KR20160093311A - Light emitting device, light emitting device package having the same, and light system having the same - Google Patents

Abstract

A light emitting device according to an embodiment includes a substrate, a light emitting structure which includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on the substrate, a current blocking layer on the light emitting structure, a light transmission electrode on the current blocking layer, a first electrode on the first conductivity type semiconductor layer and a second electrode on the light transmission electrode. The current blocking layer includes a nanoparticle layer on which a plurality of nanoparticles are formed. So, luminous efficiency can be improved.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device, a light emitting device package including the light emitting device,

Embodiments relate to a light emitting device, a light emitting device package including the same, and an illumination system including the same.

A light emitting diode is a pn junction diode in which electrical energy is converted into light energy. The light emitting diode can be produced as a compound semiconductor such as Group III and Group V on the periodic table. By controlling the composition ratio of the compound semiconductor, This is possible.

When the forward voltage is applied to the light emitting device, the electrons in the n-layer and the holes in the p-layer are coupled to emit energy corresponding to the energy gap between the conduction band and the valance band, Emitting device.

Nitride semiconductors have attracted great interest in the development of optical devices and high output electronic devices due to their high thermal stability and wide band gap energy. Particularly, a blue light emitting element, a green light emitting element, and an ultraviolet (UV) light emitting element using a nitride semiconductor are widely used for commercial use.

In a conventional light emitting device, a current blocking layer is provided under the second electrode to prevent current densification, thereby improving current spreading. A typical current blocking layer uses a transparent material such as SiO ₂ , which causes light generated in the light emitting structure to pass through the current blocking layer and be absorbed by the second electrode, resulting in loss of light.

Embodiments provide a light emitting device, a light emitting device package, and an illumination system having a nanoparticle layer and scattering light passing through the current blocking layer to improve light emitting efficiency.

A light emitting device according to an embodiment includes a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the substrate; a current blocking layer on the light emitting structure; Wherein the current blocking layer includes a nanoparticle layer on which a plurality of nanoparticles are formed, wherein the current blocking layer includes a first electrode and a second electrode on the first conductive semiconductor layer, have.

A light emitting device according to an embodiment includes a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the substrate; a current blocking layer on the light emitting structure; A transparent electrode on the first conductive semiconductor layer, a first electrode on the first conductive semiconductor layer, and a second electrode on the transparent electrode, wherein the transparent electrode includes a nanoparticle layer in which a plurality of nanoparticles are formed .

A method of fabricating a light emitting device includes depositing a metal layer having a width of 5 nm or more on a second conductivity type semiconductor layer, annealing the metal layer at 300 ° C or higher to form a plurality of nanoparticles, And forming an SiO2 layer on the nanoparticles.

The embodiment has a nanoparticle layer to scatter light passing through the current blocking layer, thereby improving the luminous efficiency.

In addition, the embodiment has an effect that the light absorption is reduced at the second electrode and the light extraction efficiency is improved.

1 is a cross-sectional view of a light emitting device according to an embodiment.
2 and 3 are views for explaining the nanoparticle layer.
4 and 5 are graphs of transmittance and reflectance of the light emitting device according to the embodiment.
6 is an IV graph of the light emitting device according to the embodiment.
7 is a graph of light output of the light emitting device according to the embodiment.
FIG. 8 is a diagram of luminous intensity of a light emitting device according to an embodiment.
9 is a cross-sectional view of a light emitting device according to another embodiment.
10 is a graph illustrating a method of manufacturing a light emitting device according to an embodiment.
11 is a cross-sectional view of a light emitting device package according to an embodiment.
12 and 13 are exploded perspective views showing embodiments of the illumination system including the light emitting device according to the embodiment.

In the description of the embodiments, each layer (film), region, pattern or structure is referred to as being "on" or "under" the substrate, each layer (film) Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

1 is a cross-sectional view of a light emitting device according to an embodiment.

Referring to FIG. 1, a light emitting device 100 according to an embodiment includes a substrate 105, a first conductive semiconductor layer 120 on the substrate 105, a first conductive semiconductor layer 120 on the substrate 105, A current blocking layer 160 on the light emitting structure 110 and a current blocking layer 160 on the light emitting structure 110. The light emitting structure 110 includes a first conductive semiconductor layer 130, a second conductive semiconductor layer 140 on the active layer 130, A first electrode 180 on the first conductivity type semiconductor layer 120 and a second electrode 190 on the transmissive electrode 170. The transmissive electrode 170 may include a transparent electrode 170,

In an embodiment, the nanoparticle layer 150 may include a plurality of nanoparticles of a metal with high reflectivity, and the plurality of nanoparticles may be at least one of Ag, Au, Pt, and Al, no. The shape of the plurality of nanoparticles may be at least one of a circle, an ellipse, and a polygon, but is not limited thereto.

The light emitting device 100 according to the embodiment includes the nanoparticle layer 150 including the highly reflective material in the current blocking layer 160 so that the light generated in the light emitting structure 110 is emitted to the second electrode 190 The light extraction efficiency can be increased by scattering the light before being absorbed.

The substrate 105 may be formed of a material having excellent thermal conductivity, or may be a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ O ₃ can be used as the substrate 105. A concave-convex structure may be formed on the substrate 105, and the cross-section of the concave-convex structure may be circular, elliptical or polygonal, but is not limited thereto.

At this time, a buffer layer (not shown) may be formed on the substrate 105. The buffer layer may mitigate the lattice mismatch between the material of the light emitting structure to be formed and the substrate 105. The material of the buffer layer may be a Group III-V compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN. ≪ / RTI >

The light emitting structure 110 may be disposed on the substrate 105. The light emitting structure 110 may include a first conductive semiconductor layer 120, an active layer 130, and a second conductive semiconductor layer 140.

The first conductivity type semiconductor layer 120 is formed of a Group III-V compound semiconductor doped with the first conductivity type dopant, and the first conductivity type semiconductor layer 120 is formed of In _x Al _y Ga _1-xy N (0 1, 0? Y? 1, 0? X + y? 1). The first conductive semiconductor layer 120 may be formed by stacking layers including at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, . The first conductivity type semiconductor layer 120 is an n-type semiconductor layer, and the first conductivity type dopant is an n-type dopant including Si, Ge, Sn, Se, and Te. An electrode may be further disposed on the first conductivity type semiconductor layer 120.

The active layer 130 is formed by the electron (or hole) injected through the first conductivity type semiconductor layer 120 and the hole (or electron) injected through the second conductivity type semiconductor layer 140, The light emitting layer is a layer that emits light due to a band gap difference of an energy band according to a forming material of the light emitting layer. The active layer 130 may be formed of any one of a single well structure, a multi-well structure, a quantum dot structure, and a quantum wire structure, but is not limited thereto.

The second conductive semiconductor layer 140 may include a semiconductor doped with a second conductive dopant such as In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + ). The second conductive semiconductor layer 140 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. The second conductivity type semiconductor layer 140 may be a p-type semiconductor layer, and the second conductivity type dopant may include Mg, Zn, Ca, Sr, and Ba as p-type dopants.

The second conductive semiconductor layer 140 may include a superlattice structure, and the superlattice structure may include an InGaN / GaN superlattice structure or an AlGaN / GaN superlattice structure. The superlattice structure of the second conductivity type semiconductor layer 140 may protect the active layer by diffusing a current contained in the voltage abnormally.

For example, the first conductive semiconductor layer 120 may be a p-type semiconductor layer, the second conductive semiconductor layer 140 may be an n-type semiconductor layer, As shown in FIG. A first conductive semiconductor layer having a polarity opposite to that of the second conductive semiconductor layer 140 may be further disposed on the second conductive semiconductor layer 140.

The light emitting structure 110 may have any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure. Here, p is a p-type semiconductor layer, and n is an n-type semiconductor layer, and the - includes a structure in which the p-type semiconductor layer and the n-type semiconductor layer are in direct contact or indirect contact.

The light emitting structure 110 may be formed in any one of a horizontal type, a vertical type, and a via hole type vertical type.

Although the light emitting structure 110 and the substrate 105 are described as separate components in the embodiment, the substrate 105 may be included in the constituent elements of the light emitting structure 110.

The current blocking layer 160 can prevent current flow from concentrating and improve the reliability of the light emitting device. The current blocking layer 160 may be formed of an oxide or a nitride. For example, the current blocking layer 160 may be formed of a material such as SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , And at least one of the groups may be selected. The current blocking layer 160 may overlap the second electrode 190 in the vertical direction and the horizontal width of the vertical section of the current blocking layer 160 may be larger than the horizontal width of the vertical section of the second electrode 190 have.

In an embodiment, the nanoparticle layer 150 may comprise a plurality of nanoparticles of highly reflective metal and may be disposed directly on the second conductive semiconductor layer 140. The plurality of nanoparticles may be at least one of Ag, Au, Pt, and Al, but is not limited thereto. The shape of the plurality of nanoparticles may be at least one of a circle, an ellipse, and a polygon, but is not limited thereto.

The light transmitting electrode 170 may be disposed on the current blocking layer 160. The light transmitting electrode 170 may include a light transmitting ohmic layer and may be formed of a single metal or a metal alloy, Or the like can be laminated in multiple layers. For example, the transparent electrode 170 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide indium gallium tin oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON nitride, AGZO (IGZO) , IrOx, RuOx, and NiO, and is not limited to these materials.

2 and 3 are views for explaining the nanoparticle layer.

Referring to FIGS. 2 and 3, FIG. 2 illustrates widths of nanoparticles, and FIG. 3 illustrates intervals between nanoparticles. Referring to FIG.

The nanoparticle layer 150 of the light emitting device according to the embodiment may be formed by depositing Ag metal of 5 nm or more on the second conductivity type semiconductor layer 140 and then annealing at 300 ° C. to form a plurality of Ag nanoparticles. The horizontal width W1 of each of the plurality of Ag nanoparticles may be 200 nm or more and 250 nm or less, but is not limited thereto.

In an embodiment, the gap W2 between the plurality of Ag nanoparticles may be 100 nm or more and 400 nm or less, but the present invention is not limited thereto.

4 and 5 are graphs of transmittance and reflectance of the light emitting device according to the embodiment.

Referring to FIG. 4, R1 is a graph showing transmittance of a light emitting device with respect to a wavelength according to a related art, and E1 is a graph showing transmittance of a light emitting device with respect to a wavelength according to an embodiment.

The prior art having no nanoparticle layer in the current blocking layer has a transmittance of 70% at a wavelength of 450 nm but an embodiment with a nanoparticle layer 150 in the current blocking layer has a transmittance of 55% at a wavelength of 450 nm And can have a 15% transmission difference.

That is, the light emitting device according to the embodiment may include a current blocking layer having a lower transmittance than the prior art by adding a nanoparticle layer 150 in the current blocking layer 160, and light generated from the light emitting structure 110 The current passing through the current blocking layer 160 and absorbed by the second electrode 190 can be improved.

Referring to FIG. 5, R2 is a graph showing the reflectivity of the light emitting device with respect to the wavelength according to the related art, and E2 is a graph showing the reflectivity of the light emitting device with respect to the wavelength according to the embodiment.

It is possible to have a reflectivity of 20% in each of the conventional art having no nanoparticle layer in the current blocking layer and in the embodiment having the nanoparticle layer 150 in the current blocking layer 160.

That is, even if the nanoparticle layer 150 is added to the current blocking layer 160, the light emitting device according to the embodiment can maintain a certain degree of reflectivity, and light emitted from the light emitting structure 110 is scattered by the nanoparticle layer 150 So that it is possible to have an effect to be improved against the problem of being absorbed by the second electrode.

6 is an I-V graph of the light emitting device according to the embodiment.

Referring to FIG. 6, R3 is an IV graph according to the related art having only a light-transmitting electrode, R4 is a IV graph according to the related art having a light-transmitting electrode and a current blocking layer, E3 is an IV Graph.

For example, when a current of 20 mA flows, the prior art including only a light-transmitting electrode has an operating voltage of 3.05 V, a conventional technology having a light-transmitting electrode and a current blocking layer, an operating voltage of 3.25 V, The operating voltage may be 3.1V. That is, although the operation voltage of the light emitting device according to the embodiment is higher than that of the prior art including only the light transmitting electrode, the operation voltage is reduced as compared with the prior art in which the light transmitting electrode and the current blocking layer are provided.

7 is a graph of light output of the light emitting device according to the embodiment.

Referring to FIG. 7, R5 is a conventional optical output graph including only a light-transmitting electrode, R6 is a conventional optical output graph having a light-transmitting electrode and a current blocking layer, and E4 is a light- FIG.

It can be seen that the light output of the light emitting device according to the embodiment is improved more than that of the prior art including only the light transmitting electrode. For example, when a current of 20 mA flows, the light output may increase by 11.9%.

In addition, it can be seen that the light emitting device according to the embodiment has improved light output as compared with the prior art having the light-transmitting electrode and the current blocking layer. For example, when a current of 20 mA flows, the light output can be increased by 7.0%.

FIG. 8 is a diagram of luminous intensity of a light emitting device according to an embodiment.

8 (a) to 8 (c), FIG. 8 (a) is a view showing a conventional light intensity with only a light-transmitting electrode, and FIG. 8 FIG. 8C is a diagram of luminous intensity of the light emitting device according to the embodiment. FIG.

The light emitting device according to the embodiment having the nanoparticle layer 150 has an effect of improving the light efficiency and increasing the luminous efficiency as compared with the prior art in which the nanoparticle layer is not provided or the current blocking layer is not provided.

9 is a cross-sectional view of a light emitting device according to another embodiment.

Referring to FIG. 9, the arrangement of the nanoparticle layer 150 differs from that of the embodiment shown in FIG. 1, and a description of overlapping configurations is omitted.

The light emitting device 100 according to the embodiment can arrange the nanoparticle layer 150a on the current blocking layer 160a and the current blocking layer 160a and the nanoparticle layer 150a on the light transmitting electrode 170a. It can be placed surrounded.

The nanoparticle layer 150 including the highly reflective material is implemented in the current blocking layer 160 to scatter light generated in the light emitting structure 110 before reaching the second electrode 190 and absorbing the light, Can be increased.

10 is a graph illustrating a method of manufacturing a light emitting device according to an embodiment.

Referring to FIG. 10, Ag metal having a width of 5 nm or more can be deposited on the second conductivity type semiconductor layer 140. And then annealed at 300 DEG C for 1 minute to form a plurality of Ag nanoparticles by the Ag metal. The plurality of nanoparticles may form a nanoparticle layer, and then the SiO ₂ layer may be formed on the plurality of Ag nanoparticles.

11 is a cross-sectional view of a light emitting device package according to an embodiment.

The light emitting device package according to the present invention may be mounted with the light emitting device having the structure as described above.

The light emitting device package 200 includes a package body 205, a first lead frame 213 and a second lead frame 214 disposed on the package body 205, A light emitting device 100 disposed on the first lead frame 213 and electrically connected to the first lead frame 213 and the second lead frame 214 and a molding member 230 surrounding the light emitting device 100.

The package body 205 may be formed of a silicon material, a synthetic resin material, or a metal material, and the inclined surface may be formed around the light emitting device 100.

The first lead frame 213 and the second lead frame 214 are electrically isolated from each other and provide power to the light emitting device 100. The first lead frame 213 and the second lead frame 214 may reflect the light generated from the light emitting device 100 to increase the light efficiency. And may also serve to discharge generated heat to the outside.

The light emitting device 100 may be disposed on the package body 205 or may be disposed on the first lead frame 213 or the second lead frame 214.

The light emitting device 100 may be electrically connected to the first lead frame 213 and / or the second lead frame 214 by any one of wire, flip chip, and die bonding methods. The light emitting device 100 is electrically connected to the first lead frame 213 and the second lead frame 214 through wires, but the present invention is not limited thereto.

The molding member 230 surrounds the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 230 may include a phosphor 232 to change the wavelength of light emitted from the light emitting device 100.

12 and 13 are exploded perspective views showing embodiments of the illumination system including the light emitting device according to the embodiment.

12, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, a socket 2800, . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include the light emitting device 100 or the light emitting device package 200 according to the present invention.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the light source unit 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension portion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the extension portion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800 .

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

13, the lighting apparatus according to the present invention includes a cover 3100, a light source unit 3200, a heat sink 3300, a circuit unit 3400, an inner case 3500, and a socket 3600 can do. The light source unit 3200 may include a light emitting device or a light emitting device package according to the embodiment.

The cover 3100 has a bulb shape and is hollow. The cover 3100 has an opening 3110. The light source unit 3200 and the member 3350 can be inserted through the opening 3110. [

The cover 3100 may be coupled to the heat discharging body 3300 and surround the light source unit 3200 and the member 3350. The light source part 3200 and the member 3350 may be shielded from the outside by the combination of the cover 3100 and the heat discharging body 3300. The coupling between the cover 3100 and the heat discharging body 3300 may be combined through an adhesive, or may be combined by various methods such as a rotational coupling method and a hook coupling method. The rotation coupling method is a method in which a screw thread of the cover 3100 is engaged with a thread groove of the heat dissipating body 3300 so that the cover 3100 is coupled to the heat dissipating body 3300 by rotation of the cover 3100 In the hook coupling method, the protrusion of the cover 3100 is inserted into the groove of the heat discharging body 3300, and the cover 3100 and the heat discharging body 3300 are coupled.

The cover 3100 is optically coupled to the light source unit 3200. Specifically, the cover 3100 may diffuse, scatter, or excite light from the light emitting device 3230 of the light source unit 3200. The cover 3100 may be a kind of optical member. Here, the cover 3100 may have a phosphor inside / outside or in the inside thereof to excite light from the light source part 3200.

The inner surface of the cover 3100 may be coated with a milky white paint. Here, the milky white paint may include a diffusing agent for diffusing light. The surface roughness of the inner surface of the cover 3100 may be larger than the surface roughness of the outer surface of the cover 3100. This is for sufficiently scattering and diffusing light from the light source part 3200.

The cover 3100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 3100 may be a transparent material that can be seen from the outside of the light source unit 3200 and the member 3350, and may be an invisible and opaque material. The cover 3100 may be formed, for example, by blow molding.

The light source unit 3200 is disposed on the member 3350 of the heat sink 3300 and may be disposed in a plurality of units. Specifically, the light source portion 3200 may be disposed on at least one of the plurality of side surfaces of the member 3350. The light source unit 3200 may be disposed at the upper end of the member 3350.

The light source portion 3200 may be disposed on three of the six sides of the member 3350. However, the present invention is not limited thereto, and the light source portion 3200 may be disposed on all the sides of the member 3350. The light source unit 3200 may include a substrate 3210 and a light emitting device 3230. The light emitting device 3230 may be disposed on one side of the substrate 3210.

The substrate 3210 has a rectangular plate shape, but is not limited thereto and may have various shapes. For example, the substrate 3210 may have a circular or polygonal plate shape. The substrate 3210 may be a printed circuit pattern on an insulator. For example, the substrate 3210 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB . ≪ / RTI > In addition, a COB (Chips On Board) type that can directly bond an unpackaged LED chip on a printed circuit board can be used. In addition, the substrate 3210 may be formed of a material that efficiently reflects light, or may be formed of a color whose surface efficiently reflects light, for example, white, silver, or the like. The substrate 3210 may be electrically connected to the circuit unit 3400 housed in the heat discharging body 3300. The substrate 3210 and the circuit portion 3400 may be connected, for example, via a wire. The wire may pass through the heat discharging body 3300 to connect the substrate 3210 and the circuit unit 3400.

The light emitting device 3230 may be a light emitting diode chip that emits red, green, or blue light, or a light emitting diode chip that emits UV light. Here, the light emitting diode chip may be a lateral type or a vertical type, and the light emitting diode chip may emit blue, red, yellow, or green light. .

The light emitting device 3230 may have a phosphor. The phosphor may be at least one of a garnet system (YAG, TAG), a silicate system, a nitride system, and an oxynitride system. Alternatively, the fluorescent material may be at least one of a yellow fluorescent material, a green fluorescent material, and a red fluorescent material.

The heat discharging body 3300 may be coupled to the cover 3100 to dissipate heat from the light source unit 3200. The heat discharging body 3300 has a predetermined volume and includes an upper surface 3310 and a side surface 3330. A member 3350 may be disposed on the upper surface 3310 of the heat discharging body 3300. An upper surface 3310 of the heat discharging body 3300 can be engaged with the cover 3100. The upper surface 3310 of the heat discharging body 3300 may have a shape corresponding to the opening 3110 of the cover 3100.

A plurality of radiating fins 3370 may be disposed on the side surface 3330 of the heat discharging body 3300. The radiating fin 3370 may extend outward from the side surface 3330 of the heat discharging body 3300 or may be connected to the side surface 3330. The heat dissipation fin 3370 may increase the heat dissipation area of the heat dissipator 3300 to improve heat dissipation efficiency. Here, the side surface 3330 may not include the radiating fin 3370.

The member 3350 may be disposed on the upper surface 3310 of the heat discharging body 3300. The member 3350 may be integral with the top surface 3310 or may be coupled to the top surface 3310. The member 3350 may be a polygonal column. Specifically, the member 3350 may be a hexagonal column. The hexagonal column member 3350 has an upper surface, a lower surface, and six sides. Here, the member 3350 may be a circular column or an elliptic column as well as a polygonal column. When the member 3350 is a circular column or an elliptic column, the substrate 3210 of the light source portion 3200 may be a flexible substrate.

The light source unit 3200 may be disposed on six sides of the member 3350. The light source unit 3200 may be disposed on all six sides and the light source unit 3200 may be disposed on some of the six sides. In Fig. 11, the light source unit 3200 is disposed on three sides of six sides.

The substrate 3210 is disposed on a side surface of the member 3350. The side surface of the member 3350 may be substantially perpendicular to the upper surface 3310 of the heat discharging body 3300. Accordingly, the upper surface 3310 of the substrate 3210 and the heat discharging body 3300 may be substantially perpendicular to each other.

The material of the member 3350 may be a material having thermal conductivity. This is to receive the heat generated from the light source 3200 quickly. The material of the member 3350 may be, for example, aluminum (Al), nickel (Ni), copper (Cu), magnesium (Mg), silver (Ag), tin (Sn) Or the member 3350 may be formed of a thermally conductive plastic having thermal conductivity. Thermally conductive plastics are advantageous in that they are lighter in weight than metals and have unidirectional thermal conductivity.

The circuit unit 3400 receives power from the outside and converts the supplied power to the light source unit 3200. The circuit unit 3400 supplies the converted power to the light source unit 3200. The circuit unit 3400 may be disposed on the heat discharging body 3300. Specifically, the circuit unit 3400 may be housed in the inner case 3500 and stored in the heat discharging body 3300 together with the inner case 3500. The circuit portion 3400 may include a circuit board 3410 and a plurality of components 3430 mounted on the circuit board 3410.

The circuit board 3410 has a circular plate shape, but is not limited thereto and may have various shapes. For example, the circuit board 3410 may be in the shape of an oval or polygonal plate. Such a circuit board 3410 may be one in which a circuit pattern is printed on an insulator.

The circuit board 3410 is electrically connected to the substrate 3210 of the light source unit 3200. The electrical connection between the circuit board 3410 and the substrate 3210 may be connected by wire, for example. The wires may be disposed inside the heat discharging body 3300 to connect the circuit board 3410 and the substrate 3210.

The plurality of components 3430 include, for example, a DC converter for converting AC power supplied from an external power source to DC power, a driving chip for controlling the driving of the light source 3200, An electrostatic discharge (ESD) protection device, and the like.

The inner case 3500 houses the circuit portion 3400 therein. The inner case 3500 may have a receiving portion 3510 for receiving the circuit portion 3400.

The receiving portion 3510 may have a cylindrical shape as an example. The shape of the accommodating portion 3510 may vary depending on the shape of the heat discharging body 3300. The inner case 3500 can be housed in the heat discharging body 3300. The receiving portion 3510 of the inner case 3500 may be received in a receiving portion formed on the lower surface of the heat discharging body 3300.

The inner case 3500 may be coupled to the socket 3600. The inner case 3500 may have a connection portion 3530 that engages with the socket 3600. The connection portion 3530 may have a threaded structure corresponding to the thread groove structure of the socket 3600. The inner case 3500 is nonconductive. Therefore, electrical short circuit between the circuit portion 3400 and the heat discharging body 3300 is prevented. For example, the inner case 3500 may be formed of plastic or resin.

The socket 3600 may be coupled to the inner case 3500. Specifically, the socket 3600 may be engaged with the connection portion 3530 of the inner case 3500. The socket 3600 may have the same structure as a conventional incandescent bulb. The circuit portion 3400 and the socket 3600 are electrically connected. The electrical connection between the circuit part 3400 and the socket 3600 may be connected via a wire. Accordingly, when external power is applied to the socket 3600, the external power may be transmitted to the circuit unit 3400. The socket 3600 may have a screw groove structure corresponding to the threaded structure of the connection portion 3550.

110; Board
120; Protective layer
130; Light emitting structure
140; The second conductive type semiconductor layer
150; Active layer
160; The first conductive semiconductor layer
170; The first electrode
175; The first electrode layer
180; The second electrode
185; The second electrode layer

Claims (15)

Board;
A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the substrate;
A current blocking layer on the light emitting structure;
A light-transmitting electrode on the current blocking layer; And
A first electrode on the first conductivity type semiconductor layer and a second electrode on the light-transmitting electrode,
Wherein the current blocking layer comprises a nanoparticle layer having a plurality of nanoparticles formed therein. The method according to claim 1,
Wherein the width of each of the plurality of nanoparticles is 200 nm or more and 250 nm or less. The method according to claim 1,
Wherein a distance between each of the plurality of nanoparticles is 100 nm or more and 400 nm or less. The method according to claim 1,
Wherein a width of the current blocking layer is equal to a width of the nanoparticle layer. The method according to claim 1,
Wherein the shape of each of the plurality of nanoparticles includes at least one of a circular shape, an elliptical shape, and a polygonal shape. The method according to claim 1,
Wherein the shape of each of the plurality of nanoparticles is random. Board;
A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the substrate;
A current blocking layer on the light emitting structure;
A light-transmitting electrode on the current blocking layer; And
A first electrode on the first conductivity type semiconductor layer and a second electrode on the light-transmitting electrode,
Wherein the light transmitting electrode comprises a nanoparticle layer having a plurality of nanoparticles formed therein. 8. The method of claim 7,
Wherein the width of each of the plurality of nanoparticles is 200 nm or more and 250 nm or less. 8. The method of claim 7,
Wherein a distance between each of the plurality of nanoparticles is 100 nm or more and 400 nm or less. 8. The method of claim 7,
Wherein a width of the current blocking layer is equal to a width of the nanoparticle layer. 8. The method of claim 7,
Wherein the shape of each of the plurality of nanoparticles includes at least one of a circular shape, an elliptical shape, and a polygonal shape. 8. The method of claim 7,
Wherein the shape of each of the plurality of nanoparticles is random. 13. An illumination system comprising the light-emitting device according to any one of claims 1 to 12. Depositing a metal layer having a width of 5 nm or more on the second conductivity type semiconductor layer;
Annealing the metal layer at 300 DEG C or higher to form a plurality of nanoparticles; And
And forming an SiO2 layer on the plurality of nanoparticles. 15. The method of claim 14,
Wherein the metal layer comprises at least one of Ag, Au, Pt, and Al.

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