KR102026098B1 - Light emitting device, light emitting device package, and light unit - Google Patents

Abstract

The light emitting device according to the embodiment may include a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; A reflective layer disposed under the light emitting structure; A support member disposed below the reflective layer; A bump structure disposed between the reflective layer and the support member and including a plurality of bump balls electrically connecting the reflective layer and the support member; It includes.

Description

Light-Emitting Device, Light-Emitting Device Package and Light Unit {LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHT UNIT}

Embodiments relate to a light emitting device, a light emitting device package, and a light unit.

Light emitting diodes (LEDs) are widely used as one of light emitting devices. Light-emitting diodes use the properties of compound semiconductors to convert electrical signals into light, such as infrared, visible and ultraviolet light.

As the light efficiency of light emitting devices increases, light emitting devices have been applied to various fields including display devices and lighting devices.

Republic of Korea Patent Application Publication No. 10-2013-0031674

The embodiment provides a light emitting device, a light emitting device package, and a light unit that can simplify the process, reduce manufacturing costs, and improve device reliability.

The light emitting device according to the embodiment may include a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; A reflective layer disposed under the light emitting structure; A support member disposed below the reflective layer; A bump structure disposed between the reflective layer and the support member and including a plurality of bump balls electrically connecting the reflective layer and the support member; It includes.

The light emitting device package according to the embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting device; The light emitting device includes: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; A reflective layer disposed under the light emitting structure; A support member disposed below the reflective layer; A bump structure disposed between the reflective layer and the support member and including a plurality of bump balls electrically connecting the reflective layer and the support member; It includes.

According to an embodiment, a light unit includes a substrate; A light emitting device disposed on the substrate; An optical member through which light provided from the light emitting device passes; The light emitting device includes: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; A reflective layer disposed under the light emitting structure; A support member disposed below the reflective layer; A bump structure disposed between the reflective layer and the support member and including a plurality of bump balls electrically connecting the reflective layer and the support member; It includes.

The light emitting device, the light emitting device package, and the light unit according to the embodiment have the advantage of simplifying the process, reducing the manufacturing cost, and improving the reliability of the device.

1 is a view showing a light emitting device according to an embodiment.
2 to 6 illustrate a method of manufacturing a light emitting device according to the embodiment.
7 is a view showing a light emitting device package according to the embodiment.
8 is a diagram illustrating a display device according to an exemplary embodiment.
9 is a diagram illustrating another example of a display device according to an exemplary embodiment.
10 is a view showing a lighting apparatus according to an embodiment.

In the description of an embodiment, each layer (region), region, pattern, or structure is "on" or "under" the substrate, each layer (film), region, pad, or pattern. In the case where it is described as being formed at, "up" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criteria for up / down or down / down each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer may be exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device, a light emitting device package, a light unit, and a light emitting device manufacturing method according to embodiments will be described in detail with reference to the accompanying drawings.

1 is a view showing a light emitting device according to an embodiment.

As shown in FIG. 1, the light emitting device according to the embodiment may include a light emitting structure 10, a reflective layer 20, a bump structure 30, and a support member 40.

The light emitting structure 10 may include a first conductive semiconductor layer 11, an active layer 12, and a second conductive semiconductor layer 13. The active layer 12 may be disposed between the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13. The active layer 12 may be disposed under the first conductive semiconductor layer 11, and the second conductive semiconductor layer 13 may be disposed under the active layer 12.

For example, the first conductivity type semiconductor layer 11 is formed of an n type semiconductor layer to which an n type dopant is added as a first conductivity type dopant, and the second conductivity type semiconductor layer 13 is a second conductivity type dopant. As a p-type dopant may be formed as a p-type semiconductor layer. In addition, the first conductive semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second conductive semiconductor layer 13 may be formed of an n-type semiconductor layer.

The first conductive semiconductor layer 11 may include, for example, an n-type semiconductor layer. The first conductivity type semiconductor layer 11 may be implemented as a compound semiconductor. The first conductivity type semiconductor layer 11 may be implemented as, for example, a group II-VI compound semiconductor or a group III-V compound semiconductor.

For example, a semiconductor having a compositional formula of the first conductive type semiconductor layer 11 is _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be implemented with materials. The first conductivity type semiconductor layer 11 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. N-type dopants such as Se and Te may be doped.

In the active layer 12, electrons (or holes) injected through the first conductivity type semiconductor layer 11 and holes (or electrons) injected through the second conductivity type semiconductor layer 13 meet each other. The layer emits light due to a band gap difference of an energy band according to a material forming the active layer 12. The active layer 12 may be formed of any one of a single well structure, a multiple well structure, a quantum dot structure, or a quantum line structure, but is not limited thereto.

The active layer 12 may be implemented with a compound semiconductor. The active layer 12 may be implemented by way of example to the Group II -VI group or a group III -V compound semiconductor. The active layer 12 is an example of a _{In x Al y Ga 1 -x- y} N (0≤x It can be implemented with a semiconductor material having a composition formula of ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1). When the active layer 12 is implemented as the multi-well structure, the active layer 12 may be implemented by stacking a plurality of well layers and a plurality of barrier layers, for example, an InGaN well layer / GaN barrier layer. Can be implemented in cycles.

The second conductive semiconductor layer 13 may be implemented with, for example, a p-type semiconductor layer. The second conductivity type semiconductor layer 13 may be implemented as a compound semiconductor. The second conductivity-type semiconductor layer 13 may be implemented by, for example, a group II-VI compound semiconductor or a group III-V compound semiconductor.

For example, a semiconductor having a composition formula of the second conductive type semiconductor layer 13 is _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be implemented with materials. The second conductive semiconductor layer 13 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like, and may include Mg, Zn, Ca, P-type dopants such as Sr and Ba may be doped.

Meanwhile, the first conductive semiconductor layer 11 may include a p-type semiconductor layer, and the second conductive semiconductor layer 13 may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed below the second conductive semiconductor layer 13. Accordingly, the light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures. In addition, the doping concentrations of the impurities in the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be uniformly or non-uniformly formed. That is, the structure of the light emitting structure 10 may be formed in various ways, but is not limited thereto.

In addition, a first conductivity type InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductivity type semiconductor layer 11 and the active layer 12. In addition, a second conductive AlGaN layer may be formed between the second conductive semiconductor layer 13 and the active layer 12.

The light emitting device according to the embodiment may include the reflective layer 20. The reflective layer 20 may be electrically connected to the second conductive semiconductor layer 13. The reflective layer 20 may be disposed under the light emitting structure 10. The reflective layer 20 may be disposed under the second conductive semiconductor layer 13. The reflective layer 20 may perform a function of increasing the amount of light extracted to the outside by reflecting light incident from the light emitting structure 10.

The light emitting device according to the embodiment may further include an ohmic contact layer disposed between the reflective layer 20 and the second conductive semiconductor layer 13. The ohmic contact layer may be in contact with the second conductivity type semiconductor layer 13. The ohmic contact layer may be formed to be in ohmic contact with the light emitting structure 10. The ohmic contact layer may include a region in ohmic contact with the light emitting structure 10. The ohmic contact layer may include a region in ohmic contact with the second conductive semiconductor layer.

The ohmic contact layer may be formed of, for example, a transparent conductive oxide film. Examples of the ohmic contact layer include indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide (AZO). ), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt, Ag, It may be formed of at least one material selected from Ti.

The reflective layer 20 may be formed of a material having a high reflectance. For example, the reflective layer 20 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the reflective layer 20 may be formed of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin-oxide (IZTO), and indium-aluminum-zinc- (AZO). Transmissive conductive materials such as Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in multiple layers. For example, in the exemplary embodiment, the reflective layer 20 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

For example, the reflective layer 20 may be formed by alternately forming an Ag layer and a Ni layer, and may include a Ni / Ag / Ni, Ti layer, or Pt layer. In addition, the ohmic contact layer may be formed under the reflective layer 20, and at least a portion thereof may be in ohmic contact with the light emitting structure 10 by passing through the reflective layer 20.

The reflective layer 20 may include a region that performs a reflective function and ohmic contact with the second conductive semiconductor layer 13, and may be implemented as an ohmic reflective layer.

The light emitting device according to the embodiment may include the support member 40 disposed under the reflective layer 20. The support member 40 may support the light emitting structure 10 according to the embodiment and perform a heat dissipation function. The support member 40 may be made of, for example, a conductive material. The support member 40 may be, for example, a semiconductor substrate in which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W or impurities are implanted (eg, Si, Ge, GaN, GaAs, ZnO, SiC, SiGe, etc.) may be included.

The light emitting device according to the embodiment may include the bump structure 30. The bump structure 30 may be disposed between the reflective layer 20 and the support member 40. The bump structure 30 may electrically connect the reflective layer 20 and the support member 40. The bump structure 30 may include a plurality of bump balls 33.

The bump structure 30 may include a first metal layer 31, the bump ball 33, and a second metal layer 35. The first metal layer 30 may be disposed under the reflective layer 20. The second metal layer 35 may be disposed on the support member 40. The bump balls 33 may be disposed between the first metal layer 31 and the second metal layer 33. The bump ball 33 may be in contact with a portion of the first metal layer 31 and a portion of the second metal layer 35. The first metal layer 31 and the second metal layer 35 may be spaced apart from each other between the plurality of bump balls 33.

The bump ball 33 disposed between the first metal layer 31 and the second metal layer 35 may have a width of, for example, 100 micrometers to 200 micrometers. The first metal layer 31 and the second metal layer 35 may have a thickness of, for example, 2 micrometers to 10 micrometers. The bump ball 33 may have a thickness of, for example, 80 micrometers to 100 micrometers.

The first metal layer 31, the bump ball 33, and the second metal layer 35 may be formed of the same material. In addition, the first metal layer 31, the bump ball 33, and the second metal layer 35 may be formed of different materials. The first metal layer 31, the bump ball 33, and the second metal layer 35 may include at least one of Au, Ag, Cu, and Ni. In addition, the first metal layer 31, the bump ball 33, and the second metal layer 35 may be formed of an alloy including at least one selected from Au, Ag, Cu, and Ni.

The light emitting device according to the embodiment does not include a bonding layer and a diffusion barrier layer applied to the existing vertical light emitting device. Conventional vertical light emitting devices require a bonding layer for bonding the upper light emitting structure and the lower support member. In addition, in the conventional vertical light emitting device, a diffusion barrier layer is required to prevent the material forming the bonding layer from diffusing in the direction of the light emitting structure to lower the reliability.

However, since the light emitting device according to the embodiment does not include a bonding layer, it is not necessary to include not only the bonding layer but also the diffusion barrier layer. The light emitting device according to the embodiment connects the reflective layer 20 and the support member 40 through the bump structure 30. Accordingly, since the process of depositing the bonding layer and the diffusion barrier layer applied to the conventional light emitting device is unnecessary, the process can be simplified and the material cost can be reduced. In addition, according to the embodiment it is possible to fundamentally solve the problem of reliability degradation and defects caused by the diffusion of the material constituting the bonding layer in the conventional light emitting device.

For example, the bump ball 33 may be formed using a bump bonder facility. The bump ball 33 may be formed on the first metal layer 31 or the second metal layer 35, and may be formed on the first metal layer 31 or the second metal layer 35 while applying current and force. The bump ball 33 may be formed by melting a wire.

Meanwhile, roughness may be formed on an upper surface of the first conductivity type semiconductor layer 11. Accordingly, it is possible to increase the amount of light extracted in the upper direction in the region where the roughness is formed.

The first electrode 50 may be disposed on the light emitting structure 10. In addition, a protective layer 60 may be disposed around the light emitting structure 10. The protective layer 60 may be formed of an insulator. The protective layer 60 may be formed of an oxide or a nitride. For example, the protective layer 60 may be at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. Can be selected and formed.

Next, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 2 to 6.

According to the method of manufacturing the light emitting device according to the embodiment, as shown in FIG. 2, the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 are formed on the substrate 5. Can be. The first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 may be defined as a light emitting structure 10.

The substrate 5 may be formed of, for example, at least one of sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, but is not limited thereto. A buffer layer may be further formed between the first conductivity type semiconductor layer 11 and the substrate 5.

For example, the first conductivity type semiconductor layer 11 is formed of an n type semiconductor layer to which an n type dopant is added as a first conductivity type dopant, and the second conductivity type semiconductor layer 13 is a second conductivity type dopant. As a p-type dopant may be formed as a p-type semiconductor layer. In addition, the first conductive semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second conductive semiconductor layer 13 may be formed of an n-type semiconductor layer.

The first conductive semiconductor layer 11 may include, for example, an n-type semiconductor layer. The first conductive semiconductor layer 11 is a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be formed. The first conductive semiconductor layer 11 may be selected from, for example, InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN, and the like, and doped with n-type dopants such as Si, Ge, Sn, Se, Te, or the like. Can be.

In the active layer 12, electrons (or holes) injected through the first conductive semiconductor layer 11 and holes (or electrons) injected through the second conductive semiconductor layer 13a meet each other. It is a layer that emits light due to a band gap difference of an energy band according to a material forming the active layer 12a. The active layer 12 may be formed of any one of a single well structure, a multiple well structure, a quantum dot structure, or a quantum line structure, but is not limited thereto.

The active layer 12 may be formed of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). When the active layer 12 is formed in the multi-well structure, the active layer 12 may be formed by stacking a plurality of well layers and a plurality of barrier layers, for example, at intervals of an InGaN well layer / GaN barrier layer Can be formed.

The second conductive semiconductor layer 13 may be implemented with, for example, a p-type semiconductor layer. The second conductive type semiconductor layer 13 of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be formed. The second conductive semiconductor layer 13 may be selected from, for example, InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, InN, and the like, and dopants such as Mg, Zn, Ca, Sr, and Ba may be doped. Can be.

Meanwhile, the first conductive semiconductor layer 11 may include a p-type semiconductor layer, and the second conductive semiconductor layer 13 may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed on the second conductive semiconductor layer 13.

Accordingly, the light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures. In addition, the doping concentrations of the impurities in the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be uniformly or non-uniformly formed. That is, the structure of the light emitting structure 10 may be formed in various ways, but is not limited thereto.

In addition, a first conductivity type InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductivity type semiconductor layer 11 and the active layer 12. In addition, a second conductive AlGaN layer may be formed between the second conductive semiconductor layer 13 and the active layer 12.

Next, as shown in FIG. 3, the reflective layer 20 may be formed on the light emitting structure 10. The reflective layer 20 may be electrically connected to the second conductive semiconductor layer 13.

The light emitting device according to the embodiment may further include an ohmic contact layer disposed between the reflective layer 20 and the second conductive semiconductor layer 13. The ohmic contact layer may be in contact with the second conductivity type semiconductor layer 13. The ohmic contact layer may be formed to be in ohmic contact with the light emitting structure 10. The ohmic contact layer may include a region in ohmic contact with the light emitting structure 10. The ohmic contact layer may include a region in ohmic contact with the second conductive semiconductor layer.

The ohmic contact layer may be formed of, for example, a transparent conductive oxide film. Examples of the ohmic contact layer include indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide (AZO). ), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt, Ag, It may be formed of at least one material selected from Ti.

The reflective layer 20 may be formed of a material having a high reflectance. For example, the reflective layer 20 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the reflective layer 20 may be formed of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin-oxide (IZTO), and indium-aluminum-zinc- (AZO). Transmissive conductive materials such as Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in multiple layers. For example, in the exemplary embodiment, the reflective layer 20 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

The reflective layer 20 may include a region that performs a reflective function and ohmic contact with the second conductive semiconductor layer 13, and may be implemented as an ohmic reflective layer.

Subsequently, as shown in FIG. 3, a first metal layer 31 and a bump ball 33 may be formed on the reflective layer 20. The first metal layer 31 and the bump ball 33 may be formed of the same material or may be formed of different materials.

The bump ball 33 may have a width of, for example, 100 micrometers to 200 micrometers. The first metal layer 31 may have a thickness of, for example, 2 micrometers to 10 micrometers. The bump ball 33 may have a thickness of, for example, 80 micrometers to 100 micrometers.

The first metal layer 31 and the bump ball 33 may include at least one of Au, Ag, Cu, and Ni. In addition, the first metal layer 31 and the bump ball 33 may be formed of an alloy including at least one selected from Au, Ag, Cu, and Ni.

For example, the bump ball 33 may be formed using a bump bonder facility. The bump ball 33 may be formed on the first metal layer 31, and the bump ball 33 may be formed by melting a wire on the first metal layer 31 while applying current and force.

On the other hand, as shown in Figure 4, the support member 40 is formed on a separate temporary substrate 70, the second metal layer 35 may be formed on the support member 40.

The support member 40 may be made of, for example, a conductive material. The support member 40 may be, for example, a semiconductor substrate in which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W or impurities are implanted (eg, Si, Ge, GaN, GaAs, ZnO, SiC, SiGe, etc.) may be included.

The second metal layer 35 may be formed of the same material as the first metal layer 31. In addition, the second metal layer 35 may be formed of a material different from that of the first metal layer 31. The second metal layer 35 may include at least one of Au, Ag, Cu, and Ni. In addition, the second metal layer 35 may be formed of an alloy including at least one selected from Au, Ag, Cu, and Ni.

Next, as shown in FIG. 5, the bump ball 33 and the second metal layer 35 may be connected. The first metal layer 31, the bump ball 33, and the second metal layer 35 may be defined as bump structures 30.

In addition, the substrate 5 may be removed from the first conductivity type semiconductor layer 11. As one example, the substrate 5 may be removed by a laser lift off (LLO) process. The laser lift-off process LLO is a process of irradiating a lower surface of the substrate 5 to peel the substrate 5 and the first conductive semiconductor layer 11 from each other.

As shown in FIG. 6, the side surface of the light emitting structure 10 may be etched by isolating etching, and a portion of the reflective layer 20 may be exposed. The isolation etching may be performed by dry etching such as, for example, an inductively coupled plasma (ICP), but is not limited thereto.

Roughness may be formed on an upper surface of the light emitting structure 10. A light extraction pattern may be provided on an upper surface of the light emitting structure 10. An uneven pattern may be provided on an upper surface of the light emitting structure 10. The light extraction pattern provided on the light emitting structure 10 may be formed by, for example, a PEC (Photo Electro Chemical) etching process. Accordingly, according to the embodiment, it is possible to increase the external light extraction effect.

Next, a first electrode 50 may be formed on the light emitting structure 10, and a protective layer 60 may be formed around the light emitting structure. The protective layer 60 may be formed of an oxide or a nitride. In addition, the temporary substrate 70 may be removed.

The light emitting device according to the embodiment may include the bump structure 30. The bump structure 30 may be disposed between the reflective layer 20 and the support member 40. The bump structure 30 may electrically connect the reflective layer 20 and the support member 40. The bump structure 30 may include a plurality of bump balls 33.

The bump structure 30 may include a first metal layer 31, the bump ball 33, and a second metal layer 35. The first metal layer 30 may be disposed under the reflective layer 20. The second metal layer 35 may be disposed on the support member 40. The bump balls 33 may be disposed between the first metal layer 31 and the second metal layer 33. The bump ball 33 may be in contact with a portion of the first metal layer 31 and a portion of the second metal layer 35. The first metal layer 31 and the second metal layer 35 may be spaced apart from each other between the plurality of bump balls 33.

The bump ball 33 disposed between the first metal layer 31 and the second metal layer 35 may have a width of, for example, 100 micrometers to 200 micrometers. The first metal layer 31 and the second metal layer 35 may have a thickness of, for example, 2 micrometers to 10 micrometers. The bump ball 33 may have a thickness of, for example, 80 micrometers to 100 micrometers.

The first metal layer 31, the bump ball 33, and the second metal layer 35 may be formed of the same material. In addition, the first metal layer 31, the bump ball 33, and the second metal layer 35 may be formed of different materials. The first metal layer 31, the bump ball 33, and the second metal layer 35 may include at least one of Au, Ag, Cu, and Ni. In addition, the first metal layer 31, the bump ball 33, and the second metal layer 35 may be formed of an alloy including at least one selected from Au, Ag, Cu, and Ni.

The light emitting device according to the embodiment does not include a bonding layer and a diffusion barrier layer applied to the existing vertical light emitting device. Conventional vertical light emitting devices require a bonding layer for bonding the upper light emitting structure and the lower support member. In addition, in the conventional vertical light emitting device, a diffusion barrier layer is required to prevent the material forming the bonding layer from diffusing in the direction of the light emitting structure to lower the reliability.

However, since the light emitting device according to the embodiment does not include a bonding layer, it is not necessary to include not only the bonding layer but also the diffusion barrier layer. The light emitting device according to the embodiment connects the reflective layer 20 and the support member 40 through the bump structure 30. Accordingly, since the process of depositing the bonding layer and the diffusion barrier layer applied to the conventional light emitting device is unnecessary, the process can be simplified and the material cost can be reduced. In addition, according to the embodiment it is possible to fundamentally solve the problem of reliability degradation and defects caused by the diffusion of the material constituting the bonding layer in the conventional light emitting device.

On the other hand, Figure 7 is a view showing a light emitting device package to which the light emitting device according to the embodiment.

Referring to FIG. 7, the light emitting device package according to the embodiment may include a body 120, a first lead electrode 131 and a second lead electrode 132 disposed on the body 120, and the body 120. The light emitting device 100 according to the embodiment, which is provided to and electrically connected to the first lead electrode 131 and the second lead electrode 132, and the molding member 140 surrounding the light emitting device 100. It may include.

The body 120 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first lead electrode 131 and the second lead electrode 132 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first lead electrode 131 and the second lead electrode 132 may increase light efficiency by reflecting light generated from the light emitting device 100, and heat generated from the light emitting device 100. It may also play a role in discharging it to the outside.

The light emitting device 100 may be disposed on the body 120 or on the first lead electrode 131 or the second lead electrode 132. The light emitting device 100 may be electrically connected to the first lead electrode 131 and the second lead electrode 132 by any one of a wire method, a flip chip method, and a die bonding method.

The molding member 140 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 140 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages may be arranged on a substrate, and an optical member such as a lens, a light guide plate, a prism sheet, and a diffusion sheet may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. The light unit may be implemented in a top view or a side view type, and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to an illumination device and a pointing device. Yet another embodiment may be implemented as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a street lamp, a signboard, a headlamp.

The light emitting device according to the embodiment may be applied to the light unit. The light unit may include a structure in which a plurality of light emitting elements are arranged, and may include the display device illustrated in FIGS. 8 and 9 and the illumination device illustrated in FIG. 10.

Referring to FIG. 8, the display device 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The light unit 1050 may include the bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based, such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN) It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

At least one light emitting module 1031 may be provided, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device or a light emitting device package 200 according to the embodiment described above. The light emitting device package 200 may be arranged on the substrate 1033 at predetermined intervals.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern. However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 200 is provided on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting device packages 200 may be mounted such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 200 may directly or indirectly provide light to a light incident portion that is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may accommodate the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with an accommodating part 1012 having a box shape having an upper surface opened thereto, but is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or non-metal material having good thermal conductivity, but is not limited thereto.

The display panel 1061 is, for example, an LCD panel and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizer may be attached to at least one surface of the display panel 1061, but the polarizer is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. In addition, a protective sheet may be disposed on the display panel 1061, but is not limited thereto.

Here, the light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

9 is a diagram illustrating another example of a display device according to an exemplary embodiment.

Referring to FIG. 9, the display device 1100 includes a bottom cover 1152, a substrate 1020 on which the light emitting device 100 disclosed above is arranged, an optical member 1154, and a display panel 1155. The substrate 1020 and the light emitting device package 200 may be defined as a light emitting module 1060. The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

10 is a view showing a lighting apparatus according to an embodiment.

Referring to FIG. 10, the lighting apparatus according to the embodiment may include a cover 2100, a light source module 2200, a radiator 2400, a power supply 2600, an inner case 2700, and a socket 2800. Can be. In addition, the lighting apparatus according to the embodiment may further include any one or more of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device package according to an embodiment.

For example, the cover 2100 may have a shape of a bulb or hemisphere, may be hollow, and may be provided in an open shape. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter or excite the light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat sink 2400. The cover 2100 may have a coupling part coupled to the heat sink 2400.

An inner surface of the cover 2100 may be coated with a milky paint. The milky paint may include a diffuser to diffuse light. The surface roughness of the inner surface of the cover 2100 may be greater than the surface roughness of the outer surface of the cover 2100. This is for the light from the light source module 2200 to be sufficiently scattered and diffused to be emitted to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 2100 may be transparent and opaque so that the light source module 2200 is visible from the outside. The cover 2100 may be formed through blow molding.

The light source module 2200 may be disposed on one surface of the heat sink 2400. Thus, heat from the light source module 2200 is conducted to the heat sink 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on an upper surface of the heat dissipator 2400, and has a plurality of light source parts 2210 and guide grooves 2310 into which the connector 2250 is inserted. The guide groove 2310 corresponds to the board and the connector 2250 of the light source unit 2210.

The surface of the member 2300 may be coated or coated with a light reflective material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 is reflected on the inner surface of the cover 2100 to reflect the light returned to the light source module 2200 side again toward the cover 2100. Therefore, it is possible to improve the light efficiency of the lighting apparatus according to the embodiment.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact may be made between the radiator 2400 and the connection plate 2230. The member 2300 may be formed of an insulating material to block an electrical short between the connection plate 2230 and the radiator 2400. The radiator 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to radiate heat.

The holder 2500 may block the accommodating groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 accommodated in the insulating unit 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside to provide the light source module 2200. The power supply unit 2600 is accommodated in the accommodating groove 2725 of the inner case 2700, and is sealed in the inner case 2700 by the holder 2500. The power supply unit 2600 may include a protrusion 2610, a guide unit 2630, a base 2650, and an extension unit 2670.

The guide part 2630 has a shape protruding outward from one side of the base 2650. The guide part 2630 may be inserted into the holder 2500. A plurality of parts may be disposed on one surface of the base 2650. The plurality of components may include, for example, a DC converter for converting AC power provided from an external power source into DC power, a driving chip for controlling the driving of the light source module 2200, and an ESD for protecting the light source module 2200. (ElectroStatic discharge) protection element and the like, but may not be limited thereto.

The extension part 2670 has a shape protruding outward from the other side of the base 2650. The extension part 2670 is inserted into the connection part 2750 of the inner case 2700 and receives an electrical signal from the outside. For example, the extension part 2670 may be provided to be equal to or smaller than the width of the connection part 2750 of the inner case 2700. Each end of the "+ wire" and the "-wire" may be electrically connected to the extension 2670, and the other end of the "+ wire" and the "-wire" may be electrically connected to the socket 2800. .

The inner case 2700 may include a molding unit together with the power supply unit 2600 therein. The molding part is a part where the molding liquid is hardened, so that the power supply part 2600 can be fixed inside the inner case 2700.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of the present invention.

In addition, the above description has been made with reference to the embodiments, which are merely exemplary and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated above in the range without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

10 Light emitting structure 11 First conductivity type semiconductor layer
12 Active Layer 13 Second Conducting Semiconductor Layer
20 Reflective Layer 30 Bump Structure
31 First Metal Layer 33 Bump Ball
35 Second metal layer 40 Support member
50 First electrode 60 Protective layer
70 Temporary Board

Claims (12)

Conductive substrates;
A light emitting structure on the conductive substrate, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
A reflective layer disposed between the light emitting structure and the conductive substrate;
A first electrode disposed on the light emitting structure; And
And a bump structure disposed between the reflective layer and the conductive substrate, the bump structure including a plurality of bump balls electrically connecting the reflective layer and the conductive substrate.
The bump structure includes a first metal layer disposed on a bottom surface of the reflective layer, a second metal layer disposed on the conductive substrate, and the plurality of bump balls disposed between the first metal layer and the second metal layer.
The bump structure includes a first area in which the bump ball is disposed,
The width in the horizontal direction of the conductive substrate and the first region is equal to or greater than the width in the horizontal direction of the bottom surface of the light emitting structure,
The light emitting device of claim 1, wherein the first electrode and the first region overlap vertically. The method of claim 1,
The first metal layer is in direct contact with the bottom surface of the reflective layer, the second metal layer is in direct contact with the top surface of the conductive substrate. The method of claim 1,
The bump ball is in contact with a portion of the first metal layer and a portion of the second metal layer. The method of claim 3,
The first metal layer, the second metal layer, and the bump ball are formed of the same material. The method of claim 3,
The bump ball disposed between the first metal layer and the second metal layer has a width of 100 micrometers to 200 micrometers. The method of claim 1,
The first metal layer and the second metal layer has a thickness of 2 micrometers to 10 micrometers. The method of claim 5,
The bump ball is a light emitting device having a thickness of 80 micrometers to 100 micrometers. The method of claim 1,
The plurality of bump balls are spaced apart from each other,
And the first metal layer and the second metal layer are spaced apart from each other between the plurality of bump balls. The method of claim 4, wherein
The first metal layer, the second metal layer, and the bump ball include at least one of Au, Ag, Cu, and Ni. Body;
A light emitting element disposed on the body and according to any one of claims 1 to 9;
And a first lead electrode and a second lead electrode electrically connected to the light emitting device. Board;
A light emitting device disposed on the substrate and according to any one of claims 1 to 9;
And an optical member through which light provided from the light emitting device passes. The method of claim 1,
The width of the bump ball decreases toward the conductive substrate toward the conductive substrate.

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