CN104300058B - A kind of green-yellow light LED of the wide barrier structure containing doping - Google Patents

A kind of green-yellow light LED of the wide barrier structure containing doping Download PDF

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CN104300058B
CN104300058B CN201410538801.3A CN201410538801A CN104300058B CN 104300058 B CN104300058 B CN 104300058B CN 201410538801 A CN201410538801 A CN 201410538801A CN 104300058 B CN104300058 B CN 104300058B
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layer
undoped
superlattices
barrier structure
active layer
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CN104300058A (en
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林鸿亮
李全素
徐培强
杨凯
张双翔
张银桥
王向武
李忠辉
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Yangzhou Changelight Co Ltd
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Yangzhou Changelight Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Abstract

A kind of green-yellow light LED of the wide barrier structure containing doping, belong to photoelectron technical field, it is included in the cushion of the one side growth of GaAs substrates, Bragg reflecting layer, the first limiting layer, the active layer of undoped superlattices first, the wide barrier structure layer of doping, the active layer of undoped superlattices second, the second limiting layer, GaP Window layers, first electrode is provided with GaP Window layers, the another side of GaAs substrates is provided with second electrode.The present invention can improve the hole injection of active area, electron-hole recombinations efficiency is lifted, so as to significantly improve product light efficiency, lifts 2%~4% chip yield, therefore, the present invention can largely produce the LED of the high efficiency of emission wavelength 560~580nm scopes and the yellowish green optical band of high production yield.

Description

A kind of green-yellow light LED of the wide barrier structure containing doping
Technical field
The invention belongs to photoelectron technical field, and in particular to AlGaInP quaternary system LED production technical fields.
Background technology
The yellowish green light-emitting diode of quaternary system AlGaInP be widely used in signal designation, display, traffic instruction, display screen, The every field such as automotive lighting, special lighting.Quaternary AlGaInP materials shorten with wavelength, and active layer Al components constantly rise Height, Al atoms are combined with oxygen or carbon atom causes material to produce serious lattice defect, and luminous efficiency declines；On the other hand it is yellowish green The energy band of light is because the ratio of Al components improves, and energy gap is progressively transformed into indirect gap by direct gap, and internal quantum efficiency enters one Step declines to a great extent, and causes yellowish green optical band LED product light efficiency relatively low；Meanwhile utilize organometallic vapor deposition（MOCVD）Technology During production, because slide glass dish edge epi deposition efficiency is poor, epitaxial wafer growth back edge poor performance, production yield is low, such to ask Inscribe to embody in the more extreme yellowish green optical band of process window and become apparent.
Traditional AlGaInP quaternary system green-yellow light LED, such as Fig. 1, on GaAs substrates 11, is grown to successively from bottom to top Cushion 12, Bragg reflecting layer 13, the first limiting layer 14, undoped active layer 15, the second limiting layer 16 and GaP Window layers 17.This structure is due to the active layer material energy gap limit of yellowish green optical band itself, it is difficult to obtains efficient electron-hole recombinations effect Rate, technical staff capture to improve electron hole in active layer, improve internal quantum efficiency, general using increase active layer superlattices Logarithm, but such technique lifting limited brightness, and because the increase of active layer thickness, PN junction barrier capacitance reduce, device can be made ESD antistatic properties be deteriorated；The technique is due to window narrows simultaneously, and edge is due to epitaxial deposition inefficient, epitaxial wafer during production The problem of edge yield is low highlights.
The content of the invention
To solve the above problems, the present invention is intended to provide a kind of lift product qualification rate, keep the yellowish green of luminous efficiency Light LED.
It is the cushion that is grown present invention resides in the one side of GaAs substrates, Bragg reflecting layer, the first limiting layer, undoped The active layer of superlattices first, the wide barrier structure layer of doping, the active layer of undoped superlattices second, the second limiting layer, GaP windows Layer, is provided with first electrode in GaP Window layers, the another side of GaAs substrates is provided with second electrode.
The present invention can significantly improve the interior quantum of traditional structure by adding the wide barrier structure layer of doping in active layer The problem of efficiency is low, the hole injection of active area is improved, lifts electron-hole recombinations efficiency, so as to significantly improve product light Effect, its brightness can lift 30%~50% compared with traditional structure, while can improve Product Process window, improve production technology, lifting 2% ~4% chip yield, therefore, the present invention can largely produce high efficiency and the high production of emission wavelength 560~580nm scopes The LED of the yellowish green optical band of yield.
The wide barrier structure layer of doping of the present invention is AlYGa(1-Y)InP adulterates wide barrier layer, wherein, 0.5<Y<1, doping Element is Zn or Mg.Can be in active area offer hole, raising active area electronics and hole-recombination, raising using Zn or Mg doping Quantum efficiency, the hole of the further higher offer of doping concentration is more, and lifting effect is bigger, but the excessive meeting of active area doping Lower device service life, so present invention selection doping concentration scope is between 1E16-1E17.
The thickness d of the wide barrier structure layer of doping is 30nm≤d≤300nm.Thickness thickness can provide more holes, carry High active area electronics and hole-recombination, improve internal quantum efficiency, material after further thickness thickness epitaxial wafer edge epi deposits Quality process window increases, and epitaxial wafer edge chip output yield is high, but adulterates the wide blocked up skirt materials of barrier layer thickness and change Kind effect saturation is without further castering action, simultaneously because thickness increase active area integrally adulterates and can excessively lower device and use the longevity Life, the wide barrier structure layer thickness is blocked up in addition also results in the reduction of PN junction barrier capacitance, device ESD degradations.
The undoped active layer of superlattices first, the active layer of undoped superlattices second are respectively AlXGa(1-X)InP/ AlYGa(1-Y)InP active layers, 0.3≤X≤0.35,0.6≤Y≤0.7, periodic thickness are 1 nm~15nm, and cycle logarithm is 2- 120 pairs.Undoped active layer can trapped electron, form efficient composite luminescence layer, simultaneously because active layer free from admixture doping can Further lift device service life.Value adjusts according to product actual wavelength, and small 0.7 purpose that is equal to of Y values is that guarantee is super brilliant Lattice structure band difference, ensure active area combined efficiency.Such as Y value such as less than 0.5, meeting direct band gap can absorb active area and light, make Product light efficiency is low；As Y value is higher, potential barrier is higher, and product voltage is high, and device performance is poor." periodic thickness " of the invention refers to single pair Active layer material AlXGa(1-X)InP/AlYGa(1-Y)InP thickness.As periodic thickness is blocked up, then quantum effect is deteriorated, and light effect Rate step-down, while the increase of active area integral thickness, PN junction barrier capacitance reduce, device ESD degradations.Generally logarithm is more can Effectively to lift the saturation current of device and internal quantum efficiency, but ESD degradation problems may be brought, logarithm is more, then multiple It is higher to close efficiency；Logarithm is few, then combined efficiency is low.But the too many quantum combined efficiency saturation of logarithm is without humidification, while companion Increase with logarithm, active area integral thickness increase, PN junction barrier capacitance reduces, device ESD degradations.So the present invention selects 2~120 pairs.
The undoped active layer of superlattices first, the main light emission wavelength of the active layer of undoped superlattices second are 570 ± 10nm, To ensure to send green-yellow light of the spatial distribution wave band as 560-580nm.
Brief description of the drawings
Fig. 1 is traditional green-yellow light LED structural representation.
Fig. 2 is the green-yellow light LED of Example 1 and Example 2 of the present invention structural representation.
Embodiment
Embodiment 1
First, production craft step：
1st, N-GaAs substrates 21 are placed in MOCVD reaction cavities, are heated to 600 DEG C~700 DEG C, remove substrate surface oxygen Change layer, and grow GaAs cushions 22.
2nd, one layer of Bragg reflecting layer 23 is grown on GaAs cushions 22.
3rd, N-type limiting layer 24 is grown on Bragg reflecting layer 23.
4th, undoped the first active layer of superlattices 25 is grown on N-type limiting layer 24：With AlXGa(1-X)InP/AlYGa(1-Y) InP is material, wherein, X values 0.3, Y values 0.7, periodic thickness 10nm, logarithm 30 is right.
5th, with Al on the first active layer 25YGa(1-Y)InP is material, is doped with same conductive type dopant, grows wide potential barrier Structure sheaf 26.
In the present embodiment, Y values 0.7, thickness 80nm, doped chemical Zn, doping concentration 5E16.
6th, with AlXGa(1-X)InP/AlYGa(1-Y)InP is material, is carried out on wide barrier structure layer 26 is adulterated undoped super The growth of the second active layer of lattice 27, wherein, X values 0.3, Y values 0.7, periodic thickness 10nm, logarithm 30 is right.
7th, P-AlInP limiting layers 28 are grown on the second active layer 27.
8th, GaP Window layers 29 are grown on P-AlInP limiting layers 28.
9th, first electrode 30 is made in GaP Window layers 29, second electrode 31 is made at the back side of N-GaAs substrates 21.
2nd, product structure is analyzed：
As shown in Fig. 2 include substrate 21 using green-yellow light LED made of process above, substrate 21 divide for first surface and Second surface.It is from bottom to top cushion 22, Bragg reflecting layer 23, N-type limiting layer on the first surface of substrate 21 24th, undoped the first active layer of superlattices 25, the wide barrier structure layer 26 of doping, the second active layer of undoped superlattices 27, p-type limit Preparative layer 28 and GaP Window layers 29.
First electrode 30 is formed on Window layer 29；Second electrode 31 is formed on the second surface of substrate 21.
3rd, the photoelectric characteristic for evaluating the quaternary system luminous diode device structure that size is 7.0 × 7.0mil is listed in table 1。
Table 1
　 VF / V LOP / mcd WLD / nm Yield
No.1 2.06 67.2 570.2 87.78
No.2 2.07 64.9 569.8 88.90
No.3 2.05 61.9 569.6 89.92
No.4 2.06 62.6 569.7 89.54
Average value 2.06 64.1 569.9 89.03
As shown in table 1, the result of electric current is flowed through after first electrode and second electrode are powered, has launched dominant wavelength and has been averaged It is worth the yellow-green light for 569.9nm, forward direction flows through 20 milliamperes（mA）Forward voltage average value during electric current is 2.06V, normal direction light Strong 64.1mcd, chip yield 89.03%；
Embodiment 2
First, production craft step：
1st, N-GaAs substrates 21 are placed in MOCVD reaction cavities, are heated to 600 DEG C~700 DEG C, remove substrate surface oxygen Change layer, and grow GaAs cushions 22.
2nd, one layer of Bragg reflecting layer 23 is grown on GaAs cushions 22.
3rd, N-type limiting layer 24 is grown on Bragg reflecting layer 23.
4th, undoped the first active layer of superlattices 25 is grown on N-type limiting layer 24：With AlXGa(1-X)InP/AlYGa(1-Y) InP is material, wherein, X values 0.35, Y values 0.6, periodic thickness 10nm, logarithm 30 is right.
5th, with Al on the first active layer 25YGa(1-Y)InP is material, is doped with same conductive type dopant, grows wide potential barrier Structure sheaf 26.
In the present embodiment, Y values 0.6, thickness 150nm, doped chemical Mg, doping concentration 5E16.
6th, with AlXGa(1-X)InP/AlYGa(1-Y)InP is material, and undoped super crystalline substance is carried out adulterating wide barrier structure layer 26 The growth of the second active layer of lattice 27, wherein, X values 0.35, Y values 0.6, periodic thickness 10nm, logarithm 60 is right.
7th, P-AlInP limiting layers 28 are grown on the second active layer 27.
8th, GaP Window layers 29 are grown on P-AlInP limiting layers 28.
9th, first electrode 30 is made in GaP Window layers 29, second electrode 31 is made at the back side of N-GaAs substrates 21.
2nd, product structure is analyzed：
As shown in Fig. 2 include substrate 21 using green-yellow light LED made of process above, substrate 21 divide for first surface and Second surface.It is from bottom to top cushion 22, Bragg reflecting layer 23, N-type limiting layer on the first surface of substrate 21 24th, undoped the first active layer of superlattices 25, the wide barrier structure layer 26 of doping, the second active layer of undoped superlattices 27, p-type limit Preparative layer 28 and GaP Window layers 29.
First electrode 30 is formed on Window layer 29；Second electrode 31 is formed on the second surface of substrate 21.
3rd, the photoelectric characteristic for evaluating the quaternary system luminous diode device structure that size is 7.0 × 7.0mil is listed in table 2。
Table 2
　 VF / V LOP / mcd WLD / nm Yield
No.1 2.08 71.7 570.8 91.07
No.2 2.09 69.9 570.1 90.85
No.3 2.08 70.7 570.6 92.28
No.4 2.10 72.5 570.8 91.16
Average value 2.09 71.2 570.6 91.3
As shown in table 2, the result of electric current is flowed through after first electrode and second electrode are powered, has launched dominant wavelength and has been averaged It is worth the yellow-green light for 570.6nm, forward direction flows through 20 milliamperes（mA）Forward voltage average value during electric current is 2.09V, normal direction light Strong 71.2mcd, chip yield 91.3%.

Claims (2)

1. a kind of green-yellow light LED for adulterating wide barrier structure, cushion, the Prague for being included in the one side growth of GaAs substrates are anti- Layer, the first limiting layer, the active layer of undoped superlattices first, the second limiting layer, GaP Window layers are penetrated, is set in GaP Window layers There is first electrode, the another side of GaAs substrates is provided with second electrode；It is characterized in that：It is active in undoped superlattices first Wide barrier structure layer and the active layer of undoped superlattices second are adulterated in growth between layer and the second limiting layer；
The wide barrier structure layer of doping is AlYGa(1-Y)InP adulterates wide barrier layer, wherein, 0.5<Y<1, doped chemical be Zn or Mg, doping concentration 1E16-1E17；
The undoped active layer of superlattices first, the active layer of undoped superlattices second are respectively AlXGa(1-X)InP/AlYGa(1-Y) InP active layers, 0.3≤X≤0.35,0.6≤Y≤0.7, periodic thickness are 1 nm~15nm, and cycle logarithm is 2-120 pairs；
The undoped active layer of superlattices first, the main light emission wavelength of the active layer of undoped superlattices second are 570 ± 10nm.
2. green-yellow light LED according to claim 1, it is characterised in that：The thickness d of the wide barrier structure layer of the doping is 30nm≤d≤300nm。
CN201410538801.3A 2014-10-14 2014-10-14 A kind of green-yellow light LED of the wide barrier structure containing doping Active CN104300058B (en)

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CN106206886B (en) * 2016-08-10 2018-04-10 天津三安光电有限公司 Light emitting diode
CN107768492B (en) * 2017-11-17 2019-08-02 扬州乾照光电有限公司 A kind of yellowish green light-emitting diode and production method
CN108258094A (en) * 2018-01-06 2018-07-06 李丹丹 Light emitting semiconductor device and preparation method thereof
CN112542540B (en) * 2019-09-20 2021-12-31 山东华光光电子股份有限公司 GaAs-based ultra-high brightness LED structure and preparation method thereof
CN114447168B (en) * 2022-01-29 2024-01-30 厦门三安光电有限公司 LED epitaxial structure, LED chip and display device

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CN102664224A (en) * 2012-05-25 2012-09-12 厦门乾照光电股份有限公司 AlGaInP system light emitting diode with double-epitaxy structure

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CN102664224A (en) * 2012-05-25 2012-09-12 厦门乾照光电股份有限公司 AlGaInP system light emitting diode with double-epitaxy structure

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