CN104332537B - A kind of light emitting diode epitaxial structure of high concentration Te doping - Google Patents
A kind of light emitting diode epitaxial structure of high concentration Te doping Download PDFInfo
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- CN104332537B CN104332537B CN201410551529.2A CN201410551529A CN104332537B CN 104332537 B CN104332537 B CN 104332537B CN 201410551529 A CN201410551529 A CN 201410551529A CN 104332537 B CN104332537 B CN 104332537B
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- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000007797 corrosion Effects 0.000 claims abstract description 12
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- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 47
- 150000001875 compounds Chemical class 0.000 claims description 21
- 239000000470 constituent Substances 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 9
- 230000009467 reduction Effects 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 13
- 238000010521 absorption reaction Methods 0.000 abstract description 2
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- 239000002131 composite material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
- H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
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Abstract
The present invention discloses a kind of light emitting diode epitaxial structure of high concentration Te doping, forms cushion, corrosion barrier layer, roughened layer, the first type current extending, the first type limiting layer, active layer, Second-Type limiting layer and Second-Type current extending respectively on substrate；Active layer side sets the first type current extending, and opposite side sets Second-Type current extending；Active layer and the first type current extending set the first type limiting layer, and active layer sets Second-Type limiting layer with Second-Type current extending；First type current extending is set to n-layer structure, and superlattices, and the first type current extending doping Te are set between each Rotating fields.The present invention can reduce absorption of the impurity to short-wavelength light, effectively improve the luminous efficiency of light emitting diode.
Description
Technical field
The present invention relates to LED technology field, a kind of LED epitaxial of high concentration Te doping is referred in particular to
Structure.
Background technology
Light emitting diode has low-power consumption, size small and high reliability, has been widely used, however, existing skill
In art, the preferable light emitting diode requirement of, luminous efficiency higher to brightness is improved.Given birth to using Metal Organic Vapor extension
Epitaxial structure with SQW long can obtain internal quantum efficiency higher；And use metallic mirror and surface coarsening etc. to be inverted
The chip manufacture method of structure, it will be apparent that the external quantum efficiency of lifting light emitting diode.
However, the first conductivity type for being placed in active layer bottom can be caused to be inverted to the top of active layer using chip structure is inverted
Portion.Si elements are typically used as doped source for the first type current extending of conventional light emitting diodes structure, and are sending out short
In the light emitting diode of wavelength light, Si impurity shows and absorbs the light that part active layer sends, the Si impurity being placed on active layer
Extinction effect becomes apparent from.
Replacing Si elements to be adulterated as the first type current extending using Te elements can improve the extinction of impurity, effectively improve
The external quantum efficiency of light emitting diode.It is miscellaneous in epitaxial process Te but Te elements are limited to the Wuli-Shili-Renli system approach of itself
In the case that matter intake is big, easily cause epitaxial layer poor crystal quality.And Te impurity intakes are small, there is current expansion effect
Really poor problem.In view of this, the present invention proposes a kind of incorporation efficiency of raising Te impurity to overcome the defect, can carry again
Thus the epitaxial structure and growing method of epitaxial crystal quality high, this case produce.
The content of the invention
It is an object of the invention to provide a kind of light emitting diode epitaxial structure of high concentration Te doping, to reduce impurity pair
The absorption of short-wavelength light, effectively improves the luminous efficiency of light emitting diode.
To reach above-mentioned purpose, solution of the invention is：
A kind of light emitting diode epitaxial structure of high concentration Te doping, forms cushion, corrosion and stops respectively on substrate
Layer, roughened layer, the first type current extending, the first type limiting layer, active layer, Second-Type limiting layer and Second-Type current expansion
Layer；Active layer side sets the first type current extending, and opposite side sets Second-Type current extending；Active layer and the first type electricity
Stream extension layer sets the first type limiting layer, and active layer sets Second-Type limiting layer with Second-Type current extending；First type electricity
Stream extension layer is set to n-layer structure, and superlattices, and the first type current extending doping Te are set between each Rotating fields.
Further, the first type current extending is set to n-layer structure, and its n is 4-10.
Further, superlattices are alternately made up of two kinds of different materials, and its alternate logarithm is 3-8 pairs.
Further, the constituent material of superlattices include AlGaInP, AlGaAs, AlGaInAs, GaAs, GaN, AlGaN,
AlGaInN。
Further, the n-layer structure of the first type current extending includes being made up of the III-V compound of different Al components；Bag
Include and be made up of the III-V compound of identical Al components, and adjacent Rotating fields are made up of the different material of Al components.
Further, the Al change of component trend of the n-layer structural material of the first type current extending includes successively decreasing, along active layer
The Al change of component trend in epitaxial growth direction is reduction.
Further, the n-layer layers thickness of the first type current extending is 0.5-2 μm.
Further, the n-layer layers thickness changing trend of the first type current extending includes successively decreasing, along active layer extension
The thickness changing trend of the direction of growth is reduction.
Further, the constituent material of two groups of materials of alternating composition superlattices, the first type current extending adjacent with both sides
It is identical, and the material layer of the first adjacent with both sides in structure type current extending mutually staggers.Assume superlattices by handing over
For (the Al of growth0.43Ga0.57)0.5In0.5P/(Al0.47Ga0.53)0.5In0.5The material layer of P is constituted, then with (Al0.43Ga0.57)0.5In0.5The material layer of the first adjacent type current extending of P material layers is (Al0.47Ga0.53)0.5In0.5P, and with
(Al0.47Ga0.53)0.5In0.5The material layer of the first adjacent type current extending of P material layers is (Al0.43Ga0.57)0.5In0.5P,
Alternate and stagger.
A kind of LED epitaxial method of high concentration Te doping, comprises the following steps：
Step one, form cushion, corrosion barrier layer, roughened layer respectively on substrate, terminate in roughened layer epitaxial growth
Preceding reduction growth temperature；
Step 2, on roughened layer the first type of extension current extending the first Rotating fields；
Step 3, in first the first Rotating fields of type current extending first group of superlattices of Epitaxial growth；
Step 4, in first group of superlattices Epitaxial growth the first type second Rotating fields of current extending；
The structure of step 5, repeat step three, four, until expanding in (n-1)th group of the first type of superlattices Epitaxial growth electric current
Exhibition layer n-th layer structure；
Step 6, after the first type current extending n-th layer structure growth terminates, pause and improve chamber pressure and plus
Big carrier gas flux, and improve epitaxial growth temperature；
Step 7, in the first type current extending n-th layer structure then the first type of epitaxial growth limiting layer, active layer,
Second-Type limiting layer, Second-Type current extending.
Further, growth temperature is reduced before roughened layer epitaxial growth terminates, the scope 10-50 of epitaxial growth temperature is reduced
℃。
Further, being grown to and given birth to without pausing between layers of the n groups structure sheaf of the first current extending and superlattices
It is long.
Further, after the first type current extending n-th layer structure growth terminates, the time range of pause is 15-80 seconds.
Further, after the first type current extending n-th layer structure growth terminates, the scope of epitaxial growth temperature is improved
10-80℃。
Further, after the first type current extending n-th layer structure growth terminates, the scope 10- of chamber pressure is improved
80mbar。
Further, after the first type current extending n-th layer structure growth terminates, the scope 1000- of carrier gas flux is increased
3000sccm。
After such scheme, the present invention is set to n-layer structure by the first type current extending, is set between Rotating fields
Put superlattices, the first type current extending doping Te.Te impurity is improve in the incorporation efficiency of the first type current extending and is changed
Kind crystal mass.The first type current extending crystal mass in the case where substantial amounts of Te impurity doping is passed through is solved drastically to dislike
The problem of change, so as to obtain epitaxial crystal quality higher.First type current extending doping Te, reduces the extinction of impurity,
It is effectively improved the luminous efficiency of light emitting diode.
The n-layer structure of the first type current extending is made up of the different III-V compound of Al components, or by Al
Component identical III-V compound is constituted；And adjacent Rotating fields are made up of the different material of Al components.Adjacent Rotating fields are used
Different composition materials, for follow-up superlattices use with adjacent Rotating fields identical material alternating growth, reduce superlattices to the
One type current extending extends the influence of effect.
The Al change of component trend of the n-layer structural material of the first type current extending includes successively decreasing, and is given birth to along active layer extension
The Al change of component trend of length direction is reduction.Be conducive to improving the expansion of the first type current extending using the Al change of component trend
Exhibition effect, increases the current expansion ability of the first type current extending bottom.
The n-layer structure of the first type current extending is 0.5-2 μm per a layer thickness, and thickness is less than 0.5 μm, weakens this layer knot
The current expansion effect of structure；, more than 2 μm, the partially thick Te element aggregations amount in top layer that can cause to suspend of thickness is excessive, leads for thickness
Crystal mass is caused drastically to deteriorate.
The each layer thickness variation trend of n-layer structure of the first type current extending includes successively decreasing, along active layer epitaxially grown
The thickness changing trend in direction is reduction.Using the variation tendency of growth thickness more and more thinner, be conducive to timely by superlattices
Ground improves the crystal mass of the first type current extending, improves the incorporation efficiency of Te elements, prevents later stage the first type current expansion
Layer growing surface suspends excessive Te elements and causes crystal mass drastically to deteriorate.
Two groups of materials of material layer of superlattices alternating growth are constituted with the Rotating fields of the first adjacent type current extending
Material is identical, and the material of two groups of material layers of superlattices alternating growth is different, i.e., replaced by two groups of material layers of alternating growth
Constitute.But the material of the superlattices first type current extending Rotating fields adjacent with both sides is offset from each other, ground floor superlattices,
Last layer of superlattices are different from the material of the first current extending Rotating fields adjacent thereto.
Growth temperature is reduced before roughened layer epitaxial growth terminates, epitaxial growth temperature is reduced and is conducive to being incorporated to for Te, subtracted
The suspension and effusion of few Te.N groups constitute structure sheaf and the superlattices of the first current extending between layers be grown to nothing
Pause growth.Because each layer growth of n groups the first current extending of composition is thicker, different material layer is conducive to using without pause growth
Obtain preferable interface crystal mass.After first type current extending n-th layer structure growth terminates, the time range of pause takes
15-80 seconds, the scope 10-80mbar of chamber pressure is improved, increase the scope 1000-3000sccm of carrier gas flux, these
The management and control of growth course and the adjustment of growth parameter(s) be conducive to removal reative cell in Te atmosphere and increase epi-layer surface Te's and
Enter, reduce Te to following epitaxial growth and the influence of epi-layer surface.In the first type current extending n-th layer structure growth knot
Shu Hou, improves 10-80 DEG C of the scope of epitaxial growth temperature.Influence of the later stage to the doping concentration of Second-Type impurity is reduced, favorably
In the luminous efficiency for improving light emitting diode.
Brief description of the drawings
Fig. 1 is epitaxial structure schematic diagram of the invention；
Fig. 2 is the structural representation of the first type current extending of the invention；
Fig. 3 is growth temperature gradient map of the invention；
Fig. 4 is LED chip construction schematic diagram of the invention.
Label declaration
The cushion 2 of substrate 1
The roughened layer 4 of corrosion barrier layer 3
The Rotating fields 51 of first type current extending 5 first
The third layer structure 53 of second Rotating fields 52
54 first groups of superlattices 551 of four-layer structure
The 3rd group of superlattices 553 of second group of superlattices 552
The active layer 7 of first type limiting layer 6
The Second-Type current extending 9 of Second-Type limiting layer 8
The silicon substrate 11 of metallic mirror 10
The central electrode 13 of expansion electrode 12
Back electrode 14.
Specific embodiment
The present invention is described in detail below in conjunction with drawings and the specific embodiments.
Refering to a kind of light emitting diode epitaxial structure of high concentration Te doping that shown in Fig. 1, the present invention is disclosed, in substrate 1
It is upper to form cushion 2, corrosion barrier layer 3, roughened layer 4, the first type current extending 5, the first type limiting layer 6, active layer respectively
7th, Second-Type limiting layer 8, Second-Type current extending 9.Wherein, the first type current extending 5 is by 4 Rotating fields and is sandwiched in Rotating fields
Between superlattices composition.
Wherein, substrate 1 uses GaAs substrates, and thickness is 270 μm.The constituent material of cushion 2 uses GaAs III-Vs
Compound, the thickness of cushion 2 is 600nm.Corrosion barrier layer 3 is made up of two parts, and the constituent material of its each several part is used
(Al0.5Ga0.5)0.5In0.5P, GaAs III-V compound.(the Al of corrosion barrier layer 30.5Ga0.5)0.5In0.5P thickness is 300nm；
The GaAs thickness of corrosion barrier layer 3 is 100nm.The constituent material of roughened layer 4 uses (Al0.7Ga0.3)0.5In0.5P III-V chemical combination
Thing, the thickness of roughened layer 4 is 2.5 μm.
As shown in Fig. 2 the first type current extending 5 is made up of 4 Rotating fields, the Rotating fields of the first type current extending 5 first
51 constituent material uses (Al0.47Ga0.53)0.5In0.5P III-V compounds, and thickness is 1.5 μm.First type current extending
The constituent material of 5 second Rotating fields 52 uses (Al0.43Ga0.57)0.5In0.5P III-V compounds, and thickness is 1.2 μm.First
The constituent material of the third layer structure 53 of type current extending 5 uses (Al0.39Ga0.61)0.5In0.5P III-V compounds, and thickness
It is 1 μm.The constituent material of the four-layer structure 54 of the first type current extending 5 uses (Al0.35Ga0.65)0.5In0.5P III-V chemical combination
Thing, and thickness is 0.8 μm.
As shown in Fig. 2 super across first group between the Rotating fields 51 of the first type current extending 5 first and the second Rotating fields 52
Lattice 551, first group of superlattices 551 is by 5 groups of (Al of alternating growth0.43Ga0.57)0.5In0.5P/(Al0.47Ga0.53)0.5In0.5P
Material layer constitute, every layer of (Al0.43Ga0.57)0.5In0.5P、(Al0.47Ga0.53)0.5In0.5The thickness of P material layers is 3nm.Wherein
The first group material layer of superlattices 551 adjacent with the Rotating fields 51 of the first type current extending 5 first is (Al0.43Ga0.57)0.5In0.5P III-V compounds, wherein the first group superlattices 551 adjacent with the Rotating fields 52 of the first type current extending 5 second
Material layer be (Al0.47Ga0.53)0.5In0.5P III-V compounds.
Across second group of superlattices 552 between the Rotating fields 52 of first type current extending 5 second and third layer structure 53, the
Two groups of superlattices 552 are by 5 groups of (Al of alternating growth0.39Ga0.61)0.5In0.5P /(Al0.43Ga0.57)0.5In0.5P material layer structures
Into every layer of (Al0.39Ga0.61)0.5In0.5P 、(Al0.43Ga0.57)0.5In0.5Thickness is 3nm.Wherein with the first type current extending
First group of adjacent material layer of superlattices 552 of 5 second Rotating fields 52 is (Al0.39Ga0.61)0.5In0.5P III-V compounds, its
In the second group material layer of superlattices 552 adjacent with the third layer structure 53 of the first type current extending 5 be (Al0.43Ga0.57)0.5In0.5III-V compound.
Across the 3rd group of superlattices 553 between the third layer structure 53 of first type current extending 5 and four-layer structure 54, the
Three groups of superlattices 553 are by 5 groups of (Al of alternating growth0.35Ga0.65)0.5In0.5P/(Al0.39Ga0.61)0.5In0.5P material layers are constituted,
Every layer of (Al0.35Ga0.65)0.5In0.5P、(Al0.39Ga0.61)0.5In0.5P thickness is 3nm.Wherein with the first type current extending 5
The 3rd group of adjacent material layer of superlattices 553 of three-decker 53 is (Al0.35Ga0.65)0.5In0.5P III-V compounds, wherein
The three group material layer of superlattices 553 adjacent with the four-layer structure 54 of the first type current extending 5 is (Al0.39Ga0.61)0.5In0.5P III-V compounds.
The composition material of the first type limiting layer 6 is (Al0.8Ga0.2)0.5In0.5P III-V compounds, and thickness is 400nm；
The composition material of Second-Type limiting layer 8 is (Al0.8Ga0.2)0.5In0.5P III-V compounds, and thickness is 500nm；Second-Type electricity
The composition material for flowing extension layer 9 is (Al0.4Ga0.6)0.5In0.5P III-V compounds, and thickness is 5 μm.Active layer 7 is by 9 groups of friendships
For the quantum well structure of growth, specially build by (Al0.8Ga0.2)0.5In0.5P III-Vs compound constitute, trap by
(Al0.1Ga0.9)0.5In0.5P III-Vs compound is constituted.First type impurity is Te elements；Second-Type impurity is Mg units
Element.
A kind of light emitting diode epitaxial structure preparation method of high concentration Te doping, comprises the following steps：
Step one, on substrate 1 respectively formed cushion 2, corrosion barrier layer 3, roughened layer 4, terminate extension in roughened layer
30 DEG C of epitaxial growth temperature is reduced in the preceding 120s times, temperature curve is as shown in Figure 3.
Step 2, the first type of extension current extending 5 on roughened layer 4, specially first grow the first type current extending 5
First Rotating fields 51, in the first Rotating fields 51 Epitaxial growth, first group of superlattices 551.
Step 3, in first group of Rotating fields 52 of 551 the first type of Epitaxial growth current extending of superlattices 5 second,
Two-layer structure 52 Epitaxial growth, second group of superlattices 552.
Step 4, in second group of third layer structure 53 of 552 the first type of Epitaxial growth current extending of superlattices 5,
The 3rd group of superlattices 553 of the Epitaxial growth of three-decker 53.
Step 5, in the 3rd group of four-layer structure 54 of 553 the first type of Epitaxial growth current extending of superlattices 5.
Step 6, the first 5 four-layer structure of type current extending 54 growth terminate after, growth interruption 60s, at the same improve
30 DEG C of epitaxial growth temperature, simultaneous reactions chamber pressure increases 20mbar, while the flow of hydrogen bearing gas improves 1000sccm.It is wherein warm
Degree change curve is as shown in Figure 3.
Step 7, then the first type of epitaxial growth limiting layer successively in the four-layer structure 54 of the first type current extending 5
6th, active layer 7, Second-Type limiting layer 8, Second-Type current extending 9.
The step is obtained, the light emitting diode epitaxial structure of high concentration Te doping, as shown in figure 1, following steps are
Further make light emitting diode.
Step 8, in the evaporation metal speculum 10 of Second-Type current extending 9, and silicon substrate of the bonding with conducting function
11。
Step 9, corrosion remove substrate 1, cushion 2 and corrosion barrier layer 3 respectively.
Step 10, making expansion electrode 12 and the central electrode 13 on roughened layer 4, back electrode is deposited with the back side of silicon substrate 11
14。
Step 11, surface coarsening is carried out on the surface of roughened layer 4, sliver is carried out to chip, obtain as shown in Figure 4 luminous
Diode.
One embodiment of the present of invention is the foregoing is only, not to the limitation of this case design, all designs according to this case are closed
The equivalent variations that key is done, each fall within the protection domain of this case.
Claims (9)
1. the light emitting diode epitaxial structure of a kind of high concentration Te doping, formed respectively on substrate cushion, corrosion barrier layer,
Roughened layer, the first type current extending, the first type limiting layer, active layer, Second-Type limiting layer and Second-Type current extending；Have
Active layer side sets the first type current extending, and opposite side sets Second-Type current extending；Active layer and the first type electric current expand
Exhibition layer sets the first type limiting layer, and active layer sets Second-Type limiting layer with Second-Type current extending；It is characterized in that：The
One type current extending is set to n-layer structure, and superlattices, and the first type current extending doping Te are set between each Rotating fields.
2. the light emitting diode epitaxial structure that a kind of high concentration Te as claimed in claim 1 adulterates, it is characterised in that：First type
Current extending is set to n-layer structure, and its n is 4-10.
3. the light emitting diode epitaxial structure that a kind of high concentration Te as claimed in claim 1 adulterates, it is characterised in that：Superlattices
Alternately it is made up of two kinds of different materials, its alternate logarithm is 3-8 pairs.
4. the light emitting diode epitaxial structure that a kind of high concentration Te as claimed in claim 1 adulterates, it is characterised in that：Superlattices
Constituent material include AlGaInP, AlGaAs, AlGaInAs, GaAs, GaN, AlGaN, AlGaInN.
5. the light emitting diode epitaxial structure that a kind of high concentration Te as claimed in claim 1 adulterates, it is characterised in that：First type
The n-layer structure of current extending includes being made up of the III-V compound of different Al components.
6. the light emitting diode epitaxial structure that a kind of high concentration Te as claimed in claim 5 adulterates, it is characterised in that：First type
The Al change of component trend of the n-layer structural material of current extending includes successively decreasing, along the Al components in active layer epitaxially grown direction
Variation tendency is reduction.
7. the light emitting diode epitaxial structure that a kind of high concentration Te as claimed in claim 1 adulterates, it is characterised in that：First type
The n-layer layers thickness of current extending is 0.5-2 μm.
8. the light emitting diode epitaxial structure that a kind of high concentration Te as claimed in claim 1 adulterates, it is characterised in that：First type
The n-layer layers thickness changing trend of current extending includes successively decreasing, and the thickness change along active layer epitaxially grown direction becomes
Gesture is reduction.
9. the light emitting diode epitaxial structure that a kind of high concentration Te as claimed in claim 1 adulterates, it is characterised in that：Replace structure
Constituent material into two groups of materials of superlattices, the first type current extending adjacent with both sides is identical, and each element is than also phase
Together, and in structure the material layer of the first type current extending adjacent with both sides mutually staggers.
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| CN106129196A (en) * | 2016-08-30 | 2016-11-16 | 扬州乾照光电有限公司 | A kind of epitaxial wafer for flip LED chips and preparation method thereof |
| CN113823716B (en) * | 2021-09-17 | 2023-09-15 | 厦门士兰明镓化合物半导体有限公司 | LED epitaxial structure and preparation method thereof |
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