous layer 108a may comprise an amorphous nitride or an amorphous oxide. For example, the first amorphous layer 108a may be any one of SiN _x , Si _x N _y , Si _x N _y O _z , SiO ₂ , and GeO ₂ , but is not limited thereto.

According to the embodiment, since the first amorphous layer 108a is formed of a side protective layer including amorphous nitride or amorphous oxide, the exposed side of the substrate 105 is thermally and chemically corroded in a high-temperature reactive atmosphere effectively .

The first nitride semiconductor layer 107 may be a nitride semiconductor layer containing AlN or Al.

The first nitride semiconductor layer 107 may be a single layer or a plurality of layers disposed on the upper surface of the substrate 105.

According to the light emitting device according to the embodiment, when the nitride semiconductor thin film is formed on a heterogeneous substrate that is thermally or chemically reactive, side collapse and chemical corrosion generated on the side surface of the substrate are effectively prevented, thereby providing a high quality nitride semiconductor layer, The productivity of the nitride semiconductor light emitting device can be improved.

Specifically, the interatomic bonding force of AlN is about 2.88 eV, which is sufficiently higher than that of GaN between the atomic bonding force of about 2.2 eV and the InN atomic bonding force of about 1.93 eV, which is excellent in thermal and chemical stability.

Therefore, when the first nitride semiconductor layer 107 is a nitride semiconductor thin film layer including AlN or Al, the upper and the side portions of the substrate 105 are thermally and chemically etched during a high-quality epitaxial growth process at a high temperature of about 1000 ° C or higher And helps to form a high-quality light emitting structure 110 at a high temperature.

On the other hand, the temperature at which the first nitride semiconductor layer 107 is grown is maintained at a temperature at which the substrate 105 is not corroded, so that the exposed side of the substrate can be prevented from being thermally and chemically corroded.

Since the first amorphous layer 108a is formed of amorphous nitride or amorphous oxide and is formed as a side protective layer, it is possible to effectively prevent the side surface of the exposed substrate 105 from thermally and chemically corroding in a high temperature reactive atmosphere have.

Since the side surface and the upper surface of the heterojunction substrate 105 are covered with the first amorphous layer 108a and the first nitride semiconductor layer 107 which are the side protective layers, It is possible to form the thin film with high quality under the optimum high-quality thin film growth conditions in a reactive gas and a source atmosphere at a high temperature of 1000 ° C or higher.

Thus, according to the embodiment, a light emitting device can be manufactured with a high-quality light emitting device structure and excellent productivity.

Meanwhile, in the light emitting device according to the embodiment, the first nitride semiconductor layer 107 may have a plurality of mutually spaced nano-rods that partially expose the upper surface of the substrate 105.

The amorphous layer 108 may include a second amorphous layer 108b disposed between the first nitride semiconductor layers 107 having the nanorod shape.

The second amorphous layer 108b may include amorphous nitride or amorphous oxide. For example, the second amorphous layer 108b may be any one of SiN _x , Si _x N _y , Si _x N _y O _z , SiO ₂ , and GeO ₂ , but is not limited thereto.

The nanorad may have a diameter of about 5 nm to about 500 nm. If the diameter of the nanorads is less than 5 nm, the interface defects formed by the nanorads meeting each other may increase. On the other hand, when the diameter of the nanorad is larger than 500 nm, crystal defects due to lattice mismatch may occur at the interface between the nanorad and the substrate.

The nanorod may be formed at a relatively low temperature compared with the formation temperature of the light emitting structure 110 by a sputtering method, a chemical vapor deposition method, a physical vapor deposition method, or the like.

In the embodiment, the amorphous layer 108 may be formed by depositing an amorphous material such as SiN _x or SiO ₂ on the exposed upper surface and the side surface of the substrate by using a plasma chemical vapor deposition method or a solution deposition method after the nanorod is formed on the substrate 105 .

The first conductive semiconductor layer 112 may be formed as a high quality nitride semiconductor thin film layer at a high temperature by using a chemical vapor deposition method or a physical vapor deposition method using the nano-rod-shaped first nitride semiconductor layer 107 as a seed have.

According to the light emitting device according to the embodiment, when the nitride semiconductor thin film is formed on a heterogeneous substrate that is thermally or chemically reactive, side collapse and chemical corrosion generated on the side surface of the substrate are effectively prevented, thereby providing a high quality nitride semiconductor layer, The productivity of the nitride semiconductor light emitting device can be improved.

In addition, in the embodiment, since the first nitride semiconductor layer 107 in the form of a nano-rod is provided, light extraction efficiency can be improved by scattering and reflecting light emitted.

4 is a cross-sectional view of a light emitting device 103 according to the third embodiment.

The third embodiment can adopt the technical features of the first embodiment or the second embodiment, and the main features of the third embodiment will be described below.

The light emitting device 103 according to the third embodiment includes a substrate 105 and a plurality of spaced insulating layers 109a on the substrate 105 and a plurality of spaced insulating layers 109a on the substrate 105 and the insulating layer 109a An amorphous layer 108 disposed on a side surface of the substrate 105; a first conductive semiconductor layer 112 on the second nitride semiconductor layer 109b; An active layer 114 may be formed on the first conductive semiconductor layer 112 and a second conductive semiconductor layer 116 may be formed on the active layer 114.

The insulating layer 109a may have a nanorod shape and the second nitride semiconductor layer 109b may be a nitride semiconductor layer containing Al _x Ga _1-x N (where 0 <x <1) .

According to the third embodiment, after the pattern of the insulating layer 109a is formed on the substrate 105, the second nitride semiconductor layer 109b can be formed by a lateral growth method. Accordingly, the upper surface of the substrate 105 is effectively protected by the second nitride semiconductor layer 109b and the insulating layer 109a, and the high-quality light emitting structure 110 can be formed by blocking the potential.

The third embodiment is an example of a vertical light emitting device. For example, the substrate 105 includes a conductive substrate, a first electrode layer 106 disposed on the bottom surface of the conductive substrate, a second electrode 124 disposed on the second conductive type semiconductor layer 116, ).

The embodiment can be applied to a horizontal type light emitting device as shown in Fig.

For example, in the fourth embodiment, the substrate 105 includes an insulating substrate and includes a first electrode 117 disposed on the first conductive type semiconductor layer 112 and a second electrode 117 disposed on the second conductive type semiconductor layer 116 (Not shown).

According to the light emitting device according to the embodiment, when the nitride semiconductor thin film is formed on a heterogeneous substrate that is thermally or chemically reactive, side collapse and chemical corrosion that occur at the side surface of the substrate are effectively prevented, and the second nitride semiconductor layer 109b, The upper surface of the substrate 105 can be effectively protected by the insulating layer 109a and the high-quality light emitting structure 110 can be formed by blocking the potential.

Hereinafter, a method of manufacturing the light emitting device according to the embodiment will be described with reference to FIGS. 6 to 10, and the features of the embodiments will be described in detail. 6 to 10 are not limited to the process of the first embodiment and the manufacturing method of the embodiments.

6 is a perspective view of a manufacturing process of the embodiment.

First, as shown in Fig. 6, a substrate 105 is prepared. The substrate 105 may be formed of a material having excellent thermal conductivity, and may be a conductive substrate or an insulating substrate. For example, the substrate 105 may be at least one of SiC, Si, GaAs, GaN, sapphire (Al ₂ O ₃ ), ZnO, GaP, InP, Ge, and Ga ₂ O ₃ .

Next, the first nitride semiconductor layer 107 may be formed on the substrate 105. The first nitride semiconductor layer 107 may be a single layer or a plurality of layers disposed on the upper surface of the substrate 105.

The interatomic bonding force of AlN is sufficiently higher than the interatomic bonding force of GaN or the interatomic bonding force of InN, which is excellent in thermal and chemical stability.

Therefore, when the first nitride semiconductor layer 107 is a nitride semiconductor thin film layer including AlN or Al, the upper and the side portions of the substrate 105 are thermally and chemically etched during a high-quality epitaxial growth process at a high temperature of about 1000 ° C or higher And helps to form a high-quality light emitting structure 110 at a high temperature.

On the other hand, the temperature at which the first nitride semiconductor layer 107 is grown is maintained at a temperature at which the substrate 105 is not corroded, so that the exposed side of the substrate can be prevented from being thermally and chemically corroded.

Meanwhile, in the light emitting device according to the embodiment, the first nitride semiconductor layer 107 may have a plurality of mutually spaced nano-rods that partially expose the upper surface of the substrate 105.

The nanorad may have a diameter of about 5 nm to about 500 nm. If the diameter of the nanorads is less than 5 nm, the interface defects formed by the nanorads meeting each other may increase. On the other hand, when the diameter of the nanorad is larger than 500 nm, crystal defects due to lattice mismatch may occur at the interface between the nanorad and the substrate.

The nanorod may be formed at a relatively low temperature compared with the formation temperature of the light emitting structure 110 by a sputtering method, a chemical vapor deposition method, a physical vapor deposition method, or the like.

Next, as shown in FIG. 7, the first amorphous layer 108a is formed as a side protective layer including amorphous nitride or amorphous oxide, whereby the exposed side of the substrate 105 is thermally and chemically corroded in a high temperature reactive atmosphere Can be effectively prevented.

Since the side surface and the upper surface of the heterojunction substrate 105 are covered with the first amorphous layer 108a and the first nitride semiconductor layer 107 which are the side protective layers, the light emitting structure 110 is formed on the substrate 105, It is possible to form a thin film with high quality under the optimum high-quality thin film growth conditions in a reactive gas and a source atmosphere at a high temperature of 1000 ° C or higher without damage or corrosion of the substrate.

Thus, according to the embodiment, a light emitting device can be manufactured with a high-quality light emitting device structure and excellent productivity.

In the embodiment, the amorphous layer 108 may be formed by depositing an amorphous material such as SiN _x or SiO ₂ on the exposed upper surface and the side surface of the substrate by using a plasma chemical vapor deposition method or a solution deposition method after the nanorod is formed on the substrate 105 .

For example, when the first nitride semiconductor layer 107 is in the form of a nanorod, a second amorphous layer 108b disposed between the first nitride semiconductor layers 107 may be formed.

As shown in FIGS. 7 and 8, after the formation of the preliminary second amorphous layer 108c higher than the first nitride semiconductor layer 107, the upper surface of the first nitride semiconductor layer 107 may be partially removed.

According to the embodiment, after the first nitride semiconductor layer 107 is formed on the substrate 105, the amorphous layer 108 forming process can be performed.

On the other hand, when the first amorphous layer 108a, which is a side protective layer, is first formed and then the first nitride semiconductor layer 107 is formed on the substrate 105, the first amorphous layer 108a is formed with the first nitride semiconductor layer 108a, The first amorphous layer 108a may be formed first, and the substrate surface may be damaged, so that the first nitride semiconductor layer 107 may not be properly formed on the substrate surface.

Next, as shown in FIG. 9, the first conductivity type semiconductor layer 112 is formed by using the first nitride semiconductor layer 107 in the form of a seed, using a Narrow-Rod type nitride semiconductor layer 107 at a high temperature using a chemical vapor deposition method or a physical vapor deposition method. Nitride semiconductor thin film layer.

The first conductive semiconductor layer 112 may be formed of a semiconductor compound. Group 3-Group 5, Group 2-Group 6, and the like, and the first conductive type dopant may be doped. When the first conductive semiconductor layer 112 is an n-type semiconductor layer, the first conductive dopant may include Si, Ge, Sn, Se, and Te as an n-type dopant.

The first conductive semiconductor layer 112 includes a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) .

The first conductive semiconductor layer 112 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

Next, the active layer 114 may be formed on the first conductivity type semiconductor layer 112.

The active layer 114 may be formed of at least one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure.

For example, the active layer 114 may be formed with a multiple quantum well structure by injecting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) But is not limited thereto.

The active layer 114 may include a quantum well and a quantum wall. For example, the active layer 114 may be formed of one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP But is not limited thereto.

Thereafter, an electron blocking layer (not shown) is formed on the active layer 114 to serve as electron blocking and cladding of the active layer, thereby improving the luminous efficiency. For example, the electron blocking layer may be formed of an Al _x In _y Ga _(1-xy) N (0? _{X ? 1, 0? Y ? 1} ) semiconductor, Lt; RTI ID = 0.0 &gt; bandgap &lt; / RTI &gt;

Next, the second conductive semiconductor layer 116 may be formed of a semiconductor compound on the active layer 114. The second conductive semiconductor layer 116 may be formed of a compound semiconductor such as a Group III-V, a Group II-VI, or the like, and may be doped with a second conductive dopant.

For example, the second conductivity type semiconductor layer 116 may be a semiconductor having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + &Lt; / RTI &gt; When the second conductive semiconductor layer 116 is a p-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as p-type dopants.

In an embodiment, the first conductive semiconductor layer 112 may be an n-type semiconductor layer, and the second conductive semiconductor layer 116 may be a p-type semiconductor layer.

Also, on the second conductive semiconductor layer 116, a semiconductor (e.g., an n-type semiconductor) (not shown) having a polarity opposite to that of the second conductive type may be formed. Accordingly, the light emitting structure 110 may have any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

10, a light-transmitting electrode layer 122 may be formed on the second conductive semiconductor layer 116, a second electrode 124 may be formed on the light-transmitting electrode layer 122, The first electrode layer 106 may be formed on the bottom surface of the substrate 105.

The light-transmitting electrode layer 122 may be formed by laminating a single metal, a metal alloy, a metal oxide, or the like so as to efficiently perform carrier injection. For example, the light-transmitting electrode layer 122 may be formed of a good material in electrical contact with a semiconductor.

For example, the transparent electrode layer 122 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (ZnO), indium gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON nitride, AGZO Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Ni, IrOx / Au, and Ni / IrOx / , Au, and Hf, and is not limited to such a material.

The first electrode layer 106 may include a reflective layer. For example, the first electrode layer 106 may be formed of a material excellent in reflectivity and excellent in electrical contact. For example, the first electrode layer 106 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf.

The first electrode layer 106 may be formed of a multilayer structure using a metal or an alloy and a transparent conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, or ATO. For example, IZO / Ni , AZO / Ag, IZO / Ag / Ni, and AZO / Ag / Ni.

According to the light emitting device according to the embodiment, when the nitride semiconductor thin film is formed on a heterogeneous substrate that is thermally or chemically reactive, side collapse and chemical corrosion generated on the side surface of the substrate are effectively prevented, thereby providing a high quality nitride semiconductor layer, The productivity of the nitride semiconductor light emitting device can be improved.

11 is a view illustrating a light emitting device package having the light emitting device according to the embodiments.

The light emitting device package according to the embodiment includes a package body 205, a third electrode layer 213 and a fourth electrode layer 214 provided on the package body 205, A light emitting device 100 electrically connected to the third electrode layer 213 and the fourth electrode layer 214 and a molding member 230 surrounding the light emitting device 100 are included.

The third electrode layer 213 and the fourth electrode layer 214 are electrically isolated from each other and provide power to the light emitting device 100. The third electrode layer 213 and the fourth electrode layer 214 may function to increase light efficiency by reflecting the light generated from the light emitting device 100, And may serve to discharge heat to the outside.

The light emitting device 100 may be electrically connected to the third electrode layer 213 and / or the fourth electrode layer 214 by a wire, flip chip, or die bonding method.

12 is an exploded perspective view of an illumination system according to an embodiment.

The lighting apparatus according to the embodiment may include a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device or a light emitting device package according to the embodiment.

The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250. The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670. The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

The substrate 105, the first nitride semiconductor layer 107,
The amorphous layer 108, the first conductivity type semiconductor layer 112,
The active layer 114, the second conductivity type semiconductor layer 116,

Claims (16)

Board;
A first nitride semiconductor layer disposed on the upper surface of the substrate;
An amorphous layer disposed on the substrate;
A first conductive semiconductor layer on the first nitride semiconductor layer;
An active layer on the first conductive semiconductor layer; And
And a second conductive semiconductor layer on the active layer. The method according to claim 1,
The amorphous layer
And a first amorphous layer disposed on a side surface of the substrate. The method according to claim 1,
The first nitride semiconductor layer
And a nitride semiconductor layer containing AlN or Al. 3. The method of claim 2,
The first nitride semiconductor layer
Wherein the light emitting element is a single layer or a plurality of layers disposed on an upper surface of the substrate. 3. The method of claim 2,
The first nitride semiconductor layer
And a plurality of mutually spaced nanorods that partially expose an upper surface of the substrate. 6. The method of claim 5,
The amorphous layer
And a second amorphous layer disposed between the first n-type nitride semiconductor layers. The method according to claim 6,
The first amorphous layer or the second amorphous layer
SiN _x or SiO ₂ . The method according to claim 1,
Wherein the substrate comprises a conductive substrate,
A first electrode layer disposed on a bottom surface of the conductive substrate;
And a second electrode disposed on the second conductive type semiconductor layer. The method according to claim 1,
Wherein the substrate comprises an insulating substrate,
A first electrode disposed on the first conductive type semiconductor layer;
And a second electrode disposed on the second conductive type semiconductor layer. Board;
A plurality of spaced insulating layers on the substrate;
A second nitride semiconductor layer disposed on the substrate and the insulating layer;
An amorphous layer disposed on the substrate side;
A first conductive semiconductor layer on the second nitride semiconductor layer;
An active layer on the first conductive semiconductor layer; And
And a second conductive semiconductor layer on the active layer. 11. The method of claim 10,
The second nitride semiconductor layer
Al _x Ga _1-x N (where 0 &lt; x &lt; 1). 11. The method of claim 10,
The insulating layer
A light emitting device having a nano-rod shape. 11. The method of claim 10,
The amorphous layer
SiN _x or SiO ₂ . 11. The method of claim 10,
Wherein the substrate comprises a conductive substrate,
A first electrode layer disposed on a bottom surface of the conductive substrate;
And a second electrode disposed on the second conductive type semiconductor layer. 11. The method of claim 10,
Wherein the substrate comprises an insulating substrate,
A first electrode disposed on the first conductive type semiconductor layer;
And a second electrode disposed on the second conductive type semiconductor layer. An illumination system comprising a light-emitting unit comprising the light-emitting element according to any one of claims 1 to 15.

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