CN101937958B - Method for manufacturing gallium nitride based light-emitting diode with high light extracting efficiency - Google Patents
Method for manufacturing gallium nitride based light-emitting diode with high light extracting efficiency Download PDFInfo
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- CN101937958B CN101937958B CN2010102599940A CN201010259994A CN101937958B CN 101937958 B CN101937958 B CN 101937958B CN 2010102599940 A CN2010102599940 A CN 2010102599940A CN 201010259994 A CN201010259994 A CN 201010259994A CN 101937958 B CN101937958 B CN 101937958B
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- gallium nitride
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 70
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 12
- 238000000227 grinding Methods 0.000 claims abstract description 3
- 238000001039 wet etching Methods 0.000 claims abstract description 3
- 229910001020 Au alloy Inorganic materials 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 11
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 8
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 4
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 229910052594 sapphire Inorganic materials 0.000 abstract description 7
- 239000010980 sapphire Substances 0.000 abstract description 7
- 238000007747 plating Methods 0.000 abstract description 3
- 230000031700 light absorption Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
The invention discloses a method for manufacturing a gallium nitride based light-emitting diode with high light extracting efficiency, comprising the following steps of: providing a sapphire substrate; sequentially growing an N-GaN layer, a light-emitting layer and a P-GaN layer on the substrate; etching part of a surface with the P-GaN layer through a photomask etching process till the N-GaN layer is exposed; plating a transparent conductive layer on the P-GaN layer and the exposed N-GaN layer for forming an ohmic contact; removing part of the transparent conductive layer through a wet etching method to separate the transparent conductive layers on the P-GaN layer from the exposed N-GaN layer; respectively manufacturing a P-electrode and an N-electrode on the separated transparent conductive layers through a photomask etching process; and cutting the substrate into a plurality of light-emitting diode chips by grinding and thinning the substrate. The LED chips manufactured through the method avoid the light absorption and shade of large-area N-electrode metal in the traditional chip so as to improve the light-emitting brightness of the chips.
Description
Technical field
The present invention relates to the preparation technology of luminous semiconductor chip, particularly a kind of preparation method of highlight extract efficiency gallium nitride based light emitting diode.
Background technology
Light-emitting diode is to have an electrooptical device that P type semiconductor and N type semiconductor combine, and comes luminous through electronics and hole compound.The GaN based light-emitting diode comprises luminescence unit, and luminescence unit all has by the GaN sill processes and sequentially be formed on n type semiconductor layer, luminescent layer and p type semiconductor layer on the substrate that sapphire, silicon etc. process.
GaN base blue-ray LED is a kind of electroluminescent device, and the current expansion distribution has very important effect for the characteristic of entire device, influences characteristics such as the luminous uniformity of device active region, heat dispersion, reliability.At present, commercial GaN base blue green light LED generally all is epitaxially grown on the Sapphire Substrate of insulation with the MOCVD technology, because sapphire can not conduct electricity; Must utilize mesa structure, so the P type electrode of ohmic contact and N type electrode can only be in the same sides on epitaxial wafer surface, conventional GaN based LED construction; In the GaN of mesa structure base LED; Electric current is wanted the side direction transmission, because the doping content of N-GaN layer and lower limit layer can not be too high, lateral resistance can not ignore; Make mesa edge current density near N type electrode greater than place, caused current-crowding effect near P type electrode pad; As far as the powerful luminescent device of large tracts of land, the current crowding phenomenon can be even more serious.
In the electrode structure of present GaN based high-power LED, electric current is evenly expanded, should make electric current approaching through the resistance value size in different paths as far as possible.The solution that adopts at present generally has the electrode geometry of optimization, transparency conducting layer is set, and current barrier layer etc. is set.As shown in Figure 1 is a kind of GaN base light emitting diode chip of routine, and its structure comprises: P-GaN layer 11, transparency conducting layer 12, P electrode ohmic contact 13, N-GaN layer 14, N electrode ohmic contact 15; N electrode ohmic contact 15 generally directly is plated on the N-GaN layer 14 by metal level and forms; And in order to make the electric current even diffused; The N electrode metal need be around the periphery of whole LED chip, directly cause chip very most area blocked by metal, cause light effectively to penetrate; The metal electrode that directly is plated in N-GaN layer 14 surface in addition also can absorbing light, has influenced the light extraction efficiency of led chip greatly.
Summary of the invention
For solving the existing problem of above-mentioned existing led chip, the present invention aims to provide a kind of preparation method of highlight extract efficiency gallium nitride based light emitting diode; The present invention adopts the N electrode structure of improved GaN base LED; Make the electrically conducting transparent layer material be plated on the N-GaN layer and the formation good Ohmic contact; Avoid the shading and the absorbing light phenomenon of large tracts of land N electrode metal in the traditional die, thereby improved the luminosity of chip.
In order to achieve the above object, the present invention provides a kind of preparation method of highlight extract efficiency gallium nitride based light emitting diode, comprises following manufacturing process steps:
1) substrate is provided;
2) on substrate, grow successively N-GaN layer, luminescent layer and P-GaN layer;
3) through the operation of light shield etching, with the part mesa etch at P-GaN layer place to exposing the N-GaN layer;
4) on the N-GaN of P-GaN layer and exposure layer, plate transparency conducting layer, as ohmic contact;
5) through wet etch process, remove the partially transparent conductive layer, the transparency conducting layer on the N-GaN layer of P-GaN layer and exposure is separated;
6), on the transparency conducting layer after the separation, make P electrode and N electrode respectively through the operation of light shield etching;
7) substrate cuts into several light-emitting diode chip for backlight unit through grinding attenuate.
One of transparency conducting layer material selection ITO of the present invention, ZnO, In doping ZnO, Al doping ZnO, Ga doping ZnO or aforesaid combination in any; The etching solution that wet etching adopts is selected from HF, NH
4F, CH
3COOH, H
2SO
4, H
2O
2One of a kind of or aforesaid combination in any; The N electrode material is selected from one of Ni/Au alloy, Cr/Pt/Au alloy, Ti/Al/Ti/Au alloy or aforesaid combination in any; The P electrode material is selected from one of Ti/Au alloy, Pt/Au alloy, Ti/Al/Ti/Au alloy or aforesaid combination in any.
The invention has the beneficial effects as follows: transparency conducting layer is plated on the N-GaN layer forms ohmic contact; Because of transparency conducting layer can form good Ohmic contact with the N-GaN layer; The light transmission rate of transparency conducting layer is up to more than 90%; Only needing the metal of plating small size on transparency conducting layer can obtain uniform extend current on the electrode structure, and avoiding metal electrode shading phenomenon, thereby improving the luminosity of led chip as routing.
Description of drawings
Fig. 1 is conventional GaN base light emitting diode chip structure vertical view.
Fig. 2 is the section of structure that the present invention makes highlight extract efficiency GaN base light emitting diode chip.
Fig. 3 is the structure vertical view that the present invention makes highlight extract efficiency GaN base light emitting diode chip.
Embodiment
Below in conjunction with accompanying drawing and embodiment the preparation method of highlight extract efficiency gallium nitride LED chip of the present invention is further specified, its manufacture craft is following:
Shown in Fig. 2 and 3, at first on Sapphire Substrate 21, grow successively N-GaN layer 22, luminescent layer 23 and P-GaN layer 24; Again through the operation of light shield etching, with the part mesa etch at P-GaN layer 24 place to exposing N-GaN layer 22; Plating ITO transparency conducting layer 251 and 252 on the N-GaN layer 22 of P-GaN layer 24 and exposure is as ohmic contact; Through wet etch process, remove the partially transparent conductive layer, the ITO transparency conducting layer 252 on the N-GaN layer of ITO transparency conducting layer 251 and exposure on the P-GaN layer is separated, wherein etching solution is by HF, NH
4F, CH
3COOH, H
2SO
4, H
2O
2Form; Through the operation of light shield etching, on ITO transparency conducting layer after the separation 251 and ITO transparency conducting layer 252, make P electrode 26 and N electrode 27 respectively, P electrode 26 is the Ti/Au alloy electrode, N electrode 27 is the Ni/Au alloy electrode; At last substrate is ground attenuate, cut into some light-emitting diode chip for backlight unit.
Shown in Figure 2 for highlight extract efficiency gallium nitride-based high-brightness led chip according to above-mentioned prepared, comprising: Sapphire Substrate 21; N-GaN layer 22 is formed on the Sapphire Substrate 21, and luminous zone 23 is formed on the N-GaN layer 22, and P-GaN layer 24 is formed on the luminous zone 23; ITO transparency conducting layer 251 is formed on the P-GaN layer 26; ITO transparency conducting layer 252 is formed on the N-GaN layer 22; The P electrode 26 that the Ti/Au alloy is made is formed on the ITO transparency conducting layer 251, and the N electrode 27 that the Ni/Au alloy is made is formed on the ITO transparency conducting layer 252.
Above embodiment only supplies to explain the present invention's usefulness, but not limitation of the present invention, those skilled in the art under the situation that does not break away from the spirit and scope of the present invention, can also make various conversion or variation; Therefore, all technical schemes that are equal to all belong to protection category of the present invention, are limited each claim.
Claims (5)
1.
The preparation method of highlight extract efficiency gallium nitride based light emitting diode, its processing step is following:
1) substrate is provided;
2) on substrate, grow successively N-GaN layer, luminescent layer and P-GaN layer;
3) through the operation of light shield etching, with the part mesa etch at P-GaN layer place to exposing the N-GaN layer;
4) on the N-GaN of P-GaN layer and exposure layer, plate transparency conducting layer, as ohmic contact;
5) through wet etch process, remove the partially transparent conductive layer, the transparency conducting layer on the N-GaN layer of P-GaN layer and exposure is separated;
6), on the transparency conducting layer after the separation, make P electrode and N electrode respectively through the operation of light shield etching;
7) substrate cuts into several light-emitting diode chip for backlight unit through grinding attenuate.
2.
The preparation method of highlight extract efficiency gallium nitride based light emitting diode as claimed in claim 1 is characterized in that one of transparency conducting layer material selection ITO, ZnO, In doping ZnO, Al doping ZnO, Ga doping ZnO or aforesaid combination in any.
3.
The preparation method of highlight extract efficiency gallium nitride based light emitting diode as claimed in claim 1 is characterized in that the etching solution that wet etching adopts is selected from HF, NH
4F, CH
3COOH, H
2SO
4, H
2O
2One of a kind of or aforesaid combination in any.
4.
The preparation method of highlight extract efficiency gallium nitride based light emitting diode as claimed in claim 1 is characterized in that the N electrode material is selected from one of Ni/Au alloy, Cr/Pt/Au alloy, Ti/Al/Ti/Au alloy or aforesaid combination in any.
5.
The preparation method of highlight extract efficiency gallium nitride based light emitting diode as claimed in claim 1 is characterized in that the P electrode material is selected from one of Ti/Au alloy, Pt/Au alloy, Ti/Al/Ti/Au alloy or aforesaid combination in any.
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| CN2010102599940A CN101937958B (en) | 2010-08-23 | 2010-08-23 | Method for manufacturing gallium nitride based light-emitting diode with high light extracting efficiency |
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| CN2010102599940A CN101937958B (en) | 2010-08-23 | 2010-08-23 | Method for manufacturing gallium nitride based light-emitting diode with high light extracting efficiency |
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| CN101937958A CN101937958A (en) | 2011-01-05 |
| CN101937958B true CN101937958B (en) | 2012-09-19 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103199171A (en) * | 2012-12-14 | 2013-07-10 | 华南理工大学 | Power type light-emitting diode (LED) chip of N type transparent electrode structure |
| CN103165780A (en) * | 2013-03-04 | 2013-06-19 | 中国科学院半导体研究所 | Method for manufacturing brightness-improved GaN-based light emitting diode (LED) chip |
| CN103682023A (en) * | 2013-12-30 | 2014-03-26 | 杭州士兰明芯科技有限公司 | LED (Light Emitting Diode) structure and electrode formation method thereof |
| CN110061107B (en) * | 2019-04-24 | 2020-10-02 | 深圳第三代半导体研究院 | Micron-sized light emitting diode chip and preparation method thereof |
| CN111312869B (en) * | 2020-03-04 | 2021-08-10 | 深圳市炬诠科技有限公司 | LED chip with nano titanium dioxide layer and preparation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1571175A (en) * | 2003-07-16 | 2005-01-26 | 璨圆光电股份有限公司 | Selective growing LED structure |
| KR20100067503A (en) * | 2008-12-11 | 2010-06-21 | 삼성엘이디 주식회사 | Nitride semiconductor light emitting device and method of manufacturing the same |
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| CN1158714C (en) * | 2000-06-20 | 2004-07-21 | 晶元光电股份有限公司 | High-brightness LED with distributed contact layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1571175A (en) * | 2003-07-16 | 2005-01-26 | 璨圆光电股份有限公司 | Selective growing LED structure |
| KR20100067503A (en) * | 2008-12-11 | 2010-06-21 | 삼성엘이디 주식회사 | Nitride semiconductor light emitting device and method of manufacturing the same |
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