CN114613890A - Light-emitting diode epitaxial structure with N-type current expansion layer - Google Patents

Light-emitting diode epitaxial structure with N-type current expansion layer Download PDF

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CN114613890A
CN114613890A CN202210294401.7A CN202210294401A CN114613890A CN 114613890 A CN114613890 A CN 114613890A CN 202210294401 A CN202210294401 A CN 202210294401A CN 114613890 A CN114613890 A CN 114613890A
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CN114613890B (en
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刘康
展望
芦玲
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Huaian Aucksun Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

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Abstract

The invention discloses a light emitting diode epitaxial structure with an N-type current expansion layer structure, which comprises a substrate, a buffer layer, a U-shaped semiconductor layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are grown on a lower lug, wherein the N-type semiconductor layer comprises a first N-type semiconductor layer, a first N-type current expansion layer and a second N-type semiconductor layer which are grown from bottom to top, and the N-type current expansion layer comprises a lightly-doped Si Al layer which is grown from bottom to topxGa1‑xN-layer, superheavy doped Si N-typeGaN layer, low Si-doped AlxInyGa(1‑x‑y)And the N/GaN superlattice layer. By adding Al lightly doped with SixGa1‑xAnd the N layer enables the high-energy level barrier action of Al in the N layer to restrict the flow direction of electrons and promote the electrons to expand laterally. The problems of insufficient current expansion, high voltage and large electric leakage of an N-type semiconductor layer when the N-type semiconductor layer is used as a chip electrode are solved. The effects of increasing current expansion and reducing voltage are achieved.

Description

Light-emitting diode epitaxial structure with N-type current expansion layer
Technical Field
The invention relates to the field of semiconductor illumination, in particular to a light-emitting diode with a novel composite electron blocking layer and a preparation method thereof.
Background
The light-emitting diode has the advantages of energy conservation, environmental protection, flexible design, long service life and the like, and is rapidly developed in recent years. Especially, the success of the semiconductor LED technology of III-V group nitride in the blue light field directly promotes LED illumination to enter thousands of households. The structure of the light emitting diode chip in the prior art is as follows: the semiconductor device comprises a substrate, a buffer layer, a U-type semiconductor, an N-type semiconductor, an active layer and a P-type semiconductor which are grown from bottom to top. Under the effect of an external electric field, electrons and holes are compounded, but the current flows to a P electrode from an N electrode and deviates to a closer route, so that the current density of a part of the current is overlarge, and then the current crowding phenomenon is formed, the current of the whole epitaxial layer is unevenly distributed, the forward working voltage of the LED is higher, and the luminous efficiency is lower.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides the light emitting diode epitaxial structure with the N-type current expansion layer, the N-type current expansion layer structure is added in the middle of the N-type semiconductor structure, so that the current distribution of the epitaxial layer is more uniform, and the problems of insufficient current expansion, high voltage and large electric leakage of the N-type semiconductor layer as a chip electrode are solved. The effects of increasing current expansion, reducing voltage and improving reverse leakage are achieved, and brightness is improved.
The invention is realized by the following technical scheme:
the light-emitting diode epitaxial structure with the N-type current expansion layer comprises a substrate (10), a buffer layer (20), a U-type semiconductor layer (30), an N-type semiconductor layer, an active layer (50) and a P-type semiconductor layer (60) which grow from bottom to top, wherein the N-type semiconductor layer comprises a first N-type semiconductor layer (41), an N-type current expansion layer (70) and a second N-type semiconductor layer (42), the first N-type semiconductor layer (41), the second N-type semiconductor layer (70) and the second N-type semiconductor layer (42) grow from bottom to top, and the N-type current expansion layer (70) comprises Al which grows from bottom to top and is lightly doped with SixGa1-xN layer (71) being overweightAn Si-doped N-type GaN layer (72), and Si-lightly-doped AlxInyGa(1-x-y)An N/GaN superlattice layer (73); wherein, AlxGa1-xIn the N layer (71), wherein, 0.05<x<0.2；AlxInyGa(1-x-y)In the N/GaN superlattice layer (73), 0.05<x<0.2， 0.02<y<0.2。
Further: the Al isxInyGa(1-x-y)The N/GaN superlattice layer comprises Al which is cyclically superposedxInyGa(1-x-y)An N sublayer and a GaN sublayer.
Further: the Al isxGa1-xThe thickness of the N layer is 20 nm-50 nm, and the concentration range of the doped Al is 2E03cm-3~4E04cm-3Al component in the range of 0.05<x<0.2, the concentration range of doped Si is 5E18cm-3~2E19cm-3。
Further: the thickness of the N-type GaN layer is 200 nm-500 nm, and the Si doping range is 1E20cm-3~1E21 cm-3。
Further: the Al isxInyGa(1-x-y)The thickness of the N/GaN superlattice layer is 100 nm-500 nm; the concentration range of Si doping is 5e18cm-3~2e19cm-3。
Further: single layer of AlxInyGa(1-x-y)The thickness of the N sublayer (731) is 20 nm-50 nm, and the concentration range of the doped Al is 2E03cm-3~4E04cm-3The concentration range of doped In is 1E02cm-3~4E02cm-3In component range of 0.02<y<0.2。
Further: the thickness of the single GaN sublayer (732) is 10 nm-40 nm.
The invention also provides a light-emitting diode with a light-emitting diode epitaxial structure with an N-type current expansion layer, wherein a P electrode is arranged on the P-type semiconductor layer; and etching the light emitting diode chip to the N-type GaN layer, and arranging an N electrode on the N-type GaN layer.
The invention also provides a method for preparing the light-emitting diode epitaxial structure with the N-type current expansion layer, which comprises the following steps: the method comprises the following steps:
step 1: a buffer layer 20 grows on a substrate 10, the temperature is 600-850 ℃, and the pressure is 100-500 torr.
Step 2: continuing to grow the U-shaped semiconductor layer 30 on the buffer layer, wherein the layer grows in a three-dimensional longitudinal mode by taking the nucleation island as a center, and finally merging the nucleation islands; the temperature is 1050 DEG to 1150 DEG, and the pressure is 100torr to 300 torr.
And step 3: and continuously growing the N-type semiconductor layer I on the U-type semiconductor layer at the temperature of 1000-1100 ℃ and the pressure of 100-300 torr.
And 4, step 4: growing Al on the N-type semiconductor layerxGa1-xN layer of AlxGa1-xThe growth thickness of the N layer is 20 nm-50 nm, and the concentration range of the doped Al is 2E03cm-3~4E04cm-3Al component in the range of 0.05<x<0.2。
And 5: in AlxGa1-xAn N-type GaN layer grows on the N layer, the growth thickness of the N-type GaN layer is 200 nm-500 nm, and the Si doping range is 1E20cm-3~1E21cm-3。
Step 6: growing Al on N-type GaN layerxInyGa(1-x-y)N/GaN superlattice layer, the AlxInyGa(1-x-y)The growth thickness of the N/GaN superlattice layer is 100 nm-500 nm; the concentration range of Si doping is 5E18cm-3~2E19cm-3。
And 7: in the presence of AlxInyGa(1-x-y)And growing an N-type semiconductor layer II on the N/GaN superlattice layer at the temperature of 1000-1100 ℃ and under the pressure of 100-300 torr.
And 8: growing an active layer on the N-type semiconductor layer II to form a multi-quantum well layer; the temperature is 770-810 DEG, and the pressure is 100-300 torr.
And step 9: and growing a P-type semiconductor layer on the active layer at the temperature of 900-1010 ℃ and the pressure of 100-300 torr.
Further: in step 6, AlxInyGa(1-x-y)The growth mode of the N/GaN superlattice layer is AlxInyGa(1-x-y)And the N sublayers and the GaN sublayers alternately grow in an overlapping mode, wherein the number of alternation is 1-10.
The invention has the beneficial effects that:
one, by adding Al lightly doped with SixGa1-xAnd the N layer enables the high-energy level barrier action of Al in the N layer to restrict the flow direction of electrons and promote the electrons to expand laterally. The problems of insufficient current expansion, high voltage and large electric leakage of an N-type semiconductor layer when the N-type semiconductor layer is used as a chip electrode are solved. The effects of increasing current expansion and reducing voltage are achieved.
And the extra-heavy doped Si enables the N-type GaN layer to form extremely small resistance so as to reduce contact resistance and promote current expansion.
Al with low doped SixInyGa(1-x-y)In the N/GaN superlattice layer, AlxInyGa(1-x-y)Al atoms in the N sublayer are small, and dislocation can be bent due to lattice mismatch caused by the displacement effect of the Al atoms and defects can be annihilated at the interface, so that the defects caused by the overweight doped Si in the upper N-type GaN layer can be effectively blocked; lower In level, AlxInyGa(1-x-y)The In component In the N sublayer can effectively reduce the problem of overhigh energy level caused by doping Al and promote the current to flow towards the active region; due to the influence of the N-type GaN layer heavily doped with Si, Al growsxInyGa(1-x-y)And a GaN sublayer with low doped Si is grown at the interface of the N sublayer to release stress due to the fact that larger stress is easily generated due to lattice mismatching.
Drawings
FIG. 1 is a schematic view of an epitaxial structure of a light emitting diode with an N-type current spreading layer according to the present invention;
FIG. 2 shows Al in the present inventionxInyGa(1-x-y)A structural schematic diagram of the N/GaN superlattice layer;
fig. 3 is a schematic structural diagram of a light emitting diode with an epitaxial structure of the light emitting diode having an N-type current spreading layer according to the present invention.
In the figure:
10. a substrate; 20. a buffer layer; 30. a U-shaped semiconductor layer; 41. a first N-type semiconductor layer; 42. a second N-type semiconductor layer; 50. an active layer; 60. a P-type semiconductor layer; 70.an N-type current spreading layer; 71. al (aluminum)xGa1-xN layers; 72. an N-type GaN layer; 73. al (aluminum)xInyGa(1-x-y)An N/GaN superlattice layer; 731. al (Al)xInyGa(1-x-y)N sublayers; 732. a GaN sublayer; 81. a P electrode; 82: and an N electrode.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must be lifted to a specific orientation, constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
As shown in fig. 1 to 3:
a light emitting diode epitaxial structure with an N-type current expansion layer comprises a substrate 10, a buffer layer 20, a U-shaped semiconductor layer 30, an N-type semiconductor layer, an active layer 50 and a P-type semiconductor layer 60 which grow from the upper part of the lower ear, wherein the N-type semiconductor layer comprises a first N-type semiconductor layer 41, an N-type current expansion layer 70 and a second N-type semiconductor layer 42 which grow from bottom to top, and the N-type current expansion layer 70 comprises Al which grows from bottom to top and is lightly doped with SixGa1-xN layer 71, extra heavy Si-doped N-type GaN layer 72, and low Si-doped AlxInyGa(1-x-y)N/GaN superlattice layer 73, AlxInyGa(1-x-y)The N/GaN superlattice layer 73 includes cyclically stacked AlxInyGa(1-x-y)An N sublayer 731 and a GaN sublayer 732.
AlxGa1-xThe thickness of the N layer 71 is 20 nm-50 nm, 35nm is selected in the embodiment, and the concentration range of the doped Al is 2E03cm-3~4E04cm-3In this embodiment, 1e04cm is selected-3Wherein, 0.05<x<0.2, in the embodiment, 0.1 is selected; the concentration range of doped Si is 5E18cm-3~2E19cm-3In this embodiment, 1E19cm is selected-3。
The thickness of the N-type GaN layer 72 is 200 nm-500 nm, and 350nm is selected in the embodiment; the doping range of Si is 1E20cm-3~1E21cm-3In this embodiment, 2E20cm is selected-3。
The thickness of the 73 layer of the AlxInyGa (1-x-y) N/GaN superlattice is 100 nm-500 nm, 300nm is selected in the embodiment, and the concentration range of Si doping is 5E18cm-3~2E19cm-3In this embodiment, 1E19cm is selected-3。
The thickness of the single-layer AlxInyGa (1-x-y) N sublayer 731 is 20 nm-50 nm, in the embodiment, 35nm is selected, and the concentration range of doped Al is 2E03cm-3~4E04cm-3In this embodiment, 1E04cm is selected-3Wherein, 0.05<x<0.2, 0.1 In this example, the In concentration range is 1E02cm-3~4E02cm-3In this embodiment, 2E02 cm is selected-3Wherein, 0.02<y<0.2, 0.06 in the embodiment; the thickness of the single GaN sublayer 732 is 10 nm-40 nm, and 25nm is selected in the embodiment; .
The light emitting diode epitaxial structure with the N-type current expansion layer is prepared by the following steps:
step 1: a buffer layer 20 grows on a substrate 10, the temperature is 600-850 ℃, and the pressure is 100-500 torr.
Step 2: continuing to grow a U-shaped semiconductor layer 30 on the buffer layer 20, wherein the layer is grown in a three-dimensional longitudinal mode by taking the nucleation islands as centers, and finally merging the nucleation islands; the temperature is 1050 DEG to 1150 DEG, and the pressure is 100torr to 300 torr.
And 3, step 3: and continuously growing the N-type semiconductor layer I41 on the U-type semiconductor layer 30 at the temperature of 1000-1100 ℃ and the pressure of 100-300 torr.
And 4, step 4: growing Al on the N-type semiconductor layer one 41xGa1-xN layer 71, AlxGa1-xThe growth thickness of the N layer 71 is 20 nm-50 nm, and the concentration range of the doped Al is 2E03cm-3~4E04cm-3Al component in the range of 0.05<x<0.2。
And 5: in AlxGa1-xAn N-type GaN layer 72 grows on the N layer 71, the thickness of the N-type GaN layer 72 is 200 nm-500 nm, and the Si doping range is 1E20cm-3~1E21cm-3。
Step 6: growing Al on the N-type GaN layer 72xInyGa(1-x-y)N/GaN superlattice layer 73, the AlxInyGa(1-x-y)The growth thickness of the N/GaN superlattice layer 73 is 100 nm-500 nm; the concentration range of Si doping is 5E18cm-3~2E19cm-3，AlxInyGa(1-x-y)The growth mode of the N/GaN superlattice layer 73 is AlxInyGa(1-x-y)The N sublayers 731 and the GaN sublayers 732 alternately grow in an overlapping mode, and the number of the alternate times is 1-10.
And 7: in AlxInyGa(1-x-y)And growing a second N-type semiconductor layer 42 on the N/GaN superlattice layer 73 at the temperature of 1000-1100 ℃ and under the pressure of 100-300 torr.
And 8: growing an active layer 50 on the second N-type semiconductor layer 42 to form a multiple quantum well layer; the temperature is 770-810 DEG, and the pressure is 100-300 torr.
And step 9: and growing a P-type semiconductor layer 60 on the active layer 50 at the temperature of 900-1010 ℃ and the pressure of 100-300 torr.
Preparing a light-emitting diode by using the light-emitting diode epitaxial structure with the N-type current expanding layer, wherein the light-emitting diode wraps the structure, and a P electrode 81 is arranged on the P-type semiconductor layer 60; the light emitting diode chip is etched to the N-type GaN layer 72, and an N-electrode 82 is disposed on the N-type GaN layer 72.
By adding Al lightly doped with SixGa1-x The N layer 71 is formed such that the high energy level barrier effect of Al in this layer constrains the direction of flow of electrons, causing them to expand laterally. Solves the problems of insufficient current expansion and electricity existing in the process of using an N-type semiconductor layer as a chip electrodeHigh voltage and large leakage. The effects of increasing current expansion and reducing voltage are achieved. The super-heavy doped Si in the super-heavy doped Si N-type GaN layer 72 makes this layer form a very small resistance to reduce the contact resistance and promote current spreading. Al low doped with SixInyGa(1-x-y)In the N/GaN superlattice layer 73, AlxInyGa(1-x-y)The Al atoms in the N sublayer 731 are small, and the dislocation can be bent due to lattice mismatch caused by the displacement effect of the Al atoms, and the defects are annihilated at the interface, so that the defects caused by the overweight doped Si in the upper N-type GaN layer 72 can be effectively blocked; lower In level, AlxInyGa(1-x-y)The In component In the N sublayer 731 can effectively reduce the problem of overhigh energy level caused by doping Al and promote the current to flow towards the active region; al is grown due to the influence of the extra heavy Si-doped N-type GaN layer 72xInyGa(1-x-y)A layer of GaN sublayer 732 with low doped Si is grown at the interface of N sublayer 731 to release the stress, which is likely to generate larger stress due to lattice mismatch.
The above embodiments are merely illustrative of the technical concepts and features of the present invention, and the purpose of the embodiments is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.

Claims (10)

1. An LED epitaxial structure with an N-type current spreading layer comprises a substrate (10), a buffer layer (20), a U-type semiconductor layer (30), an N-type semiconductor layer, an active layer (50) and a P-type semiconductor layer (60) which are grown from bottom to top, and is characterized in that: the N-type semiconductor layer comprises a first N-type semiconductor layer (41), an N-type current expanding layer (70) and a second N-type semiconductor layer (42) which grow from bottom to top, and the N-type current expanding layer (70) comprises Al which grows from bottom to top and is lightly doped with SixGa1-xAn N layer (71), an extra heavy Si-doped N-type GaN layer (72), and a low Si-doped Al layerxInyGa(1-x-y)N/GaN superlattice layer (73)(ii) a Wherein, AlxGa1-xIn the N layer (71), wherein, 0.05<x<0.2；AlxInyGa(1-x-y)In the N/GaN superlattice layer (73), 0.05<x<0.2，0.02<y<0.2。
2. The epitaxial structure of the light emitting diode with the N-type current spreading layer as claimed in claim 1, wherein: the Al isxInyGa(1-x-y)The N/GaN superlattice layer (73) includes cyclically stacked AlxInyGa(1-x-y)An N sublayer (731) and a GaN sublayer (732).
3. The epitaxial structure of the light emitting diode with the N-type current spreading layer as claimed in claim 1, wherein: the Al isxGa1-xThe thickness of the N layer (71) is 20 nm-50 nm, and the concentration range of the doped Al is 2E03cm-3~4E04cm-3The concentration range of doped Si is 5E18cm-3~2E19cm-3。
4. The epitaxial structure of the light emitting diode with the N-type current spreading layer as claimed in claim 1, wherein: the thickness of the N-type GaN layer (72) is 200 nm-500 nm, and the Si doping range is 1E20cm-3~1E21cm-3。
5. The epitaxial structure of the light emitting diode with the N-type current spreading layer as claimed in claim 1, wherein: the Al isxInyGa(1-x-y)The thickness of the N/GaN superlattice layer (73) is 100 nm-500 nm; the concentration range of Si doping is 5E18cm-3~2E19cm-3。
6. The epitaxial structure of led with N-type current spreading layer according to claim 2, wherein: single layer of AlxInyGa(1-x-y)The thickness of the N sublayer (731) is 20 nm-50 nm, and the concentration range of the doped Al is 2E03cm-3~4E04cm-3Doping with In concentrationIn the range of 1E02cm-3~4E02cm-3In component range of 0.02<y<0.2。
7. The epitaxial structure of led with N-type current spreading layer according to claim 2, wherein: the thickness of the single GaN sublayer (732) is 10 nm-40 nm.
8. A light emitting diode comprising a light emitting diode epitaxial structure with an N-type current spreading layer according to any one of claims 1 to 6, wherein: a P electrode (81) is provided on the P-type semiconductor layer (60); the chip is etched to the position of the N-type GaN layer (72), and an N electrode (82) is arranged on the N-type GaN layer (72).
9. A method of preparing a light emitting diode epitaxial structure with an N-type current spreading layer according to any one of claims 1 to 6, characterized in that: the method comprises the following steps:
step 1: growing a buffer layer (20) on the substrate (10), wherein the temperature is 600-850 ℃ and the pressure is 100-500 torr;
step 2: continuously growing a U-shaped semiconductor layer (30) on the buffer layer (20), wherein the layer is grown in a three-dimensional longitudinal mode by taking the nucleation islands as centers, and finally the nucleation islands are combined; the temperature is 1050-1150 ℃, and the pressure is 100-300 torr;
and step 3: continuously growing a first N-type semiconductor layer (41) on the U-type semiconductor layer (30) at the temperature of 1000-1100 ℃ and the pressure of 100-300 torr;
and 4, step 4: growing Al on the N-type semiconductor layer one (41)xGa1-xN layer (71), AlxGa1-xThe growth thickness of the N layer is 20 nm-50 nm, the temperature is 1000 DEG-1100 DEG, the pressure is 100 torr-300 torr, the concentration range of the doped Al is 2E03cm-3~4E04cm-3Al component in the range of 0.05<x<0.2；
And 5: in AlxGa1-xAn N-type GaN layer (72) grows on the N layer (71), the thickness of the N-type GaN layer (72) is 200 nm-500 nm, the temperature is 1000-1100 degrees, the pressure is 100-300 torr, and Si is doped to a concentrated concentrationDegree range of 1E20cm-3~1E21cm-3；
Step 6: growing Al on the N-type GaN layer (72)xInyGa(1-x-y)N/GaN superlattice layer (73), the AlxInyGa(1-x-y)The growth thickness of the N/GaN superlattice layer (73) is 100 nm-500 nm, the temperature is 1000-1100 ℃, and the pressure is 100-300 torr; the concentration range of Si doping is 5E18cm-3~2E19cm-3；
And 7: in AlxInyGa(1-x-y)Growing an N-type semiconductor layer II (42) on the N/GaN superlattice layer (73), wherein the temperature is 1000-1100 ℃, and the pressure is 100-300 torr;
and 8: growing an active layer (50) on the second N-type semiconductor layer (42) to form a multiple quantum well layer; the temperature is 770-810 ℃, and the pressure is 100-300 torr;
and step 9: a P-type semiconductor layer (60) is grown on the active layer (50) at a temperature of 900 DEG to 1010 DEG and a pressure of 100torr to 300 torr.
10. The method of claim 8, wherein the epitaxial structure of the light emitting diode with the N-type current spreading layer comprises: in step 6, AlxInyGa(1-x-y)The growth mode of the N/GaN superlattice layer (73) is AlxInyGa(1-x-y)The N sublayers (731) and the GaN sublayers (732) are alternately superposed and grown, and the number of the alternation is 1-10.
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