CN104300058A - Green-yellow light LED with doped wide potential barrier structure - Google Patents
Green-yellow light LED with doped wide potential barrier structure Download PDFInfo
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- CN104300058A CN104300058A CN201410538801.3A CN201410538801A CN104300058A CN 104300058 A CN104300058 A CN 104300058A CN 201410538801 A CN201410538801 A CN 201410538801A CN 104300058 A CN104300058 A CN 104300058A
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- 238000005036 potential barrier Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 230000000737 periodic effect Effects 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 4
- 238000005215 recombination Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910002059 quaternary alloy Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
The invention belongs to the technical field of photoelectrons, and relates to a green-yellow light LED with a doped wide potential barrier structure. The green-yellow light LED comprises a buffer layer, a bragg reflecting layer, a first limiting layer, a first non-doped superlattice active layer, a doped wide potential barrier structural layer, a second non-doped superlattice active layer, a second limiting layer and a GaP window layer, wherein the buffer layer grows on one face of a GaAs substrate. A first electrode is arranged on the GaP window layer. A second electrode is arranged on the other face of the GaAs substrate. According to the green-yellow light LED, the hole injection of the active area can be improved, the recombination efficiency of an electron hole is improved, accordingly, the product lighting effect can be greatly improved, the chip pass percent is increased by 2 percent to 4 percent, and therefore, a large number of high-efficiency and high-yield green-yellow light waveband LEDs with the light emitting wavelength ranging from 560 nm to 580 nm can be produced.
Description
Technical field
The invention belongs to photoelectron technical field, be specifically related to AlGaInP quaternary system LED production technical field.
Background technology
Quaternary system AlGaInP green-yellow light light-emitting diode is widely used in the every field such as signal designation, display, traffic instruction, display screen, automotive lighting, special lighting.Quaternary AlGaInP material shortens along with wavelength, and active layer Al component constantly raises, and Al atom is combined with oxygen or carbon atom and causes material to produce serious lattice defect, and luminous efficiency declines; The ratio due to Al component of being with of green-yellow light improves on the other hand, and energy gap is progressively transformed into indirect gap by direct gap, and internal quantum efficiency declines to a great extent further, causes green-yellow light wave band LED product light efficiency lower; Meanwhile, when utilizing organometallic vapor deposition (MOCVD) technology to produce, because slide glass plate edge epitaxial deposition efficiency is poor, epitaxial wafer growth back edge poor performance, produces yield low, and problems embodies more obvious at the green-yellow light wave band of the process window more limit.
Traditional AlGaInP quaternary system green-yellow light LED, as Fig. 1, on GaAs substrate 11, is grown to resilient coating 12, Bragg reflecting layer 13, first limiting layer 14, undoped active layer 15, second limiting layer 16 and GaP Window layer 17 from bottom to top successively.This structure is due to the active layer material energy gap limit of green-yellow light wave band self, be difficult to obtain efficient electron-hole recombinations efficiency, technical staff captures at active layer for improving electron hole, improve internal quantum efficiency, general employing increases active layer superlattice logarithm, but this type of technique promotes limited brightness, and due to the increase of active layer thickness, PN junction barrier capacitance reduces, and the ESD antistatic property of device can be made to be deteriorated; This technique is due to window narrows simultaneously, during production edge due to epitaxial deposition efficiency poor, the problem that epitaxial wafer edge yield is low highlights.
Summary of the invention
For solving the problem, the present invention aim to provide a kind of can improving product qualification rate, keep the green-yellow light LED of luminous efficiency.
Present invention resides in resilient coating, Bragg reflecting layer, the first limiting layer, undoped superlattice first active layer, wide barrier structure layer of adulterating, undoped superlattice second active layer, the second limiting layer, the GaP Window layer of the one side growth of GaAs substrate, GaP Window layer is provided with the first electrode, the another side of GaAs substrate is provided with the second electrode.
The present invention can improve the low problem of the internal quantum efficiency of traditional structure significantly by adding the wide barrier structure layer of doping in active layer, the hole of improving active area is injected, promote electron-hole recombinations efficiency, thus improve product light efficiency significantly, its brightness comparatively traditional structure can promote 30% ~ 50%, Product Process window can be improved simultaneously, improve production technology, promote 2% ~ 4% chip yield, therefore, the present invention can produce the LED of the high efficiency of emission wavelength 560 ~ 580nm scope and the green-yellow light wave band of high production yield in a large number.
The wide barrier structure layer of doping of the present invention is Al
yga
(1-Y)inP adulterates wide barrier layer, and wherein, 0.5<Y<1, doped chemical is Zn or Mg.Use Zn or Mg doping can provide hole in active area, improve active area electronics and hole-recombination, improve internal quantum efficiency, the higher hole provided of further doping content is more, promote effect larger, but active area doping too much can lower device useful life, so the present invention selects doping content scope to be between 1E16-1E17.
The thickness d of the wide barrier structure layer of described doping is 30nm≤d≤300nm.Thickness is thick provides more hole, improve active area electronics and hole-recombination, improve internal quantum efficiency, after the thick epitaxial wafer edge epi deposition of further thickness, quality of materials process window increases, epitaxial wafer edge chip output yield is high, but it is saturated without further castering action that the blocked up skirt materials of wide barrier layer thickness of adulterating improves effect, simultaneously too much can lower device useful life because thickness increases active area entirety doping, the blocked up PN junction barrier capacitance that also can cause of this wide barrier structure layer thickness reduces in addition, device ESD degradation.
Undoped superlattice first active layer, undoped superlattice second active layer are respectively Al
xga
(1-X)inP/Al
yga
(1-Y)inP active layer, 0.3≤X≤0.35,0.6≤Y≤0.7, periodic thickness is 1 nm ~ 15nm, and cycle logarithm is 2-120 couple.Undoped active layer can trapped electron, forms efficient recombination luminescence layer, simultaneously because the doping of active layer free from admixture can boost device useful life further.Value is according to the adjustment of product actual wavelength, and Y value is little to be equaled 0.7 object and can be with poor for ensureing superlattice structure, ensures source region combined efficiency.If Y value is as being less than 0.5, can be absorbed with source region luminescence by direct band gap, makes product light efficiency low; As Y value is higher, potential barrier is higher, and product voltage is high, and device performance is poor.The present invention's " periodic thickness " refers to single to active layer material Al
xga
(1-X)inP/Al
yga
(1-Y)the thickness of InP.As periodic thickness is blocked up, then quantum effect is deteriorated, luminous efficiency step-down, and active area integral thickness increases simultaneously, and PN junction barrier capacitance reduces, device ESD degradation.Usual logarithm is more can the effectively saturation current of boost device and internal quantum efficiency, but may bring ESD degradation problem, and logarithm is more, then combined efficiency is higher; Logarithm is few, then combined efficiency is low.But logarithm too many quantum combined efficiency is saturated without humidification, increase with logarithm, active area integral thickness increases simultaneously, and PN junction barrier capacitance reduces, device ESD degradation.So the present invention select 2 ~ 120 right.
The main light emission wavelength of undoped superlattice first active layer, undoped superlattice second active layer is 570 ± 10nm, to ensure to send the green-yellow light that spectral distribution wave band is 560-580nm.
Accompanying drawing explanation
Fig. 1 is the structural representation of traditional green-yellow light LED.
Fig. 2 is the structural representation of the green-yellow light LED of the embodiment of the present invention 1 and embodiment 2.
Embodiment
embodiment 1
One, production craft step:
1, N-GaAs substrate 21 is placed in MOCVD reaction cavity, is heated to 600 DEG C ~ 700 DEG C, remove substrate surface oxide layer, and grow GaAs resilient coating 22.
2, on GaAs resilient coating 22, one deck Bragg reflecting layer 23 is grown.
3, on Bragg reflecting layer 23, N-type limiting layer 24 is grown.
4, on N-type limiting layer 24, undoped superlattice first active layer 25 is grown: with Al
xga
(1-X)inP/Al
yga
(1-Y)inP is material, and wherein, X value 0.3, Y value 0.7, periodic thickness 10nm, logarithm 30 is right.
5, on the first active layer 25 with Al
yga
(1-Y)inP is material, mixes with same conductive type dopant, grows wide barrier structure layer 26.
In the present embodiment, Y value 0.7, thickness 80nm, doped chemical is Zn, doping content 5E16.
6, with Al
xga
(1-X)inP/Al
yga
(1-Y)inP is material, and the wide barrier structure layer 26 of doping is carried out the growth of undoped superlattice second active layer 27, and wherein, X value 0.3, Y value 0.7, periodic thickness 10nm, logarithm 30 is right.
7, on the second active layer 27, P-AlInP limiting layer 28 is grown.
8, P-AlInP limiting layer 28 grows GaP Window layer 29.
9, in GaP Window layer 29, make the first electrode 30, make the second electrode 31 at the back side of N-GaAs substrate 21.
Two, product structure analysis:
As shown in Figure 2, the green-yellow light LED adopting above technique to make comprises substrate 21, and substrate 21 is divided into first surface and second surface.On the first surface of substrate 21, be resilient coating 22, Bragg reflecting layer 23, N-type limiting layer 24, undoped superlattice first active layer 25, wide barrier structure layer 26 of adulterating, undoped superlattice second active layer 27, P type limiting layer 28 and GaP Window layer 29 from bottom to top.
First electrode 30 is formed on Window layer 29; Second electrode 31 is formed on the second surface of substrate 21.
Three, photoelectric characteristic evaluation being of a size of the quaternary system luminous diode device structure of 7.0 × 7.0mil lists in table 1.
Table 1
| VF / V | LOP / mcd | WLD / nm | Yield | |
| No.1 | 2.06 | 67.2 | 570.2 | 87.78 |
| No.2 | 2.07 | 64.9 | 569.8 | 88.90 |
| No.3 | 2.05 | 61.9 | 569.6 | 89.92 |
| No.4 | 2.06 | 62.6 | 569.7 | 89.54 |
| Mean value | 2.06 | 64.1 | 569.9 | 89.03 |
As shown in table 1, after the first electrode and the second electrifying electrodes, flow through the result of electric current, launched the yellow-green light that dominant wavelength mean value is 569.9nm, forward voltage mean value when forward flows through 20 milliamperes of (mA) electric currents is 2.06V, normal luminous intensity 64.1mcd, chip yield 89.03%;
embodiment 2
One, production craft step:
1, N-GaAs substrate 21 is placed in MOCVD reaction cavity, is heated to 600 DEG C ~ 700 DEG C, remove substrate surface oxide layer, and grow GaAs resilient coating 22.
2, on GaAs resilient coating 22, one deck Bragg reflecting layer 23 is grown.
3, on Bragg reflecting layer 23, N-type limiting layer 24 is grown.
4, on N-type limiting layer 24, undoped superlattice first active layer 25 is grown: with Al
xga
(1-X)inP/Al
yga
(1-Y)inP is material, and wherein, X value 0.35, Y value 0.6, periodic thickness 10nm, logarithm 30 is right.
5, on the first active layer 25 with Al
yga
(1-Y)inP is material, mixes with same conductive type dopant, grows wide barrier structure layer 26.
In the present embodiment, Y value 0.6, thickness 150nm, doped chemical is Mg, doping content 5E16.
6, with Al
xga
(1-X)inP/Al
yga
(1-Y)inP is material, and carry out the growth of undoped superlattice second active layer 27 in the wide barrier structure layer 26 of doping, wherein, X value 0.35, Y value 0.6, periodic thickness 10nm, logarithm 60 is right.
7, on the second active layer 27, P-AlInP limiting layer 28 is grown.
8, P-AlInP limiting layer 28 grows GaP Window layer 29.
9, in GaP Window layer 29, make the first electrode 30, make the second electrode 31 at the back side of N-GaAs substrate 21.
Two, product structure analysis:
As shown in Figure 2, the green-yellow light LED adopting above technique to make comprises substrate 21, and substrate 21 is divided into first surface and second surface.On the first surface of substrate 21, be resilient coating 22, Bragg reflecting layer 23, N-type limiting layer 24, undoped superlattice first active layer 25, wide barrier structure layer 26 of adulterating, undoped superlattice second active layer 27, P type limiting layer 28 and GaP Window layer 29 from bottom to top.
First electrode 30 is formed on Window layer 29; Second electrode 31 is formed on the second surface of substrate 21.
Three, photoelectric characteristic evaluation being of a size of the quaternary system luminous diode device structure of 7.0 × 7.0mil lists in table 2.
Table 2
| VF / V | LOP / mcd | WLD / nm | Yield | |
| No.1 | 2.08 | 71.7 | 570.8 | 91.07 |
| No.2 | 2.09 | 69.9 | 570.1 | 90.85 |
| No.3 | 2.08 | 70.7 | 570.6 | 92.28 |
| No.4 | 2.10 | 72.5 | 570.8 | 91.16 |
| Mean value | 2.09 | 71.2 | 570.6 | 91.3 |
As shown in table 2, after the first electrode and the second electrifying electrodes, flow through the result of electric current, launched the yellow-green light that dominant wavelength mean value is 570.6nm, forward voltage mean value when forward flows through 20 milliamperes of (mA) electric currents is 2.09V, normal luminous intensity 71.2mcd, chip yield 91.3%.
Claims (5)
1. the green-yellow light LED of the wide barrier structure of doping, be included in resilient coating, Bragg reflecting layer, the first limiting layer, undoped superlattice first active layer, the second limiting layer, the GaP Window layer of the one side growth of GaAs substrate, GaP Window layer is provided with the first electrode, the another side of GaAs substrate is provided with the second electrode; It is characterized in that: the wide barrier structure layer of grow doping and undoped superlattice second active layer between undoped superlattice first active layer and the second limiting layer.
2. green-yellow light LED according to claim 1, is characterized in that: the wide barrier structure layer of described doping is Al
yga
(1-Y)inP adulterates wide barrier layer, and wherein, 0.5<Y<1, doped chemical is Zn or Mg, and doping content is 1E16-1E17.
3. green-yellow light LED according to claim 2, is characterized in that: the thickness d of the wide barrier structure layer of described doping is 30nm≤d≤300nm.
4. green-yellow light LED according to claim 2, is characterized in that: undoped superlattice first active layer, undoped superlattice second active layer are respectively Al
xga
(1-X)inP/Al
yga
(1-Y)inP active layer, 0.3≤X≤0.35,0.6≤Y≤0.7, periodic thickness is 1 nm ~ 15nm, and cycle logarithm is 2-120 couple.
5. green-yellow light LED according to claim 4, is characterized in that: the main light emission wavelength of undoped superlattice first active layer, undoped superlattice second active layer is 570 ± 10nm.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206886A (en) * | 2016-08-10 | 2016-12-07 | 天津三安光电有限公司 | Light emitting diode |
| CN107768492A (en) * | 2017-11-17 | 2018-03-06 | 扬州乾照光电有限公司 | A kind of yellowish green light-emitting diode and preparation method |
| CN108258094A (en) * | 2018-01-06 | 2018-07-06 | 李丹丹 | Light emitting semiconductor device and preparation method thereof |
| CN112542540A (en) * | 2019-09-20 | 2021-03-23 | 山东华光光电子股份有限公司 | GaAs-based ultra-high brightness LED structure and preparation method thereof |
| CN114447168A (en) * | 2022-01-29 | 2022-05-06 | 厦门三安光电有限公司 | LED epitaxial structure, LED chip and display device |
| CN118198213A (en) * | 2024-05-14 | 2024-06-14 | 聚灿光电科技（宿迁）有限公司 | Epitaxial wafer of red light Micro light-emitting diode and manufacturing method thereof |
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| CN102664224A (en) * | 2012-05-25 | 2012-09-12 | 厦门乾照光电股份有限公司 | AlGaInP system light emitting diode with double-epitaxy structure |
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| CN1759490A (en) * | 2003-02-10 | 2006-04-12 | 昭和电工株式会社 | Light-emitting diode device and production method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206886A (en) * | 2016-08-10 | 2016-12-07 | 天津三安光电有限公司 | Light emitting diode |
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| CN114447168A (en) * | 2022-01-29 | 2022-05-06 | 厦门三安光电有限公司 | LED epitaxial structure, LED chip and display device |
| CN114447168B (en) * | 2022-01-29 | 2024-01-30 | 厦门三安光电有限公司 | LED epitaxial structure, LED chip and display device |
| CN118198213A (en) * | 2024-05-14 | 2024-06-14 | 聚灿光电科技（宿迁）有限公司 | Epitaxial wafer of red light Micro light-emitting diode and manufacturing method thereof |
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