KR20120138275A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20120138275A
KR20120138275A KR1020110057621A KR20110057621A KR20120138275A KR 20120138275 A KR20120138275 A KR 20120138275A KR 1020110057621 A KR1020110057621 A KR 1020110057621A KR 20110057621 A KR20110057621 A KR 20110057621A KR 20120138275 A KR20120138275 A KR 20120138275A
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South Korea
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layer
light emitting
emitting device
type
gallium nitride
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KR1020110057621A
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Korean (ko)
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나종호
심세환
윤재인
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엘지이노텍 주식회사
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Priority to KR1020110057621A priority Critical patent/KR20120138275A/en
Publication of KR20120138275A publication Critical patent/KR20120138275A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.
A light emitting device according to an embodiment includes a first conductive semiconductor layer; A current diffusion layer on the first conductivity type semiconductor layer; An active layer on the current spreading layer; And a second conductivity type semiconductor layer on the active layer, and the current spreading layer may include a superlattice layer having a first layer and a second layer of at least one superlattice structure.

Description

[0001] LIGHT EMITTING DEVICE [0002]

Embodiments relate to a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and an illumination system.

Light emitting devices (LEDs) are p-n junction diodes whose electrical energy is converted into light energy. LED can realize various colors by adjusting the composition ratio of compound semiconductors.

The epitaxial structure used in the light emitting device includes an electron injection layer, a light emitting layer, and a hole injection layer, and in the case of a horizontal type LED, the electron injection layer is exposed through mesa etching in the grown epitaxial structure. After that, n-contact is formed. On the other hand, the electrons injected through the n-contact have a characteristic of flowing close to the contact portion, so that the undoped nitriding for dispersing the injected electrons to the entire area before reaching the multi-quantum well layer of the light emitting layer A gallium layer (undoped-GaN layer) is introduced as a current spreading layer.

According to this conventional technique, the current diffusion layer contributes to the function of current dispersion, but on the other hand, the injected electrons are difficult to move to the quantum well layer of the light emitting layer, and thus a large amount of emission loss of electrons that cannot pass is caused. There is a problem.

Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system, which may provide a current spreading function and improve electrical characteristics and increase brightness.

The light emitting device according to the embodiment includes a first conductivity type semiconductor layer; A current diffusion layer on the first conductivity type semiconductor layer; An active layer on the current spreading layer; And a second conductivity type semiconductor layer on the active layer, and the current spreading layer may include a superlattice layer having a first layer and a second layer of at least one superlattice structure.

According to the light emitting device, the method of manufacturing the light emitting device, the light emitting device package, and the lighting system according to the embodiment, the current spreading function can be provided, the operating voltage Vf can be reduced, and the brightness can be increased.

1 is a sectional view of a light emitting device according to a first embodiment;
2 is an enlarged view of a current spreading layer in the light emitting device according to the first embodiment;
3A and 3B illustrate effects of the light emitting device according to the embodiment.
4 to 7 are process cross-sectional views of the light emitting device according to the first embodiment.
8 is a sectional view of a light emitting device according to a second embodiment;
9 to 11 are process cross-sectional views of the light emitting device according to the second embodiment.
12 is a sectional view of a light emitting device package according to an embodiment.
13 is a perspective view of a lighting unit according to an embodiment.
14 is a perspective view of a backlight unit according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

(Example)

1 is a cross-sectional view of the light emitting device 100 according to the first embodiment, and FIG. 2 is an enlarged view of the current spreading layer 120 in the light emitting device according to the first embodiment.

The light emitting device 100 according to the first embodiment includes a first conductive semiconductor layer 142, a current spreading layer 120 formed on the first conductive semiconductor layer 142, and a current spreading layer 120. The active layer 144 and the second conductive semiconductor layer 146 formed on the active layer 144 are included.

In an embodiment, the first conductive semiconductor layer 142, the active layer 144, and the second conductive semiconductor layer 146 may form a light emitting structure, but are not limited thereto.

The current spreading layer 120 may include a superlattice layer in which the first layer 122 and the second layer 124 have at least one superlattice structure. For example, the first layer 122 may be an undoped gallium nitride layer, and the second layer 124 may be an n-type GaN layer, but is not limited thereto. It is not.

For example, the light emitting device 100 according to the first embodiment may include a buffer layer 110, a first conductive semiconductor layer 142 formed on the buffer layer 110, and an n-type gallium nitride layer (n-type GaN). layer 124 and an undoped GaN layer 122 and a current diffusion layer 120 formed on the first conductive semiconductor layer 142 and an active layer formed on the current diffusion layer 120 144 and a second conductivity type semiconductor layer 146 formed on the active layer 144.

The embodiment may include a strain control layer 134 under the active layer 144, the strain control layer 144 is a stress bizarre due to the lattice mismatch between the first conductive semiconductor layer 142 and the active layer 144 Can be effectively alleviated.

The strain control layer 134 may be formed of In y Al x Ga (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) / GaN, but is not limited thereto.

In addition, as the strain control layer 134 is repeatedly stacked in at least six cycles having a composition of the first In x1 GaN, the second In x2 GaN, or the like, more electrons are collected at the low energy level of the active layer 144, and as a result, The probability of recombination of electrons and holes may be increased, thereby improving luminous efficiency.

An embodiment may include a first conductivity type electron injection layer 132 on the current diffusion layer 120.

The first conductivity type electron injection layer 132 may be an n-type high concentration gallium nitride layer, and may be doped with a conductivity type impurity such as the first conductivity type semiconductor layer 142, but the first conductivity type semiconductor layer 142 may be used. Can be doped to a higher concentration of n-type). For example, the first conductivity type electron injection layer 132 can be efficiently injected with the n-type doping element at a concentration of 6.0x10 18 atoms / cm 3 to 8.0x10 18 atoms / cm 3 .

In addition, the embodiment may further include an electron blocking layer 150 between the active layer 144 and the second conductivity-type semiconductor layer 146, the light-transmitting electrode 160 on the second conductivity-type semiconductor layer 146. After forming the second electrode 172 may be provided.

Hereinafter, the current spreading layer 120 will be described in more detail.

In an embodiment, the n-type gallium nitride layer as the second layer 124 may include an n-type Al x In y Ga (1-xy) N layer (0 ≦ x, y ≦ 1), but is not limited thereto. For example, the second layer 124 may include an N doped InGaN layer doped with n-type impurity or an N doped AlInGaN layer doped with n-type impurity.

In the current spreading layer 120, the n-type gallium nitride layer 124 and the undoped gallium nitride layer 122 may be repeated in a plurality of cycles.

For example, in the current diffusion layer 120, the n-type gallium nitride layer 124 and the undoped gallium nitride layer 122 are formed in about 2 to 5 cycles, thereby reducing the operating voltage Vf and increasing the brightness. have. If the period of the n-type gallium nitride layer 124 and the undoped gallium nitride layer 122 of the current expansion layer 120 exceeds 5 cycles, there may be a problem in the supply of electrons, the thickness of the chip is too thick Can lose.

Injecting electrons to the multi-quantum well layer when the current diffusion layer 120 is formed of n-type Al x In y Ga (1-xy) N layer 124 and undoped gallium nitride layer 122 in a plurality of cycles Instead of passing through the current diffusion layer of the conventional undoped gallium nitride layer of about 100nm, it passes through the current diffusion layer 120 consisting of a superlattice including a layer doped with n-type impurities, thereby minimizing the number of electrons that cannot pass through As a result, the operating voltage Vf decreases and the brightness increases.

The current spreading layer 120 may have a thickness of 50 nm to 200 nm, but is not limited thereto. For example, when the current diffusion layer 120 includes an n-type AlxInyGa (1-xy) N layer 124 and an undoped gallium nitride layer 122, the total thickness of the current diffusion layer may range from 50 nm to 200 nm. If the thickness is less than 50 nm, it is difficult to contribute to the current diffusion, and if it exceeds 200 nm, the problem that Vf increases may occur.

In addition, the thickness of the undoped GaN layer 122 exceeds the thickness of the n-type GaN layer 124 and the n-type GaN layer 5 times or less than

For example, in the thickness ratio between the n-type Al x In y Ga (1-xy) N layer 124 and the undoped gallium nitride layer 122, the thickness of the undoped gallium nitride layer 122 is n-type Al. x In y Ga (1-xy) greater than the thickness of the N layer 124, but may have a range of 5 times or less, if more than 5 times Vf is too large, there is a problem that the undoped gallium nitride layer 122 ) Is less than the thickness of the n-type Al x In y Ga (1-xy) N layer 124 may reduce the function of current dispersion.

The n-type gallium nitride layer 124 may be formed by spike doping, but is not limited thereto.

n-type dopant element of the n-type gallium nitride layer 124 may be doped at a concentration of 1.0x10 18 atoms / cm 3 ~ 2.0x10 18 atoms / cm 3.

For example, Si may be employed as the n-type doping element of the n-type Al x In y Ga (1-xy) N layer 124, and the doping concentration of Si is 1.0x10 18 atoms / cm. 3 to 2.0x10 18 atoms / cm 3 , and when the doping range of Si exceeds the upper limit, the electron concentration may be too high to contribute to the current diffusion function. The problem of increasing Vf may occur.

The light emitting device 100 according to the first embodiment may further include a substrate 105 provided under the buffer layer 110, and a part of the first conductive semiconductor layer 142 may be exposed to the outside. The first electrode 171 may contact the exposed first conductive semiconductor layer 142.

In an embodiment, the buffer layer 110 may include a first buffer layer 111 and a second buffer layer 112 formed on the substrate 105.

For example, the first buffer layer 111 may be an undoped gallium nitride layer, and the second buffer layer 112 may be an Al x Ga (1-x) N (0 ≦ x ≦ 1) / GaN superlattice layer.

The first electrode 171 may be in contact with the first conductivity type semiconductor layer 142 exposed by mesa etching.

Electrons injected by the first electrode 171 are supplied to the light emitting structure through the first conductivity-type semiconductor layer 142, where the electrons may be distributed through the current diffusion layer 120.

That is, in the horizontal type light emitting device as in the first embodiment, the first electrode 171 is in contact with the first conductivity type semiconductor layer 142 at a position lower than the current diffusion layer 120 to contact the current diffusion layer 120. Can increase the function of current distribution.

3A and 3B illustrate exemplary effects of the light emitting device according to the embodiment.

3A illustrates an example in which the operating voltage Vf is reduced when the light emitting device according to the embodiment is applied. For example, the superlattice (SLS) current diffusion layer 120, which is an n-type GaN layer / undoped GaN layer, as in the embodiment, rather than using a bulk single layer of an undoped gallium nitride layer as the current diffusion layer. In this case, the operating voltage Vf can be reduced.

3B is an example in which the brightness Po is increased when the light emitting device according to the embodiment is applied. For example, the superlattice (SLS) current, which is an n-type GaN layer / undoped GaN layer, as in the embodiment, than when a undoped gallium layer is used as a bulk diffusion single layer as a current diffusion layer in the prior art. It can be seen that the light intensity increases when the diffusion layer 120 is employed.

According to the light emitting device according to the embodiment, the current diffusion layer consisting of a single layer of an undoped gallium nitride layer (undoped-GaN layer) used in the prior art n-type GaN layer (n-type GaN layer) and undoped gallium nitride The lattice structure of the undoped GaN layer is converted into a superlattice structure to provide a current spreading function, reduce the operating voltage Vf, and increase brightness.

Hereinafter, a method of manufacturing the light emitting device 100 according to the first embodiment will be described with reference to FIGS. 4 to 7.

First, the substrate 105 is prepared as shown in FIG. 4. The substrate 105 includes a conductive substrate or an insulating substrate, for example, the substrate 105 may include sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga 2 0 3 . May be used. An uneven structure may be formed on the substrate 105, but is not limited thereto. Impurities on the surface may be removed by wet cleaning the substrate 105.

The buffer layer 110 may be formed on the substrate 105. The buffer layer 110 may mitigate lattice mismatch between the material of the light emitting structure and the substrate 105, and the material of the buffer layer 110 may be a Group III-V compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN. It may be formed of at least one of, InAlGaN, AlInN.

In an embodiment, the buffer layer 110 may include a first buffer layer 111 and a second buffer layer 112 formed on the substrate 105.

For example, the first buffer layer 111 may be an undoped gallium nitride layer, and the second buffer layer 112 may be an Al x Ga (1-x) N (0 ≦ x ≦ 1) / GaN superlattice layer.

The Al x Ga (1-x) N (0 ≦ x ≦ 1) / GaN superlattice layer, which is the second buffer layer 112, more effectively reduces dislocations due to lattice mismatch between the material of the light emitting structure and the substrate 105. You can block it.

Thereafter, the first conductive semiconductor layer 142 is formed on the buffer layer 110.

The first conductivity type semiconductor layer 142 may be implemented as a group III-V compound semiconductor doped with a first conductivity type dopant, and when the first conductivity type semiconductor layer 142 is an N-type semiconductor layer, The conductive dopant is an N-type dopant and may include Si, Ge, Sn, Se, Te, but is not limited thereto.

A first conductive type semiconductor layer 142 may include semiconductor material having the compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) can do. In addition, the first conductive semiconductor layer 142 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP. .

The first conductive semiconductor layer 142 may form an N-type GaN layer using a chemical vapor deposition method (CVD), a molecular beam epitaxy (MBE), or a method such as sputtering or hydroxide vapor phase epitaxy (HVPE). In addition, the first conductive semiconductor layer 142 may include a silane gas containing n-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and silicon (Si) in the chamber. (SiH 4 ) may be formed by implantation.

Next, a current spreading layer 120 is formed on the first conductive semiconductor layer 142, wherein the first layer 122 and the second layer 124 include a superlattice layer having at least one superlattice structure. do. For example, the first layer 122 may be an undoped gallium nitride layer, and the second layer 124 may be an n-type GaN layer, but is not limited thereto. It is not.

FIG. 5A is an enlarged view of the current spreading layer 120 in the embodiment, and FIG. 5B is an exemplary view of the process of the current spreading layer 120 in the embodiment.

In an embodiment, the current spreading layer 120 may include an n-type gallium nitride layer 124 and an undoped gallium nitride layer 122. For example, the current diffusion layer 120 may include an n-type Al x In y Ga (1-xy) N layer (0 ≦ x, y ≦ 1) 124 and an undoped gallium nitride layer 122. It is not limited to this.

In an embodiment, the second layer 124 may include an n-type gallium nitride layer 124, an n-type gallium nitride layer 124, 1-xy, and an N layer (0 ≦ x, y ≦ 1). . For example, the second layer 124 may include an N doped InGaN layer doped with n-type impurity or an N doped AlInGaN layer doped with n-type impurity.

The n-type gallium nitride layer 124 may be formed by spike doping, but is not limited thereto.

n-type doping element to the n-type gallium nitride layer 124 may be doped at a concentration of 1.0x10 18 atoms / cm 3 ~ 2.0x10 18 atoms / cm 3.

For example, Si may be employed as the n-type doping element of the n-type Al x In y Ga (1-xy) N layer 124, and the doping concentration of Si is 1.0x10 18 atoms / cm. 3 to 2.0x10 18 atoms / cm 3 , and when the doping range of Si exceeds the upper limit, the electron concentration may be too high to contribute to the current diffusion function. The problem of increasing Vf may occur.

In the current spreading layer 120, the n-type gallium nitride layer 124 and the undoped gallium nitride layer 122 may be repeated in a plurality of cycles.

For example, when the current diffusion layer 120 includes the n-type Al x In y Ga (1-xy) N layer 124 and the undoped gallium nitride layer 122 in a plurality of cycles, the injected electrons are multi-quantum wells. Instead of passing through the current diffusion layer of a conventional about 100 nm undoped gallium nitride layer until moving to the layer, it passes through the current diffusion layer 120 composed of a superlattice including a layer doped with n-type impurities, thereby failing to pass electrons. Since the number of can be minimized, the operating voltage (Vf) is reduced, the brightness is more effective.

The current spreading layer 120 may have a thickness of 50 nm to 200 nm, but is not limited thereto. For example, when the current diffusion layer 120 includes an n-type Al x In y Ga (1-xy) N layer 124 and an undoped gallium nitride layer 122, the total thickness of the current diffusion layer is in the range of 50 nm to 200 nm. If the thickness is less than 50nm, it may be difficult to contribute to the current diffusion, and if it exceeds 200nm, a problem may occur in that Vf increases.

In addition, the thickness of the undoped GaN layer 122 in the current diffusion layer 120 exceeds the thickness of the n-type GaN layer 124 and the n-type gallium nitride layer It may be less than five times the thickness of the (n-type GaN layer).

For example, in the thickness ratio between the n-type Al x In y Ga (1-xy) N layer 124 and the undoped gallium nitride layer 122, the thickness of the undoped gallium nitride layer 122 is n-type Al. x In y Ga (1-xy) greater than the thickness of the N layer 124, but may have a range of 5 times or less, if more than 5 times Vf is too large, there is a problem that the undoped gallium nitride layer 122 ) Is less than the thickness of the n-type Al x In y Ga (1-xy) N layer 124 may reduce the function of current dispersion.

According to the embodiment, the superlattice (SLS) current diffusion layer 120, which is an n-type GaN layer / undoped GaN layer, as in the embodiment, is used, when the undoped gallium layer is a bulk single layer as the current diffusion layer. ), The operating voltage Vf decreases.

Further, according to the embodiment, the superlattice (which is an n-type GaN layer / undoped GaN layer, as in the embodiment) is employed, compared to the case where the undoped gallium layer is a bulk single layer as the current diffusion layer in the prior art. SLS) the light also increases when the current diffusion layer 120 is employed.

According to the light emitting device according to the embodiment and a method of manufacturing the same, a current diffusion layer consisting of a single layer of an undoped gallium nitride layer (undoped-GaN layer) used in the prior art is an n-type gallium nitride layer (n-type GaN layer) and The undoped GaN layer may be converted into a stacked structure to provide a current spreading function, reduce an operating voltage Vf, and increase brightness.

Next, in an embodiment, the first conductivity type electron injection layer 132 may be formed on the current diffusion layer 120.

The first conductivity type electron injection layer 132 may be an n-type high concentration gallium nitride layer, and may be doped with a conductivity type impurity such as the first conductivity type semiconductor layer 142, but the first conductivity type semiconductor layer 142 may be used. Can be doped to a higher concentration of n-type). For example, the first conductivity type electron injection layer 132 can be efficiently injected with the n-type doping element at a concentration of 6.0x10 18 atoms / cm 3 to 8.0x10 18 atoms / cm 3 .

In addition, the embodiment may form a strain control layer 134 on the first conductivity type electron injection layer 132.

Accordingly, in the exemplary embodiment, the strain control layer 134 may be provided under the active layer 144, and the strain control layer 144 may be disposed in a lattice mismatch between the first conductive semiconductor layer 142 and the active layer 144. The strange stress can be effectively alleviated.

The strain control layer 134 may be formed of In y Al x Ga (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) / GaN, but is not limited thereto.

In addition, as the strain control layer 134 is repeatedly stacked in at least six cycles having a composition of the first In x1 GaN, the second In x2 GaN, or the like, more electrons are collected at the low energy level of the active layer 144, and as a result, The probability of recombination of electrons and holes may be increased, thereby improving luminous efficiency.

Thereafter, the active layer 144 is formed on the strain control layer 134.

In the active layer 144, electrons injected through the first conductive semiconductor layer 142 and holes injected through the second conductive semiconductor layer 146 formed thereafter meet each other to form an energy band unique to the active layer (light emitting layer) material. It is a layer that emits light with energy determined by it.

The active layer 144 may be formed of at least one of a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. For example, the active layer 144 may be injected with trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited.

The well layer / barrier layer of the active layer 144 may be formed of one or more pair structures of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs), / AlGaAs, GaP (InGaP) / AlGaP. But it is not limited thereto. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

In an embodiment, the conductive cladding layer 150 may be formed on or under the active layer 144. The conductive cladding layer 150 may be an electron blocking layer 150 formed of an Al x Ga (1-x) N-based semiconductor, and may have a band gap higher than that of the active layer 144.

Thereafter, the second conductive semiconductor layer 146 is formed on the conductive cladding layer 150.

A second conductive semiconductor layer 146 is a second conductive type dopant is doped -5-group three-V compound semiconductor, for example, In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤ And 1, 0 ≦ x + y ≦ 1). When the second conductive semiconductor layer 146 is a P-type semiconductor layer, the second conductive dopant may be a P-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

The second conductivity type semiconductor layer 146 is a non-cetyyl cyclopenta containing p-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and magnesium (Mg) in the chamber. Dienyl magnesium (EtCp 2 Mg) {Mg (C 2 H 5 C 5 H 4 ) 2 } may be injected to form a p-type GaN layer, but is not limited thereto.

In an embodiment, the first conductive semiconductor layer 142 may be an N-type semiconductor layer, and the second conductive semiconductor layer 146 may be a P-type semiconductor layer, but is not limited thereto. In addition, a semiconductor, for example, an N-type semiconductor layer (not shown) having a polarity opposite to that of the second conductivity type may be formed on the second conductivity type semiconductor layer 146. Accordingly, the light emitting structure may be implemented as any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

Next, as shown in FIG. 6, a portion of the first conductivity-type semiconductor layer 142 may be exposed by mesa etching a portion of the light emitting structure. For example, the second conductive semiconductor layer 146, the conductive cladding layer 150, the active layer 144, the strain control layer 134 and the high concentration gallium nitride layer 132 are partially removed to remove the first conductive semiconductor. A portion of layer 142 may be exposed.

Next, as illustrated in FIG. 7, the transparent electrode 160 is formed on the second conductive semiconductor layer 146, the second electrode 172 is formed, and the exposed first conductive semiconductor layer 142 is exposed. 1 conductive semiconductor layer 142.

In an embodiment, the first electrode 171 may be in contact with the first conductivity type semiconductor layer 142 exposed by mesa etching.

Electrons injected by the first electrode 171 are supplied to the light emitting structure through the first conductivity-type semiconductor layer 142, where electrons may become current dispersion as they pass through the current diffusion layer 120.

That is, in the horizontal type light emitting device as in the first embodiment, the first electrode 171 contacts the first diffusion type semiconductor layer 142 at a position lower than the current diffusion layer 120 to contact the current diffusion layer 120. Can increase the function of current distribution.

In an embodiment, the current diffusion layer 120, which is a superlattice layer (n-type GaN layer / undoped GaN layer), is a layer that replaces the undoped GaN layer, which is a current diffusion layer in the prior art. The diffusion layer 120 is positioned above the N-electrode contacted by mesa etching, thereby contributing to current diffusion, which is different from the conventional superlattice layer SLs, such as potential blocking.

For example, the current spreading layer 120 in the embodiment includes an n-type Al x In y Ga (1-xy) N layer / un-doped GaN layer, and an n-type Al x In y Ga (1-xy) As the N layer 124 is doped with n-type doping elements, for example, Si, it contributes to current diffusion and at the same time lowers the operating voltage (Vf) and increases the brightness. The function is completely different from that of the AlGaN / GaN superlattice layer, which functions as a potential blocking function.

According to the embodiment, the superlattice (SLS) current, which is an n-type GaN layer / undoped GaN layer, as in the embodiment, than when the undoped gallium layer is a bulk single layer as the current diffusion layer in the prior art. When the diffusion layer 120 is employed, the operating voltage Vf decreases.

Further, according to the embodiment, the superlattice (SLS) current diffusion layer, which is an n-type GaN layer / undoped GaN layer, as in the embodiment, is used, as compared with the case where the undoped gallium layer is a bulk type single layer as the current diffusion layer. The brightness is also increased when employing 120.

According to the light emitting device according to the embodiment and a method of manufacturing the same, a current diffusion layer consisting of a single layer of an undoped gallium nitride layer (undoped-GaN layer) used in the prior art is an n-type gallium nitride layer (n-type GaN layer) and The undoped GaN layer may be converted into a stacked structure to provide a current spreading function, reduce an operating voltage Vf, and increase brightness.

8 is a cross-sectional view of the light emitting device 200 according to the second embodiment.

The light emitting device 200 according to the second embodiment is an example of a vertical light emitting device, and can adopt the technical features of the first embodiment, and the following description will focus on the differences.

The light emitting device 200 according to the second embodiment includes the second electrode layer 190, the second conductive semiconductor layer 146 formed on the second electrode layer 190, and the second conductive semiconductor layer 146. An active layer 144 formed on the active layer 144, a current spreading layer 120 formed on the active layer 144, and a first conductive semiconductor layer 142 formed on the current spreading layer 120. The first layer 122 and the second layer 124 may include a superlattice layer formed of at least one superlattice structure.

For example, the first layer 122 may be an undoped gallium nitride layer, and the second layer 124 may be an n-type GaN layer, but is not limited thereto. It is not.

The second transparent electrode layer 180 may be formed on the first conductive semiconductor layer 142, and the pad electrode 170 may be formed on the second transparent electrode layer 180.

Hereinafter, a method of manufacturing the light emitting device 200 according to the second embodiment will be described with reference to FIGS. 9 through 11.

As illustrated in FIG. 9, a buffer layer 110 may be formed on the substrate 105, and the buffer layer 110 may include a first buffer layer 111 and a second buffer layer 112, and the first buffer layer 111. ) May be an undoped gallium nitride layer, and the second buffer layer 112 may be an Al x Ga (1-x) N (0≤x≤1) / GaN superlattice layer, but is not limited thereto.

The Al x Ga (1-x) N (0 ≦ x ≦ 1) / GaN superlattice layer, which is the second buffer layer 112, more effectively reduces dislocations due to lattice mismatch between the material of the light emitting structure and the substrate 105. You can block it.

Thereafter, the first conductive semiconductor layer 142 is formed on the buffer layer 110. The first conductive semiconductor layer 142 may be implemented as a Group III-V compound semiconductor doped with a first conductive dopant, and the first conductive semiconductor layer 142 may be formed of In x Al y Ga 1 -x-. and a semiconductor material having a compositional formula of y N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1).

Thereafter, the current diffusion layer 120 is formed on the first conductivity type semiconductor layer 142.

The current spreading layer 120 may be a superlattice layer including an n-type gallium nitride layer 124 and an undoped gallium nitride layer 122. For example, the current diffusion layer 120 may include an n-type Al x In y Ga (1-xy) N layer (0 ≦ x, y ≦ 1) 124 and an undoped gallium nitride layer 122. It is not limited to this. The n-type gallium nitride layer 124 may be formed by spike doping, but is not limited thereto.

n-type doping element to the n-type gallium nitride layer 124 may be doped at a concentration of 1.0x10 18 atoms / cm 3 ~ 2.0x10 18 atoms / cm 3.

In the current spreading layer 120, the n-type gallium nitride layer 124 and the undoped gallium nitride layer 122 may be repeated in a plurality of cycles.

The current spreading layer 120 may have a thickness of 50 nm to 200 nm, but is not limited thereto. For example, when the current diffusion layer 120 includes an n-type Al x In y Ga (1-xy) N layer 124 and an undoped gallium nitride layer 122, the total thickness of the current diffusion layer is in the range of 50 nm to 200 nm. If the thickness is less than 50nm, it may be difficult to contribute to the current diffusion, and if it exceeds 200nm, a problem may occur in that Vf increases.

In addition, the thickness of the undoped GaN layer 122 in the current diffusion layer 120 exceeds the thickness of the n-type GaN layer 124 and the n-type gallium nitride layer It may be less than five times the thickness of the (n-type GaN layer).

According to the embodiment, the superlattice (SLS) current, which is an n-type GaN layer / undoped GaN layer, as in the embodiment, than when the undoped gallium layer is a bulk single layer as the current diffusion layer in the prior art. When the diffusion layer 120 is employed, the operating voltage Vf decreases.

Further, according to the embodiment, the superlattice (which is an n-type GaN layer / undoped GaN layer, as in the embodiment) is employed, compared to the case where the undoped gallium layer is a bulk single layer as the current diffusion layer in the prior art. SLS) the light also increases when the current diffusion layer 120 is employed.

According to the light emitting device according to the embodiment and the manufacturing method thereof,

Next, the high concentration gallium nitride layer 132 and the strain control layer 134 may be formed on the current spreading layer 120.

Thereafter, the active layer 144 and the conductive cladding layer 150 and the conductive cladding layer 150 and the semiconductor layer 146 may be formed on the strain control layer 134.

Next, the second electrode layer 190 may be formed on the second conductivity type semiconductor layer 146.

The second electrode layer 190 may include an ohmic layer 192, a reflective layer 194, a bonding layer (not shown), a conductive substrate 190, and the like. The second electrode layer 190 is implanted with titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), molybdenum (Mo) or impurities It may be formed of at least one of the semiconductor substrate.

For example, the second electrode layer 190 may include an ohmic layer 192. The second electrode layer 190 may be formed by stacking a single metal, a metal alloy, a metal oxide, or the like in multiple layers to efficiently inject holes. For example, the ohmic layer may be indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), or indium gallium (IGTO). tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx , RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, It may be formed including at least one of Hf, but is not limited to such materials.

In addition, when the second electrode layer 190 includes the reflective layer 194, the second electrode layer 190 may be formed of Al, Ag, or a metal layer including an alloy including Al or Ag. Aluminum or silver can effectively reflect the light generated from the active layer to greatly improve the light extraction efficiency of the light emitting device.

In addition, when the second electrode layer 190 includes the coupling layer, the reflective layer 194 may be a reflection layer 194, or a coupling layer may be formed using nickel (Ni), gold (Au), or the like.

In addition, the second electrode layer 190 may include a conductive substrate 190. The conductive substrate 190 may be made of a metal, a metal alloy, or a conductive semiconductor material having excellent electrical conductivity so as to efficiently inject a carrier (hole or electron). For example, the conductive substrate may be copper (Cu), gold (Au), copper alloy (Cu Alloy), nickel (Ni-nickel), copper-tungsten (Cu-W), carrier wafers (eg GaN, Si, Ge). , GaAs, ZnO, SiGe, SiC, etc.) may be optionally included.

The conductive substrate 190 may be formed using an electrochemical metal deposition method or a bonding method using a eutectic metal.

Next, as shown in FIG. 10, the substrate 105 is removed to expose the buffer layer 110. The method of removing the substrate 105 may use a high power laser to separate the substrate or use a chemical etching method. In addition, the substrate 105 can also be removed by physically grinding.

For example, in the laser lift-off method, when a predetermined energy is applied at room temperature, energy is absorbed at the interface of the substrate 105 and the light emitting structure to thermally decompose the bonding surface of the light emitting structure to separate the substrate 105 from the light emitting structure. Can be.

In the embodiment, when the buffer layer 110 is formed between the light emitting structure and the substrate 105, the substrate 105 may be removed in a form in which the buffer layer 110 remains on the light emitting structure, but is not limited thereto.

Next, as shown in FIG. 11, the second transmissive electrode 180 may be formed on the light emitting structure or the buffer layer 110, and the pad electrode 170 may be formed on the second translucent electrode 180.

The second translucent electrode 180 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAZO), indium gallium zinc oxide (IGZO), and indium gallium (IGTO). tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx , RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, It may be formed including at least one of Hf, but is not limited to such materials.

According to the embodiment, the superlattice (SLS) current, which is an n-type GaN layer / undoped GaN layer, as in the embodiment, than when the undoped gallium layer is a bulk single layer as the current diffusion layer in the prior art. When the diffusion layer 120 is employed, the operating voltage Vf decreases.

Further, according to the embodiment, the superlattice (which is an n-type GaN layer / undoped GaN layer, as in the embodiment) is employed, compared to the case where the undoped gallium layer is a bulk single layer as the current diffusion layer in the prior art. SLS) the light also increases when the current diffusion layer 120 is employed.

According to the light emitting device according to the embodiment and a method of manufacturing the same, a current diffusion layer consisting of a single layer of an undoped gallium nitride layer (undoped-GaN layer) used in the prior art is an n-type gallium nitride layer (n-type GaN layer) and The undoped GaN layer may be converted into a stacked structure to provide a current spreading function, reduce an operating voltage Vf, and increase brightness.

12 is a cross-sectional view of a light emitting device package 210 according to the embodiment.

The light emitting device package according to the embodiment includes a body portion 205, a third electrode layer 213 and a fourth electrode layer 214 installed on the body portion 205, and a third electrode layer 213 installed on the body portion 205. ) And a light emitting device 100 electrically connected to the fourth electrode layer 214, and a molding member 240 surrounding the light emitting device 100.

The body 205 may be formed of a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The third electrode layer 213 and the fourth electrode layer 214 are electrically separated from each other, and serve to supply power to the light emitting device 100. In addition, the third electrode layer 213 and the fourth electrode layer 214 may serve to increase light efficiency by reflecting the light generated from the light emitting device 100, and externally generate heat generated from the light emitting device 100. May also act as a drain.

The light emitting device 100 may be applied to the horizontal type light emitting device illustrated in FIG. 1, but is not limited thereto. The horizontal light emitting device of FIG. 8 may also be applied.

The light emitting device 100 may be installed on the body 205 or may be installed on the third electrode layer 213 or the fourth electrode layer 214.

The light emitting device 100 may be electrically connected to the third electrode layer 213 and / or the fourth electrode layer 214 through a wire 230. In the embodiment, the light emitting device 100 of the horizontal type is illustrated. In this case, two wires 230 are used but are not limited thereto.

The molding member 240 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 240 may include a phosphor (not shown) to change the wavelength of the light emitted from the light emitting device 100.

The light emitting device package according to the embodiment may be applied to an illumination system. The lighting system includes a lighting unit shown in FIG. 13 and a back light unit shown in FIG. 14, and may include a traffic light, a vehicle headlight, a signboard, and the like.

13 is a perspective view 1100 of a lighting unit according to an embodiment.

Referring to FIG. 13, a lighting unit 1100, a lighting unit 1100, a light emitting module unit 1130 installed in the case body 1110, and a connection terminal installed in the case body 1110 and receiving power from an external power source ( 1120).

The case body 1110 is preferably formed of a material having good heat dissipation characteristics, for example, may be formed of a metal material or a resin material.

The light emitting module unit 1130 may include a substrate 1132 and at least one light emitting device package 210 mounted on the substrate 1132.

The substrate 1132 may have a circuit pattern printed on an insulator, and for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, or the like may be used. It may include.

In addition, the substrate 1132 may be formed of a material that reflects light efficiently, or the surface of the substrate 1132 may be formed of a color that reflects light efficiently, for example, white, silver, or the like.

The at least one light emitting device package 210 may be mounted on the substrate 1132. Each of the light emitting device packages 210 may include at least one light emitting diode (LED) 100. The light emitting diode 100 may include a colored light emitting diode emitting red, green, blue or white colored light, and a UV light emitting diode emitting ultraviolet (UV) light.

The light emitting module unit 1130 may be arranged to have a combination of various light emitting device packages 210 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1120 may be electrically connected to the light emitting module unit 1130 to supply power. According to FIG. 13, the connection terminal 1120 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1120 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

14 is an exploded perspective view 1200 of a backlight unit according to an embodiment.

The backlight unit 1200 according to the embodiment includes a light guide plate 1210, a light emitting module unit 1240 that provides light to the light guide plate 1210, a reflective member 1220 and a light guide plate 1210 under the light guide plate 1210. The bottom cover 1230 accommodates the light emitting module unit 1240 and the reflective member 1220, but is not limited thereto.

The light guide plate 1210 serves to diffuse surface light to make a surface light source. The light guide plate 1210 is made of a transparent material, for example, acrylic resins such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN) resin. It may include one of the.

The light emitting module unit 1240 provides light to at least one side of the light guide plate 1210, and ultimately serves as a light source of a display device in which the backlight unit is installed.

The light emitting module unit 1240 may be in contact with the light guide plate 1210, but is not limited thereto. Specifically, the light emitting module unit 1240 includes a substrate 1242 and a plurality of light emitting device packages 210 mounted on the substrate 1242, but the substrate 1242 may be in contact with the light guide plate 1210. It is not limited.

The substrate 1242 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1242 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB), and the like, but is not limited thereto.

In addition, the plurality of light emitting device packages 200 may be mounted on the substrate 1242 such that a light emitting surface on which light is emitted is spaced apart from the light guide plate 1210 by a predetermined distance.

The reflective member 1220 may be formed under the light guide plate 1210. The reflective member 1220 may improve the luminance of the backlight unit by reflecting the light incident on the lower surface of the light guide plate 1210 upward. The reflective member 1220 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto.

The bottom cover 1230 may accommodate the light guide plate 1210, the light emitting module unit 1240, the reflective member 1220, and the like. To this end, the bottom cover 1230 may be formed in a box shape having an upper surface opened, but is not limited thereto.

The bottom cover 1230 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding.

According to the light emitting device, the light emitting device package, and the lighting system according to the embodiment, an n-type gallium nitride layer (n-type GaN) is formed by using a current diffusion layer composed of a single layer of an undoped gallium nitride layer used in the prior art. layer and an undoped GaN layer to convert to a laminated structure to provide a current diffusion function, while reducing the operating voltage (Vf), it is possible to increase the brightness.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (11)

A first conductive semiconductor layer;
A current diffusion layer on the first conductivity type semiconductor layer;
An active layer on the current spreading layer; And
A second conductivity type semiconductor layer on the active layer,
The current diffusion layer includes a superlattice layer having a first layer and a second layer of at least one superlattice structure. The method according to claim 1,
The first layer comprises an undoped gallium nitride layer,
The second layer includes an indium gallium nitride layer doped with an n-type impurity (N doped InGaN layer) or an aluminum gallium nitride layer (N doped AlInGaN layer) doped with an n-type impurity. The method of claim 2,
The thickness of the current diffusion layer is a light emitting device of 50nm to 200nm. The method of claim 2,
Wherein the thickness of the first layer is thicker than the thickness of the second layer. 5. The method of claim 4,
The thickness of the first layer
A light emitting device that exceeds the thickness of the second layer and is no more than five times the thickness of the second layer. The method according to any one of claims 2 to 5,
The impurity doped in the second layer is a light emitting device Si. The method of claim 6,
The concentration of Si is 1.0x10 18 atoms / cm 3 to 2.0x10 18 atoms / cm 3 Phosphorescent light emitting element. The method according to claim 1,
Between the current spreading layer and the first conductive semiconductor layer,
And a first conductivity type electron injection layer of the same conductivity type as the first conductivity type semiconductor layer. The method of claim 8,
The first conductivity type semiconductor layer and the first conductivity type electron injection layer are doped with the same conductivity type impurities, and the concentration of the impurities doped in the electron injection layer is the concentration of impurities in the first conductivity type semiconductor layer. Higher light emitting element. The method of claim 8,
Under the active layer,
A light emitting device further comprising a strain control layer. The method of claim 10,
Wherein the strain control layer is a superlattice layer having a superlattice structure of at least six first InGaN and second InGaN having different In concentrations.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150131526A (en) * 2014-05-15 2015-11-25 엘지이노텍 주식회사 Light emitting device and ultraviolet light emitting device package having the same
CN105869994A (en) * 2016-04-14 2016-08-17 湘能华磊光电股份有限公司 Growth method for superlattice layer and LED epitaxial structure comprising superlattice layer
CN105870282A (en) * 2016-04-14 2016-08-17 湘能华磊光电股份有限公司 Growth method for current expansion layer and LED epitaxial structure comprising current expansion layer
US10008633B2 (en) 2014-08-04 2018-06-26 Lg Innotek Co., Ltd. Light-emitting diode and lighting system
CN114613890A (en) * 2022-03-24 2022-06-10 淮安澳洋顺昌光电技术有限公司 Light-emitting diode epitaxial structure with N-type current expansion layer

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150131526A (en) * 2014-05-15 2015-11-25 엘지이노텍 주식회사 Light emitting device and ultraviolet light emitting device package having the same
US10008633B2 (en) 2014-08-04 2018-06-26 Lg Innotek Co., Ltd. Light-emitting diode and lighting system
CN105869994A (en) * 2016-04-14 2016-08-17 湘能华磊光电股份有限公司 Growth method for superlattice layer and LED epitaxial structure comprising superlattice layer
CN105870282A (en) * 2016-04-14 2016-08-17 湘能华磊光电股份有限公司 Growth method for current expansion layer and LED epitaxial structure comprising current expansion layer
CN105869994B (en) * 2016-04-14 2018-04-06 湘能华磊光电股份有限公司 A kind of growing method of superlattice layer and the LED epitaxial structure containing this structure
CN114613890A (en) * 2022-03-24 2022-06-10 淮安澳洋顺昌光电技术有限公司 Light-emitting diode epitaxial structure with N-type current expansion layer
CN114613890B (en) * 2022-03-24 2023-10-20 淮安澳洋顺昌光电技术有限公司 Light-emitting diode epitaxial structure with N-type current expansion layer

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