KR101449032B1 - flip-chip structured group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them - Google Patents
flip-chip structured group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them Download PDFInfo
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- KR101449032B1 KR101449032B1 KR1020080033987A KR20080033987A KR101449032B1 KR 101449032 B1 KR101449032 B1 KR 101449032B1 KR 1020080033987 A KR1020080033987 A KR 1020080033987A KR 20080033987 A KR20080033987 A KR 20080033987A KR 101449032 B1 KR101449032 B1 KR 101449032B1
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Abstract
The present invention includes a thin film structure composed of first, second, and third ohmic contact current spreading layers on the upper surface of the upper nitride-based clad layer which is the light emitting surface of the group III nitride-based semiconductor light-emitting diode device A group III nitride-based semiconductor light-emitting diode element and a method of manufacturing the same.
More specifically, the present invention relates to a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor upper surface of a nitride based clad layer of a light emitting structure for a light- 1 ohmic contact current spreading layer, a group III nitride-based conductive thin film structure as a current spreading layer, a transparent conductive thin film structure as a second ohmic contact current spreading layer, and a reflective conductive thin film structure as a third ohmic contact current spreading layer. Prior to growing the spreading layer, the p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductors and ohmic contact current spreading The superlattice structure is interposed between the layers to facilitate current injection in the vertical direction and the overall performance of the light emitting diode device including the driving voltage and the external light emitting efficiency can be effectively improved.
A group III nitride-based conductive thin film structure, a transparent conductive thin film structure, a reflective conductive thin film structure, an ohmic contact current spreading layer, a light extracting structure, a surface irregularity
Description
The present invention relates to a method for manufacturing a semiconductor light emitting device, comprising the steps of: forming a first ohmic contact film on a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + An ohmic contact current spreading layer composed of a group III nitride-based conductive thin film structure as a diffusion layer, a transparent conductive thin film structure as a second ohmic contact current spreading layer, and a reflective conductive thin film structure as a third ohmic contact current spreading layer Prior to growth, the p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor and the first, second, and third A superlattice structure is inserted between the thin film structures composed of the ohmic contact current spreading layer to facilitate current injection in the vertical direction and the first or second ohmic contact current spreading The surface irregularity process is introduced on the upper surface of the layer, It is possible to effectively improve the overall performance of the light emitting diode device including the light emission efficiency.
When a forward current of a certain size is applied to a light emitting diode (LED) device, the current in the active layer in the solid-state light-emitting structure is converted into light to generate light. The earliest LED element research and development forms a compound semiconductor such as indium phosphide (InP), gallium arsenide (GaAs), and gallium phosphorus (GaP) in a p-i-n junction structure. The LED emits light of a visible light range of a wavelength band longer than the wavelength of green light, but recently, a device emitting blue and ultraviolet light is also commercialized due to research and development of the group III nitride-based semiconductor material system. Device, a light source device, and an environmental application device. Further, it is possible to combine three LED device chips of red, green, and blue, or to add a phosphor to a short wavelength pumping LED device LEDs for white light source that emits white light by grafting have been developed and the application range thereof has been extended to illumination devices. In particular, LED devices using solid single crystal semiconductors have a high efficiency of converting electrical energy into light energy, have a long life span of 5 years or more on average, and are capable of significantly reducing energy consumption and maintenance costs. It is attracting attention.
Since a light-emitting diode (hereinafter referred to as a group III nitride-based semiconductor light-emitting diode) device manufactured from the group III nitride-based semiconductor material is generally grown on an insulating growth substrate (typically, sapphire) -5 group compound semiconductor light emitting diode device, two electrodes of the LED device facing each other on the opposite sides of the growth substrate can not be provided, so that the two electrodes of the LED device must be formed on the upper part of the crystal growth material. A conventional structure of such a group III nitride-based semiconductor light-emitting diode device is schematically illustrated in FIGS. 5 and 7. FIG.
5, the group III nitride-based semiconductor light-emitting diode device includes a
As described above, since the
In particular, since the upper nitride-based
The ohmic contact
As described above, in order to obtain a high-brightness light emitting diode device having a high light transmittance of the ohmic contact current spreading
A transparent conductive material such as ITO or ZnO is formed on the upper surface of the p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor which is the upper nitride- Recently, YK Su et al. Have reported that the above-mentioned transparent electroconductive material can be used as a good ohmic contact current spreading
As shown in FIG. 6, the superlattice structure includes two layers a1 and b1 of a well b1 and a barrier a1 in a multi-quantum well structure. The thickness of the barrier a1 of the multiple quantum well structure is relatively thick compared to the thickness of the well b1 while the thickness of the barrier a1 of the multiple quantum well structure is relatively thicker than that of the well b1, (a2, b2) all have a thin thickness of 5 nm or less. Due to the above-described characteristic, the multiple quantum well structure plays a role of confinement of electrons or holes as carriers into a well b1 located between the thick barrier a1, And facilitates the transport of the liquid.
Referring to FIG. 7, a light emitting diode device having an ohmic contact current spreading
Depending on the composition and the type of dopant constituting the
In general, the lower nitride-based cladding layer / the nitride-based active layer / the upper nitride-based cladding layer /
However, the material used for the ohmic contact current spreading layer (501 or 60) composed of the transparent electroconductive material located on the upper surface of the upper nitride-based clad layer (40) has a trade-off relationship between the transmittance and the electric conductivity have. That is, if the thickness of the ohmic contact current spreading layer (501 or 60) is decreased to increase the transmittance, the conductivity of the ohmic contact current spreading layer (501 or 60) is lowered. Conversely, the conductivity of the group III nitride- This causes a problem of degradation of device reliability.
Therefore, as a method of not using an ohmic contact current spreading layer composed of a transparent electrically conductive material, in the case of an optically transparent growth substrate, an electrically conductive material having a high reflectance is formed on the upper surface of the nitride- The ohmic contact current spreading
As shown in the figure, a group III nitride-based semiconductor light-emitting diode device having a flip chip structure includes an optically transparent
Generally, a light emitting diode device widely used by using group III nitride-based semiconductors is generated from ultraviolet to blue to green by using InGaN or AlGaN in the nitride-based
The present invention relates to a nitride-based cladding layer for a Group III nitride-based semiconductor light-emitting diode device, which comprises a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) Type cladding layer of the light-emitting structure for a group III nitride-based semiconductor light-emitting diode device, in order to solve the problems that arise in forming an ohmic contact current spreading layer having a high reflectivity and an ohmic contact interface, x Al y Ga 1-xy N (0? x, 0? y, x + y? 1) thin film structure composed of a superlattice structure, first, second and third ohmic contact current spreading layers on the semiconductor surface Group III nitride-based semiconductor light-emitting diode device having a flip-chip structure having a low driving voltage, a low leakage current, and a high external light-emitting efficiency characteristic, and a method of manufacturing the same.
The present invention relates to a semiconductor device comprising: a growth substrate; A lower nitride-based clad layer made of an n-type conductive group III nitride-based semiconductor, a nitride-based active layer made of another group III nitride-based semiconductor material, and a p-type conductive group III nitride-based semiconductor on the upper surface of the growth substrate A light-emitting structure for a light-emitting diode element comprising a top nitride-based clad layer; A superlattice structure formed on the upper surface of the light emitting structure for the light emitting diode device; And a thin film structure composed of first, second, and third ohmic contact current spreading layers formed on the top surface of the superlattice structure,
The superlattice structure is a multi-layer structure composed of
Wherein the ohmic contact current spreading layer comprises a group III nitride based conductive thin film structure which is a first ohmic contact current spreading layer, a transparent conductive thin film structure which is a second ohmic contact current spreading layer, a reflective layer which is a third ohmic contact current spreading layer, And a conductive thin-film structure. The group III nitride-based semiconductor light-emitting diode device includes a conductive thin film structure.
The present invention relates to a semiconductor device comprising: a growth substrate; A lower nitride-based clad layer made of an n-type conductive group III nitride-based semiconductor, a nitride-based active layer made of another group III nitride-based semiconductor material, and a p-type conductive group III nitride-based semiconductor on the upper surface of the growth substrate A light-emitting structure for a light-emitting diode element comprising a top nitride-based clad layer; A superlattice structure formed on the upper surface of the light emitting structure for the light emitting diode device; And a thin film structure composed of first, second, and third ohmic contact current spreading layers formed on the top surface of the superlattice structure,
The superlattice structure is a multi-layer composed of
Wherein the ohmic contact current spreading layer comprises a group III nitride based conductive thin film structure which is a first ohmic contact current spreading layer, a transparent conductive thin film structure which is a second ohmic contact current spreading layer, a reflective layer which is a third ohmic contact current spreading layer, And a conductive thin-film structure. The group III nitride-based semiconductor light-emitting diode device includes a conductive thin film structure.
And a light extraction structure in which a surface irregularity process is introduced on the top surface of the first or second ohmic contact current spreading layer in order to improve light extraction efficiency by changing incident angle of light generated in the light emitting diode device Another group III nitride-based semiconductor light-emitting diode device is proposed.
The present invention provides, as a constituent means for achieving the above-mentioned object, a light emitting device using group III nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) A method of manufacturing a diode (hereinafter, referred to as a group III nitride-based semiconductor light-emitting diode)
Preparing a growth substrate for growing a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device;
A nitride-based active layer made of a group III nitride-based semiconductor material having a different composition, and a nitride-based active layer made of a p-type conductive group III nitride semiconductor material Forming a light emitting structure for a group III nitride-based semiconductor light-emitting diode device in which a top nitride-based clad layer made of a nitride-based semiconductor material is successively stacked and grown;
Forming a superlattice structure on a semiconductor upper surface of a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor which is the upper nitride-based cladding layer of the light- ;
Forming a first ohmic contact current spreading layer on the superlattice structure;
Forming a second ohmic contact current spreading layer on top of the first ohmic contact current spreading layer;
Forming a third ohmic contact current spreading layer on top of the second ohmic contact current spreading layer;
Removing a portion of the first, second and third ohmic contact current spreading layers, the superlattice structure, the upper nitride-based clad layer, the nitride-based clad layer, and the lower nitride- Forming an n-type ohmic contact electrode and an electrode pad on a part of the upper surface of the lower nitride-based clad layer; And
And forming a p-type schottky contact electrode and an electrode pad on a part of the upper surface of the first, second, or third ohmic contact current spreading layer.
The present invention provides, as still another constituent means for achieving the above-mentioned object, a group III nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + (Hereinafter referred to as a group III nitride-based semiconductor light-emitting diode) element,
Preparing a growth substrate for growing a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device;
A nitride-based active layer made of a group III nitride-based semiconductor material having a different composition, and a nitride-based active layer made of a p-type conductive group III nitride semiconductor material Forming a light emitting structure for a group III nitride-based semiconductor light-emitting diode device in which a top nitride-based clad layer made of a nitride-based semiconductor material is successively stacked and grown;
Forming a superlattice structure on a semiconductor upper surface of a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor which is the upper nitride-based cladding layer of the light- ;
Forming a first ohmic contact current spreading layer on the superlattice structure;
Forming a second ohmic contact current spreading layer on top of the first ohmic contact current spreading layer;
Removing a portion of the first and second ohmic contact current spreading layers, the superlattice structure, the upper nitride-based clad layer, the nitride-based active layer, and the lower nitride-based clad layer and exposing the lower nitride- Next, an n-type ohmic contact electrode and an electrode pad are formed on a part of the upper surface of the lower nitride-based clad layer.
Forming a third ohmic contact current spreading layer on top of the second ohmic contact current spreading layer; And
And forming a p-type schottky contact electrode and an electrode pad on a part of the upper surface of the first, second, or third ohmic contact current spreading layer.
The present invention provides, as still another constituent means for achieving the above-mentioned object, a group III nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + (Hereinafter referred to as a group III nitride-based semiconductor light-emitting diode) element,
Preparing a growth substrate for growing a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device;
A nitride-based active layer made of a group III nitride-based semiconductor material having a different composition, and a nitride-based active layer made of a p-type conductive group III nitride semiconductor material Forming a light emitting structure for a group III nitride-based semiconductor light-emitting diode device in which a top nitride-based clad layer made of a nitride-based semiconductor material is successively stacked and grown;
Forming a superlattice structure on a semiconductor upper surface of a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor which is the upper nitride-based cladding layer of the light- ;
Forming a first ohmic contact current spreading layer on the superlattice structure;
Removing a portion of the first ohmic contact current spreading layer, the superlattice structure, the upper nitride-based clad layer, the nitride-based active layer, and the lower nitride-based clad layer, exposing the lower nitride-based clad layer to the atmosphere, Forming an n-type ohmic contact electrode and an electrode pad on a part of the upper surface of the lower nitride-based clad layer;
Forming a second ohmic contact current spreading layer on the top surface of the first ohmic contact current spreading layer
Forming a third ohmic contact current spreading layer on top of the second ohmic contact current spreading layer; And
And forming a p-type schottky contact electrode and an electrode pad on a part of the upper surface of the first, second, or third ohmic contact current spreading layer.
Alternatively, instead of the multi-layered superlattice structure, a superlattice structure of an n-type conductive InGaN single layer or a p-type conductive InGaN single layer having a thickness of 5 nm or less may be formed.
Wherein the ohmic contact current spreading layer comprises a first ohmic contact current spreading layer of a Group III nitride based conductive thin film structure, a second ohmic contact current spreading layer of a transparent conductive thin film structure, a third ohmic contact current spreading layer of a reflective conductive thin film structure, And a spreading layer.
Before forming the third ohmic contact current spreading layer, a light extracting structure in which surface irregularities are introduced on the top surface of the first or second ohmic contact current spreading layer composed of the group III nitride-based conductive thin film structure is formed It is possible.
The lower nitride-based clad layer, the nitride-based active layer, the upper nitride-based clad layer, the superlattice structure, and the first ohmic contact current spreading layer may be formed in situ using MOCVD, MBE, or HVPE equipment. Grow continuously.
In addition, the lower nitride-based clad layer, the nitride-based active layer, the upper nitride-based clad layer, and the superlattice structure are successively grown in an in-situ state using MOCVD, MBE, or HVPE equipment, The first ohmic contact current spreading layer may be formed in an ex situ state by using MOCVD, MBE, HVPE, sputter, evaporator or PLD equipment.
As described above, the present invention provides a group III nitride-based semiconductor light-emitting device (light-emitting diode) element having a flip chip structure, wherein the upper nitride-based cladding layer of the flip chip structure light- a first ohmic contact current spreading layer composed of a superlattice structure, a group III nitride-based conductive thin film structure, and a transparent conductive thin film layer on the semiconductor upper surface of y Ga 1-xy N (0? x, 0? y, And a third ohmic contact current spreading layer composed of a reflective conductive thin film structure to improve the light transmittance characteristic of the entire LED chip having a good flip chip structure, And the luminance of the light emitting element can be improved.
In addition, in a group III nitride-based semiconductor light-emitting diode device having a flip chip structure having a light extracting structure, a first or a second ohmic contact current spreading layer made of a group III nitride- based conductive thin film structure by wet or dry etching Since the surface irregularities can be easily formed on the upper surface, the total reflection light can be minimized inside the structure of the light emitting structure for a flip chip structure, so that the entire luminance characteristics of the LED device can be further improved.
Hereinafter, the group III nitride-based semiconductor light-emitting diode device manufactured according to the present invention will be described in detail with reference to the accompanying drawings.
1 is a cross-sectional view showing a first embodiment of a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device having a flip chip structure invented by the present invention.
Referring to FIG. 1, a light emitting structure A for a light emitting diode device having a flip chip structure according to a first embodiment of the present invention, which is grown on a
The
The lower nitride-based
The nitride-based
The nitride-based
The upper nitride-based
The
The
Further, each layer of the
A
The first ohmic contact current spreading
The light-emitting structure A for a light-emitting diode device having the flip chip structure is continuously grown in an in-situ state by using an apparatus such as MOCVD, MBE, HVPE, sputter, or PLD. The nitride-based
FIG. 2 is a cross-sectional view showing a second embodiment of a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device of a flip chip structure invented by the present invention.
Referring to FIG. 2, a light emitting structure B for a light emitting diode device having a flip chip structure according to a first embodiment of the present invention, which is grown on a
The
The lower nitride-based
The nitride-based
The nitride-based
The upper nitride-based
The
The
Further, each layer of the
A
The first ohmic contact current spreading
The light emitting structure B for the light emitting diode element having the flip chip structure is continuously grown in an in-situ state by using an apparatus such as MOCVD, MBE, HVPE, sputter, or PLD. The nitride-based
3 is a cross-sectional view of a group III nitride-based semiconductor light emitting diode device having a flip chip structure as a first embodiment manufactured by the present invention.
Referring to FIG. 3, a light emitting structure A for a light emitting diode device having a flip chip structure according to the first embodiment of the present invention is grown on an upper surface of a
For example, the lower nitride-based
The
The lower nitride-based
The nitride-based
The nitride-based
The upper nitride-based
The light emitting diode device has a structure in which the lower nitride-based
The
Further, each layer of the
A
The first ohmic contact current spreading
The second ohmic contact current spreading layer 120 is formed of a transparent conductive thin film structure. The transparent conductive thin film structure of the second ohmic contact current spreading layer 120 has a light transmittance of 70% or more in a wavelength band of 600 nm or less, such as ITO or ZnO, and has a sheet resistance of 50 Ω / Or a multi-layer having a thickness equal to or greater than the thickness of the substrate.
The third ohmic contact current spreading
The p-type schottky contact electrode and the
The n-type ohmic contact electrode and the
4 is a cross-sectional view of a group III nitride-based semiconductor light emitting diode device having a flip chip structure as a second embodiment manufactured by the present invention.
Referring to FIG. 4, a light emitting structure A for a light emitting diode element having a flip chip structure according to the first embodiment of the present invention is grown on the
For example, the lower nitride-based
The
The lower nitride-based
The nitride-based
The nitride-based
The upper nitride-based
The light emitting diode device has a structure in which the lower nitride-based
The
Further, each layer of the
A
The first ohmic contact current spreading
The light extracting structure 110 is formed on the upper surface of the first or second ohmic contact current spreading
The second ohmic contact current spreading layer 120 is formed of a transparent conductive thin film structure. The transparent conductive thin film structure of the second ohmic contact current spreading layer 120 has a light transmittance of 70% or more in a wavelength band of 600 nm or less, such as ITO or ZnO, and has a sheet resistance of 50 Ω / Or a multi-layer having a thickness equal to or greater than the thickness of the substrate.
The third ohmic contact current spreading
The p-type schottky contact electrode and the
The n-type ohmic contact electrode and the
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention defined in the following claims are also within the scope of the present invention.
1 is a cross-sectional view showing a first embodiment of a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device having a flip chip structure invented by the present invention,
FIG. 2 is a cross-sectional view showing a second embodiment of a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device having a flip chip structure invented by the present invention,
3 is a cross-sectional view showing a first embodiment of a group III nitride-based semiconductor light-emitting diode device having a flip chip structure manufactured according to the present invention,
4 is a cross-sectional view illustrating a flip chip structure group III nitride-based semiconductor light emitting diode device according to a second embodiment of the present invention,
5 is a cross-sectional view showing a typical example of a conventional Group III nitride-based semiconductor light-emitting diode device,
6 is a cross-sectional view for explaining a comparison between a multi-quantum well structure and a superlattice structure,
FIG. 7 is a cross-sectional view showing a typical example of a conventional Group III nitride-based semiconductor light-emitting diode device,
FIG. 8 is a cross-sectional view showing a representative example of a conventional group III nitride-based semiconductor light emitting diode device having a flip chip structure.
Claims (45)
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KR1020080033987A KR101449032B1 (en) | 2008-04-13 | 2008-04-13 | flip-chip structured group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them |
PCT/KR2009/001886 WO2009126010A2 (en) | 2008-04-12 | 2009-04-13 | Light emitting device |
US12/937,453 US9543467B2 (en) | 2008-04-12 | 2009-04-13 | Light emitting device |
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KR20040008216A (en) * | 2001-07-04 | 2004-01-28 | 니치아 카가쿠 고교 가부시키가이샤 | Nitride semiconductor device |
KR20070028095A (en) * | 2005-09-07 | 2007-03-12 | 엘지전자 주식회사 | Light emitting diode having low resistance |
JP2008060331A (en) | 2006-08-31 | 2008-03-13 | Rohm Co Ltd | Semiconductor luminescent element |
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KR20070028095A (en) * | 2005-09-07 | 2007-03-12 | 엘지전자 주식회사 | Light emitting diode having low resistance |
JP2008060331A (en) | 2006-08-31 | 2008-03-13 | Rohm Co Ltd | Semiconductor luminescent element |
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