CN106252469A - A kind of LED structure cell manufacture method applying compound mask - Google Patents
A kind of LED structure cell manufacture method applying compound mask Download PDFInfo
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- CN106252469A CN106252469A CN201610755909.7A CN201610755909A CN106252469A CN 106252469 A CN106252469 A CN 106252469A CN 201610755909 A CN201610755909 A CN 201610755909A CN 106252469 A CN106252469 A CN 106252469A
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- layer
- photoresist
- structure cell
- led structure
- composite masking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of LED structure cell manufacture method applying compound mask, be included on epitaxial layer deposition composite masking layer, described composite masking layer includes at least tri-layer masking；Forming photoresist layer on composite masking layer surface, the thickness of photoresist layer is 1.5 3.5 microns；Photoresist layer is graphical；Composite masking layer is graphical；The part not having photoresist layer to protect on epitaxial layer is got rid of by the method using ICP；Remove removing photoresistance layer and composite masking layer successively, expose epitaxial layer.The present invention increases mask thicknesses by composite masking layer; improve the controllability of figure and according to different mask layer etch resistance; increase the protection to epitaxial layer, then use the method for ICP that epitaxial layer is performed etching, to form several independent LED structure cell on a sapphire substrate.The technique of the present invention can be effectively improved the quality of finished of LED chip, advantageously reduces production cost simultaneously.
Description
Technical field
The present invention relates to the manufacture method of a kind of LED structure cell.
Background technology
Light emitting diode (LED) is made up of several layers of doped semiconductor materials the thinnest, the electronics of one layer of band excess, another
Layer for want of electronics and form " hole " of positively charged, when there being electric current to pass through, electronics and hole be combined with each other and discharge energy
Amount, thus give off radiance.
The manufacturing process of LED specifically includes that and is done substrate by sapphire, grows GaN light emitting epitaxial layer；Then in luminous extension
Carry out photoetching process on Ceng, light emitting epitaxial layer is performed etching, the LED structure cell being kept completely separate with formation.Of the prior art scarce
Point is: according to the thickness of epitaxial layer, the thickness of photoresist typically to reach more than 10 microns, can be only achieved and is kept completely separate LED's
Requirement, otherwise according to etching selection ratio, dry etching can etch into epitaxial layer, destroys the integrity of LED structure；Secondly as
Photoresist is thicker, and photoetching process is difficult to debug and easily cause the instability of production, and yield is difficult to control to；Finally, thick photoetching
Glue cost is more expensive, and consumption is the most more, is unfavorable for the control of cost.
Summary of the invention
It is an object of the invention to provide a kind of LED structure cell manufacture method applying compound mask, photoresist can be reduced
Consumption.
The present invention solves that its technical problem the technical scheme is that
A kind of LED structure cell manufacture method applying compound mask, comprises the following steps:
(1) PSS Sapphire Substrate, on a sapphire substrate a deposit epitaxial layers is provided；
(2) depositing composite masking layer on epitaxial layer, described composite masking layer includes at least tri-layer masking；
(3) coating photoresist on composite masking layer surface, form photoresist layer after photoresist solidifies, the thickness of photoresist layer is 1.5-
3.5 micron；
(4) photoresist layer is patterned, prepares for next step wet method and dry etching；
(5) method using humidifying etching, gets rid of the part not having photoresist layer to protect on composite masking layer, to composite mask
Layer pattern；
(6) use ICP dry etching method, the part that epitaxial layer does not has composite masking layer and photoresist layer protection is got rid of；
(7) remove removing photoresistance layer and composite masking layer successively, expose epitaxial layer, form several independent LED on a sapphire substrate
Structure cell.
Further, described mask includes ito thin film, SiN thin film, SiO2Thin film and other can carry out wet etching thin film
One of which.
Further, described Sapphire Substrate has and makes the patterned bulge-structure of substrate surface.
Further, after step (6), described epitaxial layer remains with the complete LED structure of N shell, SQW, P layer.
Further, described photoresist layer thickness is 2-3 micron.
The invention has the beneficial effects as follows: the present invention is by utilizing photoresist layer and at least tri-layer masking group of 1.5-3.5 micron
The composite masking layer become, increases mask thicknesses by composite masking layer, improves the controllability of figure and according to different mask layers
Etch resistance, increases the protection to epitaxial layer, then uses the method for ICP to perform etching epitaxial layer, with on a sapphire substrate
Form several independent LED structure cell.The technique of the present invention can be effectively improved the quality of finished of LED chip, advantageously reduces simultaneously
Production cost.
Accompanying drawing explanation
Fig. 1 is the longitudinal cross-section structural representation in step of the present invention (3)；
Fig. 2 is the longitudinal cross-section structural representation in step of the present invention (4)
Fig. 3 is the plan structure schematic diagram in step of the present invention (4)；
Fig. 4 is the plan structure schematic diagram in step of the present invention (5)；
Fig. 5 is the plan structure schematic diagram in step of the present invention (6)；
Fig. 6 is the plan structure schematic diagram in step of the present invention (7).
Detailed description of the invention
Below in conjunction with accompanying drawing and example, the present invention will be further described.
A kind of LED structure cell manufacture method applying compound mask, comprises the following steps:
(1) providing a PSS Sapphire Substrate, it has makes the patterned bulge-structure of substrate surface, with reduce reverse leakage and
Strengthen luminosity；Deposit epitaxial layers on a sapphire substrate；
(2) depositing composite masking layer on epitaxial layer, described composite masking layer includes that at least tri-layer masking, described mask include
Ito thin film, SiN thin film, SiO2 thin film and other can carry out wet etching thin film one of which；
(3) coating photoresist on composite masking layer surface, form photoresist layer after photoresist solidifies, the thickness of photoresist layer is 1.5-
3.5 microns, more preferably 2-3 micron, as shown in Figure 1；
(4) photoresist layer is patterned, prepares for next step wet method and dry etching, as shown in Figures 2 and 3；
(5) method using humidifying etching, gets rid of the part not having photoresist layer to protect on composite masking layer, to composite mask
Layer pattern, as shown in Figure 4；
(6) use ICP dry etching method, the part that epitaxial layer does not has composite masking layer and photoresist layer protection got rid of,
Described epitaxial layer only remains with the complete LED structure of N shell, SQW, P layer, as shown in Figure 5；
(7) remove removing photoresistance layer and composite masking layer successively, expose epitaxial layer, form several independent LED on a sapphire substrate
Structure cell, as shown in Figure 6.
The above, simply presently preferred embodiments of the present invention, the invention is not limited in above-mentioned embodiment, as long as
It reaches the technique effect of the present invention with identical means, all should belong to protection scope of the present invention.
Claims (5)
1. the LED structure cell manufacture method applying compound mask, it is characterised in that comprise the following steps:
(1) Sapphire Substrate, on a sapphire substrate deposit epitaxial layers are provided；
(2) depositing composite masking layer on epitaxial layer, described composite masking layer includes at least tri-layer masking, and described mask is can
Carry out the thin film of wet etching；
(3) coating photoresist on composite masking layer surface, form photoresist layer after photoresist solidifies, the thickness of photoresist layer is 1.5-
3.5 micron；
(4) photoresist layer is patterned, prepares for next step wet method and dry etching；
(5) method using humidifying etching, gets rid of the part not having photoresist layer to protect on composite masking layer, to composite mask
Layer pattern；
(6) use ICP dry etching method, the part that epitaxial layer does not has composite masking layer and photoresist layer protection is got rid of；
(7) remove removing photoresistance layer and composite masking layer successively, expose epitaxial layer, form several independent LED on a sapphire substrate
Structure cell.
A kind of LED structure cell manufacture method applying compound mask the most according to claim 1, it is characterised in that described in cover
Film includes ito thin film, SiN thin film, SiO2The one of which of thin film.
A kind of LED structure cell manufacture method applying compound mask the most according to claim 1, it is characterised in that described indigo plant
Gem substrate is PSS Sapphire Substrate, and it has makes the patterned bulge-structure of substrate surface.
A kind of LED structure cell manufacture method applying compound mask the most according to claim 1, it is characterised in that step (6)
After, described epitaxial layer remains with the complete LED structure of N shell, SQW, P layer.
A kind of LED structure cell manufacture method applying compound mask the most according to claim 1, it is characterised in that described light
Resistance layer thickness is 2-3 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610755909.7A CN106252469A (en) | 2016-08-29 | 2016-08-29 | A kind of LED structure cell manufacture method applying compound mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610755909.7A CN106252469A (en) | 2016-08-29 | 2016-08-29 | A kind of LED structure cell manufacture method applying compound mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106252469A true CN106252469A (en) | 2016-12-21 |
Family
ID=57598406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610755909.7A Pending CN106252469A (en) | 2016-08-29 | 2016-08-29 | A kind of LED structure cell manufacture method applying compound mask |
Country Status (1)
| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101636852A (en) * | 2007-03-02 | 2010-01-27 | 富腾史达Led有限公司 | Vertical LED |
| CN103078039A (en) * | 2011-08-22 | 2013-05-01 | 三星电子株式会社 | Light emitting device package |
| CN103137795A (en) * | 2011-12-02 | 2013-06-05 | 上海蓝光科技有限公司 | Preparation method for GaN-based light emitting diode (LED) chip unit cells |
-
2016
- 2016-08-29 CN CN201610755909.7A patent/CN106252469A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101636852A (en) * | 2007-03-02 | 2010-01-27 | 富腾史达Led有限公司 | Vertical LED |
| CN103078039A (en) * | 2011-08-22 | 2013-05-01 | 三星电子株式会社 | Light emitting device package |
| CN103137795A (en) * | 2011-12-02 | 2013-06-05 | 上海蓝光科技有限公司 | Preparation method for GaN-based light emitting diode (LED) chip unit cells |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161221 |
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| RJ01 | Rejection of invention patent application after publication |