KR20170105942A - Light emitting device and lighting apparatus - Google Patents

Abstract

An embodiment of the present invention relates to a light emitting device, a manufacturing method thereof, a light emitting device package, and a lighting apparatus. The light emitting device according to an embodiment of the present invention includes a substrate, a buffer layer on the substrate, a first GaN-based superlattice layer including a first GaN layer and a first conductive type second GaN layer on the buffer layer, a second GaN-based superlattice layer including a third GaN layer and a first conductive type fourth GaN layer on the first GaN-based superlattice layer, a first conductive type semiconductor layer on the second GaN-based superlattice layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. Accordingly, the present invention can improve light extraction efficiency.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device,

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device.

A light emitting diode (LED) is one of light emitting devices that emit light when a current is applied, and can emit light with high efficiency at a low voltage, thus saving energy. In recent years, the problem of luminance of a light emitting diode has been greatly improved, and it has been applied to various devices such as a backlight unit of a liquid crystal display device, a display board, a display device, and a home appliance.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, a blue light emitting element, a green light emitting element, an ultraviolet (UV) light emitting element, and a red (RED) light emitting element using a nitride semiconductor are commercially available and widely used.

The light emitting device according to the prior art has a lateral type light emitting device in which an electrode layer is disposed in one direction of the epi layer and a vertical type light emitting device in which an electrode layer is disposed on a bottom surface and an upper surface of the epi layer.

In the conventional light emitting device, electrons injected from the n-type semiconductor layer and holes injected from the p-type semiconductor layer are recombined in the quantum well of the active layer, and light corresponding to the band gap energy of the quantum well is emitted.

On the other hand, in the prior art, the growth of a light emitting element is caused by the growth of an epitaxial layer of an n-type semiconductor layer, an active layer and a p-type semiconductor layer on a predetermined substrate. There is a problem that the light extraction efficiency is lowered.

In addition, according to the related art, a substrate grown by a difference in lattice constant between a substrate and an epitaxial layer is totally bent (bowing), and a round defect occurs in which growth quality in an outer region of the substrate is lowered, There is a problem that the output Po is lowered.

In addition, in the prior art, a predetermined light extraction pattern is formed on a substrate in order to improve the light extraction efficiency. However, the design of the light extraction pattern is limited by lowering the film quality of an epi- There was a limit to improve extraction efficiency.

Embodiments of the present invention provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device capable of improving a light extraction efficiency by eliminating defects generated when an epitaxial layer is grown on a substrate.

In addition, the embodiment can prevent a bowing phenomenon caused by a difference in lattice constant between a substrate and an epi layer, prevent a growth defect in an outer region of a substrate, improve a light output Po, A manufacturing method of a device, a light emitting device package, and a lighting device.

In addition, the embodiment can also be applied to a light emitting device which is designed to efficiently extract light extraction pattern on a substrate, while blocking transmission of defects or dislocations to the light emitting structure layer, , A light emitting device package, and a lighting device.

A light emitting device according to an embodiment includes a substrate, a buffer layer on the substrate, a first GaN superlattice layer including a first GaN layer and a first conductive type second GaN layer on the buffer layer, A second GaN-based superlattice layer 106 including a third GaN layer and a first conductive-type fourth GaN layer on the first superlattice layer and a second superlattice layer on the second superlattice layer, And an active layer on the first conductive type semiconductor layer and a second conductive type semiconductor layer on the active layer.

The light emitting device according to the embodiment may further include a substrate including a protruding pattern, a buffer layer on the protruded pattern, and a first GaN superlattice layer including a first GaN layer and a first conductive type second GaN layer on the buffer layer. Layer, a first conductive semiconductor layer on the first GaN-based superlattice layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.

The lighting apparatus according to the embodiment may include a light emitting unit having the light emitting element.

Embodiments can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device capable of improving a light extraction efficiency by eliminating defects generated when an epitaxial layer is grown on a substrate.

In addition, the embodiment can prevent a bowing phenomenon caused by a difference in lattice constant between a substrate and an epi layer, prevent a growth defect in an outer region of a substrate, improve a light output Po, A device manufacturing method, a light emitting device package, and a lighting device can be provided.

In addition, the embodiment can also be applied to a light emitting device which is designed to efficiently extract light extraction pattern on a substrate, while blocking transmission of defects or dislocations to the light emitting structure layer, , A light emitting device package, and a lighting device.

1 is a sectional view of a light emitting device according to a first embodiment;
2 and 4 are characteristic data of the light emitting device according to the embodiment.
3 is a characteristic data of a light emitting device according to the prior art.
5 is a sectional view of a light emitting device according to a second embodiment;
6 to 8 are cross-sectional views illustrating a manufacturing process of a light emitting device according to an embodiment.
9 is a sectional view of a light emitting device package according to an embodiment.
10 is a perspective view of a lighting apparatus according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

(Example)

1 is a cross-sectional view of a light emitting device 100 according to a first embodiment. FIG. 1 is a cross-sectional view of a horizontal light emitting device, but the embodiment is not limited thereto, and embodiments can be applied to light emitting devices having various structures such as a vertical light emitting device.

1, a light emitting device 100 according to an embodiment includes a substrate 105, a buffer layer 103, a first GaN-based superlattice layer 104, an InN layer 107, a second GaN- At least one of the light emitting structure layer 106, the light emitting structure layer 110, the current diffusion layer 130, the light transmitting electrode layer 140, the passivation layer 160, the first electrode 151 and the second electrode 152 have.

The first GaN-based superlattice layer 104 may include a first GaN layer 104a and a first conductive type second GaN layer 104b on the buffer layer 103, and the second GaN- The lattice layer 106 may include a third GaN layer 106a and a first conductive type fourth GaN layer 106b on the first GaN-based superlattice layer 104. The light emitting structure layer 110 may include a first conductive semiconductor layer 112, an active layer 114, and a second conductive semiconductor layer 116, but the present invention is not limited thereto.

For example, the light emitting device 101 according to the first embodiment includes a substrate 105, a buffer layer 103 on the substrate 105, a first GaN layer 104a on the buffer layer 103, A first GaN-based superlattice layer 104 including a first conductivity type second GaN layer 104b; a third GaN-based superlattice layer 104 on which a third GaN layer 106a and a first A second GaN-based superlattice layer 106 including a fourth GaN-based fourth superlattice layer 106b, a first conductive semiconductor layer 112 on the second GaN-based superlattice layer 106, An active layer 114 may be formed on the conductive type semiconductor layer 112 and a second conductive type semiconductor layer 116 may be formed on the active layer 114.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting device and a lighting device capable of improving a light extraction efficiency by eliminating defects generated when an epitaxial layer is grown on a substrate.

Further, the technical problem of the embodiments is to provide a light emitting device capable of preventing a bowing phenomenon caused by a difference in lattice constant between a substrate and an epi layer, preventing a growth defect in an outer region of a substrate, And a lighting device.

The light emitting device according to the embodiment includes the first GaN superlattice layer 104 including the first GaN layer 104a and the first conductivity type second GaN layer 104b on the buffer layer 103, It is possible to improve the yield in the substrate by improving the bowing of the substrate together with improvement of the dislocations D coming from the substrate 105 and improve the internal light emitting efficiency IQE to improve the light output Po .

2 is optical output (Po) data according to the wavelengths of the light emitting device and the comparative example according to the embodiment.

The light output data E according to the embodiment is remarkably increased by about 5 mW or more as compared with the light output data R according to the comparison.

3 is Vf1 data of the light emitting device according to the comparative example, and Fig. 4 is Vf1 data of the light emitting device according to the embodiment.

According to the comparative example, there are many data values near 2.00, where Vf1 (low current characteristic) is bad. This is due to poor epitaxial growth and failure to properly dislocate, resulting in round defects.

On the other hand, according to the embodiment as shown in FIG. 4, it can be seen that the low current characteristic is greatly improved as the data of Vf1 is good and the data of 2.3 or more is large.

Thus, according to the embodiment, the first GaN layer 104a and the first conductive type second GaN layer 104b are modulated to effectively block the dislocations generated on the substrate, quality can be improved to improve round defects and bowing of the substrate can be improved.

Referring to FIG. 1, the thickness of the first conductive type second GaN layer 104b of the embodiment is set to be larger than the thickness of the first GaN layer 104a, thereby dislocating the first GaN layer 104a The first conductive type second GaN layer 104b has a unique effect of improving bow quality while improving the quality of the film quality.

For example, the first conductive type second GaN layer 104b may have a thickness of about 4 nm to 7 nm. If the thickness is less than 4 nm, the film quality may deteriorate. If the thickness is more than 7 nm, . In addition, the first GaN layer 104a may have a thickness of about 2 nm to 3 nm. If the thickness of the first GaN layer 104a is less than 2 nm, the function of blocking the potential may be reduced, and if it is more than 3 nm, the function of the superlattice layer may be weakened.

Also, in the embodiment, the concentration of the first conductive type dopant of the first conductive type second GaN layer 104b is set to be higher than the concentration of the first conductive type dopant of the first GaN layer 104a, Type second GaN layer 104b improves the carrier injection efficiency of the first dopant and controls the doping concentration of the first conductivity type dopant in the first GaN layer 104a to maintain the quality of the film quality, The warping phenomenon of the substrate can be improved.

For example, the concentration of the first conductivity type dopant of the first conductive type second GaN layer 104b may have a concentration of about 5 × 10 ¹⁸ to 8 × ^{10 18} atoms / cm ³ , The injection efficiency may be lowered, and if the upper limit is exceeded, the film quality may be lowered.

Also, the concentration of the first conductive dopant in the first GaN layer 104a may have a concentration of about 1 × ^{10 18} to 4 × 10 ¹⁸ atoms / cm ³ , and when less than the lower limit, the carrier injection efficiency may be lowered If the upper limit is exceeded, the film quality may be lowered.

In addition, according to the embodiment, the InN layer 107 is formed on the first GaN superlattice layer 104 to block dislocations or the like not blocked by the first GaN superlattice layer 104, it is possible to improve quality and bowing phenomenon.

For example, in the InN layer 107, indium (In) is located at a dislocation site, thereby potentially increasing the crystal quality by filling the dislocation.

The thickness of the InN layer 107 may be about 4 nm to 6 nm. If the thickness is less than 4 nm, the disconnection blocking effect may be weakened. If the thickness is more than 6 m, the film quality may decrease or the carrier injection efficiency may deteriorate.

Also, the embodiment may include a second GaN-based superlattice layer 106 on the first GaN-based superlattice layer 104 or the InN layer 107. For example, the second GaN-based superlattice layer 106 may include a third GaN layer 106a and a first conductive type fourth GaN layer 106b on the InN layer 107.

According to the embodiment, the second GaN-based superlattice layer 106 is formed on the first GaN-based superlattice layer 104 or the InN layer 107 to alleviate the warping of the substrate, Can be improved.

For example, the thickness of the first conductive type fourth GaN layer 106b may be about 4 nm to 7 nm. If the thickness is less than 4 nm, the film quality may be deteriorated. If the thickness is more than 7 nm, . The third GaN layer 106a may have a thickness of about 3 nm to 6 nm. If the thickness of the third GaN layer 106a is less than 3 nm, the function of disconnection blocking may be reduced. If the thickness of the third GaN layer 106 is more than 6 nm, the function of the superlattice layer may be weakened.

5 is a sectional view of the light emitting device 102 according to the second embodiment.

The light emitting device 102 according to the second embodiment includes a substrate 105 including a protruding pattern P, a buffer layer 103 on the protruding pattern P, a first GaN A first GaN-based superlattice layer 104 including a first GaN-based superlattice layer 104a and a first conductive-type second GaN layer 104b; And a second conductive semiconductor layer 116 on the active layer 114 and the active layer 114 on the first conductive semiconductor layer 112.

The second embodiment can employ the technical features of the first embodiment.

For example, the embodiment may include a second GaN-based superlattice layer (a second GaN-based superlattice layer) including a third GaN layer 106a and a first conductive type fourth GaN layer 106b on the first GaN- 106).

The thickness of the first conductive type second GaN layer 104b may be greater than the thickness of the first GaN layer 104a. The concentration of the first conductive dopant of the first conductive type second GaN layer 104b may be higher than the concentration of the first conductive type dopant of the first GaN layer 104a. The embodiment may further include an InN layer 107 between the first GaN-based superlattice layer 104 and the second GaN-based superlattice layer 106.

Hereinafter, the main technical features of the second embodiment will be mainly described.

The present invention also provides a light emitting device and a lighting device having excellent light emitting efficiency and excellent external light emitting efficiency by designing the light extracting pattern on the substrate to effectively perform light extraction while blocking transmission of defects or dislocations to the light emitting structure layer I want to.

The light emitting device 102 according to the second embodiment includes a substrate 105 including a protruding pattern P, a buffer layer 103 on the protruding pattern P, a first GaN And a first GaN-based superlattice layer 104 including a first conductive type second GaN layer 104a and a first conductive type second GaN layer 104b.

In the prior art, the height of the light extracting pattern formed on the substrate, for example, the PSS pattern, is not large compared to the width of the bottom surface, which has limitations in light extraction.

Referring to FIG. 5, the height H of the protruding pattern P in the embodiment is set to be larger than the width W of the bottom surface, so that the external light extraction efficiency can be remarkably improved.

For example, the height H of the protruding pattern P can be formed in the range of about 1.5 to 3.0 times the width W of the bottom surface, so that the external light extraction efficiency can be remarkably improved, The first GaN superlattice layer 104 including the first GaN layer 104a and the first conductive type second GaN layer 104b is formed on the substrate P to prevent the substrate from being warped, Thereby improving the film quality and improving the light extraction efficiency at the same time, thereby significantly improving the light output Po. If the height H of the protruding pattern P is less than 1.5 times the width W of the bottom surface, the light extraction effect may be weak. If the height H is 3.0 times or more, the occurrence of dislocation may be excessive.

Embodiments can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device capable of improving a light extraction efficiency by eliminating defects generated when an epitaxial layer is grown on a substrate.

In addition, the embodiment can prevent a bowing phenomenon caused by a difference in lattice constant between a substrate and an epi layer, prevent a growth defect in an outer region of a substrate, improve a light output Po, A device manufacturing method, a light emitting device package, and a lighting device can be provided.

In addition, the embodiment can also be applied to a light emitting device which is designed to efficiently extract light extraction pattern on a substrate, while blocking transmission of defects or dislocations to the light emitting structure layer, , A light emitting device package, and a lighting device.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 6 to 8. FIG. The following description will be made with reference to Fig. 1, but the manufacturing method of the embodiment is not limited thereto.

First, a substrate 105 may be prepared as shown in FIG. The substrate 105 may be formed of a material having excellent thermal conductivity, and may be a conductive substrate or an insulating substrate. For example, the substrate 105 is GaAs, sapphire (Al ₂ O _3), SiC, Si, GaN, ZnO, GaP, InP, Ge, and Ga ₂ 0 ₃ May be used.

According to the embodiment, the protruding pattern P may be formed on the substrate 105 as shown in Fig. In the embodiment, the height H of the protruding pattern P is set to be larger than the width W of the bottom surface, so that the external light extraction efficiency can be remarkably improved. For example, the height H of the protruding pattern P can be formed in the range of about 1.5 to 3.0 times the width W of the bottom surface, so that the external light extraction efficiency can be remarkably improved, The first GaN superlattice layer 104 including the first GaN layer 104a and the first conductive type second GaN layer 104b is formed on the substrate P to prevent the substrate from being warped, Thereby improving the film quality and improving the light extraction efficiency at the same time, thereby significantly improving the light output Po.

Next, a buffer layer 103 may be formed on the substrate 105. The buffer layer 103 may mitigate lattice mismatching between the light emitting structure layer 110 and the substrate 105 to be formed later. The buffer layer 103 may be formed of at least one of Group III-V compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN.

Next, a first GaN-based superlattice layer 104 may be formed on the buffer layer 103. The first GaN-based superlattice layer 104 may include a first GaN layer 104a and a first conductive type second GaN layer 104b on the buffer layer 103.

The light emitting device according to the embodiment includes the first GaN superlattice layer 104 including the first GaN layer 104a and the first conductivity type second GaN layer 104b on the buffer layer 103, It is possible to improve the yield in the substrate by improving the bowing of the substrate together with improvement of the dislocations D coming from the substrate 105 and improve the internal light emitting efficiency IQE to improve the light output Po .

According to the embodiment, by modulating the first GaN layer 104a and the first conductive type second GaN layer 104b, the dislocation generated on the substrate is efficiently blocked, ) Can be improved to improve round defects, and the bowing of the substrate can be improved.

Also, in the embodiment, the concentration of the first conductive type dopant of the first conductive type second GaN layer 104b is set to be higher than the concentration of the first conductive type dopant of the first GaN layer 104a, Type second GaN layer 104b improves the carrier injection efficiency of the first dopant and controls the doping concentration of the first conductivity type dopant in the first GaN layer 104a to maintain the quality of the film quality, The warping phenomenon of the substrate can be improved.

For example, the concentration of the first conductivity type dopant of the first conductive type second GaN layer 104b may have a concentration of about 5 × 10 ¹⁸ to 8 × ^{10 18} atoms / cm ³ , The injection efficiency may be lowered, and if the upper limit is exceeded, the film quality may be lowered.

Also, the concentration of the first conductive dopant in the first GaN layer 104a may have a concentration of about 1 × ^{10 18} to 4 × 10 ¹⁸ atoms / cm ³ , and when less than the lower limit, the carrier injection efficiency may be lowered If the upper limit is exceeded, the film quality may be lowered.

According to the embodiment, the thickness of the first conductive type second GaN layer 104b is set larger than the thickness of the first GaN layer 104a, thereby preventing dislocation in the first GaN layer 104a The first conductive type second GaN layer 104b has a unique effect of improving bow quality while improving the quality of the film quality.

For example, the first conductive type second GaN layer 104b may have a thickness of about 4 nm to 7 nm. If the thickness is less than 4 nm, the film quality may deteriorate. If the thickness is more than 7 nm, . In addition, the first GaN layer 104a may have a thickness of about 2 nm to 3 nm. If the thickness of the first GaN layer 104a is less than 2 nm, the function of blocking the potential may be reduced, and if it is more than 3 nm, the function of the superlattice layer may be weakened.

Next, according to the embodiment, an InN layer 107 is formed on the first GaN-based superlattice layer 104 to block dislocations or the like not filtered by the first GaN-based superlattice layer 104, The quality and the bowing phenomenon can be improved. For example, in the InN layer 107, indium (In) is located at a dislocation site, thereby enhancing the crystal quality and significantly increasing the crystal quality.

The thickness of the InN layer 107 may be about 4 nm to 6 nm. If the thickness is less than 4 nm, the disconnection blocking effect may be weakened. If the thickness is more than 6 m, the film quality may decrease or the carrier injection efficiency may deteriorate.

Next, in the embodiment, a second GaN-based superlattice layer 106 may be formed on the InN layer 107. For example, the second GaN-based superlattice layer 106 may include a third GaN layer 106a and a first conductive type fourth GaN layer 106b on the InN layer 107.

According to the embodiment, the second GaN-based superlattice layer 106 is formed on the first GaN-based superlattice layer 104 or the InN layer 107 to alleviate the warping of the substrate, Can be improved.

For example, the thickness of the first conductive type fourth GaN layer 106b may be about 4 nm to 7 nm. If the thickness is less than 4 nm, the film quality may be deteriorated. If the thickness is more than 7 nm, . The third GaN layer 106a may have a thickness of about 3 nm to 6 nm. If the thickness of the third GaN layer 106a is less than 3 nm, the function of disconnection blocking may be reduced. If the thickness of the third GaN layer 106 is more than 6 nm, the function of the superlattice layer may be weakened.

Next, a light emitting structure layer 110 including a first conductive semiconductor layer 112, an active layer 114, and a second conductive semiconductor layer 116 is formed on the second GaN-based superlattice layer 106 .

The first conductive semiconductor layer 112 may be formed of a compound semiconductor such as a Group 3-Group-5, Group-6, or the like, and may be doped with a first conductive dopant.

For example, when the first conductive semiconductor layer 112 is an n-type semiconductor layer, the n-type dopant may include Si, Ge, Sn, Se, and Te.

The first conductive semiconductor layer 112 may include a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + . For example, the first conductive semiconductor layer 112 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, .

The first conductive semiconductor layer 112 may be formed using a chemical vapor deposition (CVD) method, a molecular beam epitaxy (MBE) method, a sputtering method, or a vapor phase epitaxy (HVPE) method. .

Next, the active layer 114 may be formed on the first conductivity type semiconductor layer 112.

Electrons injected through the first conductive type semiconductor layer 112 and holes injected through the second conductive type semiconductor layer 116 formed after the first and second conductive type semiconductor layers 116 and 116 are mutually combined to form an energy band unique to the active layer Which emits light having an energy determined by < RTI ID = 0.0 >

The active layer 114 may be formed of at least one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure.

The active layer 114 may include a quantum well / quantum wall structure. For example, the active layer 114 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs / AlGaAs, InGaP / AlGaP and GaP / AlGaP. It does not.

Next, an electron blocking layer 118 is formed on the active layer 114 to serve as electron blocking and cladding of the active layer 114, thereby improving the luminous efficiency. For example, the electron blocking layer 118 may be formed of a semiconductor of Al _x In _y Ga _(1-xy) N (0? _{X ? 1, 0? Y ? 1} ) It can have an energy band gap higher than the energy band gap. In the embodiment, the electron blocking layer 118 can effectively block the electrons that are ion-implanted into the p-type and overflow, and increase the hole injection efficiency.

Next, a second conductive semiconductor layer 116 may be formed on the electron blocking layer 118.

The second conductive semiconductor layer 116 may be formed of a semiconductor compound. For example, the second conductive semiconductor layer 116 may be formed of a compound semiconductor such as a Group III-V, a Group II-VI, or the like, and may be doped with a second conductive dopant.

The second conductive semiconductor layer 116 may be a Group III-V compound semiconductor doped with a second conductive dopant, for example, In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y 1, 0? X + y? 1). When the second conductive semiconductor layer 116 is a p-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as p-type dopants.

The second conductive type semiconductor layer 116 is Bisei that the chamber comprises a p-type impurity such as trimethyl gallium gas (TMGa), ammonia gas (NH _3), nitrogen gas (N _2), and magnesium (Mg) butyl bicyclo The p-type GaN layer may be formed by implanting pentadienyl magnesium (EtCp ₂ Mg) {Mg (C ₂ H ₅ C ₅ H ₄ ) ₂ }, but the present invention is not limited thereto.

In an embodiment, the first conductive semiconductor layer 112 may be an n-type semiconductor layer, and the second conductive semiconductor layer 116 may be a p-type semiconductor layer. Also, on the second conductive semiconductor layer 116, a semiconductor (e.g., an n-type semiconductor) (not shown) having a polarity opposite to that of the second conductive type may be formed. Accordingly, the light emitting structure layer 110 may have any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

Next, as shown in FIG. 7, a part of the upper conductive semiconductor layer 112 may be partially removed so that the first conductive semiconductor layer 112 is partially exposed. Such a process may be performed by wet etching or dry etching, but is not limited thereto.

Thereafter, the current blocking layer 130 may be formed at a position where the second electrode 152 is to be formed. The current blocking layer 130 may include a non-conductive region, a first conductive type ion-implanted layer, a first conductive type diffusion layer, an insulator, an amorphous region, and the like.

Next, the light-transmitting electrode layer 140 may be formed on the second conductivity type semiconductor layer 116 on which the current blocking layer 130 is formed. The transmissive electrode layer 140 may include an ohmic layer and may be formed by laminating a single metal, a metal alloy, or a metal oxide so as to efficiently inject holes.

For example, the light transmitting electrode layer 140 may be formed of a superior material in electrical contact with a semiconductor. For example, the light transmitting electrode layer 140 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (ZnO), indium gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON nitride, AGZO Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Ni, IrOx / Au, and Ni / IrOx / , Au, and Hf, and is not limited to such a material.

Thereafter, the passivation layer 160 may be formed on the side of the light emitting structure layer 110 and a part of the light transmitting electrode layer 140 with an insulating layer or the like. The passivation layer 160 may expose a region where the first electrode 151 is to be formed.

Next, as shown in FIG. 8, a second electrode 152 is formed on the light-transmitting electrode layer 140 so as to overlap with the current blocking layer 130, and a second electrode 152 is formed on the exposed first conductive semiconductor layer 112 The first electrode 151 may be formed to manufacture the light emitting device according to the embodiment.

The first electrode 151 or the second electrode 152 may be formed of one selected from the group consisting of Ti, Cr, Ni, Al, Pt, Au, Molybdenum (Mo), but the present invention is not limited thereto.

A plurality of light emitting devices according to the embodiments may be arrayed on a substrate in the form of a package, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, and the like may be disposed on a path of light emitted from the light emitting device package.

9 is a view illustrating a light emitting device package 200 provided with a light emitting device according to an embodiment.

The light emitting device package 200 according to the embodiment includes a package body 205, a third electrode layer 213 and a fourth electrode layer 214 provided on the package body 205, a package body 205, A light emitting device 100 disposed on the first electrode layer 213 and electrically connected to the third electrode layer 213 and the fourth electrode layer 214 and a molding member 230 surrounding the light emitting device 100, . ≪ / RTI >

The third electrode layer 213 and the fourth electrode layer 214 are electrically isolated from each other and provide power to the light emitting device 100. The third electrode layer 213 and the fourth electrode layer 214 may function to increase light efficiency by reflecting the light generated from the light emitting device 100, And may serve to discharge heat to the outside.

The light emitting device 100 may be electrically connected to the third electrode layer 213 and / or the fourth electrode layer 214 by a wire, flip chip, or die bonding method.

The light emitting device according to the embodiment may be applied to a backlight unit, a lighting unit, a display device, a pointing device, a lamp, a streetlight, a vehicle lighting device, a vehicle display device, a smart watch, but is not limited thereto.

10 is an exploded perspective view of an illumination system according to an embodiment.

The lighting apparatus according to the embodiment may include a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device or a light emitting device package according to the embodiment.

The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250. The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670. The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

The substrate 105, the buffer layer 103,
The first GaN-based superlattice layer 104, the first GaN layer 104a, the first conductivity-type second GaN layer 104b,
The second GaN-based superlattice layer 106, the third GaN layer 106a, the first conductive type fourth GaN layer 106b,
The light emitting structure layer 110, the first conductivity type semiconductor layer 112, the active layer 114, the second conductivity type semiconductor layer 116,
The InN layer 107, the current diffusion layer 130, the light-transmitting electrode layer 140, the passivation layer 160,
The first electrode 151, the second electrode 152,

Claims (12)

Board;
A buffer layer on the substrate;
A first GaN superlattice layer including a first GaN layer and a first conductive type second GaN layer on the buffer layer;
A second GaN-based superlattice layer including a third GaN layer and a first conductive type fourth GaN layer on the first GaN-based superlattice layer;
A first conductive semiconductor layer on the second GaN-based superlattice layer;
An active layer on the first conductive semiconductor layer; And
And a second conductive semiconductor layer on the active layer. The method according to claim 1,
The concentration of the first conductivity type dopant of the first conductive type second GaN layer is
The concentration of the first conductivity type dopant of the first GaN layer is higher than that of the first conductivity type dopant of the first GaN layer. The method according to claim 1,
And an InN layer between the first GaN-based superlattice layer and the second GaN-based superlattice layer. The method according to claim 1,
The thickness of the first conductive type second GaN layer is
Wherein the first GaN layer is thicker than the first GaN layer. 5. The method of claim 4,
The thickness of the first conductive type second GaN layer is 4 nm to 7 nm,
And the thickness of the first GaN layer is 2 nm to 3 nm.
A substrate comprising a protruding pattern;
A buffer layer on the protruding pattern;
A first GaN superlattice layer including a first GaN layer and a first conductive type second GaN layer on the buffer layer;
A first conductive semiconductor layer on the first GaN-based superlattice layer;
An active layer on the first conductive semiconductor layer; And
And a second conductive semiconductor layer on the active layer. The method according to claim 6,
And the height of the protruding pattern is larger than the width of the bottom face. The method according to claim 6,
And a second GaN-based superlattice layer including a third GaN layer and a first conductive type fourth GaN layer on the first GaN-based superlattice layer. The method according to claim 6,
The thickness of the first conductive type second GaN layer is
Wherein the first GaN layer is thicker than the first GaN layer. The method according to claim 6,
The concentration of the first conductivity type dopant of the first conductive type second GaN layer is
The concentration of the first conductivity type dopant of the first GaN layer is higher than that of the first conductivity type dopant of the first GaN layer. 9. The method of claim 8,
And an InN layer between the first GaN-based superlattice layer and the second GaN-based superlattice layer. A lighting device comprising a light-emitting unit comprising a light-emitting element according to any one of claims 1 to 11.

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