KR101886153B1 - Light emitting device - Google Patents

Abstract

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.
A light emitting device according to an embodiment includes a substrate; A first conductive semiconductor layer on the substrate; An active layer on the first conductive semiconductor layer; A second conductive semiconductor layer on the active layer; A transparent electrode layer which is disposed on a bottom surface and a side surface of the substrate and is electrically connected to the first conductivity type semiconductor layer; And a second electrode on the second conductive semiconductor layer.

Description

[0001] LIGHT EMITTING DEVICE [0002]

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

A light emitting device is a device in which electric energy is converted into light energy. For example, various colors can be realized by controlling a composition ratio of a compound semiconductor.

When a forward voltage is applied to a light emitting device, the electrons in the n-layer and the holes in the p-layer are coupled to emit energy corresponding to the energy gap between the conduction band and the valance band. It emits mainly in the form of heat or light, and emits in the form of light.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, and the like using nitride semiconductors have been commercialized and widely used.

The nitride semiconductor light emitting device according to the related art includes a nitride semiconductor layer which is chemically deposited on a sapphire substrate which is a heterogeneous substrate.

Since the sapphire substrate has an electrically insulating property, it is necessary to partially etch the nitride semiconductor layer or to remove the sapphire substrate in order to apply power to the nitride semiconductor layer.

The nitride semiconductor light emitting device can be classified into a lateral type and a vertical type depending on the position of the electrode layer.

A horizontal type nitride semiconductor light emitting device is formed such that a nitride semiconductor layer is formed on a sapphire substrate and two electrode layers are disposed on the upper side of the nitride semiconductor layer.

For example, in the case of a horizontal light emitting device according to the related art, after the epi process is completed, the n-electrode is deposited by etching the p-GaN and the active layer. When the above process is performed, there is a problem that the active layer region which can substantially emit light is reduced, and the luminous area is reduced due to the upper n-electrode, thereby reducing the luminous flux.

Embodiments provide a light emitting device capable of increasing light flux, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

A light emitting device according to an embodiment includes a substrate; A first conductive semiconductor layer on the substrate; An active layer on the first conductive semiconductor layer; A second conductive semiconductor layer on the active layer; A transparent electrode layer disposed on the bottom and side surfaces of the substrate and electrically connected to the first conductive semiconductor layer; And a second electrode on the second conductive semiconductor layer.

According to the light emitting device, the light emitting device manufacturing method, the light emitting device package, and the illumination system according to the embodiment, the light emitting area can be increased to increase the light flux.

1 is a sectional view of a light emitting device according to a first embodiment;
2 is a cross-sectional view of a light emitting device according to a second embodiment;
3 is a cross-sectional view of a light emitting device according to a third embodiment.
4 is a cross-sectional view of a light emitting device according to a fourth embodiment.
5 is a cross-sectional view of a light emitting device according to a fifth embodiment.
6 to 8 are process sectional views of a light emitting device according to an embodiment.
9 is a sectional view of a light emitting device package according to an embodiment.
10 is a perspective view of a lighting unit according to an embodiment;
11 is a perspective view of a backlight unit according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

(Example)

1 is a cross-sectional view of a light emitting device 100 according to a first embodiment.

The light emitting device 100 according to the embodiment includes a substrate 106, a first conductive semiconductor layer 112 on the substrate 106, an active layer 114 on the first conductive semiconductor layer 112, A second conductive semiconductor layer 116 formed on the active layer 114 and a light transmitting electrode layer 114 formed on the bottom and side surfaces of the substrate 106 and electrically connected to the first conductive semiconductor layer 112, And a second electrode 132 on the first conductive semiconductor layer 150 and the second conductive semiconductor layer 116.

The embodiment may include a first electrode 131 formed on the transparent electrode layer 150. For example, the first electrode 131 may be formed on the bottom surface of the transparent electrode layer 150.

The embodiment further includes a passivation layer 140 formed on the side surfaces of the active layer 114 and the second conductivity type semiconductor layer 116 to form the passivation layer 150 and the active layer 114, Type semiconductor layer 116 can be electrically isolated to prevent short-circuiting.

The second electrode 132 may be formed after the ohmic layer 120 is formed on the second conductive semiconductor layer 116 to increase the carrier injection.

In addition, in the embodiment, the current blocking layer 135 may be formed under the second electrode 132 to increase the light efficiency by current diffusion.

According to the light emitting device according to the embodiment, by forming the light transmitting electrode layer 150 formed on the bottom and side surfaces of the substrate 106 and electrically connected to the first conductive semiconductor layer 112, the light emitting area can be increased, Can be increased.

A horizontal type light emitting device according to the prior art is formed such that a nitride semiconductor layer is formed on a sapphire substrate and two electrode layers are arranged on the upper side of the nitride semiconductor layer. For example, in the case of a horizontal light emitting device according to the related art, after the epi process is completed, the n-electrode is deposited by etching the p-GaN and the active layer. When the above process is performed, there is a problem that the active layer region which can substantially emit light is reduced, and the luminous area is reduced due to the upper n-electrode, thereby reducing the luminous flux.

In addition, according to the prior art, light absorption occurs at the n-electrode, causing loss of light quantity.

The light emitting device according to the embodiment does not etch to form the n-electrode, and unlike the vertical light emitting device, the substrate is not removed, thereby maximizing the area of the active layer as the light emitting layer.

In addition, according to the embodiment, the first electrode 131 electrically connected to the first conductivity type semiconductor layer is formed on the lower side of the light emitting device chip, thereby solving the problem that light is absorbed from the n electrode on the upper side of the chip.

In addition, according to the embodiment, since the first electrode, for example, the n-electrode is not separately fabricated, an electrode is formed on the package body so that the light emitting device chip can be mounted and used. Can be solved.

In addition, according to the embodiment, the light transmitting electrode layer 150 is formed on the side surfaces of the substrate 106 and the first conductivity type semiconductor layer 112, so that the light emitted to the side can be extracted more efficiently.

According to the light emitting device according to the embodiment, the luminous area can be increased and the luminous flux can be increased.

2 is a sectional view of the light emitting device 102 according to the second embodiment.

The second embodiment can employ the technical features of the first embodiment.

The second embodiment may further include a reflective layer 160 formed below the transmissive electrode layer 150 to reflect light toward the bottom surface of the substrate 106 to the side or top to increase the light extraction efficiency.

The reflective layer 160 may be formed to have a width equal to or larger than the horizontal width of the first electrode 131b, and may reflect light to the side or top surface of the light emitted downward to enhance light extraction efficiency.

In addition, the reflective layer 160 may be formed to have an area larger than the area of the first electrode 131b, and may reflect light to the side or top surface of the light emitted downward to enhance the light extraction efficiency.

For example, the reflective layer 160 may be formed of a metal layer including Al, Ag, or an alloy including Al or Ag. Aluminum or silver may effectively reflect light generated in the active layer, The efficiency can be greatly improved.

In the second embodiment, the first electrode 131b has a larger horizontal width than the first electrode 131 of the first embodiment, and can be mounted in a stable form when the package is mounted. In addition, the area of the first electrode 131b is wider than that of the first electrode 131 of the first embodiment, and can be mounted in a stable form when the package is mounted.

Also, as in the first embodiment, the first electrode 131b may be omitted in the chip process, and the first electrode may be formed on the package body.

3 is a sectional view of the light emitting device 103 according to the third embodiment.

The third embodiment can adopt the technical features of the first embodiment or the second embodiment.

In the third embodiment, the passivation layer 140 may be omitted, and the light-transmitting electrode layer 150b may be formed so as to be spaced apart from the active layer 114. [

4 is a cross-sectional view of the light emitting device 104 according to the fourth embodiment.

The fourth embodiment can adopt the technical features of the first embodiment or the second embodiment.

In the fourth embodiment, the translucent electrode layer 150c is also formed on the passivation layer 140 to increase the rigidity of the light emitting device chip.

5 is a cross-sectional view of a light emitting device 105 according to the fifth embodiment.

The fifth embodiment can adopt the technical features of the first embodiment or the second embodiment.

In the fifth embodiment, since the shape of the passivation layer 140b is inclined, it is possible to minimize the formation of a step when the transparent electrode layer 150d is formed on the passivation layer 140b, thereby improving the stability of the device.

According to the light emitting device according to the embodiment, the light emitting area can be increased to increase the light flux.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS.

First, the substrate 106 is prepared as shown in FIG. The substrate 106 includes a conductive substrate or an insulating substrate such as the substrate 106 is a sapphire (Al ₂ O _3), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ 0 ₃ May be used. A concavo-convex structure may be formed on the substrate 106, but the present invention is not limited thereto.

The substrate 106 may be wet-cleaned to remove impurities on the surface.

The light emitting structure 110 including the first conductive semiconductor layer 112, the active layer 114, and the second conductive semiconductor layer 116 may be formed on the substrate 106.

A buffer layer 108 may be formed on the substrate 106. The buffer layer 108 may mitigate lattice mismatch between the material of the light emitting structure 110 and the substrate 106 and the material of the buffer layer 108 may be a Group III-V compound semiconductor such as GaN, InN, AlN , InGaN, AlGaN, InAlGaN, and AlInN.

An undoped semiconductor layer may be formed on the buffer layer 108, but the present invention is not limited thereto.

The first conductive semiconductor layer 112 may be formed of a Group III-V compound semiconductor doped with a first conductive dopant. When the first conductive semiconductor layer 112 is an N-type semiconductor layer, The first conductive dopant may include, but is not limited to, Si, Ge, Sn, Se, and Te as an N-type dopant.

The first conductive semiconductor layer 112 may include a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + .

The first conductive semiconductor layer 112 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

The first conductive semiconductor layer 112 may be formed by a CVD method or molecular beam epitaxy (MBE), sputtering, or vapor phase epitaxy (HVPE). . The first conductive semiconductor layer 112 may be formed by depositing a silane containing an n-type impurity such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ) Gas (SiH ₄ ) may be implanted and formed.

Next, a current diffusion layer (not shown) is formed on the first conductive type semiconductor layer 112. The current diffusion layer may be an undoped GaN layer, but is not limited thereto. The current diffusion layer may have a thickness of 50 nm to 200 nm, but is not limited thereto.

Next, in the embodiment, an electron injection layer (not shown) may be formed on the current diffusion layer. The electron injection layer may be a first conductivity type gallium nitride layer. For example, the electron injection layer may be the electron injection efficiently by being doped at a concentration of the n-type doping element ^{6.0x10 18 atoms / cm 3 ~ 8.0x10} 18 atoms / cm 3.

In addition, the embodiment can form a strain control layer (not shown) on the electron injection layer. For example, a strain control layer formed of In _y Al _x Ga _(1-xy) N (0? X? 1, 0? _Y? 1) / GaN or the like can be formed on the electron injection layer.

The strain control layer can effectively alleviate the stress that is caused by the lattice mismatch between the first conductive semiconductor layer 112 and the active layer 114.

Further, as the strain control layer is repeatedly laminated in at least six cycles having compositions such as first In _x1 GaN and second In _x2 GaN, more electrons are collected at a low energy level of the active layer 114, The probability of recombination of holes is increased and the luminous efficiency can be improved.

Thereafter, the active layer 114 is formed on the strain control layer.

Electrons injected through the first conductive type semiconductor layer 112 and holes injected through the second conductive type semiconductor layer 116 formed after the first and second conductive type semiconductor layers 116 and 116 are mutually combined to form an energy band unique to the active layer Which emits light having an energy determined by < RTI ID = 0.0 >

The active layer 114 may be formed of at least one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure. For example, the active layer 114 may be formed with a multiple quantum well structure by injecting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) But is not limited thereto.

The well layer / barrier layer of the active layer 114 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP But is not limited thereto. The well layer may be formed of a material having a band gap lower than the band gap of the barrier layer.

In the embodiment, an electron blocking layer (not shown) is formed on the active layer 114 to serve as electron blocking and cladding of the active layer, thereby improving the luminous efficiency. For example, the electron blocking layer may be formed of an Al _x In _y Ga _(1-xy) N (0? _{X ? 1, 0? Y ? 1} ) semiconductor, And may be formed to a thickness of about 100 A to about 600 A, but the present invention is not limited thereto.

The electron blocking layer may be formed of a superlattice of Al _z Ga _(1-z) N / GaN (0? _Z ? 1), but is not limited thereto.

The electron blocking layer can efficiently block the electrons that are ion-implanted into the p-type and overflow, and increase the hole injection efficiency. For example, the electron blocking layer can effectively prevent electrons that are overflowed by ion implantation of Mg in a concentration range of about 10 ¹⁸ to 10 ²⁰ / cm ³ , and increase the hole injection efficiency.

The second conductive semiconductor layer 116 may be a Group III-V compound semiconductor doped with a second conductive dopant, for example, In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y 1, 0? X + y? 1). When the second conductive semiconductor layer 116 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a P-type dopant.

The second conductive type semiconductor layer 116 is Bisei that the chamber comprises a p-type impurity such as trimethyl gallium gas (TMGa), ammonia gas (NH _3), nitrogen gas (N _2), and magnesium (Mg) butyl bicyclo The p-type GaN layer may be formed by implanting pentadienyl magnesium (EtCp ₂ Mg) {Mg (C ₂ H ₅ C ₅ H ₄ ) ₂ }, but the present invention is not limited thereto.

In an exemplary embodiment, the first conductive semiconductor layer 112 may be an N-type semiconductor layer, and the second conductive semiconductor layer 116 may be a P-type semiconductor layer. On the second conductive semiconductor layer 116, a semiconductor layer, for example, an N-type semiconductor layer (not shown) having a polarity opposite to that of the second conductive type may be formed. Accordingly, the light emitting structure 110 may have any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

Thereafter, the ohmic layer 120 is formed on the second conductive semiconductor layer 116. For example, the ohmic layer 120 may be formed by laminating a single metal, a metal alloy, a metal oxide, or the like in multiple layers so as to efficiently inject carriers.

Next, as shown in FIG. 7, after the substrate 106 is reduced to a predetermined thickness, a passivation layer 140 may be formed as an insulating layer on the sides of the active layer 114 and the second conductivity type semiconductor layer 116. Depending on the embodiment, the passivation layer 140 may be omitted.

Next, a light transmitting electrode layer 150 electrically connected to the first conductivity type semiconductor layer 112 is formed on the bottom surface and the side surface of the substrate 106.

The light-transmitting electrode layer 150 may be formed by laminating a single metal, a metal alloy, a metal oxide, or the like so as to efficiently perform carrier injection. For example, the light transmitting electrode layer 150 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (ZnO), indium gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON nitride, AGZO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Ni, IrOx / Au, and Ni / IrOx / , Au, and Hf, and is not limited to such a material.

Next, as shown in FIG. 8, a first electrode 131 is formed on the transparent electrode layer 150, and a second electrode 132 is formed on the ohmic layer 120. The process of the first electrode 131 may be omitted according to the embodiment.

In addition, in the embodiment, the current blocking layer 135 may be formed on the lower side of the second electrode 132 with an insulating layer or the like to increase the light efficiency by current diffusion.

According to the light emitting device of the embodiment, by forming the light transmitting electrode layer 150 formed on the bottom surface and the side surface of the substrate 106 and electrically connected to the first conductivity type semiconductor layer 112, the light emitting area is increased, .

The light emitting device according to the embodiment does not etch to form the n-electrode, and unlike the vertical light emitting device, the substrate is not removed, thereby maximizing the area of the active layer as the light emitting layer.

According to the embodiment, since the first electrode 131 electrically connected to the first conductivity type semiconductor layer is formed on the lower side of the light emitting device chip, the problem that light is absorbed from the n electrode can be solved.

In addition, according to the embodiment, since the first electrode, for example, the n-electrode is not separately fabricated, an electrode is formed on the package body so that the light emitting device chip can be mounted and used. Can be solved.

In addition, according to the embodiment, the light transmitting electrode layer 150 is formed on the side surfaces of the substrate 106 and the first conductivity type semiconductor layer 112, so that the light emitted to the side can be extracted more efficiently.

According to the light emitting device according to the embodiment, the luminous area can be increased and the luminous flux can be increased.

9 is a view illustrating a light emitting device package having the light emitting device according to the embodiments.

The light emitting device package 200 according to the embodiment includes a package body 205, a third electrode layer 213 and a fourth electrode layer 214 provided on the package body 205, a package body 205, And a molding member 240 surrounding the light emitting device 100. The light emitting device 100 includes a first electrode layer 213 and a fourth electrode layer 214. The light emitting device 100 is electrically connected to the third electrode layer 213 and the fourth electrode layer 214,

The package body 205 may be formed of a silicon material, a synthetic resin material, or a metal material, and the inclined surface may be formed around the light emitting device 100.

The third electrode layer 213 and the fourth electrode layer 214 are electrically isolated from each other and provide power to the light emitting device 100. The third electrode layer 213 and the fourth electrode layer 214 may function to increase light efficiency by reflecting the light generated from the light emitting device 100, And may serve to discharge heat to the outside.

The light emitting device 100 may include the light emitting device illustrated in FIGS. 1 to 5, but the present invention is not limited thereto.

The light emitting device 100 may be mounted on the package body 205 or on the third electrode layer 213 or the fourth electrode layer 214.

The light emitting device 100 may be electrically connected to the third electrode layer 213 and / or the fourth electrode layer 214 by a wire, flip chip, or die bonding method. The light emitting device 100 is electrically connected to the third electrode layer 213 through the wire 230 and is electrically connected to the fourth electrode layer 214 directly.

The molding member 240 surrounds the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 240 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

A light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, and the like, which are optical members, may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit or function as a lighting unit. For example, the lighting system may include a backlight unit, a lighting unit, a pointing device, a lamp, and a streetlight.

10 is a perspective view 1100 of a lighting unit according to an embodiment. However, the illumination unit 1100 of Fig. 10 is an example of the illumination system and is not limited thereto.

The illumination unit 1100 may include a case body 1110, a light emitting module 1130 installed in the case body 1110, a connection unit 1130 installed in the case body 1110, Terminal 1120. [0031]

The case body 1110 is preferably formed of a material having a good heat dissipation property, and may be formed of, for example, a metal material or a resin material.

The light emitting module unit 1130 may include a substrate 1132 and at least one light emitting device package 200 mounted on the substrate 1132.

The substrate 1132 may be a circuit pattern printed on an insulator. For example, the PCB 1132 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB . ≪ / RTI >

Further, the substrate 1132 may be formed of a material that efficiently reflects light, or may be formed of a color whose surface is efficiently reflected, for example, white, silver, or the like.

The at least one light emitting device package 200 may be mounted on the substrate 1132. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) 100. The light emitting diode 100 may include a colored light emitting diode that emits red, green, blue, or white colored light, and a UV light emitting diode that emits ultraviolet (UV) light.

The light emitting module unit 1130 may be arranged to have a combination of various light emitting device packages 200 to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be arranged in combination in order to secure a high color rendering index (CRI).

The connection terminal 1120 may be electrically connected to the light emitting module 1130 to supply power. In an embodiment, the connection terminal 1120 is connected to the external power source by being inserted in a socket manner, but is not limited thereto. For example, the connection terminal 1120 may be formed in a pin shape and inserted into an external power source or may be connected to an external power source through a wiring.

11 is an exploded perspective view 1200 of a backlight unit according to an embodiment. However, the backlight unit 1200 of FIG. 11 is an example of the illumination system, and the present invention is not limited thereto.

The backlight unit 1200 according to the embodiment includes a light guide plate 1210, a light emitting module unit 1240 for providing light to the light guide plate 1210, a reflection member 1220 below the light guide plate 1210, But the present invention is not limited thereto, and may include a bottom cover 1230 for housing the light emitting module unit 1210, the light emitting module unit 1240, and the reflecting member 1220.

The light guide plate 1210 serves to diffuse light into a surface light source. The light guide plate 1210 may be made of a transparent material such as acrylic resin such as PMMA (polymethyl methacrylate), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. ≪ / RTI >

The light emitting module part 1240 provides light to at least one side of the light guide plate 1210 and ultimately acts as a light source of a display device in which the backlight unit is installed.

The light emitting module 1240 may be in contact with the light guide plate 1210, but is not limited thereto. Specifically, the light emitting module 1240 includes a substrate 1242 and a plurality of light emitting device packages 200 mounted on the substrate 1242. The substrate 1242 is mounted on the light guide plate 1210, But is not limited to.

The substrate 1242 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1242 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like.

The plurality of light emitting device packages 200 may be mounted on the substrate 1242 such that a light emitting surface on which the light is emitted is spaced apart from the light guiding plate 1210 by a predetermined distance.

The reflective member 1220 may be formed under the light guide plate 1210. The reflection member 1220 reflects the light incident on the lower surface of the light guide plate 1210 so as to face upward, thereby improving the brightness of the backlight unit. The reflective member 1220 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto.

The bottom cover 1230 may receive the light guide plate 1210, the light emitting module 1240, and the reflective member 1220. For this purpose, the bottom cover 1230 may be formed in a box shape having an opened upper surface, but the present invention is not limited thereto.

The bottom cover 1230 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding.

According to the light emitting device, the light emitting device manufacturing method, the light emitting device package, and the illumination system according to the embodiments, the light emitting area can be increased to increase the light flux.

The features, structures, effects, and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

106: substrate, 112: first conductivity type semiconductor layer, 114: active layer,
116: second conductivity type semiconductor layer,
131: first electrode, 132: second electrode,
140: passivation layer, 150: translucent electrode layer

Claims (8)

A first electrode;
A substrate on the first electrode;
A first conductive semiconductor layer on the substrate;
An active layer on the first conductive semiconductor layer;
A second conductive semiconductor layer on the active layer;
An ohmic layer on the second conductive semiconductor layer;
A current blocking layer disposed in the ohmic layer;
A light-transmitting electrode layer which is disposed on a bottom surface of the substrate and between the first electrodes and on a side surface of the substrate, the first conductivity type semiconductor layer, and the active layer, and is electrically connected to the first conductivity type semiconductor layer;
A passivation layer disposed on a side surface of the second conductivity type semiconductor layer and the ohmic layer; And
A second electrode on the ohmic layer,
Wherein the width of the first electrode is greater than the width of the second electrode,
The current blocking layer is in contact with the lower surface of the second electrode,
Wherein the current blocking layer, the second electrode, and the first electrode overlap vertically. The method according to claim 1,
And a reflective layer disposed between the transparent electrode layer and the first electrode,
Wherein the reflective layer is in contact with the lower surface of the transparent electrode layer and the upper surface of the first electrode. The method according to claim 1,
Wherein the light-transmitting electrode layer is in contact with a lower surface and a side surface of the passivation layer. The method according to claim 1,
Wherein the passivation layer comprises an inclined surface,
Wherein the light-transmitting electrode layer is in contact with an inclined surface of the passivation layer. delete delete delete delete

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