CN105140360A - Nitride light-emitting diode and preparation method therefor - Google Patents
Nitride light-emitting diode and preparation method therefor Download PDFInfo
- Publication number
- CN105140360A CN105140360A CN201510549914.8A CN201510549914A CN105140360A CN 105140360 A CN105140360 A CN 105140360A CN 201510549914 A CN201510549914 A CN 201510549914A CN 105140360 A CN105140360 A CN 105140360A
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- source
- doped
- nitride
- iii
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000011777 magnesium Substances 0.000 claims description 46
- 230000004888 barrier function Effects 0.000 claims description 28
- 229910052749 magnesium Inorganic materials 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 7
- 230000000802 nitrating effect Effects 0.000 claims description 7
- 238000010348 incorporation Methods 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 claims 1
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000000903 blocking effect Effects 0.000 abstract 3
- 230000003139 buffering effect Effects 0.000 abstract 1
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a nitride light-emitting diode and a preparation method therefor. The light-emitting diode comprises a substrate, a low-temperature buffering layer, a non-doped nitride layer, an n-type nitride layer, a multiple-quantum-well region, a high-hole-concentration electron blocking layer, a p-type nitride layer, a p-type contact layer, and an electrode. The high-hole-concentration electron blocking layer improves the merging efficiency of Mg in a second doped layer through alternately injecting an In source and an Mg source in a first doped layer, thereby improving the high hole concentration of the electron blocking layer, reducing the material resistance, reducing the working voltage, and improving the photoelectric conversion efficiency of a device.
Description
Technical field
The present invention relates to semiconductor photoelectric device preparation field, particularly relate to iii-nitride light emitting devices and technology of preparing thereof.
Background technology
The fast development of broad stopband III-V group semi-conductor material makes high brightness LED achieve the commercialization of green glow near ultraviolet product.But the principal element that restriction gallium nitride based light emitting diode moves towards semiconductor lighting is further the problem that under big current, photoelectric conversion efficiency reduces, i.e. Droop problem.Under big current, multiquantum well region Carrier Leakage is one of major reason causing Droop problem, adopts AlGaN layer or AlGaN superlattice electronic barrier layer can effectively suppress Droop effect.But adopt AlGaN layer or AlGaN superlattice electronic barrier layer often to bring the rising of operating voltage, the reason of its outbalance is that in AlGaN layer, hole concentration is low.
Summary of the invention
The object of the invention is to: a kind of iii-nitride light emitting devices is provided, the first doped layer is introduced in electronic barrier layer, first doped layer adopts the method alternately passing into In source and Mg source to promote Mg incorporation efficiency in the second doped layer, thus the hole concentration in lifting electronic barrier layer, reduce the resistance of electronic barrier layer, reduce operating voltage.
Technical scheme of the present invention comprises: a substrate, a low temperature buffer layer, a non-nitrating compound layer, a N-shaped nitride layer, a multiquantum well region, a high hole concentration electronic barrier layer, a p-type nitride layer, a P type contact layer and a p-type electrode.Wherein, high hole concentration electronic barrier layer comprises the first doped layer and the second doped layer, the mode alternately passing into In source and Mg doped source is have employed in the first doped layer, make to grow the Mg atom that front end remains with higher concentration, the incorporation efficiency of Mg in the second doped layer can be increased, increase hole concentration, reduce resistivity.
In the above-mentioned methods, the first doped layer adopts the mode alternately passing into In source and Mg source to realize, and concrete mode is for maintaining NH
3continue to pass into reative cell, and carry out following steps:
(1) pass into Mg source, the duration is t
1;
(2) turn off Mg source, pass into In source, the duration is t
2;
(3) turn off In source, the duration is t
3.
Further, at t
1in time, only pass into Mg source, growth front end can be made to retain a certain amount of Mg atom.
Further, after turning off Mg source, at t
2pass into In source in time, growth front end can be made not have Mg atom or the less regional production InN of Mg atomic ratio.
Further, because the decomposition temperature of InN is lower, easily decompose, turn off In source, and continue t
3time, can make at t
2the InN generated in time decomposes, and leaves more atom N dangling bonds.
Further, in next circulation, at t
1pass into Mg source again in time, can locate further to form Mg atomic layer at atom N dangling bonds.
Further, time t
1, t
2and t
3scope be 1 ~ 3600 second.
In certain embodiments, high hole concentration electronic barrier layer is body material, can comprise 1 the first doped layer and 1 the second doped layer.
In certain embodiments, high hole concentration electronic barrier layer is superlattice structure, then comprise the first doped layer and second doped layer of equal number.
Further, said method can play the doping content of lifting second doped layer, reduces resistivity, reduces the operating voltage of device, especially can reduce the operating voltage of device under big current.
Further, said method can play and promote LED component photoelectric conversion efficiency, especially can reach the object improving device heat radiation under big current.
Accompanying drawing explanation
Fig. 1 is a kind of iii-nitride light emitting devices end view adopting the present invention to prepare.
Fig. 2 is the iii-nitride light emitting devices high hole concentration electronic barrier layer growth course schematic diagram of embodiment 1.
Fig. 3 is the iii-nitride light emitting devices high hole concentration electron barrier layer structure schematic diagram of embodiment 2.
Fig. 4 is the iii-nitride light emitting devices high hole concentration electron barrier layer structure schematic diagram of embodiment 3.
Embodiment
Understanding the practicality of its substantive distinguishing features and institute's tool thereof for making a kind of iii-nitride light emitting devices of the present invention and preparation method thereof be easier to, just by reference to the accompanying drawings the some specific embodiments of the present invention being described in further detail below.But the following description about embodiment and explanation do not constitute any limitation scope.
The invention provides a kind of iii-nitride light emitting devices and preparation method thereof, the light-emitting diode gone out as shown in Figure 1, is followed successively by from bottom to up: substrate 101, low temperature buffer layer 102, non-nitrating compound layer 103, N-shaped nitride layer 104, multiquantum well region 105, high hole concentration electronic barrier layer 106, p-type nitride layer 107, P type contact layer 108 and an electrode 109.
Wherein high hole concentration electronic barrier layer comprises the first doped layer and the second doped layer, the mode alternately passing into In source and Mg doped source is have employed in the first doped layer, make to grow the Mg atom that front end remains with higher concentration, the incorporation efficiency of Mg in the second doped layer can be increased, increase hole concentration, reduce resistivity, reduce the operating voltage of device, especially can improve the photoelectric conversion efficiency of LED under Bulk current injection.
embodiment 1
The high hole concentration electronic barrier layer 106 of the present embodiment only comprises 1 the first doped layer 121 and 1 the second doped layer 122. as shown in Figure 2, and the first doped layer adopts the mode alternately passing into In source and Mg source to realize, and concrete mode is for maintaining NH
3continue to pass into reative cell, and carry out following steps:
(1) pass into Mg source, the duration is t
1;
(2) turn off Mg source, pass into In source, the duration is t
2;
(3) turn off In source, the duration is t
3.
This first doped layer adopts repetition step (1) ~ (3) to realize.At t
1in time, only pass into Mg source, growth front end can be made to retain a certain amount of Mg atom; After turning off Mg source, at t
2pass into In source in time, growth front end can be made not have Mg atom or the less region of Mg atomic ratio to form InN cover layer; Because the decomposition temperature of InN is lower, easily decompose, turn off In source, and continue t
3time, can make at t
2the InN generated in time decomposes, and leaves more atom N dangling bonds; In next circulation, at t
1pass into Mg source again in time, can locate further to form Mg atomic layer at atom N dangling bonds.
Adopt above method can form equally distributed Mg atomic layer in growth front end, in the second doped layer growth course, effectively can increase the incorporation efficiency of Mg atom, increase the hole concentration in the second doped layer, reduce resistivity.
In embodiment 1, the concrete preparation process of high hole electronic barrier layer is:
(1) the first doped layer 121 is grown
The growth temperature of the first doped layer 121 is 900 ~ 1050 DEG C, and chamber pressure is 100 ~ 500mbar, is preferably 200mbar, trimethyl gallium (TMGa), trimethyl indium (TMIn) trimethyl aluminium (TMAl) and ammonia (NH
3) being respectively Ga, In, Al source and N source, carrier gas is N
2.As shown in Figure 2.T
1in time, only pass into Mg source and N source, preferably, t
1time is 20s, Mg source flux is 850sccm; t
2turn off Mg source in time, pass into In source, preferably, t
2time be 30s, In source flux be 140sccm; t
3turn off In source in time, only maintain NH
3pass into reative cell, preferably, t
3time be 40s.Alternatively, as Fig. 2, the first doped layer can be comprise multiple from t
1time is to t
3the circulation of time.
Because the diffusion length of In atom is longer, t
2pass into In source in time, uniform InN atomic layer can be formed at sample surfaces; Then, at t
3turn off In source in time, InN atomic layer can decompose rapidly, leaves a large amount of atom N dangling bonds; Then, at t
1pass into Mg source in time, Mg atom can more successfully find atom N dangling bonds, has larger probability rest on growth front end or be incorporated in epitaxial loayer.After first doped layer has grown, can n(1≤n≤100 be there are in growth front end) individual magnesium atom layer, the present embodiment is preferably 3 ~ 10.
(2) the second doped layer 122 is grown
First doped layer 121 grows the second doped layer 122, its growth conditions is: chamber pressure is 50 ~ 500mbar, be preferably 200mbar, underlayer temperature 900 ~ 1050 DEG C, be preferably 930 DEG C, trimethyl gallium (TMGa), trimethyl indium (TMIn) trimethyl aluminium (TMAl) and ammonia (NH
3) being respectively Ga, In, Al source and N source, carrier gas is N
2.As shown in Figure 2, after first doped layer with multiple circulation has grown, passed into Al source, Ga source and Mg source simultaneously and grown the second doped layer.
In this embodiment, the thickness of the second doped layer is 100nm, and average doping concentration is for being not less than 1.5 × 10
19cm
-3, the average doping concentration on conventional electrical barrier layer is 5 × 10
18cm
-3~ 1 × 10
19cm
-3, be more than 1.5 times of conventional electrical barrier layer.
embodiment 2
As shown in Figure 3, the present embodiment is different from embodiment 1 and is: high hole barrier layer 106, by the first doped layer and the multiple period-producer of the second doped layer alternating growth, namely comprises multiple first doped layer 121 and multiple second doped layer 122.After first doped layer has been grown, when growth the second doped layer, the Mg atom of growth front end can be incorporated into epitaxial loayer gradually, and the Mg atom of growth front end is reduced.In this embodiment, after often growing a period of time second doped layer, regrowth first doped layer, can make again growth front end accumulate more Mg atom, play effect of better adulterating.
embodiment 3
As shown in Figure 4, the present embodiment is different from embodiment 2 and is: the second doped layer 122 is the superlattice structure of GaN/AlGaN, and 122 are made up of GaN layer 123 and AlGaN layer 124.Then high hole barrier layer 106 is made up of multiple first doped layer 121, multiple second doped layer 122.Relative to embodiment 2, the superlattice structure be made up of GaN/AlGaN, is conducive to the operating voltage reducing device further.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. an iii-nitride light emitting devices, comprising:
One substrate;
One low temperature buffer layer, is positioned at substrate;
One non-nitrating compound layer, this non-nitrating compound layer is positioned on low temperature buffer layer;
One N-shaped nitride layer, this N-shaped nitride layer is positioned on non-nitrating compound layer, and this N-shaped nitride layer is manufactured with n-type electrode;
One multiquantum well region, this multiquantum well region is positioned on N-shaped nitride layer;
One high hole concentration electronic barrier layer, this high hole concentration electronic barrier layer is positioned at active layer;
One p-type nitride layer, this p-type nitride layer is positioned on high hole concentration electronic barrier layer;
One P type contact layer, this P type contact layer is positioned on p-type nitride layer, this P type contact layer is formed with p-type electrode;
It is characterized in that: described high hole concentration electronic barrier layer comprises the first doped layer and the second doped layer, adopts the mode alternately passing into In source and Mg doped source in the first doped layer, make the first doped layer, the second doped layer has higher doping content.
2. a kind of iii-nitride light emitting devices according to claim 1, is characterized in that: described high hole concentration electronic barrier layer is In
xal
yga
1-x-ythe body material of N, or comprise In
xal
yga
1-x-ythe superlattice structure (0≤x≤1,0≤y≤1) of N thin layer.
3. a kind of iii-nitride light emitting devices according to claim 2, is characterized in that: described In
xal
yga
1-x-ythe doping content of N body material or superlattice structure is 1 × 10
19cm
-3above, for conventional electrical stops floor height more than 1.5 times.
4. a preparation method for iii-nitride light emitting devices, comprises processing step:
One substrate is provided;
Low temperature growth buffer layer over the substrate;
Described low temperature buffer layer grows non-nitrating compound layer;
Growing n-type nitride layer in described non-nitrating compound layer;
Described N-shaped nitride layer grows multiquantum well region;
Described multiquantum well region grows high hole concentration electronic barrier layer;
Described high hole concentration electronic barrier layer grows p-type nitride layer;
Described p-type nitride layer grows P type contact layer;
Described P type contact layer is formed p-type electrode;
It is characterized in that: described high hole concentration electronic barrier layer first grows the first doped layer, and adopt in the first doped layer and alternately pass into In source and Mg doped source, keep higher Mg atomic concentration in growth front end, make the incorporation efficiency increasing Mg atom when growth the second doped layer.
5. the preparation method of a kind of iii-nitride light emitting devices according to claim 4, is characterized in that: the growth temperature of the first doped layer, the second doped layer is 750 ~ 1050 DEG C.
6. the preparation method of a kind of iii-nitride light emitting devices according to claim 4, is characterized in that: after the first doped layer has grown, and growth front end exists n magnesium atom layer, and wherein the scope of n is 1≤n≤100.
7. the preparation method of a kind of iii-nitride light emitting devices according to claim 4, is characterized in that: the first doped layer adopts and alternately passes into Mg source and In source for improving incorporation efficiency and the doping content of the second doped layer.
8. the preparation method of a kind of iii-nitride light emitting devices according to claim 4, is characterized in that: in the first doped layer growth course, maintains NH
3continue to pass into reative cell, and carry out following steps:
Pass into Mg source, the duration is t
1;
Turn off Mg source, pass into In source, the duration is t
2;
Turn off In source, the duration is t
3.
9. the preparation method of a kind of iii-nitride light emitting devices according to claim 8, is characterized in that: described time t
1, t
2and t
3scope be 1 ~ 3600 second.
10. the preparation method of a kind of iii-nitride light emitting devices according to claim 8, is characterized in that: at described t
3in time period, growth front end can produce a large amount of nitrogen-atoms dangling bonds.
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|---|---|---|---|
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|---|---|---|---|
| CN201510549914.8A CN105140360B (en) | 2015-09-01 | 2015-09-01 | A kind of iii-nitride light emitting devices and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017161694A1 (en) * | 2016-03-23 | 2017-09-28 | 京东方科技集团股份有限公司 | Light emitting device and manufacturing method therefor, and display device |
| CN108807625A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of AlN buffer layer structures and preparation method thereof |
| CN109524521A (en) * | 2018-09-27 | 2019-03-26 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8536615B1 (en) * | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
| CN103337451A (en) * | 2013-07-12 | 2013-10-02 | 湘能华磊光电股份有限公司 | Growth method of electronic barrier layer of epitaxial structure and corresponding epitaxial structure |
| CN103985798A (en) * | 2014-05-16 | 2014-08-13 | 广东德力光电有限公司 | LED of novel quantum well structure and method for manufacturing LED |
| CN104009136A (en) * | 2014-06-16 | 2014-08-27 | 湘能华磊光电股份有限公司 | LED epitaxial layer growth method for improving luminous efficiency and LED epitaxial layer |
-
2015
- 2015-09-01 CN CN201510549914.8A patent/CN105140360B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8536615B1 (en) * | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
| CN103337451A (en) * | 2013-07-12 | 2013-10-02 | 湘能华磊光电股份有限公司 | Growth method of electronic barrier layer of epitaxial structure and corresponding epitaxial structure |
| CN103985798A (en) * | 2014-05-16 | 2014-08-13 | 广东德力光电有限公司 | LED of novel quantum well structure and method for manufacturing LED |
| CN104009136A (en) * | 2014-06-16 | 2014-08-27 | 湘能华磊光电股份有限公司 | LED epitaxial layer growth method for improving luminous efficiency and LED epitaxial layer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017161694A1 (en) * | 2016-03-23 | 2017-09-28 | 京东方科技集团股份有限公司 | Light emitting device and manufacturing method therefor, and display device |
| US10319931B2 (en) | 2016-03-23 | 2019-06-11 | Boe Technology Group Co., Ltd. | Light emitting device, method for manufacturing light emitting device, and display device |
| CN108807625A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of AlN buffer layer structures and preparation method thereof |
| CN109524521A (en) * | 2018-09-27 | 2019-03-26 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
| CN109524521B (en) * | 2018-09-27 | 2020-04-14 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
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