CN105088181B - A kind of MOCVD preparation methods of si-based quantum dot laser material - Google Patents
A kind of MOCVD preparation methods of si-based quantum dot laser material Download PDFInfo
- Publication number
- CN105088181B CN105088181B CN201410221660.2A CN201410221660A CN105088181B CN 105088181 B CN105088181 B CN 105088181B CN 201410221660 A CN201410221660 A CN 201410221660A CN 105088181 B CN105088181 B CN 105088181B
- Authority
- CN
- China
- Prior art keywords
- mol
- layer
- gaas
- mocvd
- methods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims abstract description 88
- 239000000463 material Substances 0.000 title claims abstract description 87
- 239000002096 quantum dot Substances 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims abstract description 46
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 123
- 238000000034 method Methods 0.000 claims abstract description 86
- 230000012010 growth Effects 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 230000006911 nucleation Effects 0.000 claims abstract description 25
- 238000010899 nucleation Methods 0.000 claims abstract description 25
- 238000004140 cleaning Methods 0.000 claims abstract description 15
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 54
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 42
- 230000004907 flux Effects 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 16
- 238000000137 annealing Methods 0.000 claims description 15
- 238000010792 warming Methods 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 13
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 12
- 238000011065 in-situ storage Methods 0.000 claims description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 9
- 229910000077 silane Inorganic materials 0.000 claims description 9
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 8
- 239000011435 rock Substances 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- -1 arsenic Alkane Chemical class 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000035772 mutation Effects 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 238000000103 photoluminescence spectrum Methods 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- JOTBHEPHROWQDJ-UHFFFAOYSA-N methylgallium Chemical compound [Ga]C JOTBHEPHROWQDJ-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007630 basic procedure Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000004087 circulation Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 230000002631 hypothermal effect Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- XZGYRWKRPFKPFA-UHFFFAOYSA-N methylindium Chemical compound [In]C XZGYRWKRPFKPFA-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The present invention provides a kind of MOCVD preparation methods of si-based quantum dot laser material, prepared by the material for being carried out following steps successively using MOCVD methods, including：GaAs low temperature nucleation layers are made in the monocrystalline substrate of cleaning；GaAs high temperature buffer layers are made on the GaAs low temperature nucleation layers；Strained super lattice structure is made on the GaAs high temperature buffer layers；N-type ohmic contact layer is made in the strained super lattice structure；N-type limiting layer is made on the n-type ohmic contact layer；Lower waveguide layer is made on the n-type limiting layer；Multi-layer quantum point active area is made on the lower waveguide layer；Ducting layer on being made on the multi-layer quantum point active area；P-type limiting layer is made on ducting layer on described；P-type ohmic contact layer is made on the p-type limiting layer.The present invention can large area, uniformly it is quick, complete Material growth and preparation with high reproducibility, cost is cheaper, is more suitable for the demand of industrialization.
Description
Technical field
The present invention relates to semiconductor laser field, more particularly to a kind of si-based quantum dot laser material
MOCVD preparation methods.
Background technology
Microelectronics device based on silicon materials promotes the fast development of modern information technologies always.With data capacity
It is less and less with the requirement more and more higher of transmission rate, the size of silicon device.Thus, the significant challenge that silicon device will face is
Metal interconnects the limitation of (electrical interconnection) speed.Microelectronics and opto-electronic device are combined on silicon optical bench, using photoelectricity
Subset into light network mode, the restriction of electrical interconnection can either be overcome, the maturation process of microelectronic component can be given full play to again
The advantages such as the wide bandwidth of technology and photonic system, fast transmission rate, high noise immunity.
Because the energy band of IV race's material is indirect band gap structure, the laser device using silicon as optical gain material is difficult to realize.
It is suitable for the laser of the single chip integrated silicon substrate electrical pumping (exciting) of photoelectricity at present also without the preferable achievement of acquirement.However, III-
V race's semi-conducting material is generally direct band gap structure, has preferable optical property, it is possible to achieve the height of wide range of wavelengths turns
Efficiency, wide modulation bandwidth, enough Output optical power are changed, has been widely used for various opto-electronic devices.Therefore, silicon substrate integrates
III-V race's semi-conducting material manufacturing opto-electronic device is as one of major programme of optoelectronic intagration.
Due between III-V race's semiconductor and silicon materials nature difference (lattice constant and the big mismatch of thermal coefficient of expansion,
And the reverse farmland problem of polar/non-polar crystal), highdensity misfit dislocation is easily caused, so as to cause device performance to move back
Change and fail, it is difficult to reach practical.In order to solve these problems, traditional main method includes：Low-high temperature two-step method, answer
Become superlattices barrier layer method, thermal annealing method and graph substrate method etc..
Based on the above method, the Quantum well active district Laser Study of GaAs/Si materials is initially carried out.Comparatively,
Because quantum dot active region laser is low to the sensitivity of dislocation, and excitation wavelength can be expanded to optical communication system wavelength
1.3 μm, therefore silicon base III-V group semiconductor laser research at present focuses primarily upon silicon-based quantum dot laser.In the recent period, it is external
Main several seminar achieve impressive progress in the research of silicon base III-V group quantum point laser material.University of Michigan
First using metallorganic chemical vapor deposition (Metal-organic Chemical Vapor DePosition,
MOCVD) method prepares the GaAs/Si epitaxial materials of low-dislocation-density, then using molecular beam epitaxy (Molecular Beam
Epitaxy, MBE) method growth quantum point laser material structure, realize the wide face of room temperature pulse lasing (1% dutycycle)
With the silicon substrate In of ridge structure0.5Ga0.5As/GaAs quantum dot lasers.Its excitation wavelength is 1.02 μm, and threshold current density is
900A/cm2(chamber long 3.6mm, operating temperature 273K), characteristic temperature are 278K (in 5-85 DEG C of temperature range), slope efficiency
For 0.4W/A, small signal modulation 5.5GHz.University College London uses MBE methods, by optimizing on a silicon substrate
GaAs low temperature nucleating conditions, and multicycle InGaAs/GaAs strained super lattice barrier layer method is combined, it is prepared for including 5 layers of InAs/
In0.15Ga0.85The laser material of As quantum dot active region structures, realize the silicon-based quantum dot laser of wide face device architecture
Room temperature pulse lasing (0.01% dutycycle), wavelength be 1.32 μm, threshold current density is reduced to 725A/cm2(chamber is grown
3.0mm, room temperature), characteristic temperature is 44K (in 20-42 DEG C of temperature range).
It is at present to use MBE methods, this method in the preparation method of silicon base III-V group quantum point laser material more
The problem of be that Material growth speed is slow, when preparing thicker GaAs/Si cushioning layer materials, it is necessary to growth time it is oversize,
And preparation process is complicated.
The content of the invention
(1) technical problems to be solved
The present invention provides a kind of MOCVD preparation methods of si-based quantum dot laser material, to solve to lead in the prior art
It is slow to cross preparation speed caused by MBE carries out material preparation, the complicated technical problem of process.
(2) technical scheme
In order to solve the above technical problems, the present invention provides a kind of MOCVD preparation methods of si-based quantum dot laser material,
It is prepared by the material for being carried out following steps successively using MOCVD methods, including：
GaAs low temperature nucleation layers are made in the monocrystalline substrate of cleaning；
GaAs high temperature buffer layers are made on the GaAs low temperature nucleation layers；
Strained super lattice structure is made on the GaAs high temperature buffer layers；
N-type ohmic contact layer is made in the strained super lattice structure；
N-type limiting layer is made on the n-type ohmic contact layer；
Lower waveguide layer is made on the n-type limiting layer；
Multi-layer quantum point active area is made on the lower waveguide layer；
Ducting layer on being made on the multi-layer quantum point active area；
P-type limiting layer is made on ducting layer on described；
P-type ohmic contact layer is made on the p-type limiting layer.
Further, methods described also includes：
Between the strained super lattice structure and the n-type ohmic contact layer, strain insertion is made using MOCVD methods
Layer.
Further,
The crystal face of the monocrystalline substrate is<100>Crystal face, deviation<110>Or<111>4 °~6 ° of crystal face, be Intrinsical or
Low-resistance n-type silicon chip, 350~390 μm of thickness.
Further,
The GaAs low temperature nucleation layers that made in the monocrystalline substrate of cleaning include：It is clear using Wet chemical cleaning method
Clean monocrystalline substrate, then the monocrystalline substrate of cleaning is warming up to 220 DEG C in atmosphere of hydrogen and toasted 30 minutes；Then in hydrogen and
Arsine mixed gas atmosphere is warming up to 750 DEG C and toasted 15 minutes；400~420 DEG C are finally cooled to using MOCVD methods growth 15
~20nm GaAs low temperature nucleation layers, growth source flux are：Trimethyl gallium 2.7 × 10-5Mol/min, arsine 6.7 × 10-3mol/
min；
And/or the GaAs high temperature buffer layers that made on the GaAs low temperature nucleation layers include：Risen first through 10 minutes
Temperature grows 200~400nmGaAs high temperature buffer layers to 610~640 DEG C, using MOCVD methods；Then 670 were warming up to through 6 minutes
~690 DEG C, 1000~1500nm GaAs high temperature buffer layers are grown, in growth course, in hydrogen and arsine mixed gas atmosphere
Carry out 1~3 in-situ heat cycle annealing, the thermal cycle be annealed into from 350 to 750 DEG C between 3~5 thermal cycles annealing.
Further, the strained super lattice structure that made on the GaAs high temperature buffer layers includes：
8~12nmInGaAs/10~the 15nm in 5~10 cycles is grown using MOCVD methods at 680 DEG C~700 DEG C
GaAs superlattice structures, wherein growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, trimethyl indium 1.1 × 10-5mol/
Min, arsine 2.7 × 10-3mol/min。
Further, the preparation method of the strain insert layer also includes：
8~12nmGaAsP/10~15nm the GaAs in 3~6 cycles are grown using MOCVD methods at 680 DEG C~700 DEG C
Superlattice structure, wherein growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 2.7 × 10-3Mol/min, phosphine
2.6×10-3mol/min。
Further,
The n-type ohmic contact layer that made in the strained super lattice structure also includes：It is sharp at 680 DEG C~720 DEG C
The thick n-type Si of 300~500nm are grown with MOCVD methods and adulterate GaAs, and doping concentration is 5 × 1018cm-3~1019cm-3, growth
Source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 6.7 × 10-3Mol/min, silane 4.3 × 10-6mol/min；
And/or the n-type limiting layer that made on the n-type ohmic contact layer includes：Utilized at 700 DEG C~720 DEG C
MOCVD methods grow the thick n-type Si doping AlGaAs of 1300~1800nm, doping concentration 1017cm-3~1018cm-3, growth source
Flow is：Trimethyl gallium 4.0 × 10-5Mol/min, trimethyl aluminium 2.6 × 10-5Mol/min, arsine 6.7 × 10-3Mol/min,
Silane 4.3 × 10-7Mol/min~4.3 × 10-6mol/min；
And/or the lower waveguide layer that made on the n-type limiting layer includes：MOCVD is utilized at 600 DEG C~720 DEG C
Method grows the thick unintentional doping GaAs of 80~100nm, and growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, front three
Base aluminium 8.7 × 10-6Mol/min, arsine 6.7 × 10-3mol/min。
Further, the multi-layer quantum point active area that made on the lower waveguide layer includes：
3~10 layers of quantum-dot structure are made on the lower waveguide layer, every layer of quantum-dot structure includes InAs quantum dots
Layer, GaAs cap rocks and GaAs separation layers, the preparation method of every layer of quantum-dot structure are：
Grow the InAs quantum dots of unintentional doping using MOCVD methods at 480 DEG C~500 DEG C, V/III than for 5~
15, growing source flux is：Trimethyl indium 8.6 × 10-7Mol/min, arsine 4.9 × 10-6mol/min；
The GaAs cap rocks of the MOCVD methods growth unintentional doping of 6~10nm, V/III ratio are utilized at 480 DEG C~500 DEG C
For 50~100, growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 2.7 × 10-3mol/min；
At 580 DEG C~600 DEG C using MOCVD methods growth the unintentional doping of 25~40nm GaAs separation layers, V/III
Than for 50~100, growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 2.7 × 10-3mol/min。
Further,
The ducting layer that made on the multi-layer quantum point active area includes：Utilized at 600 DEG C~700 DEG C
MOCVD methods grow the unintentional doping GaAs of 80~100nm, and growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, three
Aluminium methyl 8.7 × 10-6Mol/min, arsine 6.7 × 10-3mol/min；
And/or the p-type limiting layer that made on described on ducting layer includes：MOCVD is utilized at 700 DEG C~720 DEG C
Method grows 1300~1500nm p-types doping AlGaAs, doping concentration 1017cm-3~1018cm-3, growing source flux is：Three
Methyl gallium 2.6 × 10-5Mol/min, trimethyl indium 5.0 × 10-5Mol/min, arsine 6.7 × 10-3Mol/min, diethyl zinc
9.2×10-7Mol/min~9.2 × 10-6mol/min；
And/or the p-type ohmic contact layer that made on the p-type limiting layer includes：Utilized at 550 DEG C~700 DEG C
MOCVD methods grow 150~300nm p-type heavy doping GaAs, doping concentration 1019cm-3~1020cm-3, grow source flux
For：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 2.7 × 10-3Mol/min, diethyl zinc 3.7 × 10-6mol/min。
Further,
The MOCVD preparation methods of the si-based quantum dot laser material are disposably to complete to make in situ using MOCVD
It is standby.
(3) beneficial effect
It can be seen that in the MOCVD preparation methods of si-based quantum dot laser material provided by the invention, use completely
MOCVD methods carry out material preparation, compared with MBE methods of the prior art, growth rate greatly improves, can large area,
Uniformly, Material growth and preparation are completed with high reproducibility, and cost is cheaper, is more suitable for the demand of industrialization.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are this hairs
Some bright embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can be with root
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the MOCVD preparation method basic procedure schematic diagrames of si-based quantum dot laser material of the embodiment of the present invention；
Fig. 2 is the MOCVD preparation method schematic flow sheets of the si-based quantum dot laser material of the embodiment of the present invention 1；
Fig. 3 is the si-based quantum dot laser material structural representation prepared by the embodiment of the present invention 1；
Fig. 4 is GaAs/Si mutation epitaxial film materials in si-based quantum dot laser material prepared by the embodiment of the present invention 1
The AFM schematic diagram of material；
Fig. 5 is in GaAs/Si mutation epitaxial films in si-based quantum dot laser material prepared by the embodiment of the present invention 1
The AFM schematic diagram of the self-organizing InAs/GaAs quantum dot samples grown on material；
Fig. 6 is self-organizing growth InAs/GaAs quantum on GaAs/Si mutations epitaxial thin film material and GaAs substrates respectively
The photoluminescence spectrum test result comparison diagram of dot laser material sample.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
The embodiment of the present invention provides a kind of MOCVD preparation methods of si-based quantum dot laser material, utilizes MOCVD methods
It is prepared by the material for carrying out following steps successively, referring to Fig. 1, including：
Step 101：GaAs low temperature nucleation layers are made in the monocrystalline substrate of cleaning；
Step 102：GaAs high temperature buffer layers are made on the GaAs low temperature nucleation layers；
Step 103：Strained super lattice structure is made on the GaAs high temperature buffer layers；
Step 104：N-type ohmic contact layer is made in the strained super lattice structure；
Step 105：N-type limiting layer is made on the n-type ohmic contact layer；
Step 106：Lower waveguide layer is made on the n-type limiting layer；
Step 107：Multi-layer quantum point active area is made on the lower waveguide layer；
Step 108：Ducting layer on being made on the multi-layer quantum point active area；
Step 109：P-type limiting layer is made on ducting layer on described；
Step 110：P-type ohmic contact layer is made on the p-type limiting layer.
It can be seen that in the MOCVD preparation methods of si-based quantum dot laser material provided in an embodiment of the present invention, adopt completely
Material preparation is carried out with MOCVD methods, compared with MBE methods of the prior art, growth rate greatly improves, being capable of big face
Product, uniform, completion Material growth and preparation with high reproducibility, cost is cheaper, is more suitable for the demand of industrialization.
Preferably, method can also include：Between the strained super lattice structure and the n-type ohmic contact layer, profit
Strain insert layer is made with MOCVD methods.
Preferably, the crystal face of monocrystalline substrate can be<100>Crystal face, deviation<110>Or<111>4 °~6 ° of crystal face, it is
Intrinsical or low-resistance n-type silicon chip, 350~390 μm of thickness.
Preferably, GaAs low temperature nucleation layers being made in the monocrystalline substrate of cleaning can include：It is clear using wet chemistry
Washing method cleans monocrystalline substrate, then the monocrystalline substrate of cleaning is warming up into 220 DEG C in atmosphere of hydrogen and toasted 30 minutes；Then
750 DEG C are warming up in hydrogen and arsine mixed gas atmosphere to toast 15 minutes；Finally cool to 400~420 DEG C and utilize MOCVD side
Method grows 15~20nm GaAs low temperature nucleation layers, and growth source flux is：Trimethyl gallium 2.7 × 10-5Mol/min, arsine 6.7 ×
10-3mol/min；
Preferably, GaAs high temperature buffer layers being made on GaAs low temperature nucleation layers can include：Heated up first through 10 minutes
To 610~640 DEG C, 200~400nmGaAs high temperature buffer layers are grown using MOCVD methods；Then through be warming up within 6 minutes 670~
690 DEG C, 1000~1500nm GaAs high temperature buffer layers are grown, in the growth course of this layer, can be mixed in hydrogen and arsine
Carry out 1~3 in-situ heat cycle annealing in atmosphere, wherein the mode of thermal cycle annealing is 3 between from 350 to 750 DEG C
~5 circulations.
Preferably, strained super lattice structure being made on GaAs high temperature buffer layers can include：At 680 DEG C~700 DEG C
8~12nmInGaAs/10~15nm GaAs the superlattice structures, wherein growth source in 5~10 cycles is grown using MOCVD methods
Flow is：Trimethyl gallium 4.0 × 10-5Mol/min, trimethyl indium 1.1 × 10-5Mol/min, arsine 2.7 × 10-3mol/min。
Preferably, straining the preparation method of insert layer can also include：Given birth at 680 DEG C~700 DEG C using MOCVD methods
8~12nm GaAsP/10~15nm GaAs superlattice structures in long 3~6 cycles, wherein growth source flux is：Trimethyl gallium
4.0×10-5Mol/min, arsine 2.7 × 10-3Mol/min, phosphine 2.6 × 10-3Mol/min, the P of GaAsP materials therein and
As constituent contents ratio can be adjusted as needed.
Preferably, n-type ohmic contact layer being made in strained super lattice structure can also include：At 680 DEG C~720 DEG C
The thick n-type Si of 300~500nm are grown using MOCVD methods and adulterate GaAs, and doping concentration is 5 × 1018cm-3~1019cm-3, it is raw
Long source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 6.7 × 10-3Mol/min, silane 4.3 × 10-6mol/min；
Preferably, n-type limiting layer being made on n-type ohmic contact layer can include：Utilized at 700 DEG C~720 DEG C
MOCVD methods grow the thick n-type Si doping AlGaAs of 1300~1800nm, doping concentration 1017cm-3~1018cm-3, growth source
Flow is：Trimethyl gallium 4.0 × 10-5Mol/min, trimethyl aluminium 2.6 × 10-5Mol/min, arsine 6.7 × 10-3Mol/min,
Silane 4.3 × 10-7Mol/min~4.3 × 10-6mol/min；
Preferably, lower waveguide layer being made on n-type limiting layer can include：MOCVD side is utilized at 600 DEG C~720 DEG C
Method grows the thick unintentional doping GaAs of 80~100nm, and growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, trimethyl
Aluminium 8.7 × 10-6Mol/min, arsine 6.7 × 10-3mol/min。
Preferably, multi-layer quantum point active area being made on lower waveguide layer can include：3~10 are made on lower waveguide layer
Layer quantum-dot structure, every layer of quantum-dot structure include InAs quantum dot layers, GaAs cap rocks and GaAs separation layers, every layer of quantum dot
The preparation method of structure is：
Grow the InAs quantum dots of unintentional doping using MOCVD methods at 480 DEG C~500 DEG C, V/III than for 5~
15, growing source flux is：Trimethyl indium 8.6 × 10-7Mol/min, arsine 4.9 × 10-6mol/min；
The GaAs cap rocks of the MOCVD methods growth unintentional doping of 6~10nm, V/III ratio are utilized at 480 DEG C~500 DEG C
For 50~100, growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 2.7 × 10-3mol/min；
At 580 DEG C~600 DEG C using MOCVD methods growth the unintentional doping of 25~40nm GaAs separation layers, V/III
Than for 50~100, growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 2.7 × 10-3mol/min。
Preferably, ducting layer being made on multi-layer quantum point active area can include：Utilized at 600 DEG C~700 DEG C
MOCVD methods grow the unintentional doping GaAs of 80~100nm, and growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, three
Aluminium methyl 8.7 × 10-6Mol/min, arsine 6.7 × 10-3mol/min；
Preferably, p-type limiting layer being made on upper ducting layer can include：MOCVD side is utilized at 700 DEG C~720 DEG C
Method grows 1300~1500nm p-types doping AlGaAs, doping concentration 1017cm-3~1018cm-3, growing source flux is：Front three
Base gallium 2.6 × 10-5Mol/min, trimethyl indium 5.0 × 10-5Mol/min, arsine 6.7 × 10-3Mol/min, diethyl zinc 9.2
×10-7Mol/min~9.2 × 10-6mol/min；
Preferably, p-type ohmic contact layer being made on p-type limiting layer can include：Utilized at 550 DEG C~700 DEG C
MOCVD methods grow 150~300nm p-type heavy doping GaAs, doping concentration 1019cm-3~1020cm-3, grow source flux
For：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 2.7 × 10-3Mol/min, diethyl zinc 3.7 × 10-6mol/min。
The MOCVD preparation methods of the si-based quantum dot laser material of the embodiment of the present invention can be in situ using MOCVD
Ground is disposably completed to prepare, and so without material is shifted in cavity, in an atmosphere, is avoided without by material exposure
The pollution of material, simplifies preparation flow.
Embodiment 1：
The embodiment of the present invention 1 provides a kind of metallo-organic compound gas of silicon substrate InAs/GaAs quantum point laser materials
Phase deposition preparation, to describe the specific implementation process of the embodiment of the present invention in detail, referring to Fig. 2, including：
Step 201：GaAs low temperature nucleation layers are made in the monocrystalline substrate of cleaning.
" LP-MOCVD epitaxial growth systems, in MOCVD growth technique processes that the present embodiment uses Thomas Swan3 × 2
In, carrier gas is high-purity hydrogen (99.999%), and III race's organic source is high-purity (99.999%) trimethyl gallium, trimethyl indium, three
Methyl gallium aluminium, V clan source are high-purity (99.999%) arsine, and n-shaped doped source is silane, and p-type doped source is diethyl zinc, reaction
Chamber pressure is 100Torr, and growth temperature and annealing region are 350~750 DEG C, and the material structure finally prepared is shown in Fig. 3.
Wherein substrate 10 is silicon<100>Crystal face is inclined to<110>The Intrinsical monocrystalline silicon buffing sheet of 4 ° of crystal face, can be formed
Diatomic step, suppresses the formation on reverse farmland during silicon substrate GaAs/Si Material growths, and thickness is 350 μm.Silicon chip is used into work
The conventional Wet chemical cleaning method of industry cleans to its surface, removes the pollution such as the grease, organic matter, metal impurities on surface
Thing, the monocrystalline substrate cleaned.
Then " the reaction of LP-MOCVD epitaxial growth systems that the silicon chip after cleaning up is put into Thomas Swan3 × 2
Room, 220 DEG C are first warming up to, toasted 30 minutes (atmosphere of hydrogen), then be warming up to 750 DEG C and toast (hydrogen and arsine mixing in 15 minutes
Atmosphere).Then, about 400~420 DEG C of cryogenic conditions, growth a layer thickness 15nm GaAs low temperature nucleation layers are cooled to
20.GaAs low temperature nucleation layers 20 act as silicon chip surface formed one layer of continuous GaAs thin layer, prevent high growth temperature condition
Under large scale three-dimensional island growth, and discharge the big misfit strain energy of GaAs/Si films.
Step 202：GaAs high temperature buffer layers are made on GaAs low temperature nucleation layers and carry out in-situ annealing.
High temperature buffer layer 30 is the unintentional doping GaAs materials grown at a temperature of 610~690 DEG C, and thickness is about 1300
~1900nm.The high temperature buffer layer is mainly the crystal mass for improving GaAs materials, and improves the table of GaAs films on silicon substrate
Face pattern.Specially：610 DEG C were warming up to through 10 minutes first, grows 300nm GaAs high temperature buffer layers using MOCVD methods；
Then 690 DEG C were warming up to through 6 minutes, 1500nm GaAs high temperature buffer layers are grown, it is necessary to insert in the growth course of this layer
In-situ annealing for several times, general 1~3 time.The in-situ annealing is carried out in hydrogen and arsine mixed gas atmosphere, annealing way be from
Thermal cycle annealing between 350 to 750 DEG C, is circulated 3~5 times.Using this in-situ annealing, GaAs films can be effectively reduced
In main high density threading dislocation, improve crystal mass.
Step 203：Strained super lattice structure is made on GaAs high temperature buffer layers.
Strained super lattice 40 is the 10nm In in 5 cycles0.15Ga0.85As/12nm GaAs compressive strain superlattice structures.Pass through
The stress field action of the strained super lattice, the threading dislocation in GaAs films can further be reduced with stop portions threading dislocation
Density, improve the crystal mass of GaAs/Si films.
The growth temperature of strained super lattice 40 is 680 DEG C, and growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, three
Methyl indium 1.1 × 10-5Mol/min, arsine 2.7 × 10-3mol/min。
Step 204：Strain insert layer is made in strained super lattice structure.
Strain the 10nm GaAs that insert layer 50 was 3 cycles0.9P0.1/ 12nm GaAs tensile strain superlattice structures.By this
The tensile stress effect of strained super lattice, the strain energy of balance compressive strain superlattices 40, so as to which the overall strain of material be reduced or eliminated
Energy.The growth temperature for straining insert layer 50 is 680 DEG C, and growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 2.7
×10-3Mol/min, phosphine 2.6 × 10-3mol/min。
Step 205：N-type ohmic contact layer is made in strain insert layer.
N-type ohmic contact layer 60 is n-type heavy doping GaAs materials, for making the n-type electrode of laser, preparation method
It is：The thick n-type Si doping GaAs of 300nm are grown at 680 DEG C, doping concentration is 5 × 1018cm-3~1019cm-3, grow source stream
Measure and be：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 6.7 × 10-3Mol/min, silane 4.3 × 10-6mol/min。
Step 206：N-type limiting layer is made on n-type ohmic contact layer.
N-type limiting layer 70 is n-type Al0.4Ga0.6As materials, for laser light field to be limited in into active area, it is suitable to be formed
Light field pattern.In the present embodiment, growth temperature is 680 DEG C, mixes Si concentration for 5 × 1018cm-3~1019cm-3, grow source flux
For：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 6.7 × 10-3Mol/min, silane 4.3 × 10-6mol/min。
Step 207：Lower waveguide layer is made on n-type limiting layer.
Lower waveguide layer 80 is the unintentional doping GaAs materials of 100nm, mainly limits laser material jointly with n-type limiting layer
In light field pattern, growth temperature be 720 DEG C, growth source flux be：Trimethyl gallium 4.0 × 10-5Mol/min, trimethyl aluminium 8.7
×10-6Mol/min, arsine 6.7 × 10-3mol/min。
Step 208：Multi-layer quantum point active area is made on lower waveguide layer.
Multi-layer quantum point active area 90 is 3 layers of quantum-dot structure that InAs and GaAs materials are formed, and is unintentional doping,
For providing the lasing gain of laser.Every layer of quantum-dot structure includes InAs quantum dot layers, GaAs cap rocks and GaAs separation layers,
The preparation method of every layer of quantum-dot structure is：
The InAs quantum dots 91 of unintentional doping are grown using MOCVD methods at 480 DEG C DEG C, using traditional self-organizing
Prepared by growing method, V/III than being 5~15, and growth source flux is：Trimethyl indium 8.6 × 10-7Mol/min, arsine 4.9 × 10-6mol/min；
Using the GaAs cap rocks 92 of the MOCVD methods growth unintentional doping of 6nm at 480 DEG C DEG C, V/III than for 50~
100, growing source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 2.7 × 10-3mol/min；
Using the GaAs separation layers 93 of the MOCVD methods growth unintentional doping of 40nm at 600 DEG C, V/III than for 50~
100, growing source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 2.7 × 10-3mol/min。
Step 209：Ducting layer on being made on multi-layer quantum point active area.
Upper ducting layer 100 is the thick unintentional doping GaAs materials of 100nm, mainly limits laser jointly with p-type limiting layer
Light field pattern in equipment material, growth temperature are 600 DEG C, and growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, front three
Base aluminium 8.7 × 10-6Mol/min, arsine 6.7 × 10-3mol/min。
Step 210：P-type limiting layer is made on upper ducting layer.
P-type limiting layer 110 mixes zinc Al for thickness 1300nm's0.4Ga0.6As materials, laser light field is limited in active area,
Suitable light field pattern is formed, growth temperature is 700 DEG C, and zinc doping concentration is 1017cm-3~1018cm-3, growing source flux is：
Trimethyl gallium 2.6 × 10-5Mol/min, trimethyl indium 5.0 × 10-5Mol/min, arsine 6.7 × 10-3Mol/min, diethyl zinc
9.2×10-7Mol/min~9.2 × 10-6mol/min。
Step 211：P-type ohmic contact layer is made on p-type limiting layer.
P-type ohmic contact layer 120 is p-type heavy doping GaAs materials, for making the p-type electrode of laser, growth temperature
For 550 DEG C, zinc doping concentration is 1019cm-3~1020cm-3, growing source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, arsenic
Alkane 2.7 × 10-3Mol/min, diethyl zinc 3.7 × 10-6mol/min。
So far, then the Organometallic for completing silicon substrate InAs/GaAs quantum point laser materials of the embodiment of the present invention closes
Thing gas-phase deposition process for preparing overall process.Material complete growth process in the embodiment of the present invention 1 can utilize MOCVD once complete
Into the AFM test result using the GaAs/Si thin-film materials of Different hypothermia nucleating layer grown in thickness is shown in Fig. 4.Three
Low temperature nucleation layer thickness distribution corresponding to individual sample is (a) 10nm, (b) 15nm, (c) 20nm, in the μ m of 10 μ m 10, table
Surface roughness is less than 4nm.Test result shows, when low temperature nucleation layer thinner thickness or it is thicker when, can all make GaAs/Si film materials
The surface roughness increase of material, and the crystal mass of material can also reduce.Therefore, 15nm low temperature nucleation layer thickness is that we adopt
Optimization thickness parameter.
Fig. 5 is to be tested using the AFM of the InAs/GaAs quantum dot layers of MOCVD device Ad hoc mode growth
As a result.As seen from the figure, InAs quantum dots compare evenly along GaAs layer surfaces atomic stepses distribution, and surface density compared with
Greatly, 10 are reached10~1011/cm2The order of magnitude, the size of quantum dot is also than more uniform, the big cluster of quantum dot of only only a few.With
The InAs quantum dots grown on gaas substrates are compared, and do not have area completely in the InAs quantum dots pattern and quantity of grown above silicon
Not.
Fig. 6 is the self-organizing InAs/GaAs quantum dots in GaAs/Si mutations epitaxial thin film material and GaAs Growns
The photoluminescence spectrum test result comparison diagram of laser material sample.It was found from test result, the InAs/GaAs amounts of grown above silicon
The photocathode of son point more than 50% on GaAs substrates, show the luminosity of quantum dot on silicon chip substantially with GaAs substrates
On quantum dot approach.Further, since the compressive strain of quantum dot is relatively small on silicon chip, and the difference of quantum dot size, because
And the photoluminescence spectrum peak wavelength red shift of its quantum dot is more than 100nm, this is more beneficial for realizing in the application to optical communicating waveband.
It can be seen that the embodiment of the present invention at least has the advantages that：
In the MOCVD preparation methods of si-based quantum dot laser material provided in an embodiment of the present invention, use completely
MOCVD methods carry out material preparation, first obtain crystalline substance using thin low temperature nucleation layer and thick high temperature buffer layer on monocrystalline silicon piece
The higher GaAs/Si thin-film materials of weight, in conjunction with multiple cycle annealing in situ and a kind of two kinds of strained super lattice (compressive strain
With a kind of tensile strain superlattices, realize total strain compensation) reduce silicon substrate GaAs materials dislocation density, obtain high quality
GaAs/Si thin-film materials.Wherein, thick high temperature buffer layer is completed using faster growth rate.Then, for InAs/GaAs
Quantum dot laser active area, completed using the growth conditions of low growth temperature, low growth rate, low V/III ratio；For thickness
Limiting layer is completed using the growth conditions of Seedling height temperature, Seedling height speed, high V/III ratio.Whole InAs/GaAs quantum dots swash
It is strong can to obtain the photoluminescence spectrum close with GaAs substrates by optimization for the growth conditions and process of light device light emitting region material structure
Degree, i.e., excellent quantum dot light emitting performance.The complete growth process of silicon substrate InAs/GaAs quantum point laser materials, it need to only adopt
Once completed with MOCVD methods, compared with MBE methods of the prior art, growth rate greatly improves, can large area,
Even, completion Material growth and preparation with high reproducibility, cost is cheaper, is more suitable for the demand of industrialization.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
The present invention is described in detail with reference to the foregoing embodiments, it will be understood by those within the art that：It still may be used
To be modified to the technical scheme described in foregoing embodiments, or equivalent substitution is carried out to which part technical characteristic；
And these modification or replace, do not make appropriate technical solution essence depart from various embodiments of the present invention technical scheme spirit and
Scope.
Claims (10)
1. a kind of MOCVD preparation methods of si-based quantum dot laser material, it is characterised in that entered successively using MOCVD methods
It is prepared by the material of row following steps, including：
GaAs low temperature nucleation layers are made in the monocrystalline substrate of cleaning；
GaAs high temperature buffer layers are made on the GaAs low temperature nucleation layers；
Strained super lattice structure is made on the GaAs high temperature buffer layers；
N-type ohmic contact layer is made in the strained super lattice structure；
N-type limiting layer is made on the n-type ohmic contact layer；
Lower waveguide layer is made on the n-type limiting layer；
Multi-layer quantum point active area is made on the lower waveguide layer；
Ducting layer on being made on the multi-layer quantum point active area；
P-type limiting layer is made on ducting layer on described；
P-type ohmic contact layer is made on the p-type limiting layer.
2. the MOCVD preparation methods of si-based quantum dot laser material according to claim 1, it is characterised in that described
Method also includes：
Between the strained super lattice structure and the n-type ohmic contact layer, strain insert layer is made using MOCVD methods.
3. the MOCVD preparation methods of si-based quantum dot laser material according to claim 1, it is characterised in that：
The crystal face of the monocrystalline substrate is<100>Crystal face, deviation<110>Or<111>4 °~6 ° of crystal face, it is Intrinsical or low-resistance
N-type silicon chip, 350~390 μm of thickness.
4. the MOCVD preparation methods of si-based quantum dot laser material according to claim 1, it is characterised in that：
The GaAs low temperature nucleation layers that made in the monocrystalline substrate of cleaning include：Cleaned using Wet chemical cleaning method single
Crystalline silicon substrate, then the monocrystalline substrate of cleaning is warming up to 220 DEG C in atmosphere of hydrogen and toasted 30 minutes；Then in hydrogen and arsine
Mixed gas atmosphere is warming up to 750 DEG C and toasted 15 minutes；Finally cool to 400~420 DEG C using MOCVD methods growth 15~
20nm GaAs low temperature nucleation layers, growth source flux are：Trimethyl gallium 2.7 × 10-5Mol/min, arsine 6.7 × 10-3mol/
min；
And/or the GaAs high temperature buffer layers that made on the GaAs low temperature nucleation layers include：It was warming up to first through 10 minutes
610~640 DEG C, grow 200~400nmGaAs high temperature buffer layers using MOCVD methods；Then through be warming up within 6 minutes 670~
690 DEG C, 1000~1500nm GaAs high temperature buffer layers are grown, in growth course, are entered in hydrogen and arsine mixed gas atmosphere
1~3 in-situ heat cycle annealing of row, the thermal cycle be annealed into from 350 to 750 DEG C between 3~5 thermal cycles annealing.
5. the MOCVD preparation methods of si-based quantum dot laser material according to claim 1, it is characterised in that described
Strained super lattice structure is made on the GaAs high temperature buffer layers to be included：
8~12nmInGaAs/10~15nm the GaAs in 5~10 cycles are grown using MOCVD methods at 680 DEG C~700 DEG C to surpass
Lattice structure, wherein growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, trimethyl indium 1.1 × 10-5Mol/min, arsenic
Alkane 2.7 × 10-3mol/min。
6. the MOCVD preparation methods of si-based quantum dot laser material according to claim 2, it is characterised in that described
The preparation method of strain insert layer also includes：
It is super brilliant that the 8~12nmGaAsP/10~15nm GaAs in 3~6 cycles are grown using MOCVD methods at 680 DEG C~700 DEG C
Lattice structure, wherein growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 2.7 × 10-3Mol/min, phosphine 2.6
×10-3mol/min。
7. the MOCVD preparation methods of si-based quantum dot laser material according to claim 1, it is characterised in that：
The n-type ohmic contact layer that made in the strained super lattice structure also includes：Utilized at 680 DEG C~720 DEG C
MOCVD methods grow the thick n-type Si doping GaAs of 300~500nm, and doping concentration is 5 × 1018cm-3~1019cm-3, growth source
Flow is：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 6.7 × 10-3Mol/min, silane 4.3 × 10-6mol/min；
And/or the n-type limiting layer that made on the n-type ohmic contact layer includes：Utilized at 700 DEG C~720 DEG C
MOCVD methods grow the thick n-type Si doping AlGaAs of 1300~1800nm, doping concentration 1017cm-3~1018cm-3, growth source
Flow is：Trimethyl gallium 4.0 × 10-5Mol/min, trimethyl aluminium 2.6 × 10-5Mol/min, arsine 6.7 × 10-3Mol/min,
Silane 4.3 × 10-7Mol/min~4.3 × 10-6mol/min；
And/or the lower waveguide layer that made on the n-type limiting layer includes：MOCVD methods are utilized at 600 DEG C~720 DEG C
The thick unintentional doping GaAs of 80~100nm are grown, growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, trimethyl aluminium
8.7×10-6Mol/min, arsine 6.7 × 10-3mol/min。
8. the MOCVD preparation methods of si-based quantum dot laser material according to claim 1, it is characterised in that described
Multi-layer quantum point active area is made on the lower waveguide layer to be included：
On the lower waveguide layer make 3~10 layers of quantum-dot structure, every layer of quantum-dot structure include InAs quantum dot layers,
GaAs cap rocks and GaAs separation layers, the preparation method of every layer of quantum-dot structure are：
The InAs quantum dots of unintentional doping are grown using MOCVD methods at 480 DEG C~500 DEG C, V/III than being 5~15, raw
Long source flux is：Trimethyl indium 8.6 × 10-7Mol/min, arsine 4.9 × 10-6mol/min；
Using the GaAs cap rocks of the MOCVD methods growth unintentional doping of 6~10nm at 480 DEG C~500 DEG C, V/III than being 50
~100, growing source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 2.7 × 10-3mol/min；
It is using the GaAs separation layers of the MOCVD methods growth unintentional doping of 25~40nm, V/III ratio at 580 DEG C~600 DEG C
50~100, growing source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 2.7 × 10-3mol/min。
9. the MOCVD preparation methods of si-based quantum dot laser material according to claim 1, it is characterised in that：
The ducting layer that made on the multi-layer quantum point active area includes：MOCVD side is utilized at 600 DEG C~700 DEG C
Method grows the unintentional doping GaAs of 80~100nm, and growth source flux is：Trimethyl gallium 4.0 × 10-5Mol/min, trimethyl aluminium
8.7×10-6Mol/min, arsine 6.7 × 10-3mol/min；
And/or the p-type limiting layer that made on described on ducting layer includes：MOCVD methods are utilized at 700 DEG C~720 DEG C
Grow 1300~1500nm p-types doping AlGaAs, doping concentration 1017cm-3~1018cm-3, growing source flux is：Trimethyl
Gallium 2.6 × 10-5Mol/min, trimethyl indium 5.0 × 10-5Mol/min, arsine 6.7 × 10-3Mol/min, diethyl zinc 9.2 ×
10-7Mol/min~9.2 × 10-6mol/min；
And/or the p-type ohmic contact layer that made on the p-type limiting layer includes：Utilized at 550 DEG C~700 DEG C
MOCVD methods grow 150~300nm p-type heavy doping GaAs, doping concentration 1019cm-3~1020cm-3, grow source flux
For：Trimethyl gallium 4.0 × 10-5Mol/min, arsine 2.7 × 10-3Mol/min, diethyl zinc 3.7 × 10-6mol/min。
10. the MOCVD preparation methods of si-based quantum dot laser material according to any one of claim 1 to 9, it is special
Sign is：
The MOCVD preparation methods of the si-based quantum dot laser material are disposably to complete to prepare in situ using MOCVD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410221660.2A CN105088181B (en) | 2014-05-23 | 2014-05-23 | A kind of MOCVD preparation methods of si-based quantum dot laser material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410221660.2A CN105088181B (en) | 2014-05-23 | 2014-05-23 | A kind of MOCVD preparation methods of si-based quantum dot laser material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105088181A CN105088181A (en) | 2015-11-25 |
| CN105088181B true CN105088181B (en) | 2017-11-28 |
Family
ID=54569492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410221660.2A Expired - Fee Related CN105088181B (en) | 2014-05-23 | 2014-05-23 | A kind of MOCVD preparation methods of si-based quantum dot laser material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105088181B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105869993A (en) * | 2016-04-07 | 2016-08-17 | 华北科技学院 | Growth method capable of restraining In segregation in InAs quantum dots |
| CN106480498B (en) * | 2016-10-12 | 2019-05-17 | 北京邮电大学 | A kind of nano graph substrate side epitaxial silicon based quantum dot laser equipment material and preparation method thereof |
| CN107645123B (en) * | 2017-09-27 | 2020-02-18 | 华东师范大学 | Active region structure design of multi-wavelength GaN-based vertical cavity surface emitting laser |
| CN108376640A (en) * | 2018-01-09 | 2018-08-07 | 北京邮电大学 | The preparation method of InGaAs/Si epitaxial materials |
| CN108418095B (en) * | 2018-02-06 | 2019-08-06 | 北京邮电大学 | The epitaxial material preparation method of electrical pumping long wavelength's silicon-based nano laser array |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1372360A (en) * | 2001-02-26 | 2002-10-02 | 中国科学院半导体研究所 | 1.3 micrometer In GaAs/GaAs self-organized quantum point laser material andm ethod for growing said material |
| CN101685774A (en) * | 2008-09-24 | 2010-03-31 | 北京邮电大学 | Heteroepitaxial growth process based on interface nano-structure |
| CN102570309A (en) * | 2012-02-14 | 2012-07-11 | 中国科学院半导体研究所 | Preparation method for silica-based 850nm laser with active area grown in selected area |
| CN103151710A (en) * | 2011-12-06 | 2013-06-12 | 北京邮电大学 | Gallium arsenide (GaAs) base high-strain quantum well containing boron (B) and preparation method thereof and semiconductor laser unit |
| CN103199438A (en) * | 2012-01-04 | 2013-07-10 | 北京邮电大学 | GaAs base multi-layer self-organizing quantum dot structure and preparation method thereof |
-
2014
- 2014-05-23 CN CN201410221660.2A patent/CN105088181B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1372360A (en) * | 2001-02-26 | 2002-10-02 | 中国科学院半导体研究所 | 1.3 micrometer In GaAs/GaAs self-organized quantum point laser material andm ethod for growing said material |
| CN101685774A (en) * | 2008-09-24 | 2010-03-31 | 北京邮电大学 | Heteroepitaxial growth process based on interface nano-structure |
| CN103151710A (en) * | 2011-12-06 | 2013-06-12 | 北京邮电大学 | Gallium arsenide (GaAs) base high-strain quantum well containing boron (B) and preparation method thereof and semiconductor laser unit |
| CN103199438A (en) * | 2012-01-04 | 2013-07-10 | 北京邮电大学 | GaAs base multi-layer self-organizing quantum dot structure and preparation method thereof |
| CN102570309A (en) * | 2012-02-14 | 2012-07-11 | 中国科学院半导体研究所 | Preparation method for silica-based 850nm laser with active area grown in selected area |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105088181A (en) | 2015-11-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105088181B (en) | A kind of MOCVD preparation methods of si-based quantum dot laser material | |
| Høiaas et al. | GaN/AlGaN nanocolumn ultraviolet light-emitting diode using double-layer graphene as substrate and transparent electrode | |
| CN105448675B (en) | A kind of MOCVD preparation methods of GaAs/Si epitaxial materials | |
| Tukiainen et al. | High‐efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE‐MOCVD technique | |
| WO2008088320A1 (en) | Zno nanostructure-based light emitting device | |
| CN106480498B (en) | A kind of nano graph substrate side epitaxial silicon based quantum dot laser equipment material and preparation method thereof | |
| US20110062466A1 (en) | AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs | |
| CN111628410A (en) | 1.55-micron wavelength silicon-based quantum dot laser epitaxial material and preparation method thereof | |
| CN108418095B (en) | The epitaxial material preparation method of electrical pumping long wavelength's silicon-based nano laser array | |
| JP2010225870A (en) | Semiconductor element | |
| Zhao et al. | Boron-doped III–V semiconductors for Si-based optoelectronic devices | |
| CN103477449A (en) | Light receiving element and method for manufacturing same | |
| CN105122473A (en) | Optoelectronic semiconductor chip and method for the production thereof | |
| Yusof et al. | The dependence of indium incorporation on specified temperatures in growing InGaN/GaN heterostructure using MOCVD technique | |
| Tang et al. | Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers | |
| US8222988B2 (en) | Porous device for optical and electronic applications and method of fabricating the porous device | |
| He et al. | Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer | |
| CN105986321B (en) | In the method for Ge Grown GaAs epitaxial films | |
| JP2014531758A (en) | Variable band gap solar cell | |
| CN101359805A (en) | Growing method for epitaxial wafer of 780nm-850nm non-aluminum laser | |
| Wu et al. | Growth, fabrication, and characterization of InGaAsN double heterojunction solar cells | |
| Nguyen | Sillicon photonics based on monolithic integration of III-V nanostructures on silicon | |
| Kaiander | MOCVD growth of InGaAs/GaAs QDs for long wavelength lasers and VCSELs | |
| US8653500B1 (en) | Volume-scalable high-brightness three-dimensional visible light source | |
| Yusof et al. | The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171128 |