KR102261958B1 - Light emitting device and lighting apparatus - Google Patents

Abstract

The embodiment relates to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device. The light emitting device according to the embodiment includes an active layer 114 disposed on the first conductivity type semiconductor layer 112 including a first conductivity type semiconductor layer 112 , a quantum well 114W and a quantum wall 114B; A second conductivity type semiconductor layer 116 disposed on the active layer 114 may be included.
In the embodiment, the quantum wall 114B includes a first quantum wall 114BA disposed adjacent to the first conductivity type semiconductor layer 112 compared to the second conductivity type semiconductor layer 116 , and the first conductivity type semiconductor layer 116 . A second quantum wall 114BB disposed adjacent to the second conductivity type semiconductor layer 116 compared to the type semiconductor layer 112 may be included.
In an embodiment, the first quantum wall 114BA includes a first GaN barrier layer 114B1 , a second GaN barrier layer 114B3 , and between the first GaN barrier layer 114B1 and the second GaN barrier layer 114B3 . A second conductivity type Al _x Ga _1-x N barrier layer (0≤x<1) 114B2 interposed therebetween may be included.

Description

Light emitting device and lighting device {LIGHT EMITTING DEVICE AND LIGHTING APPARATUS}

The embodiment relates to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device.

A light emitting device (Light Emitting Device) can be generated by combining a pn junction diode having a characteristic in which electric energy is converted into light energy, an element of Group 3-5 or Group 2-6 element on the periodic table, and the composition ratio of the compound semiconductor It is possible to realize various colors by adjusting the

For example, nitride semiconductors are receiving great attention in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet (UV) light emitting device, and a red light emitting device using a nitride semiconductor have been commercialized and widely used.

For example, in the case of an ultraviolet light emitting diode (UV LED), it is a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm, and is used for sterilization and purification in the case of a short wavelength in the wavelength band, and in the case of a long wavelength It can be used for an exposure machine or a curing machine.

Meanwhile, in the prior art, the light emitting structure layer includes an electron injection layer, an active layer, and a hole injection layer, and the hole does not move to the quantum well adjacent to the electron injection layer due to the low mobility of the hole in the carrier, Light emission mainly occurs in several quantum wells adjacent to the hole injection layer.

This is because the quantum wells adjacent to the electron injection layer are relatively short of holes, and the electrons injected into the quantum wells adjacent to the electron injection layer are rather non-radiatively recombine, reducing the efficiency of the light emitting device and causing electrical There is also a problem that adversely affects the characteristics.

Embodiments are to provide a light emitting device with improved luminous efficiency, a method for manufacturing a light emitting device, a light emitting device package, and a lighting device.

Another object of the embodiment is to provide a light emitting device with improved electrical characteristics, a method for manufacturing the light emitting device, a light emitting device package, and a lighting device.

The light emitting device according to the embodiment includes an active layer 114 disposed on the first conductivity type semiconductor layer 112 including a first conductivity type semiconductor layer 112 , a quantum well 114W and a quantum wall 114B; A second conductivity type semiconductor layer 116 disposed on the active layer 114 may be included.

In the embodiment, the quantum wall 114B includes a first quantum wall 114BA disposed adjacent to the first conductivity type semiconductor layer 112 compared to the second conductivity type semiconductor layer 116 , and the first conductivity type semiconductor layer 116 . A second quantum wall 114BB disposed adjacent to the second conductivity type semiconductor layer 116 compared to the type semiconductor layer 112 may be included.

In an embodiment, the first quantum wall 114BA includes a first GaN barrier layer 114B1 , a second GaN barrier layer 114B3 , and between the first GaN barrier layer 114B1 and the second GaN barrier layer 114B3 . A second conductivity type Al _x Ga _1-x N barrier layer (0≤x<1) 114B2 interposed therebetween may be included.

The lighting device according to the embodiment may include a light emitting unit including the light emitting device.

Embodiments may provide a light emitting device with improved luminous efficiency, a method for manufacturing a light emitting device, a light emitting device package, and a lighting device.

In addition, the embodiment may provide a light emitting device having improved electrical characteristics, a method of manufacturing the light emitting device, a light emitting device package, and a lighting device.

1 is a cross-sectional view of a light emitting device according to an embodiment;
2A is an exemplary diagram of a bandgap diagram of a light emitting device according to the first embodiment;
2B is an exemplary diagram of a bandgap diagram of a light emitting device according to a second embodiment;
3 is luminous intensity (Po) data of a light emitting device according to an embodiment.
4 is an operating voltage (VF3) data of a light emitting device according to the embodiment;
5 is an exemplary diagram of a bandgap diagram of a light emitting device according to a third embodiment;
6 to 8 are cross-sectional views of the manufacturing method of the light emitting device according to the embodiment.
9 is a cross-sectional view of a light emitting device package according to an embodiment.
10 is a perspective view of a lighting device according to the embodiment;

In the description of an embodiment, each layer (film), region, pattern or structure is “on/over” or “under” the substrate, each layer (film), region, pad or pattern. In the case of being described as being formed on, “on/over” and “under” include both “directly” or “indirectly” formed through another layer. do. In addition, the criteria for the upper / upper or lower of each layer will be described with reference to the drawings.

(Example)

1 is a cross-sectional view of a light emitting device 100 according to an embodiment.

The light emitting device 100 according to the embodiment may include a light emitting structure 110 including a first conductivity type semiconductor layer 112 , an active layer 114 , and a second conductivity type semiconductor layer 116 .

In addition, the embodiment may include a substrate 105 , an electron blocking layer 118 , a light-transmitting electrode layer 140 , and a current diffusion layer 130 . A concave-convex structure P may be formed on the substrate 105 .

In an embodiment, a first electrode 151 and a second electrode 152 may be electrically connected to the first conductivity-type semiconductor layer 112 and the light-transmitting electrode layer 140 , respectively.

Detailed description of each configuration will be described in the following manufacturing method.

2A is an exemplary diagram of a bandgap diagram of a light emitting device according to the first embodiment.

The light emitting device according to the first embodiment may include a first conductivity type semiconductor layer 112 , an active layer 114 , and a second conductivity type semiconductor layer 116 on the active layer 114 .

The active layer 114 may include a quantum well 114W and a quantum wall 114B, and may be disposed on the first conductivity-type semiconductor layer 112 .

In the embodiment, the quantum wall 114B includes a first quantum wall 114BA disposed adjacent to the first conductivity type semiconductor layer 112 compared to the second conductivity type semiconductor layer 116 , and the first conductivity type semiconductor layer 116 . A second quantum wall 114BB disposed adjacent to the second conductivity type semiconductor layer 116 compared to the type semiconductor layer 112 may be included.

In addition, in the embodiment, the quantum well 114W includes a first quantum well 114WA disposed adjacent to the first conductivity type semiconductor layer 112 compared to the second conductivity type semiconductor layer 116 , and the first The second quantum well 114WB may be disposed adjacent to the second conductivity type semiconductor layer 116 compared to the conductivity type semiconductor layer 112 .

In an embodiment, the first quantum wall 114BA includes a first GaN barrier layer 114B1 , a second GaN barrier layer 114B3 , and between the first GaN barrier layer 114B1 and the second GaN barrier layer 114B3 . A second conductivity type Al _x Ga _1-x N barrier layer (0≤x<1) 114B2 interposed therebetween may be included.

In an embodiment, the first GaN barrier layer 114B1 and the second GaN barrier layer 114B3 may be an undoped GaN layer, but is not limited thereto, and the second conductivity type Al _x Ga _1-x N barrier layer ( 114B2) may be doped with a p-type dopant.

According to the embodiment, the first quantum wall 114BA disposed adjacent to the first conductivity type semiconductor layer 112 is a first GaN barrier layer 114B1 / a second conductivity type Al _x Ga _1-x N barrier layer ( 114B2)/second GaN barrier layer 114B3 structure, so that in addition to providing holes as carriers in the region of the second conductivity type semiconductor layer 116, the first conductivity type semiconductor layer 112 Since holes are also provided in the first quantum wall 114BA disposed adjacently, luminous recombination occurs in the quantum well 114W of the entire area of the active layer 114, thereby improving luminous efficiency.

Meanwhile, since the second conductivity type doping element implanted into the second conductivity type Al _x Ga _1-x N barrier layer 114B2 may also act as an impurity, when the doping level is high, after The quality of the formed active layer 114 may be reduced.

Accordingly, the second conductivity type Al _x Ga _1-x N barrier layer 114B2 may be doped with Mg as a p-type dopant at ^{a concentration of about 1X10 18} (atoms/cm ³ ) or less, but is not limited thereto. When the doping concentration of the p-type dopant in the second conductivity-type Al _x Ga _1-x ^{N barrier layer 114B2 exceeds 1X10 18} (atoms/cm ³ ), the quality of the active layer 114 may be deteriorated.

In the first embodiment, the _{composition (x) of Al in the second conductivity type Al x} Ga _1-x N barrier layer 114B2 may be in the range of more than 0% to 5% or less, and the second conductivity by Al The bandgap energy level of the type Al _x Ga _1-x N barrier layer 114B2 is set higher than that of the first GaN barrier 114B1 or the second GaN barrier 114B3, thereby causing electron overflow in the active layer region. By blocking the luminous intensity, the luminous intensity and the operating voltage characteristics can be improved as well as contributing to the luminous efficiency and improving the electrical characteristics.

On the other hand, when the _{composition (x) of Al in the second conductivity type Al x} Ga _1-x N barrier layer 114B2 exceeds 5%, the first quantum wall 114BA or a first quantum well formed thereafter ( 114WA), which may result in deterioration of the crystal quality, so it can be controlled below that.

Example In a first quantum wall (114BA) in the second conductivity-type Al _x Ga _1-x N barrier layer (114B2) occupied area can be less than about 20%, and the second conductivity-type Al _x Ga _1-x N The barrier layer 114B2 may be disposed to be adjacent to the first conductivity type semiconductor layer 112 rather than the second conductivity type semiconductor layer 116 .

For example, in the embodiment, _{the area occupied by the second conductivity type Al x} Ga _1-x N barrier layer 114B2 in the first quantum wall 114BA may be controlled to be about 5% to 20% or less, but is not limited thereto. it is not In order for the second conductivity type Al _x Ga _1-x N barrier layer 114B2 to function as a carrier injection layer and a tank blocking layer, the area occupied by the first quantum wall 114BA may be about 5% or more, but is not limited thereto. no.

_{When the area occupied by} the second conductivity type Al x Ga _1-x N barrier layer 114B2 exceeds 20% of the area of the first quantum wall 114BA, crystal quality may be deteriorated.

Alternatively _{, when the area occupied by the Al x} Ga _1-x N barrier layer 114B2 of the second conductivity type exceeds 20% of the area of the first quantum wall 114BA, the first quantum well 114WA of the second conductivity type dopant ), the quality of the quantum well may be deteriorated by diffusion.

For example, the thickness of the second conductivity-type Al _x Ga _1-x N barrier layer 114B2 may be 20% or less of the thickness of the first quantum wall 114BA, but is not limited thereto.

For example, when the thickness of the first quantum wall 114BA is about 5 nm, the thickness of the second conductivity type Al _x Ga _1-x N barrier layer 114B2 is about 1 nm or less, so that the second conductivity type Al _The area occupied by the x Ga _1-x N barrier layer 114B2 may be set to be less than or equal to 20% of the area of the first quantum wall 114BA.

_{According to the embodiment, by disposing the second conductivity type Al x} Ga _1-x N barrier layer 114B2 on the first quantum wall 114BA disposed adjacent to the first conductivity type semiconductor layer 112 , the second conductivity By injecting a hole into the first quantum well 114WA adjacent to the first conductivity-type semiconductor layer 112 while preventing quality deterioration due to the type doping element, the luminous intensity may be improved by improving the luminous recombination efficiency.

2B is an exemplary diagram of a bandgap diagram of a light emitting device according to a second embodiment.

The second embodiment may adopt the technical features of the first embodiment.

In the second embodiment, the second conductivity-type Al _x Ga _1-x N barrier layer (0≤x<1) may be the second conductivity-type GaN barrier layer 114B4. Accordingly, the first quantum wall 114BA disposed adjacent to the first conductivity-type semiconductor layer 112 is a first GaN barrier layer 114B1/second conductivity-type GaN barrier layer 114B4/second GaN barrier layer. It may be formed of a layer 114B3 structure.

The second conductivity-type GaN barrier layer 114B4 may have the same bandgap energy level as that of the first GaN barrier layer 114B1 or the second GaN barrier layer 114B3, but is not limited thereto.

According to the second embodiment, by disposing the second conductivity type GaN barrier layer 114B4 on the first quantum wall 114BA disposed adjacent to the first conductivity type semiconductor layer 112, the first conductivity type semiconductor layer ( By injecting a hole into the first quantum well 114WA adjacent to the 112 , the luminous intensity may be improved by improving the luminous recombination efficiency.

3 is luminous intensity (Po) data of a light emitting device according to an embodiment.

_{In the first embodiment, the second conductivity type Al x} Ga _1-x N barrier layer 114B2 is disposed on the first quantum wall 114BA disposed adjacent to the first conductivity type semiconductor layer 112 , and the second In the embodiment, the second conductivity type GaN barrier layer 114B4 is disposed on the first quantum wall 114BA disposed adjacent to the first conductivity type semiconductor layer 112 .

In FIG. 3 , the X-axis data is wavelength (nm) data, and the Y-axis data is light intensity (lm) data.

It was confirmed that the luminance data E1 of the first embodiment had an average value of about 96.29 lm, and the luminance data E2 of the second embodiment had an average value of about 95.42 lm.

It was confirmed that the luminance data of this example was improved by about 1.5% or more compared to the comparative example employing an undoped GaN barrier.

4 is an operating voltage (VF3) data of the light emitting device according to the embodiment.

_{In the first embodiment, the second conductivity type Al x} Ga _1-x N barrier layer 114B2 is disposed on the first quantum wall 114BA disposed adjacent to the first conductivity type semiconductor layer 112 , and the second In the embodiment, the second conductivity type GaN barrier layer 114B4 is disposed on the first quantum wall 114BA disposed adjacent to the first conductivity type semiconductor layer 112 .

In FIG. 4 , the Y-axis data (Data) is the operating voltage (V) data.

The operating voltage data E1 of the first embodiment has an average value of about 2.959V, and the operating voltage data E2 of the second embodiment has an average value of about 2.965V.

The operating voltage data of this example was measured at the same level as the operating voltage data of the comparative example employing the GaN barrier without doping under the condition that the luminance was improved by about 1.5% as described above.

In addition, in the case of the embodiment, it was confirmed that even when Mg was used as a dopant in the quantum wall, the low current characteristic due to deterioration of the quality of the active layer was maintained without deterioration.

5 is an exemplary diagram of a bandgap diagram of a light emitting device according to a third embodiment.

The third embodiment may adopt the technical features of the first embodiment or the second embodiment, and the main features of the third embodiment will be mainly described below.

The light emitting device according to the third embodiment may include a gallium nitride-based superlattice layer 113 disposed between the first conductivity-type semiconductor layer 112 and the first quantum wall 114BA.

According to the third embodiment, an efficient electron injection layer is provided by cooling electrons, which are hot carriers with high mobility, by the gallium nitride-based superlattice layer 113 provided in a plurality of steps. It is possible to provide a high-power light emitting device.

The gallium nitride-based superlattice layer 113 may include an In _x Ga _1-x N/GaN superlattice layer (however, 0<x<1), but is not limited thereto.

In an embodiment, the bandgap energy level of the gallium nitride-based superlattice layer 113 may be gradually lowered in the direction from the first conductivity type semiconductor layer 112 to the active layer 114 , and the bandgap energy level is the concentration of indium in each layer. Adjustment may be possible through control, but is not limited thereto.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 6 to 8 .

First, as shown in FIG. 6 , the substrate 105 may be prepared. The substrate 105 may be formed of a material having excellent thermal conductivity, and may be a conductive substrate or an insulating substrate.

For example, the substrate 105 may include at least one _{of GaAs, sapphire (Al 2} O ₃ ), SiC, Si, GaN, ZnO, GaP, InP, Ge, and Ga ₂ 0 _{3 .} The concave-convex structure P is formed on the substrate 105 to improve light extraction efficiency, but the concave-convex structure P is not essential. The substrate 105 may be wet-cleaned to remove impurities on the surface.

A buffer layer (not shown) may be formed on the substrate 105 . The buffer layer may relieve a lattice mismatch between the light emitting structure 110 and the substrate 105 to be formed later.

The buffer layer may be formed of at least one of a Group III-5 compound semiconductor, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, or AlInN. An undoped semiconductor layer (not shown) may be formed on the buffer layer, but is not limited thereto.

Thereafter, a light emitting structure 110 including a first conductivity type semiconductor layer 112 , an active layer 114 , and a second conductivity type semiconductor layer 116 may be formed on the substrate 105 or the buffer layer.

The first conductivity type semiconductor layer 112 may be implemented with a semiconductor compound, for example, a compound semiconductor such as a group 3-5 or group 2-6, and may be doped with a first conductivity type dopant.

For example, when the first conductivity-type semiconductor layer 112 is an n-type semiconductor layer, the n-type dopant may include Si, Ge, Sn, Se, and Te, but is not limited thereto.

The first conductivity type semiconductor layer 112 may include _{a semiconductor material having a composition formula of In x} Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). can

For example, the first conductivity type semiconductor layer 112 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, and InP. can be

The first conductivity type semiconductor layer 112 may be formed using a method such as chemical vapor deposition (CVD), molecular beam epitaxy (MBE), sputtering or hydroxide vapor phase epitaxy (HVPE), but is not limited thereto. .

Next, the active layer 114 may be formed on the first conductivity type semiconductor layer 112 .

In the active layer 114, electrons injected through the first conductivity-type semiconductor layer 112 and holes injected through the second conductivity-type semiconductor layer 116 formed later meet each other to form an energy band unique to the active layer (light emitting layer) material. A layer that emits light with an energy determined by

The active layer 114 may be formed of at least one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure.

The active layer 114 may include a quantum well 114W/quantum wall 114B structure. For example, the active layer 114 may be formed in a pair structure of any one or more of InGaN/GaN, InGaN/InGaN, GaN/AlGaN, InAlGaN/GaN, GaAs/AlGaAs, InGaP/AlGaP, GaP/AlGaP, but is limited thereto. doesn't happen

Hereinafter, the technical characteristics of the active layer according to the embodiment will be described in detail with reference to FIGS. 2A, 2B or 5 .

As shown in FIG. 2A , in the first embodiment, the quantum wall 114B includes a first quantum wall 114BA disposed adjacent to the first conductivity type semiconductor layer 112 and the second conductivity type semiconductor layer 116 . It may include a second quantum wall 114BB disposed adjacent to the.

In addition, in the embodiment, the quantum well 114W is a first quantum well 114WA disposed adjacent to the first conductivity type semiconductor layer 112 and disposed adjacent to the second conductivity type semiconductor layer 116 . A second quantum well 114WB may be included.

In an embodiment, the first quantum wall 114BA includes a first GaN barrier layer 114B1, a second conductivity type Al _x Ga _1-x N barrier layer (0≤x<1) 114B2, and a second GaN barrier layer. (114B3).

In an embodiment, the first GaN barrier layer 114B1 and the second GaN barrier layer 114B3 may be an undoped GaN layer.

According to the embodiment, the first quantum wall 114BA is formed in the structure of the first GaN barrier layer 114B1 / the second conductivity type Al _x Ga _1-x N barrier layer 114B2 / the second GaN barrier layer 114B3. By doing so, holes are also provided in the first quantum wall 114BA disposed adjacent to the first conductivity-type semiconductor layer 112, so that luminescence recombination occurs in the entire area of the active layer 114, thereby improving luminous efficiency. have.

In an embodiment, the second conductivity type Al _x Ga _1-x N barrier layer 114B2 may be doped with Mg as a p-type dopant at ^{a concentration of about 1X10 18} (atoms/cm ³ ) or less, but is not limited thereto. When the doping concentration of the p-type dopant in the second conductivity-type Al _x Ga _1-x ^{N barrier layer 114B2 exceeds 1X10 18} (atoms/cm ³ ), the quality of the active layer 114 may be deteriorated.

The composition (x) of Al in the second conductivity type Al _x Ga _1-x N barrier layer 114B2 may be set in the range of more than 0% to 5% or less, and Al _{x the second conductivity type Al x} The _{bandgap energy level of the Ga 1-x} N barrier layer 114B2 is set higher than that of the first GaN barrier 114B1 or the second GaN barrier 114B2 to block electron overflow in the active layer region. As well as contributing to luminous efficiency, electrical characteristics are improved, so that luminous intensity and operating voltage characteristics can be improved.

_{In an embodiment, the area occupied by the second conductivity type Al x} Ga _1-x N barrier layer 114B2 in the first quantum wall 114BA may be controlled to be about 20% or less, and the second conductivity type Al _x Ga _{1 The -x} N barrier layer 114B2 may be disposed to be adjacent to the first conductivity type semiconductor layer 112 rather than the second conductivity type semiconductor layer 116 . For example, in the embodiment, _{the area occupied by the second conductivity type Al x} Ga _1-x N barrier layer 114B2 in the first quantum wall 114BA may be controlled to be about 5% to 20% or less, but is not limited thereto. it is not

For example, the thickness of the second conductivity-type Al _x Ga _1-x N barrier layer 114B2 may be 20% or less of the thickness of the first quantum wall 114BA, but is not limited thereto.

For example, when the thickness of the first quantum wall 114BA is about 5 nm, the thickness of the second conductivity type Al _x Ga _1-x N barrier layer 114B2 may be about 1 nm, but is not limited thereto.

Next, as shown in FIG. 2B , in the second embodiment, the second conductivity type Al _x Ga _1-x N barrier layer (0≤x<1) may be the second conductivity type GaN barrier layer 114B4 .

Accordingly, the first quantum wall 114BA disposed adjacent to the first conductivity type semiconductor layer 112 may be formed by the first GaN barrier layer 114B1/the second conductivity type GaN barrier layer 114B4/the second GaN barrier layer. It may be formed of a layer 114B3 structure.

The second conductivity-type GaN barrier layer 114B4 may have the same bandgap energy level as that of the first GaN barrier layer 114B1 or the second GaN barrier layer 114B3, but is not limited thereto.

According to the second embodiment, by disposing the second conductivity type GaN barrier layer 114B4 on the first quantum wall 114BA disposed adjacent to the first conductivity type semiconductor layer 112, the first conductivity type semiconductor layer ( By injecting a hole into the first quantum well 114WA adjacent to the 112 , the luminous intensity may be improved by improving the luminous recombination efficiency.

Next, as shown in FIG. 5 , the light emitting device according to the third embodiment may include a gallium nitride-based superlattice layer 113 disposed between the first conductivity-type semiconductor layer 112 and the first quantum wall 114BA. can

The bandgap energy level of the gallium nitride-based superlattice layer 113 may be gradually lowered from the first conductivity type semiconductor layer 112 to the active layer 114 direction, and the bandgap energy level of each layer is the level of the well of each layer. It may be controlled by controlling the concentration of indium, but is not limited thereto.

According to the third embodiment, by the gallium nitride-based superlattice layer 113 disposed between the first conductivity type semiconductor layer 112 and the first quantum wall 114BA, electrons, which are hot carriers with high mobility, are absorbed. By cooling by the gallium nitride-based superlattice layer provided in a plurality of steps, it is possible to provide a high-power light emitting device having an efficient electron injection layer. The gallium nitride-based superlattice layer 113 may include an In _x Ga _1-x N/GaN superlattice layer (however, 0<x<1), but is not limited thereto.

Referring back to FIG. 6 , an electron blocking layer 118 is formed on the active layer 114 to serve as an electron blocking and a cladding (MQW cladding) of the active layer 114 to improve the luminous efficiency. can

For example, the electron blocking layer 118 may be formed of an Al _x In _y Ga _(1-xy) N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1) based semiconductor, and It may have a higher energy band gap than the energy band gap.

In an embodiment, the electron blocking layer 118 may effectively block electrons overflowing by implanting p-type ions, thereby increasing hole implantation efficiency.

Next, a second conductivity type semiconductor layer 116 may be formed on the electron blocking layer 118 .

The second conductivity type semiconductor layer 116 may be formed of a semiconductor compound. For example, the second conductivity-type semiconductor layer 116 may be implemented with a compound semiconductor such as Group III-5, Group II-6, or the like, and may be doped with a second conductivity-type dopant.

The second conductivity type semiconductor layer 116 is a group 3-group-5 compound semiconductor doped with a second conductivity type dopant, for example, In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1). , 0≤x+y≤1) may include a semiconductor material having a composition formula. When the second conductivity-type semiconductor layer 116 is a p-type semiconductor layer, the second conductivity-type dopant is a p-type dopant and may include Mg, Zn, Ca, Sr, Ba, or the like.

The second conductivity type semiconductor layer 116 is a bisethyl cycle containing trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and p-type impurities such as magnesium (Mg) in a chamber. Magnesium pentadienyl (EtCp ₂ Mg) {Mg(C ₂ H ₅ C ₅ H ₄ ) ₂ } may be implanted to form a p-type GaN layer, but is not limited thereto.

In an embodiment, the first conductivity-type semiconductor layer 112 may be an n-type semiconductor layer, and the second conductivity-type semiconductor layer 116 may be implemented as a p-type semiconductor layer, but is not limited thereto. In addition, a semiconductor having a polarity opposite to that of the second conductivity type, for example, an n-type semiconductor layer (not shown) may be formed on the second conductivity type semiconductor layer 116 . Accordingly, the light emitting structure 110 may be implemented as any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

Next, as shown in FIG. 7 , a component disposed on the upper side of the first conductivity type semiconductor layer 112 may be partially removed. Such a process may be performed by wet etching or dry etching, but is not limited thereto.

Thereafter, the current blocking layer 130 may be formed at a position where the second electrode 152 is to be formed.

The current blocking layer 130 may include a non-conductive region, a first conductive ion implantation layer, a first conductive diffusion layer, an insulating material, an amorphous region, and the like.

Next, the light-transmitting electrode layer 140 may be formed on the second conductivity-type semiconductor layer 116 on which the current blocking layer 130 is formed. The light-transmitting electrode layer 140 may include an ohmic layer, and may be formed by stacking a single metal, a metal alloy, or a metal oxide in multiple layers to efficiently inject holes.

For example, the light-transmitting electrode layer 140 may be formed of an excellent material that is in electrical contact with a semiconductor. For example, the light-transmitting electrode layer 140 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), or IGTO. (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt , Au, and may be formed including at least one of Hf, but is not limited to these materials.

Thereafter, the passivation layer 160 may be formed as an insulating layer or the like on the side surface of the light emitting structure 110 and a part of the light-transmitting electrode layer 140 . The passivation layer 160 may expose a region where the first electrode 151 is to be formed.

Next, as shown in FIG. 8 , a second electrode 152 is formed on the light-transmitting electrode layer 140 to overlap the current blocking layer 130 , and on the exposed first conductivity-type first semiconductor layer 112 . The light emitting device according to the embodiment may be manufactured by forming the first electrode 151 .

The first electrode 151 or the second electrode 152 may include titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), It may be formed of at least one of molybdenum (Mo), but is not limited thereto.

A plurality of light emitting devices according to the embodiment may be arrayed on a substrate in the form of a package, and optical members such as a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, etc. may be disposed on a path of light emitted from the light emitting device package.

9 is a view for explaining a light emitting device package 200 in which a light emitting device according to an embodiment is installed.

The light emitting device package 200 according to the embodiment includes a package body part 205 , a third electrode layer 213 and a fourth electrode layer 214 installed on the package body part 205 , and the package body part 205 . A molding member 230 provided in the light emitting device 100 and electrically connected to the third electrode layer 213 and the fourth electrode layer 214 and a phosphor 232 to surround the light emitting device 100 . may include.

The third electrode layer 213 and the fourth electrode layer 214 are electrically isolated from each other, and serve to provide power to the light emitting device 100 . In addition, the third electrode layer 213 and the fourth electrode layer 214 may serve to increase light efficiency by reflecting the light generated by the light emitting device 100 , and It can also serve to dissipate heat to the outside.

The light emitting device 100 may be electrically connected to the third electrode layer 213 and/or the fourth electrode layer 214 by any one of a wire method, a flip chip method, and a die bonding method.

The light emitting device according to the embodiment may be applied to a backlight unit, a lighting unit, a display device, an indicator device, a lamp, a street lamp, a vehicle lighting device, a vehicle display device, a smart watch, and the like, but is not limited thereto.

10 is an exploded perspective view of a lighting system according to an embodiment.

The lighting device according to the embodiment may include a cover 2100 , a light source module 2200 , a heat sink 2400 , a power supply unit 2600 , an inner case 2700 , and a socket 2800 . In addition, the lighting device according to the embodiment may further include any one or more of the member 2300 and the holder 2500 . The light source module 2200 may include a light emitting device or a light emitting device package according to an embodiment.

The light source module 2200 may include a light source unit 2210 , a connection plate 2230 , and a connector 2250 . The member 2300 is disposed on the upper surface of the heat sink 2400 and includes a plurality of light source units 2210 and guide grooves 2310 into which the connector 2250 is inserted.

The holder 2500 blocks the receiving groove 2719 of the insulating part 2710 of the inner case 2700 . Accordingly, the power supply unit 2600 accommodated in the insulating unit 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510 .

The power supply unit 2600 may include a protrusion part 2610 , a guide part 2630 , a base 2650 , and an extension part 2670 . The inner case 2700 may include a molding unit together with the power supply unit 2600 therein. The molding part is a part where the molding liquid is hardened, and allows the power supply unit 2600 to be fixed inside the inner case 2700 .

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by those of ordinary skill in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

In the above, the embodiment has been mainly described, but this is only an example and not limiting the embodiment, and those of ordinary skill in the art to which the embodiment pertains are provided with several examples not illustrated above in the range that does not depart from the essential characteristics of the embodiment It can be seen that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And differences related to such modifications and applications should be interpreted as being included in the scope of the embodiments set forth in the appended claims.

The first conductivity type semiconductor layer 112 , the quantum well 114W, the quantum wall 114B, the active layer 114 ,
a second conductivity-type semiconductor layer 116 , a first quantum wall 114BA, a second quantum wall 114BB;
A first GaN barrier layer 114B1, a second GaN barrier layer 114B3,
Second conductivity type Al _x Ga _1-x N barrier layer (0≤x<1) (114B2)

Claims (8)

a first conductivity type semiconductor layer;
an active layer disposed on the first conductivity-type semiconductor layer including a quantum well and a quantum wall; and
a second conductivity-type semiconductor layer disposed on the active layer;
The quantum wall is
a first quantum wall disposed adjacent to the first conductivity type semiconductor layer compared to the second conductivity type semiconductor layer;
and a second quantum wall disposed adjacent to the second conductivity type semiconductor layer compared to the first conductivity type semiconductor layer,
The first quantum wall is
A first GaN barrier layer, a second GaN barrier layer, and a second conductivity type Al _x Ga _1-x N barrier layer (0≤x<1) interposed between the first GaN barrier layer and the second GaN barrier layer including,
The first GaN barrier layer and the second GaN barrier layer include an undoped GaN layer,
The second conductivity type Al _x Ga _1-x N barrier layer is doped with a dopant,
A bandgap energy level of the second conductivity-type Al _x Ga _1-x N barrier layer is higher than that of the first GaN barrier layer or the second GaN barrier layer. According to claim 1,
The second conductivity type Al _x Ga _1-x N barrier layer is the second conductivity type Al _x Ga _1-x N barrier layer (0<x<1). 3. The method of claim 1 or 2,
The composition (x) of Al in the second conductivity type Al _x Ga _1-x N barrier layer is greater than 0% to 5% of the light emitting device. 4. The method of claim 3,
The thickness of the second conductivity-type Al _x Ga _1-x N barrier layer is greater than 0% to 20% or less of the thickness of the first quantum wall. delete delete delete delete

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