KR20130006970A

KR20130006970A - Light emitting device and method for fabricating the same

Info

Publication number: KR20130006970A
Application number: KR1020110062683A
Authority: KR
Inventors: 박건; 김선모; 오충석; 황세광; 송호근; 원준호; 박지수
Original assignee: (주)세미머티리얼즈; 박건
Priority date: 2011-06-28
Filing date: 2011-06-28
Publication date: 2013-01-18

Abstract

The embodiment relates to a light emitting device and a method of manufacturing the light emitting device.
The light emitting device according to the embodiment includes a conductive substrate; And an active layer formed in contact with the conductive substrate, wherein the active layer and the conductive substrate may be formed of the same series of materials.

Description

LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME}

The embodiment relates to a light emitting device and a method of manufacturing the light emitting device.

A light emitting device is a semiconductor PN junction device that emits light by converting electrical energy into light energy. A light emitting device emits light by flowing a current through a compound semiconductor terminal by coupling electrons and holes in the vicinity of the PN junction or in an active layer. Element.

According to the prior art, a process of forming a buffer layer on a sapphire substrate and sequentially forming an N-type GaN layer, an active layer, and a P-type GaN layer on the buffer layer is performed.

On the other hand, according to the prior art there is a problem that the manufacturing method of the light emitting device is somewhat complicated and the manufacturing cost increases.

Embodiments provide a light emitting device and a method of manufacturing the light emitting device which can improve the light emitting efficiency while simplifying the manufacturing process.

The light emitting device according to the embodiment includes a conductive substrate; And an active layer formed in contact with the conductive substrate, wherein the active layer and the conductive substrate may be formed of the same series of materials.

In addition, the manufacturing method of the light emitting device according to the embodiment comprises the steps of preparing a conductive substrate; And forming an active layer in contact with the conductive substrate, wherein the active layer and the conductive substrate may be formed of the same series of materials.

According to the light emitting device and the manufacturing method of the light emitting device according to the embodiment, the light emitting efficiency can be improved while simplifying the manufacturing process by forming an active layer on the conductive substrate.

In addition, according to the embodiment, since the active layer and the conductive substrate are formed of the same series of materials, the internal luminous efficiency may be increased.

1 is a cross-sectional view of a light emitting device according to an embodiment.
2 to 4 are cross-sectional views of a method of manufacturing a light emitting device according to the embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

Embodiment of the present invention can be modified in various other forms, the scope of the present invention is not limited to the embodiments described below,

In addition, in the description of the embodiments, the shape and size of elements in the drawings may be exaggerated for clarity.

(Example)

1 is a cross-sectional view of a light emitting device 100 according to an embodiment.

The light emitting device 100 according to the embodiment includes a conductive substrate 102 and an active layer 114 formed in contact with the conductive substrate 102, and the active layer 114 and the conductive substrate 102 are formed of the same series of materials. It can be formed as.

According to the light emitting device according to the embodiment, the light emitting efficiency may be improved while simplifying the manufacturing process by forming the active layer on the conductive substrate.

In addition, according to the embodiment, since the active layer and the conductive substrate are formed of the same series of materials, there is almost no difference in thermal expansion coefficient between the conductive substrate 102 and the active layer 114, and thus the potential of the dislocation transferred to the active layer 114. It can prevent occurrence. Accordingly, since the defects acting as sites of non-luminescence defects are significantly reduced, the internal luminous efficiency of the light emitting device can be increased.

For example, when the conductive substrate 102 is a silicon (Si) based substrate, the active layer 114 may be an active layer including silicon (Si).

In addition, when the conductive substrate 102 is a gallium nitride (GaN) based substrate, the active layer 114 may include gallium nitride (GaN), but is not limited thereto.

In an embodiment, the conductive substrate 102 may be a conductive substrate conductive to the first conductivity type. Accordingly, the first conductive semiconductor layer forming process may not be performed on the conductive substrate 102.

If the conductive substrate 102 is an undoped substrate, the conductive substrate 102 may include a first conductive region (not shown) doped with a first conductive impurity on the conductive substrate 102.

The first conductivity type doping process for the conductive substrate 102 may be performed before the epitaxial process of the nitride semiconductor layer.

The conductive substrate 102 may include an insulating substrate (not shown) below and a first conductive substrate doped with impurities to impart a first conductivity to the insulating substrate.

The embodiment may include a second conductive semiconductor layer 116 formed on the active layer 114 and a light-transmitting ohmic layer 120 formed on the second conductive semiconductor layer 116.

In addition, the embodiment may include a second electrode pad 132 on the transparent ohmic layer 120 and a first electrode pad 131 formed on the exposed conductive substrate 102.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 2 to 4.

First, the conductive substrate 102 is prepared as shown in FIG. 2.

The conductive substrate 102 may include, but is not limited to, a silicon (Si) substrate, a silicon carbide (SiC) substrate, a gallium arsenic GaAs substrate, a gallium nitride (GaN) substrate, and the like.

On the other hand, the conductive substrate 102 may include an insulating substrate (not shown) on the lower side, and may include a first conductive substrate doped with an impurity to impart a first conductivity to the insulating substrate.

The conductive substrate 102 may be a conductive substrate conductive to the first conductivity type. Accordingly, the first conductive semiconductor layer forming process may not be performed on the conductive substrate 102.

For example, when the conductive substrate 102 is a silicon (Si) substrate, the silicon substrate may be an N-type silicon substrate doped with group 5 ion elements.

Meanwhile, when the conductive substrate 102 is a gallium nitride (GaN) substrate, the conductive substrate 102 may be an N-type gallium nitride substrate doped with a Group 4 ion element, but is not limited thereto.

In addition, when the conductive substrate 102 is an undoped substrate, the conductive substrate 102 may include a first conductive semiconductor layer (not shown) doped with a first conductive impurity on the conductive substrate 102.

For example, when the conductive substrate 102 is a silicon (Si) substrate, an N-type semiconductor layer doped with ion elements of group 5 may be formed on the silicon substrate.

In addition, when the conductive substrate 102 is a gallium nitride (GaN) substrate, an N-type semiconductor layer doped with a Group 4 ion element may be formed on the gallium nitride substrate.

Next, as shown in FIG. 3, the active layer 114 is formed on the conductive substrate 102.

The active layer 114 may be formed of at least one of a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure.

For example, the active layer 114 may be formed of any one or more pair structures of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, but is not limited thereto.

The active layer 114 may form an N-type GaN layer using a chemical vapor deposition method (CVD), molecular beam epitaxy (MBE), sputtering or hydroxide vapor phase epitaxy (HVPE).

The active layer 114 may be formed by injecting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. no.

Next, as shown in FIG. 3, a second conductive semiconductor layer 116 is formed on the active layer 114.

The second conductive type semiconductor layer 116 is a second conductive type dopant is doped III-V compound semiconductor, for example _{-5, In x Al y Ga 1 -x-} y N (0≤x≤1, 0≤y≤ And 1, 0 ≦ x + y ≦ 1). When the second conductivity type semiconductor layer 116 is a P type semiconductor layer, the second conductivity type dopant may include Mg, Zn, Ca, Sr, Ba, or the like as a P type dopant.

The second conductive semiconductor layer 116 is injected with a material containing p-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and magnesium (Mg) in the chamber. But may be formed, but is not limited thereto.

Thereafter, the transmissive ohmic layer 120 is formed on the second conductivity type semiconductor layer 116. The transparent ohmic layer 120 may function as a carrier diffusion layer.

For example, the translucent ohmic layer 120 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), and GZO (GZO). gallium zinc oxide), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), IZON (IZO Nitride), ZnO, AGZO (Al-Ga ZnO), IGZO (In-Ga) ZnO), IrOx, RuOx, NiO and the like, and may be formed, but are not limited to these materials.

Next, as shown in FIG. 4, after the transmissive ohmic layer, the second conductive semiconductor layer 116, and the active layer 114 are partially removed, the second pad electrode 132 and the conductive substrate are disposed on the translucent ohmic layer 120. The first pad electrode 131 may be formed on the 102.

The first pad electrode 131 may include Ti / Au, and the second pad electrode 132 may include Ni / Au, but is not limited thereto.

Although the embodiments of the present invention have been illustrated and described above, the present invention is not limited to the specific embodiments described above.

Claims

Conductive substrate; And
An active layer formed in contact with the conductive substrate;
The active layer and the conductive substrate is a light emitting device formed of the same series of materials.

The method according to claim 1,
When the conductive substrate is a silicon (Si) based substrate,
The active layer is a light emitting device that is an active layer containing silicon (Si).

The method according to claim 1,
When the conductive substrate is a gallium nitride (GaN) based substrate,
The active layer includes a gallium nitride (GaN).

The method according to claim 1,
The light emitting device further comprises a second conductive semiconductor layer formed on the active layer.

The method according to claim 1,
The conductive substrate is
A light emitting device comprising a conductive substrate conductive in a first conductivity type.

The method according to claim 1,
The conductive substrate is
A light emitting device comprising an insulating substrate on a lower side and a first conductive type substrate doped with impurities to impart a first conductivity to the insulating substrate.

Preparing a conductive substrate; And
Forming an active layer in contact with the conductive substrate;
The active layer and the conductive substrate is a method of manufacturing a light emitting device formed of the same series of materials.

The method of claim 7, wherein
When the conductive substrate is a silicon (Si) based substrate,
The active layer is a method of manufacturing a light emitting device that is an active layer containing silicon (Si).

The method of claim 7, wherein
When the conductive substrate is a gallium nitride (GaN) based substrate,
The active layer is a manufacturing method of a light emitting device containing gallium nitride (GaN).

The method of claim 7, wherein
The method of manufacturing a light emitting device further comprising the step of forming a second conductive semiconductor layer on the active layer.

The method of claim 7, wherein
The conductive substrate is
Method of manufacturing a light emitting device comprising a conductive substrate conductive to the first conductivity type.

The method of claim 7, wherein
The conductive substrate is
A method of manufacturing a light emitting device, comprising a first conductive substrate including an insulating substrate on a lower side and doped with impurities to impart a first conductivity to the insulating substrate.