CN101540591A - Method for producing sapphire surface acoustic wave transducer - Google Patents
Method for producing sapphire surface acoustic wave transducer Download PDFInfo
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- CN101540591A CN101540591A CN200910301705A CN200910301705A CN101540591A CN 101540591 A CN101540591 A CN 101540591A CN 200910301705 A CN200910301705 A CN 200910301705A CN 200910301705 A CN200910301705 A CN 200910301705A CN 101540591 A CN101540591 A CN 101540591A
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- sapphire
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Abstract
The invention discloses a method for producing a sapphire surface acoustic wave transducer, belongs to the technical field of manufacture of surface acoustic wave devices. The method comprises the following steps of: firstly lithographing and developing a graph of the surface acoustic wave transducer on the surface of a sapphire, and then adopting the ion injection method to inject metal aluminum or copper element; then depositing a polycrystalline aluminum nitride piezoelectric thin film on the surface of the sapphire after ion injection; and finally removing a photoresist and obtaining the graph of the surface acoustic wave transducer. The method greatly reduces the surface resistivity of the sapphire by injecting the ions and greatly enhances the electric conductivity, thereby replacing the original deposition of a conductive thin film. The method does not need to deposit an Al or Au thin film and does not need the etching process either. Therefore, the operation is greatly simplified, and the anti-power bearing force of the device is also greatly enhanced.
Description
Technical field
The present invention relates to a kind of manufacturing technology of SAW (Surface Acoustic Wave) device, particularly relate to a kind of manufacture method of sapphire surface acoustic wave transducer.
Background technology
Along with the development of third generation mechanics of communication, the frequency of utilization of surface acoustic wave (SAW) device improves constantly.Surface acoustic wave (SAW) device is determined by two aspect factors usually to high frequency, high performance development: the one, and the interdigital transducer lines of device develop to more miniaturization direction; The 2nd, the SAW velocity of sound of device material develops to higher direction.Though the miniaturization of device lines can directly improve the operating frequency of device, the miniaturization of lines just causes its impedance to increase, and sharply descends thereby directly cause it to bear power capability.For this reason, the unique channel that improve the device operating frequency under existing process conditions, strengthens its power bearing ability is exactly to seek the SAW piezoelectric with higher velocity of sound.
Sapphire is owing to have very high modulus of elasticity, makes it have very the velocity of sound and many other properties of materials that is better than in all material.Therefore, sapphire is that the SAW (Surface Acoustic Wave) device of substrate has received increasing concern, becomes the research focus.Because sapphire itself is not a piezoelectric, can't inspire surface acoustic wave, therefore need deposit the thin-film sound surface wave device that one deck piezoelectric membrane is made multilayer in the above.As shown in Figure 1, the sapphire surface acoustic wave device mainly contains following four kinds of structures according to IDT is different with the relative position of piezoelectric membrane.
Wherein, layer 1 is piezoelectric membranes such as aluminium nitride; Layer 2 is a sapphire thin film; Layer 3 is a silicon substrate; Layer 4 is aluminium or golden interdigital transducer; Layer 5 is short circuit metal levels.In these sandwich constructions, the surface acoustic wave transmission characteristic is that the characteristic by piezoelectric membrane and sapphire thin film substrate determines jointly.
But prior art remains in big problem: at present in these structures of using, each structure all must the depositing electrically conductive film, and is interdigital transducer with conductive photolithographic film.Cause the manufacturing process complexity thus; Simultaneously, the quality of each step processing technology all will directly have influence on the performance of high-frequency sound surface wave SAW device.
Summary of the invention
In order to simplify the manufacturing process of sapphire surface wave transducer, guarantee the crudy of sapphire surface wave transducer, the invention provides a kind of manufacture method of sapphire surface acoustic wave transducer.Described technical scheme is as follows:
The manufacture method of a kind of sapphire surface acoustic wave transducer of the present invention, described method comprises the following steps:
Steps A: utilize photoresist to develop at sapphire thin film or sapphire single-crystal photomask surface, the surface acoustic wave transducer graph area is exposed, but not graph area is covered;
Step B: adopt the ion injection mode to inject conductive element;
Step C: at sapphire thin film or sapphire single-crystal surface deposition polycrystalline aluminium nitride film;
Step D: stripping photoresist obtains the surface acoustic wave transducer figure.
The manufacture method of a kind of sapphire surface acoustic wave transducer of the present invention as adopting sapphire thin film, then at first is fixed on sapphire thin film on silicon or the silicon dioxide substrates in the described steps A.
The manufacture method of a kind of sapphire surface acoustic wave transducer of the present invention, the conductive element among the described step B comprises aluminium or copper.
The manufacture method of a kind of sapphire surface acoustic wave transducer of the present invention adopts the radio frequency sputtering mode to deposit the polycrystalline aluminium nitride film among the described step C.
The manufacture method of a kind of sapphire surface acoustic wave transducer of the present invention, the THICKNESS CONTROL of polycrystalline aluminium nitride film is at 30nm to 300nm among the described step C.
The beneficial effect of technical scheme provided by the invention is:
The manufacture method of sapphire surface acoustic wave transducer of the present invention reduces sapphire surface resistivity by injecting ion greatly, and conductive capability greatly strengthens, thereby substitutes original depositing electrically conductive film.Do not need deposition of aluminum or gold thin film, do not need etching process yet.Therefore make operating process and preparation technology obtain simplifying, also guaranteed the crudy of sapphire surface acoustic wave transducer simultaneously to a certain extent.
Description of drawings
Fig. 1 is four kinds of existing sapphire surface acoustic wave device architecture schematic diagrames;
Fig. 2 is the sapphire surface acoustic wave transducer that utilizes the manufacture method of sapphire surface acoustic wave transducer of the present invention to make;
Fig. 3 is the manufacture method flow chart of the sapphire surface acoustic wave transducer that provides of the embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiment of the present invention is described further in detail below in conjunction with accompanying drawing.
As shown in Figures 2 and 3, the manufacture method of sapphire surface acoustic wave transducer of the present invention mainly comprises the following steps:
Step 101: utilize photoresist at sapphire thin film or sapphire single-crystal photomask surface development SAW (Surface Acoustic Wave) device figure.In this step,, just need sapphire thin film 12 to be fixed on the substrate 11 of silicon or silicon dioxide in advance if select for use sapphire thin film as material.Photoetching process at first is at sapphire thin film 12 or sapphire single-crystal surface-coated photoresist, adopts direct electronic beam writing technology or ultraviolet light photoetching technique to expose then, forms the figure of SAW (Surface Acoustic Wave) device.At this moment, the surface acoustic wave transducer graph area is exposed, but not graph area is covered by photoresist
Step 102: adopt the ion injection mode to inject conductive element 13.Usually the conductive element of selecting for use is aluminium or copper.
Step 103: at the sapphire thin film or the sapphire single-crystal surface deposition polycrystalline aluminium nitride film 14 that inject conductive ion.Adopt the radio frequency sputtering mode to deposit the polycrystalline aluminium nitride film in this step, the thickness of its aluminium nitride film 14 generally is controlled between the 30nm to 300nm.
Step 104: stripping photoresist obtains the figure of surface acoustic wave transducer.Peel off the non-graphics field of photoresist on sapphire thin film or the sapphire single-crystal surface in this step, the transducer figure that can obtain being processed to form.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. the manufacture method of a sapphire surface acoustic wave transducer is characterized in that, described method comprises the following steps:
Steps A: utilize photoresist to develop at sapphire thin film or sapphire single-crystal photomask surface, the surface acoustic wave transducer graph area is exposed, but not graph area is covered;
Step B: adopt the ion injection mode to inject conductive element;
Step C: at sapphire thin film or sapphire single-crystal surface deposition polycrystalline aluminium nitride film;
Step D: stripping photoresist obtains the surface acoustic wave transducer figure.
2. the manufacture method of a kind of sapphire surface acoustic wave transducer according to claim 1 is characterized in that, as adopting sapphire thin film, then at first sapphire thin film is fixed on silicon or the silicon dioxide substrates in the described steps A.
3. the manufacture method of a kind of sapphire surface acoustic wave transducer according to claim 1 is characterized in that, the conductive element that adopts ionic means to inject among the described step B comprises aluminium or copper.
4. the manufacture method of a kind of sapphire surface acoustic wave transducer according to claim 1 is characterized in that, adopts the radio frequency sputtering mode to deposit the polycrystalline aluminium nitride film among the described step C.
5. the manufacture method of a kind of sapphire surface acoustic wave transducer according to claim 1 is characterized in that, the THICKNESS CONTROL of polycrystalline aluminium nitride film is at 30nm to 300nm among the described step C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910301705A CN101540591A (en) | 2009-04-21 | 2009-04-21 | Method for producing sapphire surface acoustic wave transducer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910301705A CN101540591A (en) | 2009-04-21 | 2009-04-21 | Method for producing sapphire surface acoustic wave transducer |
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| CN101540591A true CN101540591A (en) | 2009-09-23 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560398A (en) * | 2012-01-05 | 2012-07-11 | 西安工业大学 | Method for improving piezoelectric substrate performance by using high-rigidity film stress |
| CN106209003A (en) * | 2016-07-06 | 2016-12-07 | 中国科学院上海微系统与信息技术研究所 | Utilize the method that film transferring technique prepares film bulk acoustic wave device |
| WO2018137549A1 (en) * | 2017-01-30 | 2018-08-02 | Huawei Technologies Co., Ltd. | Surface acoustic wave device |
| CN109103310A (en) * | 2018-09-03 | 2018-12-28 | 淮安澳洋顺昌光电技术有限公司 | A kind of epitaxial wafer and growing method promoting gallium nitride based LED light emitting diode antistatic effect |
| WO2019096015A1 (en) * | 2017-11-15 | 2019-05-23 | Huawei Technologies Co., Ltd. | Surface acoustic wave device |
| CN112448689A (en) * | 2019-08-27 | 2021-03-05 | 中电科技德清华莹电子有限公司 | Surface acoustic wave device and manufacturing method thereof |
-
2009
- 2009-04-21 CN CN200910301705A patent/CN101540591A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560398A (en) * | 2012-01-05 | 2012-07-11 | 西安工业大学 | Method for improving piezoelectric substrate performance by using high-rigidity film stress |
| CN102560398B (en) * | 2012-01-05 | 2014-02-12 | 西安工业大学 | Method for improving piezoelectric substrate performance by using high-rigidity film stress |
| CN106209003A (en) * | 2016-07-06 | 2016-12-07 | 中国科学院上海微系统与信息技术研究所 | Utilize the method that film transferring technique prepares film bulk acoustic wave device |
| CN106209003B (en) * | 2016-07-06 | 2019-03-22 | 中国科学院上海微系统与信息技术研究所 | The method for preparing film bulk acoustic wave device using film transferring technique |
| WO2018137549A1 (en) * | 2017-01-30 | 2018-08-02 | Huawei Technologies Co., Ltd. | Surface acoustic wave device |
| US10594292B2 (en) | 2017-01-30 | 2020-03-17 | Huawei Technologies Co., Ltd. | Surface acoustic wave device |
| WO2019096015A1 (en) * | 2017-11-15 | 2019-05-23 | Huawei Technologies Co., Ltd. | Surface acoustic wave device |
| US11316495B2 (en) | 2017-11-15 | 2022-04-26 | Huawei Technologies Co., Ltd. | Surface acoustic wave device |
| CN109103310A (en) * | 2018-09-03 | 2018-12-28 | 淮安澳洋顺昌光电技术有限公司 | A kind of epitaxial wafer and growing method promoting gallium nitride based LED light emitting diode antistatic effect |
| CN112448689A (en) * | 2019-08-27 | 2021-03-05 | 中电科技德清华莹电子有限公司 | Surface acoustic wave device and manufacturing method thereof |
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Open date: 20090923 |