CN210245537U - Light-emitting diode - Google Patents
Light-emitting diode Download PDFInfo
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- CN210245537U CN210245537U CN201921177905.0U CN201921177905U CN210245537U CN 210245537 U CN210245537 U CN 210245537U CN 201921177905 U CN201921177905 U CN 201921177905U CN 210245537 U CN210245537 U CN 210245537U
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- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000005530 etching Methods 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 13
- 238000003892 spreading Methods 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 230000007480 spreading Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 and the like Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
The utility model belongs to the semiconductor field especially relates to a light emitting diode, including substrate 100, range upon range of N type semiconductor layer, luminescent layer and the P type semiconductor layer on substrate 100 to and respectively with P type semiconductor layer and N type semiconductor layer electric connection's P electrode and N electrode, P electrode and N electrode are located same one side of substrate 100, the P electrode includes weld zone and finger-like structure, its characterized in that: and an N expansion strip connected with the N electrode is arranged between the substrate and the light-emitting layer. The utility model discloses a set up the N extension strip of being connected with the N electrode between substrate and luminescent layer, increase epitaxial layer light-emitting area promotes the electric current extension, improves the crowded benefit of electric current.
Description
Technical Field
The utility model belongs to the semiconductor field especially relates to a light emitting diode with be located epitaxial intraformational N extension strip.
Background
At present, the conventional process of manufacturing a GaN-based LED is to grow an epitaxial layer on a sapphire substrate 100 by using an MOCVD process. Since the sapphire substrate 100 is made of an insulating material, a mesa structure is required, and a p-type electrode and an n-type electrode in ohmic contact are prepared on the same side of the substrate 100. In the forward LED structure, due to the existence of the mesa structure and the existence of the transverse resistance, the current density of the edge of the mesa close to the n-type electrode is larger than that of the pad close to the p-type electrode, namely, the current crowding effect exists. Especially for the chip with larger current density, the current crowding effect is more obvious. The local concentration of current will cause the reduction of luminous efficiency and hidden trouble of reliability.
Disclosure of Invention
For improving crowded benefit of electric current in the technique, the utility model provides a light emitting diode, including the substrate, range upon range of N type semiconductor layer, luminescent layer and the P type semiconductor layer on the substrate to and respectively with P type semiconductor layer and N type semiconductor layer electric connection's P electrode and N electrode, P electrode and N electrode are located same one side of substrate, the P electrode includes welding area and finger structure, its characterized in that: and an N expansion strip connected with the N electrode is arranged between the substrate and the light-emitting layer.
In one embodiment, the N expansion strip is arranged between the substrate and the N-type layer, the P-type semiconductor layer is etched until the surface of the substrate forms a hole, the N electrode is arranged in the hole, and the N expansion strip is connected with the N electrode.
In the two embodiments, the N-extension strip is disposed in the middle of the N-type layer, the P-type semiconductor layer is etched to the middle of the N-type layer to form a hole, the N-electrode is disposed in the hole, and the N-extension strip is connected to the N-electrode.
In the third embodiment, the N expansion strip is arranged between the N-type layer and the light-emitting layer, the P-type semiconductor layer is etched until the surface of the N-type layer forms a hole, the N electrode is arranged in the hole, and the N expansion strip is connected with the N electrode.
Wherein, the finger-shaped structure is more than 1 at least, and the N expansion strip is more than 1 at least.
Preferably, the number of the finger structures is at least 2 or more, the number of the N expansion strips is at least 2 or more, and the N expansion strips correspond to the space between the adjacent finger structures.
Further, the N spreading bars are equidistant from adjacent fingers.
Preferably, the N-extension strip is a metal or metal oxide N-extension strip.
Preferably, a transparent conductive layer is further included between the P-electrode and the P-type semiconductor layer.
Preferably, the substrate is a flat substrate or a patterned substrate.
The utility model discloses directly before epitaxial growth or in epitaxial growth, between substrate and N type semiconductor layer, perhaps inside N type semiconductor layer, perhaps make N extension strip between N type semiconductor layer and the luminescent layer to saved the process steps that the sculpture formed the slot on the one hand, simplified process flow, on the other hand has reduced the loss of epitaxial layer, has increased light-emitting area, has improved the light efficiency, has promoted the current expansion simultaneously, has improved the crowded benefit of electric current.
Drawings
Fig. 1 is a top view of a light emitting diode according to embodiment 1 of the present invention.
Fig. 2 is a cross-sectional view of the led along line a-a in fig. 1.
Fig. 3 is a cross-sectional view of the led along line B-B in fig. 1.
Fig. 4 is a top view of a conventional led.
Fig. 5 is a cross-sectional view of the led along line C-C in fig. 4.
Fig. 6 is a cross-sectional view of a light emitting diode according to embodiment 2 of the present invention.
Fig. 7 is a cross-sectional view of a light emitting diode according to embodiment 3 of the present invention.
Detailed Description
The invention will now be described in greater detail with reference to the drawings, in which preferred embodiments of the invention are shown, it being understood that those skilled in the art may modify the invention herein described while still achieving the advantageous effects of the invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
Example 1
Referring to fig. 1 and 2, the present invention provides a light emitting diode, which includes a substrate 100, an N-type semiconductor layer 200 stacked on the substrate 100, a light emitting layer 300, and a P-type semiconductor layer 400, and a P-electrode 500 and an N-electrode 600 electrically connected to the P-type semiconductor layer 400 and the N-type semiconductor layer 200, respectively. The P electrode 500 and the N electrode 600 are located on the same side of the substrate 100, forming a forward-mounted LED. The P electrode 500 and the N electrode 600 are electrically opposite to each other, and when the P electrode 500 and the N electrode 600 are connected to the positive and negative electrodes of an external power source, a current is injected into the light emitting diode, and the light emitting layer 300 emits light with a certain wavelength.
The material of the substrate 100 is selected from Al2O3One of SiC, GaAs, GaN, AlN, GaP, Si, ZnO, MnO, and any combination thereof. The epitaxial growth substrate 100 of the present embodiment is illustrated by taking a sapphire substrate 100 (sapphire substrate) as an example, and the lattice orientation is (0001), but the present invention is not limited to the material and lattice orientation of the substrate 100 used. The substrate 100 may be a flat substrate, or the substrate 100 may be patterned to change a propagation path of light and improve the light extraction efficiency of the light emitting device.
The P-type semiconductor layer 400 or the N-type semiconductor layer 200 are P-or N-type doped, respectively, P-type doped with a P-type dopant such as Mg, Zn, Ca, Sr, or Ba, N-type doped with an N-type dopant such as Si, Ge, or Sn, without excluding other element equivalent substitution dopings. The P-type semiconductor layer 400 or the N-type semiconductor layer 200 may be a gallium nitride-based, gallium arsenide-based, or gallium phosphide-based material.
The light-emitting layer 300 is a material capable of providing optical radiation, and the specific radiation wavelength band is 550-950 nm, such as red, yellow, orange, infrared light, and the light-emitting layer 300 may be a single quantum well structure or a multiple quantum well structure.
A transparent conductive layer 700 is further included between the P-electrode 500 and the P-type semiconductor layer 400. The transparent conductive layer 700 may be an indium tin oxide layer, a zinc indium tin oxide layer, an indium zinc oxide layer, a zinc tin oxide layer, a gallium indium oxide layer, a gallium zinc oxide layer, an aluminum-doped zinc oxide layer, or a fluorine-doped tin oxide layer.
As shown in fig. 1, the P electrode 500 includes P pads 510 and fingers 520, and the number of the fingers 520 is at least 1 or more, and further, the number of the fingers 520 is at least 2 or more, which can make the current injected into the P pads 510 spread more uniformly. The finger structure 520 connected to the P-pad 510 may facilitate the current injected at the P-pad 510 to extend and spread along the surface of the P-type semiconductor layer 400.
The N-electrode 600 also includes an N-pad region 610 and an N-spreading bar 620 connected thereto. The N bonding region 610 is located in the hole K, surrounded by the epitaxial layer, and a gap is formed between the N electrode 600 and the surrounding epitaxial layer, so as to achieve the purpose of electrical isolation. An insulating layer (not shown) may be disposed between the N-electrode 600 in the hole and the surrounding epitaxial layer to electrically isolate the two.
As shown in fig. 2, in the present invention, the N-extension strip 620 is located between the substrate 100 and the light-emitting layer 300. Specifically, the position of the N extension 620 in the longitudinal direction of the epitaxial layer may be adjusted according to the actual production process, for example, the N extension strip 620 may be located between the substrate 100 and the N-type semiconductor layer 200, or within the N-type semiconductor layer 200, or between the N-type semiconductor layer 200 and the light emitting layer 300.
Fig. 3 is a cross-sectional view of the led taken along line B-B in fig. 1. As shown in fig. 3, in the present embodiment, the beneficial effects of the N-spreading bar 620 are illustrated by taking the example that the N-spreading bar 620 is located between the substrate 100 and the N-type semiconductor layer 200. Before epitaxial growth, N-type extension strips 620 are fabricated on the substrate, then epitaxial growth is performed to form an epitaxial layer including the N-type semiconductor layer 200, the light emitting layer 300 and the P-type semiconductor layer 400, finally, the P-type semiconductor layer 400 is etched to the surface of the substrate 100 to form holes K, N-bonding regions 610 are fabricated in the holes K, the N-bonding regions 610 are connected with the N-type extension strips 620, and the N-bonding regions 610 can be directly fabricated on the surface of one end of the N-type extension strips 620.
Corresponding to the finger structure 520, the number of N spreading bars is at least 1, and further, the number of N spreading bars is at least 2, which facilitates spreading of the current. When the number of the fingers 520 is more than 2, the number of the N spreading bars is also more than 2, and the N spreading bars may be spaced from the adjacent fingers 520 to make the current distribution uniform. For example, the fingers 520 are 3 parallel, the N spreading bars are 2, each N spreading bar is located between adjacent fingers 520 in a planar projection, the N spreading bars 620 are substantially parallel to the fingers 520, and the 2N spreading bars 620 are spaced from the 3 fingers 520 by the same distance.
Since the epitaxial growth is required to be continued after the N extension bar 620 is manufactured, the material of the N extension bar 620 does not affect the quality of the epitaxial growth, and the material may be metal or metal oxide, such as gold, silver, nickel, titanium, aluminum, and the like, or metal oxide such as indium tin oxide, zinc indium tin oxide, indium zinc oxide, zinc tin oxide, gallium indium oxide, gallium zinc oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide, and the like.
Fig. 4 is a top view of a conventional LED, and fig. 5 is a cross-sectional view of a line C-C in fig. 4, as shown in fig. 4 and 5, in a conventional process, in order to fabricate an N expansion strip 620 connected to an N electrode 600, after an epitaxial layer is grown, an etching process is generally used to etch a P-type semiconductor layer 400 through a light emitting layer 300 to an N-type semiconductor layer 200 to form a trench G with a certain width, and then a plating process is used to fabricate the N expansion strip 620 in the trench G. In the conventional process, on one hand, an etching step for manufacturing the N extension bar 620 is added, and on the other hand, in the process of forming the groove G, the epitaxial layer removed by etching causes loss, so that the epitaxial light-emitting area is reduced, and the light efficiency is reduced.
The utility model discloses in, directly make N extension strip between substrate 100 and N type semiconductor layer 200, then continue epitaxial growth and form the epitaxial layer, after epitaxial growth accomplishes, sculpture P type semiconductor layer 400 forms the hole to substrate 100 surface, makes N electrode 600 in the hole to need not further to adopt the sculpture technology to form the slot of placing N extension strip, simplified the process steps.
Example 2
Referring to fig. 6, the present embodiment is different from embodiment 1 in that the position of the N expansion strip 620 is adjusted, the N expansion strip 620 is disposed in the middle of the N-type layer, the P-type semiconductor layer 400 is etched to form a hole in the middle of the N-type layer, the N electrode 600 is disposed in the hole, and the N expansion strip 620 is connected to the N electrode 600.
Example 3
Referring to fig. 7, the present embodiment is different from embodiments 1 and 2 in that the position of the N-extension strip 620 is adjusted, the N-extension strip 620 is disposed between the N-type layer and the light emitting layer 300, the P-type semiconductor layer 400 is etched to form a hole K on the surface of the N-type layer, the N-electrode 600 is disposed in the hole, and the N-extension strip 620 is connected to the N-electrode 600.
Compare in traditional LED, form the slot G who sets up N extension strip 620 through the sculpture epitaxial layer, the utility model discloses directly before epitaxial growth or in epitaxial growth, between substrate 100 and N type semiconductor layer 200, or inside N type semiconductor layer 200, or make N extension strip 620 between N type semiconductor layer 200 and the luminescent layer 300, thereby saved the sculpture on the one hand and formed the process step of slot G, simplify the process flow, on the other hand has reduced the loss of epitaxial layer, the light-emitting area has been increased, the light efficiency has been improved, the current expansion has been promoted simultaneously, the current crowding benefit has been improved.
It should be understood that the above-mentioned embodiments are the preferred embodiments of the present invention, and the scope of the present invention is not limited to these embodiments, and any changes made according to the present invention are all included in the protection scope of the present invention.
Claims (10)
1. A light-emitting diode (LED) comprises a substrate, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a P-electrode and an N-electrode, wherein the N-type semiconductor layer, the light-emitting layer and the P-type semiconductor layer are stacked on the substrate, the P-electrode and the N-electrode are respectively and electrically connected with the P-type semiconductor layer and the N-type semiconductor layer, the P-electrode and the N-electrode are positioned on the same side of the substrate, the P: and an N expansion strip connected with the N electrode is arranged between the substrate and the light-emitting layer.
2. A light emitting diode according to claim 1 wherein: the N expansion strip is a metal or metal oxide N expansion strip.
3. A light emitting diode according to claim 1 wherein: the N expansion strip is arranged between the substrate and the N-type layer, the P-type semiconductor layer is etched until the surface of the substrate forms a hole, the N electrode is arranged in the hole, and the N expansion strip is connected with the N electrode.
4. A light emitting diode according to claim 1 wherein: the N expansion strip is arranged in the middle of the N-type layer, a hole is formed from the etching of the P-type semiconductor layer to the middle of the N-type layer, the N electrode is arranged in the hole, and the N expansion strip is connected with the N electrode.
5. A light emitting diode according to claim 1 wherein: the N expansion strip is arranged between the N-type layer and the light-emitting layer, the P-type semiconductor layer is etched until the surface of the N-type layer forms a hole, the N electrode is arranged in the hole, and the N expansion strip is connected with the N electrode.
6. The light-emitting diode according to any one of claims 1 to 5, wherein: the number of the finger-shaped structures is at least more than 1, and the number of the N expansion strips is at least more than 1.
7. The light-emitting diode according to claim 6, wherein: the number of the finger-shaped structures is at least more than 2, the number of the N expansion strips is at least more than 2, and the N expansion strips correspond to the positions between the adjacent finger-shaped structures.
8. The led of claim 7, wherein: the N expansion strips are equidistant from adjacent fingers.
9. The light-emitting diode according to any one of claims 1 to 5, wherein: and a transparent conducting layer is also arranged between the P electrode and the P type semiconductor layer.
10. A light emitting diode according to claim 1 wherein: the substrate is a flat sheet substrate or a patterned substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921177905.0U CN210245537U (en) | 2019-07-25 | 2019-07-25 | Light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921177905.0U CN210245537U (en) | 2019-07-25 | 2019-07-25 | Light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210245537U true CN210245537U (en) | 2020-04-03 |
Family
ID=69992779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921177905.0U Active CN210245537U (en) | 2019-07-25 | 2019-07-25 | Light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210245537U (en) |
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2019
- 2019-07-25 CN CN201921177905.0U patent/CN210245537U/en active Active
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