CN216529835U - 940nm vertical cavity surface emitting laser epitaxial wafer - Google Patents
940nm vertical cavity surface emitting laser epitaxial wafer Download PDFInfo
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- CN216529835U CN216529835U CN202123078895.5U CN202123078895U CN216529835U CN 216529835 U CN216529835 U CN 216529835U CN 202123078895 U CN202123078895 U CN 202123078895U CN 216529835 U CN216529835 U CN 216529835U
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- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 14
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 12
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 11
- 238000002955 isolation Methods 0.000 claims abstract description 7
- 238000003780 insertion Methods 0.000 claims abstract description 6
- 230000037431 insertion Effects 0.000 claims abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 6
- 239000010980 sapphire Substances 0.000 claims abstract description 6
- 238000005036 potential barrier Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 230000008901 benefit Effects 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
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- 239000012535 impurity Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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Abstract
The utility model belongs to the technical field of lasers, and provides a 940nm vertical-cavity surface-emitting laser epitaxial wafer which comprises a substrate, wherein a buffer layer, a grating layer, an isolation layer, a covering layer, a lower limiting layer, a lower gradient waveguide layer, a multi-quantum well layer, an upper gradient waveguide layer, an upper limiting layer, an upper covering layer and an ohmic contact layer are sequentially arranged on the substrate from bottom to top, the substrate is sapphire, the buffer layer and the covering layer are both GaN, the grating layer is made of InGaAsP and is 20-30 nm thick, the multi-quantum well layer comprises an InGaAs potential well layer and an AlGaAs potential well layer, and a GaAs insertion layer is arranged between the InGaAs potential well layer and the AlGaAs potential well layer. The 940nm vertical cavity surface emitting laser epitaxial wafer has the advantages of reasonable design, simple structure, high reliability and strong lasing capability, is high in utilization rate, and is suitable for large-scale popularization.
Description
Technical Field
The utility model belongs to the technical field of lasers, and particularly relates to a 940nm vertical cavity surface emitting laser epitaxial wafer.
Background
The Vertical Cavity Surface Emitting Laser (VCSEL) is a semiconductor laser which has an optical resonant cavity vertical to a substrate and can realize laser emission on the surface of a chip, and has the advantages of small size, high efficiency, long service life, low cost and the like. In general, a VCSEL is composed of a distributed bragg mirror, a quantum well active region, a spacer layer, an oxide confinement layer, and the like. When the VCSEL works, carriers are injected into a quantum well of an active region, radiation recombination hopping is generated, photons are generated, the photons pass through a resonant cavity with the DBR structure as a cavity mirror to oscillate in a selective mode, and then circular laser beams are emitted in the direction vertical to a substrate. Epitaxial wafer refers to a particular single crystal thin film grown on a substrate that is heated to an appropriate temperature. The 940nm VCSEL has a very wide application prospect, and can be used for gesture detection, gesture recognition, motion capture, environment perception and modeling, laser radar, head tracking, visual safety systems and the like of VR (virtual reality)/AR (augmented reality)/MR (mixed reality).
At present, most epitaxial wafers have high cost, high growth difficulty and high light scattering degree, and the laser quality is influenced; secondly, the existing multi-quantum well layer is basically the combination of a potential well layer and a barrier layer, and indium segregation easily occurs between the potential well layer and the barrier layer, so that the effective quality of electrons is negatively influenced, and the reliability of an epitaxial wafer is further influenced.
SUMMERY OF THE UTILITY MODEL
Aiming at the technical problems of the epitaxial wafer, the utility model provides the 940nm vertical cavity surface emitting laser epitaxial wafer which is reasonable in design, simple in structure, strong in reliability and high in utilization rate.
In order to achieve the purpose, the technical scheme adopted by the utility model is that the 940nm vertical cavity surface emitting laser epitaxial wafer comprises a substrate, wherein a buffer layer, a grating layer, an isolation layer, a covering layer, a lower limiting layer, a lower gradient waveguide layer, a multi-quantum well layer, an upper gradient waveguide layer, an upper limiting layer, an upper covering layer and an ohmic contact layer are sequentially arranged on the substrate from bottom to top, the substrate is sapphire, the buffer layer and the covering layer are both GaN, the grating layer is made of InGaAsP and has the thickness of 20-30 nm, the multi-quantum well layer comprises an InGaAs potential well layer and an AlGaAs potential barrier layer, and a GaAs insertion layer is arranged between the InGaAs potential well layer and the AlGaAs potential barrier layer.
AsPreferably, the InGaAs well layer is 6nm In0.15Ga0.85As, the AlGaAs barrier layer is 8nm Al0.3Ga0.7As, the thickness of the GaAs insert layer is 6 nm.
Preferably, the lower graded waveguide layer and the upper graded waveguide layer are both InAlGaAs and have thicknesses of 20-35 nm respectively.
Compared with the prior art, the utility model has the advantages and positive effects that:
1. the 940nm vertical cavity surface emitting laser epitaxial wafer provided by the utility model takes sapphire as a substrate to grow GaN, and has the advantages of easy acquisition and low cost; the InGaAsP grating layer has the advantages of easy etching and high integrity; the GaAs insertion layer can be used for effectively changing transition between sub-bands of a ground state and a first excited state and changing phonon scattering and effective mass of electrons, and the GaAs material does not contain randomly distributed impurity atoms, so that the band gap is small, the GaAs material is not easily oxidized, and the possibility of carrier scattering in an active region is reduced. The 940nm vertical cavity surface emitting laser epitaxial wafer has the advantages of reasonable design, simple structure, high reliability and strong lasing capability, and is high in utilization rate and suitable for large-scale popularization.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a 940nm vertical cavity surface emitting laser epitaxial wafer according to an embodiment;
in the above figures, 1, a substrate; 2. a buffer layer; 3. a grating layer; 4. an isolation layer; 5. a cover layer; 6. a lower confinement layer; 7. a lower graded waveguide layer; 8. a multiple quantum well layer; 9. an upper graded waveguide layer; 10. an upper confinement layer; 11. an upper cladding layer; 12. and an ohmic contact layer.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, the present invention will be further described with reference to the accompanying drawings and examples. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict. For convenience of description, the words "upper", "lower", "left" and "right" used herein refer to the same directions as the drawings, and do not limit the structure.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and thus the present invention is not limited to the specific embodiments of the present disclosure.
In an embodiment, as shown in fig. 1, the 940nm vertical cavity surface emitting laser epitaxial wafer provided by the utility model comprises a substrate 1, wherein a buffer layer 2, a grating layer 3, an isolation layer 4, a capping layer 5, a lower limiting layer 6, a lower graded waveguide layer 7, a multiple quantum well layer 8, an upper graded waveguide layer 9, an upper limiting layer 10, an upper cladding layer 11 and an ohmic contact layer 12 are sequentially arranged on the substrate 1 from bottom to top, the substrate 1 is sapphire, the buffer layer 2 and the capping layer 5 are both GaN, the grating layer 3 is made of InGaAsP and has a thickness of 20-30 nm, the multiple quantum well layer 8 comprises an InGaAs potential well layer and an AlGaAs potential barrier layer, and a GaAs insertion layer is arranged between the InGaAs layer and the AlGaAs potential barrier layer. Wherein, the lower limiting layer 6 and the upper limiting layer 10 respectively limit the oxidation resistance of the inner layer structure taking the lower limiting layer as the outer layer; the lower graded waveguide layer 7 and the upper graded waveguide layer 9 can ensure that the active region has reasonable refractive index and scattering rate, and can improve the reliability of the product by thinner thickness and smaller optical field loss; the ohmic contact layer 12 does not generate obvious additional impedance and does not cause the balance carrier concentration in the semiconductor to be changed remarkably, so that most of voltage is dropped in an active region but not at a contact surface when the corresponding component is in operation, and the performance index requirement of the laser is met. GaN-based materials, also known as III-nitride materials (including InN, GaN, AlN, InGaN, AlGaN, etc., with forbidden bandwidths in the range of 0.7-6.2eV), have spectra covering the near infrared to deep ultraviolet bands.
Furthermore, the whole GaN substrate is expensive, and the sapphire is used as the substrate 1 to grow GaN on the C surface of the substrate, so that the GaN substrate has the advantages of easy acquisition and low cost; the grating layer 3 of InGaAsP has the advantage of easy etching, and the buffering of the buffer layer 2 and the isolation of the isolation layer 4 can make the grating layer 3 have higher integrity. The GaAs insertion layer can effectively change transition between sub-bands of a ground state and a first excited state and can also change phonon scattering and effective mass of electrons, and the GaAs material does not contain impurity atoms which are randomly distributed, so that the band gap is small, the GaAs material is not easy to oxidize, and the possibility of carrier scattering in an active region is reduced. The 940nm vertical cavity surface emitting laser epitaxial wafer has the advantages of reasonable design, simple structure, high reliability and high lasing capability, and is high in utilization rate.
In order to reduce carrier scattering and increase optical gain, the InGaAs well layer provided by the utility model is In with the thickness of 6nm0.15Ga0.85As, the AlGaAs barrier layer is 8nm Al0.3Ga0.7As, the thickness of the GaAs insert layer is 6 nm. The In composition In the well layer and the well layer thickness had large influence on the lasing wavelength, while 6nm In0.15Ga0.85As can make the gain wavelength move to the long wavelength direction, and then realize the lasing of target wavelength. Moreover, too deep well can weaken the absorption capacity of the quantum well to the pump, reduce the internal quantum efficiency of the laser, generate excessive heat, and when the Al component is more than 0.45, the AlGaAs material is converted into an indirect bandgap semiconductor, so the electro-optic conversion efficiency of the indirect bandgap semiconductor material is low, and the indirect bandgap semiconductor material is not suitable for being used as an optoelectronic device. So 8nm of Al is used0.3Ga0.7As can reduce the Joule heat generated by the self-heating effect and series resistance of the active region of the laser, reduce the scattering of carriers and improve the photon density. The GaAs of 6nm can effectively reduce the scattering loss of the non-uniform interface, and the In of 6nm0.15Ga0.85As and 8nm Al0.3Ga0.7As improves the laser intensity of the product together, thereby satisfying the laserThe target requirements of the application scenario.
Furthermore, the lower gradient waveguide layer 7 and the upper gradient waveguide layer 9 provided by the utility model are all quaternary InAlGaAs, and the thicknesses are respectively 20-35 nm, so that the active region can be fully ensured to have higher refractive index and lower scattering rate, the reliability of the product can be improved by using thinner thickness and smaller optical field loss, and the actual service life of the product can be prolonged to a certain extent.
The above description is only a preferred embodiment of the present invention, and not intended to limit the present invention in other forms, and any person skilled in the art may apply the above modifications or changes to the equivalent embodiments with equivalent changes, without departing from the technical spirit of the present invention, and any simple modification, equivalent change and change made to the above embodiments according to the technical spirit of the present invention still belong to the protection scope of the technical spirit of the present invention.
Claims (3)
1. The 940nm vertical cavity surface emitting laser epitaxial wafer comprises a substrate and is characterized in that a buffer layer, a grating layer, an isolation layer, a covering layer, a lower limiting layer, a lower gradient waveguide layer, a multi-quantum well layer, an upper gradient waveguide layer, an upper limiting layer, an upper covering layer and an ohmic contact layer are sequentially arranged on the substrate from bottom to top, the substrate is sapphire, the buffer layer and the covering layer are both made of GaN, the grating layer is made of InGaAsP and 20-30 nm thick, the multi-quantum well layer comprises an InGaAs potential well layer and an AlGaAs potential barrier layer, and a GaAs insertion layer is arranged between the InGaAs potential well layer and the AlGaAs potential barrier layer.
2. The vertical cavity surface emitting laser epitaxial wafer of claim 1, wherein the InGaAs well layer is 6nm In0.15Ga0.85As, the AlGaAs barrier layer is 8nm Al0.3Ga0.7As, the thickness of the GaAs insert layer is 6 nm.
3. The epitaxial wafer of claim 2, wherein the lower and upper graded waveguide layers are both InAlGaAs and have thicknesses of 20-35 nm, respectively.
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| CN202123078895.5U CN216529835U (en) | 2021-12-09 | 2021-12-09 | 940nm vertical cavity surface emitting laser epitaxial wafer |
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| CN202123078895.5U CN216529835U (en) | 2021-12-09 | 2021-12-09 | 940nm vertical cavity surface emitting laser epitaxial wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115241736A (en) * | 2022-07-26 | 2022-10-25 | 江苏华兴激光科技有限公司 | GaAs-based high-reliability laser chip epitaxial wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115241736A (en) * | 2022-07-26 | 2022-10-25 | 江苏华兴激光科技有限公司 | GaAs-based high-reliability laser chip epitaxial wafer |
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Granted publication date: 20220513 |