CN109671823A - A kind of InP-base quantum dot material structure and the method for extending its emission wavelength - Google Patents
A kind of InP-base quantum dot material structure and the method for extending its emission wavelength Download PDFInfo
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- CN109671823A CN109671823A CN201811500893.0A CN201811500893A CN109671823A CN 109671823 A CN109671823 A CN 109671823A CN 201811500893 A CN201811500893 A CN 201811500893A CN 109671823 A CN109671823 A CN 109671823A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 94
- 239000000463 material Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 28
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 14
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011435 rock Substances 0.000 claims abstract description 13
- 239000002019 doping agent Substances 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 87
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 6
- 230000009977 dual effect Effects 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 4
- 238000004871 chemical beam epitaxy Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 8
- 238000011896 sensitive detection Methods 0.000 abstract description 3
- 229910002058 ternary alloy Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- DLISVFCFLGSHAB-UHFFFAOYSA-N antimony arsenic Chemical compound [As].[Sb] DLISVFCFLGSHAB-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention discloses a kind of InP-base quantum dot material structure and extend the method for its emission wavelength.The material structure includes: the quantum dot active region structure in antimony dopant source, which includes: the soakage layer, quantum dot layer and cap rock grown from bottom to top；It further comprise grown buffer layer, lower limit layer, above-mentioned quantum dot active region structure and upper limiting layer on substrate.Utilize the present invention, mixing antimony atoms under suitable growth conditions can be in conjunction with InAs quantum dot, form InAsSb ternary alloy three-partalloy, effectively shrink energy band band gap, the emission wavelength of InP-base quanta point material is extended, this method has great importance to the preparation of InP-base long wavelength quantum dot light emitting and sensitive detection parts.
Description
Technical field
The present invention relates to photoelectric semiconductor material technical field more particularly to a kind of InP-base quantum dot material structure and expansions
The method for opening up its emission wavelength.
Background technique
The middle infrared lumious material and device of 1-3 mu m waveband are in the side such as communication, gas sensing, photoelectronic warfare, biomedicine
Face, which exists, to be widely applied.Wherein at low cost, device technology is mature, it is integrated etc. to be more suitable for photoelectricity because having for InP-base luminescent material
Many merits and be concerned.Quantum dot light emitting material has due to its unique three-dimensional quantum restriction effect than traditional quantum
The more excellent property of trap luminescent material, for example, high electro-optical efficiency, ultralow threshold value current density, high temperature
Stability, the differential gain of superelevation and high modulation bandwidth etc..Therefore, quantum dot light emitting material is always the heat of international research
Point direction.
Current InP-base quantum dot light emitting material has reached its maturity in 1.3 μm and 1.55 μm wave band development nearby, however by
In the limitation of material band gap and growing technology, the luminous of InP-base quantum dot is difficult to extend to long wavelength.It is adopted in spite of research group
With the pattern of special growing method regulation quantum dot (Dot), quantum short-term (Dash) Lai Zhankuan luminescent spectrum coverage area is formed,
To realize long emission wavelength (1.78 μm), but for extending to longer wavelength, regulated and controled using routine growth means still non-
It is often difficult.
Summary of the invention
(1) technical problems to be solved
The problem that long wave (1.8 μm of >) difficulty is extended to for InP-base quanta point material emission wavelength, the invention discloses
A kind of InP-base quantum dot material structure and the method for extending its emission wavelength, at least partly to solve the above problems.
(2) technical solution
The invention discloses a kind of InP-base quantum dot material structure and extend the method for its emission wavelength, wherein the material
Structure includes: the quantum dot active region structure in antimony dopant source, which includes: the infiltration grown from bottom to top
Layer, quantum dot layer and cap rock.
Further, quantum dot active region structure is single layer, dual stack or dual stack or more.
Further, soakage layer InAs provides the island 3D for Quantum Dots Growth.
Further, quantum dot layer InAs, and antimony dopant source, as active area luminous material layer.
Further, cap rock is InGaAs material.
Further, the material structure further include in InP substrate grown buffer layer, lower limit layer, above-mentioned quantum dot have
Source structure and upper limiting layer.
Further, InP substrate is n-type doping, p-type doping or semi-insulated InP substrate, and buffer layer is InP material, on
Limiting layer and lower limit layer include InGaAs, InGaAsP or InAlAs.
Extension InP-base quantum dot material structure emission wavelength method include:
The grown buffer layer on a substrate；
Lower limit layer is grown on the buffer layer；
The growth quantum point active area structure on lower limit layer, including grow from bottom to top soakage layer, quantum dot layer and
Cap rock, and antimony source is introduced as dopant in quantum dot layer growth course；
Upper limiting layer is grown on quantum dot active region structure.
Further, introducing antimony source as dopant in quantum dot layer growth course includes:
The flow for being passed through antimony is 1-3000sccm, is passed through the time equal to quantum dot layer growth time.
Further, in the method for extending InP-base quantum dot material structure emission wavelength, each layer growing method includes metal
Organic chemical vapor deposition method, molecular beam epitaxy or chemical beam epitaxy.
(3) beneficial effect
InP-base quantum dot material structure provided by the invention is incited somebody to action by mixing antimony atoms during growth quantum point
In its extension for being applied to InP-base quantum dot material structure emission wavelength, the surfactant effect of antimony can regulate and control quantum dot
Pattern broadens luminescent spectrum coverage area；The antimony atoms being incorporated to are capable of forming alloy, effectively shrink energy band band gap, and extension shines
Wavelength.This method has great importance to the preparation of InP-base long wavelength quantum dot light emitting and sensitive detection parts.
Detailed description of the invention
Fig. 1 is the schematic cross-section of InP-base quantum dot light emitting material structure embodiment of the present invention；
Fig. 2 be grown according to structure shown in FIG. 1 the InP-base quanta point material of preparation surface layer quantum dot atomic force it is aobvious
Micro mirror scanning figure；
Fig. 3 is according to structure shown in FIG. 1, using conventional growth method and using the InP of the preparation of method shown in the present invention
Base InAs quanta point material room temperature PL spectrum comparison diagram.
In Fig. 1:
01 buffer layer of substrate, 02 lower limit layer 03
04 quantum dot layer of soakage layer, 05 cap rock 06
07 soakage layer of upper limiting layer, 08 quantum dot layer 09
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in further detail.
It should be noted that similar or identical part all uses identical figure number in attached drawing or specification description.It is attached
The implementation for not being painted or describing in figure is form known to a person of ordinary skill in the art in technical field.In addition, though this
Text can provide the demonstration of the parameter comprising particular value, it is to be understood that parameter is equal to corresponding value without definite, but can connect
It is similar to be worth accordingly in the error margin or design constraint received.In addition, the direction term mentioned in following embodiment, such as
"upper", "lower", "front", "rear", "left", "right" etc. are only the directions with reference to attached drawing.Therefore, the direction term used be for
Illustrate not to limit the present invention.
One embodiment of the invention provides a kind of InP-base quantum dot material structure, please refers to Fig. 1, and structure includes: doping
The quantum dot active region structure in antimony source, the quantum dot active region structure include: the soakage layer grown from bottom to top, quantum dot layer and
Cap rock.
In some embodiments, quantum dot active region structure is single layer, dual stack or dual stack or more.
In some embodiments, soakage layer InAs provides the island 3D for Quantum Dots Growth.
In some embodiments, quantum dot layer InAs, and antimony dopant source, as active area luminous material layer.
In some embodiments, cap rock is InGaAs material.
In some embodiments, which further includes grown buffer layer, lower limit layer, above-mentioned quantum in InP substrate
Point active area structure and upper limiting layer.
In some embodiments, InP substrate is n-type doping, p-type doping or semi-insulated InP substrate, and buffer layer is InP material
Material, upper limiting layer and lower limit layer include InGaAs, InGaAsP or InAlAs.
In the present embodiment, the soakage layer and quantum dot layer in quantum dot active region structure also grown on upper limiting layer,
So as to use atomic force microscope further to carry out going deep into observation to this material structure.
The schematic cross-section of InP-base quantum dot light emitting material structure used in the present invention is given in Fig. 1.It is described below
The implementation process of the method for specific example extension InP-base quantum dot material structure emission wavelength provided by the invention.
Firstly, the grown buffer layer on a substrate；
In the present embodiment, substrate uses N-shaped InP substrate, substrate doping 3E17cm-3, 350 μm of thickness；Buffer layer is adopted
With eigen I nP buffer layer, 645 DEG C of growth temperature, carrier concentration 1E16cm-3, thickness 300nm.
Secondly, growing lower limit layer on the buffer layer；
In the present embodiment, lower limit layer use with the matched InGaAsP lower limit layer of substrate, emission wavelength at 1.1 μm,
645 DEG C of growth temperature, thickness 200nm.
Then, the growth quantum point active area structure on lower limit layer, including soakage layer, the quantum dot grown from bottom to top
Layer and cap rock, and antimony source is introduced as dopant in quantum dot layer growth course；
In some embodiments, introducing antimony source as dopant in quantum dot layer growth course includes:
The flow for being passed through antimony is 1-3000sccm, is passed through the time equal to quantum dot layer growth time；
In the present embodiment, using InAs soakage layer, 500 DEG C of growth temperature, thickness 0.6nm；
Then growth quantum point layer, 500 DEG C of growth temperature, thickness 6.64ML, the flow that antimony is passed through in growth course is
130sccm, being passed through the time is 8s, and the curing time is 20s after Quantum Dots Growth；
One cap rock of regrowth later, quantum dot layer grow In after curing immediately0.53Ga0.47As cap rock, growth temperature
500 DEG C, thickness 10nm；
So far, the preparation of quantum dot active region structure is completed.
Meanwhile the repeatable growth of the quantum dot active region structure, single layer, bilayer or multilayer are stacked, it can be various types of
It is applied in semiconductor quantum dot laser, detector.
Then, upper limiting layer is grown on quantum dot active region structure；
In the present embodiment, using with the matched InGaAsP upper limiting layer of substrate, emission wavelength is at 1.1 μm, growth temperature
645 DEG C, thickness 200nm.
Finally, for convenient for mixing antimony atoms during growth quantum point to proposed by the present invention, and as extension
A kind of Study on Feasibility of method of InP-base quantum dot material structure emission wavelength, the embodiment of the present invention is in above-mentioned material
After the completion of structure fabrication on upper limiting layer continued growth surface layer quantum dot, for atomic force microscope measurement surface topography with into
The analysis of one step；
In the present embodiment, in one InAs soakage layer of upper limiting layer continued growth, 500 DEG C of growth temperature, thickness 0.6nm；With
And a quantum dot layer, 500 DEG C of growth temperature, thickness 6.64ML, being passed through the flow of antimony in growth course is 130sccm, when being passed through
Between be 8s, the curing time is 20s after Quantum Dots Growth.
After the completion of curing, 80 DEG C are cooled under the protection of arsenic antimony atmosphere, the present embodiment, which grows sample, to be completed.
Fig. 2 gives the surface layer quantum dot afm scan figure of the InP-base quanta point material of growth preparation.From figure
In it can be seen that quantum dot pattern obtained effective regulation, due to mixing antimony atoms, the table of antimony during Quantum Dots Growth
Face activating agent effect causes In atom obviously to be accelerated in the migration velocity of [1, -1,0], so as to form quantum short-term.Quantum is short
The intrinsic heterogeneity of line has broadened spectral coverage, is conducive to obtain long emission wavelength.
In order to verify the InP-base quantum dot material structure illumination effect for using the present embodiment growth, in Material growth process
After, the photoluminescence of the InP-base InAs quantum dot sample of Sb doped at room temperature is used by Fourier spectrometer measurement
Spectrum, and the room temperature PL spectrum with the traditional InP-base InAs quantum dot sample not prepared using method provided in the present invention
It compares, as a result as shown in Figure 3.As can be seen from the figure using the hair of the InP-base InAs quantum dot material structure of Sb doped
Optical wavelength has obtained apparent extension, and from 1.6 μm of red shifts to 2 μm, this shows guaranteeing quantum dot material crystals peak position
While quality, the appropriate antimony atoms being incorporated to are capable of forming alloy, effectively shrink energy band band gap, extend shining for quanta point material
Wavelength.This method has great importance to the preparation of InP-base long wavelength quantum dot light emitting and sensitive detection parts.In addition, from Fig. 3
It can also be seen that, spectral width bigger using the InP-base InAs quantum dot material structure luminous intensity of the preparation of method shown in the present invention
Spend wider, this surface density big with quantum dot shown in Fig. 2 and excellent Morphological control are closely bound up.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (10)
1. a kind of InP-base quantum dot material structure characterized by comprising the quantum dot active region structure in antimony dopant source, it is described
Quantum dot active region structure includes: the soakage layer, quantum dot layer and cap rock grown from bottom to top.
2. InP-base quantum dot material structure according to claim 1, which is characterized in that the quantum dot active region structure
More than single layer, dual stack or dual stack.
3. InP-base quantum dot material structure according to claim 1, which is characterized in that the soakage layer is InAs, for amount
Son point growth provides the island 3D.
4. InP-base quantum dot material structure according to claim 1, which is characterized in that the quantum dot layer is InAs, and
Antimony dopant source, as active area luminous material layer.
5. InP-base quantum dot material structure according to claim 1, which is characterized in that the cap rock is InGaAs material.
6. InP-base quantum dot material structure according to claim 1, which is characterized in that further include being grown in InP substrate
Buffer layer, lower limit layer, the quantum dot active region structure and upper limiting layer.
7. InP-base quantum dot material structure according to claim 6, which is characterized in that the InP substrate be n-type doping,
P-type doping or semi-insulated InP substrate, the buffer layer are InP material, and the upper limiting layer and lower limit layer include
InGaAs, InGaAsP or InAlAs.
8. a kind of method for extending InP-base quantum dot material structure emission wavelength characterized by comprising
The grown buffer layer on a substrate；
Lower limit layer is grown on the buffer layer；
The growth quantum point active area structure on lower limit layer, including the soakage layer, quantum dot layer and cap rock grown from bottom to top,
And antimony source is introduced in quantum dot layer growth course as dopant；
Upper limiting layer is grown on quantum dot active region structure.
9. the method for extension InP-base quantum dot material structure emission wavelength according to claim 8, which is characterized in that institute
It states and introduces antimony source in quantum dot layer growth course and as dopant include:
The flow for being passed through antimony is 1-3000sccm, is passed through the time equal to quantum dot layer growth time.
10. the method for extension InP-base quantum dot material structure emission wavelength according to claim 8, which is characterized in that institute
Stating each layer growing method includes metal-organic chemical vapor deposition equipment method, molecular beam epitaxy or chemical beam epitaxy.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070145351A1 (en) * | 2005-12-22 | 2007-06-28 | Fujitsu Limited | Semiconductor device with anisotropy-relaxed quantum dots |
| CN101308888A (en) * | 2007-05-14 | 2008-11-19 | 中国科学院半导体研究所 | Material construction for enhancing optical property and temperature stability of self-organizing quantum point |
| CN101593679A (en) * | 2008-05-30 | 2009-12-02 | 中国科学院物理研究所 | A kind of indium arsenic quanta point material and growing method thereof by GaAs and the modulation of gallium antimonide cover layer |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070145351A1 (en) * | 2005-12-22 | 2007-06-28 | Fujitsu Limited | Semiconductor device with anisotropy-relaxed quantum dots |
| CN101308888A (en) * | 2007-05-14 | 2008-11-19 | 中国科学院半导体研究所 | Material construction for enhancing optical property and temperature stability of self-organizing quantum point |
| CN101593679A (en) * | 2008-05-30 | 2009-12-02 | 中国科学院物理研究所 | A kind of indium arsenic quanta point material and growing method thereof by GaAs and the modulation of gallium antimonide cover layer |
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