CN100463241C - Process for producing quasi-vertical hybrid N-type GaN LED reversed chip with high-doping performance - Google Patents
Process for producing quasi-vertical hybrid N-type GaN LED reversed chip with high-doping performance Download PDFInfo
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- CN100463241C CN100463241C CNB200610124448XA CN200610124448A CN100463241C CN 100463241 C CN100463241 C CN 100463241C CN B200610124448X A CNB200610124448X A CN B200610124448XA CN 200610124448 A CN200610124448 A CN 200610124448A CN 100463241 C CN100463241 C CN 100463241C
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Abstract
A process method for a N type high mixed GaN LED chip includes: forming a GaN nucleation layer on a sapphirine underlay; forming a GaN cushion layer on the nucleation layer; forming a N type high mixed GaN ohm contacting layer, a MQWs sourcing layer of InGaN/GaN, a P type AlGaN modulated mixing layer and P type ohm contacting layer; etching with ICP or RIE on small part of P type ohm contacting layer and sourcing layer to expose N type high mixing layer; jointing the expending slice to the silicon underlay.
Description
Technical field
The present invention relates to a kind of production process of semiconductor device method, particularly relate to the highly doped GaNLED chip production method of a kind of quasi-vertical hybrid N-type.
Background technology
High-power and high-luminance light-emitting diode (LED) has the huge future that replaces incandescent lamp.Industrial, one of approach that produces white light is to utilize fluorescent material to cover blue-ray LED.Sapphire wafer is used as growth substrates growing gallium nitride base LED.Two electrodes of this LED are in the same side of epitaxial layer of gallium nitride, electric current congested (current crowding), and CURRENT DISTRIBUTION is inhomogeneous and can not to make full use of the luminescent layer material be the problem that this structure LED faces.In addition, the heat conductivility of Sapphire Substrate is low, and the led chip thermal resistance of this structure is bigger.Therefore, high-power gallium nitride based LED is badly in need of solving following problems: (1) radiating efficiency is low; (2) cost height; (3) light extraction efficiency and luminous power still need improve.These problems depend on structure and the growth substrates of LED to a great extent.
Gallium nitride based LED has two kinds of basic structures, and wherein a kind of is transversary above-mentioned (lateral), and two electrodes are in the same side of epitaxial layer of gallium nitride/sapphire growth substrate.Another basic structure is vertical stratification (vertical).Two electrodes of the gallium nitride based LED of vertical stratification are respectively in the both sides of epitaxial layer of gallium nitride.With respect to transversary LED, the CURRENT DISTRIBUTION of the gallium nitride based LED of vertical stratification is even, fully use the material of luminescent layer, current density is big, and operating voltage reduces, and resistance reduces, the heat that produces reduces, light extraction efficiency improves, and, use the vertical stratification gallium nitride based LED of support substrate to also have the advantage of good heat conductivity with high heat conductance.But the making of the gallium nitride based LED of vertical stratification relates generally to peel off growth substrates, and promptly with laser lift-off or Toyota's method or mechanical lapping, polishing method separation sapphire growth substrate and gallium nitride-based epitaxial layer, technology is very complicated.In order to obtain high efficiency to promote brightness, P-layer and the semi-conductive CURRENT DISTRIBUTION of N-layer (Currentspreading) are extremely important, and P-GaN and N-GaN need to do improvement for the cross direction profiles ability of its material electric current and could effectively raise the efficiency.In the galliumnitride base LED chip manufacturing process of vertical stratification how the structure of design chips, improve manufacture craft, improve P, N-GaN cross direction profiles ability to its material electric current, reduce the forward voltage of chip, improve the chip cooling problem, improving the quality of vertical stratification chip, is a several main difficult problem that faces in the device manufacturing process.The voltage height of high-power chip, principal element are that the resistance height comprises extension itself, electrode design and making, and the upside-down mounting welding procedure determines.Under nominal working conditions, the heat that the resistance height can make LED produce is excessive, so cause the junction temperature of device too high, the light extraction efficiency of device descends, reliability reduces.
Summary of the invention
1, the technical problem that will solve
Technical problem to be solved by this invention provides the highly doped GaNLED chip production method of a kind of quasi-vertical hybrid N-type, it can make the high power LED flip-chip CURRENT DISTRIBUTION even, the current density of LED is increased, the resistance of LED is reduced, the heat that produces reduces, light extraction efficiency promotes, thereby improves the quality and the performance of chip.
2, technical scheme
The object of the present invention is achieved like this: the preparation method of the highly doped GaN LED of a kind of quasi-vertical hybrid N-type flip-chip, it is characterized in that comprising the steps, at first, the highly doped N-GaN layer that on Sapphire Substrate, forms, its structure is Al, In, Ga, N, the highly doped GaN ohmic contact layer of In or Si, the doping magnitude is 8 * 10
18～1 * 10
20/ cm
3, its thickness is 0.05～0.5 μ m; P-GaN layer that on the N-GaN layer, forms and MQWs active layer; Active layer is between N-GaN layer and P-GaN layer, so that electrically contact with the formation of N-GaN layer; Then, coupling ion etching or reactive ion etching, fraction etching P type GaN layer and active layer expose N type heavily doped layer; At last the epitaxial wafer back-off is welded on the silicon substrate.
Purpose of the present invention can also realize like this: the N electrode of the highly doped GaN LED of described quasi-vertical hybrid N-type is with dry method or wet etching, fraction etching P type GaN layer, exposes highly doped N type GaN layer and forms.
Technical problem to be solved by this invention provides the highly doped GaN led chip of a kind of quasi-vertical hybrid N-type, it can effectively improve CURRENT DISTRIBUTION and P-GaN and the N-GaN layer cross direction profiles ability for its material electric current, make the material of luminescent layer be able to abundant application, make thermal source distribution and luminous intensity more even.Improve current density, CURRENT DISTRIBUTION uniformity and the heat-sinking capability of high power LED flip-chip, and reduce the resistance of LED; The present invention also will provide a kind of process of making this chip for this reason.
For solving the problems of the technologies described above, the highly doped GaN led chip of quasi-vertical hybrid N-type of the present invention is a flip-chip, is made up of highly doped epitaxial wafer of P-N electrode N type and the silicon substrate that has the reflector;
The highly doped epitaxial wafer of P-N electrode N type comprises Sapphire Substrate, and the highly doped N-GaN layer that forms on Sapphire Substrate is at P-GaN layer that forms on the N-GaN layer and (MQWs) active layer (active layer is between N-GaN layer and P-GaN layer); Then, with dry method or wet etching, fraction etching P type GaN layer and active layer expose N type heavily doped layer; By the P-N electrode that P-GaN layer and N-GaN layer are drawn respectively, the passivation layer of between the P-N electrode, growing;
The described silicon substrate that has the reflector is included in the electric isolation layer that forms on the intrinsic semiconductor silicon substrate, the metallic reflector that forms on this electric isolation layer;
Described P-N electrode epitaxial wafer carries out the upside-down mounting welding with the silicon substrate that has the reflector and forms high power LED flip-chip.
Described N type heavily doped layer is Al, In, and Ga, N, the highly doped GaN ohmic contact layer of In or Si, the doping magnitude is 8 * 10
18～1 * 10
20/ cm
3Its thickness is 0.05～0.5 μ m.
The N electrode of the highly doped GaN LED of described quasi-vertical hybrid N-type is with dry method or wet etching, vertically etches into highly doped N type GaN ohmic contact layer from P type GaN ohmic contact layer fraction position always and forms.
The highly doped galliumnitride base LED chip process for making of quasi-vertical hybrid N-type of the present invention comprises the steps:
At first make the highly doped epitaxial wafer of P-N electrode N type, and comprise the steps: on Sapphire Substrate, to adopt ICP (coupling ion etching) or RIE (reactive ion etching) equipment utilization chloride ion and argon ion to carry out dry etching, form P-GaN layer and luminescent layer, and P-GaN layer and luminescent layer and the highly doped N-GaN layer below it are formed electrically contact, during etching with photoresist or SiO
2Make mask; Adopt magnetron sputtering or electron beam evaporation to form the P-N electrode of drawing respectively by P-GaN layer and N-GaN layer; Between the P-N electrode, adopt the SiO of PECVD (plasma-reinforced chemical vapour deposition) growth one deck 70nm-120nm
2Passivation layer;
Make the silicon substrate that has the reflector then, comprise the steps: to utilize the electric isolation layer of PECVD deposit one deck P-N electrode on the intrinsic semiconductor silicon substrate, this electric isolation layer is SiO
2Or Si
3N
4Insulating barrier, thickness are 50nm-100nm, are the metallic reflector of 200nm-300nm with magnetron sputtering or electron beam evaporation one layer thickness then, and this metallic reflector adopts TiAl (titanium aluminium) or TiAg (titanium silver);
At last, the P-N electrode epitaxial wafer of making is divided into the device of 1000 μ m * 1000 μ m, the silicon substrate in the band reflector made is divided into the device of 1400 μ m * 1200 μ m, both are carried out flip chip bonding and be connected together with Die Bond (upside-down mounting welding) and Wire Bond (spun gold welding) equipment.
Because can making electric current not crowd, the high conductivity of N type heavily doped layer can evenly the electric current cross direction profiles be transmitted to whole element on every side at it, electric current is able to standard and vertically goes up through P type layer and active layer from dirty, then through N type heavily doped layer cross-current to the N electrode, the material of luminescent layer is able to abundant application, increases current density, reduces LED operating voltage and resistance, the heat that produces reduces, light extraction efficiency improves, and has improved CURRENT DISTRIBUTION effectively, makes thermal source distribution and luminous intensity more even.Therefore, adopt method of the present invention can make LED flip-chip CURRENT DISTRIBUTION even, the current density of LED is increased, the resistance of LED is reduced, the heat of generation reduces, and light extraction efficiency promotes, thereby improves the quality and the performance of chip.
Description of drawings
Fig. 1 prior art flip chip structure schematic diagram
The highly doped GaNLED chip structure of Fig. 2 quasi-vertical hybrid N-type of the present invention schematic diagram
Fig. 3 has the P-I characteristic of the flip-chip of N type heavily doped layer and no N type heavily doped layer.
The relation curve of the doping content of the volume resistance of Fig. 4 flip-chip and N type GaN doped layer.
Embodiment
Prior art flip chip structure schematic diagram mainly comprises Sapphire Substrate, N type GaN layer, active layer (MQW), P type GaN layer and silicon substrate as shown in Figure 1.
As shown in Figure 2, the highly doped GaN led chip of quasi-vertical hybrid N-type of the present invention is a flip-chip, is made up of highly doped epitaxial wafer of P-N electrode N type and the silicon substrate that has the reflector;
The highly doped epitaxial wafer of P-N electrode N type comprises Sapphire Substrate, and Sapphire Substrate has the characteristic that thermal conductivity coefficient is low and insulate.The highly doped N-GaN layer that forms on Sapphire Substrate is at P-GaN layer that forms on the N-GaN layer and (MQWs) active layer (active layer is between N-GaN layer and P-GaN layer); Then, with dry method or wet etching, fraction etching P type GaN layer and active layer expose N type heavily doped layer; By the P-N electrode that P-GaN layer and N-GaN layer are drawn respectively, the passivation layer of between the P-N electrode, growing;
For general flip-chip element as shown in Figure 1, electric current from dirty go up through P type layer then to active layer to produce light, then walk around N type layer and be confined to around the N electrode.For the highly doped GaN LED of quasi-vertical hybrid N-type element as shown in Figure 2, because of can making electric current not crowd, the high conductivity of N type heavily doped layer around it, can evenly the electric current cross direction profiles be transmitted to whole element, electric current is able to standard and vertically goes up through P type layer and active layer from dirty, then through N type heavily doped layer cross-current to the N electrode, the material of luminescent layer is able to abundant application, increase current density, reduce LED operating voltage and resistance, the heat that produces reduces, light extraction efficiency improves, improved CURRENT DISTRIBUTION effectively, made thermal source distribution and luminous intensity more even.Fig. 3 is power output-current characteristics (comparison diagram of P-I) of two kinds of elements.For the output of its light of the element that N type heavily doped layer is arranged in (I 〉=100mA) existing obviously improves during high electric current.The former has increased by 10%～20% with respect to the latter.Fig. 4 is the relation curve of the doping content of the volume resistance of flip-chip and N type GaN doped layer.As seen from Figure 4, the volume resistance of flip-chip is along with the concentration of N type GaN doped layer increases and reduces, and for general flip-chip, its doping content usually＜6 * 10
18/ cm
3If the doping content of heavily doped layer is 1 * 10
20/ cm
3, the ratio of the volume resistance of corresponding highly doped flip-chip and general flip-chip volume resistance is less than 1/2.
Below in conjunction with a specific embodiment high power LED flip-chip process for making of the present invention is described:
As shown in Figure 2, the highly doped GaN led chip of quasi-vertical hybrid N-type of the present invention mainly comprises highly doped N-GaN layer, P-GaN layer and (MQWs) active layer and silicon substrate.
The highly doped GaNLED chip production method of quasi-vertical hybrid N-type of the present invention comprises as follows, the highly doped N-GaN layer that on Sapphire Substrate, forms, at P-GaN layer that forms on the highly doped N-GaN layer and (MQWs) active layer (active layer is between N-GaN layer and P-GaN layer), electrically contact so that form with the N-GaN layer.Then, with dry method or wet etching, fraction etching P type GaN layer and active layer expose N type heavily doped layer.At last the epitaxial wafer back-off is welded on the silicon substrate.Adopt chip testing machine to test after the highly doped GaNLED chip preparation of quasi-vertical hybrid N-type is finished, analyze light, electricity, thermal parameter.
For preparing the highly doped GaN led chip of above-mentioned quasi-vertical hybrid N-type, preparation method of the present invention, may further comprise the steps: the highly doped LED structure extension sheet of utilization MOCVD (metal organic chemical vapor deposition) equipment epitaxial growth GaN base N type, substrate is sapphire (Al
2O
3); Heavily doped layer is Al, In, and Ga, N, the highly doped GaN ohmic contact layer of In or Si, the doping magnitude is 8 * 10
18～1 * 10
20/ cm
2
Adopt ICP (coupling ion etching) or RIE (reactive ion etching) equipment utilization chloride ion and argon ion to carry out dry etching, the P-GaN layer and the luminescent layer that form, and P-GaN layer and luminescent layer and the highly doped N-GaN layer below it are formed electrically contact, during etching with photoresist or SiO
2Make mask.
Evaporation one layer thickness is the transparent conductive film ITO of 200nm-300nm on the P-GaN layer afterwards, as transparency conducting layer.
Adopting magnetron sputtering or electron beam evaporation difference evaporation to form with Ni/Au (nickel/gold) by P-GaN layer and highly doped N-GaN layer is the P-N electrode and the weld pad of metallic combination.
At last, the P-N electrode epitaxial wafer of making is divided into the device of 1000 μ m * 1000 μ m, the silicon substrate in the band reflector made is divided into the device of 1500 μ m * 1500 μ m with cutting machine.The P-N electrode epitaxial wafer that performs electrode is divided into the device of 1000 μ m * 1000 μ m with laser scribing means.Both are carried out flip chip bonding and be connected together with Die Bond (upside-down mounting welding) and Wire Bond (gold thread welding) equipment.
Claims (2)
1. the preparation method of the highly doped GaN LED of a quasi-vertical hybrid N-type flip-chip is characterized in that comprising the steps, at first, and the highly doped N-GaN layer that on Sapphire Substrate, forms, its structure is Al, In, Ga, N, the highly doped GaN ohmic contact layer of In or Si, the doping magnitude is 8 * 10
18～1 * 10
20/ cm
3, its thickness is 0.05～0.5 μ m; P-GaN layer that on the N-GaN layer, forms and MQWs active layer; Active layer is between N-GaN layer and P-GaN layer, so that electrically contact with the formation of N-GaN layer; Then, coupling ion etching or reactive ion etching, fraction etching P type GaN layer and active layer expose N type heavily doped layer; At last the epitaxial wafer back-off is welded on the silicon substrate.
2. the preparation method of the highly doped GaN LED of quasi-vertical hybrid N-type as claimed in claim 1 flip-chip, it is characterized in that: the N electrode of the highly doped GaN LED of described quasi-vertical hybrid N-type is with dry method or wet etching, fraction etching P type GaN layer, exposes highly doped N type GaN layer and forms.
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| CN102130254B (en) * | 2010-09-29 | 2015-03-11 | 映瑞光电科技(上海)有限公司 | Light emitting device and manufacturing method thereof |
| KR101189081B1 (en) * | 2010-12-16 | 2012-10-10 | 엘지이노텍 주식회사 | Wafer substrate bonding structure, light emitting diode comprising the same and manufacturing method thereof |
| CN102800778B (en) * | 2011-05-27 | 2015-03-18 | 东莞市福地电子材料有限公司 | Light-emitting diode with inverted chip and manufacturing method of light-emitting diode |
| CN103258819A (en) * | 2013-04-16 | 2013-08-21 | 佛山市领华电子实业有限公司 | LED multi-cup integrated COB package implementation method |
| CN104779331A (en) * | 2015-03-12 | 2015-07-15 | 聚灿光电科技股份有限公司 | GaN-based LED (Light-Emitting Diode) device with two-dimensional electron gas structure, and preparation method for GaN-based LED device |
| CN111312869B (en) * | 2020-03-04 | 2021-08-10 | 深圳市炬诠科技有限公司 | LED chip with nano titanium dioxide layer and preparation method |
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| CN1780002A (en) * | 2004-11-19 | 2006-05-31 | 中国科学院半导体研究所 | Production of inverted gallium nitride base light emitting diode chip |
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