CN103137795B - A kind of preparation method of GaN base light-emitting diode chip for backlight unit structure cell - Google Patents
A kind of preparation method of GaN base light-emitting diode chip for backlight unit structure cell Download PDFInfo
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- CN103137795B CN103137795B CN201110394814.4A CN201110394814A CN103137795B CN 103137795 B CN103137795 B CN 103137795B CN 201110394814 A CN201110394814 A CN 201110394814A CN 103137795 B CN103137795 B CN 103137795B
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- 238000005530 etching Methods 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 15
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 30
- 229910052594 sapphire Inorganic materials 0.000 claims description 19
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- 238000009776 industrial production Methods 0.000 abstract description 3
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- 230000008901 benefit Effects 0.000 description 4
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Abstract
The invention provides a kind of preparation method of GaN base light-emitting diode chip for backlight unit structure cell, convex PSS makes LED light emitting epitaxial layer, then utilizes photoresist and SiO
2layer, as mask, carries out deep etching by the parameters of control ICP to light emitting epitaxial layer, to form the LED structure cell be separated completely.The structure cell of LED chip that method obtains thus can reach and be separated completely, and, quantity and the size of its structure cell can be determined according to the demand of different input voltage, can be optimized for every structure cell, therefore, it is possible to obtain preferably CURRENT DISTRIBUTION, and then improve luminous efficiency.This method technique is simple, is suitable for industrial production.
Description
Technical field
The present invention relates to a kind of preparation method of light-emitting diode, particularly relate to a kind of preparation method of GaN base light-emitting diode chip for backlight unit structure cell.
Background technology
Semiconductor lighting is as new and effective solid light source, there is the remarkable advantages such as life-span length, energy-saving and environmental protection, safety, by the leap again becoming the mankind and throw light in history after incandescent lamp, fluorescent lamp, its application expands rapidly, just driving the upgrading of the industry such as traditional lighting, display, its economic benefit and social benefit huge.Just because of this, semiconductor lighting is generally regarded as one of new industry that 21 century is most with prospects, is also one of most important commanding elevation of the optoelectronic areas coming years.
For the design of high-capacity LED, current Ge great factory is main mainly with large scale single low pressure, and way has two kinds: a kind of is conventional flat structure, and another kind is then vertical conductive structure.
For conventional flat structure, its processing procedure is almost identical with general small-size chips, both cross-section structures are the same, but be different from small-size chips, large scale high-capacity LED usually needs to drive under big current, if the design of P, N electrode is uneven, serious electric current all can be caused to block up (CurrentCrowding), consequently LED does not reach the brightness of design, and can damage the reliability (reliability) of chip yet.
For vertical conductive structure, because current commercial blue-ray LED is nearly all grow up on sapphire substrate, change vertical conductive structure into, first must do bonding with conduction, the good substrate that dispels the heat, adopt the method for laser lift-off again, nonconducting sapphire is peeled off substantially and removes, complete chip preparation afterwards.Vertical stratification, compared with conventional flat structure, has more uniform CURRENT DISTRIBUTION, also improves heat radiation simultaneously.But the maximum shortcoming of the way of this structure is, making technology complexity improves greatly, and comparatively conventional flat structure is low for yield, and cost of manufacture is high.
Structure cell isolation technology has groove between structure cell and structure cell, the object of groove is independent for multiple structure cell, therefore its beneath trenches needs to reach the substrate of insulation (such as, sapphire substrate GaN base LED, Sapphire Substrate need be reached), its degree of depth according to different epitaxial structures, generally at 4 ~ 15um; The width aspect of groove is then without certain restriction, but groove is too wide, then represent the minimizing of effective light-emitting zone, by the luminous efficiency of impact to voltage LED.
In the prior art, epitaxy technique generally adopts plain film to add roughening process, so just realizes the isolation of structure cell with comparalive ease, and this method, there is larger restriction to the lifting of brightness.And the epitaxy technique technology overwhelming majority adopts the convex PSS of sapphire (PatternedSapphireSubstrate at present; Sapphire wafer carries out patterned surface) substrate, this creates very large difficulty to the isolation of structure cell, because the GaN between the bag of convex PSS and bag is very difficult to etch totally, as shown in Figure 1, if etching is unclean, whole device inside is just caused directly to be communicated with, thus whole component failure.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of preparation method of GaN base light-emitting diode chip for backlight unit structure cell, bag for solving prior art convexity PSS is difficult to etch clean with the GaN between wrapping and causes device inside to be directly communicated with, thus the problem of whole component failure.
For achieving the above object and other relevant objects, the invention provides a kind of preparation method of GaN base light-emitting diode chip for backlight unit structure cell, at least comprise the following steps: 1) provide a surface to have the Sapphire Substrate of multiple bulge-structure, and between adjacent two bulge-structures, there is interval, the extension luminescent layer be made up of GaN material is formed at described sapphire substrate surface; 2) make mask layer and photoresist successively on described extension luminescent layer surface, then carry out photoetching, etching removal unit divides photoresist and mask layer, is formed with the mask stack of specific distance arrangement to make described photoresist and mask layer; 3) using described mask stack as mask, carry out first time etching, remove the extension luminescent layer respectively between this mask stack; Wherein, after described first time etches, described Sapphire Substrate respectively has remaining GaN material between this bulge-structure; 4) using described mask stack as mask, carry out second time etching, remove GaN material respectively remaining between this bulge-structure in described Sapphire Substrate, form separate multiple light-emitting diode chip for backlight unit structure cells; 5) carry out third time etching, remove the defect of described light-emitting diode chip for backlight unit structure cell sidewall surfaces.
In the preparation method of GaN base light-emitting diode chip for backlight unit structure cell of the present invention, described extension luminescent layer at least comprises: u-GaN layer, n-GaN layer, mqw layer and p-GaN layer.
In the preparation method of GaN base light-emitting diode chip for backlight unit structure cell of the present invention, described mask layer is adopt PECVD method to carry out the SiO deposited
2layer, its thickness is 5000 ~ 15000nm.Adopt BOE solution to described SiO
2layer etches.
In the preparation method of GaN base light-emitting diode chip for backlight unit structure cell of the present invention, described step 2) also comprise the step that described mask stack is cleaned and dried.
In the preparation method of GaN base light-emitting diode chip for backlight unit structure cell of the present invention, described first time etches, etching and third time are etched in ICP or RIE etching apparatus and carry out for the second time.
In the preparation method of GaN base light-emitting diode chip for backlight unit structure cell of the present invention, described first time is etched in ICP etching apparatus carries out, and adopts Cl
2, BCl
3mist as etching gas, wherein Cl
2content be 50%-85%, BCl
3content be 5%-10%.Preferably, in described ICP equipment, etching pressure is 0.5 ~ 1pa, Cl
2flow is 25 ~ 35sccm, BCl
3flow is 5 ~ 8sccm, ICP power be 80 ~ 250W, RF substrate bias power is 60 ~ 150W, and etch period is 400 ~ 900 seconds.
In the preparation method of GaN base light-emitting diode chip for backlight unit structure cell of the present invention, described second time is etched in ICP etching apparatus carries out, and adopts Cl
2, BCl
3, Ar mist as etching gas, wherein Cl
2content be 50%-85%, BCl
3content be 5%-10%.Preferably, in described ICP equipment, etching pressure is 0.5 ~ 1pa, Cl
2flow is 25 ~ 40sccm, BCl
3flow is 2 ~ 5sccm, Ar flow be 3 ~ 7sccm, ICP power be 450 ~ 700W, RF substrate bias power is 200 ~ 350W, and etch period is 450 ~ 1000 seconds.
In the preparation method of GaN base light-emitting diode chip for backlight unit structure cell of the present invention, described third time is etched in ICP etching apparatus carries out, and adopts Cl
2and BCl
3mist is as etching gas, and wherein, etching pressure is 0.5 ~ 0.8pa, Cl
2flow is 5 ~ 15sccm, BCl
3flow is 3 ~ 10sccm, ICP power be 200 ~ 350W, RF substrate bias power is 45 ~ 90W, and etch period is 200 ~ 350 seconds.
In the preparation method of GaN base light-emitting diode chip for backlight unit structure cell of the present invention, described step 4) also comprise the step removing described photoresist and mask layer.
As mentioned above, the preparation method of GaN base light-emitting diode chip for backlight unit structure cell of the present invention, there is following beneficial effect: on convex PSS, make LED light emitting epitaxial layer, then utilize photoresist and SiO2 layer as mask, by the parameters of control ICP, light emitting epitaxial layer is etched, to form the LED structure cell be separated completely.The structure cell of LED chip that method obtains thus can reach and be separated completely, and, quantity and the size of its structure cell can be determined according to the demand of different input voltage, can be optimized for every structure cell, therefore, it is possible to obtain preferably CURRENT DISTRIBUTION, and then improve luminous efficiency.This method technique is simple, is suitable for industrial production.
Accompanying drawing explanation
Fig. 1 shows the structural representation in the preparation method of GaN base light-emitting diode chip for backlight unit structure cell of the prior art.
The structural representation that each step of preparation method that Fig. 2 ~ Fig. 6 is shown as GaN base light-emitting diode chip for backlight unit structure cell of the present invention presents.
Element numbers explanation
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 2 to Fig. 6.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
As shown in the figure, the invention provides a kind of preparation method of GaN base light-emitting diode chip for backlight unit structure cell, at least comprise the following steps:
Refer to Fig. 2, as shown in the figure, first carry out step 1), a surface is provided to have the Sapphire Substrate 11 of multiple bulge-structure 111, and between adjacent two bulge-structures 111, there is interval, in the present embodiment, described bulge-structure 111 is arc surface bulge-structure 111, certainly, in other examples, described bulge-structure 111 also can be cone shape bulge-structure or other cone bulge-structure (being such as triangular pyramidal etc.), the extension luminescent layer be made up of GaN material is formed on described Sapphire Substrate 11 surface, in the present embodiment, described extension luminescent layer is standby by metal-organic chemical vapor deposition equipment legal system, certainly, also molecular beam epitaxy or hydride gas-phase epitaxy technology can be adopted to be prepared, in concrete implementation process, u-GaN layer 12 is made at described sapphire substrate surface, n-GaN layer 13 is made on described u-GaN layer 12 surface, mqw layer 14 is made on described n-GaN layer 13 surface, finally make p-GaN layer 15 on described mqw layer 14 surface.
Refer to Fig. 3 ~ Fig. 4, as shown in the figure, then carry out step 2), mask layer 16 and photoresist 17 is made successively on described extension luminescent layer surface, then carry out photoetching, etching removes photoresist 17 and the mask layer 16 of part, is formed with the mask stack 16 and 17 of specific distance arrangement to make described photoresist 17 and mask layer 16, in the present embodiment, PECVD method is adopted to carry out the SiO deposited
2layer, its thickness is 5000 ~ 15000nm, then adopts BOE solution to described SiO
2layer carries out etching to remove described SiO
2layer, also can use BOE and HF to mix and easily etch.Certainly, the material of described mask layer 16 is also can be Si
3n
4, or the combination of one or more metals in Ni, Ti, Cr, Al, Ag, Pt and Au, wherein, described mask layer 16 is Si
3n
4time, adopt BOE solution or hydrofluoric acid to remove; When described mask layer 16 is the combination of one or more metals in Ni, Ti, Cr, Al, Ag, Pt and Au, Ni wherein adopts nitric acid to remove, Ti adopts the concentrated hydrochloric acid of hydrofluoric acid, heat or the concentrated sulfuric acid of heat to remove, Cr adopts the mixed liquor of hydrochloric acid and Cr to remove, Al adopts highly basic or diluted acid to remove, Ag adopts the concentrated sulfuric acid of nitric acid and heat to remove, and Pt, Au adopt chloroazotic acid to remove.Described mask stack 16 and 17 cleans to remove residual impurity to it, and dries it after having prepared.It should be noted that, the spacing size between described mask stack 16 and 17 is determined according to different process conditions and actual demand.
Refer to Fig. 5, as shown in the figure, then carry out step 3), using described mask stack 16 and 17 as mask, carry out first time etching, remove the extension luminescent layer between described mask stack 16 and 17, wherein, after described first time etches, described Sapphire Substrate respectively has remaining GaN material between this bulge-structure 111; Wherein, described first time etching can be carried out in ICP or RIE etching apparatus.In the present embodiment, described first time is etched in ICP etching apparatus carries out, and adopts Cl
2, BCl
3mist as etching gas, wherein Cl
2content be 50%-85%, BCl
3content be 5%-10%.In described ICP equipment, etching pressure is 0.5 ~ 1pa, Cl
2flow is 25 ~ 35sccm, BCl
3flow is 5 ~ 8sccm, ICP power be 80 ~ 250W, RF substrate bias power is 60 ~ 150W, and etch period is 400 ~ 900 seconds.
Refer to Fig. 6, as shown in the figure, then carry out step 4), using described mask stack 16 and 17 as mask, carry out second time etching, remove GaN material respectively remaining between this bulge-structure 111 in described Sapphire Substrate, form separate multiple light-emitting diode chip for backlight unit structure cells; In the present embodiment, described second time is etched in ICP etching apparatus carries out, and adopts Cl
2, BCl
3, Ar mist as etching gas, wherein Cl
2content be 50%-85%, BCl
3content be 5%-10%.In described ICP equipment, etching pressure is 0.5 ~ 1pa, Cl
2flow is 25 ~ 40sccm, BCl
3flow is 2 ~ 5sccm, Ar flow be 3 ~ 7sccm, ICP power be 450 ~ 700W, RF substrate bias power is 200 ~ 350W, and etch period is 450 ~ 1000 seconds.In concrete implementation process, etching pressure is 0.7pa, Cl
2flow is 32sccm, BCl
3flow is 3sccm, Ar flow be 5sccm, ICP power be 500W, RF substrate bias power is 250W, and etch period is 800 seconds.
Finally carry out step 5), carry out third time etching, remove the defect of described light-emitting diode chip for backlight unit structure cell sidewall surfaces.Wherein, described second time etching can be carried out in ICP or RIE etching apparatus, and described defect is mainly etching and second time for the first time and causes the uneven of structure cell sidewall surfaces after etching.Described third time is etched in ICP etching apparatus carries out, and adopts Cl
2and BCl
3mist is as etching gas, and wherein, etching pressure is 0.5 ~ 0.8pa, Cl
2flow is 5 ~ 15sccm, BCl
3flow is 3 ~ 10sccm, ICP power be 200 ~ 350W, RF substrate bias power is 45 ~ 90W, and etch period is 200 ~ 350 seconds.In concrete implementation process, etching pressure is 0.7pa, Cl
2flow is 7.5sccm, BCl
3flow is 5sccm, ICP power be 300W, RF substrate bias power is 60W, and etch period is 300 seconds.Finally remove described photoresist 17 and mask layer 16, complete the preparation of light-emitting diode chip for backlight unit structure cell.
In sum, the preparation method of GaN base light-emitting diode chip for backlight unit structure cell of the present invention makes LED light emitting epitaxial layer on convex PSS, then utilizes photoresist and SiO
2layer, as mask, is etched light emitting epitaxial layer by the parameters of control ICP, to form the LED structure cell be separated completely.The structure cell of LED chip that method obtains thus can reach and be separated completely, and, quantity and the size of its structure cell can be determined according to the demand of different input voltage, can be optimized for every structure cell, therefore, it is possible to obtain preferably CURRENT DISTRIBUTION, and then improve luminous efficiency.This method technique is simple, is suitable for industrial production.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (12)
1. a preparation method for GaN base light-emitting diode chip for backlight unit structure cell, is characterized in that, at least comprises the following steps:
1) provide a surface to have the Sapphire Substrate of multiple bulge-structure, and between adjacent two bulge-structures, there is interval, form the extension luminescent layer be made up of GaN material at described sapphire substrate surface;
2) make mask layer and photoresist successively on described extension luminescent layer surface, then carry out photoetching, etching removal unit divides photoresist and mask layer, is formed with the mask stack of specific distance arrangement to make described photoresist and mask layer;
3) using described mask stack as mask, carry out first time etching, remove the extension luminescent layer respectively between this mask stack; Wherein, after described first time etches, described Sapphire Substrate respectively has remaining GaN material between this bulge-structure;
4) using described mask stack as mask, carry out second time etching, remove GaN material respectively remaining between this bulge-structure in described Sapphire Substrate, form separate multiple light-emitting diode chip for backlight unit structure cells;
5) carry out third time etching, remove the defect of described light-emitting diode chip for backlight unit structure cell sidewall surfaces.
2. the preparation method of GaN base light-emitting diode chip for backlight unit structure cell according to claim 1, is characterized in that: described extension luminescent layer at least comprises: u-GaN layer, n-GaN layer, mqw layer and p-GaN layer.
3. the preparation method of GaN base light-emitting diode chip for backlight unit structure cell according to claim 1, is characterized in that: described mask layer is adopt PECVD method to carry out the SiO deposited
2layer, its thickness is 5000 ~ 15000nm.
4. the preparation method of GaN base light-emitting diode chip for backlight unit structure cell according to claim 3, is characterized in that: adopt BOE solution to described SiO
2layer etches.
5. the preparation method of GaN base light-emitting diode chip for backlight unit structure cell according to claim 1, is characterized in that: described step 2) be also included in described mask stack and prepare the rear step that described mask stack is cleaned and dried.
6. the preparation method of GaN base light-emitting diode chip for backlight unit structure cell according to claim 1, is characterized in that: described first time etches, etching and third time are etched in ICP or RIE etching apparatus and carry out for the second time.
7. the preparation method of GaN base light-emitting diode chip for backlight unit structure cell according to claim 1, is characterized in that: described first time is etched in ICP etching apparatus carries out, and adopts Cl
2, BCl
3mist as etching gas, wherein Cl
2content be 50%-85%, BCl
3content be 5%-10%.
8. the preparation method of GaN base light-emitting diode chip for backlight unit structure cell according to claim 7, is characterized in that: in described ICP equipment, and etching pressure is 0.5 ~ 1pa, Cl
2flow is 25 ~ 35sccm, BCl
3flow is 5 ~ 8sccm, ICP power be 80 ~ 250W, RF substrate bias power is 60 ~ 150W, and etch period is 400 ~ 900 seconds.
9. the preparation method of GaN base light-emitting diode chip for backlight unit structure cell according to claim 1, is characterized in that: described second time is etched in ICP etching apparatus carries out, and adopts Cl
2, BCl
3, Ar mist as etching gas, wherein Cl
2content be 50%-85%, BCl
3content be 5%-10%.
10. the preparation method of GaN base light-emitting diode chip for backlight unit structure cell according to claim 9, is characterized in that: in described ICP equipment, and etching pressure is 0.5 ~ 1pa, Cl
2flow is 25 ~ 40sccm, BCl
3flow is 2 ~ 5sccm, Ar flow be 3 ~ 7sccm, ICP power be 450 ~ 700W, RF substrate bias power is 200 ~ 350W, and etch period is 450 ~ 1000 seconds.
The preparation method of 11. GaN base light-emitting diode chip for backlight unit structure cells according to claim 1, is characterized in that: described third time is etched in ICP etching apparatus carries out, and adopts Cl
2and BCl
3mist is as etching gas, and wherein, etching pressure is 0.5 ~ 0.8pa, Cl
2flow is 5 ~ 15sccm, BCl
3flow is 3 ~ 10sccm, ICP power be 200 ~ 350W, RF substrate bias power is 45 ~ 90W, and etch period is 200 ~ 350 seconds.
The preparation method of 12. GaN base light-emitting diode chip for backlight unit structure cells according to claim 1, is characterized in that: described step 4) also comprise the step removing described photoresist and mask layer.
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| CN104362236B (en) * | 2014-11-11 | 2017-03-08 | 杭州士兰明芯科技有限公司 | A kind of LED structure and preparation method thereof |
| CN105655451B (en) * | 2014-11-13 | 2018-07-06 | 北京北方华创微电子装备有限公司 | A kind of etching mask set and apply its substrate etching method |
| CN106252469A (en) * | 2016-08-29 | 2016-12-21 | 广东德力光电有限公司 | A kind of LED structure cell manufacture method applying compound mask |
| CN111223967A (en) * | 2018-11-26 | 2020-06-02 | 山东浪潮华光光电子股份有限公司 | Manufacturing method for coarsening side wall of GaAs-based red light LED tube core |
| CN116722082B (en) * | 2023-08-07 | 2024-02-23 | 季华实验室 | Preparation method of array substrate, array substrate and display panel |
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| CN100541850C (en) * | 2008-08-28 | 2009-09-16 | 上海蓝光科技有限公司 | A kind of method for manufacturing LED chip |
| CN102130237A (en) * | 2010-12-29 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Method for cutting sapphire substrate LED chip |
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| CN100541850C (en) * | 2008-08-28 | 2009-09-16 | 上海蓝光科技有限公司 | A kind of method for manufacturing LED chip |
| CN102130237A (en) * | 2010-12-29 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Method for cutting sapphire substrate LED chip |
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