KR102008313B1 - Light emitting device, light emitting device package, and light unit - Google Patents

Abstract

The light emitting device according to the embodiment may include a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; A first electrode disposed under the light emitting structure and electrically connected to the first conductive semiconductor layer; A second electrode disposed under the light emitting structure and electrically connected to the second conductive semiconductor layer; A first contact portion disposed through the light emitting structure, the first region being electrically connected to the first electrode, and the second region being in contact with an upper surface of the first conductivity type semiconductor layer; An insulating ion implantation layer disposed around the first contact portion and insulating the first contact portion and the second conductive semiconductor layer; It includes.

Description

Light-Emitting Device, Light-Emitting Device Package and Light Unit {LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHT UNIT}

Embodiments relate to a light emitting device, a light emitting device package, and a light unit.

Light emitting diodes (LEDs) are widely used as one of light emitting devices. Light-emitting diodes use the properties of compound semiconductors to convert electrical signals into light, such as infrared, visible and ultraviolet light.

As the light efficiency of light emitting devices increases, light emitting devices have been applied to various fields including display devices and lighting devices.

The embodiment provides a light emitting device, a light emitting device package, and a light unit capable of improving light extraction efficiency and improving manufacturing yield.

The light emitting device according to the embodiment may include a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; A first electrode disposed under the light emitting structure and electrically connected to the first conductive semiconductor layer; A second electrode disposed under the light emitting structure and electrically connected to the second conductive semiconductor layer; A first contact portion disposed through the light emitting structure, the first region being electrically connected to the first electrode, and the second region being in contact with an upper surface of the first conductivity type semiconductor layer; An insulating ion implantation layer disposed around the first contact portion and insulating the first contact portion and the second conductive semiconductor layer; It includes.

The light emitting device package according to the embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting device; The light emitting device includes: a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; A first electrode disposed under the light emitting structure and electrically connected to the first conductive semiconductor layer; A second electrode disposed under the light emitting structure and electrically connected to the second conductive semiconductor layer; A first contact portion disposed through the light emitting structure, the first region being electrically connected to the first electrode, and the second region being in contact with an upper surface of the first conductivity type semiconductor layer; An insulating ion implantation layer disposed around the first contact portion and insulating the first contact portion and the second conductive semiconductor layer; It includes.

According to an embodiment, a light unit includes a substrate; A light emitting device disposed on the substrate; An optical member through which light provided from the light emitting device passes; The light emitting device includes: a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; A first electrode disposed under the light emitting structure and electrically connected to the first conductive semiconductor layer; A second electrode disposed under the light emitting structure and electrically connected to the second conductive semiconductor layer; A first contact portion disposed through the light emitting structure, the first region being electrically connected to the first electrode, and the second region being in contact with an upper surface of the first conductivity type semiconductor layer; An insulating ion implantation layer disposed around the first contact portion and insulating the first contact portion and the second conductive semiconductor layer; It includes.

The light emitting device, the light emitting device package, and the light unit according to the embodiment have an advantage of improving light extraction efficiency and improving manufacturing yield.

1 is a view showing a light emitting device according to an embodiment.
FIG. 2 is a diagram illustrating an example of arranging a first contact portion of the light emitting device of FIG. 1.
3 to 6 are views illustrating a light emitting device manufacturing method according to an embodiment.
7 is a view showing another example of a light emitting device according to the embodiment.
8 is a view showing a light emitting device package according to the embodiment.
9 is a diagram illustrating a display device according to an exemplary embodiment.
10 is a diagram illustrating another example of a display device according to an exemplary embodiment.
11 is a view showing a lighting apparatus according to an embodiment.

In the description of an embodiment, each layer (region), region, pattern, or structure is "on" or "under" the substrate, each layer (film), region, pad, or pattern. In the case where it is described as being formed at, "up" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criteria for up / down or down / down each layer will be described based on the drawings.

In the drawings, the thickness or size of each layer may be exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device, a light emitting device package, a light unit, and a light emitting device manufacturing method according to embodiments will be described in detail with reference to the accompanying drawings.

1 is a view showing a light emitting device according to the embodiment, Figure 2 is a view showing an example of the arrangement of the first contact portion of the light emitting device shown in FIG.

1 and 2, the light emitting device according to the embodiment, the light emitting structure 10, the first semiconductor layer 30, the first electrode 81, the second electrode 82, the first contact portion (91).

The light emitting structure 10 may include a first conductive semiconductor layer 11, an active layer 12, and a second conductive semiconductor layer 13. The active layer 12 may be disposed between the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13. The active layer 12 may be disposed under the first conductive semiconductor layer 11, and the second conductive semiconductor layer 13 may be disposed under the active layer 12.

For example, the first conductivity type semiconductor layer 11 is formed of an n type semiconductor layer to which an n type dopant is added as a first conductivity type dopant, and the second conductivity type semiconductor layer 13 is a second conductivity type dopant. As a p-type dopant may be formed as a p-type semiconductor layer. In addition, the first conductive semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second conductive semiconductor layer 13 may be formed of an n-type semiconductor layer.

The first conductive semiconductor layer 11 may include, for example, an n-type semiconductor layer. The first conductivity type semiconductor layer 11 may be implemented as a compound semiconductor. The first conductivity type semiconductor layer 11 may be implemented as, for example, a group II-VI compound semiconductor or a group III-V compound semiconductor.

For example, a semiconductor having a compositional formula of the first conductive type semiconductor layer 11 is _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be implemented with materials. The first conductivity type semiconductor layer 11 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. N-type dopants such as Se and Te may be doped.

In the active layer 12, electrons (or holes) injected through the first conductivity type semiconductor layer 11 and holes (or electrons) injected through the second conductivity type semiconductor layer 13 meet each other. The layer emits light due to a band gap difference of an energy band according to a material forming the active layer 12. The active layer 12 may be formed of any one of a single well structure, a multiple well structure, a quantum dot structure, or a quantum line structure, but is not limited thereto.

The active layer 12 may be implemented with a compound semiconductor. The active layer 12 may be implemented by way of example to the Group II -VI group or a group III -V compound semiconductor. The active layer 12 is an example of a _{In x Al y Ga 1 -x- y} N (0≤x It can be implemented with a semiconductor material having a composition formula of ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1. When the active layer 12 is implemented as the multi-well structure, the active layer 12 may be implemented by stacking a plurality of well layers and a plurality of barrier layers, for example, an InGaN well layer / GaN barrier layer. Can be implemented in cycles.

The second conductive semiconductor layer 13 may be implemented with, for example, a p-type semiconductor layer. The second conductivity type semiconductor layer 13 may be implemented as a compound semiconductor. The second conductivity-type semiconductor layer 13 may be implemented by, for example, a group II-VI compound semiconductor or a group III-V compound semiconductor.

For example, a semiconductor having a composition formula of the second conductive type semiconductor layer 13 is _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be implemented with materials. The second conductive semiconductor layer 13 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like, and may include Mg, Zn, Ca, P-type dopants such as Sr and Ba may be doped.

Meanwhile, the first conductive semiconductor layer 11 may include a p-type semiconductor layer, and the second conductive semiconductor layer 13 may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed below the second conductive semiconductor layer 13. Accordingly, the light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures. In addition, the doping concentrations of the impurities in the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be uniformly or non-uniformly formed. That is, the structure of the light emitting structure 10 may be formed in various ways, but is not limited thereto.

In addition, a first conductivity type InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductivity type semiconductor layer 11 and the active layer 12. In addition, a second conductive AlGaN layer may be formed between the second conductive semiconductor layer 13 and the active layer 12.

The light emitting device according to the embodiment may include a reflective layer 17. The reflective layer 17 may be electrically connected to the second conductivity type semiconductor layer 13. The reflective layer 17 may be disposed under the light emitting structure 10. The reflective layer 17 may be disposed under the second conductive semiconductor layer 13. The reflective layer 17 may perform a function of increasing the amount of light extracted to the outside by reflecting light incident from the light emitting structure 10.

The light emitting device according to the embodiment may include an ohmic contact layer 15 disposed between the reflective layer 17 and the second conductive semiconductor layer 13. The ohmic contact layer 15 may be in contact with the second conductivity type semiconductor layer 13. The ohmic contact layer 15 may be formed to be in ohmic contact with the light emitting structure 10. The ohmic contact layer 15 may include a region in ohmic contact with the light emitting structure 10. The ohmic contact layer 15 may include a region in ohmic contact with the second conductivity-type semiconductor layer 13.

The ohmic contact layer 15 may be formed of, for example, a transparent conductive oxide film. The ohmic contact layer 15 may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), and inaz Aluminum Zinc Oxide (IGZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt It may be formed of at least one material selected from Ag, Ti.

The reflective layer 17 may be formed of a material having a high reflectance. For example, the reflective layer 17 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the reflective layer 17 may be formed of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin-oxide (IZTO), and indium-aluminum-zinc- (AZO). Transmissive conductive materials such as Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in multiple layers. For example, in the exemplary embodiment, the reflective layer 17 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

For example, the reflective layer 17 may be formed by alternately forming an Ag layer and a Ni layer, and may include a Ni / Ag / Ni, Ti layer, or Pt layer. In addition, the ohmic contact layer 15 may be formed under the reflective layer 17, and at least a part of the ohmic contact layer 15 may be in ohmic contact with the light emitting structure 10 through the reflective layer 17.

The light emitting device according to the embodiment may include a second metal layer 35 disposed below the reflective layer 17. The second metal layer 35 may include at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials.

In example embodiments, the second electrode 82 may include at least one of the reflective layer 17, the ohmic contact layer 15, and the second metal layer 35. For example, the second electrode 82 may include all of the reflective layer 17, the second metal layer 35, and the ohmic contact layer 15, and may include one selected layer or two selected layers. You may.

The second electrode 82 according to the embodiment may be disposed under the light emitting structure 10. The second electrode 82 may be electrically connected to the second conductivity type semiconductor layer 13.

The light emitting device according to the embodiment may include a channel layer 30 disposed around the lower portion of the light emitting structure 10. One end of the channel layer 30 may be disposed under the second conductivity type semiconductor layer 13. One end of the channel layer 30 may be disposed in contact with the lower surface of the second conductivity type semiconductor layer 13. One end of the channel layer 30 may be disposed between the second conductivity type semiconductor layer 13 and the reflective layer 17. One end of the channel layer 30 may be disposed between the second conductivity type semiconductor layer 13 and the ohmic contact layer 15.

The channel layer 30 may be made of an insulating material. For example, the channel layer 30 may be formed of oxide or nitride. For example, the channel layer 30 may include at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. Can be selected and formed. The channel layer 30 may also be referred to as an isolation layer. The channel layer 30 may perform a function of an etching stopper in an isolation process for the light emitting structure 10 later, and may prevent the electrical characteristics of the light emitting device from being degraded by the isolation process.

The light emitting device according to the embodiment may include the first contact portion 91. The first contact portion 91 may be disposed through the light emitting structure 10. The first contact portion 91 may pass through the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13.

For example, a plurality of first contact portions 91 may be formed in the light emitting structure 10 according to the embodiment as shown in FIG. 2. The first contact portion 91 may be disposed along the through hole 20 of the light emitting structure 10. The first region of the first contact portion 91 is electrically connected to the first electrode 81, and the second region of the first contact portion 91 is formed of the first conductivity type semiconductor layer 11. It may be in contact with the top surface. For example, a first region of the first contact portion 91 may contact the first metal layer 33. The first region of the first contact portion 91 may be in contact with the top surface of the first metal layer 33. For example, when the light emitting structure 10 is grown as a GaN based semiconductor layer, the first contact portion 91 may be in contact with an n face of the first conductivity type semiconductor layer 11.

Although only one first contact portion 91 is illustrated in the light emitting device illustrated in FIG. 1, a plurality of first contact portions 91 may be provided in the light emitting structure 10 according to the embodiment. The first contact portion 91 may be formed in each through hole 20.

The plurality of first contact portions 91 may be spaced apart from each other on an upper surface of the first conductivity type semiconductor layer 11. The plurality of first contact parts 91 may be dispersed and disposed in the light emitting structure 10 to diffuse current applied to the first conductive semiconductor layer 11. Accordingly, the first conductive semiconductor layer 11 may be prevented from deteriorating and the coupling efficiency of electrons and holes in the active layer 12 may be improved.

According to an embodiment, the first contact portion 91 may be implemented as an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may include a material selected from Cr, V, W, Ti, and Zn to implement ohmic contact. The intermediate layer may be implemented with a material selected from Ni, Cu, Al, and the like. The top layer may comprise Au, for example. The first contact portion 91 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo.

The light emitting device according to the embodiment may include an insulating ion implantation layer 31. The insulating ion implantation layer 31 may be disposed around the first contact portion 91. The insulating ion implantation layer 31 may be disposed in the light emitting structure 10. The insulating ion implantation layer 31 may be disposed between the second conductivity type semiconductor layer 13 and the first contact portion 91. The insulating ion implantation layer 31 may be in contact with a side surface of the first contact portion 91.

The insulating ion implantation layer 31 may be formed through the active layer 12 and the second conductive semiconductor layer 13. The insulating ion implantation layer 31 may insulate the first contact portion 91 from the second conductive semiconductor layer 13. The insulating ion implantation layer 31 may be disposed between the active layer 12 and the first contact portion 91. The insulating ion implantation layer 31 may insulate the first contact portion 91 from the active layer 12. An upper surface of the insulating ion implantation layer 31 may be in contact with the first conductivity type semiconductor layer 11.

The lower surface of the insulating ion implantation layer 31 and the lower surface of the first contact portion 91 may be disposed on the same plane. The lower surface of the insulating ion implantation layer 31 and the lower surface of the second conductive semiconductor layer 13 may be disposed on the same plane. The lower surface of the first contact portion 91 and the second conductive portion may be disposed on the same plane. The lower surface of the type semiconductor layer 13 may be disposed on the same plane. The lower surface of the insulating ion implantation layer 31 and the upper surface of the channel layer 30 may be disposed on the same plane.

The insulating ion implantation layer 31 may be formed by implanting insulating ions into the light emitting structure 10 by an ion implantation process. The insulating ion implantation layer 31 may be formed by implanting in a portion of the second conductivity type semiconductor layer 13. The insulating ion implantation layer 31 may be formed by implanting in a portion of the active layer 12. The insulating ion implantation layer 31 may be formed by implanting in a portion of the first conductivity type semiconductor layer 11. For example, the insulating ion implantation layer 31 may be formed by implanting at least one of N ions, O ions, and Ar ions.

The second conductive semiconductor layer 13 may be disposed around the insulating ion implantation layer 31. The second conductivity type semiconductor layer 13 may be disposed around the side surface of the insulating ion implantation layer 31. The second conductivity type semiconductor layer 13 may be in contact with the side surface of the insulating ion implantation layer 31. The active layer 12 may be disposed around the insulating ion implantation layer 31. The active layer 12 may be disposed around the side surface of the insulating ion implantation layer 31. The active layer 12 may be in contact with the side surface of the insulating ion implantation layer 31.

The insulating ion implantation layer 31 may be formed in a portion of the semiconductor layer constituting the light emitting structure 10 through an implantation process or the like. Accordingly, a separate patterning process may not be performed to form the insulating layer disposed around the first contact portion 91.

In addition, in forming the first contact portion 91 in the light emitting structure 10, the through hole 20 may be formed so as to correspond to a space in which the first contact portion 91 may be provided. The width of the through hole 20 can be minimized. Accordingly, the width of the through hole 20 may be formed in the size of 3 micrometers to 5 micrometers. The width of the first contact portion 91 formed in the through hole 20 may be 3 micrometers to 5 micrometers. That is, the width of the first contact portion 91 disposed in the light emitting structure 10 may be 3 micrometers to 5 micrometers. As described above, since the width of the first contact portion 91 may be reduced, the active layer 12 may be further secured, thereby increasing the light emission region.

In some embodiments, a portion of the first contact portion 91 may be formed as a conductive ion implantation layer. For example, a region of the first contact portion 91 disposed in the light emitting structure 10 may be formed as a conductive ion implantation layer. In this case, the conductive ion implantation layer may be formed by implanting conductive ions into the light emitting structure 10 through an implantation process. For example, the conductive ion implantation layer may be formed by implanting at least one of Ti ions, Al ions, and Au ions.

The light emitting device according to the embodiment may include a first metal layer 33 disposed under the insulating ion implantation layer 31. The first metal layer 33 may include at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials.

An upper surface of the first metal layer 33 may contact the lower surface of the insulating ion implantation layer 31. The first metal layer 33 may be disposed under the first contact portion 91. The first metal layer 33 may be electrically connected to the first contact portion 91. An upper surface of the first metal layer 33 may contact the lower surface of the first contact portion 91. An upper surface of the first metal layer 33 and a lower surface of the first contact portion 91 may be disposed on the same plane.

An insulating layer 40 may be disposed between the first metal layer 33 and the second metal layer 35. The insulating layer 40 may be formed of oxide or nitride. For example, the insulating layer 40 may be at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. Can be selected and formed. The insulating layer 40 may be disposed under the second metal layer 35. The insulating layer 40 may be disposed under the insulating ion implantation layer 31. An upper surface of the insulating layer 40 may contact the lower surface of the insulating ion implantation layer 31. The insulating layer 40 may be disposed under the second electrode 82. The insulating layer 40 may be disposed under the channel layer 30.

The third metal layer 50 may be disposed under the first metal layer 33. The third metal layer 50 may be electrically connected to the first contact portion 91. An upper surface of the third metal layer 50 may contact the lower surface of the first metal layer 33. The third metal layer 50 may be disposed under the insulating layer 40.

The third metal layer 50 may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. The third metal layer 50 may also function as a diffusion barrier layer. The bonding layer 60 and the conductive support member 70 may be disposed below the third metal layer 50.

The third metal layer 50 may function to prevent the material included in the bonding layer 60 from diffusing in the direction of the reflective layer 17 in a process in which the bonding layer 60 is provided. The third metal layer 50 may prevent a material such as tin (Sn) included in the bonding layer 60 from affecting the reflective layer 17.

The bonding layer 60 includes a barrier metal or a bonding metal, and for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta. It may include. The conductive support member 70 may support the light emitting structure 10 according to the embodiment and perform a heat radiation function. The bonding layer 60 may be implemented as a seed layer.

The conductive support member 70 may be, for example, a semiconductor substrate in which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W or impurities are implanted (eg, Si, Ge, GaN, GaAs). , ZnO, SiC, SiGe, etc.).

According to an embodiment, the first electrode 81 may include at least one of the first metal layer 33, the third metal layer 50, the bonding layer 60, and the conductive support member 70. have. The first electrode 81 may include all of the first metal layer 33, the third metal layer 50, the bonding layer 60, and the conductive support member 70. In addition, the first electrode 81 may optionally include one or two of the first metal layer 33, the third metal layer 50, the bonding layer 60, and the conductive support member 70. You may.

The first electrode 81 may be disposed under the light emitting structure 10. The first electrode 81 may be electrically connected to the first conductivity type semiconductor layer 11. The lower surface of the first electrode 81 may be lower than the lower surface of the second electrode 82. The upper surface of the first electrode 81 may be disposed on the same plane as the upper surface of the second electrode 82. The insulating layer 40 may be disposed between the first electrode 81 and the second electrode 82.

In addition, the light emitting device according to the embodiment may include a second contact portion 92. The second contact portion 92 may be spaced apart from the light emitting structure 10. The second contact portion 92 may be electrically connected to the second electrode 82. The second contact portion 92 may be electrically connected to the second electrode 82 through the channel layer 30. The second contact portion 92 may be electrically connected to the second metal layer 35. The second contact portion 92 may contact the upper surface of the second metal layer 35. The second contact portion 92 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo. The second contact portion 92 may be formed of the same material as the first contact portion 91. In addition, the first contact portion 91 and the second contact portion 92 may be formed of different materials.

Roughness may be formed on an upper surface of the first conductive semiconductor layer 11. Accordingly, it is possible to increase the amount of light extracted in the upper direction in the region where the roughness is formed.

The light emitting device according to the embodiment may include the insulating layer 40 disposed between the second metal layer 35 and the third metal layer 50. The insulating layer 40 may insulate the second metal layer 35 from the third metal layer 50. The insulating layer 40 may insulate the second metal layer 35 from the conductive support member 70. The insulating layer 40 may be formed of, for example, oxide or nitride. For example, the insulating layer 40 may be at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. Can be selected and formed. The insulating layer 40 may be disposed between the first electrode 81 and the second electrode 82. The insulating layer 40 may electrically insulate the first electrode 81 from the second electrode 82.

According to an embodiment, power may be applied to the light emitting structure 10 through the first electrode 81 and the second electrode 82. For example, in the light emitting device according to the embodiment, power may be applied to the light emitting structure 10 by applying power to the conductive support member 70 and the second contact portion 92 of the first electrode 81. Will be.

Accordingly, power may be provided to the first conductive semiconductor layer 11 through a method of attaching the conductive support member 70 to a bonding pad. According to an embodiment, the second contact portion 92 may be electrically connected to the second electrode 82. Accordingly, power may be provided to the second conductive semiconductor layer 13 by connecting the second contact portion 92 to a power pad through wire bonding or the like.

As described above, according to the light emitting device, power may be provided to the light emitting structure 10 through the conductive support member 70 and the second contact portion 92. Accordingly, according to the embodiment, it is possible to prevent current concentration and improve electrical reliability.

The light emitting device according to the embodiment forms the through hole 20 from the upper surface direction of the light emitting structure 10. In addition, since the insulating ion implantation layer 31 disposed around the first contact portion 91 may be formed by an implantation process, the width of the through hole 20 and the first contact portion 91 are formed. ) Width can be reduced. This can simplify the manufacturing process and improve the manufacturing yield. In addition, the light emitting device according to the embodiment may reduce the electrode area disposed on the upper surface of the light emitting structure 10, and a protective layer may not be disposed on the upper surface or the side surface of the light emitting structure 10. Accordingly, the light extraction efficiency extracted from the light emitting structure 10 to the outside can be improved.

Next, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 3 to 6.

According to the method of manufacturing the light emitting device according to the embodiment, as shown in FIG. 3, the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 are formed on the substrate 5. can do. The first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 may be defined as a light emitting structure 10.

The substrate 5 may be formed of, for example, at least one of sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, but is not limited thereto. A buffer layer may be further formed between the first conductivity type semiconductor layer 11 and the substrate 5.

For example, the first conductivity type semiconductor layer 11 is formed of an n type semiconductor layer to which an n type dopant is added as a first conductivity type dopant, and the second conductivity type semiconductor layer 13 is a second conductivity type dopant. As a p-type dopant may be formed as a p-type semiconductor layer. In addition, the first conductive semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second conductive semiconductor layer 13 may be formed of an n-type semiconductor layer.

The first conductive semiconductor layer 11 may include, for example, an n-type semiconductor layer. The first conductive semiconductor layer 11 is a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be formed. The first conductive semiconductor layer 11 may be selected from, for example, InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN, and the like, and doped with n-type dopants such as Si, Ge, Sn, Se, Te, or the like. Can be.

In the active layer 12, electrons (or holes) injected through the first conductive semiconductor layer 11 and holes (or electrons) injected through the second conductive semiconductor layer 13a meet each other. It is a layer that emits light due to a band gap difference of an energy band according to a material forming the active layer 12a. The active layer 12 may be formed of any one of a single well structure, a multiple well structure, a quantum dot structure, or a quantum line structure, but is not limited thereto.

The active layer 12 may be formed of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). When the active layer 12 is formed in the multi-well structure, the active layer 12 may be formed by stacking a plurality of well layers and a plurality of barrier layers, for example, at intervals of an InGaN well layer / GaN barrier layer. Can be formed.

The second conductive semiconductor layer 13 may be implemented with, for example, a p-type semiconductor layer. The second conductive type semiconductor layer 13 of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be formed. The second conductive semiconductor layer 13 may be selected from, for example, InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, InN, and the like, and dopants such as Mg, Zn, Ca, Sr, and Ba may be doped. Can be.

Meanwhile, the first conductive semiconductor layer 11 may include a p-type semiconductor layer, and the second conductive semiconductor layer 13 may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed on the second conductivity-type semiconductor layer 13. Accordingly, the light emitting structure 10 may be np, pn, npn, or pnp junctions. It may have at least one of the structures. In addition, the doping concentrations of the impurities in the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be uniformly or non-uniformly formed. That is, the structure of the light emitting structure 10 may be formed in various ways, but is not limited thereto.

In addition, a first conductivity type InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductivity type semiconductor layer 11 and the active layer 12. In addition, a second conductive AlGaN layer may be formed between the second conductive semiconductor layer 13 and the active layer 12.

Next, as shown in FIG. 3, an insulating ion implantation layer 31 may be formed in the light emitting structure 10. The insulating ion implantation layer 31 may be formed in a portion of the light emitting structure 10. The insulating ion implantation layer 31 may be formed in a portion of the first conductivity type semiconductor layer 11, a portion of the active layer 12, and a portion of the second conductivity type semiconductor layer 13. .

The insulating ion implantation layer 31 may be formed by implanting insulating ions into the light emitting structure 10 by an ion implantation process. The insulating ion implantation layer 31 may be formed by implanting in a portion of the second conductivity type semiconductor layer 13. The insulating ion implantation layer 31 may be formed by implanting in a portion of the active layer 12. The insulating ion implantation layer 31 may be formed by implanting in a portion of the first conductivity type semiconductor layer 11. For example, the insulating ion implantation layer 31 may be formed by implanting at least one of N ions, O ions, and Ar ions.

Subsequently, as shown in FIG. 4, an ohmic contact layer 15 and a reflective layer 17 may be formed on the light emitting structure 10.

The ohmic contact layer 15 may be disposed between the reflective layer 17 and the second conductive semiconductor layer 13. The ohmic contact layer 15 may be in contact with the second conductivity type semiconductor layer 13.

The ohmic contact layer 15 may be formed to be in ohmic contact with the light emitting structure 10. The reflective layer 17 may be electrically connected to the second conductivity type semiconductor layer 13. The ohmic contact layer 15 may include a region in ohmic contact with the light emitting structure 10.

The ohmic contact layer 15 may be formed of, for example, a transparent conductive oxide film. The ohmic contact layer 15 may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), and inaz Aluminum Zinc Oxide (IGZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt It may be formed of at least one material selected from Ag, Ti.

The reflective layer 17 may be formed of a material having a high reflectance. For example, the reflective layer 17 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the reflective layer 17 may be formed of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin-oxide (IZTO), and indium-aluminum-zinc- (AZO). Transmissive conductive materials such as Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in multiple layers. For example, in the exemplary embodiment, the reflective layer 17 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

For example, the reflective layer 17 may be formed by alternately forming an Ag layer and a Ni layer, and may include a Ni / Ag / Ni, Ti layer, or Pt layer. In addition, the ohmic contact layer 15 may be formed on the reflective layer 17, and at least a part of the ohmic contact layer 15 may be in ohmic contact with the light emitting structure 10 through the reflective layer 17.

Subsequently, as shown in FIG. 5, the first metal layer 33, the second metal layer 35, the insulating layer 40, the third metal layer 50, the bonding layer 60, on the light emitting structure 10. The conductive support member 70 may be formed.

The first metal layer 33 may include at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. The second metal layer 35 may include at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. The first metal layer 33 and the second metal layer 35 may be formed of the same material. In addition, the first metal layer 33 and the second metal layer 35 may be formed of different materials.

In example embodiments, the second electrode 82 may include at least one of the reflective layer 17, the ohmic contact layer 15, and the second metal layer 35. For example, the second electrode 82 may include all of the reflective layer 17, the second metal layer 35, and the ohmic contact layer 15, and may include one selected layer or two selected layers. You may.

An insulating layer 40 may be formed on the second metal layer 35. The insulating layer 40 may be formed of oxide or nitride. For example, the insulating layer 40 may be at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. Can be selected and formed.

The third metal layer 50 may be formed on the insulating layer 40. The third metal layer 50 may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. The third metal layer 50 may also function as a diffusion barrier layer. The bonding layer 60 and the conductive support member 70 may be formed on the third metal layer 50.

The third metal layer 50 may function to prevent the material included in the bonding layer 60 from diffusing in the direction of the reflective layer 17 in a process in which the bonding layer 60 is provided. The third metal layer 50 may prevent a material such as tin (Sn) included in the bonding layer 60 from affecting the reflective layer 17.

The bonding layer 60 includes a barrier metal or a bonding metal, and for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta. It may include. The conductive support member 70 may support the light emitting structure 10 according to the embodiment and perform a heat radiation function. The bonding layer 60 may be implemented as a seed layer.

The conductive support member 70 may be, for example, a semiconductor substrate in which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W or impurities are implanted (eg, Si, Ge, GaN, GaAs). , ZnO, SiC, SiGe, etc.).

According to an embodiment, the first electrode 81 may include at least one of the first metal layer 33, the third metal layer 50, the bonding layer 60, and the conductive support member 70. . The first electrode 81 may include all of the first metal layer 33, the third metal layer 50, the bonding layer 60, and the conductive support member 70. In addition, the first electrode 81 may optionally include one or two of the first metal layer 33, the third metal layer 50, the bonding layer 60, and the conductive support member 70. You may.

Next, the substrate 5 is removed from the first conductivity type semiconductor layer 11. As one example, the substrate 5 may be removed by a laser lift off (LLO) process. The laser lift-off process LLO is a process of irradiating a lower surface of the substrate 5 to peel the substrate 5 and the first conductive semiconductor layer 11 from each other.

As shown in FIG. 6, the side surface of the light emitting structure 10 may be etched by performing isolation etching, and a portion of the channel layer 30 may be exposed. The isolation etching may be performed by dry etching such as, for example, an inductively coupled plasma (ICP), but is not limited thereto.

Roughness may be formed on an upper surface of the light emitting structure 10. A light extraction pattern may be provided on an upper surface of the light emitting structure 10. An uneven pattern may be provided on an upper surface of the light emitting structure 10. The light extraction pattern provided on the light emitting structure 10 may be formed by, for example, a PEC (Photo Electro Chemical) etching process. Accordingly, according to the embodiment, it is possible to increase the external light extraction effect.

Next, as shown in FIG. 6, the first contact portion 91 and the second contact portion 92 may be formed.

The through hole 20 may be formed in the light emitting structure 10. The first contact portion 91 may be formed in the through hole 20. The first contact portion 91 may be disposed through the light emitting structure 10. The first contact portion 91 may pass through the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13.

For example, a plurality of first contact portions 91 may be formed in the light emitting structure 10 according to the embodiment as shown in FIG. 2. The first contact portion 91 may be disposed along the through hole 20 of the light emitting structure 10. The first region of the first contact portion 91 is electrically connected to the first electrode 81, and the second region of the first contact portion 91 is formed of the first conductivity type semiconductor layer 11. It may be in contact with the top surface. For example, a first region of the first contact portion 91 may be in contact with the first metal layer 33. The first region of the first contact portion 91 may be in contact with the top surface of the first metal layer 33.

For example, a plurality of first contact portions 91 may be formed in the light emitting structure 10 according to the embodiment as shown in FIG. 2. The first contact portion 91 may be disposed along the through hole 20 of the light emitting structure 10. The first region of the first contact portion 91 is electrically connected to the first electrode 81, and the second region of the first contact portion 91 is formed of the first conductivity type semiconductor layer 11. It may be in contact with the top surface. For example, a first region of the first contact portion 91 may contact the first metal layer 33. The first region of the first contact portion 91 may be in contact with the top surface of the first metal layer 33. For example, when the light emitting structure 10 is grown as a GaN based semiconductor layer, the first contact portion 91 may be in contact with an n face of the first conductivity type semiconductor layer 11.

Although only one first contact portion 91 is shown in the light emitting device illustrated in FIG. 6, a plurality of first contact portions 91 may be formed in the light emitting structure 10 according to the embodiment. The first contact portion 91 may be formed in each through hole 20.

The plurality of first contact portions 91 may be spaced apart from each other on an upper surface of the first conductivity type semiconductor layer 11. The plurality of first contact parts 91 may be dispersed and disposed in the light emitting structure 10 to diffuse current applied to the first conductive semiconductor layer 11. Accordingly, the first conductive semiconductor layer 11 may be prevented from deteriorating and the coupling efficiency of electrons and holes in the active layer 12 may be improved.

According to an embodiment, the first contact portion 91 may be implemented as an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may include a material selected from Cr, V, W, Ti, and Zn to implement ohmic contact. The intermediate layer may be implemented with a material selected from Ni, Cu, Al, and the like. The top layer may comprise Au, for example. The first contact portion 91 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo.

The insulating ion implantation layer 31 may be disposed around the first contact portion 91. The insulating ion implantation layer 31 may be disposed in the light emitting structure 10. The insulating ion implantation layer 31 may be disposed between the second conductivity type semiconductor layer 13 and the first contact portion 91. The insulating ion implantation layer 31 may be in contact with a side surface of the first contact portion 91.

The insulating ion implantation layer 31 may be formed through the active layer 12 and the second conductive semiconductor layer 13. The insulating ion implantation layer 31 may insulate the first contact portion 91 from the second conductive semiconductor layer 13. The insulating ion implantation layer 31 may be disposed between the active layer 12 and the first contact portion 91. The insulating ion implantation layer 31 may insulate the first contact portion 91 from the active layer 12. An upper surface of the insulating ion implantation layer 31 may be in contact with the first conductivity type semiconductor layer 11.

The lower surface of the insulating ion implantation layer 31 and the lower surface of the first contact portion 91 may be disposed on the same plane. The lower surface of the insulating ion implantation layer 31 and the lower surface of the second conductive semiconductor layer 13 may be disposed on the same plane. The lower surface of the first contact portion 91 and the second conductive portion may be disposed on the same plane. The lower surface of the type semiconductor layer 13 may be disposed on the same plane. The lower surface of the insulating ion implantation layer 31 and the upper surface of the channel layer 30 may be disposed on the same plane.

The second conductive semiconductor layer 13 may be disposed around the insulating ion implantation layer 31. The second conductivity type semiconductor layer 13 may be disposed around the side surface of the insulating ion implantation layer 31. The second conductivity type semiconductor layer 13 may be in contact with the side surface of the insulating ion implantation layer 31. The active layer 12 may be disposed around the insulating ion implantation layer 31. The active layer 12 may be disposed around the side surface of the insulating ion implantation layer 31. The active layer 12 may be in contact with the side surface of the insulating ion implantation layer 31.

The insulating ion implantation layer 31 may be formed in a portion of the semiconductor layer constituting the light emitting structure 10 through an implantation process or the like. Accordingly, a separate patterning process may not be performed to form the insulating layer disposed around the first contact portion 91.

In addition, in forming the first contact portion 91 in the light emitting structure 10, the through hole 20 may be formed so as to correspond to a space in which the first contact portion 91 may be provided. The width of the through hole 20 can be minimized. Accordingly, the width of the through hole 20 may be formed in the size of 3 micrometers to 5 micrometers. The width of the first contact portion 91 formed in the through hole 20 may be 3 micrometers to 5 micrometers. That is, the width of the first contact portion 91 disposed in the light emitting structure 10 may be 3 micrometers to 5 micrometers. As described above, since the width of the first contact portion 91 may be reduced, the active layer 12 may be further secured, thereby increasing the light emission region.

In some embodiments, a portion of the first contact portion 91 may be formed as a conductive ion implantation layer. For example, a region of the first contact portion 91 disposed in the light emitting structure 10 may be formed as a conductive ion implantation layer. In this case, the conductive ion implantation layer may be formed by implanting conductive ions into the light emitting structure 10 through an implantation process. For example, the conductive ion implantation layer may be formed by implanting at least one of Ti ions, Al ions, and Au ions.

In addition, the light emitting device according to the embodiment may include the second contact portion 92. The second contact portion 92 may be spaced apart from the light emitting structure 10. The second contact portion 92 may be electrically connected to the second electrode 82. The second contact portion 92 may be electrically connected to the second electrode 82 through the channel layer 30. The second contact portion 92 may be electrically connected to the second metal layer 35. The second contact portion 92 may contact the upper surface of the second metal layer 35. The second contact portion 92 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo. The second contact portion 92 may be formed of the same material as the first contact portion 91. In addition, the first contact portion 91 and the second contact portion 92 may be formed of different materials.

Meanwhile, the manufacturing process described above is described as an example, and the manufacturing process may be variously modified according to design.

According to an embodiment, power may be applied to the light emitting structure 10 through the first electrode 81 and the second electrode 82. For example, in the light emitting device according to the embodiment, power may be applied to the light emitting structure 10 by applying power to the conductive support member 70 and the second contact portion 92 of the first electrode 81. Will be.

Accordingly, power may be provided to the first conductive semiconductor layer 11 through a method of attaching the conductive support member 70 to a bonding pad. According to an embodiment, the second contact portion 92 may be electrically connected to the second electrode 82. Accordingly, power may be provided to the second conductive semiconductor layer 13 by connecting the second contact portion 92 to a power pad through wire bonding or the like.

As described above, according to the light emitting device, power may be provided to the light emitting structure 10 through the conductive support member 70 and the second contact portion 92. Accordingly, according to the embodiment, it is possible to prevent current concentration and improve electrical reliability.

The light emitting device according to the embodiment forms the through hole 20 from the upper surface direction of the light emitting structure 10. In addition, since the insulating ion implantation layer 31 disposed around the first contact portion 91 may be formed by an implantation process, the width of the through hole 20 and the first contact portion 91 are formed. ) Width can be reduced. This can simplify the manufacturing process and improve the manufacturing yield. In addition, the light emitting device according to the embodiment may reduce the electrode area disposed on the upper surface of the light emitting structure 10, and a protective layer may not be disposed on the upper surface or the side surface of the light emitting structure 10. Accordingly, the light extraction efficiency extracted from the light emitting structure 10 to the outside can be improved.

7 is a view showing another example of a light emitting device according to the embodiment. In the description of the light emitting device illustrated in FIG. 7, a description of the matters overlapping with those described with reference to FIGS. 1 and 2 will be omitted.

According to the light emitting device according to the embodiment, the ohmic reflective layer 19 may be disposed under the light emitting structure 10. The ohmic reflective layer 19 may be implemented to perform both the reflective layer 17 and the ohmic contact layer 15. Accordingly, the ohmic reflective layer 19 may be in ohmic contact with the second conductivity-type semiconductor layer 13 and perform a function of reflecting light incident from the light emitting structure 10.

The ohmic reflective layer 19 may be formed of several layers. For example, the Ag layer and the Ni layer may be alternately formed, and may include Ni / Ag / Ni, Ti, or Pt layers.

The light emitting device according to the embodiment is connected to the first conductivity type semiconductor layer 11 disposed on the ohmic reflective layer 19 through the conductive support member 70 disposed below the ohmic reflective layer 19. Can be electrically connected.

The second electrode 82 according to the embodiment may include at least one of the ohmic reflective layer 19 and the second metal layer 35. The light emitting device according to the embodiment may include the first conductive semiconductor layer 11 disposed on the second electrode 82 through the conductive support member 70 disposed below the second electrode 82. ) May be electrically connected to each other through the first contact portion 91.

The light emitting device according to the embodiment may include a channel layer 30 disposed around the lower portion of the light emitting structure 10. One end of the channel layer 30 may be disposed under the second conductivity type semiconductor layer 13. One end of the channel layer 30 may be disposed in contact with the lower surface of the second conductivity type semiconductor layer 13. One end of the channel layer 30 may be disposed between the second conductivity type semiconductor layer 13 and the ohmic reflective layer 19.

The channel layer 30 may be made of an insulating material. For example, the channel layer 30 may be formed of oxide or nitride. For example, the channel layer 30 may include at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. Can be selected and formed. The channel layer 30 may also be referred to as an isolation layer. The channel layer 30 may perform a function of an etching stopper in an isolation process for the light emitting structure 10 later, and may prevent the electrical characteristics of the light emitting device from being degraded by the isolation process.

The light emitting device according to the embodiment may include the first contact portion 91. The first contact portion 91 may be disposed through the light emitting structure 10. The first contact portion 91 may pass through the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13.

For example, a plurality of first contact portions 91 may be formed in the light emitting structure 10 according to the embodiment as shown in FIG. 2. The first contact portion 91 may be disposed along the through hole 20 of the light emitting structure 10. The first region of the first contact portion 91 is electrically connected to the first electrode 81, and the second region of the first contact portion 91 is formed of the first conductivity type semiconductor layer 11. It may be in contact with the top surface. For example, a first region of the first contact portion 91 may contact the first metal layer 33. The first region of the first contact portion 91 may be in contact with the top surface of the first metal layer 33. For example, when the light emitting structure 10 is grown as a GaN based semiconductor layer, the first contact portion 91 may be in contact with an n face of the first conductivity type semiconductor layer 11.

Although only one first contact portion 91 is shown in the light emitting device shown in FIG. 7, a plurality of first contact portions 91 are provided in the light emitting structure 10 according to the embodiment. The first contact portion 91 may be formed in each through hole 20.

The plurality of first contact portions 91 may be spaced apart from each other on an upper surface of the first conductivity type semiconductor layer 11. The plurality of first contact parts 91 may be dispersed and disposed in the light emitting structure 10 to diffuse current applied to the first conductive semiconductor layer 11. Accordingly, the first conductive semiconductor layer 11 may be prevented from deteriorating and the coupling efficiency of electrons and holes in the active layer 12 may be improved.

According to an embodiment, the first contact portion 91 may be implemented as an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may include a material selected from Cr, V, W, Ti, and Zn to implement ohmic contact. The intermediate layer may be implemented with a material selected from Ni, Cu, Al, and the like. The top layer may comprise Au, for example. The first contact portion 91 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo.

The light emitting device according to the embodiment may include an insulating ion implantation layer 31. The insulating ion implantation layer 31 may be disposed around the first contact portion 91. The insulating ion implantation layer 31 may be disposed in the light emitting structure 10. The insulating ion implantation layer 31 may be disposed between the second conductivity type semiconductor layer 13 and the first contact portion 91. The insulating ion implantation layer 31 may be in contact with a side surface of the first contact portion 91.

The insulating ion implantation layer 31 may be formed through the active layer 12 and the second conductive semiconductor layer 13. The insulating ion implantation layer 31 may insulate the first contact portion 91 from the second conductive semiconductor layer 13. The insulating ion implantation layer 31 may be disposed between the active layer 12 and the first contact portion 91. The insulating ion implantation layer 31 may insulate the first contact portion 91 from the active layer 12. An upper surface of the insulating ion implantation layer 31 may be in contact with the first conductivity type semiconductor layer 11.

The lower surface of the insulating ion implantation layer 31 and the lower surface of the first contact portion 91 may be disposed on the same plane. The lower surface of the insulating ion implantation layer 31 and the lower surface of the second conductive semiconductor layer 13 may be disposed on the same plane. The lower surface of the first contact portion 91 and the second conductive portion may be disposed on the same plane. The lower surface of the type semiconductor layer 13 may be disposed on the same plane. The lower surface of the insulating ion implantation layer 31 and the upper surface of the channel layer 30 may be disposed on the same plane.

The insulating ion implantation layer 31 may be formed by implanting insulating ions into the light emitting structure 10 by an ion implantation process. The insulating ion implantation layer 31 may be formed by implanting in a portion of the second conductivity type semiconductor layer 13. The insulating ion implantation layer 31 may be formed by implanting in a portion of the active layer 12. The insulating ion implantation layer 31 may be formed by implanting in a portion of the first conductivity type semiconductor layer 11. For example, the insulating ion implantation layer 31 may be formed by implanting at least one of N ions, O ions, and Ar ions.

The second conductive semiconductor layer 13 may be disposed around the insulating ion implantation layer 31. The second conductivity type semiconductor layer 13 may be disposed around the side surface of the insulating ion implantation layer 31. The second conductivity type semiconductor layer 13 may be in contact with the side surface of the insulating ion implantation layer 31. The active layer 12 may be disposed around the insulating ion implantation layer 31. The active layer 12 may be disposed around the side surface of the insulating ion implantation layer 31. The active layer 12 may be in contact with the side surface of the insulating ion implantation layer 31.

The insulating ion implantation layer 31 may be formed in a portion of the semiconductor layer constituting the light emitting structure 10 through an implantation process or the like. Accordingly, a separate patterning process may not be performed to form the insulating layer disposed around the first contact portion 91.

In addition, in forming the first contact portion 91 in the light emitting structure 10, the through hole 20 may be formed so as to correspond to a space in which the first contact portion 91 may be provided. The width of the through hole 20 can be minimized. Accordingly, the width of the through hole 20 may be formed in the size of 3 micrometers to 5 micrometers. The width of the first contact portion 91 formed in the through hole 20 may be 3 micrometers to 5 micrometers. That is, the width of the first contact portion 91 disposed in the light emitting structure 10 may be 3 micrometers to 5 micrometers. As described above, since the width of the first contact portion 91 may be reduced, the active layer 12 may be further secured, thereby increasing the light emission region.

In some embodiments, a portion of the first contact portion 91 may be formed as a conductive ion implantation layer. For example, a region of the first contact portion 91 disposed in the light emitting structure 10 may be formed as a conductive ion implantation layer. In this case, the conductive ion implantation layer may be formed by implanting conductive ions into the light emitting structure 10 through an implantation process. For example, the conductive ion implantation layer may be formed by implanting at least one of Ti ions, Al ions, and Au ions.

The light emitting device according to the embodiment may include a first metal layer 33 disposed under the insulating ion implantation layer 31. The first metal layer 33 may include at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. An upper surface of the first metal layer 33 may contact the lower surface of the insulating ion implantation layer 31. The first metal layer 33 may be disposed under the first contact portion 91. The first metal layer 33 may be electrically connected to the first contact portion 91. An upper surface of the first metal layer 33 may contact the lower surface of the first contact portion 91. An upper surface of the first metal layer 33 and a lower surface of the first contact portion 91 may be disposed on the same plane.

An insulating layer 40 may be disposed between the first metal layer 33 and the second metal layer 35. The insulating layer 40 may be formed of oxide or nitride. For example, the insulating layer 40 may be at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. Can be selected and formed. The insulating layer 40 may be disposed under the second metal layer 35. The insulating layer 40 may be disposed under the insulating ion implantation layer 31. An upper surface of the insulating layer 40 may contact the lower surface of the insulating ion implantation layer 31. The insulating layer 40 may be disposed under the second electrode 82. The insulating layer 40 may be disposed under the channel layer 30.

The third metal layer 50 may be disposed under the first metal layer 33. The third metal layer 50 may be electrically connected to the first contact portion 91. An upper surface of the third metal layer 50 may contact the lower surface of the first metal layer 33. The third metal layer 50 may be disposed under the insulating layer 40.

The third metal layer 50 may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. The third metal layer 50 may also function as a diffusion barrier layer. The bonding layer 60 and the conductive support member 70 may be disposed below the third metal layer 50.

The third metal layer 50 may function to prevent the material included in the bonding layer 60 from being diffused toward the ohmic reflective layer 19 in the process of providing the bonding layer 60. The third metal layer 50 may prevent a material such as tin (Sn) included in the bonding layer 60 from affecting the ohmic reflective layer 19.

The bonding layer 60 includes a barrier metal or a bonding metal, and for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta. It may include. The conductive support member 70 may support the light emitting structure 10 according to the embodiment and perform a heat radiation function. The bonding layer 60 may be implemented as a seed layer.

The conductive support member 70 may be, for example, a semiconductor substrate in which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W or impurities are implanted (eg, Si, Ge, GaN, GaAs). , ZnO, SiC, SiGe, etc.).

According to an embodiment, the first electrode 81 may include at least one of the first metal layer 33, the third metal layer 50, the bonding layer 60, and the conductive support member 70. have. The first electrode 81 may include all of the first metal layer 33, the third metal layer 50, the bonding layer 60, and the conductive support member 70. In addition, the first electrode 81 may optionally include one or two of the first metal layer 33, the third metal layer 50, the bonding layer 60, and the conductive support member 70. You may.

The first electrode 81 may be disposed under the light emitting structure 10. The first electrode 81 may be electrically connected to the first conductivity type semiconductor layer 11. The lower surface of the first electrode 81 may be lower than the lower surface of the second electrode 82. The upper surface of the first electrode 81 may be disposed on the same plane as the upper surface of the second electrode 82. The insulating layer 40 may be disposed between the first electrode 81 and the second electrode 82.

In addition, the light emitting device according to the embodiment may include a second contact portion 92. The second contact portion 92 may be spaced apart from the light emitting structure 10. The second contact portion 92 may be electrically connected to the second electrode 82. The second contact portion 92 may be electrically connected to the second electrode 82 through the channel layer 30. The second contact portion 92 may be electrically connected to the second metal layer 35. The second contact portion 92 may contact the upper surface of the second metal layer 35. The second contact portion 92 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo. The second contact portion 92 may be formed of the same material as the first contact portion 91. In addition, the first contact portion 91 and the second contact portion 92 may be formed of different materials.

According to an embodiment, power may be applied to the light emitting structure 10 through the first electrode 81 and the second electrode 82. For example, in the light emitting device according to the embodiment, power may be applied to the light emitting structure 10 by applying power to the conductive support member 70 and the second contact portion 92 of the first electrode 81. Will be.

Accordingly, power may be provided to the first conductive semiconductor layer 11 through a method of attaching the conductive support member 70 to a bonding pad. According to an embodiment, the second contact portion 92 may be electrically connected to the second electrode 82. Accordingly, power may be provided to the second conductive semiconductor layer 13 by connecting the second contact portion 92 to a power pad through wire bonding or the like.

As described above, according to the light emitting device, power may be provided to the light emitting structure 10 through the conductive support member 70 and the second contact portion 92. Accordingly, according to the embodiment, it is possible to prevent current concentration and improve electrical reliability.

The light emitting device according to the embodiment forms the through hole 20 from the upper surface direction of the light emitting structure 10. In addition, since the insulating ion implantation layer 31 disposed around the first contact portion 91 may be formed by an implantation process, the width of the through hole 20 and the first contact portion 91 are formed. ) Width can be reduced. This can simplify the manufacturing process and improve the manufacturing yield. In addition, the light emitting device according to the embodiment may reduce the electrode area disposed on the upper surface of the light emitting structure 10, and a protective layer may not be disposed on the upper surface or the side surface of the light emitting structure 10. Accordingly, the light extraction efficiency extracted from the light emitting structure 10 to the outside can be improved.

8 is a view showing a light emitting device package to which the light emitting device according to the embodiment is applied.

Referring to FIG. 8, the light emitting device package according to the embodiment may include a body 120, a first lead electrode 131 and a second lead electrode 132 disposed on the body 120, and the body 120. The light emitting device 100 according to the embodiment, which is provided to and electrically connected to the first lead electrode 131 and the second lead electrode 132, and the molding member 140 surrounding the light emitting device 100. It may include.

The body 120 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first lead electrode 131 and the second lead electrode 132 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first lead electrode 131 and the second lead electrode 132 may increase light efficiency by reflecting light generated from the light emitting device 100, and heat generated from the light emitting device 100. It may also play a role in discharging it to the outside.

The light emitting device 100 may be disposed on the body 120 or on the first lead electrode 131 or the second lead electrode 132.

The light emitting device 100 may be electrically connected to the first lead electrode 131 and the second lead electrode 132 by any one of a wire method, a flip chip method, and a die bonding method.

The molding member 140 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 140 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages may be arranged on a substrate, and an optical member such as a lens, a light guide plate, a prism sheet, and a diffusion sheet may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. The light unit may be implemented in a top view or a side view type, and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to an illumination device and a pointing device. Yet another embodiment may be implemented as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a street lamp, a signboard, a headlamp.

The light emitting device according to the embodiment may be applied to the light unit. The light unit may include a structure in which a plurality of light emitting elements are arranged, and may include the display device illustrated in FIGS. 9 and 10 and the illumination device illustrated in FIG. 11.

Referring to FIG. 9, the display device 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 providing light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 may be defined as a light unit 1050.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based, such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN) It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

At least one light emitting module 1031 may be provided, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device or a light emitting device package 200 according to the embodiment described above. The light emitting device package 200 may be arranged on the substrate 1033 at predetermined intervals.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern. However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 200 is provided on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting device packages 200 may be mounted such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 200 may directly or indirectly provide light to a light incident portion that is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may accommodate the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with an accommodating part 1012 having a box shape having an upper surface opened thereto, but is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or non-metal material having good thermal conductivity, but is not limited thereto.

The display panel 1061 is, for example, an LCD panel and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizer may be attached to at least one surface of the display panel 1061, but the polarizer is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. In addition, a protective sheet may be disposed on the display panel 1061, but is not limited thereto.

Here, the light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

10 is a diagram illustrating another example of a display device according to an exemplary embodiment.

Referring to FIG. 10, the display device 1100 includes a bottom cover 1152, a substrate 1020 on which the above-described light emitting device 100 is arranged, an optical member 1154, and a display panel 1155. The substrate 1020 and the light emitting device package 200 may be defined as a light emitting module 1060. The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

11 is a view showing a lighting apparatus according to an embodiment.

Referring to FIG. 11, the lighting apparatus according to the embodiment may include a cover 2100, a light source module 2200, a radiator 2400, a power supply 2600, an inner case 2700, and a socket 2800. Can be. In addition, the lighting apparatus according to the embodiment may further include any one or more of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device package according to an embodiment.

For example, the cover 2100 may have a shape of a bulb or hemisphere, may be hollow, and may be provided in an open shape. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter or excite the light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat sink 2400. The cover 2100 may have a coupling part coupled to the heat sink 2400.

An inner surface of the cover 2100 may be coated with a milky paint. The milky paint may include a diffuser to diffuse light. The surface roughness of the inner surface of the cover 2100 may be greater than the surface roughness of the outer surface of the cover 2100. This is for the light from the light source module 2200 to be sufficiently scattered and diffused to be emitted to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 2100 may be transparent and opaque so that the light source module 2200 is visible from the outside. The cover 2100 may be formed through blow molding.

The light source module 2200 may be disposed on one surface of the heat sink 2400. Thus, heat from the light source module 2200 is conducted to the heat sink 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on an upper surface of the heat dissipator 2400, and has a plurality of light source parts 2210 and guide grooves 2310 into which the connector 2250 is inserted. The guide groove 2310 corresponds to the board and the connector 2250 of the light source unit 2210.

The surface of the member 2300 may be coated or coated with a light reflective material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 is reflected on the inner surface of the cover 2100 to reflect the light returned to the light source module 2200 side again toward the cover 2100. Therefore, it is possible to improve the light efficiency of the lighting apparatus according to the embodiment.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact may be made between the radiator 2400 and the connection plate 2230. The member 2300 may be formed of an insulating material to block an electrical short between the connection plate 2230 and the radiator 2400. The radiator 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to radiate heat.

The holder 2500 may block the accommodating groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 accommodated in the insulating unit 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside to provide the light source module 2200. The power supply unit 2600 is accommodated in the accommodating groove 2725 of the inner case 2700, and is sealed in the inner case 2700 by the holder 2500. The power supply unit 2600 may include a protrusion 2610, a guide unit 2630, a base 2650, and an extension unit 2670.

The guide part 2630 has a shape protruding outward from one side of the base 2650. The guide part 2630 may be inserted into the holder 2500. A plurality of parts may be disposed on one surface of the base 2650. The plurality of components may include, for example, a DC converter for converting AC power provided from an external power source into DC power, a driving chip for controlling the driving of the light source module 2200, and an ESD for protecting the light source module 2200. (ElectroStatic discharge) protection element and the like, but may not be limited thereto.

The extension part 2670 has a shape protruding outward from the other side of the base 2650. The extension part 2670 is inserted into the connection part 2750 of the inner case 2700 and receives an electrical signal from the outside. For example, the extension part 2670 may be provided to be equal to or smaller than the width of the connection part 2750 of the inner case 2700. Each end of the "+ wire" and the "-wire" may be electrically connected to the extension 2670, and the other end of the "+ wire" and the "-wire" may be electrically connected to the socket 2800. .

The inner case 2700 may include a molding unit together with the power supply unit 2600 therein. The molding part is a part where the molding liquid is hardened, so that the power supply part 2600 can be fixed inside the inner case 2700.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of the present invention.

In addition, the above description has been made with reference to the embodiments, which are merely exemplary and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated above in the range without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

10 Light emitting structure 11 First conductivity type semiconductor layer
12 Active Layer 13 Second Conducting Semiconductor Layer
15 Ohmic contact layer 17 Reflective layer
20 through hole 30 channel layer
31 Insulating ion implantation layer 33 First metal layer
35 Second metal layer 40 Insulation layer
50 Third Metal Layer 60 Bonding Layer
70 Conductive support member 81 First electrode
82 Second electrode 91 First contact portion
92 second contact part

Claims (21)

A light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer;
A first metal layer disposed under the light emitting structure and electrically connected to the first conductive semiconductor layer, a third metal layer disposed under the first metal layer, a bonding layer disposed under the third metal layer, and A first electrode including a support member disposed below the bonding layer;
A second electrode disposed under the light emitting structure and including an ohmic contact layer electrically connected to the second conductive semiconductor layer, a reflective layer disposed below the ohmic contact layer, and a second metal layer disposed below the reflective layer;
A first contact portion disposed through the light emitting structure, the first region being electrically connected to the first electrode, and the second region being in contact with an upper surface of the first conductivity type semiconductor layer;
An insulating ion implantation layer disposed around the first contact portion and insulating the first contact portion, the second conductive semiconductor layer, and the active layer;
An insulating layer disposed between the second metal layer and the third metal layer,
The third metal layer includes a protrusion contacting the bottom surface of the first metal layer,
The insulating ion implantation layer penetrates through the second conductivity type semiconductor layer and the active layer,
An upper surface of the insulating ion implantation layer is disposed in the first conductivity type semiconductor layer,
The first contact portion is disposed along a through hole of the light emitting structure to contact the first conductive semiconductor layer,
A portion of the insulating layer is disposed on the outermost side of the second metal layer and the other portion is disposed between the first metal layer and the second metal layer. The method of claim 1,
A second contact portion spaced apart from the light emitting structure and electrically connected to the second electrode;
And a second region of the first contact portion overlapping the insulating ion implantation layer in a vertical direction. The method of claim 1,
The first contact portion is disposed through the first conductive semiconductor layer, the active layer, the second conductive semiconductor layer. The method of claim 1,
The lower surface of the first contact portion and the lower surface of the second conductive semiconductor layer are disposed on the same plane. The method of claim 1,
The lower surface of the first electrode is disposed lower than the lower surface of the second electrode. The method of claim 1,
The insulating ion implantation layer is disposed between the active layer and the first contact portion,
The insulating ion implantation layer is disposed between the second conductivity type semiconductor layer and the first contact portion. The method of claim 1,
A light emitting device in which the upper surface of the first electrode and the upper surface of the second electrode are disposed on the same plane. The method of claim 2,
A channel layer exposed to a lower circumference of the light emitting structure to be in contact with a lower surface of the second conductivity type semiconductor layer,
And the second contact portion contacts the second metal layer through the channel layer. The method of claim 2,
The upper surface of the insulating layer is in contact with the lower surface of the insulating ion implantation layer. delete delete delete delete delete delete delete delete delete delete delete delete

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