CN109103310A - A kind of epitaxial wafer and growing method promoting gallium nitride based LED light emitting diode antistatic effect - Google Patents
A kind of epitaxial wafer and growing method promoting gallium nitride based LED light emitting diode antistatic effect Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
A kind of epitaxial wafer and growing method promoting gallium nitride based LED light emitting diode antistatic effect, the epitaxial slice structure are followed successively by patterned sapphire AlN substrate from bottom to top, undoped low temperature nitride gallium buffer layer, undoped high-temperature ammonolysis gallium layer, mix SiH4N type gallium nitride conductive layer, active illuminating layer, low temperature mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg, mixes the p-type gallium nitride conductive layer of Mg and mixes the p-type contact layer of Mg.The invention proposes the GaN/AlGaN superlattice structures that quantum barrier layer uses modulation doping, this structure can effectively guide dash current, make pulse current in the two-dimensional electron gas of GaN/AlGaN structure, it conducts in a lateral direction, so that the Density Distribution of pulse current is more uniform, a possibility that keep LED chip breakdown, obtains very big reduction, provides a kind of epitaxial wafer growth method effectively to promote the antistatic effect of gallium nitride based light emitting diode.
Description
Technical field
The invention belongs to GaN-based LED epitaxial wafers to design applied technical field, be related to a kind of promotion gallium nitride based LED hair
The epitaxial wafer and growing method of optical diode antistatic effect.
Background technique
Gallium nitride (GaN) is wide-band gap material, and resistivity is high, what GaN base LED chip generated during production, transport
Electrostatic charge is not easy to disappear, and accumulation can produce very high electrostatic potential to a certain extent.The LED chip of Sapphire Substrate is positive and negative
Electrode is located at chip the same side, spacing very little, therefore to the ability to bear very little of electrostatic, is easily failed by electrostatic breakdown, influences
The service life of device.
Traditional GaN base LED epitaxial growth structure process at present are as follows: 500 DEG C of elder generations grow on a sapphire substrate one layer it is low
Warm GaN buffer layer；It is then followed by one layer of undoped high temperature GaN of growth at 1100 DEG C；It is adulterated followed by one layer of high growth temperature
The n-type GaN layer of SiH4, this layer provide the electronics of recombination luminescence；It is then followed by 750~850 DEG C and grows several periods
The Quantum Well and quantum of GaN/InGaN builds the luminescent layer as LED, this layer is the core of GaN base LED extension；Then exist
The p-type AlGaN layer of 950 DEG C or so growth doping Mg, plays the role of stopping electronics；Finally one layer is grown at 1000 DEG C or so to mix
The p-type GaN layer of miscellaneous Mg, this layer provide the hole of recombination luminescence；It is finally annealing process.
At present in LED epitaxial process, active layer mostly uses several periodic structure GaN/InGaN Quantum Well to build area, electricity
Son and hole recombination luminescence in the relatively narrow well layer InGaN material of energy band.Since the lattice constant difference of two kinds of materials is easy to produce
Raw polarity effect, causes dislocation defects, if this defect cannot be controlled effectively, builds area across GaN/InGaN Quantum Well
Line dislocation will lead to exhibiting high surface defect, form leak channel, and then influences chip and bear antistatic ability.So effectively changing
The crystalline quality of kind active illuminating layer is extremely important to the antistatic effect for promoting LED chip.
Summary of the invention
It is an object of the present invention to for the skill faced in the development process of above-mentioned conventional gallium nitride base LED epitaxial wafer
Art problem builds structure to luminescent layer quantum and design is optimized, barrier layer is designed as to the GaN/AlGaN superlattices of modulation doping
Structure, when LED chip is by electrostatic impact, this structure can effectively guide dash current, make pulse current in GaN/
In the two-dimensional electron gas of AlGaN structure, conduct in a lateral direction, so that the Density Distribution of pulse current is more uniform, thus
A possibility that keeping LED chip breakdown, obtains very big reduction, and then effectively promotes the antistatic effect of LED chip.This hair
The epitaxial wafer and growing method of a kind of promotion gallium nitride based LED light emitting diode antistatic effect of bright proposition, epitaxial layers
Structure it is as shown in Figure 1, comprising: patterned sapphire AlN substrate；Undoped low temperature nitride gallium buffer layer；Undoped height
Warm gallium nitride layer；Mix the n type gallium nitride conductive layer of SiH4；Active illuminating layer is that the InGaN/GaN Quantum Well of periodic structure is built
Area, wherein quantum barrier layer uses the GaN/AlGaN superlattice structure of modulation doping；Low temperature mixes the p-type aluminium gallium nitride alloy electronics resistance of Mg
Barrier；Mix the p-type gallium nitride conductive layer of Mg；Mix the p-type contact layer of Mg.
Technical solution of the present invention:
A kind of epitaxial wafer promoting gallium nitride based LED light emitting diode antistatic effect, the epitaxial slice structure is from bottom to top
Sequence be followed successively by patterned sapphire AlN substrate；Undoped low temperature nitride gallium buffer layer；Undoped high-temperature ammonolysis gallium
Layer；Mix SiH4N type gallium nitride conductive layer；Active illuminating layer is that the InGaN/GaN Quantum Well of periodic structure builds area, wherein measuring
Sub- barrier layer uses the GaN/AlGaN superlattice structure of modulation doping；Low temperature mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg；Mix Mg
P-type gallium nitride conductive layer；Mix the p-type contact layer of Mg；
The active illuminating layer, which is replaced by InGaN Quantum Well with GaN quantum base structure, to be formed, and quantum barrier layer is using modulation
The GaN/AlGaN superlattice structure of doping, this structure can effectively guide dash current, make pulse current in GaN/
In the two-dimensional electron gas of AlGaN structure, conduct in a lateral direction, so that the Density Distribution of pulse current is more uniform, thus
A possibility that keeping LED chip breakdown, obtains very big reduction, can effectively promote the antistatic effect of LED chip.
The undoped low temperature nitride gallium buffer layer with a thickness of 20nm~40nm；
The undoped high-temperature ammonolysis gallium with a thickness of 1500nm~3000nm；
Described mixes SiH4N type gallium nitride conductive layer with a thickness of 2500nm~4000nm；
The active illuminating layer with a thickness of 90nm~400nm；Wherein Quantum Well builds the unit of InGaN Quantum Well in area
With a thickness of 2nm~5nm；It is 9nm~20nm that wherein Quantum Well, which builds the element thickness that GaN quantum is built in area, constitutes the super of quantum base
In lattice structure GaN with a thickness of 1nm~4nm, the AlGaN's of modulation doping with a thickness of 1nm~4nm in superlattice structure；
The low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg with a thickness of 10nm~50nm；
The p-type gallium nitride conductive layer for mixing Mg with a thickness of 20nm~80nm；
The p-type contact layer for mixing Mg with a thickness of 5nm~20nm；
Optimum condition:
The undoped low temperature nitride gallium buffer layer with a thickness of 25nm~30nm；
The undoped high-temperature ammonolysis gallium with a thickness of 1800nm~2500nm；
Described mixes SiH4N type gallium nitride conductive layer with a thickness of 2800nm~3000nm；
The active illuminating layer with a thickness of 200nm~300nm；Wherein Quantum Well builds the list of InGaN Quantum Well in area
Member is with a thickness of 3nm~4nm；It is 12nm~16nm that wherein Quantum Well, which builds the element thickness that GaN quantum is built in area, wherein constituting quantum
In the superlattice structure at base GaN with a thickness of 1.5nm~3nm, in superlattice structure the AlGaN of modulation doping with a thickness of
1.5nm~3nm；
The low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg with a thickness of 15nm~30nm；
The p-type gallium nitride conductive layer for mixing Mg with a thickness of 40nm~60nm；
The p-type contact layer for mixing Mg with a thickness of 10nm~15nm.
A kind of epitaxial wafer growth method promoting gallium nitride based LED light emitting diode antistatic effect, steps are as follows:
Step 1: after patterned sapphire ALN substrate cleaning treatment, it is placed on the graphite plate in MOCVD cavity,
1000~1100 DEG C are toasted 8~12 minutes；
Step 2: cool to 510~560 DEG C, under the pressure of 400~600mbar, growth a layer thickness be 20nm~
The undoped low temperature nitride gallium buffer layer of 30nm；
Step 3: temperature being risen to 1010~1160 DEG C, under the pressure of 600~800mbar, growth a layer thickness is
The undoped high-temperature ammonolysis gallium layer of 1800nm~2500nm；
Step 4: being 1000~1100 DEG C in temperature, under the pressure of 500~700mbar, growth a layer thickness is
2000nm~3000nm's mixes SiH4N type gallium nitride conductive layer；
Step 5: when temperature is 810~860 DEG C, under the pressure of 200~500mbar, growing one layer of 1nm~3nm's
GaN, then the AlGaN of one layer of 1nm~3nm modulation doping of regrowth, alternately continuous with both this for a superlattices cellular construction
2~6 periods are grown, this continuous superlattice structure is that the quantum of active illuminating layer builds plot structure；
Step 6: when temperature is 710~760 DEG C, under the pressure of 200~500mbar, on quantum builds plot structure
The InGaN layer that a layer thickness is 2~6nm is grown, this is the quantum well region structure of active illuminating layer；
Step 7: 9~20 periods are alternately continuously grown in the way of step 5 and 6, this is the complete of active illuminating layer
Whole structure；
Step 8: when temperature is 850~900 DEG C, under the pressure of 150~400mbar, growth a layer thickness is 15nm
The low temperature of~30nm mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg
Step 9: when temperature is 980~1000 DEG C, under the pressure of 150~400mbar, growth a layer thickness is 40nm
The p-type gallium nitride conductive layer for mixing Mg of~60nm
Step 10: when temperature is 750~800 DEG C, under the pressure of 150~400mbar, growth a layer thickness is 10nm
The p-type contact layer for mixing Mg of~15nm；
Step 11: finally annealing 15~25 minutes under nitrogen atmosphere.
The growing technology is metallo-organic compound chemical gaseous phase deposition (MOCVD) growth technology, and metal has
Machine source trimethyl gallium (TMGa) or triethyl-gallium (TEGa) are used as gallium source, and trimethyl indium (TMIn) is used as indium source, trimethyl aluminium
(TMAl) it is used as silicon source, N type dopant is silane (SiH4), and P-type dopant is two luxuriant magnesium (CP2Mg)；Carrier gas is high-purity H2Or/
And high-purity N2。
Beneficial effects of the present invention: more traditional growing method is different, and the present invention builds plot structure to luminescent layer quantum and carries out
Optimization design proposes the GaN/AlGaN superlattice structure that quantum barrier layer uses modulation doping, and this structure can be effective
Dash current is guided, makes pulse current in the two-dimensional electron gas of GaN/AlGaN structure, conducts in a lateral direction, so that arteries and veins
The Density Distribution for rushing electric current is more uniform, so that a possibility that keeping LED chip breakdown obtains very big reduction, effectively to be promoted
The antistatic effect of gallium nitride based light emitting diode provides a kind of epitaxial wafer growth method.
Detailed description of the invention
Fig. 1 is gallium oxide LED epitaxial wafer composed structure schematic diagram.
In figure: 1 patterned sapphire AlN substrate；2 undoped low temperature nitride gallium buffer layers；3 undoped high-temperature ammonolysis
Gallium；4 mix the n type gallium nitride conductive layer of SiH4；5 active illuminating layers are that the InGaN/GaN Quantum Well of periodic structure builds area；
5.1GaN quantum builds area；5.2 quantum well regions InGaN；5.1.1 the GaN of superlattices；5.1.2 the modulation doping of superlattices
AlGaN；6 low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg；7 mix the p-type gallium nitride conductive layer of Mg；8 mix the p-type contact of Mg
Layer.
Specific embodiment
Below in conjunction with technical solution and attached drawing, a specific embodiment of the invention is further illustrated, the present embodiment is using gold
Belong to organic compound chemical vapor deposition device (MOCVD).
Embodiment 1
A kind of epitaxial wafer growth method promoting gallium nitride based LED light emitting diode antistatic effect, including following technique
Step:
Step 1: after patterned sapphire ALN substrate cleaning treatment, it is placed on the graphite plate in MOCVD cavity,
1040 DEG C or so are toasted 11 minutes；
Step 2: cooling to 525 DEG C, under the pressure of 500mbar, grow the low-temperature gan layer that a layer thickness is 27nm；
Step 3: temperature being risen to 1110 DEG C, under the pressure of 750mbar, grows the high temperature that a layer thickness is 2200nm
GaN layer；
Step 4: being 1065 DEG C in temperature, under the pressure of 600mbar, grow the doping SiH4 that a layer thickness is 2700nm
N-shaped high-temperature gan layer；
Step 5: when temperature is 825 DEG C, under the pressure of 300mbar, growing the GaN of one layer of 2nm, then regrowth one
The AlGaN of layer 2nm modulation doping, with both this for a superlattices cellular construction, alternately 5 periods of continuous growth, this is continuous
Superlattice structure is that the quantum of luminescent layer builds plot structure；
Step 6: when temperature is 725 DEG C, under the pressure of 300mbar, growing a layer thickness on quantum barrier layer is
The InGaN layer of 4nm, this is the quantum well region structure of luminescent layer；
Step 7: 14 periods are alternately continuously grown in the way of step 5 and 6, this is the complete structure of luminescent layer；
Step 8: temperature be 860 DEG C when, under the pressure of 200mbar, growth one layer mix Mg with a thickness of 26nm's
AlGaN electronic barrier layer；
Step 9: temperature be 1000 DEG C when, under the pressure of 200mbar, growth one layer mix Mg with a thickness of 58nm's
GaN layer；
Step 10: temperature be 740 DEG C when, under the pressure of 300mbar, growth one layer mix Mg with a thickness of 12nm's
InGaN contact layer；
Step 11: finally annealing 20 minutes under nitrogen atmosphere.
It is analyzed through experiment contrast:
The crystalline quality of epitaxial material produced by the present invention is obviously improved: wherein the contrast test present invention and conventional method institute
The LED chip of system utilizes the anti-of LED chip produced by the present invention after the reversed electrostatic impact of 1000V, 2000V, 4000V
Electrostatic capacity percent of pass is apparently higher than conventional method about 10%, 13%, 16%.Illustrate that the crystalline quality of material improves.Compared to biography
The antistatic effect of system scheme, final LED chip improves 10%-16%.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (5)
1. a kind of epitaxial wafer for promoting gallium nitride based LED light emitting diode antistatic effect, which is characterized in that the epitaxial slice structure
Sequence from bottom to top is followed successively by patterned sapphire AlN substrate；Undoped low temperature nitride gallium buffer layer；Undoped high temperature
Gallium nitride layer；Mix SiH4N type gallium nitride conductive layer；Active illuminating layer is that the InGaN/GaN Quantum Well of periodic structure builds area,
Wherein quantum barrier layer uses the GaN/AlGaN superlattice structure of modulation doping；Low temperature mixes the p-type aluminium gallium nitride alloy electronic blocking of Mg
Layer；Mix the p-type gallium nitride conductive layer of Mg；Mix the p-type contact layer of Mg；
The active illuminating layer, which is replaced by InGaN Quantum Well with GaN quantum base structure, to be formed, and quantum barrier layer uses modulation doping
GaN/AlGaN superlattice structure；
The undoped low temperature nitride gallium buffer layer with a thickness of 20nm~40nm；
The undoped high-temperature ammonolysis gallium with a thickness of 1500nm~3000nm；
Described mixes SiH4N type gallium nitride conductive layer with a thickness of 2500nm~4000nm；
The active illuminating layer with a thickness of 90nm~400nm；Wherein Quantum Well builds the element thickness of InGaN Quantum Well in area
For 2nm~5nm；It is 9nm~20nm that wherein Quantum Well, which builds the element thickness that GaN quantum is built in area, constitutes the superlattices that quantum is built
In structure GaN with a thickness of 1nm~4nm, the AlGaN's of modulation doping with a thickness of 1nm~4nm in superlattice structure；
The low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg with a thickness of 10nm~50nm；
The p-type gallium nitride conductive layer for mixing Mg with a thickness of 20nm~80nm；
The p-type contact layer for mixing Mg with a thickness of 5nm~20nm.
2. the epitaxial wafer according to claim 1 for promoting gallium nitride based LED light emitting diode antistatic effect, feature exist
In,
The undoped low temperature nitride gallium buffer layer with a thickness of 25nm~30nm；
The undoped high-temperature ammonolysis gallium with a thickness of 1800nm~2500nm；
Described mixes SiH4N type gallium nitride conductive layer with a thickness of 2800nm~3000nm；
The active illuminating layer with a thickness of 200nm~300nm；Wherein Quantum Well builds the units thick of InGaN Quantum Well in area
Degree is 3nm~4nm；It is 12nm~16nm that wherein Quantum Well, which builds the element thickness that GaN quantum is built in area, wherein constituting what quantum was built
In superlattice structure GaN with a thickness of 1.5nm~3nm, in superlattice structure the AlGaN of modulation doping with a thickness of 1.5nm~
3nm；
The low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg with a thickness of 15nm~30nm；
The p-type gallium nitride conductive layer for mixing Mg with a thickness of 40nm~60nm；
The p-type contact layer for mixing Mg with a thickness of 10nm~15nm.
3. a kind of epitaxial wafer growth method for promoting gallium nitride based LED light emitting diode antistatic effect, which is characterized in that step
It is as follows:
Step 1: after patterned sapphire ALN substrate cleaning treatment, it is placed on the graphite plate in MOCVD cavity, 1000~
1100 DEG C are toasted 5~10 minutes；
Step 2: cooling to 500~550 DEG C, under the pressure of 400~600mbar, growth a layer thickness is 20nm~40nm's
Undoped low temperature nitride gallium buffer layer；
Step 3: temperature being risen to 1000~1150 DEG C, under the pressure of 600~800mbar, growth a layer thickness is 1500nm
The undoped high-temperature ammonolysis gallium layer of~3000nm；
Step 4: temperature be 1000~1100 DEG C, under the pressure of 500~700mbar, growth a layer thickness for 2500nm~
4000nm's mixes SiH4N type gallium nitride conductive layer；
Step 5: when temperature is 810~860 DEG C, under the pressure of 200~500mbar, the GaN of one layer of 1nm~3nm is grown,
Then the AlGaN of one layer of 1nm~3nm modulation doping of regrowth, with both this for a superlattices cellular construction, alternately continuous growth
2~6 periods, this continuous superlattice structure are that the quantum of active illuminating layer builds plot structure；
Step 6: when temperature is 700~750 DEG C, under the pressure of 200~500mbar, being grown on quantum builds plot structure
A layer thickness is the InGaN layer of 2~5nm, this is the quantum well region structure of active illuminating layer；
Step 7: 9~20 periods are alternately continuously grown in the way of step 5 and 6, this is the complete knot of active illuminating layer
Structure；
Step 8: temperature be 850~900 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 10nm~
The low temperature of 50nm mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg
Step 9: temperature be 980~1000 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 20nm~
The p-type gallium nitride conductive layer for mixing Mg of 80nm
Step 10: temperature be 750~800 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 5nm~
The p-type contact layer for mixing Mg of 20nm；
Step 11: finally annealing 15~25 minutes under nitrogen atmosphere.
4. a kind of epitaxial wafer growth method for promoting gallium nitride based LED light emitting diode antistatic effect, which is characterized in that step
It is as follows:
Step 1: after patterned sapphire ALN substrate cleaning treatment, it is placed on the graphite plate in MOCVD cavity, 1000~
1100 DEG C are toasted 5~10 minutes；
Step 2: cooling to 500~550 DEG C, under the pressure of 400~600mbar, growth a layer thickness is 25nm~30nm's
Undoped low temperature nitride gallium buffer layer；
Step 3: temperature being risen to 1000~1150 DEG C, under the pressure of 600~800mbar, growth a layer thickness is 1800nm
The undoped high-temperature ammonolysis gallium layer of~2500nm；
Step 4: temperature be 1000~1100 DEG C, under the pressure of 500~700mbar, growth a layer thickness for 2800nm~
3000nm's mixes SiH4N type gallium nitride conductive layer；
Step 5: when temperature is 825 DEG C, under the pressure of 300mbar, growing the GaN of one layer of 2nm, then one layer of regrowth
The AlGaN of 2nm modulation doping alternately continuously grows 5 periods with both this for a superlattices cellular construction, this is continuous super
Lattice structure is that the quantum of luminescent layer builds plot structure；
Step 6: when temperature is 700~750 DEG C, under the pressure of 200~500mbar, being grown on quantum builds plot structure
A layer thickness is the InGaN layer of 3~4nm, this is the quantum well region structure of active illuminating layer；
Step 7: 9~20 periods are alternately continuously grown in the way of step 5 and 6, this is the complete knot of active illuminating layer
Structure；
Step 8: temperature be 850~900 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 15nm~
The low temperature of 30nm mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg
Step 9: temperature be 980~1000 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 40nm~
The p-type gallium nitride conductive layer for mixing Mg of 60nm
Step 10: temperature be 750~800 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 10nm~
The p-type contact layer for mixing Mg of 15nm；
Step 11: finally annealing 15~25 minutes under nitrogen atmosphere.
5. a kind of epitaxial wafer for promoting gallium nitride based LED light emitting diode antistatic effect according to claim 3 or 4 is raw
Long method, which is characterized in that the growing method uses metallo-organic compound chemical gaseous phase deposition epitaxial growth method, gold
Belong to organic source trimethyl gallium or triethyl-gallium as gallium source, trimethyl indium is as indium source, and trimethyl aluminium is as silicon source, n-type doping
Agent is silane, and P-type dopant is two luxuriant magnesium；Carrier gas is high-purity H2And/or high-purity N2。
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| CN111816737A (en) * | 2020-09-02 | 2020-10-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Epitaxial structure of GaN-based super-radiation light-emitting diode and application thereof |
| CN113659047A (en) * | 2021-07-22 | 2021-11-16 | 厦门三安光电有限公司 | Epitaxial structure and light emitting diode |
| CN114361302A (en) * | 2022-03-17 | 2022-04-15 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, light-emitting diode buffer layer and preparation method thereof |
| CN115036402A (en) * | 2022-08-12 | 2022-09-09 | 江苏第三代半导体研究院有限公司 | Induced enhanced Micro-LED homoepitaxy structure and preparation method thereof |
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Application publication date: 20181228 |