CN101308888A - Material construction for enhancing optical property and temperature stability of self-organizing quantum point - Google Patents
Material construction for enhancing optical property and temperature stability of self-organizing quantum point Download PDFInfo
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- CN101308888A CN101308888A CNA2007100991413A CN200710099141A CN101308888A CN 101308888 A CN101308888 A CN 101308888A CN A2007100991413 A CNA2007100991413 A CN A2007100991413A CN 200710099141 A CN200710099141 A CN 200710099141A CN 101308888 A CN101308888 A CN 101308888A
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Abstract
Disclosed is a material structure which is capable of improving optical temperature stability of self-organized quantum dots. The material structure comprises a substrate; a cushioning layer is arranged on the substrate to conceal the defect of the substrate so as to make the growth surface plane; a quantum well layer is arranged on the cushioning layer to generate stress relaxation during the growth and guides the stress relaxation to the quantum dot layer above so as to reduce the thickness of the wetting layer; a barrier layer is arranged on the quantum dot layer and is capable of restricting the current carrier in the quantum dot layer to avoid the weakening of optical temperature stability of the quantum dot material caused by thermally excited transition; a quantum dot layer is arranged on the barrier layer and generates electron hole pairs and radiates composite light when being excited; a cover layer is arranged on the quantum dot layer and is used to change the optical property of the quantum dots and to increase the level spacing between the ground state and the excited state.
Description
Technical field
The invention belongs to technical field of semiconductor, be meant a kind of material structure that improves optical property and temperature stability of self-organizing quantum point especially.
Background technology
Self-organized quantum dot demonstrates tempting application prospect at opto-electronic device as aspects such as laser, detector, optical storages.Theoretical prophesy: compare with quantum well semiconductor laser device, utilize quantum dot will have extremely low threshold current, high characteristic temperature, the high differential gain and extremely narrow breadth of spectrum line as the semiconductor laser of active area.Yet up to the present, semiconductor quantum dot laser job specification at room temperature also is far from reaching the level of theory expectation.And the temperature stability of quantum dot optics character is vital for the working and room temperature of realizing quantum dot laser, for making quanta point material better luminance temperature stability is arranged, and can take following this structure:
High barrier material improves optical property and temperature stability as carrier confining layer by growing.This structure by improve barrier height can be better with carrier confinement in quantum dot, reduce its probability by the soakage layer transition, improve the optical property and temperature stability of quantum dot.The shortcoming of this structure is: to improve the effect of optical property and temperature stability limited by improving barrier height, in case when temperature surpassed the critical temperature that charge carrier can the transition potential barrier, temperature stability just can decline to a great extent.
Summary of the invention
The objective of the invention is to, a kind of material structure that improves optical property and temperature stability of self-organizing quantum point is provided, it can improve the optical property and temperature stability of quanta point material.
The invention provides a kind of material structure that improves optical property and temperature stability of self-organizing quantum point, it is characterized in that, comprising:
One substrate;
One resilient coating, this resilient coating is produced on above the substrate, and the effect of this resilient coating is that shielding is from the defective of substrate with make growth plane smooth;
One quantum well layer, this quantum well layer is produced on above the resilient coating, produces stress relaxation when this quantum well layer is grown on barrier layer, and this stress relaxation is imported quantum dot layer above it, and soakage layer thickness is reduced;
One barrier layer, this barrier layer is produced on above the quantum well layer, and this barrier layer provides constraints to the charge carrier in the quantum dot layer, prevents the decline of the quanta point material optical property and temperature stability that it causes owing to the thermal excitation transition;
One quantum dot layer, this quantum dot layer is produced on above the barrier layer, produces electron-hole pair when this quantum dot layer is stimulated, and radiation recombination is luminous;
One cap rock, this fabrication of cover coat are on quantum dot layer, and the effect of this cap rock is the optical property that changes quantum dot, increase the energy level spacing of its ground state and excitation state.
The material of wherein selected substrate is a GaAs.
The material of wherein said resilient coating is a GaAs.
The material of wherein said quantum well layer is an InGaAsP.
The material of wherein said barrier layer is a GaAs.
The material of wherein said quantum dot layer is an indium arsenide.
The material of wherein said cap rock is a GaAs.
The wherein said resilient coating of making on substrate, quantum well layer, barrier layer, quantum dot layer, cap rock are to adopt the method for molecular beam epitaxy or metal organic chemical vapor deposition to grow.
The material structure of raising optical property and temperature stability of self-organizing quantum point of the present invention has advantages such as luminous mass is good, optical property and temperature stability is good.Be applicable to that quantum dot laser etc. needs the growth of methods such as the molecular beam epitaxy of the structure of semiconductor photoelectronic device active area of optical property and temperature stability and this active area structure or metal organic chemical vapor deposition.
Description of drawings
For further specifying content of the present invention, below in conjunction with accompanying drawing and instantiation it is further described, wherein:
Fig. 1 is the self-organized quantum dot material structural representation;
Fig. 2 is the luminescence generated by light halfwidth TEMPERATURE SPECTROSCOPY of self-organized quantum dot material.
Embodiment
Please, the present invention relates to a kind of self-organized quantum dot material structure in conjunction with consulting Fig. 1, comprising:
One substrate 6, the material of this substrate 6 is GaAs;
One resilient coating 1, this resilient coating 1 is produced on the substrate 6, the effect of this resilient coating 1 be shielding from the defective of substrate 6 with make growth plane smooth, the thickness of this resilient coating 1 is 100 nanometers, the material of this resilient coating 1 is a GaAs;
One quantum well layer 2, this quantum well layer 2 is produced on above the resilient coating 1, because the lattice constant of this quantum well layer 2 is greater than the barrier layer above it 3, when barrier layer 3 growths, can produce stress relaxation, and with this stress relaxation importing quantum dot layer 4, cause this moment quantum dot layer 4 hour just to begin into point at indium arsenide soakage layer thickness, therefore, original is that the tunnelling of charge carrier between the different size quantum dot that center-aisle carries out just is difficult to carry out with the soakage layer, the optical property and temperature stability of quantum dot just is improved, the thickness of this quantum well layer 2 is 5 nanometers, and the material of this quantum well layer 2 is InGaAsPs;
One barrier layer 3, this barrier layer 3 is produced on above the quantum well layer 2, charge carrier in 3 pairs of quantum dot layers 4 of this barrier layer provides constraints, prevent the decline of the quanta point material optical property and temperature stability that it causes owing to the thermal excitation transition, the thickness of this barrier layer 3 is 3 nanometers, and the material of this barrier layer 3 is GaAs;
One quantum dot layer 4, this quantum dot layer 4 is produced on above the barrier layer 3, produces electron-hole pair when this quantum dot layer 4 is stimulated, and radiation recombination is luminous, and the material of this quantum dot layer 4 is indium arsenides;
One cap rock 5, this cap rock 5 is produced on above the quantum dot layer 4, and the effect of this cap rock 5 is the optical properties that change quantum dot, increases the energy level spacing of its ground state and excitation state, and the thickness of this cap rock 5 is 100 nanometers, and the material of this cap rock 5 is GaAs;
Wherein said resilient coating 1, quantum well layer 2, barrier layer 3, quantum dot layer 4, the cap rock of making on substrate 65 is to adopt the method for molecular beam epitaxy or metal organic chemical vapor deposition to grow.
Please in conjunction with consulting Fig. 2, it is almost constant to see that its halfwidth raises with temperature, shows good optical character temperature stability by the luminescence generated by light halfwidth TEMPERATURE SPECTROSCOPY of the self-organized quantum dot material of above execution mode growth.Give among Fig. 2 and meet the control sample luminescence generated by light halfwidth TEMPERATURE SPECTROSCOPY that conventional halfwidth varies with temperature rule, can see that its halfwidth raises with temperature and the phenomenon that descends and afterwards rise earlier occur.
The present invention adopts and improves self-organized quantum dot optical property temperature stabilization The material structure of property, the self-organized quantum dot material of realization has luminous The advantages such as quality is good, optical property and temperature stability is good. Be applicable to quantum Dot lasers etc. need the semi-conductor photoelectronic of optical property and temperature stability The structure of device active region and the molecular beam epitaxy of this active area structure or The growth of the methods such as metal organic chemical vapor deposition.
Claims (8)
1, a kind of material structure that improves optical property and temperature stability of self-organizing quantum point is characterized in that, comprising:
One substrate;
One resilient coating, this resilient coating is produced on above the substrate, and the effect of this resilient coating is that shielding is from the defective of substrate with make growth plane smooth;
One quantum well layer, this quantum well layer is produced on above the resilient coating, produces stress relaxation when this quantum well layer is grown on barrier layer, and this stress relaxation is imported quantum dot layer above it, and soakage layer thickness is reduced;
One barrier layer, this barrier layer is produced on above the quantum well layer, and this barrier layer provides constraints to the charge carrier in the quantum dot layer, prevents the decline of the quanta point material optical property and temperature stability that it causes owing to the thermal excitation transition;
One quantum dot layer, this quantum dot layer is produced on above the barrier layer, produces electron-hole pair when this quantum dot layer is stimulated, and radiation recombination is luminous;
One cap rock, this fabrication of cover coat are on quantum dot layer, and the effect of this cap rock is the optical property that changes quantum dot, increase the energy level spacing of its ground state and excitation state.
2, the material structure of raising optical property and temperature stability of self-organizing quantum point according to claim 1 is characterized in that, the material of wherein selected substrate is a GaAs.
3, the material structure of raising optical property and temperature stability of self-organizing quantum point according to claim 1 is characterized in that, the material of wherein said resilient coating is a GaAs.
4, the material structure of raising optical property and temperature stability of self-organizing quantum point according to claim 1 is characterized in that, the material of wherein said quantum well layer is an InGaAsP.
5, the material structure of raising optical property and temperature stability of self-organizing quantum point according to claim 1 is characterized in that, the material of wherein said barrier layer is a GaAs.
6, the material structure of raising optical property and temperature stability of self-organizing quantum point according to claim 1 is characterized in that, the material of wherein said quantum dot layer is an indium arsenide.
7, the material structure of raising optical property and temperature stability of self-organizing quantum point according to claim 1 is characterized in that, the material of wherein said cap rock is a GaAs.
8, the material structure of raising optical property and temperature stability of self-organizing quantum point according to claim 1, it is characterized in that the wherein said resilient coating of making, quantum well layer, barrier layer, quantum dot layer, cap rock are to adopt the method for molecular beam epitaxy or metal organic chemical vapor deposition to grow on substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2007100991413A CN101308888A (en) | 2007-05-14 | 2007-05-14 | Material construction for enhancing optical property and temperature stability of self-organizing quantum point |
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| CNA2007100991413A CN101308888A (en) | 2007-05-14 | 2007-05-14 | Material construction for enhancing optical property and temperature stability of self-organizing quantum point |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006426A (en) * | 2015-06-29 | 2015-10-28 | 华南理工大学 | InAs quantum dot grown on GaAs substrate and preparation method therefor |
| CN105322064A (en) * | 2014-07-29 | 2016-02-10 | 首尔伟傲世有限公司 | UV light emitting diode |
| CN106410057A (en) * | 2016-11-08 | 2017-02-15 | Tcl集团股份有限公司 | QLED device of quantum well level structure |
| CN107424914A (en) * | 2017-07-11 | 2017-12-01 | 苏州大学 | The method of growing patterned quantum dot |
| CN109671823A (en) * | 2018-12-07 | 2019-04-23 | 中国科学院半导体研究所 | A kind of InP-base quantum dot material structure and the method for extending its emission wavelength |
| CN113471341A (en) * | 2021-05-26 | 2021-10-01 | 厦门大学 | Micro-LED structure based on red light AlInGaAs quantum dots and preparation method thereof |
-
2007
- 2007-05-14 CN CNA2007100991413A patent/CN101308888A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322064A (en) * | 2014-07-29 | 2016-02-10 | 首尔伟傲世有限公司 | UV light emitting diode |
| CN105322064B (en) * | 2014-07-29 | 2019-12-20 | 首尔伟傲世有限公司 | Ultraviolet light emitting diode |
| CN105006426A (en) * | 2015-06-29 | 2015-10-28 | 华南理工大学 | InAs quantum dot grown on GaAs substrate and preparation method therefor |
| CN105006426B (en) * | 2015-06-29 | 2018-06-22 | 华南理工大学 | The InAs quantum dots of growth on gaas substrates and preparation method thereof |
| CN106410057A (en) * | 2016-11-08 | 2017-02-15 | Tcl集团股份有限公司 | QLED device of quantum well level structure |
| CN107424914A (en) * | 2017-07-11 | 2017-12-01 | 苏州大学 | The method of growing patterned quantum dot |
| CN109671823A (en) * | 2018-12-07 | 2019-04-23 | 中国科学院半导体研究所 | A kind of InP-base quantum dot material structure and the method for extending its emission wavelength |
| CN113471341A (en) * | 2021-05-26 | 2021-10-01 | 厦门大学 | Micro-LED structure based on red light AlInGaAs quantum dots and preparation method thereof |
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