CN112447891A - Light emitting diode with composite current blocking layer and preparation method thereof - Google Patents
Light emitting diode with composite current blocking layer and preparation method thereof Download PDFInfo
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- CN112447891A CN112447891A CN201910819227.1A CN201910819227A CN112447891A CN 112447891 A CN112447891 A CN 112447891A CN 201910819227 A CN201910819227 A CN 201910819227A CN 112447891 A CN112447891 A CN 112447891A
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- 238000003892 spreading Methods 0.000 claims description 10
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
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- 238000005530 etching Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
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- 230000004888 barrier function Effects 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
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- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
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- 239000000463 material Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 3
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
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- 229910017083 AlN Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- 238000000605 extraction Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention belongs to the field of semiconductors, and particularly relates to a light-emitting diode with a composite current barrier layer and a preparation method thereof, wherein the light-emitting diode comprises a substrate, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer and a transparent conducting layer which are sequentially stacked on the substrate, and an N electrode and a P electrode which are respectively and electrically connected with the N-type semiconductor layer and the P-type semiconductor layer, and the light-emitting diode is characterized in that: and a composite current blocking layer is arranged between the P-type semiconductor layer and the P electrode and comprises metal particles and an insulating layer. The metal particles can change the path of incident light, the light emitting efficiency is improved, and the metal particles can enable the interface of the insulating layer, which is in contact with the insulating layer, to have a wavy coarsening structure, so that the firmness of the P electrode is improved, and the light emitting efficiency is further improved.
Description
Technical Field
The invention belongs to the field of semiconductors, and particularly relates to a light-emitting diode with a composite current blocking layer and a preparation method thereof, wherein the composite current blocking layer comprises metal particles and an insulating layer, and can improve the firmness of an electrode and the light-emitting efficiency of the light-emitting diode.
Background
In the conventional forward led structure, the P electrode and the N electrode are located on the same side of the led substrate, and the current density below the P electrode is relatively high (current crowding), and the light emitting efficiency is also relatively high. In order to improve the current crowding, an insulating layer is usually added below the P-electrode to serve as a current blocking layer, and the P-electrode is easy to fall off during wire bonding in packaging application due to poor adhesion of the insulating layer and an epitaxial layer (gallium nitride).
Therefore, how to improve the robustness of the P electrode and improve the light absorption of the P electrode is a problem to be solved in the art.
Disclosure of Invention
The invention aims to improve the firmness and light absorption of a P electrode, and provides a light-emitting diode with a composite current barrier layer and a preparation method thereof.
According to a first aspect of the present invention, the light emitting diode with a composite current blocking layer disclosed in the present invention comprises a substrate, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer and a transparent conductive layer sequentially stacked on the substrate, and an N electrode and a P electrode electrically connected to the N-type semiconductor layer and the P-type semiconductor layer, respectively, wherein: and a composite current blocking layer is arranged between the P-type semiconductor layer and the P electrode and comprises metal particles and an insulating layer.
Further, the metal particles are arranged in layers to form a metal particle layer. In one embodiment, the metal particle layer is located between the P-type semiconductor layer and the insulating layer. In both embodiments, the metal particle layer is located between the P-electrode and the insulating layer. In a third embodiment thereof, the layer of metal particles is located inside the insulating layer; preferably, the number of layers of the metal particle layer is at least 1.
Further, the surface of one side of the insulating layer, which is in contact with the metal particle layer, is provided with a coarsening structure corresponding to the shape of the metal particle layer. Preferably, the roughened structure is wavy.
Furthermore, the metal particles are distributed in the insulating layer in a granular manner. Preferably, the metal particles are uniformly distributed or non-uniformly distributed.
Further, the metal particles are easy to agglomerate at high temperature; preferably, the metal particles are aluminum, silver or nickel metal particles.
Further, the P electrode includes a pad portion and a current spreading bar, and the current spreading bar is electrically connected to the transparent conductive layer.
Further, the insulating layer is one or a combination of several of a silicon dioxide layer, a silicon carbide layer, a silicon nitride layer or an aluminum oxide layer.
Further, the transparent conductive layer is one or a combination of several of an indium tin oxide layer, a zinc indium tin oxide layer, an indium zinc oxide layer, a zinc tin oxide layer, a gallium indium oxide layer, a gallium zinc oxide layer, an aluminum-doped zinc oxide layer, or a fluorine-doped tin oxide layer.
According to a second aspect of the present invention, the present invention provides a method for preparing the light emitting diode, specifically comprising the following steps:
(1) providing a substrate, and sequentially growing an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer on the substrate;
(2) manufacturing a composite current blocking layer on the surface of the P-type semiconductor layer;
(3) manufacturing a transparent conducting layer on the composite current blocking layer;
(4) etching the transparent conducting layer to the composite current blocking layer to form a first window penetrating through the transparent conducting layer, and etching the transparent conducting layer to the N-type semiconductor layer to form a second window;
(5) and respectively manufacturing a P electrode and an N electrode on the first window and the second window, wherein the P electrode is electrically connected with the P type semiconductor layer, and the N electrode is electrically connected with the N type semiconductor layer.
The method is characterized in that: the composite current blocking layer comprises metal particles and an insulating layer;
further, the specific manufacturing method of the metal particle layer comprises the following steps: (1) plating a metal layer; (2) and annealing the metal layer to form metal particles in the metal layer.
Further, the metal particles are arranged in layers to form a metal particle layer. In one embodiment, the metal particle layer is located between the P-type semiconductor layer and the insulating layer. In both embodiments, the metal particle layer is located between the P-electrode and the insulating layer. In a third embodiment thereof, the layer of metal particles is located inside the insulating layer; preferably, the number of layers of the metal particle layer is at least 1.
Further, the surface of one side of the insulating layer, which is in contact with the metal particle layer, is provided with a coarsening structure corresponding to the shape of the metal particle layer. Preferably, the insulating layer is deposited on the surface of the metal particles and in the gaps between the metal particles to form a roughened structure corresponding to the shape of the metal particle layer. More preferably, the roughened structure is wavy.
Furthermore, the metal particles are distributed in the insulating layer in a granular manner. Preferably, the metal particles are uniformly distributed or non-uniformly distributed.
Further, the metal particles are easy to agglomerate at high temperature; preferably, the metal particles are aluminum, silver or nickel metal particles.
Further, the P electrode includes a pad portion and a current spreading bar, and the current spreading bar is electrically connected to the transparent conductive layer.
Further, the insulating layer is one or a combination of several of a silicon dioxide layer, a silicon carbide layer, a silicon nitride layer or an aluminum oxide layer.
Further, the transparent conductive layer is one or a combination of several of an indium tin oxide layer, a zinc indium tin oxide layer, an indium zinc oxide layer, a zinc tin oxide layer, a gallium indium oxide layer, a gallium zinc oxide layer, an aluminum-doped zinc oxide layer, or a fluorine-doped tin oxide layer.
According to the invention, the composite current blocking layer is arranged between the P-type semiconductor layer and the P electrode, the composite current blocking layer comprises metal particles and an insulating layer, and the composite current blocking layer at least has the following beneficial effects:
(1) the metal particle layer is arranged between the insulating layer and the P-type semiconductor layer, or between the insulating layer and the P electrode, or inside the insulating layer, or the metal particles are uniformly or non-uniformly distributed inside the insulating layer, so that the path of light emitted into the insulating layer can be changed, the loss of light inside the light-emitting diode caused by refraction is reduced, and the light-emitting efficiency of the light-emitting diode is improved;
(2) the surface of one side, in contact with the metal particle layer, of the insulating layer is provided with a wavy coarsening structure, and the coarsening structure can increase the contact surface of the insulating layer and the P-type semiconductor layer and increase the firmness of the electrode; on the other hand, the light emitting efficiency of the light emitting diode can be further improved;
(3) an insulating layer is deposited on the surface of the metal particle layer, and the insulating layer is deposited in a gap between the surface of the metal particle layer and the metal particles, so that a coarsening structure is formed on the contact surface of the insulating layer and the metal particle layer, the insulating layer can be coarsened without increasing the process step of coarsening the insulating layer, and the process steps are saved;
(4) the metal particles are formed by annealing the metal particle film layer, and the process is simple and easy to operate.
Drawings
Fig. 1 is a schematic structural diagram of a light emitting diode having a composite current blocking layer according to embodiment 1 of the present invention.
Fig. 2 is a schematic structural diagram of a light emitting diode having a composite current blocking layer according to embodiment 2 of the present invention.
Fig. 3 is a schematic structural diagram of a light emitting diode having a composite current blocking layer according to embodiment 3 of the present invention.
Fig. 4 is a schematic structural diagram of a light emitting diode having a composite current blocking layer according to embodiment 4 of the present invention.
Fig. 5 is a schematic flow chart of a method for preparing a composite current blocking layer according to embodiment 5 of the present invention.
Detailed Description
The following detailed description of the embodiments of the present invention will be provided with reference to the drawings and examples, so that how to apply the technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented. It should be noted that, as long as there is no conflict, the embodiments and the features of the embodiments of the present invention may be combined with each other, and the technical solutions formed are within the scope of the present invention.
Example 1
Referring to fig. 1, the light emitting diode with the composite current blocking layer according to the present invention includes a substrate 10, an N-type semiconductor layer 20, a light emitting layer 30, a P-type semiconductor layer 40, and a transparent conductive layer 50 sequentially stacked on the substrate 10, and an N electrode 61 and a P electrode 62 electrically connected to the N-type semiconductor layer 20 and the P-type semiconductor layer 40, respectively.
Wherein the material of the substrate 10 is selected from Al2O3One of SiC, GaAs, GaN, AlN, GaP, Si, ZnO, MnO, and any combination thereof. The epitaxial growth substrate 10 of the present embodiment is illustrated by taking a sapphire substrate 10 (sapphire substrate) as an example, and the lattice direction is (0001), but the present invention does not limit the material and lattice direction of the substrate 10 used. The substrate 10 can be patterned to change the propagation path of light, thereby improving the light extraction efficiency of the light emitting device.
The N-type semiconductor layer 20, the P-type semiconductor layer 40, and the light emitting layer 30 therebetween are formed on the substrate 10 by a Metal Organic Chemical Vapor Deposition (MOCVD) method. The P-type semiconductor layer 40 or the N-type semiconductor layer 20 is doped N-or P-type, respectively, with an N-type dopant such as Si, Ge, or Sn. The p-type is doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, without excluding other element equivalent substitution dopings. The P-type semiconductor layer 40 or the N-type semiconductor layer 20 may be a gallium nitride-based, gallium arsenide-based, or gallium phosphide-based material. The light-emitting layer 30 is a material capable of providing light radiation, the specific radiation band is 390-950 nm, such as blue, green, red, yellow, orange, infrared light, and the light-emitting layer 30 may be a single quantum well or a multiple quantum well.
The transparent conductive layer 50 is one or a combination of several of an indium tin oxide layer, a zinc indium tin oxide layer, an indium zinc oxide layer, a zinc tin oxide layer, a gallium indium oxide layer, a gallium zinc oxide layer, an aluminum-doped zinc oxide layer, and a fluorine-doped tin oxide layer. The present embodiment is preferably an indium tin oxide layer.
The P-electrode 62 includes a pad portion 621 and current spreading bars 622, and the spreading bars 622 are electrically connected to the transparent conductive layer 50. Specifically, the spreading bar 622 extends along the surface of the transparent conductive layer 50 toward the edge of the light emitting diode, so that the current is extended from the pad portion 621 toward the edge of the light emitting diode, and the current crowding phenomenon caused by the current directly flowing into the light emitting diode from below the pad portion 621 is improved.
A composite current blocking layer 70 is disposed between the P-type semiconductor and the P-electrode 62, the composite current blocking layer 70 including metal particles 71 and an insulating layer 72. The metal particles 71 may be metal particles that are easily agglomerated at high temperature, and are preferably metal particles of aluminum, silver, nickel, or the like. The insulating layer 72 may be one or a combination of silicon dioxide layer, silicon carbide layer, silicon nitride layer, or aluminum oxide layer, and the insulating layer 72 is preferably a silicon dioxide layer in this embodiment.
As shown in fig. 1, the metal particles 71 are arranged in a layer to form a metal particle 71 layer, the metal particle 71 layer is located between the P-type semiconductor layer 40 and the insulating layer 72, the metal particle 71 layer may be one or more layers, and the embodiment is preferably a metal particle 71 layer. The surface of the side of the insulating layer 72 in contact with the metal particle 71 layer has a roughened structure corresponding to the shape of the metal particle 71 layer, and in the present embodiment, the lower contact surface of the insulating layer 72 in contact with the metal particle 71 layer has a roughened structure. Specifically, the coarsening structure is wavy.
Example 2
Referring to fig. 2, the metal particles 71 are arranged in layers to form a metal particle 71 layer, the metal particle 71 layer is located between the P-electrode 62 and the insulating layer 72, and the metal particle 71 layer may be one or more layers, and the embodiment is preferably a metal particle 71 layer. The surface of the insulating layer 72 on the side contacting the metal particle 71 layer has a roughened structure corresponding to the shape of the metal particle 71 layer, and in the present embodiment, the upper contact surface of the insulating layer 72 contacting the metal particle 71 layer has a roughened structure. Specifically, the coarsening structure is wavy.
Example 3
Referring to fig. 3, the metal particles 71 are arranged in layers to form a metal particle 71 layer, the metal particle 71 layer is located inside the insulating layer 72, and the metal particle 71 layer may be one or more layers, and the embodiment is preferably a metal particle 71 layer. The surface of the insulating layer 72 on the side contacting the metal particle 71 layer has a roughened structure corresponding to the shape of the metal particle 71 layer, and in the present embodiment, both contact surfaces of the insulating layer 72 in contact with the metal particle 71 layer have roughened structures. Specifically, the coarsening structure is wavy.
Example 4
Referring to fig. 4, the metal particles 71 are distributed in the insulating layer 72 in a granular form, and the distribution may be uniform or non-uniform. The present embodiment preferably has the metal particles 71 uniformly distributed inside the insulating layer 72.
According to the invention, the metal particle 71 layer is arranged between the insulating layer 72 and the P-type semiconductor, or between the insulating layer 72 and the P electrode 62, or inside the insulating layer 72, or the metal particles 71 are uniformly or non-uniformly distributed inside the insulating layer 72, so that the light path of the light emitted into the insulating layer can be changed, the loss of the light inside the light-emitting diode caused by refraction is reduced, and the light-emitting efficiency of the light-emitting diode is improved; the surface of one side, which is in contact with the metal particles 71, of the insulating layer 72 has a wavy coarsening structure, and the coarsening structure can increase the contact surface between the insulating layer 72 and the P-type semiconductor layer 40 and increase the firmness of the P electrode 62; on the other hand, the light emitting efficiency of the light emitting diode can be further improved.
Example 5
Referring to fig. 5, in order to manufacture the light emitting diode, the present embodiment provides a manufacturing method, which specifically includes the following steps:
s1, providing a substrate 10, and sequentially growing an N-type semiconductor layer 20, a light emitting layer 30, and a P-type semiconductor layer 40 on the substrate 10;
s2, manufacturing a composite current barrier layer 70 on the surface of the P-type semiconductor layer 40;
s3, manufacturing a transparent conducting layer 50 on the composite current barrier layer 70;
s4, etching the transparent conducting layer 50 to the composite current blocking layer 70 to form a first window 51 penetrating through the transparent conducting layer 50, and etching the transparent conducting layer 50 to the N-type semiconductor layer 20 to form a second window 611;
s5, forming a P electrode 62 and an N electrode 61 in the first window 51 and the second window 611, respectively, wherein the P electrode 62 is electrically connected to the P-type semiconductor layer 40, and the N electrode 61 is electrically connected to the N-type semiconductor layer 20;
the composite current blocking layer 70 includes metal particles 71 and an insulating layer 72. The metal particles 71 may be metal particles that are easily agglomerated at high temperature, and are preferably metal particles of aluminum, silver, nickel, or the like. The insulating layer 72 may be one or a combination of silicon dioxide layer, silicon carbide layer, silicon nitride layer, or aluminum oxide layer, and the insulating layer 72 is preferably a silicon dioxide layer in this embodiment.
The specific manufacturing method of the metal particle 71 layer comprises the following steps: (1) plating a metal layer; (2) the metal layer is annealed to form metal particles 71 in the metal layer. The metal layer is plated by a vacuum evaporation method, a sputtering method or a chemical evaporation method.
The metal particles 71 may be arranged in layers to form a layer of metal particles 71, which may be between the P-type semiconductor layer 40 and the insulating layer 72, and the number of layers may be 1 or more. The surface of the side of the insulating layer 72 in contact with the metal particle 71 layer has a roughened structure corresponding to the shape of the metal particle 71 layer, and specifically, the lower contact surface of the insulating layer 72 in contact with the metal particle 71 layer has a roughened structure. The specific forming process of the coarsening structure comprises the following steps: when the insulating layer 72 is deposited on the metal particle 71 layer, the insulating material is simultaneously deposited on the surface of the metal particle 71 and the gap between the metal particles 71, thereby forming a wave-shaped coarsening pattern corresponding to the metal particle 71 layer. The insulating layer 72 may be grown using a PECVD method.
The metal particles 71 may be arranged in layers to form a layer of metal particles 71, which may be 1 or more layers, between the P-electrode 62 and the insulating layer 72.
The metal particles 71 may be arranged in layers to form a layer of metal particles 71, which may have 1 or more layers within the insulating layer 72.
The metal particles 71 may be distributed in the insulating layer 72 in a granular form, and the distribution mode may be uniform distribution or non-uniform distribution.
The structure of the light emitting diode formed specifically is as described in embodiments 1 to 4, and is not described herein again.
According to the invention, the insulating layer 72 is deposited on the surface of the metal particle 71, and the insulating layer 72 is deposited in the gap between the surface of the metal particle 71 and the metal particle 71, so that a roughening structure is formed on the contact surface of the insulating layer 72 and the metal particle 71, the insulating layer 72 can be roughened without increasing the process step of roughening the insulating layer 72, and the process steps are saved; the metal particles 71 are formed by annealing the metal particle 71 film layer, and the process is simple and easy to operate.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the invention, so that any modifications, equivalents, improvements and the like, which are within the spirit and principle of the present invention, should be included in the scope of the present invention.
Claims (27)
1. The light-emitting diode with the composite current blocking layer comprises a substrate, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer and a transparent conducting layer which are sequentially stacked on the substrate, and an N electrode and a P electrode which are respectively electrically connected with the N-type semiconductor layer and the P-type semiconductor layer, and is characterized in that: and a composite current blocking layer is arranged between the P-type semiconductor layer and the P electrode and comprises metal particles and an insulating layer.
2. The LED with the composite current blocking layer as claimed in claim 1, wherein the metal particles are arranged in a layer to form a metal particle layer.
3. The light-emitting diode with the composite current blocking layer according to claim 2, wherein the metal particle layer is located between the P-type semiconductor layer and the insulating layer.
4. The light-emitting diode with the composite current blocking layer according to claim 2, wherein the metal particle layer is located between the P electrode and the insulating layer.
5. The LED with composite current blocking layer according to claim 2, wherein said metal particle layer is located inside the insulating layer.
6. The light-emitting diode with the composite current blocking layer according to any one of claims 2 to 5, wherein the number of the metal particle layers is at least 1.
7. The light-emitting diode with the composite current blocking layer according to claim 6, wherein the surface of the insulating layer on the side contacting the metal particle layer has a roughened structure corresponding to the shape of the metal particle layer.
8. The LED of claim 1, wherein said metal particles are distributed in the insulating layer in a granular form.
9. The LED of claim 8, wherein said metal particles are uniformly or non-uniformly distributed.
10. The light-emitting diode of claim 1, wherein said metal particles are particles that are prone to agglomeration at high temperatures.
11. The LED of claim 10, wherein said metal particles are aluminum, silver, or nickel metal particles.
12. The light-emitting diode of claim 1, wherein the P electrode comprises a pad portion and a current spreading bar, and the current spreading bar is electrically connected to the transparent conductive layer.
13. The preparation method of the light-emitting diode with the composite current blocking layer comprises the following steps:
providing a substrate, and sequentially growing an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer on the substrate;
manufacturing a composite current blocking layer on the surface of the P-type semiconductor layer;
manufacturing a transparent conducting layer on the composite current blocking layer;
etching the transparent conducting layer to the composite current blocking layer to form a first window penetrating through the transparent conducting layer, and etching the transparent conducting layer to the N-type semiconductor layer to form a second window;
respectively manufacturing a P electrode and an N electrode on the first window and the second window, wherein the P electrode is electrically connected with the P type semiconductor layer, and the N electrode is electrically connected with the N type semiconductor layer;
the method is characterized in that: the composite current blocking layer includes metal particles and an insulating layer.
14. The method of claim 13, wherein the metal particles are layered to form a metal particle layer.
15. The method for preparing a light-emitting diode with a composite current blocking layer according to claim 14, wherein the specific manufacturing method of the metal particle layer comprises the following steps: (1) plating a metal layer; (2) and annealing the metal layer to form metal particles in the metal layer.
16. The method for manufacturing a light emitting diode having a composite current blocking layer according to claim 14, wherein the metal particle layer is located between the P-type semiconductor layer and the insulating layer.
17. The method for preparing a light-emitting diode having a composite current blocking layer according to claim 14, wherein the metal particle layer is disposed between the P electrode and the insulating layer.
18. The method for preparing a light-emitting diode having a composite current blocking layer according to claim 14, wherein the metal particle layer is located inside the insulating layer.
19. The method for manufacturing a light-emitting diode having a composite current blocking layer according to any one of claims 14 to 18, wherein the number of the metal particle layers is at least 1.
20. The method for preparing a light-emitting diode with a composite current blocking layer according to claim 19, wherein the surface of the side of the insulating layer in contact with the metal particle layer has a roughened structure corresponding to the shape of the metal particle layer.
21. The method for manufacturing a light emitting diode having a composite current blocking layer according to claim 20, wherein the insulating layer is deposited on the surface of the metal particles and in the gaps between the metal particles to form a roughened structure corresponding to the shape of the metal particle layer.
22. The method for manufacturing a light emitting diode having a composite current blocking layer according to claim 21, wherein the roughened structure is wavy.
23. The method of claim 13, wherein the metal particles are distributed in the insulating layer in a granular form.
24. The method of claim 23, wherein the metal particles are uniformly or non-uniformly distributed.
25. The method of claim 13, wherein the metal particles are agglomerated metal particles at high temperature.
26. The method as claimed in claim 25, wherein the metal particles are aluminum, silver or nickel metal particles.
27. The method of claim 13, wherein the P electrode comprises a pad portion and a current spreading bar electrically connected to the transparent conductive layer.
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| US20120211788A1 (en) * | 2011-02-22 | 2012-08-23 | Hwan Kuk Yuh | Semiconductor light-emitting device |
| CN103066173A (en) * | 2012-12-12 | 2013-04-24 | 华灿光电股份有限公司 | Light-emitting diode (LED) chip and preparation method thereof |
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