CN105869994B - A kind of growing method of superlattice layer and the LED epitaxial structure containing this structure - Google Patents

A kind of growing method of superlattice layer and the LED epitaxial structure containing this structure Download PDF

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CN105869994B
CN105869994B CN201610231780.XA CN201610231780A CN105869994B CN 105869994 B CN105869994 B CN 105869994B CN 201610231780 A CN201610231780 A CN 201610231780A CN 105869994 B CN105869994 B CN 105869994B
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徐平
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Xiangneng Hualei Optoelectrical Co Ltd
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Abstract

The invention discloses a kind of growing method of superlattice layer, including 10 18 single-pieces of cyclical growth, the single-piece to include In successively from the bottom to topxMg(1‑x)N layers and SixAl(1‑x)N layers or SixAl(1‑x)N and InxMg(1‑x)N layers, wherein：X=0.20 0.25.The invention also discloses a kind of LED epitaxial structure for including above-mentioned superlattice layer.The present invention use superlattice layer, stops that electronics is too fast by N Es-region propagations to luminescent layer as gesture is of heap of stone by the use of GaN high energy band, and what the more crowded electronics of longitudinal propagation ran into GaN energy bands stops that appropriate horizontal proliferation is come；Superlattice layer forms the two-dimensional electron gas of high concentration simultaneously, the lateral transfer rate of two-dimensional electron gas is very high, accelerate the extending transversely of electronics, macroscopically electric current by effectively spread during superlattice layer come, what is improved therewith is that the distribution of luminescent layer electric current becomes uniform, so that the performance of LED each side can get a promotion.

Description

A kind of growing method of superlattice layer and the LED epitaxial structure containing this structure
Technical field
The present invention relates to LED technology field, and in particular to outside a kind of growing method of superlattice layer and the LED containing this structure Prolong structure.
Background technology
At present, LED is a kind of solid state lighting, have small volume, power consumption is low, service life is long, high brightness, environmental protection, heavily fortified point It is Gu the advantages that durable, deep to be liked by consumers in general.While progressively expansion with domestic production LED scale, in the market It is growing day by day to the demand of LED light effect.
The growing method (its structure refers to Fig. 1) of existing LED epitaxial structure comprises the following steps：
The first step, under 1000-1100 DEG C of hydrogen atmosphere, be passed through 100-130L/min H2, keep reaction cavity pressure 100-300mbar (barometric millimeter of mercury), Sapphire Substrate 1 is handled, processing time is 5-10 minutes；
Second step, 500-600 DEG C is cooled to, it is 300-600mbar to keep reaction cavity pressure, and it is 10000- to be passed through flow 20000sccm (it is per minute that sccm refers to standard milliliters) NH3, 50-100sccm TMGa, 100-130L/min H2, blue precious Growth thickness is 20-40nm low temperature buffer layer 2 on stone lining bottom 1；
3rd step, rise temperature are to 1000-1100 DEG C, and it is 300-600mbar to keep reaction cavity pressure, and being passed through flow is 30000-40000sccm NH3, 100-130L/min H2, keeping temperature stably continue 300-500 DEG C, by low temperature buffer layer 2 Corrode into irregular island；
4th step, rise temperature are to 1000-1200 DEG C, and it is 300-600mbar to keep reaction cavity pressure, and being passed through flow is 30000-40000sccm NH3, 200-400sccm TMGa, 100-130L/min H2, continued propagation thickness be 2-4 μm The GaN layer that undopes 3；
The N-type GaN layer 4 of 5th step, growth doping Si, the N-type GaN layer 4 of the doping Si is from the bottom to top successively including the One layer and the second layer, the growth course of the first layer are specifically：Reaction cavity pressure, temperature-resistant is kept, being passed through flow is 30000-60000sccm NH3, 200-400sccm TMGa, 100-130L/min H2, 20-50sccm SiH4, it is lasting raw Long thickness is 3-4 μm of first layer, wherein：Si doping concentration is 5E18-1E19atoms/cm3；The growth of the second layer Process is specifically：Reaction cavity pressure, temperature-resistant is kept, is passed through the NH that flow is 30000-60000sccm3、200-400sccm TMGa, 100-130L/min H2, 2-10sccm SiH4Continued propagation thickness is the 200-400nm second layer, wherein：Si Doping concentration be 5E17-1E18atoms/cm3；
6th step, growth luminescent layer 5, the luminescent layer include 7-15 composite bed of cyclical growth, the composite bed by Under supreme include In successivelyxGa(1-x)Layer 5.1 and GaN layer 5.2, the InxGa(1-x)Layer 5.1 specific growth course be：Keep Reaction cavity pressure is 300-400mbar, temperature is 700-750 DEG C, is passed through the NH that flow is 50000-70000sccm3、20- 40sccm TMGa, 1500-2000sccm TMIn, 100-130L/min N2, growth thickness is 2.5-3.5nm doping In InxGa(1-x)N layers, wherein：X=0.20-0.25, emission wavelength 450-455nm；The growth course of the GaN layer 5.2 is specific It is：Temperature is raised to 750-850 DEG C, it is 300-400mbar to keep reaction cavity pressure, and it is 50000-70000sccm to be passed through flow NH3, 20-100sccm TMGa, 100-130L/min N2, growth thickness is 8-15nm GaN layer；
7th step, holding reaction cavity pressure are 200-400mbar, temperature is 900-950 DEG C, and it is 50000- to be passed through flow 70000sccm NH3, 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl, 1000- 1300sccm Cp2Mg, continued propagation thickness are 50-100nm p-type AlGaN layer 6, wherein：Al doping concentration is 1E20- 3E20atoms/cm3, Mg doping concentration is 1E19-1E20atoms/cm3；
8th step, holding reaction cavity pressure are 400-900mbar, temperature is 950-1000 DEG C, and it is 50000- to be passed through flow 70000sccm NH3, 20-100sccm TMGa, 100-130L/min H2, 1000-3000sccm Cp2Mg, continued propagation Thickness is the 50-200nm p-type GaN layer 7 for mixing magnesium, wherein：Mg doping concentration is 1E19-1E20atoms/cm3；
9th step, 650-680 DEG C is finally cooled to, is incubated 20-30min, is then switched off heating system, closes and give gas system System, furnace cooling.
The N layer CURRENT DISTRIBUTIONs of existing LED epitaxial growths are uneven, cause current crowding N layer resistances to uprise, cause to light Layer CURRENT DISTRIBUTION is uneven, and luminous efficiency is not high.
Therefore, it is badly in need of a kind of new LED epitaxial structure and growing method in industry to solve the deficiencies in the prior art.
The content of the invention
The invention discloses a kind of growing method of superlattice layer, including 10-18 single-piece of cyclical growth, the single-piece Include In successively from the bottom to topxMg(1-x)N layers and SixAl(1-x)N layers or SixAl(1-x)N and InxMg(1-x)N layers：
The InxMg(1-x)The growth step of N layers is specifically：Holding reaction cavity pressure is 750-900mbar, temperature is 1000-1100 DEG C, it is passed through the NH that flow is 40000-50000sccm3, 1000-1200sccm TMIn, 110-130L/min H2And 800-900sccm Cp2Mg, growth thickness are 10-20nm InxMg(1-x)N layers；
The SixAl(1-x)The growth step of N layers is specifically：Holding reaction cavity pressure is 750-900mbar, temperature is 1000-1100 DEG C, it is passed through the NH that flow is 40000-50000sccm3, 110-130L/min H2, 200-250sccm TMAl And 40-55sccm SiH4, growth thickness is 10-20nm SixAl(1-x)N layers, wherein：Si doping concentration is 1E18- 5E18atom/cm3；
Wherein：X=0.20-0.25.
It is preferable in above technical scheme, also include before the growth of the superlattice layer：
Step S1, under 1000-1100 DEG C of hydrogen atmosphere, it is passed through 100-130L/min H2, keep reaction chamber pressure Power 100-300mbar, handle Sapphire Substrate 5-10 minutes；
Step S2,500-600 DEG C is cooled to, it is 300-600mbar to keep reaction cavity pressure, and it is 10000- to be passed through flow 20000sccm NH3, 50-100sccm TMGa and 100-130L/min H2, on a sapphire substrate growth thickness be 20-40nm low temperature buffer layer；
Step S3, temperature is raised to 1000-1100 DEG C, and it is 300-600mbar to keep reaction cavity pressure, and being passed through flow is 30000-40000sccm NH3And 100-130L/min H2, keeping temperature is 300-500 DEG C, and low temperature buffer layer is corroded Into irregular island；
Step S4, temperature is raised to 1000-1200 DEG C, and it is 300-600mbar to keep reaction cavity pressure, and being passed through flow is 30000-40000sccm NH3, 200-400sccm TMGa and 100-130L/min H2, continued propagation thickness is 2-4 μm The GaN layer that undopes；
Step S5, keep reaction chamber pressure and temperature constant, be passed through the NH that flow is 30000-60000sccm3、200- 400sccm TMGa, 100-130L/min H2And 20-50sccm SiH4, continued propagation thickness is 3-4 μm of doping Si N-type GaN individual layers, wherein：Si doping concentration is 5E18-1E19atom/cm3。
It is preferable in above technical scheme, also include after the growth of the superlattice layer：
Step D1, luminescent layer is grown, luminescent layer includes the composite bed that periodicity is 7-15, and the composite bed is from the bottom to top Include In successivelyxGa(1-x)N layers and GaN layer, the InxGa(1-x)The growth course of N layers is：It is 300- to keep reaction cavity pressure 400mbar, temperature are 700-750 DEG C, are passed through the NH that flow is 50000-70000sccm3, 20-40sccm TMGa, 1500- 2000sccm TMIn and 100-130L/min N2, the thickness that In is adulterated in growth is 2.5-3.5nm InxGa(1-x)N layers, Wherein：X=0.20-0.25, emission wavelength 450-455nm；The growth course of the GaN layer is：Temperature is raised to 750-850 DEG C, it is 300-400mbar to keep reaction cavity pressure, is passed through the NH that flow is 50000-70000sccm3, 20-100sccm TMGa and 100-130L/min N2, growth thickness is 8-15nm GaN layer；
Step D2, keep reaction cavity pressure be 200-400mbar, temperature be 900-950 DEG C, it is 50000- to be passed through flow 70000sccm NH3, 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl and 1000- 1300sccm Cp2Mg, continued propagation thickness are 50-100nm p-type AlGaN layer, wherein：Al doping concentration is 1E20- 3E20atom/cm3, Mg doping concentration is 1E19-1E20atom/cm3；
Step D3, keep reaction cavity pressure be 400-900mbar, temperature be 950-1000 DEG C, it is 50000- to be passed through flow 70000sccm NH3, 20-100sccm TMGa, 100-130L/min H2And 1000-3000sccm Cp2Mg, continue Growth thickness is the 50-200nm p-type GaN layer for mixing magnesium, wherein：Mg doping concentration is 1E19-1E20atom/cm3；
Step D4,650-680 DEG C is finally cooled to, 20-30min is incubated, is then switched off heating system, closes and give gas system System, furnace cooling.
The invention also discloses a kind of LED epitaxial structure, the epitaxial structure includes superlattice layer, the superlattice layer bag 10-18 single-piece is included, the single-piece includes In successively from the bottom to topxMg(1-x)N layers and SixAl(1-x)N layers or SixAl(1-x)N and InxMg(1-x)N layers；
The InxMg(1-x)The thickness of N layers is 4-7nm, the SixAl(1-x)The thickness of N layers is 10-20nm；
Wherein：X=0.20-0.25.
It is preferable in above technical scheme, include Sapphire Substrate, low temperature under the superlattice layer successively from the bottom to top Cushion, the GaN layer that undopes and the N-type GaN individual layers for adulterating Si；
The thickness of the low temperature buffer layer is 20-40nm, and the low temperature buffer layer is etched into irregular island；
The thickness of the GaN layer that undopes is 2-4 μm；
The thickness of the N-type GaN individual layers of the doping Si is 3-4 μm.
It is preferable in above technical scheme, luminescent layer, p-type AlGaN layer are also included on the superlattice layer and mixes magnesium P-type GaN layer, the luminescent layer includes the composite bed that periodicity is 7-15, and the composite bed includes successively from the bottom to top InxGa(1-x)N layers and GaN layer, the InxGa(1-x)The thickness of N layers is 2.5-3.5nm, and the thickness of the GaN layer is 8-15nm；
The thickness of the p-type GaN layer is 50-100nm；
The thickness of the p-type GaN layer for mixing magnesium is 50-200nm.
Apply the technical scheme of the present invention, have the following effects that：
1st, new material In (is used using superlattice layerxMg(1-x)N/SixAl(1-x)The superlattice layer that N is formed), utilize GaN High energy band stop that electronics is too fast GaN energy run into by N Es-region propagations to luminescent layer, the more crowded electronics of longitudinal propagation as gesture is of heap of stone The horizontal proliferation that the stop of band is appropriate is come；Superlattice layer (In simultaneouslyxMg(1-x)N/SixAl(1-x)N superlattice layers) formed it is highly concentrated The two-dimensional electron gas of degree, the lateral transfer rate of two-dimensional electron gas is very high, accelerates the extending transversely of electronics, macroscopically electric current passes through Superlattice layer (InxMg(1-x)N/SixAl(1-x)N superlattice layers) when effectively spread come, improve therewith be luminescent layer electricity The distribution of stream becomes uniform, so that the performance of LED each side can get a promotion.
2nd, the inventive method technological process is simplified, and state modulator is convenient, is adapted to industrialized production.
In addition to objects, features and advantages described above, the present invention also has other objects, features and advantages. Below with reference to figure, the present invention is further detailed explanation.
Brief description of the drawings
The accompanying drawing for forming the part of the application is used for providing a further understanding of the present invention, schematic reality of the invention Apply example and its illustrate to be used to explain the present invention, do not form inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 is the schematic diagram of prior art LED epitaxial structure；
Fig. 2 is the schematic diagram of the LED epitaxial structure of the preferred embodiment of the present invention 1；
Wherein, 1, Sapphire Substrate, 2, low temperature buffer layer, 3, undope GaN layer, 4, adulterate Si N-type GaN layer, 4 ', mix Miscellaneous Si N-type GaN individual layers, 5 ', superlattice layer, 5.1 ', InxMg(1-x)N layers, 5.2 ', SixAl(1-x)N layers, 5, luminescent layer, 5.1, InxGa(1-x)N layers, 5.2, GaN layer, 6, p-type AlGaN layer, 7, mix the p-type GaN layer of magnesium.
Embodiment
Embodiments of the invention are described in detail below in conjunction with accompanying drawing, but the present invention can limit according to claim Fixed and covering multitude of different ways is implemented.
Embodiment 1：
Using MOCVD next life long high brightness GaN-based LED, it is specifically：Using high-purity H2Or high-purity N2Or high-purity H2 And high-purity N2Mixed gas as carrier gas, high-purity N H3As N sources, metal organic source trimethyl gallium (TMGa) is used as gallium source, and three Methyl indium (TMIn) is used as indium source, and N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is as silicon source P-type dopant Two luxuriant magnesium (CP2Mg), substrate is sapphire, and reaction pressure is between 70mbar to 900mbar.
A kind of LED epitaxial structure, refer to Fig. 2, including following structure：Include Sapphire Substrate 1, low temperature successively from the bottom to top Cushion 2, the GaN cushions 3 that undope, the N-type GaN individual layers 4 ' for adulterating Si, superlattice layer 5 ', luminescent layer 5, p-type AlGaN layer 6 With the p-type GaN layer 7 for mixing magnesium；
The thickness of the low temperature buffer layer 2 is 20-40nm, and the low temperature buffer layer 2 is etched into irregular island；
The thickness of the GaN layer 3 that undopes is 2-4 μm；
The thickness of the N-type GaN individual layers 4 ' of the doping Si is 3-4 μm；
The superlattice layer 5 ' includes 10 single-pieces, and the single-piece includes In successively from the bottom to topxMg(1-x)N layers 5.1 ' and SixAl(1-x)N layers 5.2 ', the InxMg(1-x)The thickness of N layers 5.1 ' is 4-7nm, the SixAl(1-x)The thickness of N layers 5.2 ' is 10-20nm；Wherein：X=0.20.
The luminescent layer 5 includes the composite bed that periodicity is 7-15, and the composite bed includes successively from the bottom to top InxGa(1-x)N layers 5.1 and GaN layer 5.2, the InxGa(1-x)The thickness of N layers 5.1 is 2.5-3.5nm, the thickness of the GaN layer 5.2 Spend for 8-15nm
The thickness of the p-type GaN layer 6 is 50-100nm；
The thickness of the p-type GaN layer 7 for mixing magnesium is 50-200nm.
The growing method of above-mentioned LED epitaxial structure specifically includes following steps：
The first step, under 1000-1100 DEG C of hydrogen atmosphere, be passed through 100-130L/min H2, keep reaction chamber pressure Power 100-300mbar, Sapphire Substrate 1 is handled, processing time is 5-10 minutes；
Second step, 500-600 DEG C is cooled to, it is 300-600mbar to keep reaction cavity pressure, and it is 10000- to be passed through flow 20000sccm NH3, 50-100sccm TMGa and 100-130L/min H2, growth thickness is in Sapphire Substrate 1 20-40nm low temperature buffer layer 2；
3rd step, rise temperature are to 1000-1100 DEG C, and it is 300-600mbar to keep reaction cavity pressure, and being passed through flow is 30000-40000sccm NH3And 100-130L/min H2, keeping temperature is 300-500 DEG C, and low temperature buffer layer is corroded Into irregular island；
4th step, rise temperature are to 1000-1200 DEG C, and it is 300-600mbar to keep reaction cavity pressure, and being passed through flow is 30000-40000sccm NH3, 200-400sccm TMGa and 100-130L/min H2, continued propagation thickness is 2-4 μm The GaN layer 3 that undopes；
5th step, keep reaction chamber pressure and temperature constant, be passed through the NH that flow is 30000-60000sccm3、200- 400sccm TMGa, 100-130L/min H2And 20-50sccm SiH4, continued propagation thickness is 3-4 μm of doping Si N-type GaN individual layers 4 ', wherein：Si doping concentration is 5E18-1E19atom/cm3；
6th step, growth superlattice layer 5 ', it is specifically：Including 10 single-pieces of cyclical growth, the single-piece is from the bottom to top Include In successivelyxMg(1-x)N layers 5.1 ' and SixAl(1-x)N layers 5.2 '：
The InxMg(1-x)The growth step of N layers is specifically：Holding reaction cavity pressure is 500-750mbar, temperature is 950-1000 DEG C, it is passed through the NH that flow is 50000-55000sccm3, 50-70sccm TMGa, 90-110L/min H2、 1200-1400sccm TMIn and 900-1000sccm Cp2Mg, growth thickness are 4-7nm InxMg(1-x)N layers, wherein： In doping concentration is 3E19-4E19atom/cm3, Mg doping concentration is 1E19-1E20atom/cm3；
The SixAl(1-x)The growth step of N layers is specifically：Holding reaction cavity pressure is 500-750mbar, temperature is 950-1000 DEG C, it is passed through the NH that flow is 50000-55000sccm3, 90-110L/min H2, 100-200sccm TMAl, 20-30sccm SiH4Growth thickness is 10-20nm SixAl(1-x)N layers, wherein：Si doping concentration is 1E18- 5E18atom/cm3；
7th step, growth luminescent layer 5, luminescent layer include the composite bed that periodicity is 7-15, the composite bed by it is lower extremely On include In successivelyxGa(1-x)N layers 5.1 and GaN layer 5.2, the InxGa(1-x)The growth course of N layers 5.1 is：Keep reaction chamber Pressure is 300-400mbar, temperature is 700-750 DEG C, is passed through the NH that flow is 50000-70000sccm3, 20-40sccm TMGa, 1500-2000sccm TMIn and 100-130L/min N2, growth doping In thickness is 2.5-3.5nm's InxGa(1-x)N layers, wherein：X=0.20-0.25, emission wavelength 450-455nm；The growth course of the GaN layer 5.2 is：Rise For high-temperature to 750-850 DEG C, it is 300-400mbar to keep reaction cavity pressure, is passed through the NH that flow is 50000-70000sccm3、 20-100sccm TMGa and 100-130L/min N2, growth thickness is 8-15nm GaN layer；
8th step, holding reaction cavity pressure are 200-400mbar, temperature is 900-950 DEG C, and it is 50000- to be passed through flow 70000sccm NH3, 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl and 1000- 1300sccm Cp2Mg, continued propagation thickness are 50-100nm p-type AlGaN layer 6, wherein：Al doping concentration is 1E20- 3E20atom/cm3, Mg doping concentration is 1E19-1E20atom/cm3；
9th step, holding reaction cavity pressure are 400-900mbar, temperature is 950-1000 DEG C, and it is 50000- to be passed through flow 70000sccm NH3, 20-100sccm TMGa, 100-130L/min H2And 1000-3000sccm Cp2Mg, continue Growth thickness is the 50-200nm p-type GaN layer 7 for mixing magnesium, wherein：Mg doping concentration is 1E19-1E20atom/cm3；
Tenth step, 650-680 DEG C is finally cooled to, is incubated 20-30min, is then switched off heating system, closes and give gas system System, furnace cooling.
Embodiment 2：
Difference from Example 1 is only that：The superlattice layer 5 ' includes 10 single-pieces, the single-piece from the bottom to top according to It is secondary including SixAl(1-x)N and InxMg(1-x)N layers, wherein：X=0.20.
Embodiment 3：
Difference from Example 1 is only that：The superlattice layer 5 ' includes 15 single-pieces.
Embodiment 4：
Difference from Example 1 is only that：The superlattice layer 5 ' includes 18 single-pieces.
Sample 1 is made according to existing LED growing method (referring to background technology), according to the inventive method (embodiment Sample 2, sample 3, sample 4 and sample 5 1-4) is made, sample 2 and sample 3 and the parameter comparison of prior art refer to table 1 (from sample 2 comparatively, the number of plies of only superlattice layer is different, other technological parameters are consistent for sample 4 and sample 5, therefore omit List)：
The sample 1-2 of table 1 and prior art parameter comparison table
Sample 1-5 is plated into ITO layer about 150nm before identical under process conditions, plates Cr/Pt/Au electricity under the same conditions Pole about 1500nm, under the same conditions plating SiO2About 100nm, then under the same conditions by sample grinding and cutting into The chip particle of 635 μm * 635 μm (25mil*25mil), then sample 1-5 each select 100 crystal grain in same position, Under identical packaging technology, white light LEDs are packaged into.Then integrating sphere test sample 1-5 under the conditions of driving current 350mA is used Photoelectric properties, refer to table 2：
The comparison of the sample 1-5 product electrical parameters of table 2
As known from Table 2：The data that integrating sphere obtains are subjected to analysis contrast, compared with sample 1 (prior art), the present invention Gained sample 2-5 LED light effect improves, all other LED electrical parameters also improve, and therefore, the present invention uses superlattice layer 5 ' Design, stop that electronics is too fast more crowded by N Es-region propagations to luminescent layer, longitudinal propagation by the use of GaN high energy band as gesture is of heap of stone Electronics run into GaN can the appropriate horizontal proliferation of stop of band come；Superlattice layer (In simultaneouslyxMg(1-x)N/SixAl(1-x)N surpasses Lattice layer) two-dimensional electron gas of high concentration is formed, the lateral transfer rate of two-dimensional electron gas is very high, accelerates the horizontal expansion of electronics Exhibition, macroscopically electric current passes through superlattice layer (InxMg(1-x)N/SixAl(1-x)N superlattice layers) when effectively spread come, therewith What is improved is that the distribution of luminescent layer electric current becomes uniform, so that the performance of LED each side can get a promotion.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for the skill of this area For art personnel, the present invention can have various modifications and variations.Within the spirit and principles of the invention, that is made any repaiies Change, equivalent substitution, improvement etc., should be included in the scope of the protection.

Claims (6)

  1. A kind of 1. growing method of superlattice layer, it is characterised in that including 10-18 single-piece of cyclical growth, the single-piece by Under supreme include In successivelyxMg(1-x)N layers and SixAl(1-x)N layers or SixAl(1-x)N and InxMg(1-x)N layers：
    The InxMg(1-x)The growth step of N layers is specifically：Holding reaction cavity pressure is 750-900mbar, temperature 1000- 1100 DEG C, it is passed through the NH that flow is 40000-50000sccm3, 1000-1200sccm TMIn, 110-130L/min H2And 800-900sccm Cp2Mg, growth thickness are 10-20nm InxMg(1-x)N layers；
    The SixAl(1-x)The growth step of N layers is specifically：Holding reaction cavity pressure is 750-900mbar, temperature 1000- 1100 DEG C, it is passed through the NH that flow is 40000-50000sccm3, 110-130L/min H2, 200-250sccm TMAl and 40-55sccm SiH4, growth thickness is 10-20nm SixAl(1-x)N layers, Si doping concentration is 1E18-5E18atom/ cm3；
    Wherein：X=0.20-0.25.
  2. 2. the growing method of superlattice layer according to claim 1, it is characterised in that before the growth of the superlattice layer Also include：
    Step S1, under 1000-1100 DEG C of hydrogen atmosphere, it is passed through 100-130L/min H2, keep reaction cavity pressure 100- 300mbar, handle Sapphire Substrate (1) 5-10 minutes；
    Step S2,500-600 DEG C is cooled to, it is 300-600mbar to keep reaction cavity pressure, and it is 10000- to be passed through flow 20000sccm NH3, 50-100sccm TMGa and 100-130L/min H2, the growth thickness in Sapphire Substrate (1) For 20-40nm low temperature buffer layer (2)；
    Step S3, temperature is raised to 1000-1100 DEG C, and it is 300-600mbar to keep reaction cavity pressure, and it is 30000- to be passed through flow 40000sccm NH3And 100-130L/min H2, low temperature buffer layer is corroded into irregular island；
    Step S4, temperature is raised to 1000-1200 DEG C, and it is 300-600mbar to keep reaction cavity pressure, and it is 30000- to be passed through flow 40000sccm NH3, 200-400sccm TMGa and 100-130L/min H2, continued propagation thickness is 2-4 μm and do not mix Miscellaneous GaN layer (3)；
    Step S5, keep reaction chamber pressure and temperature constant, be passed through the NH that flow is 30000-60000sccm3、200-400sccm TMGa, 100-130L/min H2And 20-50sccm SiH4, continued propagation thickness is 3-4 μm of doping Si N-type GaN Individual layer (4 '), wherein：Si doping concentration is 5E18-1E19atom/cm3。
  3. 3. the growing method of superlattice layer according to claim 2, it is characterised in that after the growth of the superlattice layer Also include：
    Step D1, luminescent layer is grown, luminescent layer includes the composite bed that periodicity is 7-15, and the composite bed is from the bottom to top successively Including InxGa(1-x)N layers (5.1) and GaN layer (5.2), the InxGa(1-x)The growth course of N layers (5.1) is：Keep reaction chamber Pressure is 300-400mbar, temperature is 700-750 DEG C, is passed through the NH that flow is 50000-70000sccm3, 20-40sccm TMGa, 1500-2000sccm TMIn and 100-130L/min N2, growth doping In thickness is 2.5-3.5nm's InxGa(1-x)N layers, wherein：X=0.20-0.25, emission wavelength 450-455nm；The growth course of the GaN layer (5.2) is： Temperature is raised to 750-850 DEG C, it is 300-400mbar to keep reaction cavity pressure, and it is 50000-70000sccm's to be passed through flow NH3, 20-100sccm TMGa and 100-130L/min N2, growth thickness is 8-15nm GaN layer；
    Step D2, keep reaction cavity pressure be 200-400mbar, temperature be 900-950 DEG C, it is 50000- to be passed through flow 70000sccm NH3, 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl and 1000- 1300sccm Cp2Mg, continued propagation thickness are 50-100nm p-type AlGaN layer (6), wherein：Al doping concentration is 1E20-3E20atom/cm3, Mg doping concentration is 1E19-1E20atom/cm3；
    Step D3, keep reaction cavity pressure be 400-900mbar, temperature be 950-1000 DEG C, it is 50000- to be passed through flow 70000sccm NH3, 20-100sccm TMGa, 100-130L/min H2And 1000-3000sccm Cp2Mg, continue Growth thickness is the 50-200nm p-type GaN layer (7) for mixing magnesium, wherein：Mg doping concentration is 1E19-1E20atom/cm3；
    Step D4,650-680 DEG C is finally cooled to, 20-30min is incubated, is then switched off heating system, closes and give gas system, with Stove cools down.
  4. 4. a kind of LED epitaxial structure, it is characterised in that the epitaxial structure includes superlattice layer (5 '), the superlattice layer (5) 10-18 single-piece ' is included, the single-piece includes In successively from the bottom to topxMg(1-x)N layers and SixAl(1-x)N layers or SixAl(1-x)N and InxMg(1-x)N layers；
    The InxMg(1-x)The thickness of N layers is 4-7nm, the SixAl(1-x)The thickness of N layers is 10-20nm；
    Wherein：X=0.20-0.25.
  5. 5. LED epitaxial structure according to claim 4, it is characterised in that under the superlattice layer from the bottom to top successively Including Sapphire Substrate (1), low temperature buffer layer (2), the GaN layer that undopes (3) and the N-type GaN individual layers (4 ') for adulterating Si；
    The thickness of the low temperature buffer layer (2) is 20-40nm, and the growth temperature of the low temperature buffer layer (2) is 500-600 DEG C, The low temperature buffer layer (2) is etched into irregular island；
    The thickness of the GaN layer that undopes (3) is 2-4 μm；
    The thickness of the N-type GaN individual layers (4 ') of the doping Si is 3-4 μm.
  6. 6. LED epitaxial structure according to claim 5, it is characterised in that also include luminescent layer on the superlattice layer (5), p-type AlGaN layer (6) and the p-type GaN layer (7) of magnesium is mixed, it is 7-15 compound that the luminescent layer (5), which includes periodicity, Layer, the composite bed include In successively from the bottom to topxGa(1-x)N layers (5.1) and GaN layer (5.2), the InxGa(1-x)N layers (5.1) thickness is 2.5-3.5nm, and the thickness of the GaN layer (5.2) is 8-15nm；
    The thickness of the p-type AlGaN layer (6) is 50-100nm；
    The thickness of the p-type GaN layer (7) for mixing magnesium is 50-200nm.
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