CN104332536B - High concentration Te doped light emitting diode epitaxial method - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000007797 corrosion Effects 0.000 claims abstract description 12
- 238000005260 corrosion Methods 0.000 claims abstract description 12
- 239000012159 carrier gas Substances 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 238000007788 roughening Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 13
- 238000001179 sorption measurement Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 41
- 150000001875 compounds Chemical class 0.000 description 20
- 239000000470 constituent Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
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Abstract
The invention discloses a high concentration Te doped light emitting diode epitaxial method. The method comprises the following steps of (1) forming a buffer layer, a corrosion barrier layer and a coarsening layer respectively on a substrate, (2) spreading the first layer structure of a first type current spreading layer on the coarsening layer, (3) carrying out the epitaxial growth of first group of superlattice on the first layer structure of the first type current spreading layer, (4) carrying out the epitaxial growth of a first type current spreading layer second layer structure on the first group of superlattice, (5) repeating the structures in steps (3) and (4) until the epitaxial growth of a first type current spreading layer nth structure on an n-1 group of superlattice, and (6) carrying out epitaxial growth of a first type limiting layer, an active layer, a second type limiting layer, and a second type current spreading layer on the first type current spreading layer nth structure. According to the manufactured light emitting diode epitaxial structure, the adsorption of short-wavelength light by impurities can be reduced, and the light emitting efficiency of a light emitting diode is effectively raised.
Description
Technical field
The present invention relates to LED technology field, refer in particular to a kind of LED epitaxial of high concentration Te doping
Method.
Background technology
Light emitting diode has that low-power consumption, size be little and high reliability, is widely used, however, existing skill
In art, luminous efficiency preferable light emitting diode higher to brightness requires to improve.Using the life of Metal Organic Vapor extension
The epitaxial structure that length has SQW can obtain higher internal quantum efficiency；And adopt metallic mirror and surface coarsening etc. to be inverted
The chip manufacture method of structure is it will be apparent that lift the external quantum efficiency of light emitting diode.
However, the first conductivity type being placed in active layer bottom can be led to be inverted to the top of active layer using being inverted chip structure
Portion.The first type current extending for conventional light emitting diodes structure typically adopts Si element as doped source, and is sending out short
In the light emitting diode of wavelength light, Si impurity shows and absorbs the light that part active layer sends, and is placed in the Si impurity on active layer
Extinction effect becomes apparent from.
Replace Si element can improve the extinction of impurity as the first type current extending doping using Te element, effectively improve
The external quantum efficiency of light emitting diode.But Te element is limited to the Wuli-Shili-Renli system approach of itself, miscellaneous in epitaxial process Te
In the case that matter intake is big, easily lead to epitaxial layer poor crystal quality.And Te impurity intake is little, there is current expansion effect
Really poor problem.In view of this, the present invention is to overcome described defect, proposes a kind of incorporation efficiency of raising Te impurity, can carry again
The epitaxial structure of high epitaxial crystal quality and growing method, this case thus produces.
Content of the invention
It is an object of the invention to provide a kind of light emitting diode epitaxial structure preparation method of high concentration Te doping, to subtract
Few absorption to short-wavelength light for the impurity, effectively improves the luminous efficiency of light emitting diode.
For reaching above-mentioned purpose, the solution of the present invention is：
A kind of LED epitaxial method of high concentration Te doping, comprises the following steps：
Step one, cushion, corrosion barrier layer, roughened layer are formed on substrate respectively, terminate in roughened layer epitaxial growth
Front reduction growth temperature；
Step 2, on roughened layer extension the first type current extending the first Rotating fields；
Step 3, in first type current extending first group of superlattices of the first Rotating fields Epitaxial growth；
Step 4, in first group of superlattices Epitaxial growth the first type current extending second Rotating fields；
Step 5, the structure of repeat step three, four, until expand in (n-1)th group of superlattices Epitaxial growth the first type electric current
Exhibition layer n-th layer structure；
Step 6, after the first type current extending n-th layer structure growth terminates, pause and improve chamber pressure and plus
Big carrier gas flux, and improve epitaxial growth temperature；
Step 7, in the first type current extending n-th layer structure then epitaxial growth the first type limiting layer, active layer,
Second-Type limiting layer, Second-Type current extending.
Further, reduce growth temperature before roughened layer epitaxial growth terminates, reduce scope 10-50 of epitaxial growth temperature
℃.
Further, the n group structure sheaf of the first current extending and the no pause that is grown between layers of superlattices are given birth to
Long.
Further, after the first type current extending n-th layer structure growth terminates, the time range of pause is the 15-80 second.
Further, after the first type current extending n-th layer structure growth terminates, improve the scope of epitaxial growth temperature
10-80℃.
Further, after the first type current extending n-th layer structure growth terminates, improve scope 10- of chamber pressure
80mbar.
Further, after the first type current extending n-th layer structure growth terminates, increase scope 1000- of carrier gas flux
3000sccm.
A kind of light emitting diode epitaxial structure of high concentration Te doping, sequentially forms cushion, corrosion on substrate respectively
Barrier layer, roughened layer, the first type current extending, the first type limiting layer, active layer, Second-Type limiting layer and Second-Type electric current expand
Exhibition layer；Active layer side arranges the first type current extending, and opposite side arranges Second-Type current extending；Active layer and the first type
Current extending arranges the first type limiting layer, and active layer arranges Second-Type limiting layer with Second-Type current extending；First type
Current extending is set to n-layer structure, arranges superlattices between Rotating fields, and the first type current extending doping Te.
Further, the first type current extending is set to n-layer structure, and its n is 4-10.
Further, superlattices are alternately made up of two kinds of different materials, and its alternate logarithm is 3-8 pair.
Further, the constituent material of superlattices include AlGaInP, AlGaAs, AlGaInAs, GaAs, GaN, AlGaN,
AlGaInN.
Further, the n-layer structure of the first type current extending includes being made up of the III-V compound of different Al components；Bag
Include and be made up of the III-V compound of identical Al component, and adjacent Rotating fields are made up of the material of different Al components.
Further, the Al change of component trend of the n-layer structural material of the first type current extending includes successively decreasing, along active layer
The Al change of component trend in epitaxial growth direction is to reduce.
Further, the n-layer layers thickness range of the first type current extending is 0.5-2 μm.
Further, the n-layer layers thickness changing trend of the first type current extending includes successively decreasing, along active layer extension
The thickness changing trend of the direction of growth is to reduce.
Further, alternately constitute the constituent material of two groups of materials, the first type current extending adjacent with both sides of superlattices
Identical, and the material layer of the first adjacent with both sides in structure type current extending mutually staggers.Assume superlattices by handing over
(Al for growth0.43Ga0.57)0.5In0.5P/(Al0.47Ga0.53)0.5In0.5The material layer of P is constituted, then with (Al0.43Ga0.57)0.5In0.5The material layer of the first adjacent type current extending of P material layer is (Al0.47Ga0.53)0.5In0.5P, and with
(Al0.47Ga0.53)0.5In0.5The material layer of the first adjacent type current extending of P material layer is (Al0.43Ga0.57)0.5In0.5P,
Alternate and stagger.
After such scheme, the present invention, by the first type current extending is set to n-layer structure, sets between Rotating fields
Put superlattices, the first type current extending doping Te.Improve Te impurity in the incorporation efficiency of the first type current extending and to change
Kind crystal mass.Solve the first type current extending crystal mass in the case of being passed through substantial amounts of Te impurity doping drastically to dislike
The problem changed, thus obtain higher epitaxial crystal quality.First type current extending doping Te, decreases the extinction of impurity,
It is effectively improved the luminous efficiency of light emitting diode.
The n-layer structure of described first type current extending is made up of the different III-V compound of Al component, or by Al
Component identical III-V compound is constituted；And adjacent Rotating fields are made up of the different material of Al component.Adjacent Rotating fields adopt
Different composition materials, for follow-up superlattices using and adjacent Rotating fields identical material alternating growth, reduce superlattices to the
One type current extending extends the impact of effect.
The Al change of component trend of the n-layer structural material of the first type current extending includes successively decreasing, along the life of active layer extension
The Al change of component trend of length direction is to reduce.Be conducive to improving the first type current extending expansion using this Al change of component trend
Exhibition effect, increases the current expansion ability of the first type current extending bottom.
Every a layer thickness of n-layer structure of first type current extending is 0.5-2 μm, and thickness is less than 0.5 μm, weakens this layer of knot
The current expansion effect of structure；More than 2 μm, thickness thickness partially can lead to the Te element aggregation amount in top layer suspending excessive to thickness, leads
Crystal mass is caused drastically to deteriorate.
N-layer structure each layer thickness variation trend of the first type current extending includes successively decreasing, along active layer epitaxially grown
The thickness changing trend in direction is to reduce.Using the variation tendency of growth thickness more and more thinner, be conducive to timely by superlattices
Ground improves the crystal mass of the first type current extending, improves the incorporation efficiency of Te element, prevents later stage the first type current expansion
Layer growing surface suspends excessive Te element and leads to crystal mass drastically to deteriorate.
The material of two groups of material layers of superlattices alternating growth is constituted with the Rotating fields of the first adjacent type current extending
Material is identical, and the material of two groups of material layers of superlattices alternating growth is different, is replaced by two groups of material layers of alternating growth
Constitute.But the material of the superlattices first type current extending Rotating fields adjacent with both sides is offset from each other, ground floor superlattices,
Last layer of superlattices are different from the material of the first current extending Rotating fields adjacent thereto.
Reduce growth temperature before roughened layer epitaxial growth terminates, reduce epitaxial growth temperature and be conducive to being incorporated to of Te, subtract
The suspension of few Te and effusion.N group constitutes being grown to no between layers of structure sheaf and the superlattices of the first current extending
Pause growth.Because composition the first current extending each layer growth of n group is thicker, different material layer is conducive to using the growth that no pauses
Obtain preferable interface crystal mass.After first type current extending n-th layer structure growth terminates, the time range of pause takes
The 15-80 second, improve scope 10-80mbar of chamber pressure, increase scope 1000-3000sccm of carrier gas flux, these
The adjustment of the management and control of growth course and growth parameter(s) is conducive to removing the indoor Te atmosphere of reaction and increases epi-layer surface Te simultaneously
Enter, reduce the impact to following epitaxial growth and epi-layer surface for the Te.Tie in the first type current extending n-th layer structure growth
Shu Hou, improves scope 10-80 DEG C of epitaxial growth temperature.Reduce the impact of the doping content to Second-Type impurity for the later stage, favorably
In the luminous efficiency improving light emitting diode.
Brief description
Fig. 1 is the epitaxial structure schematic diagram of the present invention；
Fig. 2 is the structural representation of the first type current extending of the present invention；
Fig. 3 is the growth temperature gradient map of the present invention；
Fig. 4 is the LED chip construction schematic diagram of the present invention.
Label declaration
Substrate 1 cushion 2
Corrosion barrier layer 3 roughened layer 4
First type current extending 5 first Rotating fields 51
Second Rotating fields 52 third layer structure 53
54 first groups of superlattices 551 of four-layer structure
The 3rd group of superlattices 553 of second group of superlattices 552
First type limiting layer 6 active layer 7
Second-Type limiting layer 8 Second-Type current extending 9
Metallic mirror 10 silicon substrate 11
Expansion electrode 12 central electrode 13
Back electrode 14.
Specific embodiment
Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
Refering to shown in Fig. 1, a kind of light emitting diode epitaxial structure of high concentration Te doping that the present invention discloses, in substrate 1
Upper sequentially form cushion 2, corrosion barrier layer 3, roughened layer 4, the first type current extending 5, the first type limiting layer 6 respectively, have
Active layer 7, Second-Type limiting layer 8, Second-Type current extending 9.Wherein, the first type current extending 5 by 4 Rotating fields and is sandwiched in layer
Superlattices composition between structure.
Wherein, substrate 1 adopts GaAs substrate, and thickness is 270 μm.The constituent material of cushion 2 adopts GaAs III-V
Compound, cushion 2 thickness is 600nm.Corrosion barrier layer 3 is made up of two parts, and the constituent material of its each several part adopts
(Al0.5Ga0.5)0.5In0.5P, GaAs III-V compound.(the Al of corrosion barrier layer 30.5Ga0.5)0.5In0.5P thickness is 300nm；
The GaAs thickness of corrosion barrier layer 3 is 100nm.The constituent material of roughened layer 4 adopts (Al0.7Ga0.3)0.5In0.5P III-V chemical combination
Thing, the thickness of roughened layer 4 is 2.5 μm.
As shown in Fig. 2 the first type current extending 5 is made up of 4 Rotating fields, the first type current extending 5 first Rotating fields
51 constituent material adopts (Al0.47Ga0.53)0.5In0.5P III-V compound, and thickness is 1.5 μm.First type current extending
The constituent material of 5 second Rotating fields 52 adopts (Al0.43Ga0.57)0.5In0.5P III-V compound, and thickness is 1.2 μm.First
The constituent material of type current extending 5 second Rotating fields 52 adopts (Al0.39Ga0.61)0.5In0.5P III-V compound, and thickness
For 1 μm.The constituent material of the first type current extending 5 four-layer structure 54 adopts (Al0.35Ga0.65)0.5In0.5P III-V chemical combination
Thing, and thickness is 0.8 μm.
As shown in Fig. 2 it is super across first group between the first type current extending 5 first Rotating fields 51 and the second Rotating fields 52
Lattice 551, first group of superlattices 551 are by (the Al of 5 groups of alternating growths0.43Ga0.57)0.5In0.5P/(Al0.47Ga0.53)0.5In0.5P
Material layer constitute, every layer of (Al0.43Ga0.57)0.5In0.5P、(Al0.47Ga0.53)0.5In0.5The thickness of P material layer is 3nm.Wherein
The material layer of the first group superlattices 551 adjacent with the first type current extending 5 first Rotating fields 51 is (Al0.43Ga0.57)0.5In0.5P III-V compound, wherein adjacent with the first type current extending 5 second Rotating fields 52 first group of superlattices 551
Material layer be (Al0.47Ga0.53)0.5In0.5P III-V compound.
Across second group of superlattices 552 between first type current extending 5 second Rotating fields 52 and third layer structure 53, the
Two groups of superlattices 552 are by (the Al of 5 groups of alternating growths0.39Ga0.61)0.5In0.5P /(Al0.43Ga0.57)0.5In0.5P material layer structure
Become, every layer of (Al0.39Ga0.61)0.5In0.5P 、(Al0.43Ga0.57)0.5In0.5Thickness is 3nm.Wherein with the first type current extending
The material layer of first group of adjacent superlattices 552 of 5 second Rotating fields 52 is (Al0.39Ga0.61)0.5In0.5P III-V compound, its
In the material layer of second group superlattices 552 adjacent with the first type current extending 5 third layer structure 53 be (Al0.43Ga0.57)0.5In0.5III-V compound.
Across the 3rd group of superlattices 553 between first type current extending 5 third layer structure 53 and four-layer structure 54, the
Three groups of superlattices 553 are by (the Al of 5 groups of alternating growths0.35Ga0.65)0.5In0.5P/(Al0.39Ga0.61)0.5In0.5P material layer is constituted,
Every layer of (Al0.35Ga0.65)0.5In0.5P、(Al0.39Ga0.61)0.5In0.5P thickness is 3nm.Wherein with the first type current extending 5
The material layer of the 3rd group of adjacent superlattices 553 of three-decker 53 is (Al0.35Ga0.65)0.5In0.5P III-V compound, wherein
The material layer of the three group superlattices 553 adjacent with the first type current extending 5 four-layer structure 54 is (Al0.39Ga0.61)0.5In0.5P III-V compound.
The composition material on the first type barrier layer 6 is (Al0.8Ga0.2)0.5In0.5P III-V compound, and thickness is 400nm；
The composition material on Second-Type barrier layer 8 is (Al0.8Ga0.2)0.5In0.5P III-V compound, and thickness is 500nm；Second-Type electricity
The composition material of stream extension layer 9 is (Al0.4Ga0.6)0.5In0.5P III-V compound, and thickness is 5 μm.Active layer 7 is handed over by 9 groups
For the quantum well structure of growth, specially build by (Al0.8Ga0.2)0.5In0.5P III-V compound constitute, trap by
(Al0.1Ga0.9)0.5In0.5P III-V compound is constituted.First type impurity is Te element；Second-Type impurity is Mg unit
Element.
A kind of light emitting diode epitaxial structure preparation method of high concentration Te doping, comprises the following steps：
Step one, on substrate 1 respectively formed cushion 2, corrosion barrier layer 3, roughened layer 4, terminate extension in roughened layer
Reduce by 30 DEG C of epitaxial growth temperature, temperature curve is as shown in Figure 3 in the front 120s time.
Step 2, on roughened layer 4 extension the first type current extending 5, specially first grow the first type current extending 5
First Rotating fields 51, in the first Rotating fields first group of superlattices 551 of 51 Epitaxial growth.
Step 3, in first group of superlattices, 551 Epitaxial growth the first type current extending 5 second Rotating fields 52,
Two-layer structure second group of superlattices 552 of 52 Epitaxial growth.
Step 4, in second group of superlattices, 552 Epitaxial growth the first type current extending 5 third layer structure 53,
The 3rd group of superlattices 553 of three-decker 53 Epitaxial growth.
Step 5, in the 3rd group of superlattices 553 Epitaxial growth the first type current extending 5 four-layer structure 54.
Step 6, the first type current extending 5 four-layer structure 54 growth terminate after, growth interruption 60s, improve simultaneously
30 DEG C of epitaxial growth temperature, simultaneous reactions chamber pressure increases 20mbar, and the flow of hydrogen bearing gas improves 1000sccm simultaneously.Wherein temperature
Degree change curve is as shown in Figure 3.
Step 7, in the first type current extending 5 four-layer structure 54 then epitaxial growth the first type limiting layer successively
6th, active layer 7, Second-Type limiting layer 8, Second-Type current extending 9.
Described step obtains, and the light emitting diode epitaxial structure of high concentration Te doping, as shown in figure 1, following steps are
Make light emitting diode further.
Step 8, in Second-Type current extending 9 evaporation metal speculum 10, and be bonded the silicon substrate with conducting function
11.
Step 9, corrosion remove substrate 1, cushion 2 and corrosion barrier layer 3 respectively.
Step 10, expansion electrode 12 and central electrode 13 are made on roughened layer 4, be deposited with back electrode at silicon substrate 11 back side
14.
Step 11, carry out surface coarsening on roughened layer 4 surface, sliver is carried out to chip, obtain as shown in Figure 4 luminous
Diode.
The foregoing is only one embodiment of the present of invention, not the restriction to this case design, all designs according to this case are closed
The equivalent variations that key is done, each fall within the protection domain of this case.
Claims (7)
1. a kind of doping of high concentration Te LED epitaxial method it is characterised in that：Comprise the following steps：
Step one, cushion, corrosion barrier layer, roughened layer are formed on substrate respectively, drop before roughened layer epitaxial growth terminates
Low growth temperature；
Step 2, on roughened layer extension the first type current extending the first Rotating fields；
Step 3, in first type current extending first group of superlattices of the first Rotating fields Epitaxial growth；
Step 4, in first group of superlattices Epitaxial growth the first type current extending second Rotating fields；
Step 5, the structure of repeat step three, four, until in (n-1)th group of superlattices Epitaxial growth the first type current extending
N-th layer structure；
Step 6, after the first type current extending n-th layer structure growth terminates, pause and improve chamber pressure and increase carry
Throughput, and improve epitaxial growth temperature；
Step 7, in the first type current extending n-th layer structure then epitaxial growth the first type limiting layer, active layer, second
Type limiting layer, Second-Type current extending；
First type current extending doping Te.
2. a kind of high concentration Te doping as claimed in claim 1 LED epitaxial method it is characterised in that：In roughening
Layer epitaxially grown reduces growth temperature before terminating, and reduces scope 10-50 DEG C of epitaxial growth temperature.
3. a kind of high concentration Te doping as claimed in claim 1 LED epitaxial method it is characterised in that：First electricity
The n group structure sheaf of stream extension layer is grown with the no pause that is grown between layers of superlattices.
4. a kind of high concentration Te doping as claimed in claim 1 LED epitaxial method it is characterised in that：First type
After current extending n-th layer structure growth terminates, the time range of pause is the 15-80 second.
5. a kind of high concentration Te doping as claimed in claim 1 LED epitaxial method it is characterised in that：First
After type current extending n-th layer structure growth terminates, improve scope 10-80 DEG C of epitaxial growth temperature.
6. a kind of high concentration Te doping as claimed in claim 1 LED epitaxial method it is characterised in that：First
After type current extending n-th layer structure growth terminates, improve scope 10-80mbar of chamber pressure.
7. a kind of high concentration Te doping as claimed in claim 1 LED epitaxial method it is characterised in that：First
After type current extending n-th layer structure growth terminates, increase scope 1000-3000sccm of carrier gas flux.
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| CN110289342B (en) * | 2019-07-17 | 2024-02-27 | 厦门乾照半导体科技有限公司 | High-power light-emitting diode and manufacturing method thereof |
| CN110416374A (en) * | 2019-08-08 | 2019-11-05 | 厦门乾照半导体科技有限公司 | LED epitaxial slice and its growing method, light emitting diode, display device |
| CN115377262A (en) * | 2021-07-22 | 2022-11-22 | 厦门三安光电有限公司 | Epitaxial structure and light emitting diode |
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| CN1802757A (en) * | 2003-10-15 | 2006-07-12 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device |
| CN103430331A (en) * | 2011-07-08 | 2013-12-04 | 东芝技术中心有限公司 | Laterally contacted blue LED with superlattice current spreading layer |
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| CN1802757A (en) * | 2003-10-15 | 2006-07-12 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device |
| CN103430331A (en) * | 2011-07-08 | 2013-12-04 | 东芝技术中心有限公司 | Laterally contacted blue LED with superlattice current spreading layer |
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Application publication date: 20150204 Assignee: Yangzhou Ganzhao Photoelectric Co., Ltd. Assignor: Xiamen Changelight Co., Ltd. Contract record no.: 2017320000061 Denomination of invention: High concentration Te doped light emitting diode epitaxial method Granted publication date: 20170215 License type: Exclusive License Record date: 20170310 |