KR20130125536A - Light emitting device, light emitting device package, and light unit - Google Patents

Abstract

A light emitting according to the embodiment comprises; a light emitting structure which includes a first conductive semiconductor layer, an active layer formed under the first conductive semiconductor, and a second conductive semiconductor layer formed under the active layer; a first reflective electrode which is arranged under the light emitting structure; a second reflective electrode which is arranged under the light emitting structure and arranged under the circumference of the first reflective electrode and under the first reflective electrode.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting device, a light emitting device package,

Embodiments relate to a light emitting device, a light emitting device package, and a light unit.

Light emitting diodes (LEDs) are widely used as light emitting devices. Light emitting diodes convert electrical signals into light, such as infrared, visible, and ultraviolet, using the properties of compound semiconductors.

As the light efficiency of a light emitting device is increased, a light emitting device is applied to various fields including a display device and a lighting device.

Embodiments provide a light emitting device, a light emitting device package, and a light unit capable of improving light extraction efficiency.

The light emitting device according to the embodiment may include a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; A first reflective electrode disposed under the light emitting structure; A second reflective electrode disposed below the light emitting structure and disposed around the first reflective electrode and below the first reflective electrode; .

A light emitting device package according to an embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting element; A light emitting structure including a first conductivity type semiconductor layer, an active layer below the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer below the active layer; A first reflective electrode disposed under the light emitting structure; A second reflective electrode disposed below the light emitting structure and disposed around the first reflective electrode and below the first reflective electrode; .

A light unit according to an embodiment includes a substrate; A light emitting element disposed on the substrate; An optical member through which the light provided from the light emitting element passes; A light emitting structure including a first conductive type semiconductor layer, an active layer below the first conductive type semiconductor layer, and a second conductive type semiconductor layer below the active layer; A first reflective electrode disposed under the light emitting structure; A second reflective electrode disposed below the light emitting structure and disposed around the first reflective electrode and below the first reflective electrode; .

The light emitting device, the light emitting device package, and the light unit according to the embodiments have an advantage of improving light extraction efficiency.

1 is a view illustrating a light emitting device according to an embodiment.
2 to 5 are views showing a method of manufacturing a light emitting device according to an embodiment.
6 is a view showing a modification of the light emitting device according to the embodiment.
7 is a view illustrating a light emitting device package according to an embodiment.
8 is a view showing a display device according to the embodiment.
9 is a view showing another example of the display device according to the embodiment.
10 to 12 are views showing the lighting apparatus according to the embodiment.
13 and 14 are views illustrating another example of the lighting apparatus according to the embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

The thickness and size of each layer in the drawings may be exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device, a light emitting device package, a light unit, and a method of manufacturing a light emitting device according to embodiments will be described in detail with reference to the accompanying drawings.

1 is a view illustrating a light emitting device according to an embodiment.

As shown in FIG. 1, the light emitting device according to the embodiment may include a light emitting structure 10, a first reflective electrode 17, and a second reflective electrode 30.

The light emitting structure 10 may include a first conductivity type semiconductor layer 11, an active layer 12, and a second conductivity type semiconductor layer 13. The active layer 12 may be disposed between the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13. The active layer 12 may be disposed under the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be disposed under the active layer 12.

For example, the first conductivity type semiconductor layer 11 is formed of an n-type semiconductor layer doped with an n-type dopant as a first conductivity type dopant, and the second conductivity type semiconductor layer 13 is formed of a second conductivity type dopant Type semiconductor layer to which a p-type dopant is added. The first conductivity type semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second conductivity type semiconductor layer 13 may be formed of an n-type semiconductor layer.

The first conductive semiconductor layer 11 may include, for example, an n-type semiconductor layer. The first conductive semiconductor layer 11 may be formed of a compound semiconductor. The first conductive semiconductor layer 11 may be formed of, for example, a Group II-VI compound semiconductor or a Group III-V compound semiconductor.

For example, the first conductivity type semiconductor layer 11 may be a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + Material. The first conductive semiconductor layer 11 may be selected from among GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, An n-type dopant such as Se or Te can be doped.

The active layer 12 is formed in such a manner that electrons (or holes) injected through the first conductive type semiconductor layer 11 and holes (or electrons) injected through the second conductive type semiconductor layer 13 meet with each other, And is a layer that emits light due to a band gap difference of an energy band according to a material of the active layer 12. [ The active layer 12 may be formed of any one of a single well structure, a multi-well structure, a quantum dot structure and a quantum wire structure, but is not limited thereto.

The active layer 12 may be formed of a compound semiconductor. The active layer 12 may be implemented by way of example to the Group II -VI group or a group III -V compound semiconductor. The active layer 12 is an example of a _{In x Al y Ga 1 -x- y} N (0≤x 1, 0? Y? 1, 0? X + y? 1). When the active layer 12 is implemented in the multi-well structure, the active layer 12 may be formed by stacking a plurality of well layers and a plurality of barrier layers. For example, the InGaN well layer / GaN barrier layer . ≪ / RTI >

The second conductive semiconductor layer 13 may be formed of, for example, a p-type semiconductor layer. The second conductive semiconductor layer 13 may be formed of a compound semiconductor. The second conductivity-type semiconductor layer 13 may be implemented by, for example, a group II-VI compound semiconductor or a group III-V compound semiconductor.

For example, the second conductivity type semiconductor layer 13 may be a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + Material. The second conductive semiconductor layer 13 may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, A p-type dopant such as Sr, Ba or the like may be doped.

Meanwhile, the first conductive semiconductor layer 11 may include a p-type semiconductor layer and the second conductive semiconductor layer 13 may include an n-type semiconductor layer. Also, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed under the second conductivity type semiconductor layer 13. Accordingly, the light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures. The doping concentration of impurities in the first conductivity type semiconductor layer 11 and the second conductivity type semiconductor layer 13 may be uniform or non-uniform. That is, the structure of the light emitting structure 10 may be variously formed, but the present invention is not limited thereto.

Also, a first conductive InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductive semiconductor layer 11 and the active layer 12. In addition, a second conductive type AlGaN layer may be formed between the second conductive type semiconductor layer 13 and the active layer 12.

The first reflective electrode 17 may be disposed under the light emitting structure 10. An ohmic contact layer 15 may be further disposed between the light emitting structure 10 and the first reflective electrode 17. The ohmic contact layer 15 may be formed in ohmic contact with the light emitting structure 10. In addition, the reflective electrode 17 may function to increase the amount of light extracted to the outside by reflecting light incident from the light emitting structure 10.

The ohmic contact layer 15 may be formed of, for example, a transparent conductive oxide film. The ohmic contact layer 15 may be formed of, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide) IZO (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt (indium gallium zinc oxide), IGTO (indium gallium tin oxide), ATO , Ag, and the like.

The first reflective electrode 17 may be formed of a material having a high reflectance. For example, the first reflective electrode 17 may include silver (Ag) or aluminum (Al).

The ohmic contact layer 15 and the first reflective electrode 17 may implement Omni Directional Reflection (ODR). Accordingly, light emitted from the light emitting structure 10 in the downward direction may be reflected in the unidirectional direction from the ohmic contact layer 15 and the first reflective electrode 17 to be provided upward.

When the first reflective electrode 17 includes silver (Ag) or aluminum (Al), silver or aluminum may be diffused into the light emitting structure 10 to affect it. However, according to the embodiment, as the ohmic contact layer 15 is disposed between the first reflective electrode 17 and the light emitting structure 10, silver or aluminum included in the first reflective electrode 17. It is possible to prevent the diffusion into the light emitting structure (10).

The light emitting device according to the embodiment may include the second reflective electrode 30 disposed under the light emitting structure 10. The second reflecting electrode 30 may be disposed around the first reflecting electrode 17 and under the first reflecting electrode 17. The second reflective electrode 30 may receive light emitted from the light emitting structure 10 and reflect the light upward.

The second reflecting electrode 30 may be formed of a material having a greater brittleness than the material forming the first reflecting electrode 17. The second reflective electrode 30 may be formed of, for example, a material having a Mohs hardness of 3.5 or more. In addition, the second reflective electrode 30 may be formed of a material having a Young's modulus of 100 GPa or less. For example, the second reflective electrode 30 may include at least one of Pt, Rh, and Ir.

The first region of the second reflective electrode 30 may be disposed in contact with the second conductive semiconductor layer 13. The second reflective electrode 30 may be disposed around the ohmic contact layer 15. The second reflective electrode 30 may be disposed around the first reflective electrode 17. The first reflective electrode 17 may be electrically connected to the second conductive semiconductor layer 13. The second reflective electrode 30 may be electrically connected to the second conductive semiconductor layer 13. According to the embodiment, the second reflective electrode 30 is disposed in contact with the lower periphery of the light emitting structure 10 to implement a metal channel type light emitting device.

The light emitting device according to the embodiment may include a metal layer 50 disposed under the second reflective electrode 30. The first region of the metal layer 50 may be disposed under contact with the second reflective electrode 30, and the second region of the metal layer 50 may extend outwardly from the first region. The second region of the metal layer 50 may be exposed around the bottom of the light emitting structure 10. The second region of the metal layer 50 may be exposed around the bottom of the second reflective electrode 30. For example, the exposed width of the metal layer 50 may be 30 micrometers to 40 micrometers. The width of the metal layer 50 exposed around the bottom of the second reflective electrode 30 may be, for example, 35 micrometers.

The metal layer 50 may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. The reflectance of the second reflective electrode 30 may be greater than that of the metal layer 50. For example, according to the exemplary embodiment, the reflectance may be increased in the order of the first reflective electrode 17, the second reflective electrode 30, and the metal layer 50. As such, the light emitted from the light emitting structure 10 is reflected from the first reflecting electrode 17 and the second reflecting electrode 30 having a large reflectance, and proceeds upward, thereby further improving external light extraction efficiency. Will be.

The metal layer 50 may function as a diffusion barrier layer. A bonding layer 60 and a supporting member 70 may be disposed under the metal layer 50.

In the metal layer 50, the material included in the bonding layer 60 is diffused in the direction of the first reflective electrode 17 and the second reflective electrode 30 in the process of providing the bonding layer 60. Prevents the function. The metal layer 50 may prevent a material such as tin (Sn) included in the bonding layer 60 from affecting the first reflective electrode 17 and the second reflective electrode 30.

The bonding layer 60 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, . The support member 70 supports the light emitting structure 10 according to the embodiment and can perform a heat dissipation function. The bonding layer 60 may be implemented as a seed layer.

The supporting member 70 may be a semiconductor substrate (for example, Si, Ge, GaN, GaAs, or the like) into which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- ZnO, SiC, SiGe, and the like). The support member 70 may be embodied as an insulating material, for example.

The light emitting device according to the embodiment may include an electrode 80 electrically connected to the first conductivity type semiconductor layer 11. For example, the electrode 80 may be disposed on the first conductivity type semiconductor layer 11. The electrode 80 may be in contact with the first conductivity type semiconductor layer 11.

According to an embodiment, power may be applied to the light emitting structure 10 through the first reflective electrode 17 and the electrode 80. According to an embodiment, the electrode 80 may be implemented as an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn to realize ohmic contact. The intermediate layer may be formed of a material selected from Ni, Cu, Al, and the like. The upper layer may comprise, for example, Au. The electrode 80 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au.

Roughness may be formed on an upper surface of the light emitting structure 10. A light extraction pattern may be provided on an upper surface of the light emitting structure 10. An uneven pattern may be provided on an upper surface of the light emitting structure 10. The light extracting pattern provided in the light emitting structure 10 may be formed by a PEC (Photo Electro Chemical) etching process as an example. Accordingly, according to the embodiment, the effect of extracting external light can be increased.

In the case of the existing metal channel type light emitting device, there is a disadvantage in that the reflectance of the metal layer positioned under the light emitting structure is not good. As a result, the light emitted from the light emitting structure is absorbed and lost in the metal layer constituting the channel layer. According to the embodiment, in implementing the second reflective electrode 30 disposed around the lower portion of the light emitting structure 10, the material having the high reflectance and the metal channel may be selected, and thus, together with the first reflective electrode 17. The light emitted from the light emitting structure 10 can be effectively reflected in the upper direction. Accordingly, according to the embodiment, it is possible to obtain additional brightness improvement compared to the conventional metal channel type light emitting device.

A method of manufacturing a light emitting device according to an embodiment will now be described with reference to FIGS. 2 to 5. FIG.

2, a first conductivity type semiconductor layer 11, an active layer 12, and a second conductivity type semiconductor layer 13 are formed on a substrate 5 in accordance with an embodiment of the present invention. can do. The first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 may be defined as a light emitting structure 10.

The substrate 5 may be formed of at least one of, for example, a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. A buffer layer may be further formed between the first conductivity type semiconductor layer 11 and the substrate 5.

For example, the first conductivity type semiconductor layer 11 is formed of an n-type semiconductor layer doped with an n-type dopant as a first conductivity type dopant, and the second conductivity type semiconductor layer 13 is formed of an n- Type semiconductor layer to which a p-type dopant is added. The first conductivity type semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second conductivity type semiconductor layer 13 may be formed of an n-type semiconductor layer.

The first conductive semiconductor layer 11 may include, for example, an n-type semiconductor layer. The first conductive semiconductor layer 11 is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + . The first conductivity type semiconductor layer 11 may be selected from InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN and the like, and an n-type dopant such as Si, Ge, Sn, .

In the active layer 12, electrons (or holes) injected through the first conductive semiconductor layer 11 and holes (or electrons) injected through the second conductive semiconductor layer 13a meet each other. It is a layer that emits light due to a band gap difference of an energy band according to a material forming the active layer 12a. The active layer 12 may be formed of any one of a single well structure, a multi-well structure, a quantum dot structure and a quantum wire structure, but is not limited thereto.

The active layer 12 may be formed of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). When the active layer 12 is formed in the multi-well structure, the active layer 12 may be formed by stacking a plurality of well layers and a plurality of barrier layers, for example, at intervals of an InGaN well layer / GaN barrier layer. Can be formed.

The second conductive semiconductor layer 13 may be formed of, for example, a p-type semiconductor layer. The second conductivity type semiconductor layer 13 is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + . The second conductivity type semiconductor layer 13 may be selected from among InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN and InN. The p-type dopant such as Mg, Zn, Ca, .

Meanwhile, the first conductive semiconductor layer 11 may include a p-type semiconductor layer and the second conductive semiconductor layer 13 may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed on the second conductive type semiconductor layer 13. Thus, the light emitting structure 10 may include np, pn, npn, Or a structure thereof. The doping concentration of impurities in the first conductivity type semiconductor layer 11 and the second conductivity type semiconductor layer 13 may be uniform or non-uniform. That is, the structure of the light emitting structure 10 may be variously formed, but the present invention is not limited thereto.

Also, a first conductive InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductive semiconductor layer 11 and the active layer 12. In addition, a second conductive type AlGaN layer may be formed between the second conductive type semiconductor layer 13 and the active layer 12.

Next, as shown in FIG. 3, an ohmic contact layer 15 and a first reflective electrode 17 may be formed on the light emitting structure 10.

The ohmic contact layer 15 may be formed of, for example, a transparent conductive oxide film. The ohmic contact layer 15 may be formed of, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide) IZO (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt (indium gallium zinc oxide), IGTO (indium gallium tin oxide), ATO , Ag, and the like.

The first reflective electrode 17 may be formed of a material having a high reflectance. For example, the first reflective electrode 17 may include silver (Ag) or aluminum (Al).

When the first reflective electrode 17 includes silver (Ag) or aluminum (Al), silver or aluminum may be diffused into the light emitting structure 10 to affect it. However, according to the embodiment, as the ohmic contact layer 15 is disposed between the first reflective electrode 17 and the light emitting structure 10, silver or aluminum included in the first reflective electrode 17. It is possible to prevent the diffusion into the light emitting structure (10).

In addition, as illustrated in FIG. 3, a second reflective electrode 30 may be formed on the first reflective electrode 17. The second reflecting electrode 30 may be disposed around the first reflecting electrode 17 and on the first reflecting electrode 17.

The second reflecting electrode 30 may be formed of a material having a greater brittleness than the material forming the first reflecting electrode 17. The second reflective electrode 30 may be formed of, for example, a material having a Mohs hardness of 3.5 or more. In addition, the second reflective electrode 30 may be formed of a material having a Young's modulus of 100 GPa or less. For example, the second reflective electrode 30 may include at least one of Pt, Rh, and Ir.

As shown in FIG. 4, the metal layer 50, the bonding layer 60, and the support member 70 may be formed on the second reflective electrode 30.

The metal layer 50 may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. In the metal layer 50, the material included in the bonding layer 60 is diffused in the direction of the first reflective electrode 17 and the second reflective electrode 30 in the process of providing the bonding layer 60. Prevents the function. The metal layer 50 may prevent a material such as tin (Sn) included in the bonding layer 60 from affecting the first reflective electrode 17 and the second reflective electrode 20.

The bonding layer 60 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, . The support member 70 supports the light emitting structure 10 according to the embodiment and can perform a heat dissipation function. The bonding layer 60 may be implemented as a seed layer.

The supporting member 70 may be a semiconductor substrate (for example, Si, Ge, GaN, GaAs, or the like) into which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- ZnO, SiC, SiGe, and the like). In addition, the support member 70 may be implemented with an insulating material.

Next, the substrate 5 is removed from the first conductivity type semiconductor layer 11. As one example, the substrate 5 may be removed by a laser lift off (LLO) process. The laser lift-off process LLO is a process of irradiating a lower surface of the substrate 5 to peel the substrate 5 and the first conductive semiconductor layer 11 from each other.

As shown in FIG. 5, the side surface of the light emitting structure 10 may be etched by isolating etching, and a portion of the metal layer 50 may be exposed. The isolation etching can be performed by, for example, dry etching such as ICP (Inductively Coupled Plasma), but is not limited thereto.

The side surface of the second reflective electrode 30 may be exposed by the isolation etching.

Roughness may be formed on an upper surface of the light emitting structure 10. A light extraction pattern may be provided on an upper surface of the light emitting structure 10. An uneven pattern may be provided on an upper surface of the light emitting structure 10. The light extracting pattern provided in the light emitting structure 10 may be formed by a PEC (Photo Electro Chemical) etching process as an example. Accordingly, according to the embodiment, the effect of extracting external light can be increased.

Next, as shown in FIG. 5, an electrode 80 may be formed on the light emitting structure 10. The electrode 80 may be electrically connected to the first conductivity type semiconductor layer 11. A portion of the electrode 80 may be in contact with the first conductivity type semiconductor layer 11. According to an embodiment, power may be applied to the light emitting structure 10 through the first reflective electrode 17 and the electrode 80.

The electrode 80 may be implemented as an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn to realize ohmic contact. The intermediate layer may be formed of a material selected from Ni, Cu, Al, and the like. The upper layer may comprise, for example, Au. The electrode 80 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au.

On the other hand, the forming process of each layer described above is one example, and the process sequence can be variously modified.

The ohmic contact layer 15 and the first reflective electrode 17 may implement Omni Directional Reflection (ODR). Accordingly, light emitted from the light emitting structure 10 in the downward direction may be reflected in the unidirectional direction from the ohmic contact layer 15 and the first reflective electrode 17 to be provided upward.

The second reflective electrode 30 may receive light emitted from the light emitting structure 10 and reflect the light upward.

The first region of the second reflective electrode 30 may be disposed in contact with the second conductive semiconductor layer 13. The second reflective electrode 30 may be disposed around the ohmic contact layer 15. The second reflective electrode 30 may be disposed around the first reflective electrode 17. The first reflective electrode 17 may be electrically connected to the second conductive semiconductor layer 13. The second reflective electrode 30 may be electrically connected to the second conductive semiconductor layer 13. According to the embodiment, the second reflective electrode 30 is disposed in contact with the lower periphery of the light emitting structure 10 to implement a metal channel type light emitting device.

The first region of the metal layer 50 may be disposed under contact with the second reflective electrode 30, and the second region of the metal layer 50 may extend outwardly from the first region. The second region of the metal layer 50 may be exposed around the bottom of the light emitting structure 10. The second region of the metal layer 50 may be exposed around the bottom of the second reflective electrode 30. For example, the exposed width of the metal layer 50 may be 30 micrometers to 40 micrometers. The width of the metal layer 50 exposed around the bottom of the second reflective electrode 30 may be, for example, 35 micrometers.

The reflectance of the second reflective electrode 30 may be greater than that of the metal layer 50. For example, according to the exemplary embodiment, the reflectance may be increased in the order of the first reflective electrode 17, the second reflective electrode 30, and the metal layer 50. As such, the light emitted from the light emitting structure 10 is reflected from the first reflecting electrode 17 and the second reflecting electrode 30 having a large reflectance, and proceeds upward, thereby further improving external light extraction efficiency. Will be.

In the case of the existing metal channel type light emitting device, there is a disadvantage in that the reflectance of the metal layer positioned under the light emitting structure is not good. As a result, the light emitted from the light emitting structure is absorbed and lost in the metal layer constituting the channel layer. According to the embodiment, in implementing the second reflective electrode 30 disposed around the lower portion of the light emitting structure 10, the material having the high reflectance and the metal channel may be selected, and thus, together with the first reflective electrode 17. The light emitted from the light emitting structure 10 can be effectively reflected in the upper direction. Accordingly, according to the embodiment, it is possible to obtain additional brightness improvement compared to the conventional metal channel type light emitting device.

6 is a view showing another example of the light emitting device according to the embodiment. In the following description of the light emitting device shown in FIG. 6, the description of the elements overlapping with those described with reference to FIG. 1 will be omitted.

As shown in FIG. 6, the light emitting device according to the embodiment may further include a current blocking layer (CBL) 40. A current blocking layer 40 may be disposed between the light emitting structure 10 and the ohmic contact layer 15. The current blocking layer 40 can improve the luminous efficiency of the light emitting device according to the embodiment by alleviating the phenomenon that the current is concentrated in a portion of the active layer 12.

The current blocking layer 40 may have electrical insulation or may be formed using a material for forming a schottky contact with the light emitting structure 10. The current blocking layer 40 may be formed of an oxide, nitride, or metal. The current blocking layer 40 may include, for example, at least one of SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O _{3 ,} TiO _x , Ti, Al, Cr. .

The first reflective electrode 17 may be disposed under the light emitting structure 10. An ohmic contact layer 15 may be further disposed between the light emitting structure 10 and the first reflective electrode 17. The ohmic contact layer 15 may be formed in ohmic contact with the light emitting structure 10. In addition, the reflective electrode 17 may function to increase the amount of light extracted to the outside by reflecting light incident from the light emitting structure 10.

The ohmic contact layer 15 may be formed of, for example, a transparent conductive oxide film. The ohmic contact layer 15 may be formed of, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide) IZO (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt (indium gallium zinc oxide), IGTO (indium gallium tin oxide), ATO , Ag, and the like.

The first reflective electrode 17 may be formed of a material having a high reflectance. For example, the first reflective electrode 17 may include silver (Ag) or aluminum (Al).

The ohmic contact layer 15 and the first reflective electrode 17 may implement Omni Directional Reflection (ODR). Accordingly, light emitted from the light emitting structure 10 in the downward direction may be reflected in the unidirectional direction from the ohmic contact layer 15 and the first reflective electrode 17 to be provided upward.

When the first reflective electrode 17 includes silver (Ag) or aluminum (Al), silver or aluminum may be diffused into the light emitting structure 10 to affect it. However, according to the embodiment, as the ohmic contact layer 15 is disposed between the first reflective electrode 17 and the light emitting structure 10, silver or aluminum included in the first reflective electrode 17. It is possible to prevent the diffusion into the light emitting structure (10).

The light emitting device according to the embodiment may include the second reflective electrode 30 disposed under the light emitting structure 10. The second reflecting electrode 30 may be disposed around the first reflecting electrode 17 and under the first reflecting electrode 17. The second reflective electrode 30 may receive light emitted from the light emitting structure 10 and reflect the light upward.

The second reflecting electrode 30 may be formed of a material having a greater brittleness than the material forming the first reflecting electrode 17. The second reflective electrode 30 may be formed of, for example, a material having a Mohs hardness of 3.5 or more. In addition, the second reflective electrode 30 may be formed of a material having a Young's modulus of 100 GPa or less. For example, the second reflective electrode 30 may include at least one of Pt, Rh, and Ir.

The first region of the second reflective electrode 30 may be disposed in contact with the second conductive semiconductor layer 13. The second reflective electrode 30 may be disposed around the ohmic contact layer 15. The second reflective electrode 30 may be disposed around the first reflective electrode 17. The first reflective electrode 17 may be electrically connected to the second conductive semiconductor layer 13. The second reflective electrode 30 may be electrically connected to the second conductive semiconductor layer 13. According to the embodiment, the second reflective electrode 30 is disposed in contact with the lower periphery of the light emitting structure 10 to implement a metal channel type light emitting device.

The light emitting device according to the embodiment may include a metal layer 50 disposed under the second reflective electrode 30. The first region of the metal layer 50 may be disposed under contact with the second reflective electrode 30, and the second region of the metal layer 50 may extend outwardly from the first region. The second region of the metal layer 50 may be exposed around the bottom of the light emitting structure 10. The second region of the metal layer 50 may be exposed around the bottom of the second reflective electrode 30. For example, the exposed width of the metal layer 50 may be 30 micrometers to 40 micrometers. The width of the metal layer 50 exposed around the bottom of the second reflective electrode 30 may be, for example, 35 micrometers.

The metal layer 50 may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. The reflectance of the second reflective electrode 30 may be greater than that of the metal layer 50. For example, according to the exemplary embodiment, the reflectance may be increased in the order of the first reflective electrode 17, the second reflective electrode 30, and the metal layer 50. As such, the light emitted from the light emitting structure 10 is reflected from the first reflecting electrode 17 and the second reflecting electrode 30 having a large reflectance, and proceeds upward, thereby further improving external light extraction efficiency. Will be.

The light emitting device according to the embodiment may include an electrode 80 electrically connected to the first conductivity type semiconductor layer 11. For example, the electrode 80 may be disposed on the first conductivity type semiconductor layer 11. The electrode 80 may be in contact with the first conductivity type semiconductor layer 11.

According to an embodiment, power may be applied to the light emitting structure 10 through the first reflective electrode 17 and the electrode 80. According to an embodiment, the electrode 80 may be implemented as an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may include a material selected from the group consisting of Cr, V, W, Ti, and Zn to realize ohmic contact. The intermediate layer may be formed of a material selected from Ni, Cu, Al, and the like. The upper layer may comprise, for example, Au. The electrode 80 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au.

Roughness may be formed on an upper surface of the light emitting structure 10. A light extraction pattern may be provided on an upper surface of the light emitting structure 10. An uneven pattern may be provided on an upper surface of the light emitting structure 10. The light extracting pattern provided in the light emitting structure 10 may be formed by a PEC (Photo Electro Chemical) etching process as an example. Accordingly, according to the embodiment, the effect of extracting external light can be increased.

In the case of the existing metal channel type light emitting device, there is a disadvantage in that the reflectance of the metal layer positioned under the light emitting structure is not good. As a result, the light emitted from the light emitting structure is absorbed and lost in the metal layer constituting the channel layer. According to the embodiment, in implementing the second reflective electrode 30 disposed around the lower portion of the light emitting structure 10, the material having the high reflectance and the metal channel may be selected, and thus, together with the first reflective electrode 17. The light emitted from the light emitting structure 10 can be effectively reflected in the upper direction. Accordingly, according to the embodiment, it is possible to obtain additional brightness improvement compared to the conventional metal channel type light emitting device.

7 is a view illustrating a light emitting device package to which the light emitting device according to the embodiment is applied.

7, a light emitting device package according to an embodiment includes a body 120, first and second lead electrodes 131 and 132 disposed on the body 120, And a molding member 140 surrounding the light emitting device 100. The first and second lead electrodes 131 and 132 are electrically connected to the first and second lead electrodes 131 and 132, .

The body 120 may be formed of a silicon material, a synthetic resin material, or a metal material, and the inclined surface may be formed around the light emitting device 100.

The first lead electrode 131 and the second lead electrode 132 are electrically separated from each other to provide power to the light emitting device 100. The first lead electrode 131 and the second lead electrode 132 may increase the light efficiency by reflecting the light generated from the light emitting device 100 and the heat generated from the light emitting device 100 To the outside.

The light emitting device 100 may be disposed on the body 120 or may be disposed on the first lead electrode 131 or the second lead electrode 132.

The light emitting device 100 may be electrically connected to the first lead electrode 131 and the second lead electrode 132 by a wire, flip chip or die bonding method.

The molding member 140 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 140 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages according to the embodiments may be arrayed on a substrate, and a lens, a light guide plate, a prism sheet, a diffusion sheet, etc., which are optical members, may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. The light unit may be implemented as a top view or a side view type and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Still another embodiment may be embodied as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a streetlight, an electric signboard, and a headlight.

The light emitting device according to the embodiment can be applied to a light unit. The light unit may include a structure in which a plurality of light emitting elements are arranged, and may include a display device shown in FIGS. 8 and 9 and a lighting device shown in FIGS. 10 to 14.

8, a display device 1000 according to an embodiment includes a light guide plate 1041, a light emitting module 1031 for providing light to the light guide plate 1041, and a reflection member 1022 An optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 1031, and a reflection member 1022 But is not limited to, a bottom cover 1011.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.

At least one light emitting module 1031 may be provided, and light may be provided directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device or a light emitting device package 200 according to the embodiment described above. The light emitting device package 200 may be arrayed on the substrate 1033 at predetermined intervals.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern. However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 200 is provided on the side surface of the bottom cover 1011 or on the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.

The plurality of light emitting device packages 200 may be mounted such that the light emitting surface of the light emitting device package 200 is spaced apart from the light guiding plate 1041 by a predetermined distance, but the present invention is not limited thereto. The light emitting device package 200 may directly or indirectly provide light to the light-incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet condenses incident light into a display area. The brightness enhancing sheet improves the brightness by reusing the lost light. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

9 is a view showing another example of the display device according to the embodiment.

9, the display device 1100 includes a bottom cover 1152, a substrate 1020 on which the above-described light emitting device 100 is arranged, an optical member 1154, and a display panel 1155.

The substrate 1020 and the light emitting device package 200 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses incident light, and the horizontal and vertical prism sheets condense incident light into a display area. The brightness enhancing sheet enhances brightness by reusing the lost light.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, and light condensation of the light emitted from the light emitting module 1060.

10 to 12 are views showing the lighting apparatus according to the embodiment.

10 is a perspective view from above of the lighting apparatus according to the embodiment, FIG. 11 is a perspective view from below of the lighting apparatus illustrated in FIG. 10, and FIG. 12 is an exploded perspective view of the lighting apparatus illustrated in FIG. 10.

10 to 12, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat radiator 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. It may include. Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device or a light emitting device package according to the embodiment.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the light source unit 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 is reflected on the inner surface of the cover 2100 to reflect the light returned to the light source module 2200 side again toward the cover 2100. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole 2511 through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside to provide the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension part 2670 is inserted into the connection part 2750 of the inner case 2700 and receives an electrical signal from the outside. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the extension portion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800 .

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

13 and 14 are views illustrating another example of the lighting apparatus according to the embodiment.

13 is a perspective view of a lighting apparatus according to an embodiment, and FIG. 14 is an exploded perspective view of the lighting apparatus illustrated in FIG. 13.

13 and 14, the lighting apparatus according to the embodiment may include a cover 3100, a light source unit 3200, a radiator 3300, a circuit unit 3400, an inner case 3500, and a socket 3600. Can be. The light source unit 3200 may include a light emitting device or a light emitting device package according to the embodiment.

The cover 3100 has a bulb shape and is hollow. The cover 3100 has an opening 3110. The light source unit 3200 and the member 3350 can be inserted through the opening 3110. [

The cover 3100 may be coupled to the heat discharging body 3300 and surround the light source unit 3200 and the member 3350. The light source part 3200 and the member 3350 may be shielded from the outside by the combination of the cover 3100 and the heat discharging body 3300. The coupling between the cover 3100 and the heat discharging body 3300 may be combined through an adhesive, or may be combined by various methods such as a rotational coupling method and a hook coupling method. The rotation coupling method is a method in which the cover 3100 is coupled with the heat discharging body 3300 by the rotation of the cover 3100 in such a manner that the thread of the cover 3100 is engaged with the thread groove of the heat discharging body 3300 In the hook coupling method, the protrusion of the cover 3100 is inserted into the groove of the heat discharging body 3300, and the cover 3100 and the heat discharging body 3300 are coupled.

The cover 3100 is optically coupled to the light source unit 3200. Specifically, the cover 3100 may diffuse, scatter, or excite light from the light emitting device 3230 of the light source unit 3200. The cover 3100 may be a kind of optical member. Here, the cover 3100 may have a phosphor on the inside / outside or inside to excite the light from the light source unit 3200.

The inner surface of the cover 3100 may be coated with a milky white paint. Here, the milky white paint may include a diffusing agent for diffusing light. The surface roughness of the inner surface of the cover 3100 may be larger than the surface roughness of the outer surface of the cover 3100. This is for sufficiently scattering and diffusing light from the light source part 3200.

The cover 3100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 3100 may be a transparent material that can be seen from the outside of the light source unit 3200 and the member 3350, and may be an invisible and opaque material. The cover 3100 may be formed, for example, by blow molding.

The light source unit 3200 is disposed on the member 3350 of the heat sink 3300 and may be disposed in a plurality of units. Specifically, the light source portion 3200 may be disposed on at least one of the plurality of side surfaces of the member 3350. In addition, the light source 3200 may be disposed at an upper end of the side of the member 3350.

In FIG. 14, the light source unit 3200 may be disposed at three side surfaces of the six side surfaces of the member 3350. However, the present invention is not limited thereto, and the light source portion 3200 may be disposed on all the sides of the member 3350. The light source unit 3200 may include a substrate 3210 and a light emitting device 3230. The light emitting device 3230 may be disposed on one side of the substrate 3210.

The substrate 3210 has a rectangular plate shape, but is not limited thereto and may have various shapes. For example, the substrate 3210 may have a circular or polygonal plate shape. The substrate 3210 may be a printed circuit pattern on an insulator. For example, the substrate 3210 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB . ≪ / RTI > In addition, it is possible to use a Chips On Board (COB) type that can directly bond the LED chip unpacked on the printed circuit board.

In addition, the substrate 3210 may be formed of a material that efficiently reflects light, or may be formed of a color whose surface efficiently reflects light, for example, white, silver, or the like. The substrate 3210 may be electrically connected to the circuit unit 3400 housed in the heat discharging body 3300. The substrate 3210 and the circuit portion 3400 may be connected, for example, via a wire. The wire may pass through the heat discharging body 3300 to connect the substrate 3210 and the circuit unit 3400.

The light emitting device 3230 may be a light emitting diode chip that emits red, green, or blue light, or a light emitting diode chip that emits UV light. Here, the light emitting diode chip may be a lateral type or a vertical type, and the light emitting diode chip may emit blue, red, yellow, or green light. .

The light emitting device 3230 may have a phosphor. The phosphor may be at least one of a garnet system (YAG, TAG), a silicate system, a nitride system, and an oxynitride system. Alternatively, the fluorescent material may be at least one of a yellow fluorescent material, a green fluorescent material, and a red fluorescent material.

The heat discharging body 3300 may be coupled to the cover 3100 to dissipate heat from the light source unit 3200. The heat discharging body 3300 has a predetermined volume and includes an upper surface 3310 and a side surface 3330. A member 3350 may be disposed on the upper surface 3310 of the heat discharging body 3300. An upper surface 3310 of the heat discharging body 3300 can be engaged with the cover 3100. The upper surface 3310 of the heat discharging body 3300 may have a shape corresponding to the opening 3110 of the cover 3100.

A plurality of radiating fins 3370 may be disposed on the side surface 3330 of the heat discharging body 3300. The radiating fin 3370 may extend outward from the side surface 3330 of the heat discharging body 3300 or may be connected to the side surface 3330. The heat dissipation fin 3370 may increase the heat dissipation area of the heat dissipator 3300 to improve heat dissipation efficiency. Here, the side surface 3330 may not include the radiating fin 3370.

The member 3350 may be disposed on the upper surface 3310 of the heat discharging body 3300. The member 3350 may be integral with the top surface 3310 or may be coupled to the top surface 3310. The member 3350 may be a polygonal pillar. Specifically, the member 3350 may be a hexagonal column. The hexagonal column member 3350 has an upper surface, a lower surface, and six sides. Here, the member 3350 may be a circular column or an elliptic column as well as a polygonal column. When the member 3350 is a circular column or an elliptic column, the substrate 3210 of the light source portion 3200 may be a flexible substrate.

The light source unit 3200 may be disposed on six sides of the member 3350. The light source unit 3200 may be disposed on all six side surfaces, or the light source unit 3200 may be disposed on some of the six side surfaces. In FIG. 15, the light source unit 3200 is disposed on three side surfaces of the six side surfaces.

The substrate 3210 is disposed on a side surface of the member 3350. The side surface of the member 3350 may be substantially perpendicular to the upper surface 3310 of the heat discharging body 3300. Therefore, the substrate 3210 and the top surface 310 of the heat sink 3300 may be substantially perpendicular to each other.

The material of the member 3350 may be a material having thermal conductivity. This is to receive the heat generated from the light source 3200 quickly. The material of the member 3350 may be, for example, aluminum (Al), nickel (Ni), copper (Cu), magnesium (Mg), silver (Ag), tin (Sn) Or the member 3350 may be formed of a thermally conductive plastic having thermal conductivity. Thermally conductive plastics are lighter than metals and have the advantage of having unidirectional thermal conductivity.

The circuit unit 3400 receives power from the outside and converts the supplied power to the light source unit 3200. The circuit unit 3400 supplies the converted power to the light source unit 3200. The circuit unit 3400 may be disposed on the heat discharging body 3300. Specifically, the circuit unit 3400 may be housed in the inner case 3500 and stored in the heat discharging body 3300 together with the inner case 3500. The circuit unit 3400 may include a circuit board 3410 and a plurality of components 3430 mounted on the circuit board 3410.

The circuit board 3410 has a circular plate shape, but is not limited thereto and may have various shapes. For example, the circuit board 3410 may be in the shape of an oval or polygonal plate. Such a circuit board 3410 may be one in which a circuit pattern is printed on an insulator. The circuit board 3410 is electrically connected to the substrate 3210 of the light source unit 3200. The electrical connection between the circuit board 3410 and the substrate 3210 may be connected by wire, for example. The wires may be disposed inside the heat discharging body 3300 to connect the circuit board 3410 and the substrate 3210. The plurality of components 3430 include, for example, a DC converter for converting AC power supplied from an external power source to DC power, a driving chip for controlling the driving of the light source 3200, An electrostatic discharge (ESD) protection device, and the like.

The inner case 3500 houses the circuit portion 3400 therein. The inner case 3500 may have an accommodating part 510 for accommodating the circuit part 3400. The receiving portion 3510 may have a cylindrical shape as an example. The shape of the accommodating portion 3510 may vary depending on the shape of the heat discharging body 3300. The inner case 3500 may be housed in the heat discharging body 3300. The receiving portion 3510 of the inner case 3500 may be received in a receiving portion formed on the lower surface of the heat discharging body 3300.

The inner case 3500 may be coupled to the socket 3600. The inner case 3500 may have a connection portion 3530 that engages with the socket 3600. The connection portion 3530 may have a threaded structure corresponding to the thread groove structure of the socket 3600. The inner case 3500 is an insulator. Therefore, electrical short circuit between the circuit portion 3400 and the heat discharging body 3300 is prevented. For example, the inner case 3500 may be formed of plastic or resin.

The socket 600 may be coupled to the inner case 500. Specifically, the socket 3600 may be engaged with the connection portion 3530 of the inner case 3500. The socket 3600 may have a structure such as a conventional conventional incandescent bulb. The circuit portion 3400 and the socket 3600 are electrically connected. The electrical connection between the circuit part 3400 and the socket 3600 may be connected via a wire. Accordingly, when external power is applied to the socket 3600, the external power may be transmitted to the circuit unit 3400. The socket 3600 may have a screw groove structure corresponding to the screw thread structure of the connection part 3550.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

10: light emitting structure 11: first conductive semiconductor layer
12: active layer 13: second conductive semiconductor layer
15: ohmic contact layer 17: first reflective electrode
30: second reflective electrode 40: current blocking layer
50: metal layer 60: bonding layer
70: support member 80: electrode

Claims (14)

A light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer;
A first reflective electrode disposed under the light emitting structure;
A second reflective electrode disposed below the light emitting structure and disposed around the first reflective electrode and below the first reflective electrode;
. The method of claim 1,
And a ohmic contact layer disposed between the first reflective electrode and the light emitting structure. 3. The method of claim 2,
The ohmic contact layer includes a transparent conductive oxide film. The method of claim 1,
The first reflective electrode includes Ag or Al. The method of claim 1,
The light emitting device of which the material forming the second reflective electrode has a higher brittleness than the material forming the first reflective electrode. The method of claim 1,
The second reflective electrode includes at least one of Pt, Rh, Ir. The method of claim 1,
The first region of the second reflective electrode is disposed under the second conductive semiconductor layer in contact with. The method of claim 1,
Light emitting device comprising a metal layer disposed under the second reflective electrode. 9. The method of claim 8,
The first region of the metal layer is disposed under contact with the second reflective electrode, and the second region of the metal layer extends outward from the first region. 10. The method of claim 9,
The second region of the metal layer is exposed to the lower periphery of the light emitting structure. 9. The method of claim 8,
The light emitting device of which the reflectance of the second reflecting electrode is larger than that of the metal layer. 9. The method of claim 8,
A light emitting device comprising a bonding layer and a support member disposed under the metal layer. Body;
Is disposed on the body, the light emitting device according to any one of claims 1 to 12;
A first lead electrode and a second lead electrode electrically connected to the light emitting element;
Emitting device package. Board;
A light emitting device disposed on the substrate and according to any one of claims 1 to 12;
An optical member through which the light provided from the light emitting element passes;
.

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