CN109616558A - The preparation method of InAsSb quantum dot light emitting material - Google Patents
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- CN109616558A CN109616558A CN201811423181.3A CN201811423181A CN109616558A CN 109616558 A CN109616558 A CN 109616558A CN 201811423181 A CN201811423181 A CN 201811423181A CN 109616558 A CN109616558 A CN 109616558A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 142
- 239000000463 material Substances 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims description 26
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 10
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910005542 GaSb Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 238000004871 chemical beam epitaxy Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 9
- 239000004094 surface-active agent Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 43
- 230000008569 process Effects 0.000 description 10
- 239000002344 surface layer Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 230000005012 migration Effects 0.000 description 5
- 238000013508 migration Methods 0.000 description 5
- 238000012876 topography Methods 0.000 description 5
- 238000000103 photoluminescence spectrum Methods 0.000 description 4
- 239000011435 rock Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- DLISVFCFLGSHAB-UHFFFAOYSA-N antimony arsenic Chemical compound [As].[Sb] DLISVFCFLGSHAB-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002153 concerted effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention provides a kind of preparation methods of InAsSb quantum dot light emitting material, comprising: prepares to have the substrate of drift angle；Grown buffer layer on substrate；Lower limit layer is grown on the buffer layer；One or more InAsSb quantum dot active region is grown on lower limit layer；Upper limiting layer is grown on InAsSb quantum dot active region, alleviate in the prior art since the surfactant effect of Sb easily forms the ropy technical problem of InAsSb quantum dot light emitting caused by quantum short-term, has reached the technical effect for improving InAsSb quantum dot light emitting quality.
Description
Technical field
The present invention relates to photoelectric semiconductor material technical fields, more particularly, to a kind of InAsSb quantum dot light emitting material
Preparation method.
Background technique
The middle infrared lumious material and device of 1-3 mu m waveband are in the side such as communication, gas sensing, photoelectronic warfare and biomedicine
Face, which exists, to be widely applied.Wherein traditional iii-v quantum dot light emitting material, due to its unique three-dimensional quantum restriction effect,
With the property more excellent than Quantum Well luminescent material.Such as InAs quantum dot is in 1.3 μm and 1.55 μm wave band development nearby
It has been reached its maturity that, there is high electro-optical efficiency using the laser of its preparation, ultralow threshold current density is high
The advantages that modulation bandwidth of temperature stability and superelevation.However due to the limitation of material band gap, the luminous of InAs quantum dot is difficult
Extend to long wavelength.InAsSb ternary alloy three-partalloy has minimum forbidden bandwidth (0.106eV), the InAsSb quantum dot of open report
Longest emission wavelength has extended to 2.8 μm.Therefore, because the advantage of its natural long emission wavelength, InAsSb quantum dot material
Material is increasingly becoming the hot spot direction of international research.
Current InAsSb quantum dot is held due to the surfactant effect of Sb in [1, -1,0] direction during the growth process
It is easily elongated, forming quantum short-term (Dash) weakens three-dimensional quantum restriction effect, reduces surface density, to influence its matter that shines
Amount.Special growing method, such as pulse gas injection method are used in spite of research group, interruption method etc. regulates and controls InAsSb amount
The pattern of son point, but these growing method complicated difficult controls, and effect is limited.Therefore using routine growth means to quantum dot pattern
Effective Regulation is carried out, and then improves its luminous mass as urgent problem to be solved.
Summary of the invention
(1) technical problems to be solved
In view of above-mentioned technical problem, the purpose of the present invention is to provide a kind of preparation sides of InAsSb quantum dot light emitting material
Method, it is existing in the prior art since the surfactant effect of Sb easily forms InAsSb amount caused by quantum short-term to alleviate
The technical problem of son point luminous mass difference.
(2) technical solution
In a first aspect, the embodiment of the invention provides a kind of preparation methods of InAsSb quantum dot light emitting material, comprising:
Prepare the substrate with drift angle；
Grown buffer layer over the substrate；
Lower limit layer is grown on the buffer layer；
One or more InAsSb quantum dot active region is grown on the lower limit layer；
Upper limiting layer is grown on the InAsSb quantum dot active region.
With reference to first aspect, the embodiment of the invention provides the first possible embodiments of first aspect, wherein institute
It states substrate and is biased to (110) direction.
With reference to first aspect, the embodiment of the invention provides second of possible embodiments of first aspect, wherein institute
State drift angle value range be (0 °, 10 °].
With reference to first aspect, the embodiment of the invention provides the third possible embodiments of first aspect, wherein institute
Stating substrate is n-type doping, p-type doping or semi-insulated Group III-V compound semiconductor substrate.
With reference to first aspect, the embodiment of the invention provides the 4th kind of possible embodiments of first aspect, wherein institute
Stating substrate is GaAs, InP, GaSb or InAs (001) substrate.
With reference to first aspect, the embodiment of the invention provides the 5th kind of possible embodiments of first aspect, wherein institute
The group for stating the InAsSb quantum dot in InAsSb quantum dot active region is divided into InAs1-xSbx, wherein 0 x≤0.4 <.
With reference to first aspect, the embodiment of the invention provides the 6th kind of possible embodiments of first aspect, wherein institute
The growth temperature for stating the InAsSb quantum dot layer in InAsSb quantum dot active region is 500 DEG C.
With reference to first aspect, the embodiment of the invention provides the 7th kind of possible embodiments of first aspect, wherein institute
The growth thickness for stating InAsSb quantum dot layer is 6.64ML.
With reference to first aspect, the embodiment of the invention provides the 8th kind of possible embodiments of first aspect, wherein institute
Stating the curing time after InAsSb quantum dot layer is grown is 20s.
With reference to first aspect, the embodiment of the invention provides the 9th kind of possible embodiments of first aspect, wherein logical
It crosses metal-organic chemical vapor deposition equipment method, molecular beam epitaxy or chemical beam epitaxy method and prepares the InAsSb quantum dot light emitting
Material.
(3) beneficial effect
It can be seen from the above technical proposal that the preparation method of InAsSb quantum dot light emitting material provided by the invention has
Below the utility model has the advantages that
(1) in the present invention, prepare the substrate (preferred, the substrate can be biased to (110) direction) with drift angle, serving as a contrast
One or more InAsSb quantum dot active region is grown above bottom, the substrate with drift angle is able to suppress InAsSb Quantum Dots Growth
Phosphide atom avoids InAsSb quantum dot from forming quantum during the growth process short in the migration rate in [1, -1,0] direction in the process
Line is effectively improved the surface topography of InAsSb quantum dot, since InAsSb quantum dot becomes dome-shaped quantum by quantum short-term
Point, so, while guaranteeing quantum dot crystalline quality of material, the surface density and uniformity of InAsSb quantum dot are increased, because
This, enhances luminous intensity, effectively improves luminous mass；
(2) in the present invention, since the preparation method of InAsSb quantum dot light emitting material can enhance luminous intensity, effectively change
Kind luminous mass, so, the preparation method of InAsSb quantum dot light emitting material is to preparing the high-power InAsSb quantum dot of Low threshold
Luminescent device has great importance；
(3) in the present invention, prepare the substrate (preferred, the substrate can be biased to (110) direction) with drift angle, serving as a contrast
One or more InAsSb quantum dot active region is grown above bottom, the substrate with drift angle is able to suppress InAsSb Quantum Dots Growth
Phosphide atom avoids InAsSb quantum dot from forming quantum during the growth process short in the migration rate in [1, -1,0] direction in the process
Line is effectively improved the surface topography of InAsSb quantum dot, becomes dome-shaped quantum dot by quantum short-term；
(4) in the present invention, the growth temperature of the InAsSb quantum dot layer in the InAsSb quantum dot active region is 500
DEG C, growth thickness 6.64ML, the curing time after the InAsSb quantum dot layer growth is 20s, these be all by
The growth parameter(s) of optimum experimental is prepared according to the growth parameter(s) Jing Guo optimum experimental in InAsSb quantum dot active region
The luminous efficiency of InAsSb quantum dot can be improved in InAsSb quantum dot layer.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the flow chart of the preparation method of InAsSb quantum dot light emitting material provided in an embodiment of the present invention；
Fig. 2 is to prepare on the substrate provided in an embodiment of the present invention not with drift angle on the substrate with 6 ° of drift angles
InAsSb quantum dot afm scan figure；
Fig. 3 is to prepare on the substrate provided in an embodiment of the present invention not with drift angle on the substrate with 6 ° of drift angles
InAsSb quantum dot room temperature PL spectrum comparison diagram.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with attached drawing to the present invention
Technical solution be clearly and completely described, it is clear that described embodiments are some of the embodiments of the present invention, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall within the protection scope of the present invention.
A kind of preparation method of InAsSb quantum dot light emitting material provided in an embodiment of the present invention, can alleviate the prior art
Present in easily form quantum short-term due to the surfactant effect of Sb caused by InAsSb quantum dot light emitting it is ropy
Technical problem reaches the technical effect for improving InAsSb quantum dot light emitting quality.
To be sent out a kind of InAsSb quantum dot disclosed in the embodiment of the present invention first convenient for understanding the present embodiment
The preparation method of luminescent material describes in detail, as shown in Figure 1, the preparation method of InAsSb quantum dot light emitting material may include
Following steps:
Step S101: prepare to have the substrate of drift angle.
Wherein, it is preferred that the substrate can be biased to (110) direction, the value range of drift angle can for (0 °, 10 °].Institute
Stating substrate can be n-type doping, p-type doping or semi-insulated Group III-V compound semiconductor substrate.The substrate can be
GaAs, InP, GaSb or InAs (001) substrate.
It is illustrated so that drift angle is 6 ° of drift angles as an example.Preferably, in step s101, a N-shaped drift angle InP can be prepared
(001) substrate, substrate are biased to 6 ° of (110) direction, and substrate doping can be 3E18cm-3, substrate thickness can be 350 μm.
Step S102: grown buffer layer over the substrate.
Wherein, it is preferred that in step s 102, eigen I nP buffering can be grown on N-shaped drift angle InP (001) substrate
Layer, the thickness of eigen I nP buffer layer can be 300nm.During growing eigen I nP buffer layer, growth temperature can be
645 DEG C, carrier concentration can be 1E16cm-3。
Step S103: lower limit layer is grown on the buffer layer.
Wherein, it is preferred that in step s 103, one and N-shaped drift angle InP can be grown on eigen I nP buffer layer
(001) the matched InGaAsP lower limit layer of substrate.The emission wavelength of InGaAsP lower limit layer can be at 1.3 μm, growth temperature
Can be at 645 DEG C, the thickness of InGaAsP lower limit layer can be 200nm.
Step S104: one or more InAsSb quantum dot active region is grown on the lower limit layer.
Wherein, the component of the InAsSb quantum dot in the InAsSb quantum dot active region can be InAs1-xSbx,
In, 0 x≤0.4 <.The InAsSb quantum dot active region can stack single layer, bilayer or multilayer with repeated growth.
Wherein, each InAsSb quantum dot active region respectively include: soakage layer, InAsSb quantum dot layer and cap rock.Every
In a InAsSb quantum dot active region, soakage layer is grown first, is then grown InAsSb quantum dot layer, is finally grown cap rock.It is excellent
Choosing, soakage layer can be InGaAs film, and the growth temperature of soakage layer can be 500 DEG C, and the thickness of soakage layer can be
1.4nm.Preferably, the component of InAsSb quantum dot can be InAs0.85Sb0.15.The growth temperature of InAsSb quantum dot layer can be with
It is 500 DEG C.The growth thickness of the InAsSb quantum dot layer can be 6.64ML.After the InAsSb quantum dot layer growth
Curing time can be 20s.Preferably, cap rock can be InGaAsP, and the emission wavelength of cap rock can grow temperature at 1.3 μm
Degree can be 500 DEG C, and thickness can be 10nm.
Wherein, ML is the abbreviation of monolayer, means monoatomic layer, is that Quantum Dots Growth characterizes the logical of thickness in the process
Use unit.The monoatomic layer thickness of different materials is different.Such as InAsSb material, 1ML ≈ 0.31nm.
Step S105: upper limiting layer is grown on the InAsSb quantum dot active region.
Wherein, it is preferred that in step s105, can be grown on the InAsSb quantum dot active region and N-shaped drift angle
The emission wavelength of the matched InGaAsP upper limiting layer of InP (001) substrate, InGaAsP upper limiting layer can grow temperature at 1.3 μm
Degree can be 645 DEG C, and thickness can be 200nm.
In the embodiment of the present invention, for convenient for preparation method proposed by the present invention to the improvement of InAsSb quantum dot pattern into
Row Study on Feasibility, the preparation method of InAsSb quantum dot light emitting material can also include: raw on the upper limiting layer
Long surface layer InAsSb quantum dot.Surface layer InAsSb quantum dot may include: soakage layer and InAsSb quantum dot.
Preferably, the soakage layer in surface layer InAsSb quantum dot can be InGaAs film, and growth temperature can be 500
DEG C, thickness can be 1.4nm.InAsSb quantum dot component in the InAsSb quantum dot of surface layer can be InAs0.85Sb0.15, raw
Long temperature can be 500 DEG C, and thickness can be 6.64ML, after the InAsSb Quantum Dots Growth in the InAsSb quantum dot of surface layer
Curing time can be 20s.After the completion of curing, 80 DEG C are cooled under the protection of arsenic antimony atmosphere.
Wherein, atomic force microscope can measure the table of InAsSb quantum dot light emitting material by surface layer InAsSb quantum dot
Face pattern.
Fig. 2 gives the InAsSb quantum dot prepared on the substrate not with drift angle and on the substrate with 6 ° of drift angles
Afm scan figure.It can be seen from the figure that the InAsSb quantum dot prepared on the substrate not with drift angle,
[1, -1,0] direction is obviously elongated and (compared to [1,1,0] direction), forms the quantum short-term of areal density.Inclined with 6 °
The InAsSb quantum dot prepared on the substrate at angle, pattern dome illustrate that the substrate with drift angle inhibits InAsSb quantum
Phosphide atom is effectively improved the surface topography of InAsSb quantum dot in the migration rate in [1, -1,0] direction in point growth course.Separately
Outside, it compared to the InAsSb quantum dot prepared on the substrate not with drift angle, is prepared on the substrate with 6 ° of drift angles
InAsSb quantum dot also has greatly improvement in surface density and uniformity.
In order to verify the luminous mass of InAsSb quantum dot prepared by method provided in an embodiment of the present invention, in InAsSb amount
After the growth course of son point luminescent material, prepared on the substrate with 6 ° of drift angles by Fourier spectrometer measurement
The PL spectrum of InAsSb quantum dot at room temperature, and with the InAsSb quantum dot that is prepared on the substrate not with drift angle
Room temperature PL spectrum compares, as shown in figure 3, it can be seen from the figure that preparing on the substrate with drift angle
The luminous mass of InAsSb quantum dot obtained apparent improvement, and relative intensity on the substrate not with drift angle compared with preparing
The luminous intensity of InAsSb quantum dot improves about 26 times.This shows to have while guaranteeing quantum dot crystalline quality of material
The substrate of drift angle is capable of increasing the surface density of quantum dot, is effectively improved luminous mass.This method is high-power to Low threshold is prepared
InAsSb quantum dot light emitting device has great importance.In addition, from Fig. 3 it can also be seen that being provided using the embodiment of the present invention
The halfwidth of InAsSb quanta point material PL spectrum of method preparation obviously narrow, this demonstrate implemented using the present invention
The uniformity of the InAsSb quantum dot for the method preparation that example provides increases, with quantum dot pattern uniformity shown in Fig. 2
Improvement is taken concerted action.
Wherein it is possible to pass through metal-organic chemical vapor deposition equipment method, molecular beam epitaxy or chemical beam epitaxy method preparation
The InAsSb quantum dot light emitting material.InAsSb quantum dot light emitting material in the embodiment of the present invention can be various types of half
It is applied in conductor quantum dot laser and detector.
It can be seen from the above technical proposal that the preparation method of InAsSb quantum dot light emitting material provided by the invention has
Below the utility model has the advantages that
(1) in the present invention, prepare the substrate (preferred, the substrate can be biased to (110) direction) with drift angle, serving as a contrast
One or more InAsSb quantum dot active region is grown above bottom, the substrate with drift angle is able to suppress InAsSb Quantum Dots Growth
Phosphide atom avoids InAsSb quantum dot from forming quantum during the growth process short in the migration rate in [1, -1,0] direction in the process
Line is effectively improved the surface topography of InAsSb quantum dot, since InAsSb quantum dot becomes dome-shaped quantum by quantum short-term
Point, so, while guaranteeing quantum dot crystalline quality of material, the surface density and uniformity of InAsSb quantum dot are increased, because
This, enhances luminous intensity, effectively improves luminous mass；
(2) in the present invention, since the preparation method of InAsSb quantum dot light emitting material can enhance luminous intensity, effectively change
Kind luminous mass, so, the preparation method of InAsSb quantum dot light emitting material is to preparing the high-power InAsSb quantum dot of Low threshold
Luminescent device has great importance；
(3) in the present invention, prepare the substrate (preferred, the substrate can be biased to (110) direction) with drift angle, serving as a contrast
One or more InAsSb quantum dot active region is grown above bottom, the substrate with drift angle is able to suppress InAsSb Quantum Dots Growth
Phosphide atom avoids InAsSb quantum dot from forming quantum during the growth process short in the migration rate in [1, -1,0] direction in the process
Line is effectively improved the surface topography of InAsSb quantum dot, becomes dome-shaped quantum dot by quantum short-term；
(4) in the present invention, the growth temperature of the InAsSb quantum dot layer in the InAsSb quantum dot active region is 500
DEG C, growth thickness 6.64ML, the curing time after the InAsSb quantum dot layer growth is 20s, these be all by
The growth parameter(s) of optimum experimental is prepared according to the growth parameter(s) Jing Guo optimum experimental in InAsSb quantum dot active region
The luminous efficiency of InAsSb quantum dot can be improved in InAsSb quantum dot layer.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (10)
1. a kind of preparation method of InAsSb quantum dot light emitting material characterized by comprising
Prepare the substrate with drift angle；
Grown buffer layer over the substrate；
Lower limit layer is grown on the buffer layer；
One or more InAsSb quantum dot active region is grown on the lower limit layer；
Upper limiting layer is grown on the InAsSb quantum dot active region.
2. the preparation method of InAsSb quantum dot light emitting material according to claim 1, which is characterized in that the substrate is inclined
To (110) direction.
3. the preparation method of InAsSb quantum dot light emitting material according to claim 2, which is characterized in that the drift angle
Value range be (0 °, 10 °].
4. the preparation method of InAsSb quantum dot light emitting material according to claim 3, which is characterized in that the substrate is
N-type doping, p-type doping or semi-insulated Group III-V compound semiconductor substrate.
5. the preparation method of InAsSb quantum dot light emitting material according to claim 4, which is characterized in that the substrate is
GaAs, InP, GaSb or InAs (001) substrate.
6. the preparation method of InAsSb quantum dot light emitting material according to claim 5, which is characterized in that the InAsSb
The group of InAsSb quantum dot in quantum dot active region is divided into InAs1-xSbx, wherein 0 x≤0.4 <.
7. the preparation method of InAsSb quantum dot light emitting material according to claim 6, which is characterized in that the InAsSb
The growth temperature of InAsSb quantum dot layer in quantum dot active region is 500 DEG C.
8. the preparation method of InAsSb quantum dot light emitting material according to claim 7, which is characterized in that the InAsSb
The growth thickness of quantum dot layer is 6.64ML.
9. the preparation method of InAsSb quantum dot light emitting material according to claim 8, which is characterized in that the InAsSb
Curing time after quantum dot layer is grown is 20s.
10. the preparation method of InAsSb quantum dot light emitting material according to any one of claim 1 to 9, feature exist
In preparing the InAsSb quantum by metal-organic chemical vapor deposition equipment method, molecular beam epitaxy or chemical beam epitaxy method
Point luminescent material.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1956229A (en) * | 2005-10-27 | 2007-05-02 | 中国科学院半导体研究所 | Meta-GaAs lining double-mould size distributed ImAs quantum point and manufacturing method |
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| CN108470784A (en) * | 2018-03-30 | 2018-08-31 | 华南理工大学 | Improve multi-layer quantum point and preparation on the miscut substrate of quantum dot solar battery efficiency |
-
2018
- 2018-11-26 CN CN201811423181.3A patent/CN109616558A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1956229A (en) * | 2005-10-27 | 2007-05-02 | 中国科学院半导体研究所 | Meta-GaAs lining double-mould size distributed ImAs quantum point and manufacturing method |
| US20070145351A1 (en) * | 2005-12-22 | 2007-06-28 | Fujitsu Limited | Semiconductor device with anisotropy-relaxed quantum dots |
| CN104466679A (en) * | 2014-12-25 | 2015-03-25 | 长春理工大学 | Ultra-low density three-dimensional micro-cavity InAsSb quantum dot structure with controllable position for communication bands |
| CN104810256A (en) * | 2015-04-03 | 2015-07-29 | 华南师范大学 | Developing method for inhibiting In segregation in InAs quantum dot |
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| Title |
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