KR20140090860A

KR20140090860A - Light emitting device

Info

Publication number: KR20140090860A
Application number: KR1020130003010A
Authority: KR
Inventors: 문지형; 송준오; 최광기; 정환희; 한재천; 이상열; 김소정; 이고은
Original assignee: 엘지이노텍 주식회사
Priority date: 2013-01-10
Filing date: 2013-01-10
Publication date: 2014-07-18

Abstract

The embodiment of the present invention relates to a light emitting device, a manufacturing method thereof, a light emitting device package, and a lighting system. The light emitting device according to the embodiment of the present invention comprises: a light emitting structure (110) which includes a first conductive semiconductor layer (112), an active layer (114), and a second conductive semiconductor layer (116); a branch electrode (152) which is formed on the light emitting structure (110); a pad electrode (150) which is electrically connected to the branch electrode (152); and a passivation layer (120) which is formed on the branch electrode (152) and the upper and lateral sides of the light emitting structure (110).

Description

[0001] LIGHT EMITTING DEVICE [0002]

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

A light emitting device is a p-n junction diode in which electrical energy is converted into light energy, and various colors can be realized by controlling the composition ratio of compound semiconductors such as group III and group V on the periodic table.

When the forward voltage is applied, the light emitting device emits light energy corresponding to the band gap energy of the conduction band and the valance band by combining the electron of the n layer and the hole of the p layer. can do.

Nitride semiconductors have attracted great interest in the development of optical devices and high output electronic devices due to their high thermal stability and wide band gap energy. For example, a blue light emitting element, a green light emitting element, and an ultraviolet (UV) light emitting element using a nitride semiconductor are commercially available and widely used.

According to the related art, the hermeticity, stability, reliability, etc. of the light emitting element are important in the development of a high efficiency and high output light emitting device, but these requirements are not properly solved.

Embodiments provide a light emitting device having excellent airtightness and stability, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

In addition, embodiments of the present invention provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of improving external light extraction efficiency as well.

A light emitting device according to an embodiment includes a light emitting structure 110 including a first conductive semiconductor layer 112, an active layer 114, and a second conductive semiconductor layer 116; A branched electrode 152 formed on the light emitting structure 110; A pad electrode 150 electrically connected to the branch electrode 152; And a passivation layer 120 formed on a side surface and an upper surface of the light emitting structure 110 and on the branched electrodes 152.

According to the embodiments, it is possible to provide a light emitting device having excellent airtightness and stability, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

In addition, the embodiments can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of improving external light extraction efficiency as well.

1 is a cross-sectional view of a light emitting device according to an embodiment.
Figs. 2 to 4 are partial enlarged views of a light emitting device according to an embodiment. Fig.
FIG. 5 and FIG. 6 are exemplary analytical photographs of a light emitting device according to an embodiment. FIG.
7 is a sectional view of a light emitting device package according to an embodiment.
8 to 10 show a lighting device according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

(Example)

1 is a cross-sectional view of a light emitting device 100 according to an embodiment, and FIGS. 2 to 4 are partial enlarged views of a light emitting device according to an embodiment.

3 is an enlarged view of a region of the pad electrode 150 of the light emitting device according to the embodiment, and FIG. 4 is an enlarged view of the region of the light emitting device 110 of FIG. Sectional view of the branch electrode 152 region of the light emitting device according to the embodiment.

The light emitting device 100 according to the embodiment includes a light emitting structure 110 including a first conductivity type semiconductor layer 112, an active layer 114 and a second conductivity type semiconductor layer 116; A pad electrode 150 formed on the branched electrode 152; And a passivation layer 120 formed on a side surface and an upper surface of the light emitting structure 110 and on the branched electrodes 152.

The first conductive semiconductor layer 112 may include a semiconductor material having a composition formula of In _x Al _y Ga ₁ _-x- _y N (0? X? 1, 0? _Y? 1, 0? _X + . For example, the first conductive semiconductor layer 112 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, .

The active layer 114 may be formed of at least one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure. For example, the active layer 114 may be formed with a multiple quantum well structure by injecting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) But is not limited thereto.

The well layer / barrier layer of the active layer 114 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP But is not limited thereto. The well layer may be formed of a material having a band gap lower than the band gap of the barrier layer.

The second conductive semiconductor layer 116 may be formed of a semiconductor compound.

For example, the second conductive semiconductor layer 116 may have a composition formula of In _x Al _y Ga ₁ _-x- _y N (0? X? 1, 0? _Y? 1, 0? _X + And the like. When the second conductive semiconductor layer 116 is a p-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as p-type dopants.

In an embodiment, the first conductive semiconductor layer 112 may be an n-type semiconductor layer, and the second conductive semiconductor layer 116 may be a p-type semiconductor layer. Also, on the second conductive semiconductor layer 116, a semiconductor (e.g., an n-type semiconductor) (not shown) having a polarity opposite to that of the second conductive type may be formed. Accordingly, the light emitting structure 110 may have any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

The second electrode layer 130 may be formed on the lower side of the light emitting structure 110.

The second electrode layer 130 may include an ohmic layer 131, a reflective layer 132, a bonding layer (not shown), a second substrate 133, and the like.

For example, the ohmic layer 131 may be formed by laminating a single metal, a metal alloy, a metal oxide, or the like so as to efficiently perform carrier injection, and the ohmic layer 131 may be formed by an electrical contact Can be formed of an excellent material.

For example, the ohmic layer 131 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (ZnO), indium gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON nitride, AGZO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Ni, IrOx / Au, and Ni / IrOx / , Au, and Hf, and is not limited to such a material.

Also, the reflective layer 132 may be formed of a material excellent in reflectivity and excellent in electrical contact. For example, the reflective layer 132 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf.

The reflection layer 132 may be formed of a multilayer structure using a metal or an alloy and a light transmitting conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, or ATO. For example, IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni, or the like.

When the second electrode layer 130 includes a coupling layer (not shown), the reflection layer 132 may function as a coupling layer, or the coupling layer may be formed of a material having a strong coupling force. For example, the bonding layer may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu,

The second electrode layer 130 may include a second substrate 133. For example, the second substrate 133 may be formed of at least one selected from the group consisting of copper (Cu), gold (Au), copper alloy, nickel-nickel, copper- GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, etc.).

In an embodiment, the protective layer 140 may be provided on a peripheral region of the upper surface of the second electrode layer 130. The passivation layer 140 may be formed in a peripheral region between the light emitting structure 110 and the second electrode layer 130 and may be formed of an electrically insulating material such as ZnO or SiO ₂ , Or may be formed of a semiconductor material.

The passivation layer 140 may partially overlap the light emitting structure 110 in the vertical direction.

The protective layer 140 increases the distance between the second electrode layer 130 and the active layer 114 at a side surface. Therefore, it is possible to reduce the possibility of electrical short-circuiting between the second electrode layer 130 and the active layer 114.

In addition, when the isolation layer 140 is subjected to isolation etching in order to separate the light emitting structure 110 into unit chips in a chip separation process. A fragment generated in the second electrode layer 130 is attached between the second conductive semiconductor layer 116 and the active layer 114 or between the active layer 114 and the first conductive semiconductor layer 112 It is possible to prevent the occurrence of an electrical short circuit. The protective layer 140 may be formed of a material that is not cracked or broken when it is etched or a material having electrical insulation that does not cause an electrical short circuit even when a small amount of broken or small pieces of debris are generated.

The light emitting device 100 according to the embodiment includes the passivation layer 120 formed on the side surface and the upper surface of the light emitting structure 110 and the branch electrode 152 as shown in FIG. The stability and reliability can be improved.

The embodiment also includes a first irregular pattern P1 formed on the side surface of the light emitting structure 110 and a second irregular pattern P2 formed on the upper surface of the light emitting structure 110 to increase the coupling force with the passivation, The airtightness and stability of the light emitting element can be maximized.

According to the embodiment, the passivation layer 120 is formed with the first concave-convex pattern P1, the first concave-convex structure Q1 and the second concave-convex structure Q2 corresponding to the second concave-convex pattern P2 The external extraction efficiency of light emitted from the light emitting structure can be increased.

3, the passivation layer 120 is formed on the upper surface of the pad electrode 150 in a region other than the bonding pad region W, thereby further enhancing the airtightness.

In addition, according to the embodiment, the pad electrode 150 may have a third concavo-convex pattern P3 on the upper surface including the bonding pad region W. As a result, the bonding force can be increased in the region (region other than the bonding pad region) in contact with the passivation layer 120, and the bonding force with the wire (not shown) can be increased in the wire bonding region.

In addition, in the embodiment, the passivation layer 120 may include a third concavo-convex structure Q3 corresponding to the third concavo-convex pattern P3 in a region other than the bonding pad region.

In addition, according to the embodiment, the passivation layer 120 may be covered except for the bonding pad region which is wire-bonded in the pad electrode 150, and the pad electrode may be covered with the passivation layer So that the side surface of the pad electrode can be protected.

4, the fourth concavo-convex pattern P4 formed on the upper surface of the branched electrode 152 may further include a bonding strength with respect to the passivation layer 120. [

In addition, according to the embodiment, the passivation layer 120 may have a fourth concave-convex structure Q4 corresponding to the fourth concavo-convex pattern P4.

7 is a cross-sectional view of a light emitting device package 200 according to an embodiment. In the light emitting device package according to the embodiment, the light emitting device 100 having the structure as described above may be mounted.

The light emitting device package 200 according to the embodiment includes a package body 205, a third electrode layer 213 and a fourth electrode layer 214 disposed on the package body 205, A light emitting device 100 disposed on the first electrode layer 205 and electrically connected to the third electrode layer 213 and the fourth electrode layer 214 and a molding member 230 surrounding the light emitting device 100.

The package body 205 may be formed of a silicon material, a synthetic resin material, or a metal material, and the inclined surface may be formed around the light emitting device 100.

The third electrode layer 213 and the fourth electrode layer 214 are electrically isolated from each other and provide power to the light emitting device 100. The third electrode layer 213 and the fourth electrode layer 214 may function to increase light efficiency by reflecting the light generated from the light emitting device 100, And may serve to discharge heat to the outside.

The light emitting device 100 may be disposed on the package body 205 or may be disposed on the third electrode layer 213 or the fourth electrode layer 214.

The light emitting device 100 may be electrically connected to the third electrode layer 213 and / or the fourth electrode layer 214 by a wire, flip chip, or die bonding method. The light emitting device 100 is electrically connected to the third electrode layer 213 and the fourth electrode layer 214 through wires. However, the present invention is not limited thereto.

The molding member 230 surrounds the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 230 may include a phosphor 232 to change the wavelength of light emitted from the light emitting device 100.

8 to 10 are exploded perspective views illustrating embodiments of an illumination system including a light emitting device according to an embodiment.

8, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, a socket 2800, . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include the light emitting device 100 or the light emitting device package 200 according to the present invention.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the light source unit 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension portion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the extension portion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800 .

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

9, the lighting apparatus according to the embodiment includes a cover 3100, a light source portion 3200, a heat sink 3300, a circuit portion 3400, an inner case 3500, and a socket 3600 can do. The light source unit 3200 may include a light emitting device or a light emitting device package according to the embodiment.

The cover 3100 has a bulb shape and is hollow. The cover 3100 has an opening 3110. The light source unit 3200 and the member 3350 can be inserted through the opening 3110. [

The cover 3100 may be coupled to the heat discharging body 3300 and surround the light source unit 3200 and the member 3350. The light source part 3200 and the member 3350 may be shielded from the outside by the combination of the cover 3100 and the heat discharging body 3300.

The coupling between the cover 3100 and the heat discharging body 3300 may be combined through an adhesive, or may be combined by various methods such as a rotational coupling method and a hook coupling method. The rotation coupling method is a method in which a screw thread of the cover 3100 is engaged with a thread groove of the heat dissipating body 3300 so that the cover 3100 is coupled to the heat dissipating body 3300 by rotation of the cover 3100 In the hook coupling method, the protrusion of the cover 3100 is inserted into the groove of the heat discharging body 3300, and the cover 3100 and the heat discharging body 3300 are coupled.

The cover 3100 is optically coupled to the light source unit 3200. Specifically, the cover 3100 may diffuse, scatter, or excite light from the light emitting device 3230 of the light source unit 3200. The cover 3100 may be a kind of optical member. Here, the cover 3100 may have a phosphor inside / outside or in the inside thereof to excite light from the light source part 3200.

The inner surface of the cover 3100 may be coated with a milky white paint. Here, the milky white paint may include a diffusing agent for diffusing light. The surface roughness of the inner surface of the cover 3100 may be larger than the surface roughness of the outer surface of the cover 3100. This is for sufficiently scattering and diffusing light from the light source part 3200.

The cover 3100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 3100 may be a transparent material that can be seen from the outside of the light source unit 3200 and the member 3350, and may be an invisible and opaque material. The cover 3100 may be formed, for example, by blow molding.

The light source unit 3200 is disposed on the member 3350 of the heat sink 3300 and may be disposed in a plurality of units. Specifically, the light source portion 3200 may be disposed on at least one of the plurality of side surfaces of the member 3350. The light source unit 3200 may be disposed at the upper end of the member 3350.

The light source portion 3200 may be disposed on three of the six sides of the member 3350. However, the present invention is not limited thereto, and the light source portion 3200 may be disposed on all the sides of the member 3350. The light source unit 3200 may include a substrate 3210 and a light emitting device 3230. The light emitting device 3230 may be disposed on one side of the substrate 3210.

The substrate 3210 has a rectangular plate shape, but is not limited thereto and may have various shapes. For example, the substrate 3210 may have a circular or polygonal plate shape.

The substrate 3210 may be a printed circuit pattern on an insulator. For example, the substrate 3210 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB . &Lt; / RTI > In addition, a COB (Chips On Board) type that can directly bond an unpackaged LED chip on a printed circuit board can be used. In addition, the substrate 3210 may be formed of a material that efficiently reflects light, or may be formed of a color whose surface efficiently reflects light, for example, white, silver, or the like.

The substrate 3210 may be electrically connected to the circuit unit 3400 housed in the heat discharging body 3300. The substrate 3210 and the circuit portion 3400 may be connected, for example, via a wire. The wire may pass through the heat discharging body 3300 to connect the substrate 3210 and the circuit unit 3400.

The light emitting device 3230 may be a light emitting diode chip that emits red, green, or blue light, or a light emitting diode chip that emits UV light. Here, the light emitting diode chip may be a lateral type or a vertical type, and the light emitting diode chip may emit blue, red, yellow, or green light. .

The light emitting device 3230 may have a phosphor. The phosphor may be at least one of a garnet system (YAG, TAG), a silicate system, a nitride system, and an oxynitride system. Alternatively, the fluorescent material may be at least one of a yellow fluorescent material, a green fluorescent material, and a red fluorescent material.

The heat discharging body 3300 may be coupled to the cover 3100 to dissipate heat from the light source unit 3200. The heat discharging body 3300 has a predetermined volume and includes an upper surface 3310 and a side surface 3330. A member 3350 may be disposed on the upper surface 3310 of the heat discharging body 3300. An upper surface 3310 of the heat discharging body 3300 can be engaged with the cover 3100. The upper surface 3310 of the heat discharging body 3300 may have a shape corresponding to the opening 3110 of the cover 3100.

A plurality of radiating fins 3370 may be disposed on the side surface 3330 of the heat discharging body 3300. The radiating fin 3370 may extend outward from the side surface 3330 of the heat discharging body 3300 or may be connected to the side surface 3330. The heat dissipation fin 3370 may increase the heat dissipation area of the heat dissipator 3300 to improve heat dissipation efficiency. Here, the side surface 3330 may not include the radiating fin 3370.

The member 3350 may be disposed on the upper surface 3310 of the heat discharging body 3300. The member 3350 may be integral with the top surface 3310 or may be coupled to the top surface 3310. The member 3350 may be a polygonal column. Specifically, the member 3350 may be a hexagonal column. The hexagonal column member 3350 has an upper surface, a lower surface, and six sides.

Here, the member 3350 may be a circular column or an elliptic column as well as a polygonal column. When the member 3350 is a circular column or an elliptic column, the substrate 3210 of the light source portion 3200 may be a flexible substrate.

The light source unit 3200 may be disposed on six sides of the member 3350. The light source unit 3200 may be disposed on all six sides and the light source unit 3200 may be disposed on some of the six sides. In Fig. 11, the light source unit 3200 is disposed on three sides of six sides.

The substrate 3210 is disposed on a side surface of the member 3350. The side surface of the member 3350 may be substantially perpendicular to the upper surface 3310 of the heat discharging body 3300. Accordingly, the upper surface 3310 of the substrate 3210 and the heat discharging body 3300 may be substantially perpendicular to each other.

The material of the member 3350 may be a material having thermal conductivity. This is to receive the heat generated from the light source 3200 quickly. The material of the member 3350 may be, for example, aluminum (Al), nickel (Ni), copper (Cu), magnesium (Mg), silver (Ag), tin (Sn) Or the member 3350 may be formed of a thermally conductive plastic having thermal conductivity. Thermally conductive plastics are advantageous in that they are lighter in weight than metals and have unidirectional thermal conductivity.

The circuit unit 3400 receives power from the outside and converts the supplied power to the light source unit 3200. The circuit unit 3400 supplies the converted power to the light source unit 3200. The circuit unit 3400 may be disposed on the heat discharging body 3300.

Specifically, the circuit unit 3400 may be housed in the inner case 3500 and stored in the heat discharging body 3300 together with the inner case 3500. The circuit portion 3400 may include a circuit board 3410 and a plurality of components 3430 mounted on the circuit board 3410.

The circuit board 3410 has a circular plate shape, but is not limited thereto and may have various shapes. For example, the circuit board 3410 may be in the shape of an oval or polygonal plate. Such a circuit board 3410 may be one in which a circuit pattern is printed on an insulator.

The circuit board 3410 is electrically connected to the substrate 3210 of the light source unit 3200. The electrical connection between the circuit board 3410 and the substrate 3210 may be connected by wire, for example. The wires may be disposed inside the heat discharging body 3300 to connect the circuit board 3410 and the substrate 3210.

The plurality of components 3430 include, for example, a DC converter for converting AC power supplied from an external power source to DC power, a driving chip for controlling the driving of the light source 3200, An electrostatic discharge (ESD) protection device, and the like.

The inner case 3500 houses the circuit portion 3400 therein. The inner case 3500 may have a receiving portion 3510 for receiving the circuit portion 3400.

The receiving portion 3510 may have a cylindrical shape as an example. The shape of the accommodating portion 3510 may vary depending on the shape of the heat discharging body 3300. The inner case 3500 may be housed in the heat discharging body 3300. The receiving portion 3510 of the inner case 3500 may be received in a receiving portion formed on the lower surface of the heat discharging body 3300.

The inner case 3500 may be coupled to the socket 3600. The inner case 3500 may have a connection portion 3530 that engages with the socket 3600. The connection portion 3530 may have a threaded structure corresponding to the thread groove structure of the socket 3600. The inner case 3500 is nonconductive. Therefore, electrical short circuit between the circuit portion 3400 and the heat discharging body 3300 is prevented. For example, the inner case 3500 may be formed of plastic or resin.

The socket 3600 may be coupled to the inner case 3500. Specifically, the socket 3600 may be engaged with the connection portion 3530 of the inner case 3500. The socket 3600 may have the same structure as a conventional incandescent bulb. The circuit portion 3400 and the socket 3600 are electrically connected. The electrical connection between the circuit part 3400 and the socket 3600 may be connected via a wire. Accordingly, when external power is applied to the socket 3600, the external power may be transmitted to the circuit unit 3400. The socket 3600 may have a screw groove structure corresponding to the threaded structure of the connection portion 3550.

10, the backlight unit 1200 includes a light guide plate 1210, a light emitting module unit 1240 for providing light to the light guide plate 1210, But it is not limited to a reflective member 1220 below the light guide plate 1210 and a bottom cover 1230 for accommodating the light guide plate 1210, the light emitting module unit 1240 and the reflective member 1220.

The light guide plate 1210 serves to diffuse light into a surface light source. The light guide plate 1210 may be made of a transparent material such as acrylic resin such as PMMA (polymethyl methacrylate), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. &Lt; / RTI >

The light emitting module 1240 provides light to at least one side of the light guide plate 1210 and ultimately acts as a light source of a display device in which the backlight unit is disposed.

The light emitting module 1240 may be in contact with the light guide plate 1210, but is not limited thereto. Specifically, the light emitting module 1240 includes a substrate 1242 and a plurality of light emitting device packages 200 mounted on the substrate 1242. The substrate 1242 is mounted on the light guide plate 1210, But is not limited to.

The substrate 1242 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1242 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like.

The plurality of light emitting device packages 200 may be mounted on the substrate 1242 such that a light emitting surface on which the light is emitted is spaced apart from the light guiding plate 1210 by a predetermined distance.

The reflective member 1220 may be formed under the light guide plate 1210. The reflection member 1220 reflects the light incident on the lower surface of the light guide plate 1210 so as to face upward, thereby improving the brightness of the backlight unit. The reflective member 1220 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto.

The bottom cover 1230 may receive the light guide plate 1210, the light emitting module 1240, and the reflective member 1220. For this purpose, the bottom cover 1230 may be formed in a box shape having an opened upper surface, but the present invention is not limited thereto.

The bottom cover 1230 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

The first conductive semiconductor layer 112, the active layer 114,
The second conductivity type semiconductor layer 116, the light emitting structure 110,
The branch electrode 152, the pad electrode 150,
The passivation layer 120, the first concavo-convex pattern P1,
The second irregular pattern P2, the third irregular pattern P3,
The fourth irregular pattern P4, the bonding pad area W,
The first uneven structure Q1, the second uneven structure Q2,
The third uneven structure Q3, the fourth uneven structure Q4,

Claims

A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
A branched electrode formed on the light emitting structure;
A pad electrode electrically connected to the branch electrode; And
And a passivation layer formed on a side surface and an upper surface of the light emitting structure and on the branched electrodes.

The method according to claim 1,
A first irregular pattern formed on a side surface of the light emitting structure; And
And a second concave-convex pattern formed on an upper surface of the light-emitting structure.

3. The method of claim 2,
The first concavo-convex pattern, the first concavo-convex structure corresponding to the second concavo-convex pattern, and the second concavo-convex structure are formed on the passivation layer.

The method according to claim 1,
And a fourth concavo-convex pattern formed on an upper surface of the branch electrode.

5. The method of claim 4,
And a fourth concavo-convex structure corresponding to the fourth concavo-convex pattern is formed on the passivation layer.

The method according to claim 1,
The passivation layer
Wherein the pad electrode is formed in a region other than the bonding pad region on the upper surface.

The method according to claim 6,
Wherein the pad electrode comprises:
And a third concavo-convex pattern on an upper surface including the bonding pad region.

8. The method of claim 7,
The passivation layer formed in an area other than the bonding pad area may be formed,
And a third concave-convex structure corresponding to the third concave-convex pattern.