CN111355125A - GaAs/AIAs/AIAs Bragg reflector laser - Google Patents

GaAs/AIAs/AIAs Bragg reflector laser Download PDF

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Publication number
CN111355125A
CN111355125A CN201811570737.1A CN201811570737A CN111355125A CN 111355125 A CN111355125 A CN 111355125A CN 201811570737 A CN201811570737 A CN 201811570737A CN 111355125 A CN111355125 A CN 111355125A
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layer
aias
gaas
bragg reflector
type
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CN201811570737.1A
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李全杰
刘向英
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Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
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Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention relates to a GaAs/AIAs/AIAs Bragg reflector laser, which sequentially comprises the following structures from bottom to top: a substrate layer; a first distributed Bragg reflector layer; an n-type Ge semiconductor layer; an n-type Ge doped layer; a quantum well light emitting layer; an electron blocking layer; a p-type Ge doped layer; a p-type Ge semiconductor layer; a second distributed Bragg reflector layer; the laser adopts GaAs/AIAs superlattice material as a high refractive index material layer and AIAs material as a low refractive index material layer to form a distributed Bragg reflector, so that the laser has simple processing and better monochromaticity, can reduce the process difficulty and is not easy to fall off by replacing the traditional FB resonant cavity; and the first electron barrier layer and the second electron barrier layer are sequentially stacked on the quantum well light-emitting layer, so that excess electrons can be effectively prevented from being transited from the quantum well light-emitting layer to the p-type Ge semiconductor layer, and the light-emitting efficiency of the laser is improved.

Description

GaAs/AIAs/AIAs Bragg reflector laser
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a GaAs/AIAs/AIAs Bragg reflector laser.
Background
The semiconductor laser has the outstanding characteristics of high energy conversion efficiency, easiness in high-speed current modulation, microminiaturization, simple structure, long service life and the like, and is considered in the application of photoelectric integration. With the improvement of the technology of epitaxial growth of germanium on silicon, germanium semiconductor materials become a hot point of research, and particularly, the front edge of research on using germanium materials to prepare lasers as on-chip light sources is more important.
However, when the fabry perot resonator is used in the germanium-based laser, the wavelength is large, the number of coating layers of the high-reflection film is large, the process difficulty is high, and the high-reflection film is easy to fall off.
In addition, because the mobility of electrons in the semiconductor device is far higher than that of holes, electrons generated by the n-type semiconductor layer can rapidly enter the quantum well light-emitting layer, and the excess electrons are transited from the quantum well light-emitting layer to the p-type semiconductor layer, so that the electrons and the holes are subjected to non-radiative recombination, and the light-emitting efficiency of the light-emitting diode is influenced.
Disclosure of Invention
To solve the above problems in the prior art, the present invention provides a GaAs/AIAs/AIAs Bragg mirror laser. The technical problem to be solved by the invention is realized by the following technical scheme:
a GaAs/AIAs bragg mirror laser comprising:
a substrate layer;
the first distributed Bragg reflector layer is arranged on the substrate layer and comprises high-refractive-index material layers and low-refractive-index material layers which are alternately grown, and the high-refractive-index material layers are made of GaAs/AIAs superlattice materials; the low-refractive-index material layer is an AIAs material;
an n-type Ge semiconductor layer; the first distributed Bragg reflector layer is arranged on the first distributed Bragg reflector layer;
the n-type Ge doping layer is arranged on the n-type Ge semiconductor layer;
the quantum well light-emitting layer is arranged on the n-type Ge doping layer;
the electron barrier layer is arranged on the quantum well light-emitting layer; the electron barrier layer comprises a first electron barrier layer and a second electron barrier layer which are sequentially stacked on the quantum well light-emitting layer;
the p-type Ge doping layer is arranged on the quantum well light-emitting layer;
the p-type Ge semiconductor layer is arranged on the p-type Ge doping layer;
the second distributed Bragg reflector layer is arranged on the p-type Ge semiconductor layer and comprises high-refractive-index material layers and low-refractive-index material layers which are alternately grown, and the high-refractive-index material layers are made of GaAs/AIAs superlattice materials; the low refractive index material layer is an AIAs material.
In an embodiment of the invention, the thickness of the first DBR layer is 640-900 nm.
In an embodiment of the invention, the number of pairs of GaAs/AIAs superlattices in the first distributed Bragg reflector layer is 3, the thickness of GaAs in each pair of GaAs/AIAs superlattices is 100-150 nm, and the thickness of AIAs is 180-300 nm.
In an embodiment of the invention, the thickness of the second distributed Bragg reflector layer is 1280-1800 nm.
In an embodiment of the invention, the number of pairs of GaAs/AIAs superlattices in the second distributed Bragg reflector layer is 6, the thickness of GaAs in each pair of GaAs/AIAs superlattices is 100-150 nm, and the thickness of AIAs is 180-300 nm.
In one embodiment of the invention, the quantum well light-emitting layer is an indium-doped gallium nitride layer, and the thickness of the quantum well light-emitting layer is 200-500 nm.
In one embodiment of the invention, the thickness of the first electron blocking layer is 100-200 nm, and the material of the first electron blocking layer is Alx1InyGa1-x1-yN, wherein, 0<x1≤0.4，0<y≤0.2。
In one embodiment of the invention, the thickness of the second electron blocking layer is 60-100 nm, and the material of the second electron blocking layer is Alx2Ga1-x2N; wherein, 0<x2<0.7。
Compared with the prior art, the invention has the beneficial effects that:
1. the laser adopts GaAs/AIAs superlattice material as the high refractive index material layer and AIAs material as the low refractive index material layer to form the distributed Bragg reflector, so that the laser has simple processing and better monochromaticity, can reduce the process difficulty and is not easy to fall off by replacing the traditional FB resonant cavity.
2. In the DBR reflector, because the GaAs/AIAs superlattice material is introduced, a component transition layer of a heterogeneous interface is omitted, the structural design of a device is simplified, growth parameters are easier to control in the epitaxial growth process, and meanwhile, because the thickness of each superlattice layer and the de-Broglie wavelength of electrons are in the same order of magnitude, the tunnel current formed by a carrier through the tunnel effect is enhanced, so that the DBR reflector can obtain lower series resistance.
3. The first electron barrier layer and the second electron barrier layer are sequentially stacked on the quantum well light emitting layer, so that excess electrons can be effectively prevented from being transited from the quantum well light emitting layer to the p-type semiconductor layer, and the light emitting efficiency of the laser is improved.
Drawings
FIG. 1 is a schematic diagram of a GaAs/AIAs/AIAs Bragg mirror laser of the present invention.
FIG. 2 is a schematic structural diagram of a first DBR layer in a GaAs/AIAs/AIAs Bragg reflector laser of the present invention.
Wherein, 1: a substrate layer; 2. a first distributed Bragg reflector layer; 21. a layer of GaAs/AIAs material; 22. a layer of AIAs material; 3. an n-type Ge semiconductor layer; 4. an n-type Ge doped layer; 5. a quantum well light emitting layer; 6. an electron blocking layer; 61. a first electron blocking layer; 62. a second electron blocking layer; 7. a p-type Ge doped layer; 8. a p-type Ge semiconductor layer; 9. a second distributed Bragg reflector layer.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Referring to FIG. 1, FIG. 1 is a schematic structural diagram of a GaAs/AIAs/AIAs Bragg reflector laser of the present invention. The structure of the GaAs/AIAs/AIAs Bragg reflector laser sequentially comprises the following components from bottom to top: a substrate layer 1; a first distributed bragg mirror layer 2; an n-type Ge semiconductor layer 3; an n-type Ge-doped layer 4; a quantum well light-emitting layer 5; an electron blocking layer 6; a p-type Ge-doped layer 7; a p-type Ge semiconductor layer 8; a second distributed bragg mirror layer 9; wherein the content of the first and second substances,
the material of the substrate layer 1 may be sapphire, silicon carbide, zinc oxide, gallium nitride, aluminum nitride or other materials suitable for crystal epitaxial growth.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a first distributed bragg reflector layer 2 in the GaAs/AIAs bragg reflector laser of the present invention. The first distributed bragg reflector layer 2 comprises high refractive index material layers and low refractive index material layers which are alternately grown, wherein the high refractive index material layers are GaAs/AIAs material layers 21, and GaAs/AIAs is a superlattice material; the low refractive index material layer is an AIAs material layer 22; the thickness of the first distributed Bragg reflector layer 2 is 640-900 nm. The number of pairs of GaAs/AIAs superlattices in the first distributed Bragg reflector layer 2 is 3, the thickness of GaAs in each pair of GaAs/AIAs superlattices is 100-150 nm, and the thickness of AIAs is 180-300 nm.
The thickness of the n-type Ge semiconductor layer 3 is 180-200 nm, and the doping concentration is 3 × 1018～5×1018cm-3The thickness of the n-type Ge doped layer 4 is 180-200 nm, and the doping concentration is 5 × 1017～7×1017cm-3. The doping concentration of the n-type Ge doped layer 4 is slightly lower than that of the first n-type Ge layer, in order to reduce the optical loss due to auger recombination.
The quantum well light-emitting layer 5 is an indium-doped gallium nitride layer, and the thickness of the quantum well light-emitting layer 5 is 200-500 nm.
The electron blocking layer 6 comprises a first electron blocking layer 61 and a second electron blocking layer 62 which are sequentially laminated on the quantum well light-emitting layer 5; the thickness of the first electron blocking layer 61 is 100-200 nm, and the material of the first electron blocking layer 61 is Alx1InyGa1-x1-yN, wherein, 0<x1≤0.4，0<y is less than or equal to 0.2; the thickness of the second electron blocking layer 62 is 60-100 nm, and the material of the second electron blocking layer 62 is Alx2Ga1-x2N; wherein, 0<x2<0.7。
The thickness of the p-type Ge doped layer 7 is 200-220 nm, and the doping concentration is 1 × 1018～3×1018cm-3(ii) a P-type Ge halfThe conductor layer 8 has a thickness of 200-220 nm and a doping concentration of 5 × 1018～3×1019cm-3. The p-type Ge semiconductor layer 8, which has a doping concentration slightly higher than that of the p-type Ge doped layer 7, acts as a buffer layer, reduces the influence of lattice mismatch from the DBR, and provides a large amount of injected holes.
The second distributed Bragg reflector layer 9 comprises high refractive index material layers and low refractive index material layers which are alternately grown, wherein the high refractive index material layers are made of GaAs/AIAs superlattice materials; the low refractive index material layer is an AIAs material. The thickness of the second distributed Bragg reflector layer 9 is 1280-1800 nm. The number of pairs of GaAs/AIAs superlattices in the second distributed Bragg reflector layer 9 is 6, the thickness of each pair of GaAs/AIAs superlattices is 100-150 nm, and the thickness of AIAs is 180-300 nm.
In the DBR reflector, because the GaAs/AIAs superlattice material is introduced, a component transition layer of a heterogeneous interface is omitted, the structural design of a device is simplified, growth parameters are easier to control in the epitaxial growth process, and meanwhile, because the thickness of each superlattice layer and the de-Broglie wavelength of electrons are in the same order of magnitude, the tunnel current formed by a carrier through the tunnel effect is enhanced, so that the DBR reflector can obtain lower series resistance.
In the embodiment of the invention, the electron barrier layer 6 is arranged between the p-type doped layer and the quantum well light-emitting layer 5, wherein the first electron barrier layer 61 is made of Alx1InyGa1-x1-yN, the material of the second electron blocking layer 62 is Alx2Ga1-x2N, since the potential barrier of aluminum is high, the first electron blocking layer 61 and the second electron blocking layer 62 can effectively prevent electrons generated by the N-type Ge semiconductor layer 3 from entering the p-type Ge semiconductor layer 8, thereby preventing non-radiative recombination of electrons and holes in the p-type Ge semiconductor layer 8 and improving the light emitting efficiency of the light emitting diode; the first electron blocking layer 61 and the second electron blocking layer 62 can increase the forbidden bandwidth with the quantum well light-emitting layer 5, so that the limiting effect on electrons can be enhanced, the quantity of the electrons entering the p-type Ge semiconductor layer 8 is further reduced, and the quantity of the electrons entering the p-type Ge semiconductor layer 8 is further improvedThe luminous efficiency is improved.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (8)

1. A GaAs/AIAs bragg mirror laser comprising:
a substrate layer;
the first distributed Bragg reflector layer is arranged on the substrate layer and comprises high-refractive-index material layers and low-refractive-index material layers which are alternately grown, and the high-refractive-index material layers are made of GaAs/AIAs superlattice materials; the low-refractive-index material layer is an AIAs material;
the n-type Ge semiconductor layer is arranged on the first distributed Bragg reflector layer;
the n-type Ge doping layer is arranged on the n-type Ge semiconductor layer;
the quantum well light-emitting layer is arranged on the n-type Ge doping layer;
the electron barrier layer is arranged on the quantum well light-emitting layer; the electron barrier layer comprises a first electron barrier layer and a second electron barrier layer which are sequentially stacked on the quantum well light-emitting layer;
the p-type Ge doping layer is arranged on the quantum well light-emitting layer;
the p-type Ge semiconductor layer is arranged on the p-type Ge doping layer;
the second distributed Bragg reflector layer is arranged on the p-type Ge semiconductor layer and comprises high-refractive-index material layers and low-refractive-index material layers which are alternately grown, and the high-refractive-index material layers are made of GaAs/AIAs superlattice materials; the low refractive index material layer is an AIAs material.
2. GaAs/AIAs/AIAs Bragg reflector laser as claimed in claim 1, characterized in that the thickness of the first distributed Bragg reflector layer is 640-900 nm.
3. A GaAs/AIAs/AIAs Bragg reflector laser as claimed in claim 2, wherein the number of pairs of GaAs/AIAs superlattices in said first distributed Bragg reflector layer is 3, the thickness of GaAs in each pair of GaAs/AIAs superlattices is 100 to 150nm, and the thickness of AIAs is 180 to 300 nm.
4. GaAs/AIAs/AIAs Bragg reflector laser as claimed in claim 3, characterized in that the thickness of the second distributed Bragg reflector layer is 1280 to 1800 nm.
5. A GaAs/AIAs/AIAs Bragg reflector laser as claimed in claim 4, wherein the number of pairs of GaAs/AIAs superlattices in the second distributed Bragg reflector layer is 6, the thickness of GaAs in each pair of GaAs/AIAs superlattices is 100-150 nm, and the thickness of AIAs is 180-300 nm.
6. GaAs/AIAs/AIAs Bragg reflector laser as claimed in claim 5, wherein the quantum well light emitting layer is an indium-doped gallium nitride layer, and the thickness of the quantum well light emitting layer is 200-500 nm.
7. GaAs/AIAs/AIAs Bragg reflector laser as claimed in claim 6, wherein the thickness of the first electron blocking layer is 100 to 200nm, and the material of the first electron blocking layer is Alx1InyGa1-x1-yN, wherein, 0<x1≤0.4，0<y≤0.2。
8. GaAs/AIAs/AIAs Bragg reflector laser as claimed in claim 7, wherein the thickness of the second electron blocking layer is 60 to 100nm, and the material of the second electron blocking layer is Alx2Ga1-x2N; wherein, 0<x2<0.7。
CN201811570737.1A 2018-12-21 2018-12-21 GaAs/AIAs/AIAs Bragg reflector laser Pending CN111355125A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114759105A (en) * 2022-04-01 2022-07-15 广东省大湾区集成电路与系统应用研究院 Manufacturing method of quantum well photodetector and quantum well photodetector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114759105A (en) * 2022-04-01 2022-07-15 广东省大湾区集成电路与系统应用研究院 Manufacturing method of quantum well photodetector and quantum well photodetector
CN114759105B (en) * 2022-04-01 2024-05-07 广东省大湾区集成电路与系统应用研究院 Quantum well photodetector and manufacturing method thereof

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Application publication date: 20200630